TWI637512B - Field-effect transistor, display element, image display, system, and composition - Google Patents

Abstract

一種場效電晶體包括一閘極，用於施加閘極電壓；一源極和一汲極，用於輸出電流；一半導體層，設置為靠近該源極和該汲極；以及一閘極絕緣層，設置在該閘極與該半導體層之間，其中該閘極絕緣層包括含有矽和一種或兩種或更多種鹼土金屬元素的一氧化物。 A field effect transistor includes a gate for applying a gate voltage, a source and a drain for outputting current, a semiconductor layer disposed adjacent to the source and the drain, and a gate insulating a layer disposed between the gate and the semiconductor layer, wherein the gate insulating layer comprises a monooxide containing germanium and one or two or more alkaline earth metal elements.

Description

場效電晶體、顯示元件、影像顯示器、系統及組合物 Field effect transistors, display elements, image displays, systems and compositions

本發明涉及一種場效電晶體、一種顯示元件、一種影像顯示器、一種系統、以及一種組合物。 The present invention relates to a field effect transistor, a display element, an image display, a system, and a composition.

場效電晶體(FET)根據施加電場於閘極進而提供由於通道的電場而產生抵抗電子流或電洞流的閘門的原理，藉此來控制源極與汲極之間的電流。 A field effect transistor (FET) controls the current between the source and the drain by applying an electric field to the gate to provide a gate that resists the flow of electrons or holes due to the electric field of the channel.

由於該特性，FET用作開關元件和放大元件等。此外，由於FET具有平面結構並且閘極電流低，所以與雙極性電晶體相比，FET的製造和整合容易。因此，FET是用於當前電子設備的積體電路中之不可或缺的元件。例如，FET作為薄膜電晶體(TFTs)被應用於採用主動矩陣形式的顯示器。 Due to this characteristic, the FET is used as a switching element, an amplifying element, and the like. In addition, since the FET has a planar structure and the gate current is low, the fabrication and integration of the FET is easier than that of the bipolar transistor. Therefore, the FET is an indispensable component in the integrated circuit of the current electronic device. For example, FETs are used as thin film transistors (TFTs) for displays in the form of active matrix.

同樣，作為平板顯示器(FPDs)、液晶顯示器、有機電激發光顯示器以及電子紙已投入實際使用。 Similarly, flat panel displays (FPDs), liquid crystal displays, organic electroluminescent displays, and electronic papers have been put into practical use.

這些FPD由包括在主動層中使用非晶矽和多晶矽等的TFT的驅動電路所驅動。同樣，對於FPDs需要進一步增加尺寸、更精細的解析度、更高的影像品質以及更高的驅動反應。因此，要求TFTs具有優異的載子遷移率、高的開/關比、較小的時間變化特性以及元件之間的小的變化。 These FPDs are driven by a driving circuit including TFTs using amorphous germanium, polycrystalline germanium or the like in the active layer. Also, FPDs require further size, finer resolution, higher image quality, and higher drive response. Therefore, TFTs are required to have excellent carrier mobility, high on/off ratio, small time variation characteristics, and small variations between elements.

然而，非晶矽和多晶矽都具有優點和缺點使得其難以滿足全部需求。為了滿足需求，已經積極地開發在主動層中使用氧化物半導體的TFTs，預期具有比非晶矽更好的遷移率。 However, both amorphous and polycrystalline germanium have advantages and disadvantages that make it difficult to meet all of the requirements. In order to meet the demand, TFTs using an oxide semiconductor in an active layer have been actively developed, and it is expected to have better mobility than amorphous germanium.

根據本發明，提供一種改善的場效電晶體，包括一閘極，用以施加一閘極電壓；一源極和一汲極，用以輸出電流；一半導體層，設置為靠近該源極和該汲極；以及一閘極絕緣層，設置在該汲極與該半導體層之間。該閘極絕緣層包括具有矽和一種或兩種或更多種鹼土金屬元素的一氧化物。 According to the present invention, there is provided an improved field effect transistor comprising a gate for applying a gate voltage, a source and a drain for outputting a current, and a semiconductor layer disposed adjacent to the source and The drain electrode and a gate insulating layer are disposed between the drain and the semiconductor layer. The gate insulating layer includes a monooxide having tantalum and one or two or more alkaline earth metal elements.

11、12、14‧‧‧場效電晶體 11, 12, 14‧‧‧ field effect transistor

13、15‧‧‧電容器 13, 15‧‧‧ capacitors

16‧‧‧對電極 16‧‧‧ opposite electrode

21‧‧‧基板 21‧‧‧Substrate

22‧‧‧閘極 22‧‧‧ gate

23‧‧‧閘極絕緣層 23‧‧‧ gate insulation

24‧‧‧源極 24‧‧‧ source

25‧‧‧汲極 25‧‧‧汲polar

26‧‧‧氧化物半導體層 26‧‧‧Oxide semiconductor layer

31‧‧‧基板 31‧‧‧Substrate

32‧‧‧第一閘極 32‧‧‧First Gate

33‧‧‧第二閘極 33‧‧‧second gate

34‧‧‧閘極絕緣層 34‧‧‧ gate insulation

35‧‧‧第一源極 35‧‧‧first source

36‧‧‧第二源極 36‧‧‧Second source

37‧‧‧第一汲極 37‧‧‧First bungee

38‧‧‧第二汲極 38‧‧‧Second bungee

39‧‧‧第一氧化物半導體層 39‧‧‧First oxide semiconductor layer

40‧‧‧第二氧化物半導體層 40‧‧‧Second oxide semiconductor layer

41‧‧‧第一鈍化層 41‧‧‧First passivation layer

42‧‧‧第二鈍化層 42‧‧‧Second passivation layer

43‧‧‧層間絕緣層 43‧‧‧Interlayer insulation

44‧‧‧有機EL層 44‧‧‧Organic EL layer

45‧‧‧陰極 45‧‧‧ cathode

91‧‧‧基板 91‧‧‧Substrate

92‧‧‧閘極 92‧‧‧ gate

93‧‧‧閘極絕緣層 93‧‧‧gate insulation

94‧‧‧源極 94‧‧‧ source

95‧‧‧汲極 95‧‧‧汲polar

96‧‧‧氧化物半導體層 96‧‧‧Oxide semiconductor layer

101‧‧‧基板 101‧‧‧Substrate

102‧‧‧底部電極 102‧‧‧ bottom electrode

103‧‧‧絕緣薄膜 103‧‧‧Insulation film

104‧‧‧上部電極 104‧‧‧Upper electrode

302‧‧‧顯示元件 302‧‧‧Display components

302'‧‧‧顯示元件 302'‧‧‧Display components

310‧‧‧顯示器 310‧‧‧ display

312‧‧‧陰極 312‧‧‧ cathode

314‧‧‧陽極 314‧‧‧Anode

320‧‧‧驅動電路 320‧‧‧ drive circuit

320'‧‧‧驅動電路 320'‧‧‧ drive circuit

340‧‧‧有機EL薄膜層 340‧‧‧Organic EL film layer

342‧‧‧電子傳輸層 342‧‧‧Electronic transport layer

344‧‧‧發光層 344‧‧‧Lighting layer

346‧‧‧電洞傳輸層 346‧‧‧ hole transport layer

350‧‧‧有機電激發光(EL)元件 350‧‧‧Organic Electroluminescent (EL) Components

370‧‧‧液晶元件 370‧‧‧Liquid Crystal Components

372‧‧‧對電極 372‧‧‧ opposite electrode

400‧‧‧顯示控制裝置 400‧‧‧Display control device

402‧‧‧影像資料處理電路 402‧‧‧Image data processing circuit

404‧‧‧掃描線驅動電路 404‧‧‧Scan line driver circuit

406‧‧‧資料線驅動電路 406‧‧‧Data line driver circuit

G‧‧‧閘極 G‧‧‧ gate

S‧‧‧源極 S‧‧‧ source

D‧‧‧汲極 D‧‧‧汲

X0，X1，X2，X3，...，Xn-2，Xn-1‧‧‧掃描線 X0, X1, X2, X3, ..., Xn-2, Xn-1‧‧‧ scan lines

Y0，Y1，Y2，Y3，...，Ym-2，Ym-1‧‧‧資料線 Y0, Y1, Y2, Y3, ..., Ym-2, Ym-1‧‧‧ data line

Y0i，Y1i，Y2i，Y3i，...，Ym-1i‧‧‧電流供給線 Y0i, Y1i, Y2i, Y3i, ..., Ym-1i‧‧‧ current supply line

當結合圖式考慮時，由於透過詳細描述使本發明更容易被理解，因此本發明的各種其它目的、特徵和伴隨的優點將被更充分地理解，圖式中，相同的圖式符號始終表示相同的對應部件，並且其中：圖1是顯示影像顯示裝置的示意圖；圖2是根據本發明實施例示出顯示元件的示例的示意圖；圖3A是根據本發明實施例顯示場效電晶體的示例(下接觸下閘極型)的示意圖；圖3B是根據本發明實施例顯示場效電晶體的示例(上接觸下閘極型)的示意圖；圖3C是根據本發明實施例顯示場效電晶體的示例(下接觸上閘極型)的示意圖；圖3D是根據本發明實施例顯示場效電晶體的示例(上接觸上閘極型)的示意圖；圖4是顯示有機電激發光(EL)元件的示例的示意圖；圖5是根據本發明實施例示出顯示元件的示例的示意圖；圖6是根據本發明實施例示出顯示元件的另一示例的示意圖；圖7是示出顯示控制裝置的描述的示意圖；圖8是顯示液晶顯示器的描述的示意圖；圖9是顯示圖8中所示之顯示元件的描述的示意圖；圖10是顯示在稍後敘述的示例1~3和比較示例1和2中所製造的場效電晶體的示意圖；圖11是顯示在示例1~3和比較示例1和2中所製造的電容器的示意 圖；圖12是評估在稍後敘述的示例13中所製造的電容器其相對介電常數ε和介電損耗(tanδ)與施加電場的頻率之間的關係的示意圖；圖13是評估在比較示例1中所製造的電容器其相對介電常數ε和介電損耗(tanδ)與施加電場的頻率之間的關係的示意圖；以及圖14是評估在示例13中所製造的場效電晶體其電晶體特性(Vds-Ids)的示意圖。 The various other objects, features and attendant advantages of the present invention will become more <RTIgt; The same corresponding components, and wherein: FIG. 1 is a schematic view showing an image display device; FIG. 2 is a schematic view showing an example of a display element according to an embodiment of the present invention; and FIG. 3A is an example showing a field effect transistor according to an embodiment of the present invention ( FIG. 3B is a schematic diagram showing an example of a field effect transistor (upper contact lower gate type) according to an embodiment of the present invention; FIG. 3C is a view showing a field effect transistor according to an embodiment of the present invention; Schematic diagram of an example (lower contact upper gate type); FIG. 3D is a schematic diagram showing an example of a field effect transistor (upper contact upper gate type) according to an embodiment of the present invention; FIG. 4 is a diagram showing an organic electroluminescent (EL) element Schematic diagram showing an example of a display element according to an embodiment of the present invention; FIG. 6 is a schematic view showing another example of a display element according to an embodiment of the present invention; A schematic diagram showing a description of the display control device; Fig. 8 is a schematic view showing a description of the liquid crystal display; Fig. 9 is a schematic view showing a description of the display element shown in Fig. 8; Fig. 10 is a view showing an example 1 to be described later. 3 and a schematic diagram of the field effect transistor fabricated in Comparative Examples 1 and 2; FIG. 11 is a schematic view showing the capacitors fabricated in Examples 1 to 3 and Comparative Examples 1 and 2. FIG. 12 is a schematic diagram for evaluating the relationship between the relative dielectric constant ε and the dielectric loss (tan δ) of the capacitor fabricated in Example 13 to be described later, and the frequency of the applied electric field; FIG. 13 is an evaluation example in comparison. Schematic diagram of the relationship between the relative dielectric constant ε and the dielectric loss (tan δ) of the capacitor fabricated in 1 and the frequency of the applied electric field; and FIG. 14 is an evaluation of the field effect transistor fabricated in Example 13 Schematic diagram of characteristics (Vds-Ids).

圖式旨在描述本發明的示例實施例並且不應該理解為限制其範圍。除非明確指出，否則圖式不應被認為是按比例繪製的。此外，在多個視圖中，相同或相似的圖式符號表示相同或相似的部件。 The drawings are intended to describe example embodiments of the invention and are not intended to The drawings are not to be considered to be drawn to scale unless otherwise indicated. In addition, the same or similar drawing symbols represent the same or similar parts in the various views.

在圖式中所示的說明性實施例中，為了清楚起見採用了特定術語。然而，本發明的公開並不旨在局限於所選擇的特定術語並且應該理解每個特定元件包括具有類似功能，以類似的方式操作，並且實現類似的結果的所有技術等同物。 In the illustrative embodiments shown in the drawings, specific terminology is employed for the sake of clarity. However, the disclosure of the present invention is not intended to be limited to the specific terms selected, and it is understood that each specific element includes all technical equivalents that have similar functions, operate in a similar manner, and achieve similar results.

如本文所用的，除非上下文另有明確說明，否則單數形式「一」、「一個」以及「該」也旨在包括複數形式。 As used herein, the singular forms "", ","

根據本發明，提供了一種不會因加熱製程而在閘極、源極和汲極與閘絕緣層之間產生剝離的場效電晶體。 According to the present invention, there is provided a field effect transistor which does not cause peeling between a gate, a source and a drain and a gate insulating layer due to a heating process.

場效電晶體 Field effect transistor

本發明的場效電晶體包括一閘極、一源極、一汲極、一半導體層、一閘極絕緣層(膜)、以及其它可選元件。 The field effect transistor of the present invention includes a gate, a source, a drain, a semiconductor layer, a gate insulating layer (film), and other optional components.

在本發明的場效電晶體中，閘極絕緣層包括具有矽和鹼土金屬的氧化物，這將在下面詳細描述。 In the field effect transistor of the present invention, the gate insulating layer includes an oxide having cerium and an alkaline earth metal, which will be described in detail below.

日本特開第2013-30784號和第2011-077515號公報中公開的場效電晶體包括SiO₂閘極絕緣層。SiO₂具有很小的線性膨脹係數，約為5×10^-7/K。因此，由於場效電晶體的製造過程中的熱處理，於是熱應力產生在例 如構成場效電晶體的金屬和氧化物材料與SiO₂之間，這導致閘極絕緣層與閘極之間的剝離等。 The field effect transistor disclosed in Japanese Laid-Open Patent Publication No. 2013-30784 and No. 2011-077515 includes a SiO ₂ gate insulating layer. SiO ₂ has a small coefficient of linear expansion of about 5 x 10 ^-7 /K. Therefore, due to the heat treatment in the manufacturing process of the field effect transistor, thermal stress is generated between, for example, the metal and oxide material constituting the field effect transistor and SiO ₂ , which causes peeling between the gate insulating layer and the gate. Wait.

另外，日本特開第2012-191008號公報公開了薄膜電晶體，根據閘極絕緣層的厚度即使在室溫下該薄膜電晶體也不會剝離。 Further, Japanese Laid-Open Patent Publication No. 2012-191008 discloses a thin film transistor in which the thin film transistor is not peeled off even at room temperature according to the thickness of the gate insulating layer.

作為研究閘極絕緣層的結果，本發明人已經發現如果閘極絕緣層包括具有矽和一種或兩種或更多鹼土金屬元素的氧化物，閘極絕緣層的線膨脹係數與SiO₂相比增加，使得可以防止在熱處理期間構成場效電晶體的閘極、源極和汲極與閘極絕緣層之間發生剝離。 As a result of studying the gate insulating layer, the inventors have found that if the gate insulating layer includes an oxide having germanium and one or two or more alkaline earth metal elements, the linear expansion coefficient of the gate insulating layer is compared with that of SiO ₂ . The increase makes it possible to prevent peeling between the gate, the source and the drain of the field effect transistor and the gate insulating layer during the heat treatment.

閘極 Gate

閘極沒有特別限制並且可以根據預期目的適當地選擇，只要閘極是配置為向場效電晶體施加閘極電壓的電極。 The gate is not particularly limited and may be appropriately selected depending on the intended purpose as long as the gate is an electrode configured to apply a gate voltage to the field effect transistor.

閘極與閘極絕緣層接觸並且經由閘極絕緣層面向半導體層。 The gate is in contact with the gate insulating layer and faces the semiconductor layer via the gate insulating layer.

