TWI641038B - Polishing liquid supply system - Google Patents
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- TWI641038B TWI641038B TW105124433A TW105124433A TWI641038B TW I641038 B TWI641038 B TW I641038B TW 105124433 A TW105124433 A TW 105124433A TW 105124433 A TW105124433 A TW 105124433A TW I641038 B TWI641038 B TW I641038B
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- storage tank
- valve
- polishing liquid
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- 238000005498 polishing Methods 0.000 title claims abstract description 187
- 239000007788 liquid Substances 0.000 title claims abstract description 168
- 239000007800 oxidant agent Substances 0.000 claims description 31
- 230000001590 oxidative effect Effects 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 230000033116 oxidation-reduction process Effects 0.000 claims description 12
- 238000002835 absorbance Methods 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 43
- 239000000243 solution Substances 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000010979 pH adjustment Methods 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910019093 NaOCl Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
一種拋光液供給系統，包含一儲存槽、一第一管路、一第一閥、一pH感測器與一控制器，其中，該儲存槽用以容置一拋光液，該拋光液之氧化還原電位維持於500 mV以上。該儲存槽透過輸出管路及回流管路連通至一晶片研拋裝置，且該儲存槽透過該第一管路連通一pH調整液供應源。該第一閥設置於該第一管路上。該pH感測器設置於該儲存槽內部，該控制器依據該pH感測器所感測的pH值控制該第一閥，使該儲存槽內拋光液之pH值維持於一預定pH值範圍。藉此，有效控制晶片研拋裝置於研拋晶片時的研拋效率及維持加工品質。A polishing liquid supply system includes a storage tank, a first pipeline, a first valve, a pH sensor, and a controller, wherein the storage tank is used for containing a polishing liquid, and the polishing liquid is oxidized. The reduction potential is maintained above 500 mV. The storage tank is connected to a wafer polishing device through an output line and a return line, and the storage tank is connected to a pH adjusting liquid supply source through the first line. The first valve is disposed on the first pipeline. The pH sensor is disposed inside the storage tank, and the controller controls the first valve according to the pH value sensed by the pH sensor to maintain the pH value of the polishing liquid in the storage tank at a predetermined pH value range. Thereby, the grinding and polishing efficiency of the wafer grinding and polishing device when grinding and polishing the wafer is effectively controlled and the processing quality is maintained.
Description
本發明係與通用於單面拋光或雙面拋光，或通用於游離磨粒與固定磨粒CMP拋光的技術有關；特別是指一種供應拋光液至晶片研拋裝置的拋光液供給系統。The invention relates to a technology commonly used for single-side polishing or double-side polishing, or CMP polishing of free abrasive particles and fixed abrasive particles; and particularly to a polishing liquid supply system for supplying polishing liquid to a wafer polishing device.
半導體元件係製作於晶片上，晶片在進行磊晶之前，為了確保晶片表面的平坦度或是減少晶片的厚度，皆會進行研拋製程。目前常用的研拋方式為化學機械拋光（CMP），晶片在研拋時，必須加入拋光液進行研拋，拋光液中具有磨料、蝕刻液等成分，以加快研拋的速度。以矽晶片而言，化學機械拋光已是相當成熟的技術。Semiconductor components are manufactured on wafers. Before the wafers are epitaxialized, in order to ensure the flatness of the wafer surface or reduce the thickness of the wafers, a polishing process is performed. At present, the common polishing method is chemical mechanical polishing (CMP). When the wafer is polished, polishing liquid must be added for polishing. The polishing liquid has abrasives, etching solutions and other components to accelerate the polishing speed. As far as silicon wafers are concerned, chemical mechanical polishing is a fairly mature technology.
然，對於化學惰性材質之晶片而言，以目前市售的拋光液進行研拋時，其研拋效率不佳。以碳化矽晶片為例，碳化矽晶片可用於高壓元件、高功率元件、太陽能電池等領域，碳化矽晶片在進行研拋時，需耗費相當的時間，導致製程的成本增加，使得以碳化矽晶片製成的元件之成本居高不下。However, for wafers made of chemically inert materials, grinding and polishing efficiency is not good when grinding and polishing are performed with currently available polishing liquids. Taking silicon carbide wafers as an example, silicon carbide wafers can be used in high-voltage components, high-power components, solar cells and other fields. When silicon carbide wafers are polished, it takes a considerable amount of time, resulting in an increase in the cost of the process, making silicon carbide wafers The cost of the manufactured components is high.
