CN111015500B - Polishing solution circulating device and method for processing large-size wafer - Google Patents
Polishing solution circulating device and method for processing large-size wafer Download PDFInfo
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- CN111015500B CN111015500B CN201911377667.2A CN201911377667A CN111015500B CN 111015500 B CN111015500 B CN 111015500B CN 201911377667 A CN201911377667 A CN 201911377667A CN 111015500 B CN111015500 B CN 111015500B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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Abstract
The invention discloses a polishing solution circulating device and a method for processing a large-size wafer, wherein a liquid outlet of a polishing solution mixing barrel is connected with a liquid inlet of polishing equipment, and a first liquid return port of the polishing solution mixing barrel is connected with the liquid outlet of the polishing equipment; the detection device is arranged between the liquid outlet of the polishing liquid mixing barrel and the liquid inlet of the polishing equipment and connected with the controller, and is used for detecting the stability parameters of the polishing liquid in the liquid outlet of the polishing liquid mixing barrel and sending the detection result to the controller; the controller is connected with the adjusting and supplying device and is used for controlling the adjusting and supplying device to inject the polishing solution conditioning agent into the polishing solution mixing barrel, so that the stability of the polishing solution is improved. Through the device and the method, the stability parameter of the polishing solution which is recycled is detected, and when the stability parameter of the polishing solution is lower than the preset stability parameter, the polishing solution regulator is injected to enable the stability parameter of the polishing solution to accord with the preset stability parameter, so that the expected polishing effect can be achieved.
Description
Technical Field
The invention relates to the technical field of chemical mechanical polishing, in particular to the technical field of large-size silicon carbide chemical mechanical polishing, and specifically relates to a polishing solution circulating device and method for processing a large-size wafer.
Background
The polishing solution is one of important consumables in the chemical mechanical polishing process, and the stability of the polishing solution is directly related to the stability of the surface quality of the wafer after chemical mechanical polishing, and is a key control factor for improving the processing yield of the wafer. The main components of the chemical mechanical polishing solution are polishing particles, an oxidizing agent, a pH regulator, a surfactant, deionized water and the like. Wherein the oxidizing agent and the pH regulator oxidize the surface of the wafer, and the polishing particles rub on the surface of the wafer to generate a mechanical action to remove the oxide layer. After the chemical mechanical polishing, the residual damaged layer on the surface of the wafer can be effectively removed, and meanwhile, a new damaged layer is not introduced, so that the polishing effect is achieved.
However, in the prior art, since the polishing solution for chemical mechanical polishing is usually recycled, the oxidizing agent and the PH adjusting agent in the polishing solution are continuously consumed along with the progress of the oxidation reaction, so that the chemical polishing stability in the chemical mechanical polishing is reduced, and the expected polishing effect cannot be finally achieved.
Disclosure of Invention
In view of this, the embodiment of the present invention provides a polishing solution circulation device for processing a large-sized wafer, which is configured to detect a stability parameter of a polishing solution of a polishing apparatus, and inject a polishing solution conditioner when the stability parameter of the polishing solution does not meet a preset stability parameter, so as to keep the stability parameter of the polishing solution in the preset stability parameter, thereby ensuring that the polishing apparatus can achieve an expected polishing effect.
In order to achieve the above purpose, the embodiments of the present invention provide the following technical solutions:
the application discloses in a first aspect, a polishing solution circulation device for processing a large-size wafer, comprising: the polishing device comprises a polishing solution mixing barrel, an adjusting and supplying device, a detection device and a controller;
a liquid outlet of the polishing liquid mixing barrel is used for being connected with a liquid inlet of polishing equipment, and a first liquid return port of the polishing liquid mixing barrel is used for being connected with the liquid outlet of the polishing equipment;
the detection device is arranged between the liquid outlet of the polishing liquid mixing barrel and the liquid inlet of the polishing equipment and connected with the controller, and the detection device is used for detecting the stability parameters of the polishing liquid in the liquid outlet of the polishing liquid mixing barrel and sending the detection result to the controller;
the controller is connected with the adjusting and supplying device and used for controlling the adjusting and supplying device to inject polishing solution conditioning agent into the polishing solution mixing barrel, so that the stability of the polishing solution is improved.
Preferably, the stability parameters include: oxidant concentration and/or PH;
the detection device is used for detecting the concentration and/or the PH value of the oxidizing agent of the polishing solution;
the adjusting and supplying device is used for adjusting the concentration and/or the pH value of an oxidant of the polishing solution;
the detection device includes: PH detection equipment and oxidant detection equipment;
the PH detection device is used for detecting whether the PH value of the polishing liquid in the liquid outlet of the polishing liquid mixing barrel is lower than a preset PH value or not and sending a detection result to the controller;
the oxidant detection device is used for detecting whether the concentration of the oxidant in the polishing liquid at the liquid outlet of the polishing liquid mixing barrel is lower than a preset concentration or not and sending a detection result to the controller;
the adjustment supply device comprises: an oxidant supply device and a pH regulator supply device;
when the concentration of the oxidizer in the polishing solution is lower than the preset concentration, the controller controls the oxidizer supplying equipment to supply the oxidizer to the polishing solution;
and when the pH value of the polishing solution is lower than the preset pH value, the controller controls the pH regulator supply equipment to supply the pH regulator for the polishing solution.
Preferably, the oxidant replenishment apparatus comprises: an oxidant storage vessel, a first pump, and a first metering valve;
the controller controls the first pump to deliver the oxidizer in the oxidizer storage container to the polishing liquid mixing barrel through the first metering valve.