閘極的材料沒有特別限制並且可以根據預期目的適當地選擇。材料的示例包括：金屬(例如，Mo、Al、Au、Ag以及Cu)以及這些金屬的合金；透明導電氧化物，例如氧化銦錫(ITO)和銻摻雜氧化錫(ATO)；以及有機導體，例如聚乙烯二氧噻吩(PEDOT)和聚苯胺(PANI)。 The material of the gate is not particularly limited and may be appropriately selected depending on the intended purpose. Examples of the material include: metals (for example, Mo, Al, Au, Ag, and Cu) and alloys of these metals; transparent conductive oxides such as indium tin oxide (ITO) and antimony-doped tin oxide (ATO); and organic conductors For example, polyethylene dioxythiophene (PEDOT) and polyaniline (PANI).

形成閘極的方法 Method of forming a gate

閘極的形成方法沒有特別限制並且可以根據預期目的適當地選擇。形成方法的示例包括：(i)透過濺射或浸塗形成薄膜以及透過光蝕刻法將薄膜圖案化的方法；以及(ii)透過諸如噴墨印刷，奈米壓印或凹版印刷的印刷製程直接形成具有期望形狀的薄膜的方法。 The method of forming the gate is not particularly limited and may be appropriately selected depending on the intended purpose. Examples of the formation method include: (i) a method of forming a thin film by sputtering or dip coating and patterning a thin film by photolithography; and (ii) a direct printing process by, for example, inkjet printing, nanoimprinting or gravure printing A method of forming a film having a desired shape.

閘極的平均膜厚度沒有特別限制並且可以根據預期目的適當地選擇。然而，閘電極的平均膜厚度較佳為20nm至1μm，更佳為50nm至300nm。 The average film thickness of the gate is not particularly limited and may be appropriately selected depending on the intended purpose. However, the average film thickness of the gate electrode is preferably from 20 nm to 1 μm, more preferably from 50 nm to 300 nm.

源極和汲極 Source and bungee

源極和汲極沒有特別限制並且可以根據預期目的適當地選擇，只要源極和汲極是配置為從場效電晶體輸出電流的電極。 The source and the drain are not particularly limited and may be appropriately selected depending on the intended purpose as long as the source and the drain are electrodes configured to output a current from the field effect transistor.

源極和汲極形成為與閘極絕緣層接觸。 The source and drain are formed in contact with the gate insulating layer.

源極和汲極的材料沒有特別限制並且可以根據預期目的適當地選擇。材料的示例包括：金屬(例如，Mo、Al、Au、Ag以及Cu)及這些金屬的合金；透明導電氧化物，例如氧化銦錫(ITO)和銻摻雜氧化錫(ATO)；以及有機導體，例如聚乙烯二氧噻吩(PEDOT)和聚苯胺(PANI)。 The materials of the source and the drain are not particularly limited and may be appropriately selected depending on the intended purpose. Examples of the material include: metals (for example, Mo, Al, Au, Ag, and Cu) and alloys of these metals; transparent conductive oxides such as indium tin oxide (ITO) and antimony-doped tin oxide (ATO); and organic conductors For example, polyethylene dioxythiophene (PEDOT) and polyaniline (PANI).

形成源極和汲極的方法 Method of forming source and drain

源極和汲極的形成方法沒有特別限制並且可以根據預期目的適當地選擇。形成方法的示例包括：(i)透過濺射或浸塗形成薄膜以及透過光蝕刻法將薄膜圖案化的方法；以及(ii)透過諸如噴墨印刷、奈米壓印或凹版印刷的印刷製程直接形成具有期望形狀的薄膜的方法。 The method of forming the source and the drain is not particularly limited and may be appropriately selected depending on the intended purpose. Examples of the formation method include: (i) a method of forming a film by sputtering or dip coating and patterning a film by photolithography; and (ii) a direct printing process such as inkjet printing, nanoimprinting or gravure printing A method of forming a film having a desired shape.

源極和汲極的平均膜厚度沒有特別限制並且可以根據預期目的適當地選擇。然而，平均膜厚度較佳為20nm至1μm，更佳為50nm至300nm。 The average film thickness of the source and the drain is not particularly limited and may be appropriately selected depending on the intended purpose. However, the average film thickness is preferably from 20 nm to 1 μm, more preferably from 50 nm to 300 nm.

半導體層 Semiconductor layer

半導體層至少形成在源極與汲極之間。 The semiconductor layer is formed at least between the source and the drain.

在此，「之間」是指半導體層與源極和汲極一起使場效電晶體起作用的位置。半導體層的位置沒有特別限制並且可以根據預期目的適當地選擇，只要位置是上述位置。 Here, "between" refers to a position where a semiconductor layer acts together with a source and a drain to cause a field effect transistor to function. The position of the semiconductor layer is not particularly limited and may be appropriately selected depending on the intended purpose as long as the position is the above position.

半導體層與閘極絕緣層、源極以及汲極接觸。 The semiconductor layer is in contact with the gate insulating layer, the source, and the drain.

半導體層的材料沒有特別限制並且可以根據預期目的適當地選擇。材料的示例包括矽半導體和氧化物半導體。 The material of the semiconductor layer is not particularly limited and may be appropriately selected depending on the intended purpose. Examples of materials include germanium semiconductors and oxide semiconductors.

矽半導體的示例包括非晶矽和多晶矽。 Examples of the germanium semiconductor include amorphous germanium and polycrystalline germanium.

氧化物半導體的示例包括InGa-Zn-O、In-Zn-O和In-Mg-O。 Examples of the oxide semiconductor include InGa-Zn-O, In-Zn-O, and In-Mg-O.

在這些示例中，氧化物半導體是較佳的。 In these examples, an oxide semiconductor is preferred.

形成半導體層的方法 Method of forming a semiconductor layer

半導體層的形成方法沒有特別限制並且可以根據預期目的適當地選擇。形成方法的示例包括：透過真空製程(例如濺射、脈衝雷射沉積(PLD)，化學氣相沉積(CVD)或原子層沉積(ALD))或溶液製程(浸塗、旋塗或模塗)形成薄膜，並且透過光蝕刻法將薄膜圖案化的方法；以及透過諸 如噴墨印刷、奈米壓印或凹版印刷的印刷方法直接形成具有期望形狀的薄膜的方法。 The method of forming the semiconductor layer is not particularly limited and may be appropriately selected depending on the intended purpose. Examples of the formation method include: through a vacuum process (for example, sputtering, pulsed laser deposition (PLD), chemical vapor deposition (CVD) or atomic layer deposition (ALD)) or a solution process (dip coating, spin coating or die coating) a method of forming a thin film and patterning the thin film by photolithography; and A printing method such as inkjet printing, nanoimprinting or gravure printing directly forms a film having a desired shape.

半導體層的平均膜厚度沒有特別限制並且可以根據預期目的適當地選擇。然而，平均膜厚度較佳為5nm至1μm，更佳為10nm至0.5μm。 The average film thickness of the semiconductor layer is not particularly limited and may be appropriately selected depending on the intended purpose. However, the average film thickness is preferably from 5 nm to 1 μm, more preferably from 10 nm to 0.5 μm.

閘極絕緣層 Gate insulation

閘極絕緣層通常設置在閘極與半導體層之間。 A gate insulating layer is usually disposed between the gate and the semiconductor layer.

閘極絕緣層包括氧化物。 The gate insulating layer includes an oxide.

氧化物 Oxide

氧化物至少包括Si(矽)和一種或兩種或更多的鹼土金屬元素，較佳包括Al(鋁)和B(硼)中的至少一種，並且根據需要還包括其它組分。 The oxide includes at least Si (cerium) and one or two or more alkaline earth metal elements, preferably at least one of Al (aluminum) and B (boron), and further includes other components as needed.

在氧化物中，由上述Si形成的SiO₂呈非晶結構。此外，鹼土金屬具有裂解Si-O鍵的功能。因此，可以透過Si和鹼土金屬的組成比例來控制所形成的氧化物的相對介電常數和線膨脹係數。 In the oxide, SiO ₂ formed of the above Si has an amorphous structure. Further, the alkaline earth metal has a function of cracking Si-O bonds. Therefore, the relative dielectric constant and the linear expansion coefficient of the formed oxide can be controlled by the composition ratio of Si and alkaline earth metal.

氧化物較佳含有Al、或B或兩者。類似於SiO₂，由Al所形成的Al₂O₃，和由B所形成的B₂O₃各自形成非晶結構。因此，在氧化物中更穩定地形成非晶結構，並且可以形成更均勻的絕緣膜。由於鹼土金屬根據其組成比例改變Al和B的配位結構，因此可以控制氧化物的相對介電常數和線性膨脹係數。 The oxide preferably contains Al, or B or both. Similar to SiO ₂ , Al ₂ O ₃ formed of Al and B ₂ O ₃ formed of B each form an amorphous structure. Therefore, an amorphous structure is formed more stably in the oxide, and a more uniform insulating film can be formed. Since the alkaline earth metal changes the coordination structure of Al and B according to the composition ratio thereof, the relative dielectric constant and the linear expansion coefficient of the oxide can be controlled.

氧化物中的鹼土金屬的實例包括Be(鈹)、Mg(鎂)、Ca(鈣)、Sr(鍶)以及Ba(鋇)。它們可以單獨使用或組合使用。 Examples of the alkaline earth metal in the oxide include Be (yttrium), Mg (magnesium), Ca (calcium), Sr (niobium), and Ba (niobium). They can be used alone or in combination.

氧化物中的Si和鹼土金屬的組成比例根據預期目的適當選擇，沒有任何限制，但是其組成比例較佳在以下範圍內。 The composition ratio of Si and alkaline earth metal in the oxide is appropriately selected depending on the intended purpose without any limitation, but the composition ratio thereof is preferably within the following range.

在氧化物中，基於氧化物(SiO₂、BeO、MgO、CaO、SrO、BaO)的轉化率，Si和鹼土金屬(Si：鹼土金屬)的組成比例較佳為50.0莫耳%~90.0莫耳%：10.0莫耳%~50.0莫耳%。 In the oxide, the composition ratio of Si and alkaline earth metal (Si: alkaline earth metal) is preferably 50.0 mol% to 90.0 mol based on the conversion ratio of oxides (SiO ₂ , BeO, MgO, CaO, SrO, BaO). %: 10.0 mol%~50.0 mol%.

氧化物中的Si，鹼土金屬以及Al及/或B的組成比例根據預期目的適當地選擇，沒有任何限制，但是其組成比例較佳在以下範圍內。 The composition ratio of Si, alkaline earth metal, and Al and/or B in the oxide is appropriately selected depending on the intended purpose without any limitation, but the composition ratio thereof is preferably within the following range.

在氧化物中，基於氧化物(SiO₂、BeO、MgO、CaO、SrO、BaO、Al₂O₃、B₂O₃)的轉化率，Si、鹼土金屬、以及Al及/或B(Si：鹼土金屬：Al及或B)的組成比例較佳為50.0莫耳%至90.0莫耳%：5.0莫耳%至20.0莫耳%：5.0莫耳%至30.0莫耳%。 Among oxides, based on the conversion of oxides (SiO ₂ , BeO, MgO, CaO, SrO, BaO, Al ₂ O ₃ , B ₂ O ₃ ), Si, alkaline earth metals, and Al and/or B (Si: The composition ratio of the alkaline earth metal: Al and or B) is preferably from 50.0 mol% to 90.0 mol%: 5.0 mol% to 20.0 mol%: 5.0 mol% to 30.0 mol%.

例如透過螢光X射線光譜、電子探針微量分析(EPMA)、感應耦合電漿原子發射光譜(ICP-AES)等分析氧化物的陽離子元素以計算氧化物中的氧化物比例(SiO₂、BeO、MgO、CaO、SrO、BaO、Al₂O₃和B₂O₃)。 For example, the cation elements of the oxide are analyzed by fluorescence X-ray spectroscopy, electron probe microanalysis (EPMA), inductively coupled plasma atomic emission spectroscopy (ICP-AES), etc. to calculate the proportion of oxides in the oxide (SiO ₂ , BeO). , MgO, CaO, SrO, BaO, Al ₂ O ₃ and B ₂ O ₃ ).

閘極絕緣層的線膨脹係數根據預期目的適當地選擇，沒有任何限制。然而，從防止閘極、源極和汲極與閘極絕緣層之間的剝離的觀點來看，其組成比例較佳在以下範圍內。 The coefficient of linear expansion of the gate insulating layer is appropriately selected depending on the intended purpose without any limitation. However, from the viewpoint of preventing peeling between the gate, the source and the drain and the gate insulating layer, the composition ratio thereof is preferably within the following range.

閘極絕緣層的線膨脹係數較佳為20.0×10^-7/K以上，更佳為20.0×10^-7~70.0×10^-7/K。 The linear expansion coefficient of the gate insulating layer is preferably 20.0 × 10 ^-7 /K or more, more preferably 20.0 × 10 ^-7 ~ 70.0 × 10 ^-7 /K.

例如透過使用熱機械分析儀測量線性膨脹係數。在該測量中，可以透過單獨生產具有與閘極絕緣層相同組合物的測量樣本來測量線膨脹係數，而無需生產場效電晶體。 For example, the linear expansion coefficient is measured by using a thermomechanical analyzer. In this measurement, the coefficient of linear expansion can be measured by separately producing a measurement sample having the same composition as the gate insulating layer, without the need to produce a field effect transistor.

閘極絕緣層的相對介電常數根據預期目的適當地選擇，沒有任何限制。 The relative dielectric constant of the gate insulating layer is appropriately selected depending on the intended purpose without any limitation.

例如透過製造並且利用LCR測量儀測量具有底部電極、介電層(閘極絕緣層)和頂部電極的層疊結構的電容器可以測量相對介電常數。 The relative dielectric constant can be measured, for example, by manufacturing and measuring a laminated structure having a bottom electrode, a dielectric layer (gate insulating layer), and a top electrode using an LCR meter.

形成閘極絕緣層的方法 Method of forming gate insulating layer

閘極絕緣層的形成方法沒有特別限制並且可以根據預期目的適當地選擇。形成方法的示例包括透過諸如濺射、脈衝雷射沉積(PLD)、化學氣相沉積(CVD)、或者原子層沉積(ALD)的真空製程形成薄膜和透過光蝕刻法將薄膜圖案化的方法。 The method of forming the gate insulating layer is not particularly limited and may be appropriately selected depending on the intended purpose. Examples of the formation method include a method of forming a thin film by a vacuum process such as sputtering, pulsed laser deposition (PLD), chemical vapor deposition (CVD), or atomic layer deposition (ALD), and patterning a thin film by photolithography.

此外，透過製備含有氧化物前驅物的塗佈液(閘極絕緣層塗佈液)，將塗佈液塗佈或印刷到要塗佈的物體上，以及在適當的條件下烘烤所得之物而製成閘極絕緣層。 Further, by preparing a coating liquid (gate insulating layer coating liquid) containing an oxide precursor, the coating liquid is applied or printed onto an object to be coated, and baked under appropriate conditions. The gate insulating layer is formed.

閘極絕緣層的平均膜厚較佳為10nm~1000nm，更佳為20nm~500nm。 The average thickness of the gate insulating layer is preferably from 10 nm to 1000 nm, more preferably from 20 nm to 500 nm.

閘極絕緣層塗佈液 Gate insulating layer coating solution

閘極絕緣層塗佈液至少包括含矽化合物、含鹼土金屬的化合物以及溶劑，較佳包括含鋁化合物和含硼化合物中的至少一種，並且根據需要進一步包括其他組分。 The gate insulating layer coating liquid includes at least a cerium-containing compound, an alkaline earth metal-containing compound, and a solvent, and preferably includes at least one of an aluminum-containing compound and a boron-containing compound, and further includes other components as needed.

含矽化合物 Antimony compound

含矽化合物的示例包括無機矽化合物和有機矽化合物。 Examples of the cerium-containing compound include an inorganic cerium compound and an organic cerium compound.

無機矽化合物的示例包括但不限於三氯矽烷、三溴矽烷以及四碘矽烷。 Examples of inorganic cerium compounds include, but are not limited to, trichlorodecane, tribromodecane, and tetraiododecane.

有機矽化合物根據預期目的適當選擇，沒有任何限制，只要是含矽和有機基團的化合物。矽和有機基團透過例如離子鍵、共價鍵或配位鍵鍵結。 The organic hydrazine compound is appropriately selected depending on the intended purpose without any limitation as long as it is a compound containing hydrazine and an organic group. The hydrazine and the organic group are bonded through, for example, an ionic bond, a covalent bond or a coordinate bond.