有鑑於此，本發明之目的在於提供一種拋光液供給系統，可有效控制晶片研拋效率，並維持研拋的加工品質。In view of this, an object of the present invention is to provide a polishing liquid supply system, which can effectively control the polishing efficiency of a wafer and maintain the processing quality of the polishing.
緣以達成上述目的，本發明提供的一種拋光液供給系統用以供應拋光液至一晶片研拋裝置；該拋光液供給系統包含一儲存槽、一輸出管路、一回流管路、一第一管路、一第一閥、一pH感測器與一控制器，其中，該儲存槽用以容置一拋光液，其中該拋光液之氧化還原電位為500 mV以上；該輸出管路連通該儲存槽內部與該晶片研拋裝置，用以輸送該拋光液至該晶片研拋裝置；該回流管路連通該儲存槽內部與該晶片研拋裝置，用以接收該晶片研拋裝置所回流之拋光液；該第一管路連通該儲存槽內部與一pH調整液供應源，用以輸送該pH調整液供應源之pH調整液；該第一閥設置於該第一管路上，該第一閥係受控制而開通或阻斷該第一管路；該pH感測器設置於該儲存槽內部，用以感測該儲存槽內拋光液之pH值；該控制器電性連接該第一閥與該pH感測器，該控制器依據該pH感測器所感測的pH值控制該第一閥，使該儲存槽內拋光液之pH值維持於一預定pH值範圍。In order to achieve the above object, the present invention provides a polishing liquid supply system for supplying a polishing liquid to a wafer grinding and polishing device; the polishing liquid supply system includes a storage tank, an output pipeline, a return pipeline, and a first A pipeline, a first valve, a pH sensor and a controller, wherein the storage tank is used for containing a polishing liquid, wherein the oxidation-reduction potential of the polishing liquid is above 500 mV; the output pipeline is connected to the The inside of the storage tank is connected with the wafer grinding and polishing device for conveying the polishing liquid to the wafer grinding and polishing device; and the return line communicates with the inside of the storage tank and the wafer grinding and polishing device for receiving the return flow from the wafer grinding and polishing device. Polishing liquid; the first pipeline communicates with the inside of the storage tank and a pH-adjusting liquid supply source for conveying the pH-adjusting liquid of the pH-adjusting liquid supply source; the first valve is arranged on the first pipeline, and the first The valve system is controlled to open or block the first pipeline; the pH sensor is arranged inside the storage tank to sense the pH value of the polishing liquid in the storage tank; the controller is electrically connected to the first Valve and the pH sensor, the controller is based on pH sensor sensed the pH control of the first valve, the pH of the polishing liquid in the storage tank to maintain a predetermined pH range.
本發明另提供一種拋光液供給系統，一儲存槽、一輸出管路、一回流管路、一第一管路、一第一閥、一pH感測器、一第二管路、一第二閥、一氧化還原電位感測器與一控制器，其中，該儲存槽用以容置一拋光液；該輸出管路連通該儲存槽內部與該晶片研拋裝置，用以輸送該拋光液至該晶片研拋裝置；該回流管路連通該儲存槽內部與該晶片研拋裝置，用以接收該晶片研拋裝置所回流之拋光液；該第一管路連通該儲存槽內部與一pH調整液供應源，用以輸送該pH調整液供應源之pH調整液；該第一閥設置於該第一管路上，該第一閥係受控制而開通或阻斷該第一管路；該pH感測器設置於該儲存槽內部，用以感測該儲存槽內拋光液之pH值；該第二管路連通該儲存槽內部與一氧化劑供應源，用以輸送該氧化劑供應源之氧化劑；該第二閥設置於該第二管路上，該第二閥係受控制而開通或阻斷該第二管路；該氧化還原電位感測器設置於該儲存槽內部，用以感測該儲存槽內拋光液之氧化還原電位；該控制器電性連接該第一閥、該第二閥、該pH感測器與該氧化還原電位感測器，該控制器依據該pH感測器所感測的pH值控制該第一閥，使該儲存槽內拋光液之pH值維持於一預定pH值範圍；該控制器依據該氧化還原電位感測器所感測的氧化還原電位控制該第二閥，使該儲存槽內拋光液之氧化還原電位維持於一預定電位以上。The invention also provides a polishing liquid supply system, a storage tank, an output pipeline, a return pipeline, a first pipeline, a first valve, a pH sensor, a second pipeline, a second A valve, a redox potential sensor, and a controller, wherein the storage tank is used for containing a polishing liquid; the output pipeline communicates with the interior of the storage tank and the wafer polishing device to transport the polishing liquid to The wafer grinding and polishing device; the return line communicates with the inside of the storage tank and the wafer grinding