Preferably, the PH adjuster supplying apparatus includes: a pH regulator storage container, a second pump and a second metering valve;
the controller controls the second pump to convey the pH regulator in the pH regulator storage container to the polishing solution mixing barrel through the second metering valve.
Preferably, the polishing device further comprises a stock solution replenishing device connected with the polishing solution mixing barrel.
Preferably, the method further comprises the following steps: the three-way valve, the first valve, the second valve and the third valve;
the end A of the three-way valve is used for being connected with a liquid inlet of the polishing equipment, the first valve is arranged on a connecting pipeline of the end A, the end B of the three-way valve is connected with the polishing liquid mixing barrel, the second valve is arranged on a connecting pipeline of the end B, and the end C of the three-way valve is connected with a liquid outlet of the polishing liquid mixing barrel;
the controller is respectively connected with the first valve and the second valve and is used for controlling the first valve to be opened or closed and the second valve to be opened or closed.
Preferably, the method further comprises the following steps: a waste liquid tank and a fourth valve;
and the waste liquid pool is connected with the polishing liquid mixing barrel through the fourth valve and is used for storing the polishing liquid discharged by the polishing liquid mixing barrel.
Preferably, the method further comprises the following steps: a conduit and a third pump;
the third pump is arranged on the pipeline and used for conveying pure water into the polishing solution mixing barrel through the pipeline.
Preferably, the polishing solution circulating device for processing the large-size wafer is particularly suitable for the chemical mechanical polishing of semiconductor wafers, particularly large-size silicon carbide wafers.
The second aspect of the present application discloses a polishing solution circulation method for processing a large-size wafer, wherein in the polishing solution circulation process, a stability parameter of the polishing solution is detected, and when the stability parameter is lower than a preset value, the polishing solution is replenished, so that the polishing solution circulation method is suitable for a polishing solution circulation device for processing a large-size wafer, wherein the polishing solution circulation device for processing a large-size wafer comprises a controller, a detection device and a replenishment device, and comprises:
the controller controls the detection device to detect whether the stability parameter of the polishing solution does not accord with a preset stability parameter;
and if the stability parameter of the polishing solution does not accord with the preset stability parameter, controlling the replenishing device to replenish the polishing solution.
Preferably, the stability parameters include oxidant concentration and/or PH;
the controller controls the detection device to detect whether the concentration of the oxidant in the polishing solution reaches a preset concentration and whether the pH value accords with a preset pH value;
if the concentration of the oxidizer in the polishing solution does not reach the preset concentration, the controller controls the supply device to supply the oxidizer to the polishing solution,
and/or if the pH value of the polishing solution does not accord with the preset pH value, the controller controls the supply device to supply the pH regulator to the polishing solution.
From the above, the invention discloses a polishing solution circulating device and method for processing a large-size wafer, wherein a liquid outlet of a polishing solution mixing barrel is connected with a liquid inlet of polishing equipment, and a first liquid return port of the polishing solution mixing barrel is connected with the liquid outlet of the polishing equipment; the detection device is arranged between the liquid outlet of the polishing liquid mixing barrel and the liquid inlet of the polishing equipment and connected with the controller, and the detection device is used for detecting the stability parameters of the polishing liquid in the liquid outlet of the polishing liquid mixing barrel and sending the detection result to the controller; the controller is connected with the adjusting and supplying device and used for controlling the adjusting and supplying device to inject polishing solution conditioning agent into the polishing solution mixing barrel, so that the stability of the polishing solution is improved. Through the polishing solution circulating device and method for processing the large-size wafer, the stability parameter of the polishing solution which is recycled is detected, and when the stability parameter of the polishing solution is lower than the preset stability parameter, the polishing solution regulator is injected to enable the stability parameter of the polishing solution to accord with the preset stability parameter, so that the expected polishing effect can be achieved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a polishing solution circulation apparatus for processing a large-sized wafer according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another polishing solution circulation apparatus for processing a large-sized wafer according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an oxidant supplying apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a PH regulator supplying device according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart illustrating a method for circulating a polishing solution for processing a large-sized wafer according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of another polishing solution circulation apparatus for processing large-sized wafers according to an embodiment of the present invention;
the polishing solution mixing tank is 10, the adjusting and replenishing device is 20, the detection device is 30, the controller is 40, the three-way valve is 50, the first valve is 60, the second valve is 70, the third valve is 80, the stock solution replenishing device is 90, the waste solution tank is 100, the fourth valve is 110, the pipeline is 120, the third pump is 130, the PH detection device is 31, the oxidant detection device is 32, the oxidant replenishing device is 21, the PH regulator replenishing device is 22, the oxidant storage container is 211, the first pump is 212, the first metering valve is 213, the PH regulator storage container is 221, the second pump is 222, and the second metering valve is 223.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In this application, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
An embodiment of the present invention provides a polishing solution circulation device for processing a large-sized wafer, which is shown in fig. 1 to 4 and is a schematic structural diagram of the polishing solution circulation device for processing the large-sized wafer, and the polishing solution circulation device includes: the polishing solution mixing barrel 10, the adjusting and supplying device 20, the detecting device 30 and the controller 40;
a liquid outlet of the polishing liquid mixing barrel 10 is used for being connected with a liquid inlet of polishing equipment, and a first liquid return port of the polishing liquid mixing barrel 10 is used for being connected with the liquid outlet of the polishing equipment;
the polishing apparatus is a chemical mechanical polishing apparatus for processing a wafer, when the polishing apparatus works, a special polishing solution needs to be introduced, the main components of the polishing solution are polishing particles, an oxidizing agent, a PH adjusting agent, a surfactant, deionized water and the like, wherein the oxidizing agent and the PH adjusting agent oxidize the surface of the wafer, the polishing particles rub on the surface of the wafer to remove the oxide layer, and the surfactant can uniformly disperse the polishing particles in the deionized water.