有機基團沒有特別限制，並且可以根據預期目的適當選擇。例如，較佳為取代或未取代的烷基、取代或未取代的烷氧基、取代或未取代的醯氧基、取代或未取代的苯基。烷基的示例包括但不限於具有1至6個碳原子的烷基。 The organic group is not particularly limited and may be appropriately selected depending on the intended purpose. For example, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted anthraceneoxy group, a substituted or unsubstituted phenyl group is preferred. Examples of alkyl groups include, but are not limited to, alkyl groups having from 1 to 6 carbon atoms.

烷氧基的示例包括但不限於具有1至6個碳原子的烷氧基。 Examples of alkoxy groups include, but are not limited to, alkoxy groups having 1 to 6 carbon atoms.

醯氧基的示例包括但不限於具有1至10個碳原子的醯氧基。 Examples of the decyloxy group include, but are not limited to, a decyloxy group having 1 to 10 carbon atoms.

有機矽化合物的示例包括但不限於四甲氧基矽烷、四乙氧基矽烷、四異丙氧基矽烷、四丁氧基矽烷、1,1,1,3,3,3-六甲基二矽氮烷(HMDS)、雙(三甲基矽烷基)乙炔、三苯基矽烷、2-乙基己酸矽以及四乙醯氧基矽烷。 Examples of the organic ruthenium compound include, but are not limited to, tetramethoxy decane, tetraethoxy decane, tetraisopropoxy decane, tetrabutoxy decane, 1,1,1,3,3,3-hexamethyl Indoxazane (HMDS), bis(trimethyldecyl)acetylene, triphenyldecane, bismuth 2-ethylhexanoate, and tetraethoxydecane.

閘極絕緣層塗佈液中之含矽化合物的量根據預期目的適當地選擇，沒有任何限制。 The amount of the cerium-containing compound in the gate insulating layer coating liquid is appropriately selected depending on the intended purpose without any limitation.

含鹼土金屬的化合物 Alkaline earth metal containing compound

含鹼土金屬化合物的示例包括無機鹼土金屬化合物和有機鹼土金屬化合物。含鹼土金屬化合物中的鹼土金屬的示例包括Be(鈹)、Mg(鎂)、Ca(鈣)、Sr(鍶)、以及Ba(鋇)。 Examples of the alkaline earth metal-containing compound include an inorganic alkaline earth metal compound and an organic alkaline earth metal compound. Examples of the alkaline earth metal in the alkaline earth metal-containing compound include Be (铍), Mg (magnesium), Ca (calcium), Sr (锶), and Ba (钡).

無機鹼土金屬化合物的示例包括鹼土金屬硝酸鹽、鹼土金屬硫酸鹽、鹼土金屬氯化物、鹼土金屬氟化物、鹼土金屬溴化物以及鹼土金屬碘化物。 Examples of the inorganic alkaline earth metal compound include alkaline earth metal nitrate, alkaline earth metal sulfate, alkaline earth metal chloride, alkaline earth metal fluoride, alkaline earth metal bromide, and alkaline earth metal iodide.

鹼土金屬硝酸鹽的示例包括硝酸鎂、硝酸鈣、硝酸鍶和硝酸鋇。 Examples of the alkaline earth metal nitrates include magnesium nitrate, calcium nitrate, cerium nitrate, and cerium nitrate.

鹼土金屬硫酸鹽的示例包括硫酸鎂、硫酸鈣、硫酸鍶以及硫酸鋇。 Examples of the alkaline earth metal sulfate include magnesium sulfate, calcium sulfate, barium sulfate, and barium sulfate.

鹼土金屬氯化物的示例包括氯化鎂、氯化鈣、氯化鍶以及氯化鋇。 Examples of the alkaline earth metal chloride include magnesium chloride, calcium chloride, barium chloride, and barium chloride.

鹼土金屬氟化物的示例包括氟化鎂、氟化鈣、氟化鍶以及氟化鋇。 Examples of alkaline earth metal fluorides include magnesium fluoride, calcium fluoride, barium fluoride, and barium fluoride.

鹼土金屬溴化物的示例包括溴化鎂、溴化鈣、溴化鍶以及溴化鋇。 Examples of the alkaline earth metal bromide include magnesium bromide, calcium bromide, barium bromide, and barium bromide.

鹼土金屬碘化物的示例包括碘化鎂、碘化鈣、碘化鍶以及碘化鋇。 Examples of the alkaline earth metal iodide include magnesium iodide, calcium iodide, cesium iodide, and cesium iodide.

有機鹼土金屬化合物沒有特別限制並且可以根據預期目的適當地選擇，只要有機鹼土金屬化合物各自是包含鹼土金屬和有機基團的化合物。鹼土金屬和有機基團透過例如離子鍵、共價鍵或配位鍵鍵結。 The organic alkaline earth metal compound is not particularly limited and may be appropriately selected depending on the intended purpose as long as the organic alkaline earth metal compounds are each a compound containing an alkaline earth metal and an organic group. The alkaline earth metal and the organic group are bonded through, for example, an ionic bond, a covalent bond or a coordinate bond.

有機基團沒有特別限制並且可以根據預期目的適當選擇。例如，較佳為取代或未取代的烷基、取代或未取代的烷氧基、取代或未取代的醯氧基、取代或未取代的苯基、取代或未取代的乙醯丙酮基以及取代或未取代的磺酸基。 The organic group is not particularly limited and may be appropriately selected depending on the intended purpose. For example, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted decyloxy group, a substituted or unsubstituted phenyl group, a substituted or unsubstituted acetoacetone group, and a substitution are preferred. Or an unsubstituted sulfonic acid group.

烷基的示例包括但不限於具有1至6個碳原子的烷基。 Examples of alkyl groups include, but are not limited to, alkyl groups having from 1 to 6 carbon atoms.

烷氧基的示例包括但不限於具有1至6個碳原子的烷氧基。 Examples of alkoxy groups include, but are not limited to, alkoxy groups having 1 to 6 carbon atoms.

醯氧基的示例包括但不限於具有1至10個碳原子的醯氧基，由例如乙酸苯甲酸的苯環部分取代的醯氧基，由例如乳酸的羥基部分取代的醯氧基，以及具有例如草酸和檸檬酸的兩個或多個羰基的醯氧基。 Examples of the decyloxy group include, but are not limited to, a decyloxy group having 1 to 10 carbon atoms, a decyloxy group substituted with a benzene ring moiety such as benzoic acid benzoate, a decyloxy group substituted with a hydroxy moiety such as lactic acid, and For example, a decyloxy group of two or more carbonyl groups of oxalic acid and citric acid.

有機鹼土金屬的示例包括但不限於甲氧化鎂、乙氧化鎂、二乙基鎂、乙酸鎂、甲酸鎂、乙醯丙酮鎂、2-乙基己酸鎂、乳酸鎂、環烷酸鎂、檸檬酸鎂、水楊酸鎂、苯甲酸鎂、草酸鎂、三氟甲磺酸鎂、甲氧化鈣、乙氧化鈣、乙酸鈣、甲酸鈣、乙醯丙酮鈣、二新戊醯甲酸鈣、2-乙基己酸鈣、乳酸鈣、環烷酸鈣、檸檬酸鈣、水楊酸鈣、新癸酸鈣、苯甲酸鈣、草酸鈣、異丙氧化鍶、乙酸鍶、甲酸鍶、乙醯丙酮鍶、2-乙基己酸鍶、乳酸鍶、環烷酸鍶、水楊酸鍶、草酸鍶、乙氧化鋇、異丙氧化鋇、乙酸鋇、甲酸鋇、乙醯丙酮鋇、2-乙基己酸鋇、乳酸鋇、環烷酸鋇、萘酸鋇、新癸酸鋇、草酸鋇、苯甲酸鋇以及三氟甲磺酸鋇。 Examples of organic alkaline earth metals include, but are not limited to, magnesium oxide, magnesium sulphate, diethyl magnesium, magnesium acetate, magnesium formate, magnesium acetonate, magnesium 2-ethylhexanoate, magnesium lactate, magnesium naphthenate, lemon Magnesium sulphate, magnesium salicylate, magnesium benzoate, magnesium oxalate, magnesium triflate, calcium sulphate, calcium sulphate, calcium acetate, calcium formate, calcium acetyl acetonate, calcium dipentyl ruthenate, 2- Calcium ethylhexanoate, calcium lactate, calcium naphthenate, calcium citrate, calcium salicylate, calcium neodecanoate, calcium benzoate, calcium oxalate, barium isopropoxide, barium acetate, barium formate, barium acetate , 2-ethylhexanoate, barium lactate, barium naphthenate, barium salicylate, barium oxalate, barium ethoxide, barium isopropoxide, barium acetate, barium formate, barium acetone, 2-ethylhexyl Barium strontium, barium lactate, barium naphthenate, barium naphthenate, barium neodecanoate, barium oxalate, barium benzoate and barium triflate.

閘極絕緣體層塗佈液中之含鹼土金屬化合物的量根據預期目的適當地選擇，沒有任何限制。 The amount of the alkaline earth metal-containing compound in the gate insulator layer coating liquid is appropriately selected depending on the intended purpose without any limitation.

含鋁化合物 Aluminum-containing compound

含鋁化合物的示例是無機鋁化合物和有機鋁化合物。 Examples of the aluminum-containing compound are an inorganic aluminum compound and an organoaluminum compound.

無機鋁化合物的示例包括氯化鋁、硝酸鋁、溴化鋁、氫氧化鋁、硼酸鋁、三氟化鋁、碘化鋁、硫酸鋁、磷酸鋁以及硫酸銨鋁。 Examples of the inorganic aluminum compound include aluminum chloride, aluminum nitrate, aluminum bromide, aluminum hydroxide, aluminum borate, aluminum trifluoride, aluminum iodide, aluminum sulfate, aluminum phosphate, and aluminum ammonium sulfate.

有機鋁化合物根據預期目的適當地選擇，沒有任何限制，只要是含有鋁和有機基團的化合物。鋁和有機基團例如透過離子鍵、共價鍵或配位鍵鍵結。 The organoaluminum compound is appropriately selected depending on the intended purpose without any limitation as long as it is a compound containing aluminum and an organic group. The aluminum and the organic group are bonded, for example, via an ionic bond, a covalent bond or a coordinate bond.

有機基團根據預期目的適當選擇而沒有任何限制。例如，較佳為取代或未取代的烷基、取代或未取代的烷氧基、取代或未取代的醯氧基、取代或未取代的乙醯丙酮基以及取代或未取代的磺酸基。 The organic group is appropriately selected depending on the intended purpose without any limitation. For example, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted decyloxy group, a substituted or unsubstituted acetoacetone group, and a substituted or unsubstituted sulfonic acid group are preferred.

烷基的示例包括但不限於具有1至6個碳原子的烷基。 Examples of alkyl groups include, but are not limited to, alkyl groups having from 1 to 6 carbon atoms.

烷氧基的示例包括但不限於具有1至6個碳原子的烷氧基。 Examples of alkoxy groups include, but are not limited to, alkoxy groups having 1 to 6 carbon atoms.

醯氧基的示例包括但不限於具有1至10個碳原子的醯氧基、由例如乙酸苯甲酸苯環部分取代的醯氧基、由例如乳酸的羥基部分取代的醯氧基以及具有例如草酸和檸檬酸的兩個或更多個羰基的醯氧基。 Examples of the decyloxy group include, but are not limited to, a decyloxy group having 1 to 10 carbon atoms, a decyloxy group substituted by, for example, a benzene ring portion of benzoic acid benzoate, a decyloxy group substituted with a hydroxy moiety such as lactic acid, and having, for example, oxalic acid And a decyloxy group of two or more carbonyl groups of citric acid.

有機鋁化合物的示例包括異丙氧化鋁、二級丁氧化鋁、三乙基鋁、乙氧基二乙基鋁、乙酸鋁、乙醯丙酮鋁、六氟乙醯丙酮鋁、2-乙基己酸鋁、乳酸鋁、苯甲酸鋁、二(二級丁氧基)乙醯乙酸鋁螯合物以及三氟甲磺酸鋁。 Examples of the organoaluminum compound include isopropyl alumina, secondary butadiene alumina, triethylaluminum, diethylaluminum ethoxide, aluminum acetate, aluminum acetonate, aluminum hexafluoroacetate, 2-ethylhexyl Aluminum acid, aluminum lactate, aluminum benzoate, aluminum bis(2-butoxy)acetate, and aluminum triflate.

閘極絕緣層塗佈液中之含鋁化合物的量根據預期目的適當地選擇，沒有任何限制。 The amount of the aluminum-containing compound in the gate insulating layer coating liquid is appropriately selected depending on the intended purpose without any limitation.

含硼化合物 Boron-containing compound

含硼化合物的示例是無機硼化合物和有機硼化合物。 Examples of the boron-containing compound are an inorganic boron compound and an organic boron compound.

無機硼化合物的示例包括正硼酸、氧化硼、三溴化硼、四氟硼酸、硼酸銨以及硼酸鎂。氧化硼的示例包括二氧化二硼、三氧化二硼、三氧化四硼以及五氧化四硼。 Examples of the inorganic boron compound include orthoboric acid, boron oxide, boron tribromide, tetrafluoroboric acid, ammonium borate, and magnesium borate. Examples of the boron oxide include diboron dioxide, boron trioxide, tetraboron trioxide, and tetraboron pentoxide.

有機硼化合物根據預期目的適當地選擇，沒有任何限制，只要是含有硼和有機基團的化合物。 The organoboron compound is appropriately selected depending on the intended purpose without any limitation as long as it is a compound containing boron and an organic group.

硼和有機基團透過例如離子鍵、共價鍵或配位鍵鍵結。 Boron and an organic group are bonded through, for example, an ionic bond, a covalent bond, or a coordinate bond.

有機基團根據預期目的適當選擇而沒有任何限制。例如，較佳為取代或未取代的烷基、取代或未取代的烷氧基、取代或未取代的醯氧基、取代或未取代的苯基、取代或未取代的磺酸基、取代或未取代的噻吩基。 The organic group is appropriately selected depending on the intended purpose without any limitation. For example, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted decyloxy group, a substituted or unsubstituted phenyl group, a substituted or unsubstituted sulfonic acid group, a substitution or Unsubstituted thienyl.

烷基的示例包括但不限於具有1至6個碳原子的烷基。 Examples of alkyl groups include, but are not limited to, alkyl groups having from 1 to 6 carbon atoms.

烷氧基的示例包括但不限於具有1至6個碳原子的烷氧基。 Examples of alkoxy groups include, but are not limited to, alkoxy groups having 1 to 6 carbon atoms.

烷氧基包括具有兩個或更多個氧原子以及兩個或更多個氧原子中的兩個與硼鍵結的有機基團，有機基團形成環結構。另外，烷氧基包括其中包含在烷氧基中的烷基被有機矽烷基取代的情況。醯氧基的示例包括但不限於具有1至10個碳原子的醯氧基。 The alkoxy group includes an organic group having two or more oxygen atoms and two of two or more oxygen atoms bonded to boron, and the organic group forms a ring structure. Further, the alkoxy group includes a case where an alkyl group contained in an alkoxy group is substituted with an organodecyl group. Examples of the decyloxy group include, but are not limited to, a decyloxy group having 1 to 10 carbon atoms.

有機硼化合物的示例包括(R)-5,5-二苯基-2-甲基-3,4-丙醇-1,3,2-硼雜噁唑烷、硼酸三異丙酯、2-異丙氧基-4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊烷、雙(己烯基甘醇酸)二硼酯、4-(4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊烷-2-基)-1H-吡唑、(4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊烷-2-基)苯、四級丁基-N-[4-(4,4,5,5-四甲基-1,2,3-二氧雜硼雜環戊烷-2-基)苯基]胺基甲酸酯、苯基硼酸、3-乙醯基苯基硼酸、三氟化硼乙酸複合物、三氟化硼環丁碸複合物、2-噻吩硼酸以及三(三甲基矽烷基)硼酸鹽。 Examples of the organoboron compound include (R)-5,5-diphenyl-2-methyl-3,4-propanol-1,3,2-boraoxazolidine, triisopropyl borate, 2- Isopropoxy-4,4,5,5-tetramethyl-1,3,2-dioxaborolane, bis(hexenyl glycolic acid) diboronate, 4-(4, 4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)-1H-pyrazole, (4,4,5,5-tetramethyl-1, 3,2-dioxaborolan-2-yl)benzene, tetra-butyl-N-[4-(4,4,5,5-tetramethyl-1,2,3-dioxo Heteroborolan-2-yl)phenyl]carbamate, phenylboronic acid, 3-ethylphenylphenylboronic acid, boron trifluoride acetate complex, boron trifluoride cyclobutane ruthenium complex , 2-thiopheneboronic acid and tris(trimethyldecyl)borate.