and polishing device to receive the polishing liquid returned by the wafer grinding and polishing device; the first pipeline communicates with the inside of the storage tank and a pH adjustment A liquid supply source for conveying the pH adjustment solution of the pH adjustment solution supply source; the first valve is arranged on the first pipeline; the first valve is controlled to open or block the first pipeline; the pH The sensor is arranged inside the storage tank, and is used to sense the pH value of the polishing liquid in the storage tank; the second pipeline communicates with the inside of the storage tank and an oxidant supply source, and is used to transport the oxidant of the oxidant supply source; The second valve is disposed on the second pipeline, and the second valve The second pipeline is opened or blocked under control; the redox potential sensor is arranged inside the storage tank to sense the redox potential of the polishing liquid in the storage tank; the controller is electrically connected to the first A valve, the second valve, the pH sensor and the redox potential sensor, the controller controls the first valve according to the pH value sensed by the pH sensor, so that the polishing liquid in the storage tank The pH value is maintained in a predetermined pH range; the controller controls the second valve according to the redox potential sensed by the redox potential sensor, so that the redox potential of the polishing liquid in the storage tank is maintained above a predetermined potential .
本發明之效果在於，藉由控制拋光液的pH值在預定pH值範圍、以及控制拋光液的氧化還原電位或提供氧化還原電位為500 mV以上拋光液，可以有效控制晶片研拋裝置於研拋晶片時的研拋效率及維持一致的加工品質。The effect of the present invention is that by controlling the pH value of the polishing liquid to a predetermined pH range, and controlling the oxidation-reduction potential of the polishing liquid or providing a polishing liquid with an oxidation-reduction potential above 500 mV, the wafer polishing device can be effectively controlled Polishing efficiency during wafer and maintain consistent processing quality.
為能更清楚地說明本發明，茲舉一較佳實施例並配合圖式詳細說明如後。請參圖１所示，為用於晶片研拋裝置之拋光液的氧化電位、pH值與加工次數的關係圖，本實施例中，該晶片研拋裝置係採用化學機械拋光的方式研拋晶片，所研拋的晶片係以碳化矽晶片為例。為了增進研拋效率，本實施例中拋光液中添加有強氧化劑及酸性化學劑，拋光液（原液）的氧化電位為1148 mV，pH值為2.4，每次加工研拋的過程中，拋光液係循環回收再利用。由圖１中可知，隨著加工的次數增加，拋光液的氧化電位係逐次降低，而pH值逐次升高，前述之現象為拋光液與晶片反應或因研拋產生的熱量所造成。In order to explain the present invention more clearly, a preferred embodiment is described in detail below with reference to the drawings. Please refer to FIG. 1, which is a graph showing the relationship between the oxidation potential, the pH value and the number of processing times of the polishing liquid used in the wafer polishing device. The wafers studied are silicon carbide wafers as an example. In order to improve the polishing efficiency, a strong oxidant and acidic chemical are added to the polishing liquid in this embodiment. The oxidation potential of the polishing liquid (original liquid) is 1148 mV and the pH value is 2.4. During each polishing polishing process, the polishing liquid Recycling. It can be seen from FIG. 1 that as the number of processing times increases, the oxidation potential of the polishing solution decreases successively, and the pH value increases successively. The aforementioned phenomenon is caused by the reaction of the polishing solution with the wafer or the heat generated by polishing.