It should be noted that the liquid outlet of the polishing liquid mixing barrel 10 is connected to the liquid inlet of the polishing apparatus, and the first liquid return port of the polishing liquid mixing barrel 10 is connected to the liquid outlet of the polishing apparatus, so that the polishing liquid entering the polishing apparatus can flow back into the polishing liquid mixing barrel 10, thereby achieving the purpose of recycling the polishing liquid.
The detection device 30 is arranged between the liquid outlet of the polishing liquid mixing barrel 10 and the liquid inlet of the polishing device, and is connected to the controller 40, and the detection device 30 is configured to detect a stability parameter of the polishing liquid in the liquid outlet of the polishing liquid mixing barrel 10, and send a detection result to the controller 40;
it should be noted that the Controller 40 may be a Programmable Logic Controller, a PLC Controller, or a single chip Controller, and in this application, the Controller is preferably a PLC Controller.
It should be noted that the PLC controller is a digital electronic device with a microprocessor, and is a digital logic controller for automatic control, and can load the control instructions into the memory at any time for storage and execution. The programmable controller is modularly assembled by an internal CPU, an instruction and data memory, an input/output unit, a power module, a digital analog unit and the like.
The controller 40 is connected to the adjusting and supplying device 20, and is configured to control the adjusting and supplying device 20 to inject a polishing solution adjusting agent into the polishing solution mixing barrel 10, so as to improve the stability of the polishing solution.
It should be noted that, because the polishing solution contains various components, some components in the polishing solution are consumed during the polishing process of the polishing device, such as the consumption of oxidizing agent, hydrogen ions or hydroxyl ions in the polishing solution, the oxidizing properties of the polishing solution are changed, thereby causing a decrease in chemical polishing stability, and therefore, it is necessary to detect the stability parameters of the polishing solution in real time by the detecting device 30, when the detection device 30 detects that the stable parameter of the polishing solution at the liquid outlet of the polishing solution mixing barrel 10 is too low, it means that the stability parameter of the polishing solution in the polishing solution mixing barrel 10 is too low, and at this time, the control device controls the adjustment and supply device 20 to inject the polishing solution adjusting agent into the polishing solution mixing barrel 10 according to the detection result of the detection device 30, therefore, the polishing solution in the polishing solution mixing barrel 10 meets the preset stability parameters, and the polishing solution conveyed to the polishing equipment is ensured to be in the optimal performance state.
In the embodiment of the application, a liquid outlet of a polishing liquid mixing barrel is connected with a liquid inlet of polishing equipment, and a first liquid return port of the polishing liquid mixing barrel is connected with the liquid outlet of the polishing equipment; the detection device is arranged between the liquid outlet of the polishing liquid mixing barrel and the liquid inlet of the polishing equipment and connected with the controller, and the detection device is used for detecting the stability parameters of the polishing liquid in the liquid outlet of the polishing liquid mixing barrel and sending the detection result to the controller; the controller is connected with the adjusting and supplying device and used for controlling the adjusting and supplying device to inject polishing solution conditioning agent into the polishing solution mixing barrel, so that the stability of the polishing solution is improved. Through the polishing solution circulating device for processing the large-size wafer, the stability parameter of the polishing solution which is recycled is detected, and when the stability parameter of the polishing solution is lower than the preset stability parameter, the polishing solution regulator is injected to enable the stability parameter of the polishing solution to accord with the preset stability parameter, so that the expected polishing effect can be achieved.
Further, the stability parameters include: oxidant concentration and/or PH;
the detection device 30 is used for detecting the concentration and/or the pH value of the oxidizing agent of the polishing solution;
the adjusting and supplying device 20 is used for adjusting the concentration and/or the pH value of the oxidizing agent of the polishing solution;
the detection device 30 includes: a PH detection device 31 and an oxidizing agent detection device 32;
the PH detection device 31 is configured to detect whether a PH value of the polishing liquid in the liquid outlet of the polishing liquid mixing tank 10 is lower than a preset PH value, and send a detection result to the controller 40;
the oxidant detection device 32 is configured to detect whether the concentration of the oxidant in the polishing liquid at the liquid outlet of the polishing liquid mixing barrel 10 is lower than a preset concentration, and send a detection result to the controller 40;
the adjustment supply device 20 includes: an oxidizing agent supply device 21 and a PH adjusting agent supply device 22;
when the concentration of the oxidizer in the polishing solution is lower than the preset concentration, the controller 40 controls the oxidizer supplying device 21 to supply the oxidizer to the polishing solution;
when the PH of the polishing solution is lower than the preset PH, the controller 40 controls the PH adjuster supply device 22 to supply the PH adjuster to the polishing solution.
It should be noted that the PH detection device is mainly used for detecting the PH of the polishing solution, and the PH adjusting agent replenishment device is mainly used for injecting a PH adjusting agent into the polishing solution, so that the PH of the polishing solution is at a stable value.
Further, the oxidant replenishment apparatus 21 includes: an oxidant storage vessel 211, a first pump 212, and a first metering valve 213;
the controller 40 controls the first pump 212 to deliver the oxidizer in the oxidizer storage container 211 to the polishing liquid mixing barrel 10 through the first metering valve 213;
it should be noted that the first pump 212 can deliver the oxidizer into the polishing liquid mixing barrel 10, and the first metering valve 213 meters the amount of the oxidizer delivered into the polishing liquid mixing barrel 10, so as to prevent the phenomenon that the concentration of the oxidizer in the polishing liquid is too high due to delivering too much oxidizer into the polishing liquid mixing barrel 10.