閘極絕緣層塗佈液中之含硼化合物的量根據預期目的適當地選擇，沒有任何限制。 The amount of the boron-containing compound in the gate insulating layer coating liquid is appropriately selected depending on the intended purpose without any limitation.

溶劑 Solvent

溶劑根據預期目的適當選擇，沒有任何限制，只要是能够穩定地溶解或分散上述各種化合物的溶劑。 The solvent is appropriately selected depending on the intended purpose without any limitation as long as it is a solvent capable of stably dissolving or dispersing the above various compounds.

具體示例包括但不限於甲苯、二甲苯、均三甲苯、傘花烴、戊基苯、十二烷基苯、聯環己烷、環己基苯、癸烷、十一烷、十二烷、十三烷、十四烷、十五烷、四氫化萘、十氫化萘、異丙醇、苯甲酸乙酯、N,N-二甲基甲醯胺、碳酸亞丙酯、2-乙基己酸、礦物油精、二甲基丙烯脲、4-丁內酯、2-甲氧基乙醇以及水。 Specific examples include, but are not limited to, toluene, xylene, mesitylene, cymene, amylbenzene, dodecylbenzene, dicyclohexane, cyclohexylbenzene, decane, undecane, dodecane, ten Trioxane, tetradecane, pentadecane, tetrahydronaphthalene, decalin, isopropanol, ethyl benzoate, N,N-dimethylformamide, propylene carbonate, 2-ethylhexanoic acid , mineral spirits, dimethyl methene urea, 4-butyrolactone, 2-methoxyethanol and water.

閘極絕緣層塗佈液中之溶劑的量根據預期目的適當地選擇，沒有任何限制。 The amount of the solvent in the gate insulating layer coating liquid is appropriately selected depending on the intended purpose without any limitation.

在閘極絕緣層塗佈液中之含矽化合物和含鹼土金屬化合物(含矽化合物：含鹼土金屬化合物)的組成比例根據預期目的適當地選擇而沒有任何限制，但其組成比例較佳在以下範圍內。 The composition ratio of the cerium-containing compound and the alkaline earth metal-containing compound (the cerium-containing compound: the alkaline earth metal-containing compound) in the gate insulating layer coating liquid is appropriately selected depending on the intended purpose without any limitation, but the composition ratio thereof is preferably the following. Within the scope.

在閘極絕緣層塗佈液中，基於氧化物(SiO₂、BeO、MgO、CaO、SrO、BaO)的轉化率，Si和鹼土金屬(Si：鹼土金屬)的組成比例較佳為50.0莫耳%~90.0莫耳%：10.0莫耳%~50.0莫耳%。 In the gate insulating layer coating liquid, the composition ratio of Si and alkaline earth metal (Si: alkaline earth metal) is preferably 50.0 mol based on the conversion ratio of oxides (SiO ₂ , BeO, MgO, CaO, SrO, BaO). %~90.0 mol%: 10.0 mol%~50.0 mol%.

在閘極絕緣層塗佈液中之含矽化合物、含鹼土金屬化合物和含鋁化合物及/或含硼化合物的組成比例(含矽化合物：含鹼土金屬化合物： 含鋁化合物及/或含硼化合物)的組成比例根據預期目的適當選擇而沒有任何限制，但其組成比例較佳在以下範圍內。 Composition ratio of cerium-containing compound, alkaline earth metal-containing compound, and aluminum-containing compound and/or boron-containing compound in the gate insulating layer coating liquid (containing cerium compound: alkaline earth metal-containing compound: The composition ratio of the aluminum-containing compound and/or the boron-containing compound is appropriately selected depending on the intended purpose without any limitation, but the composition ratio thereof is preferably within the following range.

在閘極絕緣層塗佈液中，基於氧化物(SiO₂、BeO、MgO、CaO、SrO、BaO、Al₂O₃、B₂O₃)的轉化率，Si、鹼土金屬、以及Al和/或B(Si：鹼土金屬：Al及/或B)的組成比例較佳為50.0莫耳%至90.0莫耳%：5.0莫耳%至20.0莫耳%：5.0莫耳%至30.0莫耳%。 In the gate insulating layer coating liquid, based on the conversion ratio of oxides (SiO ₂ , BeO, MgO, CaO, SrO, BaO, Al ₂ O ₃ , B ₂ O ₃ ), Si, alkaline earth metals, and Al and/ Or the composition ratio of B (Si: alkaline earth metal: Al and/or B) is preferably from 50.0 mol% to 90.0 mol%: 5.0 mol% to 20.0 mol%: 5.0 mol% to 30.0 mol%.

使用閘極絕緣層塗佈液的閘極絕緣層的形成方法 Method for forming gate insulating layer using gate insulating layer coating liquid

將說明使用閘極絕緣層塗佈液的閘極絕緣層的形成方法的一個示例。閘極絕緣層的形成方法包括塗佈步驟和熱處理步驟，並且根據需要還包括其它步驟。 An example of a method of forming a gate insulating layer using a gate insulating layer coating liquid will be described. The method of forming the gate insulating layer includes a coating step and a heat treatment step, and further includes other steps as needed.

塗佈步驟沒有特別限制，並且可以根據預期目的適當地選擇，只要塗佈步驟是將閘極絕緣層塗佈液塗佈到待塗佈的物體上的步驟。塗佈方法沒有特別限制，並且可以根據預期目的適當選擇。該方法的示例包括：透過溶液製程形成薄膜並透過光蝕刻法將薄膜圖案化的方法；以及透過例如噴墨印刷、奈米壓印或凹版印刷的印刷製程直接形成具有期望形狀的薄膜的方法。溶液製程的示例包括浸塗、旋塗、模塗和噴嘴印刷。 The coating step is not particularly limited and may be appropriately selected depending on the intended purpose as long as the coating step is a step of applying a gate insulating layer coating liquid onto an object to be coated. The coating method is not particularly limited and may be appropriately selected depending on the intended purpose. Examples of the method include a method of forming a film by a solution process and patterning a film by photolithography; and a method of directly forming a film having a desired shape by a printing process such as inkjet printing, nanoimprinting or gravure printing. Examples of solution processes include dip coating, spin coating, die coating, and nozzle printing.

熱處理步驟沒有特別限制，並且可以根據預期目的適當地選擇，只要熱處理步驟是對塗佈在待塗佈的物體上的閘極絕緣層塗佈液進行熱處理的步驟。注意，在熱處理步驟中，可以透過空氣乾燥來乾燥塗佈在要塗佈的物體上的閘極絕緣層塗佈液。作為熱處理的結果，溶劑蒸發並且產生氧化物。 The heat treatment step is not particularly limited, and may be appropriately selected depending on the intended purpose as long as the heat treatment step is a step of heat-treating the gate insulating layer coating liquid coated on the object to be coated. Note that in the heat treatment step, the gate insulating layer coating liquid coated on the object to be coated may be dried by air drying. As a result of the heat treatment, the solvent evaporates and an oxide is produced.

在熱處理步驟中，較佳在不同的溫度下進行溶劑的蒸發(以下稱為「蒸發處理」)和氧化物的生成(以下稱為「生成處理」)。具體而言，較佳在溶劑蒸發之後，升高溫度以生成氧化物。在生成氧化物時，例如，含矽化合物、含鹼土金屬化合物、含鋁化合物以及含硼化合物中的至少一種被分解。 In the heat treatment step, evaporation of a solvent (hereinafter referred to as "evaporation treatment") and formation of an oxide (hereinafter referred to as "production treatment") are preferably carried out at different temperatures. Specifically, it is preferred to raise the temperature to form an oxide after evaporation of the solvent. At the time of forming an oxide, for example, at least one of a ruthenium-containing compound, an alkali-containing metal compound, an aluminum-containing compound, and a boron-containing compound is decomposed.

蒸發處理的溫度沒有特別限制，並且可以根據所含的溶劑適當地選擇。例如，蒸發處理的溫度為80℃至180℃。對於蒸發，為了降低所 需的溫度，有效的是使用真空烘箱。蒸發處理的時間沒有特別限制，並且可以根據預期目的適當地選擇。例如，蒸發處理的時間為10分鐘至1小時。 The temperature of the evaporation treatment is not particularly limited and may be appropriately selected depending on the solvent contained. For example, the temperature of the evaporation treatment is from 80 ° C to 180 ° C. For evaporation, in order to reduce The required temperature is effective using a vacuum oven. The time of the evaporation treatment is not particularly limited and may be appropriately selected depending on the intended purpose. For example, the evaporation treatment time is from 10 minutes to 1 hour.

生成處理的溫度沒有特別限制，並且可以根據預期目的適當地選擇。然而，生成處理的溫度較佳為100℃以上但低於550℃，更佳為200℃至500℃。生成處理的時間沒有特別限制，並且可以根據預期目的適當地選擇。例如，生成處理的時間為1小時至5小時。 The temperature at which the treatment is generated is not particularly limited and may be appropriately selected depending on the intended purpose. However, the temperature of the formation treatment is preferably 100 ° C or more but less than 550 ° C, more preferably 200 ° C to 500 ° C. The time at which the processing is generated is not particularly limited, and may be appropriately selected depending on the intended purpose. For example, the generation processing time is from 1 hour to 5 hours.

注意，在熱處理步驟中，蒸發處理和生成處理可以連續進行，或者可以以多個步驟的分開的方式進行。 Note that in the heat treatment step, the evaporation treatment and the generation treatment may be continuously performed, or may be performed in a separate manner of a plurality of steps.

熱處理的方法沒有特別限制，並且可以根據預期目的適當地選擇。熱處理的方法的示例包括加熱待塗佈的物體的方法。熱處理中的大氣環境沒有特別限制，並且可以根據預期目的適當選擇。然而，大氣環境較佳為氧氣環境。當在氧氣環境中進行熱處理時，分解產物可以迅速排出到系統外，並且可以加速第一複合氧化物的生成。 The method of the heat treatment is not particularly limited and may be appropriately selected depending on the intended purpose. An example of the method of heat treatment includes a method of heating an object to be coated. The atmospheric environment in the heat treatment is not particularly limited and may be appropriately selected depending on the intended purpose. However, the atmospheric environment is preferably an oxygen environment. When heat treatment is performed in an oxygen atmosphere, the decomposition products can be quickly discharged outside the system, and the formation of the first composite oxide can be accelerated.

在熱處理中，考慮到生成處理的反應的加速，有效的是對蒸發處理後的材料施加波長為400nm或者更短的紫外線。施加波長為400nm或者更短的紫外線可使蒸發處理之後的材料中所含的有機材料的化學鍵裂解，並且可使有機材料分解。因此，可以有效地形成第一複合氧化物。對波長為400nm或者更短的紫外線沒有特別限制，並且可以根據目的適當選擇。紫外線的示例包括從準分子燈所發射的具有222nm波長的紫外線。同樣較佳的使用臭氧代替紫外線或與紫外線組合使用臭氧。對蒸發處理之後的材料施加臭氧加速氧化物的生成。 In the heat treatment, in consideration of the acceleration of the reaction for the formation treatment, it is effective to apply ultraviolet rays having a wavelength of 400 nm or less to the material after the evaporation treatment. The application of ultraviolet rays having a wavelength of 400 nm or less can cleave chemical bonds of organic materials contained in the material after the evaporation treatment, and can decompose the organic materials. Therefore, the first composite oxide can be formed efficiently. The ultraviolet ray having a wavelength of 400 nm or less is not particularly limited and may be appropriately selected depending on the purpose. Examples of the ultraviolet rays include ultraviolet rays having a wavelength of 222 nm emitted from an excimer lamp. It is also preferred to use ozone instead of or in combination with ultraviolet light. The application of ozone to the material after the evaporation treatment accelerates the formation of oxides.

對場效電晶體的結構沒有特別限制，並且可以根據預期目的適當地選擇。場效電晶體的結構的示例包括以下結構。 The structure of the field effect transistor is not particularly limited and may be appropriately selected depending on the intended purpose. Examples of the structure of the field effect transistor include the following structures.

1.一種場效電晶體，包括基板、形成在基板上的閘極、形成在閘極上的閘極絕緣層、形成在閘極絕緣層上的源極和汲極、以及形成在源極與汲極之間的半導體層。 A field effect transistor comprising a substrate, a gate formed on the substrate, a gate insulating layer formed on the gate, a source and a drain formed on the gate insulating layer, and a source and a drain A semiconductor layer between the poles.

2.一種場效電晶體，包括基板、形成在基板上的源極和汲極、形成在源極與汲極之間的半導體層、形成在源極、汲極和半導體層上的閘極絕緣層、以及形成在閘極絕緣層上的閘極。 2. A field effect transistor comprising a substrate, a source and a drain formed on the substrate, a semiconductor layer formed between the source and the drain, and a gate insulating formed on the source, the drain and the semiconductor layer a layer and a gate formed on the gate insulating layer.

作為具有上述1的結構的場效電晶體，例如，有下接觸下閘極型(參見圖3A)和上接觸下閘極型(參見圖3B)。 As the field effect transistor having the structure of the above 1, for example, there are a lower contact lower gate type (see FIG. 3A) and an upper contact lower gate type (see FIG. 3B).

作為具有上述2的結構的場效電晶體，例如，有下接觸上閘極型(參見圖3C)和上接觸上閘極型(參見圖3D)。 As the field effect transistor having the structure of the above 2, for example, there are a lower contact upper gate type (see FIG. 3C) and an upper contact upper gate type (see FIG. 3D).

在圖3A至圖3D中，每個場效電晶體包括基板21、閘極22、閘極絕緣層23、源極24、汲極25以及氧化物半導體層26。氧化物半導體層26可以被例如上述的矽半導體層替換。 In FIGS. 3A to 3D, each field effect transistor includes a substrate 21, a gate 22, a gate insulating layer 23, a source electrode 24, a drain electrode 25, and an oxide semiconductor layer 26. The oxide semiconductor layer 26 can be replaced by, for example, the above-described germanium semiconductor layer.

場效電晶體可以適當地應用於稍後描述的顯示元件，但不限於此。例如，場效電晶體可以應用於IC卡、ID標簽等。 The field effect transistor can be suitably applied to a display element described later, but is not limited thereto. For example, field effect transistors can be applied to IC cards, ID tags, and the like.

顯示元件 Display component

本發明的顯示元件至少包括光控制元件和配置為驅動光控制元件的驅動電路，並且根據需要還包括其它元件。 The display element of the present invention includes at least a light control element and a drive circuit configured to drive the light control element, and further includes other elements as needed.

光控制元件 Light control element

光控制元件沒有特別限制，並且可以根據預期目的適當地選擇，只要光控制元件是配置為根據驅動訊號控制光輸出的元件。光控制元件的示例包括電激發光(EL)元件、電致變色(EC)元件、液晶元件、電泳元件以及電潤濕元件。 The light control element is not particularly limited and may be appropriately selected depending on the intended purpose as long as the light control element is an element configured to control the light output according to the drive signal. Examples of light control elements include electroluminescent (EL) elements, electrochromic (EC) elements, liquid crystal elements, electrophoretic elements, and electrowetting elements.

驅動電路 Drive circuit

驅動電路沒有特別限制，並且可以根據預期目的適當地選擇，只要驅動電路是包含本發明的場效電晶體並且配置為驅動光控制元件的電路。 The driving circuit is not particularly limited and may be appropriately selected depending on the intended purpose as long as the driving circuit is a circuit including the field effect transistor of the present invention and configured to drive the light control element.

其他元件 Other components

對其它元件沒有特別限制，可以適當選擇以適合具體應用。 The other elements are not particularly limited and may be appropriately selected to suit a specific application.

由於顯示元件具有本發明的場效電晶體，因此可以實現長使用壽命和高速操作。 Since the display element has the field effect transistor of the present invention, long life and high speed operation can be achieved.

影像顯示裝置 Image display device

本發明的影像顯示裝置至少包括複數個顯示元件、複數條線路以及一顯示控制裝置。影像顯示裝置還可以包括其它可選元件。 The image display device of the present invention includes at least a plurality of display elements, a plurality of lines, and a display control device. The image display device may also include other optional components.

影像顯示裝置是配置為顯示與影像資料相對應的影像的裝置。 The image display device is a device configured to display an image corresponding to the image data.

顯示元件 Display component

顯示元件沒有特別限制，並且可以適當地選擇以適合於特定應用，只要使用以矩陣布置的本發明的顯示元件即可。 The display elements are not particularly limited, and may be appropriately selected to be suitable for a specific application as long as the display elements of the present invention arranged in a matrix are used.

線路 line

線路沒有特別限制，並且可以被選擇以適合於特定應用，只要線路設置為單獨地向顯示元件中的每個場效電晶體施加閘極電壓。 The line is not particularly limited and can be selected to suit a particular application as long as the line is arranged to apply a gate voltage to each of the field effect transistors individually.