請配合圖２，為圖１中第一次至第四次加工研拋之晶片表面的照片，由圖中可明顯得知。隨著加工次數的增加，晶片表面上的凹坑（pits）缺陷的數量亦隨之增加。由此可知，拋光液的氧化還原電位與pH值將影響晶片研拋的加工品質。Please refer to FIG. 2 for the photos of the wafer surface for the first to fourth processing polishing in FIG. 1, which can be clearly seen from the figure. As the number of processes increases, the number of pit defects on the wafer surface also increases. It can be known from this that the oxidation-reduction potential and pH value of the polishing solution will affect the processing quality of wafer polishing.
基於上述原理，請配合圖３，本實施例之拋光液供給系統100，係用以穩定供應至晶片研拋裝置200之拋光液S的pH值及氧化還原電位。該拋光液供給系統100包含一儲存槽10、一輸出管路12、一回流管路14、一第一管路16、一第二管路18、一第三管路20與一控制器22。其中：Based on the above principle, please refer to FIG. 3. The polishing liquid supply system 100 of this embodiment is used to stabilize the pH and redox potential of the polishing liquid S supplied to the wafer polishing device 200. The polishing liquid supply system 100 includes a storage tank 10, an output line 12, a return line 14, a first line 16, a second line 18, a third line 20, and a controller 22. among them:
該儲存槽10用以容置拋光液S，其中該拋光液S包含有氧化劑及酸性化學液，該拋光液S的氧化還原電位為500 mV以上，本實施例中氧化劑係採用KMnO4 ，但不以此為限，亦可採用H2 O2 、NaOCl、Fe(NO3 )3 、MnO2 等氧化劑。該儲存槽10中設置有一pH感測器24、一氧化還原電位感測器26與一液位偵測器28，其中，該pH感測器24用以感測該儲存槽10內拋光液S之pH值；該氧化還原電位感測器26用以感測該儲存槽10內拋光液S之氧化還原電位；該液位偵測器28用以偵測該儲存槽10內拋光液S之液位。該儲存槽10中設有一熱交換管30，該熱交換管30連接至一溫控器32，以控制該儲存槽10中拋光液S之溫度維持於預定溫度，避免拋光液S溫度過高。The storage tank 10 is used for containing a polishing liquid S. The polishing liquid S contains an oxidant and an acidic chemical liquid. The redox potential of the polishing liquid S is above 500 mV. In this embodiment, KMnO 4 is used as the oxidant, but With this limitation, oxidants such as H 2 O 2 , NaOCl, Fe (NO 3 ) 3 , and MnO 2 can also be used. The storage tank 10 is provided with a pH sensor 24, a redox potential sensor 26 and a liquid level detector 28. The pH sensor 24 is used to sense the polishing liquid S in the storage tank 10. PH value; the redox potential sensor 26 is used to sense the redox potential of the polishing liquid S in the storage tank 10; the liquid level detector 28 is used to detect the liquid of the polishing liquid S in the storage tank 10 Bit. A heat exchange tube 30 is provided in the storage tank 10, and the heat exchange tube 30 is connected to a temperature controller 32 to control the temperature of the polishing liquid S in the storage tank 10 to a predetermined temperature to avoid the temperature of the polishing liquid S being too high.
該輸出管路12連通該儲存槽10內部與該晶片研拋裝置200，該輸出管路12上設置有一抽取泵122，該抽取泵122用以抽取該儲存槽10中的拋光液S，以輸送至該晶片研拋裝置200。The output line 12 communicates with the inside of the storage tank 10 and the wafer grinding and polishing device 200. The output line 12 is provided with an extraction pump 122 for extracting the polishing liquid S in the storage tank 10 for transportation. To the wafer polishing apparatus 200.
該回流管路14連通該儲存槽10內部與該晶片研拋裝置200，用以接收該晶片研拋裝置200所回流之拋光液。該回流管路14上設置有一過濾件142，該過濾件142過濾回收之拋光液中的雜質，例如拋光液中的結晶。The return line 14 communicates with the inside of the storage tank 10 and the wafer grinding and polishing device 200, and is used for receiving the polishing liquid returned by the wafer grinding and polishing device 200. A filter element 142 is disposed on the return line 14, and the filter element 142 filters impurities in the recovered polishing liquid, such as crystals in the polishing liquid.
