TWI577045B - 發光元件 - Google Patents
發光元件 Download PDFInfo
- Publication number
- TWI577045B TWI577045B TW102124862A TW102124862A TWI577045B TW I577045 B TWI577045 B TW I577045B TW 102124862 A TW102124862 A TW 102124862A TW 102124862 A TW102124862 A TW 102124862A TW I577045 B TWI577045 B TW I577045B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- light
- oxide
- insulating layer
- oxide insulating
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 239000011148 porous material Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 150000004820 halides Chemical class 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 140
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000004020 conductor Substances 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 5
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 3
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 3
- -1 arsenic Aluminum Chemical compound 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 3
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 239000011153 ceramic matrix composite Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000011156 metal matrix composite Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QTPKWWJYDWYXOT-UHFFFAOYSA-N [W+4].[O-2].[In+3] Chemical compound [W+4].[O-2].[In+3] QTPKWWJYDWYXOT-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
本發明關於一種發光元件,特別是關於一種具有高反射率之發光元件。
光電元件,例如發光二極體(Light-emitting Diode;LED),目前已經廣泛地使用在光學顯示裝置、交通號誌、資料儲存裝置、通訊裝置、照明裝置與醫療器材上。此外,上述之LED可與其他元件組合連接以形成一發光裝置。第1圖為習知之發光裝置結構示意圖,如第1圖所示,一發光裝置1包含一具有一電路14之次載體12;一焊料16位於上述次載體12上,藉由此焊料16將LED 11固定於次載體12上並使LED 11與次載體12上之電路14形成電連接;以及一電性連接結構18,以電性連接LED 11之電極15與次載體12上之電路14;其中,上述之次載體12可以是導線架或大尺寸鑲嵌基底。
一發光元件,包含一發光疊層,包含一主動層;以及一非氧化物絕緣層,位於發光疊層之下,其中非氧化物絕緣層之折射率小於1.4。
1‧‧‧發光裝置
11‧‧‧LED
12‧‧‧次載體
13、20‧‧‧基板
14‧‧‧電路
15‧‧‧電極
16‧‧‧焊料
18‧‧‧電性連接結構
2、40‧‧‧發光元件
21‧‧‧導電黏結層
22‧‧‧反射結構
220‧‧‧歐姆接觸層
222‧‧‧阻障層
224‧‧‧反射黏結層
226‧‧‧反射層
23‧‧‧透明導電結構
230‧‧‧第一導電氧化層
231‧‧‧第一接觸上表面
232‧‧‧第二導電氧化層
24‧‧‧非氧化物絕緣層
241‧‧‧第二接觸上表面
242‧‧‧孔隙
25‧‧‧發光疊層
251‧‧‧第一半導體層
252‧‧‧發光層
253‧‧‧第二半導體層
254‧‧‧出光上表面
26‧‧‧電接觸層
27‧‧‧第一電極
271‧‧‧電流注入部
272‧‧‧延伸部
273‧‧‧突出部
2721‧‧‧第一支線
2722‧‧‧第二支線
28‧‧‧第二電極
29‧‧‧窗戶層
4‧‧‧燈泡
41‧‧‧燈罩
42‧‧‧透鏡
43‧‧‧載體
44‧‧‧照明模組