顯示控制裝置 Display control device

顯示控制裝置沒有特別限制，並且可以被選擇以適合於特定應用，只要顯示控制裝置根據影像資料經由多條線路控制每個場效電晶體的各個閘極電壓即可。 The display control device is not particularly limited and may be selected to be suitable for a specific application as long as the display control device controls the respective gate voltages of each of the field effect transistors via a plurality of lines in accordance with the image data.

其他元件 Other components

對其它元件沒有特別限制，可以適當選擇以適合具體應用。 The other elements are not particularly limited and may be appropriately selected to suit a specific application.

由於影像顯示裝置具有本發明的場效電晶體，因此可以實現長使用壽命和高速操作。 Since the image display device has the field effect transistor of the present invention, long life and high speed operation can be achieved.

影像顯示裝置可以應用於諸如行動電話、可攜式音頻播放器、可攜式視頻播放器、電子書、個人數位助理(PDA)的可攜式資訊裝置，以及諸如靜態相機和攝影機的成像裝置。此外，影像顯示器可以用於車輛、飛機、火車、船舶等的移動系統中的各種資訊的顯示。此外，可以將影像顯示裝置應用於測量系統、分析裝置、醫療設備以及廣告媒體中之各種資訊的顯示。 The image display device can be applied to portable information devices such as mobile phones, portable audio players, portable video players, electronic books, personal digital assistants (PDAs), and imaging devices such as still cameras and cameras. In addition, the image display can be used for display of various information in mobile systems of vehicles, airplanes, trains, ships, and the like. In addition, the image display device can be applied to display of various information in measurement systems, analysis devices, medical devices, and advertising media.

系統 system

本發明的系統包括本發明的影像顯示裝置和影像資料產生裝置。 The system of the present invention includes the image display device and image data generating device of the present invention.

影像資料產生裝置基於要顯示的影像資訊產生影像資料，並將影像資料輸出到影像顯示裝置。 The image data generating device generates image data based on the image information to be displayed, and outputs the image data to the image display device.

參照圖式說明本發明的顯示元件、影像顯示裝置以及系統。 A display element, an image display device, and a system of the present invention will be described with reference to the drawings.

說明電視機，作為本發明系統的實施例。 A television set is illustrated as an embodiment of the system of the present invention.

作為本發明系統的實施例的電視機採用了日本特開第2010-074148號公報中第[0038]至[0058]段所述的以及圖1所示的配置。 The television set as an embodiment of the system of the present invention adopts the configuration shown in paragraphs [0038] to [0058] of the Japanese Patent Laid-Open Publication No. 2010-074148 and the configuration shown in FIG.

接著，說明本發明的影像顯示裝置。 Next, an image display device of the present invention will be described.

本發明的影像顯示裝置採用在日本特開第2010-074148號公報中第[0059]和[0060]段落所述的以及圖1和圖2所示的配置。 The image display device of the present invention adopts the configurations shown in the paragraphs [0059] and [0060] of the Japanese Patent Laid-Open Publication No. 2010-074148 and the drawings shown in Figs. 1 and 2.

參照圖式說明本發明的顯示元件。 The display element of the present invention will be described with reference to the drawings.

圖1是顯示其中顯示元件以矩陣設置的顯示器310的圖式。 FIG. 1 is a diagram showing a display 310 in which display elements are arranged in a matrix.

如圖1所示，顯示器310包括沿著X軸設置彼此之間隔開相等間隙的n條數量的掃描線(X0，X1，X2，X3，...，Xn-2，Xn-1)、沿Y軸設置彼此之間隔開相等間隙的m條數量的資料線(Y0，Y1，Y2，Y3，...，Ym-2，Ym-1)、以及沿Y軸設置彼此之間隔開相等間隙的m條數量的電流供給線(Y0i，Y1i，Y2i，Y3i，...，Ym-1i)。 As shown in FIG. 1, the display 310 includes n number of scanning lines (X0, X1, X2, X3, ..., Xn-2, Xn-1) arranged along the X-axis with equal gaps therebetween. The Y-axis sets m number of data lines (Y0, Y1, Y2, Y3, ..., Ym-2, Ym-1) spaced apart from each other with equal gaps, and is disposed with equal gaps along the Y-axis. m number of current supply lines (Y0i, Y1i, Y2i, Y3i, ..., Ym-1i).

因此，可以透過掃描線和資料線來定義顯示元件。 Therefore, the display elements can be defined by the scan lines and the data lines.

圖2是顯示本發明的顯示元件的示例的示意圖。 2 is a schematic view showing an example of a display element of the present invention.

如圖2所示，該顯示元件包括一有機電激發光(EL)元件350和用於使有機EL元件350發光的一驅動電路320。亦即，該顯示器310是採用所謂主動矩陣系統的有機EL顯示器。此外，該顯示器310是支援彩色的一32英寸顯示器。然而，尺寸不限於此。 As shown in FIG. 2, the display element includes an organic electroluminescent (EL) element 350 and a driving circuit 320 for causing the organic EL element 350 to emit light. That is, the display 310 is an organic EL display using a so-called active matrix system. In addition, the display 310 is a 32-inch display that supports color. However, the size is not limited to this.

將說明圖2所示的驅動電路320。 The drive circuit 320 shown in Fig. 2 will be explained.

驅動電路320包括兩個場效電晶體11和12以及電容器13。 The drive circuit 320 includes two field effect transistors 11 and 12 and a capacitor 13.

場效電晶體11用作開關元件。閘極G連接到預定的掃描線以及源極S連接到預定的資料線。另外，汲極D連接到電容器13的一端。 The field effect transistor 11 is used as a switching element. The gate G is connected to a predetermined scan line and the source S is connected to a predetermined data line. In addition, the drain D is connected to one end of the capacitor 13.

電容器13儲存場效電晶體11的狀態，即資料。電容器13的另一端連接到預定的電流供給線。 The capacitor 13 stores the state of the field effect transistor 11, i.e., data. The other end of the capacitor 13 is connected to a predetermined current supply line.

場效電晶體12向有機EL元件350提供大電流。閘極G連接到場效電晶體11的汲極D。汲極D連接到有機EL元件350的陽極以及源極S連接到預定的電流供給線。 The field effect transistor 12 supplies a large current to the organic EL element 350. The gate G is connected to the drain D of the field effect transistor 11. The drain D is connected to the anode of the organic EL element 350 and the source S is connected to a predetermined current supply line.

當場效電晶體11接通時，場效電晶體12驅動有機EL元件350。 When the field effect transistor 11 is turned on, the field effect transistor 12 drives the organic EL element 350.

如圖3A所示，場效電晶體11和12中的每一個包括例如基板21、閘極22、閘極絕緣層23、源極24、汲極25以及氧化物半導體層26。 As shown in FIG. 3A, each of the field effect transistors 11 and 12 includes, for example, a substrate 21, a gate 22, a gate insulating layer 23, a source electrode 24, a drain electrode 25, and an oxide semiconductor layer 26.

場效電晶體11和12可以由本發明的場效電晶體的說明中所提及的材料和製程形成。 The field effect transistors 11 and 12 can be formed from the materials and processes mentioned in the description of the field effect transistor of the present invention.

圖4是顯示有機EL元件的示例的示意圖。 4 is a schematic view showing an example of an organic EL element.

在圖4中，有機EL元件350包括陰極312，陽極314以及有機EL薄膜層340。 In FIG. 4, the organic EL element 350 includes a cathode 312, an anode 314, and an organic EL thin film layer 340.

陰極312的材料沒有特別限制，可以適當選擇以適合特定應用。例如，較佳為鋁(Al)、鎂(Mg)和銀(Ag)的合金、鋁(Al)-鋰(Li)合金以及氧化銦錫(ITO)。具有足够厚度的鎂(Mg)和銀(Ag)的合金變成高反射率電極，以及具有極薄厚度(約20nm)的鎂(Mg)和銀(Ag)的合金變成半透明電極。在圖4中，從陽極側輸出光。然而，透過使陰極變成透明或半透明，可以從陰極輸出光。 The material of the cathode 312 is not particularly limited and may be appropriately selected to suit a particular application. For example, an alloy of aluminum (Al), magnesium (Mg), and silver (Ag), an aluminum (Al)-lithium (Li) alloy, and indium tin oxide (ITO) are preferable. An alloy of magnesium (Mg) and silver (Ag) having a sufficient thickness becomes a high reflectance electrode, and an alloy of magnesium (Mg) and silver (Ag) having an extremely thin thickness (about 20 nm) becomes a translucent electrode. In Fig. 4, light is output from the anode side. However, by making the cathode transparent or translucent, light can be output from the cathode.

陽極314的材料沒有特別限制，可以適當選擇以適合特定應用。例如，氧化銦錫(ITO)、氧化銦鋅(IZO)以及銀(Ag)和釹(Nd)的合金是合適的。如果使用銀的合金，則獲得高反射率電極，其適於從負電極側輸出光。 The material of the anode 314 is not particularly limited and may be appropriately selected to suit a particular application. For example, indium tin oxide (ITO), indium zinc oxide (IZO), and alloys of silver (Ag) and niobium (Nd) are suitable. If an alloy of silver is used, a high reflectivity electrode is obtained which is suitable for outputting light from the negative electrode side.

有機EL薄膜層340包括電子傳輸層342、發光層344和電洞傳輸層346。電子傳輸層342連接到陰極312，電洞傳輸層346連接到陽極314。如果在陽極314和陰極312之間施加預定的電壓，則發光層344發光。 The organic EL thin film layer 340 includes an electron transport layer 342, a light emitting layer 344, and a hole transport layer 346. Electron transport layer 342 is coupled to cathode 312 and hole transport layer 346 is coupled to anode 314. If a predetermined voltage is applied between the anode 314 and the cathode 312, the light-emitting layer 344 emits light.

較佳為由電子傳輸層342和發光層344形成單層。此外，同樣較佳為在電子傳輸層342與陰極312之間提供一電子注入層。此外，較佳為在電洞傳輸層346與陽極314之間提供一電洞注入層。 Preferably, a single layer is formed by the electron transport layer 342 and the light emitting layer 344. Further, it is also preferable to provide an electron injecting layer between the electron transporting layer 342 and the cathode 312. Further, it is preferable to provide a hole injection layer between the hole transport layer 346 and the anode 314.

在圖4中，作為光控制元件，說明在所謂的「底部發射」有機EL元件的情況下，從基板側輸出光。光控制元件可為從基板的相對側輸出光的「頂部發射」的有機EL元件。 In FIG. 4, as a light control element, in the case of a so-called "bottom emission" organic EL element, light is output from the substrate side. The light control element may be a "top emission" organic EL element that outputs light from the opposite side of the substrate.

圖5是顯示其中結合了有機EL元件350和驅動電路320的顯示元件的示例的圖式。 FIG. 5 is a diagram showing an example of a display element in which the organic EL element 350 and the driving circuit 320 are combined.

該顯示元件包括基板31、第一閘極32、第二閘極33、閘極絕緣層34、第一源極35和第二源極36、第一汲極37和第二汲極38、第一氧化物半導體層39和第二氧化物半導體層40、第一鈍化層41和第二鈍化層42、層之間的層間絕緣層43、有機EL層44以及陰極45。第一汲極37和第二閘極33經由形成在閘極絕緣層34上的通孔彼此連接。第一氧化物半導體層39和第二氧化物半導體層40可以用例如上述的矽半導體層代替。 The display element includes a substrate 31, a first gate 32, a second gate 33, a gate insulating layer 34, a first source 35 and a second source 36, a first drain 37 and a second drain 38, The oxide semiconductor layer 39 and the second oxide semiconductor layer 40, the first passivation layer 41 and the second passivation layer 42, the interlayer insulating layer 43, the organic EL layer 44, and the cathode 45 between the layers. The first drain 37 and the second gate 33 are connected to each other via via holes formed in the gate insulating layer 34. The first oxide semiconductor layer 39 and the second oxide semiconductor layer 40 may be replaced with, for example, the above-described germanium semiconductor layer.

在圖5中，為了方便起見，可在第二閘極33與第二汲極38之間形成電容器。然而，電容器的實際位置不受限制，並且可以在必要位置適當地設計具有所需容量的電容器。 In FIG. 5, a capacitor may be formed between the second gate 33 and the second drain 38 for the sake of convenience. However, the actual position of the capacitor is not limited, and a capacitor having a desired capacity can be appropriately designed at a necessary position.

此外，在圖5所示的顯示元件中，第二汲極38在有機EL元件350中用作陽極。 Further, in the display element shown in FIG. 5, the second drain 38 serves as an anode in the organic EL element 350.

基板31、第一閘極32和第二閘極33、閘絕緣層34、第一源極35、第二源極36、第一汲極37、第二汲極38、第一氧化物半導體層39、第二氧化物半導體層40可以由在本發明的場效電晶體的說明中所提到的材料和製程形成。 The substrate 31, the first gate 32 and the second gate 33, the gate insulating layer 34, the first source 35, the second source 36, the first drain 37, the second drain 38, and the first oxide semiconductor layer 39. The second oxide semiconductor layer 40 can be formed of the materials and processes mentioned in the description of the field effect transistor of the present invention.

閘極絕緣層34對應於本發明的場效電晶體的閘極絕緣層。 The gate insulating layer 34 corresponds to the gate insulating layer of the field effect transistor of the present invention.

層間絕緣層(平坦化層)43的材料沒有特別限制，並且可以適當地選擇以適合具體應用。例如，較佳為有機材料、無機材料、無機材料和有機材料的複合材料。 The material of the interlayer insulating layer (planarization layer) 43 is not particularly limited, and may be appropriately selected to suit a specific application. For example, a composite material of an organic material, an inorganic material, an inorganic material, and an organic material is preferred.

有機材料的示例包括諸如聚醯亞胺、丙烯酸樹脂、氟樹脂、非氟樹脂、烯烴樹脂、矽氧樹脂和使用這些樹脂的光敏樹脂的樹脂。 Examples of the organic material include resins such as polyimide, acrylic resin, fluororesin, non-fluororesin, olefin resin, oxime resin, and photosensitive resin using these resins.

無機材料的具體示例是旋塗玻璃(SOG)材料，例如AQUAMICA^TM(由AZ Electronic Materials plc製造)。 Specific examples of the inorganic material is a spin-on glass (SOG) material, e.g. AQUAMICA ^TM (manufactured by AZ Electronic Materials plc).

作為無機材料和有機材料的複合材料，例如，無機材料和有機材料的複合材料由矽烷化合物形成(在日本特開第2007-158146號公報中公開)。層間絕緣層較佳具有隔絕大氣中所含的水分、氧和氫的阻擋特性。 As a composite material of an inorganic material and an organic material, for example, a composite material of an inorganic material and an organic material is formed of a decane compound (disclosed in Japanese Laid-Open Patent Publication No. 2007-158146). The interlayer insulating layer preferably has a barrier property of isolating moisture, oxygen and hydrogen contained in the atmosphere.

層間絕緣層的形成製程沒有特別限制，可以適當地選擇以適合具體應用。例如，較佳為透過旋塗法、噴墨印刷法、狹縫塗佈法、噴嘴印刷法、凹版印刷法、以及浸漬塗佈法的方法直接形成具有期望形狀的薄膜，或者在感光材料的情況下透過光蝕刻法進行圖案化。 The formation process of the interlayer insulating layer is not particularly limited and may be appropriately selected to suit a specific application. For example, it is preferred to directly form a film having a desired shape by a spin coating method, an inkjet printing method, a slit coating method, a nozzle printing method, a gravure printing method, and a dip coating method, or in the case of a photosensitive material. The patterning is performed by photolithography.

在形成層間絕緣層之後，對層間絕緣層進行的熱處理作為後處理，這對於穩定構成顯示元件的場效電晶體的特性是較佳的。 After the formation of the interlayer insulating layer, the heat treatment of the interlayer insulating layer is performed as a post-treatment, which is preferable for stabilizing the characteristics of the field effect transistor constituting the display element.

有機EL層44和陰極45的製造方法沒有特別限制，可以適當選擇以適合特定的用途。例如，較佳為諸如真空沉積法和濺射法的真空成膜方法以及諸如噴墨和噴嘴塗佈的溶液法。 The method of producing the organic EL layer 44 and the cathode 45 is not particularly limited, and may be appropriately selected to suit a particular use. For example, vacuum film forming methods such as vacuum deposition and sputtering, and solution methods such as ink jet and nozzle coating are preferred.