In a specific implementation, the controller 40 controls the first pump 212 to deliver the oxidizer, the first metering valve 213 meters the amount of the oxidizer, when the amount of the oxidizer metered by the first metering valve 213 reaches a preset value, the first metering valve 213 notifies the controller 40, and the controller 40 controls the first pump 212 to stop working, so as to complete the replenishment of the oxidizer.
Further, the PH adjuster supplying apparatus 22 includes: a PH adjuster storage container 221, a second pump 222, and a second metering valve 223;
the controller 40 controls the second pump 222 to deliver the PH adjustor in the PH adjustor storage container 221 to the polishing liquid mixing barrel 10 through the second metering valve 223.
It should be noted that the second pump 222 can deliver the PH adjusting agent to the polishing liquid mixing barrel 10, and the second metering valve 223 meters the amount of the PH adjusting agent delivered to the polishing liquid mixing barrel 10, so as to prevent the PH value of the polishing liquid from being inconsistent with the preset PH value due to delivering excessive PH adjusting agent to the polishing liquid mixing barrel 10.
It should be noted that the adjustment of the ph value in the polishing solution is the same as the adjustment of the oxidizer, and reference may be made to the adjustment of the oxidizer, which is not described herein again.
Further, the polishing solution circulating device for processing the large-size wafer further comprises a stock solution supply device 90 connected with the polishing solution mixing barrel 10.
It should be noted that the stock solution replenishing device can replenish the stock solution in the polishing solution mixing barrel 10, so as to prevent the polishing solution in the polishing solution mixing barrel from being too little.
It should be noted that, when the apparatus is activated, the polishing solution can be directly injected into the polishing solution mixing barrel 10 through the stock solution supply device 90, so that the efficiency of the polishing solution preparation can be improved.
Further, the polishing solution circulating device for processing the large-size wafer further comprises: a three-way valve 50, a first valve 60, a second valve 70, and a third valve 80;
the end a of the three-way valve 50 is used for being connected with a liquid inlet of the polishing equipment, the first valve 60 is arranged on a connecting pipeline of the end a, the end B of the three-way valve 50 is connected with the polishing liquid mixing barrel 10, the second valve 70 is arranged on a connecting pipeline of the end B, and the end C of the three-way valve 50 is connected with a liquid outlet of the polishing liquid mixing barrel 10;
the controller 40 is connected to the first valve 60 and the second valve 70, respectively, and is configured to control the first valve 60 to open or close and the second valve 70 to open or close.
It should be noted that, when the detection device detects that the stability parameter of the polishing solution is lower than the preset stability parameter, the three-way valve 50, the first valve 60, the second valve 70 and the third valve 80 are disposed in the polishing solution circulation device for processing the large-sized wafer, and the polishing solution circulation device can realize another polishing solution circulation loop, that is, the controller 40 controls the first valve 60 to close, the second valve 70 to open, and the third valve 80 to open, so that the polishing solution with the stability parameter lower than that is circularly flowed into the polishing solution mixing barrel 10, and the polishing solution with the stability parameter lower than that is not flowed into the polishing apparatus, only when the detection device detects that the stability parameter of the polishing solution meets the preset stability parameter, the first valve 60 is opened, the second valve 70 is closed, and the polishing solution is delivered to the polishing apparatus.
It should be noted that, when the polishing device and/or the polishing liquid mixing barrel 10 is cleaned, if the polishing device needs to be cleaned, the first valve 60 needs to be opened, the second valve 70 needs to be closed, and the third valve 80 needs to be opened; if only need mix liquid bucket 10 to the polishing solution when wasing, then only need close first valve 60, open second valve 70, the cleaner at this moment can only wash mixed liquid bucket 10 of polishing solution not through polishing equipment to satisfy the different demands of wasing polishing equipment and/mixed liquid bucket 10 of polishing solution.
Further, the polishing solution circulating device for processing the large-size wafer further comprises: a waste reservoir 100 and a fourth valve 110;
the waste liquid tank 100 is connected to the polishing liquid mixing barrel 10 through the fourth valve 110, and is configured to store the polishing liquid discharged from the polishing liquid mixing barrel 10.
It should be noted that, when the polishing apparatus does not need to perform polishing work, the used polishing solution may be discharged into the waste solution tank 100, or when the polishing solution cannot adjust the stability parameter of the polishing solution by adjusting the supply device 20, the polishing solution at this time may be discharged into the waste solution tank 100.
It should be noted that the fourth valve 110 is a switch for controlling the discharge of the polishing liquid, when the fourth valve 110 is opened, the polishing liquid is discharged from the polishing liquid mixing barrel 10, the discharged polishing liquid flows into the waste liquid tank 100, and when the fourth valve 110 is closed, the polishing liquid cannot be discharged from the polishing liquid mixing barrel 10.
Further, the polishing solution circulating device for processing the large-size wafer further comprises: a conduit 120 and a third pump 130;
the third pump 130 is disposed in the pipe 120, and is configured to supply pure water to the polishing liquid mixing barrel 10 through the pipe 120.
It should be noted that, after the polishing apparatus finishes working, the polishing liquid in the polishing liquid mixing barrel 10 is completely discharged, at this time, pure water needs to be injected into the polishing liquid mixing barrel 10 through the pipeline 120 and the third pump 130, the pure water is conveyed to the polishing apparatus through the circulating device for flushing, and the polishing liquid mixing barrel 10 is flushed, so that the influence of crystallization of particles in the polishing liquid in the pipeline on the quality of next polishing is avoided.