該第一管路16連通該儲存槽10內部與一pH調整液供應源34，該第一管路16上設置有一第一閥162，該第一閥162係受控制而開通或阻斷該第一管路16，使該pH調整液供應源34之pH調整液輸送至該儲存槽10中或阻斷pH調整液注入該儲存槽10。The first pipeline 16 communicates with the interior of the storage tank 10 and a pH adjusting liquid supply source 34. The first pipeline 16 is provided with a first valve 162. The first valve 162 is controlled to open or block the first valve 162. A pipeline 16 allows the pH-adjusted liquid of the pH-adjusted liquid supply source 34 to be delivered to the storage tank 10 or blocks the injection of the pH-adjusted liquid into the storage tank 10.
該第二管路18連通該儲存槽10內部與一氧化劑供應源36，該第二管路18上設置有一第二閥182，該第二閥182係受控制而開通或阻斷該第二管路18，使該氧化劑供應源36之氧化劑輸送至該儲存槽10或阻斷氧化劑注入該儲存槽10。該氧化劑供應源36之氧化劑以氧化還原電位高於500mV之氧化劑為佳，本實施例中氧化劑為KMnO4 化學液，且氧化還原電位約為800mV以上。The second pipeline 18 communicates with the inside of the storage tank 10 and an oxidant supply source 36. A second valve 182 is provided on the second pipeline 18, and the second valve 182 is controlled to open or block the second pipeline. Path 18 allows the oxidant from the oxidant supply source 36 to be transported to the storage tank 10 or blocks the oxidant from being injected into the storage tank 10. The oxidant of the oxidant supply source 36 is preferably an oxidant having a redox potential higher than 500 mV. In this embodiment, the oxidant is a KMnO 4 chemical liquid, and the redox potential is about 800 mV or more.
該第三管路20連通該儲存槽10內部與一水源38，該第三管路20上設置有一第三閥202，該第三閥202係受控制而開通或阻斷該第三管路20，使該水源38的水輸送至該儲存槽10或阻斷水注入該儲存槽10。本實施例中，該水源38的水為去離子水。The third pipeline 20 communicates with the water tank 38 inside the storage tank 10. A third valve 202 is provided on the third pipeline 20. The third valve 202 is controlled to open or block the third pipeline 20. The water from the water source 38 is sent to the storage tank 10 or the water is blocked from being injected into the storage tank 10. In this embodiment, the water of the water source 38 is deionized water.
該控制器22電性連接該pH感測器24、該氧化還原電位感測器26、該液位偵測器28、該第一閥162、該第二閥182及該第三閥202。該控制器22依據該pH感測器24所感測的pH值控制該第一閥162開通或阻斷該第一管路16，使該儲存槽10內拋光液S之pH值維持於一預定pH值範圍，本實施例中，該預定pH值範圍的下限為pH 2，上限為pH 5。更詳而言，當該控制器22判斷該pH感測器24所感測的pH值超過該預定pH值範圍的上限時，控制該第一閥162開通該第一管路16，使該pH調整液供應源34之pH調整液注入至該儲存槽10中；當該控制器22判斷該pH感測器24所感測的pH值低於該預定pH值範圍的下限時，控制該第一閥162阻斷該第一管路16。藉此，讓拋光液S的pH值維持在預定pH值範圍內。The controller 22 is electrically connected to the pH sensor 24, the redox potential sensor 26, the liquid level detector 28, the first valve 162, the second valve 182, and the third valve 202. The controller 22 controls the first valve 162 to open or block the first pipeline 16 according to the pH value sensed by the pH sensor 24, so that the pH value of the polishing liquid S in the storage tank 10 is maintained at a predetermined pH. Value range. In this embodiment, the lower limit of the predetermined pH range is pH 2 and the upper limit is pH 5. More specifically, when the controller 22 determines that the pH value sensed by the pH sensor 24 exceeds the upper limit of the predetermined pH value range, controls the first valve 162 to open the first pipeline 16 to adjust the pH. The pH adjusting solution of the liquid supply source 34 is injected into the storage tank 10; when the controller 22 determines that the pH value sensed by the pH sensor 24 is lower than the lower limit of the predetermined pH value range, the first valve 162 is controlled Block the first pipeline 16. Thereby, the pH of the polishing liquid S is maintained within a predetermined pH range.