因此，可以製造作為採用其中光從基板側輸出之所謂的「底部發射」的有機EL元件的顯示元件。在這種情況下，基板31、閘極絕緣層34、以及第二汲極(陽極)38需要是透明的。 Therefore, it is possible to manufacture a display element as an organic EL element in which so-called "bottom emission" in which light is output from the substrate side is employed. In this case, the substrate 31, the gate insulating layer 34, and the second drain (anode) 38 need to be transparent.

此外，圖5中所示之配置具有設置在驅動電路320旁邊的有機EL元件350。然而，如圖6所示，有機EL元件250可以設置在驅動電路320上或上方。同樣，該配置採用了從基板側輸出光的「底部發射」，這樣驅動電路320需要是透明的。對於源極、汲極以及陽極，較佳使用導電透明氧化物，例如ITO、In₂O₃、SnO₂、ZnO、Ga摻雜ZnO、Al摻雜ZnO以及Sb摻雜SnO₂。 Further, the configuration shown in FIG. 5 has an organic EL element 350 disposed beside the drive circuit 320. However, as shown in FIG. 6, the organic EL element 250 may be disposed on or above the driving circuit 320. Also, this configuration employs "bottom emission" of light output from the substrate side, so that the driving circuit 320 needs to be transparent. For the source, the drain and the anode, conductive transparent oxides such as ITO, In ₂ O ₃ , SnO ₂ , ZnO, Ga-doped ZnO, Al-doped ZnO, and Sb-doped SnO _{2 are} preferably used.

顯示控制裝置400包括例如影像資料處理電路402、掃描線驅動電路404、以及資料線驅動電路406，如第7圖所示。 The display control device 400 includes, for example, an image data processing circuit 402, a scanning line driving circuit 404, and a data line driving circuit 406 as shown in FIG.

影像資料處理電路402基於影像輸出的輸出訊號確定顯示器310中多個顯示元件302的亮度。 The image data processing circuit 402 determines the brightness of the plurality of display elements 302 in the display 310 based on the output signals of the image output.

掃描線驅動電路404根據影像資料處理電路402的指令對n條數量的掃描線施加單個電壓。 The scan line driver circuit 404 applies a single voltage to n number of scan lines in accordance with an instruction of the image data processing circuit 402.

資料線驅動電路406根據影像資料處理電路402的指令對m條數量的資料線施加單個電壓。 The data line drive circuit 406 applies a single voltage to the m number of data lines in accordance with an instruction of the image data processing circuit 402.

在本實施例中，有機EL薄膜層包括電子傳輸層、發光層、以及電洞傳輸層，但不限於此。例如，電子傳輸層和發光層不必分離，而是可以形成單層。另外，可以在電子傳輸層與陰極之間提供電子注入層。此外，可以在電洞傳輸層和陽極之間提供電洞注入層。 In the present embodiment, the organic EL thin film layer includes an electron transport layer, a light emitting layer, and a hole transport layer, but is not limited thereto. For example, the electron transport layer and the light-emitting layer do not have to be separated, but a single layer can be formed. In addition, an electron injection layer may be provided between the electron transport layer and the cathode. Further, a hole injection layer may be provided between the hole transport layer and the anode.

另外，在本實施例中，說明所謂從基板側輸出光的「底部發射」，但並不排除其他可能性。例如，可以使用由Ag-Nd合金形成的高反射率電極作為陽極314，以及由Mg和Ag的合金形成的半透明電極或者ITO形成的透明電極等作為陰極312，使光從基板的另一側輸出。 Further, in the present embodiment, the "bottom emission" of the light output from the substrate side will be described, but other possibilities are not excluded. For example, a high reflectance electrode formed of an Ag-Nd alloy may be used as the anode 314, and a translucent electrode formed of an alloy of Mg and Ag or a transparent electrode formed of ITO or the like may be used as the cathode 312 to allow light to pass from the other side of the substrate. Output.

另外，在本實施例中，對光控制元件為有機EL元件的情況進行了說明，但並不排除其他可能性。例如，光控制元件可以是電致變色元件。在這種情況下，顯示器310是電致變色顯示器。 Further, in the present embodiment, the case where the light control element is an organic EL element has been described, but other possibilities are not excluded. For example, the light control element can be an electrochromic element. In this case, display 310 is an electrochromic display.

另外，光控制元件可以是液晶元件。在這種情況下，顯示器310是液晶顯示器。例如，如圖8所示，顯示元件302'不需要電流供給線。 Additionally, the light control element can be a liquid crystal element. In this case, the display 310 is a liquid crystal display. For example, as shown in Figure 8, the display element 302' does not require a current supply line.

在這種情況下，如圖9所示，驅動電路320'可以由電容器15和類似於上述場效電晶體11和12的單個場效電晶體14構成。在場效電晶體14中，閘極G連接到預定的掃描線，源極S連接到預定的資料線。此外，汲極D連接到液晶元件370的像素電極和電容器15。 In this case, as shown in FIG. 9, the driving circuit 320' may be composed of a capacitor 15 and a single field effect transistor 14 similar to the field effect transistors 11 and 12 described above. In the field effect transistor 14, the gate G is connected to a predetermined scanning line, and the source S is connected to a predetermined data line. Further, the drain D is connected to the pixel electrode of the liquid crystal element 370 and the capacitor 15.

圖9同樣顯示出液晶元件370的對電極(共用電極)16和372。 Fig. 9 also shows the counter electrodes (common electrodes) 16 and 372 of the liquid crystal element 370.

在本實施例中，光控制元件可以是電泳元件。另外，光控制元件可以是電潤濕元件。 In this embodiment, the light control element can be an electrophoretic element. Additionally, the light management element can be an electrowetting element.

另外，在本實施例中，描述了支援彩色的顯示器，但並不排除其他可能性。 Further, in the present embodiment, a display supporting color is described, but other possibilities are not excluded.

本實施例的場效電晶體可以用於除了顯示元件之外的產品(例如，IC卡和ID標簽)。 The field effect transistor of the present embodiment can be used for products other than display elements (for example, an IC card and an ID tag).

使用本發明的場效電晶體的顯示元件、影像顯示裝置以及系統在高速操作運行下有著長使用壽命。 The display elements, image display devices, and systems using the field effect transistors of the present invention have a long service life under high speed operation.

已經大致描述了本發明的較佳實施例，可以透過參考本文提供的某些具體示例來獲得進一步的理解，這些示例僅用於說明的目的，而 不意在限制。在以下示例的描述中，除非另有說明，數字在一些地方表示重量比。 The preferred embodiments of the present invention have been generally described, and may be further understood by reference to the specific examples provided herein. Not intended to be limiting. In the description of the following examples, numbers indicate weight ratios in some places unless otherwise stated.

實施例 Example

接著，參考示例詳細說明本發明，但不限於此。百分比表示質量百分比，除非另有說明。 Next, the invention will be described in detail with reference to examples, but is not limited thereto. Percentage represents the percentage by mass unless otherwise stated.

示例1 Example 1

場效電晶體的製造 Manufacture of field effect transistors

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.16mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)和0.28mL的2-乙基己酸鎂的甲苯溶液(Strem 12-1260，鎂含量：3質量%，由Strem Chemicals,Inc.製造)與1mL的甲苯混合，得到閘極絕緣層塗佈液。由閘極絕緣層塗佈液形成的氧化物具有表1-1所示的成分。 0.16 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.) and 0.28 mL of a toluene solution of magnesium 2-ethylhexanoate (Strem 12-1260, magnesium content: 3% by mass, manufactured by Strem Chemicals, Inc.) was mixed with 1 mL of toluene to obtain a gate insulating layer coating liquid. The oxide formed from the gate insulating layer coating liquid has the components shown in Table 1-1.

製造圖10所示的下接觸下閘極的場效電晶體。 A field effect transistor of the lower contact lower gate shown in FIG. 10 was fabricated.

閘極的形成 Gate formation

首先，在玻璃基板(基板91)上形成閘極92。具體地，透過DC濺射在玻璃基板(基板91)上形成平均膜厚度為約100nm的鉬(Mo)膜。此後，光阻透過預烤、由曝光設備的曝光以及顯影，用於形成與閘極92相同圖案的光阻圖案。此外，透過反應離子蝕刻(RIE)去除位於沒有形成光阻圖案的區域中的Mo膜。然後，除去光阻圖案，形成由Mo膜製成的閘極92。 First, a gate 92 is formed on a glass substrate (substrate 91). Specifically, a molybdenum (Mo) film having an average film thickness of about 100 nm was formed on a glass substrate (substrate 91) by DC sputtering. Thereafter, the photoresist is passed through a pre-bake, exposure by an exposure apparatus, and development to form a photoresist pattern of the same pattern as the gate 92. Further, the Mo film in the region where the photoresist pattern is not formed is removed by reactive ion etching (RIE). Then, the photoresist pattern is removed to form a gate 92 made of a Mo film.

閘極絕緣層的形成 Formation of gate insulating layer

接著，將0.4mL的閘極絕緣層塗佈液滴到基板上，然後旋塗(以3,000rpm旋轉20秒，並在5秒鐘內停止旋轉)。然後，在大氣環境中於120℃下進行1小時的蒸發處理後，在O₂環境中，將所得之物在400℃下烘烤3小時形成氧化膜作為閘極絕緣層93。閘極絕緣層的平均厚度大約是300nm。 Next, 0.4 mL of the gate insulating layer was applied onto the substrate, followed by spin coating (rotation at 3,000 rpm for 20 seconds, and rotation was stopped within 5 seconds). Then, after evaporating at 120 ° C for 1 hour in an atmospheric environment, the obtained material was baked at 400 ° C for 3 hours in an O ₂ atmosphere to form an oxide film as the gate insulating layer 93. The average thickness of the gate insulating layer is approximately 300 nm.

源極和汲極的形成 Source and bungee formation

接著，在閘極絕緣層93上形成源極94和汲極95。 Next, a source electrode 94 and a drain electrode 95 are formed on the gate insulating layer 93.

具體地，透過DC濺射在閘極絕緣層93上形成平均膜厚度大約100nm的鉬(Mo)膜。之後，光阻透過預烤、由曝光設備的曝光以及顯影，用於在Mo膜上形成與源極94和汲極95相同圖案的光阻圖案。此外，透過反應離子蝕刻(RIE)去除位於沒有形成光阻圖案的區域中的Mo膜。然後，除去光阻圖案以形成由Mo膜製成的源極94和汲極95。 Specifically, a molybdenum (Mo) film having an average film thickness of about 100 nm is formed on the gate insulating layer 93 by DC sputtering. Thereafter, the photoresist is passed through prebaking, exposure by an exposure apparatus, and development for forming a photoresist pattern of the same pattern as the source 94 and the drain 95 on the Mo film. Further, the Mo film in the region where the photoresist pattern is not formed is removed by reactive ion etching (RIE). Then, the photoresist pattern is removed to form a source 94 and a drain 95 made of a Mo film.

氧化物半導體層的形成 Formation of an oxide semiconductor layer

接著，形成氧化物半導體層96。具體地，透過DC濺射形成平均膜厚度大約100nm的Mg-In基氧化物(In₂MgO₄)膜。 Next, an oxide semiconductor layer 96 is formed. Specifically, a Mg-In-based oxide (In ₂ MgO ₄ ) film having an average film thickness of about 100 nm was formed by DC sputtering.

之後，光阻透過預烤、由曝光設備的曝光以及顯影，用於在Mg-In基氧化物膜上以形成與氧化物半導體層96相同圖案的光阻圖案。此外，透過濕法蝕刻去除位於未形成光阻圖案的區域中的Mg-In基氧化物膜。此後，同樣去除光阻圖案以形成氧化物半導體層96。因此，以在源極94與汲極95之間形成通道的方式形成氧化物半導體層96。 Thereafter, the photoresist is passed through prebaking, exposure by an exposure apparatus, and development for forming a photoresist pattern on the Mg-In based oxide film in the same pattern as the oxide semiconductor layer 96. Further, the Mg-In based oxide film located in the region where the photoresist pattern is not formed is removed by wet etching. Thereafter, the photoresist pattern is also removed to form the oxide semiconductor layer 96. Therefore, the oxide semiconductor layer 96 is formed in such a manner that a channel is formed between the source electrode 94 and the drain electrode 95.

然後，作為後處理，透過在300℃下加熱1小時以獲得場效電晶體。 Then, as a post-treatment, a field effect transistor was obtained by heating at 300 ° C for 1 hour.

用於測量線性膨脹係數之具有類圓柱狀的物體的製造 Manufacture of cylindrical objects for measuring linear expansion coefficients

準備1L的示例1的閘極絕緣層塗佈液，並除去溶劑。然後，將所得之物放入鉑坩堝中，加熱至1600℃進行熔融。然後，透過懸浮方法(floating method)製造具有直徑5mm，高度10mm的圓柱狀物體。 1 L of the gate insulating layer coating liquid of Example 1 was prepared, and the solvent was removed. Then, the obtained product was placed in a platinum crucible, and heated to 1600 ° C to be melted. Then, a cylindrical object having a diameter of 5 mm and a height of 10 mm was produced by a floating method.

用於評估相對介電常數的電容器的製造 Fabrication of capacitors for evaluating relative dielectric constants

接著，製造具有圖11中所示結構的電容器。 Next, a capacitor having the structure shown in Fig. 11 was fabricated.

具體地，使用在形成有底部電極102的區域中具有開孔的金屬遮罩，透過真空氣相沉積在玻璃基板(基板101)上形成鋁(Al)膜，以獲得大約100nm的平均膜厚度。接著，根據示例1中形成場效電晶體的閘極絕緣層中所述的方法，形成具有平均膜厚度大約300nm的絕緣薄膜103。然後，使用在形成有上部電極104的區域中具有開孔的金屬遮罩，透過真空氣相沉積形成具有平均膜厚度大約100nm的鋁(Al)膜，以完成電容器的製造。 Specifically, an aluminum (Al) film was formed on the glass substrate (substrate 101) by vacuum vapor deposition using a metal mask having an opening in a region where the bottom electrode 102 was formed, to obtain an average film thickness of about 100 nm. Next, an insulating film 103 having an average film thickness of about 300 nm was formed according to the method described in the gate insulating layer for forming a field effect transistor in Example 1. Then, an aluminum (Al) film having an average film thickness of about 100 nm was formed by vacuum vapor deposition using a metal mask having openings in a region where the upper electrode 104 was formed to complete the fabrication of the capacitor.

示例2 Example 2

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.13mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO,.LTD.製造)和0.47mL的2-乙基己酸鈣的2-乙基己酸溶液(Alfa 36657，鈣含量：3~8質量%，由Alfa Aesar製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。由閘極絕緣層塗佈液形成的氧化物具有表1-1所示的成分。 0.13 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO,. LTD.) and 0.47 mL of calcium 2-ethylhexanoate 2- An ethylhexanoic acid solution (Alfa 36657, calcium content: 3 to 8 mass%, manufactured by Alfa Aesar) was mixed with 1 mL of toluene to obtain a gate insulating layer coating liquid. The oxide formed from the gate insulating layer coating liquid has the components shown in Table 1-1.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例3 Example 3

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.14mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)，0.24mL的2-乙基己酸鎂的甲苯溶液(Strem 12-1260，鎂含量：3質量%，由Strem Chemicals,Inc.製造)和0.95mL的2-乙基己酸鍶的甲苯溶液(Wako 195-09561，Sr含量：2質量%，由WAKO CHEMICAL,LTD.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。由閘極絕緣層塗佈液形成的氧化物具有表1-1所示的成分。 0.14 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.24 mL of a toluene solution of magnesium 2-ethylhexanoate (Strem 12-1260, magnesium content: 3% by mass, manufactured by Strem Chemicals, Inc.) and 0.95 mL of a toluene solution of bismuth 2-ethylhexanoate (Wako 195-09561, Sr content: 2% by mass, by WAKO) (manufactured by CHEMICAL, LTD.) was mixed with 1 mL of toluene to obtain a gate insulating layer coating liquid. The oxide formed from the gate insulating layer coating liquid has the components shown in Table 1-1.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例4 Example 4

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.17mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)、0.08mL的2-乙基己酸鈣的2-乙基己酸溶液(Alfa 36657，鈣含量：3~8質量%，由Alfa Aesar製造)以及0.19mL的2-乙基己酸鋇的甲苯溶液(Wako 021-09471，Ba含量：8質量%，由WAKO CHEMICAL,LTD.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。由閘極絕緣層塗佈液形成的氧化物具有表1-1所示的成分。 0.17 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.08 mL of calcium 2-ethylhexanoate 2- Ethylhexanoic acid solution (Alfa 36657, calcium content: 3 to 8 mass%, manufactured by Alfa Aesar) and 0.19 mL of a toluene solution of bismuth 2-ethylhexanoate (Wako 021-09471, Ba content: 8 mass%, manufactured by WAKO CHEMICAL, LTD. ) was mixed with 1 mL of toluene to obtain a gate insulating layer coating liquid. The oxide formed from the gate insulating layer coating liquid has the components shown in Table 1-1.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例5 Example 5

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.13mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)、0.16mL的2-乙基己酸鈣的2-乙基己酸溶液(Alfa 36657，鈣含量：3~8質量%，由Alfa Aesar製造)、0.83mL的2-乙基己酸鍶的甲苯溶液(Wako 195-09561，Sr含量：2質量%，由WAKO CHEMICAL,LTD.製造)以及0.38mL的2-乙基己酸鋇的甲苯溶液(Wako 021-09471，Ba含量：8質量%，由WAKO CHEMICAL,LTD.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。 0.13 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.16 mL of calcium 2-ethylhexanoate 2- Ethylhexanoic acid solution (Alfa 36657, calcium content: 3 to 8 mass%, manufactured by Alfa Aesar), 0.83 mL of a toluene solution of bismuth 2-ethylhexanoate (Wako 195-09561, Sr content: 2% by mass, (manufactured by WAKO CHEMICAL, LTD.) and 0.38 mL of a toluene solution of bismuth 2-ethylhexanoate (Wako 021-09471, Ba content: 8 mass%, manufactured by WAKO CHEMICAL, LTD.) mixed with 1 mL of toluene to A gate insulating layer coating liquid is obtained.