Further, the polishing solution circulating device for processing the large-size wafer further comprises: a third metering valve and a fourth pump;
the third metering valve and the fourth pump are arranged at the outlet of the polishing liquid mixing barrel 10, and the third metering valve is used for metering the flow rate of the polishing liquid;
the fourth pump is used for conveying the polishing liquid in the polishing liquid mixing barrel 10 to the polishing equipment.
Further, the polishing solution circulating device for processing the large-size wafer further comprises: a stirrer;
the stirrer is arranged in the polishing solution mixing barrel and is used for stirring the polishing solution in the polishing solution mixing barrel.
It should be noted that, since the polishing solutions contain various substances, deposits may occur during the use of the polishing solutions in the polishing apparatus, and therefore, a stirrer is required to stir in the polishing solution mixing tank to prevent the deposits from occurring in the polishing solution mixing tank 10.
It is worth noting that the polishing solution circulating device for processing the large-size wafer disclosed by the invention is particularly suitable for the chemical mechanical polishing of semiconductor wafers, particularly large-size silicon carbide wafers.
Corresponding to the above-disclosed polishing solution circulation device for processing large-size wafers, the embodiment of the present application further discloses a polishing solution circulation method for processing large-size wafers, as shown in fig. 5, which is a schematic flow diagram of the polishing solution circulation method for processing large-size wafers of the present application, wherein in the polishing solution circulation process, a stability parameter of the polishing solution is detected, and when the stability parameter is lower than a preset value, the polishing solution is replenished, so that the polishing solution circulation device is suitable for processing large-size wafers, and comprises a controller, a detection device and a replenishment device, and comprises the following steps:
step S501: the controller controls the detection device to detect whether the stability parameter of the polishing solution meets a preset stability parameter, if not, the step S502 is executed, and if so, the step S501 is executed.
Step S502: and controlling the replenishing device to replenish the polishing solution.
It should be noted that, through the above-disclosed steps S501 to S502, whether the stability parameter of the polishing solution meets the preset stability parameter is monitored in real time, if the stability parameter of the polishing solution does not meet the preset temperature parameter, the polishing solution needs to be replenished by the replenishing device, so that the stability parameter of the polishing solution meets the preset stability parameter, and if the stability parameter of the polishing solution meets the preset stability parameter, the stability parameter of the polishing solution continues to be detected, thereby ensuring that the stability parameter of the polishing solution is maintained within a certain range.
Based on the above-mentioned method of circulating the slurry for processing a large-sized wafer shown in fig. 5, when the stability parameter includes the oxidizer concentration and/or the PH value;
the controller is required to control the detection device to detect whether the concentration of the oxidant in the polishing solution reaches a preset concentration and whether the pH value reaches a preset pH value;
if the concentration of the oxidizer in the polishing solution does not reach the preset concentration, the controller controls the supply device to supply the oxidizer to the polishing solution,
and/or if the pH value of the polishing solution does not reach the preset pH value, the controller controls the supply device to supply the pH regulator to the polishing solution.
And if the concentration of the oxidant in the polishing solution reaches the preset concentration and the pH value of the polishing solution is the preset pH value, continuously detecting whether the concentration of the oxidant in the polishing solution reaches the preset concentration and whether the pH value is the preset pH value.
Through the polishing solution circulating method for processing the large-size wafer, the concentration of an oxidant and the pH value of the polishing solution are detected in real time, when the concentration of the oxidant of the polishing solution is lower than the preset concentration, the oxidant is added into the polishing solution, so that the concentration of the oxidant of the polishing solution is at the preset concentration, and when the pH value of the polishing solution does not accord with the preset pH value, a pH regulator is added, so that the pH value of the polishing solution accords with the preset pH value.
With reference to the above-disclosed slurry circulation apparatus and method for processing large-sized wafers, and with reference to fig. 1 to 5, as shown in fig. 6, the present invention will be further described with reference to specific embodiments:
the polishing solution circulating device for processing the large-size wafer comprises a stock solution, an oxidizing agent, a PH regulator and pure water supply device, a polishing solution circulating device, an accurate control device for the content of the oxidizing agent and the PH value in the polishing solution, and a cleaning device when the polishing work is not carried out. Wherein, the stock solution, the oxidant, the PH regulator and the pure water supply device are connected with the polishing solution mixing barrel through pipelines, and are stirred and fully mixed in the polishing solution mixing barrel according to a specific proportion; the mixed polishing solution is conveyed to polishing equipment through a pump and a metering valve; the used polishing solution flows out of the pipeline of the polishing device and returns to the polishing solution mixing barrel to be repeatedly recycled.
As an important improvement of the polishing solution circulating apparatus for improving the stability of chemical mechanical polishing according to the present invention, there is included an apparatus for precisely controlling the content of the oxidizing agent and the pH. The control device comprises a detection device for detecting the oxidizing agent and the PH value, a supply device for the oxidizing agent and the PH regulator, a PLC controller, and a pipeline, a pump, a metering valve, a polishing solution barrel and the like which are connected with the PLC controller. The oxidizing agent and PH detecting means may be any of chemical, electrochemical, optical, chromatographic, or mass spectrometric methods. When the detection device detects that the content of the oxidant or the pH value exceeds the detection limit, the PLC outputs a command to a supply device of the oxidant and the pH regulator, a metering valve, a pump 2 and a pump 3 in the supply device are opened, a specified amount of the oxidant and the pH regulator are supplied to a polishing solution mixing barrel until the content of the oxidant or the pH value returns to a specified range, and the PLC informs the metering valve and the pump 1 of being closed.