該控制器22依據該氧化還原電位感測器26所感測的氧化還原電位控制該第二閥182開通或阻斷該第二管路18，使該儲存槽10內拋光液S之氧化還原電位維持於一預定電位以上，本實施例中該預定電位為500mV。更詳而言，當該控制器22判斷該氧化還原電位感測器26所感測的氧化還原電位低於預定電位時，控制該第二閥182開通該第二管路18，使該氧化劑供應源36之氧化劑注入至該儲存槽10中，由於該氧化劑供應源36之氧化劑的氧化還電位高於預定電位，氧化劑注入拋光液S中後，可以使拋光液S的氧化還原電位升高。當該控制器22判斷該氧化還原電位感測器26所感測的氧化還原電位高於該預定電位以上的一上限電位（例如1200 mV）時，控制該第二閥182阻斷該第二管路18。藉此，使拋光液S的氧化還電位維持在預定電位以上。The controller 22 controls the second valve 182 to open or block the second pipeline 18 according to the redox potential sensed by the redox potential sensor 26, so that the redox potential of the polishing solution S in the storage tank 10 is maintained. Above a predetermined potential, the predetermined potential is 500 mV in this embodiment. More specifically, when the controller 22 judges that the redox potential sensed by the redox potential sensor 26 is lower than a predetermined potential, it controls the second valve 182 to open the second pipeline 18 so that the oxidant supply source The oxidant 36 is injected into the storage tank 10. Since the oxidation-reduction potential of the oxidant of the oxidant supply source 36 is higher than a predetermined potential, the oxidation-reduction potential of the polishing solution S can be increased after the oxidant is injected into the polishing solution S. When the controller 22 determines that the redox potential sensed by the redox potential sensor 26 is higher than an upper limit potential (for example, 1200 mV) above the predetermined potential, it controls the second valve 182 to block the second pipeline 18. Thereby, the oxidation reduction potential of the polishing liquid S is maintained at a predetermined potential or more.
該控制器22依據該液位偵測器28所偵測的液位控制該第三閥202開通或阻斷該第三管路20，使該儲存槽10內拋光液S之液位維持於一預定液位以上。更詳而言，當該控制器22判斷該液位偵測器28所偵測的液位低於該預定液位時，控制該第三閥202開通該第三管路20，使該水源38的水注入至該儲存槽10中；當該控制器22判斷該液位偵測器28所偵測的液位在該預定液位以上時，控制該第三閥202阻斷該第三管路20。將水注入拋光液S中的目的，是為了讓維持拋光液S的水份，避免該晶片研拋裝置200於研拋晶片的過程中拋光液S的水分蒸發而影響拋光液S的濃度，造成pH值與氧化電位變異。The controller 22 controls the third valve 202 to open or block the third pipeline 20 according to the liquid level detected by the liquid level detector 28, so that the liquid level of the polishing liquid S in the storage tank 10 is maintained at a level Above the predetermined level. More specifically, when the controller 22 determines that the liquid level detected by the liquid level detector 28 is lower than the predetermined liquid level, it controls the third valve 202 to open the third pipeline 20 so that the water source 38 Water is injected into the storage tank 10; when the controller 22 determines that the liquid level detected by the liquid level detector 28 is above the predetermined liquid level, controls the third valve 202 to block the third pipeline 20. The purpose of injecting water into the polishing liquid S is to maintain the water content of the polishing liquid S, so as to prevent the water in the polishing liquid S from evaporating during the polishing process of the wafer polishing device 200, which will affect the concentration of the polishing liquid S, resulting in Variation in pH and oxidation potential.
藉由上述之結構，即可讓該儲存槽10內之拋光液S維持在允許的pH值範圍及氧化電位範圍內，藉以避免pH值與氧化電位變化而影響研拋晶片的加工效率及加工品質。With the above-mentioned structure, the polishing liquid S in the storage tank 10 can be maintained within the allowable pH range and oxidation potential range, thereby avoiding changes in pH and oxidation potential to affect the processing efficiency and quality of the polishing wafer .