由閘極絕緣層塗佈液形成的氧化物具有表1-1所示的成分。 The oxide formed from the gate insulating layer coating liquid has the components shown in Table 1-1.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例6 Example 6

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.14mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)、0.06mL的二(二級丁氧基)乙醯乙酸鋁螯合物(Alfa 89349，Al含量：8.4%，由Alfa Aesar製造)以及0.51mL的2-乙基己 酸鋇的甲苯溶液(Wako 021-09471，Ba含量：8質量%，由WAKO CHEMICAL,LTD.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。 0.14 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.06 mL of di(2-butoxy)acetamidine Aluminum acetate chelate (Alfa 89349, Al content: 8.4%, manufactured by Alfa Aesar) and 0.51 mL of 2-ethylhexyl A toluene solution of toluic acid (Wako 021-09471, Ba content: 8 mass%, manufactured by WAKO CHEMICAL, LTD.) was mixed with 1 mL of toluene to obtain a gate insulating layer coating liquid.

由閘極絕緣層塗佈液形成的氧化物具有表1-2所示的成分。 The oxide formed from the gate insulating layer coating liquid has the components shown in Table 1-2.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例7 Example 7

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.15mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)、0.06g的(4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊烷-2-基)苯(Wako 325-59912，由WAKO CHEMICAL,LTD.製造)、0.07mL的2-乙基己酸鎂的甲苯溶液(Strem 12-1260，鎂含量：3質量%，由Strem Chemicals,Inc.製造)以及0.23mL的2-乙基己酸鍶的甲苯溶液(Wako 195-09561，Sr含量：2質量%，由WAKO CHEMICAL,LTD.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。 0.15 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.06 g (4, 4, 5, 5 - 4) Methyl-1,3,2-dioxaborolan-2-yl)benzene (Wako 325-59912, manufactured by WAKO CHEMICAL, LTD.), 0.07 mL of toluene of magnesium 2-ethylhexanoate Solution (Strem 12-1260, magnesium content: 3% by mass, manufactured by Strem Chemicals, Inc.) and 0.23 mL of a toluene solution of bismuth 2-ethylhexanoate (Wako 195-09561, Sr content: 2% by mass, WAKO CHEMICAL, LTD.) was mixed with 1 mL of toluene to obtain a gate insulating layer coating liquid.

由閘極絕緣層塗佈液形成的氧化物具有表1-2所示的成分。 The oxide formed from the gate insulating layer coating liquid has the components shown in Table 1-2.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例8 Example 8

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.13mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)、0.08mL的二(二級丁氧基)乙醯乙酸鋁螯合物(Alfa 89349，Al含量：8.4%，由Alfa Aesar製造)、0.13mL的2-乙基草酸 鈣的2-乙基己酸溶液(Alfa 36657，Ca含量：3~8質量%，由Alfa Aesar製造)以及0.64mL的2-乙基己酸鍶的甲苯溶液(Wako 195-09561，Sr含量：2質量%，由WAKO CHEMICAL,LTD.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。 0.13 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.08 mL of di(2-butoxy)acetamidine Aluminum acetate chelate (Alfa 89349, Al content: 8.4%, manufactured by Alfa Aesar), 0.13 mL of 2-ethyl oxalic acid Calcium 2-ethylhexanoic acid solution (Alfa 36657, Ca content: 3 to 8 mass%, manufactured by Alfa Aesar) and 0.64 mL of toluene solution of bismuth 2-ethylhexanoate (Wako 195-09561, Sr content: 2% by mass, manufactured by WAKO CHEMICAL, LTD.), was mixed with 1 mL of toluene to obtain a gate insulating layer coating liquid.

由閘極絕緣層塗佈液形成的氧化物具有表1-2所示的成分。 The oxide formed from the gate insulating layer coating liquid has the components shown in Table 1-2.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例9 Example 9

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體，以及用於評估相對介電常數的電容器的製造 Field effect transistor, cylindrical object for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.11mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)、0.12g的(4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊烷-2-基)苯(Wako 325-59912，由WAKO CHEMICAL,LTD.製造)以及0.18mL的2-乙基己酸鎂的甲苯溶液(Strem 12-1260，鎂含量：3質量%，由Strem Chemicals,Inc.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。 0.11 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.12 g (4, 4, 5, 5 - 4) Methyl-1,3,2-dioxaborolan-2-yl)benzene (Wako 325-59912, manufactured by WAKO CHEMICAL, LTD.) and 0.18 mL of toluene of 2-ethylhexanoate A solution (Strem 12-1260, magnesium content: 3% by mass, manufactured by Strem Chemicals, Inc.) was mixed with 1 mL of toluene to obtain a gate insulating layer coating liquid.

由閘極絕緣層塗佈液形成的氧化物具有表1-2所示的成分。 The oxide formed from the gate insulating layer coating liquid has the components shown in Table 1-2.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例10 Example 10

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.13mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)、0.06mL的二(二級丁氧基)乙醯乙酸鋁螯合物(Alfa 89349，Al含量：8.4%，由Alfa Aesar製造)、0.07g的(4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊烷-2-基)苯(Wako 325-59912，由WAKO CHEMICAL,LTD.製造)、0.07mL的2-乙基己酸鈣的2-乙基己酸溶液(Alfa 36657，Ca含量：3~8質量%，由Alfa Aesar製造)以及0.14mL的2-乙基己酸鍶的甲苯溶液(Wako 195-09561，Sr含量：2質量%，由WAKO CHEMICAL,LTD.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。 0.13 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.06 mL of di(2-butoxy)acetamidine Aluminum acetate chelate (Alfa 89349, Al content: 8.4%, manufactured by Alfa Aesar), 0.07 g (4,4,5,5-tetramethyl-1,3,2-dioxaborolan) Alkan-2-yl)benzene (Wako 325-59912, by WAKO (manufactured by CHEMICAL, LTD.), 0.07 mL of 2-ethylhexanoic acid in 2-ethylhexanoic acid (Alfa 36657, Ca content: 3 to 8 mass%, manufactured by Alfa Aesar) and 0.14 mL of 2-B A toluene solution of bismuth hexanoate (Wako 195-09561, Sr content: 2% by mass, manufactured by WAKO CHEMICAL, LTD.) was mixed with 1 mL of toluene to obtain a gate insulating layer coating liquid.

由閘極絕緣層塗佈液形成的氧化物具有表1-2所示的成分。 The oxide formed from the gate insulating layer coating liquid has the components shown in Table 1-2.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例11 Example 11

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.14mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)、0.07mL的二(二級丁氧基)乙醯乙酸鋁(Alfa 89349，Al含量：8.4%，由Alfa Aesar製造)、0.02g的(4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊烷-2-基)苯(Wako 325-59912，由WAKO CHEMICAL,LTD.製造)、以及0.11 mL的2-乙基己酸鎂的甲苯溶液(Strem 12-1260，鎂含量：3質量%，由Strem Chemicals,Inc.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。 0.14 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.07 mL of di(2-butoxy)acetamidine Aluminum acetate (Alfa 89349, Al content: 8.4%, manufactured by Alfa Aesar), 0.02 g of (4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2 -yl)benzene (Wako 325-59912, manufactured by WAKO CHEMICAL, LTD.), and 0.11 mL of a toluene solution of magnesium 2-ethylhexanoate (Strem 12-1260, magnesium content: 3% by mass, from Strem Chemicals, Inc. manufactured by mixing with 1 mL of toluene to obtain a gate insulating layer coating liquid.

由閘極絕緣層塗佈液形成的氧化物具有表1-3所示的成分。 The oxide formed from the gate insulating layer coating liquid has the compositions shown in Tables 1-3.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例12 Example 12

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.11mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)、0.06mL的二(二級丁氧基)乙醯乙酸鋁螯合物(Alfa 89349，Al含量：8.4%，由Alfa Aesar製造)、0.07g的(4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊烷-2-基)苯(Wako 325-59912，由WAKO CHEMICAL,LTD.製造)、0.03mL的2-乙基己酸鈣的2-乙基己酸溶液(Alfa 36657，Ca含量：3~8質量%，由Alfa Aesar製造)以及0.48mL的2-乙基己酸鋇的甲苯溶液(Wako 021-09471，Ba含量：8質量%，由WAKO CHEMICAL,LTD.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。 0.11 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.06 mL of di(2-butoxy)acetamidine Aluminum acetate chelate (Alfa 89349, Al content: 8.4%, manufactured by Alfa Aesar), 0.07 g (4,4,5,5-tetramethyl-1,3,2-dioxaborolan) Alkan-2-yl)benzene (Wako 325-59912, manufactured by WAKO CHEMICAL, LTD.), 0.03 mL of 2-ethylhexanoic acid solution of calcium 2-ethylhexanoate (Alfa 36657, Ca content: 3-8) (% by mass, manufactured by Alfa Aesar) and 0.48 mL of a toluene solution of bismuth 2-ethylhexanoate (Wako 021-09471, Ba content: 8 mass%, manufactured by WAKO CHEMICAL, LTD.) mixed with 1 mL of toluene to A gate insulating layer coating liquid is obtained.

由閘極絕緣層塗佈液形成的氧化物具有表1-3所示的成分。 The oxide formed from the gate insulating layer coating liquid has the compositions shown in Tables 1-3.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

示例13 Example 13

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

0.11mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)、0.10mL的二(二級丁氧基)乙醯乙酸鋁螯合物(Alfa 89349，Al含量：8.4%，由Alfa Aesar製造)、0.07g的(4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊烷-2-基)苯(Wako 325-59912，由WAKO CHEMICAL,LTD.製造)、0.09mL的2-乙基己酸鈣的2-乙基己酸溶液(Alfa 36657，Ca含量：3~8質量%，由Alfa Aesar製造)以及0.19mL的2-乙基己酸鍶的甲苯溶液(Wako 195-09561，Sr含量：2質量%，由WAKO CHEMICAL,LTD.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。 0.11 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.), 0.10 mL of di(2-butoxy)acetamidine Aluminum acetate chelate (Alfa 89349, Al content: 8.4%, manufactured by Alfa Aesar), 0.07 g (4,4,5,5-tetramethyl-1,3,2-dioxaborolan) Alkan-2-yl)benzene (Wako 325-59912, manufactured by WAKO CHEMICAL, LTD.), 0.09 mL of 2-ethylhexanoic acid 2-ethylhexanoic acid solution (Alfa 36657, Ca content: 3-8) (% by mass, manufactured by Alfa Aesar) and 0.19 mL of a toluene solution of bismuth 2-ethylhexanoate (Wako 195-09561, Sr content: 2% by mass, manufactured by WAKO CHEMICAL, LTD.) mixed with 1 mL of toluene to A gate insulating layer coating liquid is obtained.

由閘極絕緣層塗佈液形成的氧化物具有表1-3所示的成分。 The oxide formed from the gate insulating layer coating liquid has the compositions shown in Tables 1-3.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

比較示例1 Comparison example 1

場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器的製造 Field effect transistor, object with a cylindrical shape for measuring linear expansion coefficient, and capacitor for evaluating relative dielectric constant

閘極絕緣層塗佈液的製造 Manufacture of gate insulating layer coating liquid

將0.19mL的HMDS(1,1,1,3,3,3-六甲基二矽氮烷，由TOKYO OHKA KOGYO CO.,LTD.製造)與1mL的甲苯混合，以獲得閘極絕緣層塗佈液。 0.19 mL of HMDS (1,1,1,3,3,3-hexamethyldioxane, manufactured by TOKYO OHKA KOGYO CO., LTD.) was mixed with 1 mL of toluene to obtain a gate insulating layer coating. Cloth liquid.

由閘極絕緣層塗佈液形成的氧化物具有表1-3所示的成分。 The oxide formed from the gate insulating layer coating liquid has the compositions shown in Tables 1-3.

使用準備的閘極絕緣層塗佈液，根據與示例1相同的方法製造場效電晶體、用於測量線性膨脹係數之具有類圓柱狀的物體、以及用於評估相對介電常數的電容器。 Using the prepared gate insulating layer coating liquid, a field effect transistor, an object having a columnar shape for measuring a linear expansion coefficient, and a capacitor for evaluating a relative dielectric constant were fabricated according to the same method as in Example 1.

比較示例2 Comparison example 2

場效電晶體的製造 Manufacture of field effect transistors

以與示例1相同的方式在玻璃基板上製造閘極。形成閘極絕緣層 A gate was fabricated on a glass substrate in the same manner as in Example 1. Forming a gate insulating layer

接著，使用SiCl₄作為原料，根據電漿增強化學氣相沉積(PECVD)方法在上述基板和閘極絕緣層上形成作為閘極絕緣層的SiO₂層。閘極絕緣層的平均厚度大約為300nm。 Next, using SiCl ₄ as a raw material, an SiO ₂ layer as a gate insulating layer was formed on the above substrate and gate insulating layer in accordance with a plasma enhanced chemical vapor deposition (PECVD) method. The gate insulating layer has an average thickness of about 300 nm.

接著，按照示例1的方法，形成源極、汲極、以及氧化物半導體層，接著進行加熱製程以完成場效電晶體。 Next, a source, a drain, and an oxide semiconductor layer were formed in accordance with the method of Example 1, followed by a heating process to complete the field effect transistor.

用於測量線性膨脹係數之具有類圓柱狀的物體的製造 Manufacture of cylindrical objects for measuring linear expansion coefficients

作為原料的SiCl₄在氫氧焰中進行水解以獲得二氧化矽粉末。使由此獲得的二氧化矽粉末生長以獲得SiO₂多孔固體。然後，將SiO₂多孔固體放入鉑坩堝中，在1600℃下加熱熔融。然後，透過懸浮方法製造具有直徑為5mm、高度為10mm的圓柱狀物體。 As a raw material, SiCl ₄ is hydrolyzed in an oxyhydrogen flame to obtain a cerium oxide powder. The cerium oxide powder thus obtained was grown to obtain a SiO ₂ porous solid. Then, the porous solid of SiO _{2 was} placed in a platinum crucible and heated and melted at 1600 °C. Then, a cylindrical object having a diameter of 5 mm and a height of 10 mm was produced by a suspension method.

用於評估相對介電常數的電容器的製造 Fabrication of capacitors for evaluating relative dielectric constants

按照與示例1相同的方式，使用在形成有底部電極102的區域中具有開孔的金屬遮罩，透過真空氣相沉積在玻璃基板(基板101)上形成鋁(Al)膜，以獲得大約100nm的平均膜厚度。 In the same manner as in Example 1, an aluminum (Al) film was formed on the glass substrate (substrate 101) by vacuum vapor deposition using a metal mask having an opening in a region where the bottom electrode 102 was formed to obtain about 100 nm. Average film thickness.

接著，使用SiCl₄作為原料，根據電漿增強化學氣相沉積(PECVD)方法形成絕緣薄膜103。 Next, using SiCl ₄ as a raw material, the insulating film 103 is formed according to a plasma enhanced chemical vapor deposition (PECVD) method.

然後，使用在形成有上部電極104的區域中具有開孔的金屬遮罩，透過真空氣相沉積形成具有平均膜厚度大約100nm的鋁(Al)膜，以完成製造電容器。 Then, an aluminum (Al) film having an average film thickness of about 100 nm was formed by vacuum vapor deposition using a metal mask having openings in a region where the upper electrode 104 was formed, to complete fabrication of the capacitor.