Another important improvement of the polishing liquid circulating apparatus of the present invention for improving polishing stability comprises a cleaning apparatus when polishing work is not performed. The device comprises a pipeline connected with a mixed polishing solution barrel, a pump, a three-way valve connected with the pump and a valve. When the polishing equipment is not operated and the polishing solution is discharged to the waste solution pool from the waste solution port, the valve 1 connected with the polishing equipment through the three-way valve is closed, the valve 2 connected with the polishing solution mixing barrel is opened, and the polishing solution barrel and the pipeline are circularly cleaned for 2-3 times by pure water; then the valve 2 is closed and the valve 1 is opened, and the polishing equipment and the pipeline connected with the polishing equipment are washed for 2-3 times by pure water.
The invention also provides a method for improving the chemical mechanical polishing stability by using the polishing solution circulating device for improving the polishing stability, which comprises the following steps:
the method comprises the steps of firstly, fully mixing stock solution, an oxidizing agent, a pH regulator and pure water in a polishing solution mixing barrel according to a specific proportion, conveying the mixture to the surface of polishing equipment through a pump and a metering valve, and detecting the content and the pH value of the oxidizing agent in the polishing solution in real time through an oxidizing agent and pH value detection device in the recycling process.
And secondly, when the content or the pH value of the oxidant is detected to be beyond the detection limit, the PLC outputs a command to a supply device of the oxidant and the pH regulator, a metering valve and a pump in the supply device are opened, and a specified amount of the oxidant and the pH regulator are supplied to a mixed polishing solution barrel until the content or the pH value of the oxidant returns to the specified range.
And thirdly, stopping the polishing equipment, draining the polishing solution from the waste liquid port, opening the cleaning device, and respectively cleaning the pipeline connected with the polishing solution mixing barrel and the pipeline connected with the polishing equipment for 2-3 times by using pure water.
The invention can obviously improve the stability of the polishing solution in the chemical mechanical polishing process and lays a good foundation for improving the surface quality of the chemical mechanical polishing wafer and saving the cost.
Example 1:
the polishing solution stock solution, the oxidant and the pH regulator are respectively a silicon dioxide solution with the mass concentration of 30%, a hydrogen peroxide solution with the mass concentration of 30% and a potassium hydroxide solution with the mass concentration of 5:1:1, and are injected into a polishing solution mixing barrel to be uniformly mixed for 30 minutes by stirring. The concentration of hydrogen peroxide in the mixed polishing solution is about 43g/L, and the pH value is about 10.
The metering valve and the pump 4 are opened, the mixed polishing solution is conveyed to the surface of the polishing equipment through a pipeline, and the content and the pH value of the oxidant in the polishing solution are monitored in real time by the oxidant and pH value detection device. The concentration of the hydrogen peroxide is measured by an electrochemical method, the measurement precision is 0.5 percent, and the set value is 38-48 g/L. When the content of the oxidant exceeds a set value, the PLC informs the metering valve and the pump 2 to be opened, hydrogen peroxide is supplemented into the polishing solution mixing barrel until the content of the oxidant returns to a specified range, and the PLC informs the metering valve and the pump 2 to be closed. The PH value is measured by a PH meter, the measurement precision is 0.2, and the set value is 9.6-10.4. When the pH value exceeds the set value, the PLC informs the metering valve and the pump 3 to be opened, the potassium hydroxide solution is supplemented into the polishing solution mixing barrel until the pH value returns to the designated range, and the PLC informs the metering valve and the pump 3 to be closed.
And (4) discharging the polishing solution into a waste solution barrel or a pipeline after polishing. The pump 5 is turned on, and the polishing liquid mixing barrel, the surface of the polishing equipment and the pipeline connected with the polishing liquid mixing barrel are cleaned by pure water. Thereafter, the valve 1 is closed, the valve 2 and the valve 3 are opened, and a certain amount of pure water is injected into the mixed polishing liquid barrel. The polishing pipeline is circularly cleaned by pure water through the C port and the B port of the polishing liquid mixing barrel, the pump 4 and the three-way valve, and the influence on the secondary polishing quality caused by crystallization of particles in the polishing liquid in the polishing pipeline when the polishing is stopped is avoided.
Example 2:
the polishing solution stock solution, the oxidant and the PH regulator are respectively a silicon dioxide solution with the mass concentration of 20%, a potassium permanganate solution with the mass concentration of 5% and a nitric acid solution with the mass concentration of 3%, the silicon dioxide solution, the potassium permanganate solution and the nitric acid solution are injected into a polishing solution mixing barrel according to the proportion of 5:5:1, and the mixture is stirred for 30 minutes and uniformly mixed. The concentration of potassium permanganate in the mixed polishing solution is about 23g/L, and the pH value is about 4.
The metering valve and the pump 4 are opened, the mixed polishing solution is conveyed to the surface of the polishing equipment through a pipeline, and the content and the pH value of the oxidant in the polishing solution are monitored in real time by the oxidant and pH value detection device. The concentration of the potassium permanganate is measured by an electrochemical method, the measurement precision is 0.5 percent, and the set value is between 20 and 26 g/L. When the content of the oxidant exceeds a set value, the PLC informs the metering valve and the pump 2 to be opened, the potassium permanganate solution is supplemented into the polishing solution mixing barrel until the content of the oxidant returns to a specified range, and the PLC informs the metering valve and the pump 2 to be closed. The PH value is measured by a PH meter, the measurement precision is 0.2, and the set value is 3.7-4.3. When the pH value exceeds the set value, the PLC informs the metering valve and the pump 3 to be opened, the nitric acid solution is supplemented into the polishing solution mixing barrel until the pH value returns to the designated range, and the PLC informs the metering valve and the pump 3 to be closed.