為了更確保拋光液S的品質，本實施例的拋光液供給系統100更包含一光譜儀40，該光譜儀40包括有一光偵測器402、一光源404與一主機406，該光偵測器402設置於該儲存槽10內部，該光源404的光線透過光纖（圖未示）傳輸至該儲存槽10內且照射於該儲存槽10內部的拋光液之液面。該主機406透過該光偵測器402偵測該儲存槽10內拋光液S於特定光波段的吸光率，在所偵測的吸光率達一預定吸光率時，該主機406發出一提示訊號，該提示訊號可傳送至揚聲器（圖未示）或顯示器（圖未示），以聲音或影像的形式提示人員應更換新的拋光液S。舉例而言，拋光液S新使用化學液為一第一顏色（例如紫色），當使用多次後，拋光液S逐漸轉變為第二顏色（例如棕色）時，該主機406判斷該拋光液S於第二顏色的光波段的吸光率增加達到該預定吸光率時，代表拋光液S已不堪使用，該主機406則發出提示訊號。In order to further ensure the quality of the polishing liquid S, the polishing liquid supply system 100 of this embodiment further includes a spectrometer 40. The spectrometer 40 includes a light detector 402, a light source 404, and a host 406. The light detector 402 is provided. Inside the storage tank 10, the light from the light source 404 is transmitted to the storage tank 10 through an optical fiber (not shown) and irradiates the liquid surface of the polishing liquid inside the storage tank 10. The host 406 detects the absorbance of the polishing liquid S in the storage tank 10 at a specific light band through the light detector 402. When the detected absorbance reaches a predetermined absorbance, the host 406 sends a prompt signal, The prompt signal can be transmitted to a speaker (not shown) or a display (not shown), and a sound or an image is used to prompt the personnel to replace the polishing liquid S with a new one. For example, the polishing liquid S newly uses a chemical liquid as a first color (for example, purple). When the polishing liquid S is gradually changed to a second color (for example, brown) after multiple uses, the host 406 judges the polishing liquid S When the absorbance of the light band of the second color increases to reach the predetermined absorbance, it means that the polishing liquid S is unusable, and the host 406 sends a prompt signal.
據上所述，本發明之拋光液供給系統100藉由提供氧化還原電位為500 mV以上拋光液S、控制拋光液S的氧化還原電位以及控制拋光液S的pH值在預定pH值範圍內，可以有效控制晶片研拋裝置於研拋晶片時的研拋效率及維持一致的加工品質。According to the above, the polishing liquid supply system 100 of the present invention provides the polishing liquid S with an oxidation-reduction potential of 500 mV or more, controls the oxidation-reduction potential of the polishing liquid S, and controls the pH of the polishing liquid S to be within a predetermined pH range. It can effectively control the grinding and polishing efficiency of the wafer grinding and polishing device when grinding and polishing wafers and maintain consistent processing quality.
以上所述僅為本發明較佳可行實施例而已，前述晶片研拋裝置只是用於說明本發明之拋光液供給系統，並非用以限制本發明之拋光液供給系統，舉凡應用本發明說明書及申請專利範圍所為之等效變化，理應包含在本發明之專利範圍內。The above description is only a preferred and feasible embodiment of the present invention. The foregoing wafer grinding and polishing device is only used to describe the polishing liquid supply system of the present invention, and is not intended to limit the polishing liquid supply system of the present invention. The equivalent changes in the patent scope should be included in the patent scope of the present invention.