場效電晶體的剝離的評估 Evaluation of stripping of field effect transistors

評估在示例1~13和比較示例1和2中所製造的場效電晶體的外觀，結果顯示於表2中。如表2所示，關於在示例1~13中所製造的場效電晶體，沒有觀察到閘極、閘極絕緣層、源極、汲極以及半導體層的剝離。 The appearance of the field effect transistors fabricated in Examples 1 to 13 and Comparative Examples 1 and 2 was evaluated, and the results are shown in Table 2. As shown in Table 2, regarding the field effect transistors manufactured in Examples 1 to 13, no peeling of the gate, the gate insulating layer, the source, the drain, and the semiconductor layer was observed.

另一方面，對於在比較示例1和2中所製造的場效電晶體，在閘極和閘極絕緣層之間發生剝離。 On the other hand, for the field effect transistors fabricated in Comparative Examples 1 and 2, peeling occurred between the gate and the gate insulating layer.

線性膨脹係數的評估 Evaluation of linear expansion coefficient

透過熱機械分析儀(8310系列，由Rigaku Corporation製造)在20~300℃的溫度範圍內測量示例1~13和比較示例1和2之具有類圓柱狀的物體的平均線性膨脹係數。示例1~13和比較示例1~2的結果示於表2。 The average linear expansion coefficients of the cylindrical objects of Examples 1 to 13 and Comparative Examples 1 and 2 were measured by a thermomechanical analyzer (8310 series, manufactured by Rigaku Corporation) in a temperature range of 20 to 300 °C. The results of Examples 1 to 13 and Comparative Examples 1 and 2 are shown in Table 2.

如表2所示，儘管示例1~13中所製造之具有類圓柱狀的物體的線性膨脹係數為21.7×10^-7~77.9×10^-7/K，但是在比較示例1和2中所製造之具有類圓柱狀的物體的線性膨脹係數很小，即5.2×10^-7~5.4×10^-7/K。 As shown in Table 2, although the cylindrical expansion-like objects manufactured in Examples 1 to 13 have a linear expansion coefficient of 21.7 × 10 ^-7 to 77.9 × 10 ^-7 /K, they were produced in Comparative Examples 1 and 2. The linear expansion coefficient of a cylindrical object is small, that is, 5.2 × 10 ^-7 ~ 5.4 × 10 ^-7 /K.

在場效電晶體的剝離的評估中比較示例1和2的場效電晶體中剝離的原因是在加熱製程期間發生熱應力，由於閘極絕緣層的線膨脹係數為5.2×10^-7~5.4×10^-7/K，其與閘極、源極以及汲極的線膨脹係數相比較而言非常小。另一方面，關於示例1~13的場效電晶體，因為閘極絕緣層的線性膨脹係數與閘極、源極以及汲極的線性膨脹係數之間的差異小，所以沒有發生剝離。 The reason why the peeling in the field effect transistor of Examples 1 and 2 was compared in the evaluation of the peeling of the field effect transistor was that thermal stress occurred during the heating process because the linear expansion coefficient of the gate insulating layer was 5.2 × 10 ^-7 ~ 5.4. ×10 ^-7 /K, which is very small compared to the linear expansion coefficients of the gate, source and drain. On the other hand, regarding the field effect transistors of Examples 1 to 13, since the difference between the linear expansion coefficient of the gate insulating layer and the linear expansion coefficient of the gate, the source, and the drain was small, peeling did not occur.

相對介電常數評估 Relative dielectric constant evaluation

透過LCR計(4284A，由Agilent Technologies製造)測量在示例1~13和比較示例1和2中所製造的電容器的容量。透過在1kHz的頻率下測量的容量和介電損耗(tanδ)的值所計算的相對介電常數ε顯示在表2中。 The capacities of the capacitors fabricated in Examples 1 to 13 and Comparative Examples 1 and 2 were measured by an LCR meter (4284A, manufactured by Agilent Technologies). The relative dielectric constant ε calculated by the value of the capacity and dielectric loss (tan δ) measured at a frequency of 1 kHz is shown in Table 2.

圖12是顯示示例13中之相對介電常數ε和介電損耗(tanδ)與施加電場的頻率之間的關係的圖式。根據圖12，證實了在示例13中所製造的電容器在100Hz~1MHz的範圍內具有5.1~5.3的相對介電常數。 Fig. 12 is a graph showing the relationship between the relative dielectric constant ε and the dielectric loss (tan δ) in Example 13 and the frequency of the applied electric field. According to Fig. 12, it was confirmed that the capacitor fabricated in Example 13 had a relative dielectric constant of 5.1 to 5.3 in the range of 100 Hz to 1 MHz.

此外，證實了介電損耗(tanδ)的值很小，在100Hz~100kHz的範圍內不大於約1%。 Further, it was confirmed that the value of the dielectric loss (tan δ) was small, and was not more than about 1% in the range of 100 Hz to 100 kHz.

圖13是顯示比較示例1中之相對介電常數ε和介電損耗(tanδ)與施加電場的頻率之間的關係的圖式。根據圖13，證實了在比較示例1中所製造的電容器在100Hz~1MHz的範圍內具有3.9~4.0的相對介電常數。此外，證實了介電損耗(tanδ)的值很小，在100Hz~100kHz的範圍內不大於約1%。 Fig. 13 is a graph showing the relationship between the relative dielectric constant ε and the dielectric loss (tan δ) in Comparative Example 1 and the frequency of the applied electric field. According to Fig. 13, it was confirmed that the capacitor fabricated in Comparative Example 1 had a relative dielectric constant of 3.9 to 4.0 in the range of 100 Hz to 1 MHz. Further, it was confirmed that the value of the dielectric loss (tan δ) was small, and was not more than about 1% in the range of 100 Hz to 100 kHz.

場效電晶體的電晶體特性的評估 Evaluation of the transistor characteristics of field effect transistors

透過半導體器件參數分析器(B1500A，由Agilent Technologies製造)評估在示例1~13和比較示例1和2中所製造的場效電晶體的電晶體特性。作為電晶體特性，當汲極95和源極94之間的電壓(Vds)設置為+20V時，測量閘極92和源極94之間的電壓(Vgs)與汲極95和源極94之間的電流(Ids)之間的關係(Vgs-Ids)。 The transistor characteristics of the field effect transistors fabricated in Examples 1 to 13 and Comparative Examples 1 and 2 were evaluated by a semiconductor device parameter analyzer (B1500A, manufactured by Agilent Technologies). As the transistor characteristics, when the voltage (Vds) between the drain 95 and the source 94 is set to +20 V, the voltage (Vgs) between the gate 92 and the source 94 and the drain 95 and the source 94 are measured. The relationship between the currents (Ids) (Vgs-Ids).

此外，根據電晶體特性(Vgs-Ids)的評估結果計算飽和區中的場效遷移率。另外，計算電晶體的接通狀態(例如，Vgs=+10V)和切斷狀態(例如，Vgs=-10V)的Ids的比率(開/關比)。 Further, the field effect mobility in the saturation region was calculated from the evaluation results of the transistor characteristics (Vgs-Ids). In addition, the ratio (on/off ratio) of the Ids of the on state (for example, Vgs=+10 V) of the transistor and the off state (for example, Vgs=−10 V) is calculated.

此外，計算次臨界擺幅(SS)作為Ids對於施加Vgs而上升的敏銳指數。另外，計算臨界電壓(Vth)作為Ids對於施加Vgs而上升的電壓值。 In addition, the sub-critical swing (SS) is calculated as the sharpness index of the rise of Ids for the application of Vgs. In addition, the threshold voltage (Vth) is calculated as a voltage value at which Ids rises for applying Vgs.

圖14是顯示示例13中所製造的場效電晶體的電晶體特性(Vgs-Ids)的結果的圖式。另外，根據在示例1~13和比較示例1和2中所製造的場效電晶體的電晶體特性所計算的遷移率、開/關比、次臨界擺動(SS)以及Vth顯示在表2中。以下，在電晶體特性的結果中當遷移率高、開/關比高、次臨界擺幅(SS)低、Vth為0V左右時，電晶體特性被評估為優異。 14 is a graph showing the results of the transistor characteristics (Vgs-Ids) of the field effect transistor fabricated in Example 13. In addition, the mobility, on/off ratio, subcritical swing (SS), and Vth calculated according to the transistor characteristics of the field effect transistors fabricated in Examples 1 to 13 and Comparative Examples 1 and 2 are shown in Table 2. . Hereinafter, in the results of the transistor characteristics, when the mobility is high, the on/off ratio is high, the subcritical swing (SS) is low, and Vth is about 0 V, the transistor characteristics are evaluated to be excellent.

圖14的曲線圖中Y軸的「e」表示「10的指數」。例如，「1e-3」表示1.0×10^-3或0.001，「1e+5」表示1.0×10⁺⁵或100,000。 The "e" of the Y-axis in the graph of Fig. 14 indicates "index of 10". For example, "1e-3" means 1.0 × 10 ^-3 or 0.001, and "1e + 5" means 1.0 × 10 ^{+ 5} or 100,000.

如圖14和表2所示，示例13中所製造的場效電晶體具有優異的電晶體特性。類似地，如表2所示，在示例1~13中所製造的每個場效電晶體具有優良的電晶體特性。 As shown in FIG. 14 and Table 2, the field effect transistor fabricated in Example 13 had excellent transistor characteristics. Similarly, as shown in Table 2, each field effect transistor manufactured in Examples 1 to 13 had excellent transistor characteristics.

另一方面，由於比較示例1和2中所製造的場效電晶體發生剝離，因此不可能評估電晶體特性。 On the other hand, since the field effect transistors manufactured in Comparative Examples 1 and 2 were peeled off, it was impossible to evaluate the transistor characteristics.

結果的表 Result table

本發明的實施例舉例如下。 Examples of the invention are as follows.

1.一種場效電晶體，包括一閘極，配置為施加閘極電壓；一源極和一汲極，配置為輸出電流；一半導體層，設置為靠近該源極和該汲極；以及一閘極絕緣層，設置在該閘極與該半導體層之間，其中該閘極絕緣層包括含有矽和一種或兩種或更多種鹼土金屬元素的一氧化物。 A field effect transistor comprising a gate configured to apply a gate voltage; a source and a drain configured to output current; a semiconductor layer disposed adjacent to the source and the drain; and a A gate insulating layer is disposed between the gate and the semiconductor layer, wherein the gate insulating layer comprises an oxide containing germanium and one or two or more alkaline earth metal elements.

2.根據上述1所述的場效電晶體，其中該氧化物包括鋁及/或硼。 2. The field effect transistor according to above 1, wherein the oxide comprises aluminum and/or boron.

3.根據上述1或2所述的場效電晶體，其中該半導體層是一氧化物半導體。 3. The field effect transistor according to 1 or 2 above, wherein the semiconductor layer is an oxide semiconductor.

4.一種顯示元件，包括一光控制元件，根據一驅動訊號控制光輸出；以及一驅動電路，包括根據上述1~3中任一項所述的場效電晶體並且配置為驅動該光控制元件。 A display element comprising a light control element for controlling light output according to a driving signal; and a driving circuit comprising the field effect transistor according to any one of the above 1 to 3 and configured to drive the light control element .

5.根據上述4所述的顯示元件，其中該光控制元件包括一電激發光元件、一電致變色元件、一液晶元件、一電泳元件以及一電潤濕元件。 5. The display element according to the above 4, wherein the light control element comprises an electroluminescent element, an electrochromic element, a liquid crystal element, an electrophoretic element and an electrowetting element.

6.一種影像顯示裝置，包括複數個顯示元件，設置為一矩陣形式，該複數個顯示元件中的每一個是根據上述4所述的顯示元件；複數條線路，單獨地將閘極電壓和訊號電壓施加到該複數個顯示元件中的該等場效電晶體；以及一顯示控制裝置，根據影像資料經由該複數條線路單獨地控制該等場效電晶體的閘極電壓和訊號電壓。 6. An image display device comprising a plurality of display elements arranged in a matrix form, each of the plurality of display elements being a display element according to the above 4; a plurality of lines, individually gate voltages and signals And applying voltage to the field effect transistors in the plurality of display elements; and a display control device for individually controlling gate voltages and signal voltages of the field effect transistors via the plurality of lines according to the image data.

7.一種系統，包括根據上述6所述的影像顯示裝置；以及一影像資料產生裝置，基於要顯示的影像資訊產生影像資料並將該影像資料輸出到該影像顯示裝置。 A system comprising the image display device according to the above 6, and an image data generating device that generates image data based on the image information to be displayed and outputs the image data to the image display device.

8.一種用於場效電晶體的閘極絕緣體(例如閘極絕緣膜)的組合物，包括含有矽和一種或兩種或更多種鹼土金屬元素的一氧化物。 8. A composition for a gate insulator (e.g., a gate insulating film) for a field effect transistor, comprising a monooxide comprising cerium and one or two or more alkaline earth metal elements.

如上所述，本發明的場效電晶體沒有因為加熱製程而在閘極、源極和汲極與閘極絕緣層之間剝離。 As described above, the field effect transistor of the present invention is not peeled off between the gate, the source and the drain and the gate insulating layer due to the heating process.

現在已經完全描述了本發明的實施例，對於本領域普通技術人員顯而易見的是，在不脫離本文所闡述的本發明的實施例的精神和範圍的情況下，可以對其進行許多變化和修改。 The embodiments of the present invention have been fully described, and it will be apparent to those skilled in the art that many variations and modifications can be made without departing from the spirit and scope of the embodiments of the invention.

Claims (8)

一種場效電晶體，包括：一閘極，配置為施加閘極電壓；一源極和一汲極，配置為輸出電流；一半導體層，設置為靠近該源極和該汲極；以及一閘極絕緣層，設置在該閘極與該半導體層之間，其中該閘極絕緣層包括含有矽和一種或兩種或更多種鹼土金屬元素的一氧化物。 A field effect transistor comprising: a gate configured to apply a gate voltage; a source and a drain configured to output current; a semiconductor layer disposed adjacent to the source and the drain; and a gate A pole insulating layer is disposed between the gate and the semiconductor layer, wherein the gate insulating layer comprises an oxide containing germanium and one or two or more alkaline earth metal elements. 根據申請專利範圍第1項所述的場效電晶體，其中該氧化物包括鋁及/或硼。 The field effect transistor of claim 1, wherein the oxide comprises aluminum and/or boron. 根據申請專利範圍第1項所述的場效電晶體，其中該半導體層是一氧化物半導體。 The field effect transistor according to claim 1, wherein the semiconductor layer is an oxide semiconductor. 一種顯示元件，包括：一光控制元件，被配置以根據一驅動訊號控制光輸出；以及一驅動電路，包括根據申請專利範圍第1項所述的場效電晶體並且被配置以驅動該光控制元件。 A display element comprising: a light control element configured to control light output according to a driving signal; and a driving circuit comprising the field effect transistor according to claim 1 and configured to drive the light control element. 根據申請專利範圍第4項所述的顯示元件，其中該光控制元件包括一電激發光元件、一電致變色元件、一液晶元件、一電泳元件以及一電潤濕元件。 The display element of claim 4, wherein the light control element comprises an electroluminescent element, an electrochromic element, a liquid crystal element, an electrophoretic element, and an electrowetting element. 一種影像顯示裝置，包括：複數個顯示元件，設置為一矩陣形式，該複數個顯示元件中的每一個是根據申請專利範圍第4項所述的顯示元件；複數條線路，被配置以單獨地將閘極電壓和訊號電壓施加到該複數個顯示元件中的該等場效電晶體；以及一顯示控制裝置，被配置以根據影像資料經由該複數條線路單獨地控制該等場效電晶體的該閘極電壓和該訊號電壓。 An image display device comprising: a plurality of display elements arranged in a matrix form, each of the plurality of display elements being a display element according to claim 4; a plurality of lines configured to be individually Applying a gate voltage and a signal voltage to the field effect transistors in the plurality of display elements; and a display control device configured to individually control the field effect transistors via the plurality of lines according to the image data The gate voltage and the signal voltage. 一種系統，包括：根據申請專利範圍第6項所述的影像顯示裝置；以及 一影像資料產生裝置，被配置以基於要顯示的影像資訊產生影像資料並將該影像資料輸出到該影像顯示裝置。 A system comprising: the image display device according to claim 6; An image data generating device configured to generate image data based on the image information to be displayed and output the image data to the image display device. 一種用於場效電晶體的閘極絕緣體的組合物，包括：含有矽和一種或更多種鹼土金屬元素的一氧化物。 A composition for a gate insulator of a field effect transistor, comprising: a monooxide comprising cerium and one or more alkaline earth metal elements.