And (4) discharging the polishing solution into a waste solution barrel or a pipeline after polishing. The pump 5 is turned on, and the polishing liquid mixing barrel, the surface of the polishing equipment and the pipeline connected with the polishing liquid mixing barrel are cleaned by pure water. Thereafter, the valve 1 is closed, the valves 2 and 3 are opened, and a certain amount of pure water is injected into the mixed polishing liquid tank. The polishing pipeline is circularly cleaned by pure water through the C port and the B port of the polishing liquid mixing barrel, the pump 4 and the three-way valve, and the influence on the secondary polishing quality caused by crystallization of particles in the polishing liquid in the polishing pipeline when the polishing is stopped is avoided.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the apparatus or apparatus embodiments, since they are substantially similar to the method embodiments, they are described relatively simply, and reference may be made to some descriptions of the method embodiments for related points. The above-described apparatuses and apparatus embodiments are merely illustrative, wherein the units described as separate parts may or may not be physically separate, and the parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative components and steps have been described above generally in terms of their functionality in order to clearly illustrate this interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A polishing solution circulating device for processing a large-size wafer is characterized by comprising: the polishing device comprises a polishing solution mixing barrel (10), an adjusting and replenishing device (20), a detection device (30), a controller (40), a three-way valve (50), a first valve (60), a second valve (70), a third valve (80), a pipeline (120), a third pump (130) and a fourth pump;
a liquid outlet of the polishing liquid mixing barrel (10) is connected with a liquid inlet of polishing equipment, and a first liquid return port of the polishing liquid mixing barrel (10) is connected with the liquid outlet of the polishing equipment; the fourth pump is arranged at the outlet of the polishing liquid mixing barrel (10) and is used for conveying the polishing liquid in the polishing liquid mixing barrel (10) to the polishing equipment;
the detection device (30) is arranged between the liquid outlet of the polishing liquid mixing barrel (10) and the liquid inlet of the polishing equipment and connected with the controller (40), and the detection device (30) is used for detecting the stability parameter of the polishing liquid in the liquid outlet of the polishing liquid mixing barrel (10) and sending the detection result to the controller (40);
the controller (40) is connected with the adjusting and supplying device (20) and is used for controlling the adjusting and supplying device (20) to inject a polishing solution adjusting agent into the polishing solution mixing barrel (10) in real time so as to improve the stability of the polishing solution;
the end A of the three-way valve (50) is used for being connected with a liquid inlet of the polishing equipment, the first valve (60) is arranged on a connecting pipeline of the end A, the end B of the three-way valve (50) is connected with the polishing liquid mixing barrel (10), the second valve (70) is arranged on the connecting pipeline of the end B, the end C of the three-way valve (50) is connected with a liquid outlet of the polishing liquid mixing barrel (10), and the third valve (80) is arranged on the connecting pipeline of the end C;
the controller (40) is respectively connected with the first valve (60), the second valve (70) and the third valve (80) and is used for controlling the first valve (60) to be opened or closed, the second valve (70) to be opened or closed and the third valve (80) to be opened or closed; opening the first valve (60) and the third valve (80) when the polishing solution is recycled; when the polishing is stopped, the second valve (70) and the third valve (80) are opened, and the polishing liquid keeps circulating to improve the stability of the polishing liquid;
the third pump (130) is arranged on the pipeline (120) and is used for supplying pure water into the polishing liquid mixing barrel (10) through the pipeline (120);
after polishing, discharging the polishing solution into a waste solution barrel or a pipeline; the controller (40) opens the first valve (60), the third valve (80) and the third pump (130), and the polishing solution mixing barrel (10), the surface of the polishing equipment and the pipeline connected with the polishing solution mixing barrel are cleaned by pure water; and then, the controller (40) closes the first valve (60), opens the second valve (70) and the third valve (80), injects a certain amount of pure water into the mixed polishing solution barrel (10), and circularly cleans the polishing pipeline through the polishing solution mixing barrel (10), the fourth pump and the port C and the port B of the three-way valve (50) to keep the polishing pipeline clean.
2. The apparatus of claim 1, wherein the stability parameters comprise: oxidant concentration and/or PH;
the detection device (30) is used for detecting the concentration and/or the pH value of an oxidant of the polishing solution;
the adjusting and supplying device (20) is used for adjusting the concentration and/or the pH value of an oxidizing agent of the polishing solution;
the detection device (30) comprises: a PH detection device (31) and an oxidizing agent detection device (32);
the regulation replenishment device (20) comprises: an oxidant supply device (21) and a pH regulator supply device (22);
the PH detection device (31) is used for detecting whether the PH value of the polishing liquid in the liquid outlet of the polishing liquid mixing barrel (10) is lower than a preset PH value or not and sending a detection result to the controller (40); when the pH value of the polishing solution is lower than the preset pH value, the controller (40) controls the pH regulator supply device (22) to supply the pH regulator for the polishing solution;
the oxidant detection device (32) is used for detecting whether the concentration of the oxidant in the polishing liquid outlet of the polishing liquid mixing barrel (10) is lower than a preset concentration or not and sending a detection result to the controller (40); when the concentration of the oxidizer in the polishing solution is lower than the preset concentration, the controller (40) controls the oxidizer supplying device (21) to supply the oxidizer to the polishing solution.
3. The apparatus according to claim 2, characterized in that said oxidant replenishment device (21) comprises: an oxidant storage vessel (211), a first pump (212) and a first metering valve (213);
the controller (40) controls the first pump (212) to convey the oxidant in the oxidant storage container (211) to the polishing solution mixing barrel (10) through the first metering valve (213), so that the function of keeping the content of the oxidant in the polishing solution stable in real time is realized.