［本發明］[this invention]
100‧‧‧拋光液供給系統100‧‧‧Polishing liquid supply system
10‧‧‧儲存槽10‧‧‧ storage tank
12‧‧‧輸出管路12‧‧‧ output line
122‧‧‧抽取泵122‧‧‧Extraction pump
14‧‧‧回流管路14‧‧‧ return line
142‧‧‧過濾件142‧‧‧Filter
16‧‧‧第一管路16‧‧‧ the first pipeline
162‧‧‧第一閥162‧‧‧First Valve
18‧‧‧第二管路18‧‧‧Second line
182‧‧‧第二閥182‧‧‧Second valve
20‧‧‧第三管路20‧‧‧Third circuit
202‧‧‧第三閥202‧‧‧Third Valve
22‧‧‧控制器22‧‧‧Controller
24‧‧‧pH感測器24‧‧‧pH sensor
26‧‧‧氧化還原電位感測器26‧‧‧Redox potential sensor
28‧‧‧液位偵測器28‧‧‧ level detector
30‧‧‧熱交換管30‧‧‧heat exchange tube
32‧‧‧溫控器32‧‧‧ Thermostat
34‧‧‧pH調整液供應源34‧‧‧ pH adjusting solution supply source
36‧‧‧氧化劑供應源36‧‧‧Oxidant supply source
38‧‧‧水源38‧‧‧ Water source
40‧‧‧光譜儀40‧‧‧ Spectrometer
402‧‧‧光偵測器402‧‧‧light detector
404‧‧‧光源404‧‧‧light source
406‧‧‧主機406‧‧‧Host
200‧‧‧晶片研拋裝置200‧‧‧ Wafer Grinding and Polishing Device
S‧‧‧拋光液S‧‧‧Polishing fluid
圖１為本發明一較佳實施例拋光液的氧化電位、pH值與加工次數的關係圖。 圖２為圖１第一次至第四次加工研拋之晶片表面的照片。 圖３為上述較佳實施例之拋光液供給系統。FIG. 1 is a diagram showing the relationship between the oxidation potential, the pH value, and the number of processing times of a polishing solution according to a preferred embodiment of the present invention. FIG. 2 is a photograph of the wafer surface of the first to fourth processing polishing processes shown in FIG. 1. FIG. 3 shows the polishing liquid supply system of the above preferred embodiment.
Claims (9)
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| TW105124433A TWI641038B (en) | 2016-08-02 | 2016-08-02 | Polishing liquid supply system |
| CN201710532812.4A CN107671732A (en) | 2016-08-02 | 2017-07-03 | Polishing solution supply system |
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| CN108789163A (en) * | 2018-05-30 | 2018-11-13 | 郑州合晶硅材料有限公司 | A kind of silicon chip back side polishing device and polishing method |
| CN109623632B (en) * | 2018-12-24 | 2020-02-07 | 上海华力集成电路制造有限公司 | Chemical mechanical polishing system and working process thereof |
| CN110936021B (en) * | 2019-12-25 | 2023-12-19 | 浙江工业大学 | Scanning type laser composite chemical polishing device and method |
| CN111015500B (en) * | 2019-12-27 | 2021-10-29 | 北京天科合达半导体股份有限公司 | Polishing solution circulating device and method for processing large-size wafer |
| CN111546214B (en) * | 2020-04-23 | 2022-04-22 | 福建晶安光电有限公司 | Dynamic replacement control method and system for slurry in semiconductor wafer processing |
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| TW201625344A (en) * | 2014-12-22 | 2016-07-16 | 普羅設備股份有限公司 | High velocity cross flow dynamic membrane filter |
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| KR20050035865A (en) * | 2002-07-19 | 2005-04-19 | 키네틱 시스템즈, 인코포레이티드 | Method and apparatus for blending process materials |
| CN102935618B (en) * | 2011-08-15 | 2016-05-25 | 中芯国际集成电路制造(上海)有限公司 | Lapping liquid, excessively throwing and end-point detection method and device, polissoir |
| KR20140076566A (en) * | 2011-10-07 | 2014-06-20 | 아사히 가라스 가부시키가이샤 | Single-crystal silicon-carbide substrate and polishing solution |
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| US5647989A (en) * | 1994-10-14 | 1997-07-15 | Kurita Water Industries Ltd. | Method for recovering abrasive particles |
| TW436371B (en) * | 1998-12-24 | 2001-05-28 | Sharp Kk | Polishing liquid supply apparatus |
| TW200732644A (en) * | 2005-10-25 | 2007-09-01 | Rohm & Haas | Dissolution test equipment and methods for testing having improved filtration system |
| TW201529487A (en) * | 2013-06-28 | 2015-08-01 | Panasonic Corp | Hydrogen peroxide-containing effluent treatment apparatus and treatment method |
| TW201542790A (en) * | 2014-03-31 | 2015-11-16 | Noritake Co Ltd | Method for polishing gan single crystal material |
| TW201625344A (en) * | 2014-12-22 | 2016-07-16 | 普羅設備股份有限公司 | High velocity cross flow dynamic membrane filter |
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