4. The apparatus according to claim 2, wherein said PH adjuster supply means (22) comprises: a pH adjuster storage container (221), a second pump (222), and a second metering valve (223);
the controller (40) controls the second pump (222) to convey the pH regulator in the pH regulator storage container (221) to the polishing solution mixing barrel (10) through the second metering valve (223), so that the function of keeping the pH value in the polishing solution stable in real time is realized.
5. The apparatus of claim 1, further comprising: a waste liquid pool (100), a fourth valve (110), a stirrer, a third metering valve and a stock solution supply device (90) connected with the polishing solution mixing barrel (10);
the waste liquid pool (100) is connected with the polishing liquid mixing barrel (10) through the fourth valve (110) and is used for storing the polishing liquid discharged by the polishing liquid mixing barrel (10); the fourth valve (110) is used for discharging waste liquid;
the stirrer is arranged in the polishing solution mixing barrel and is used for stirring the polishing solution in the polishing solution mixing barrel;
the third metering valve is arranged at the outlet of the polishing liquid mixing barrel (10) and is used for metering the flow rate of the polishing liquid.
6. The apparatus of claim 1, particularly adapted for use with semiconductor wafers.
7. The apparatus of claim 1, particularly adapted for chemical mechanical polishing of large size silicon carbide wafers.
8. A method for circulating a polishing solution for processing a large-sized wafer, wherein the polishing solution circulating apparatus for processing a large-sized wafer according to any one of claims 1 to 7 is used, and a stability parameter of the polishing solution is detected during the circulation of the polishing solution, and the polishing solution is replenished when the stability parameter is lower than a preset value, the polishing solution circulating apparatus being adapted to the polishing solution circulating apparatus, the polishing solution circulating apparatus comprising a controller, a detecting means and a replenishing means, the method comprising:
the controller controls the detection device to detect whether the stability parameter of the polishing solution does not accord with a preset stability parameter;
if the stability parameter of the polishing solution does not accord with the preset stability parameter, controlling the replenishing device to replenish the polishing solution;
after polishing, discharging the polishing solution into a waste solution barrel or a pipeline;
opening a first valve (60), a third valve (80) and a third pump (130), and cleaning the polishing solution mixing barrel (10), the surface of polishing equipment and a pipeline connected with the polishing solution mixing barrel by using pure water;
and then, closing the first valve (60), opening the second valve (70) and the third valve (80), and injecting a certain amount of pure water into the mixed polishing solution barrel (10), wherein the pure water circularly cleans the polishing pipeline through the polishing solution mixing barrel (10), the fourth pump and the port C and the port B of the three-way valve (50) to keep the polishing pipeline clean.
9. The method of claim 8, wherein the stability parameters include an oxidant concentration and/or a PH;
the controller controls the detection device to detect whether the concentration of the oxidant in the polishing solution reaches a preset concentration and whether the pH value accords with a preset pH value;
if the concentration of the oxidizer in the polishing solution does not reach the preset concentration, the controller controls the supply device to supply the oxidizer to the polishing solution,
and/or if the pH value of the polishing solution does not accord with the preset pH value, the controller controls the supply device to supply the pH regulator to the polishing solution.
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| CN111390747B (en) * | 2020-04-23 | 2022-07-19 | 福建晶安光电有限公司 | Quantitative slurry pumping and replacing device in semiconductor wafer processing |
| CN111546214B (en) * | 2020-04-23 | 2022-04-22 | 福建晶安光电有限公司 | Dynamic replacement control method and system for slurry in semiconductor wafer processing |
| CN114211399A (en) * | 2020-09-18 | 2022-03-22 | 上海菲利华石创科技有限公司 | Automatic polishing solution supply device for quartz ring for semiconductor |
| CN114737188A (en) * | 2022-03-01 | 2022-07-12 | 李洋 | Polishing production system |
| CN114952612B (en) * | 2022-05-20 | 2023-05-30 | 深圳市普盛旺科技有限公司 | Polishing grinding fluid filtering equipment and polishing grinding fluid circulating and filtering system |
| CN116301087A (en) * | 2023-02-13 | 2023-06-23 | 中环领先半导体材料有限公司 | Novel automatic pH value adjusting device for polishing solution |
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| US6220934B1 (en) * | 1998-07-23 | 2001-04-24 | Micron Technology, Inc. | Method for controlling pH during planarization and cleaning of microelectronic substrates |
| EP1610365B1 (en) * | 2003-03-18 | 2012-08-08 | Nomura Micro Science Co., Ltd. | Material for purification of semiconductor polishing slurry, module for purification of semiconductor polishing slurry and process for producing semiconductor polishing slurry |
| CN102001044B (en) * | 2009-09-01 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | System for supplying grinding fluid by chemically mechanical polishing (CMP) |
| CN103264352A (en) * | 2013-04-26 | 2013-08-28 | 中国科学院上海光学精密机械研究所 | Polishing liquid circulating filtration and injection device for large-sized ring polishing machine |
| CN104029130B (en) * | 2014-06-06 | 2016-06-15 | 中国科学院长春光学精密机械与物理研究所 | A kind of intelligence polishing fluid supply circulating device |
| TWI641038B (en) * | 2016-08-02 | 2018-11-11 | 兆遠科技股份有限公司 | Polishing liquid supply system |
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Application publication date: 20200417 Assignee: Shenzhen Reinvested Tianke Semiconductor Co.,Ltd. Assignor: TANKEBLUE SEMICONDUCTOR Co.,Ltd.|BEIJING TIANKE HEDA NEW MATERIAL CO.,LTD.|Jiangsu tiankeheda Semiconductor Co.,Ltd. Contract record no.: X2023990000784 Denomination of invention: A polishing fluid circulation device and method for processing large-sized wafers Granted publication date: 20211029 License type: Common License Record date: 20230831 |