45‧‧‧燈座
46‧‧‧散熱槽
47‧‧‧連結部
48‧‧‧電連結器
第1圖繪示習知之發光裝置結構示意圖。
第2A圖繪示本申請案一實施例之發光元件之上視圖。
第2B圖繪示第2A圖沿剖面線AA’之剖面圖。
第3圖繪示第一接觸上表面表面積相對於第一接觸上表面和
第二接觸上表面之表面積總和之百分比對功率之示意圖。
第4圖繪示本申請案一實施例之燈泡分解示意圖。
本發明之實施例會被詳細地描述,並且繪製於圖式中,相同或類似的部分會以相同的號碼在各圖式以及說明出現。
第2A圖為本申請案一實施例之發光元件上視圖,第2B圖繪示第2A圖沿剖面線AA’之剖面圖。如第2B圖所示,一發光元件2具有一基板20;一導電黏結層21,位於基板20之上;一反射結構22,位於導電黏結層20之上;一透明導電結構23,位於反射結構22之上;一窗戶層29,位於透明導電結構23之上;一非氧化物絕緣層24,位於透明導電結構23與窗戶層29之間;一發光疊層25,位於窗戶層29之上;一電接觸層26,位於發光疊層25之上,一第一電極27,位於發光疊層25與電接觸層26之上;以及一第二電極28,位於基板20之下。發光疊層25具有一第一半導體層251,位於窗戶層29與第一電極27之間;一主動層252,位於第一半導體層251與第一電極27之間;以及一第二半導體層
253,位於主動層252與第一電極27之間。
第一電極27及/或第二電極28用以接受外部電壓,可由透明導電材料或金屬材料所構成。透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化銦鎢(IWO)、氧化鋅(ZnO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN)、磷化鎵(GaP)、砷化鎵(GaAs)、磷砷化鎵(GaAsP)、氧化銦鋅(IZO)或類鑽碳薄膜(DLC)。金屬材料包含但不限於鋁(Al)、鉻(Cr)、銅(Cu)、錫(Sn)、金(Au)、鎳(Ni)、鈦(Ti)、鉑(Pt)、鉛(Pb)、鋅(Zn)、鎘(Cd)、銻(Sb)、鈷(Co)或上述材料之合金等。第一電極27具有一電流注入部271與一延伸部272。如第2A圖所示,電流注入部271大致位於第二半導體層253之中心之上,延伸部272具有一第一支線2721自電流注入部271向發光元件2之邊界延伸,以及一第二支線2722自第一支線2721延伸,以提升電流擴散。如第2B圖所示,延伸部272包含一突部273,位於電接觸層26之上,包覆電接觸層26至少一表面,增加與電接觸層26形成歐姆接觸的面積,降低發光元件2的電阻,其中突部273高於電流注入部271。
電接觸層26位於第二支線2722與發光疊層25之間,用以形成第二支線2722與發光疊層25之間的歐姆接觸。電接觸層26與第二支線2722之間的電阻值以及電接觸層26與發光疊層25之間的電阻值分別小於第一電極27與發光疊層25之間的電阻值。電接觸層26之材料可為半導體材料,包含一種以上之元素,此元素可選自鎵(Ga)、鋁(Al)、銦(In)、磷(P)、氮(N)、鋅(Zn)、鎘(Cd)與硒(Se)所構成之群組,其電性可與第二半導體層253相同。
發光疊層25之材料可為半導體材料,包含一種以上之元素,此元素可選自鎵(Ga)、鋁(Al)、銦(In)、磷(P)、氮(N)、鋅(Zn)、鎘(Cd)與硒(Se)所構成之群組。第一半導體層251與第二半導體層253的電性相異,用以產生電子或電洞。第二半導體層253之一出光上表面254可為一粗糙表面以降低全反射,提升光電元件2之發光效率。主動層252可發出一種或多種色光,可為可見光或不可見光,其結構可為單異質結構、雙異質結構、雙側雙異質結構、多層量子井或量子點。窗戶層29之電性可與第一半導體層251之電性相同,可用作光摘出層以提升發光元件2之發光效率。窗戶層29對於主動層252所發之光為透明,其材料可為透明導電材料,包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化銦鎢(IWO)、氧化鋅(ZnO)、氧化鎂(MgO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN)、磷化鎵(GaP)或氧化銦鋅(IZO)。
透明導電結構23對於發光疊層25所發之光為透明,用以增加窗戶層251與反射結構22之間的歐姆接觸以及電流傳導與擴散,並可與反射結構22形成全方位反射鏡(Omni-Directional Reflector,ODR)。其材料可為透明導電材料,包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化銦鎢(IWO)、氧化鋅(ZnO)、磷化鎵(GaP)、氧化銦鈰(ICO)、氧化銦鎢(IWO)、氧化銦鈦(ITiO)、氧化銦鋅(IZO)、氧化銦鎵(IGO)、氧化鎵鋁鋅(GAZO)或上述材料之組合。透明導電結構23具有一第一導電氧化層230,位於非氧化物絕緣層24之下,以
及一第二導電氧化層232,位於發光疊層25與第一導電氧化層230之間。其中,第一導電氧化層230與第二導電氧化層232材料不同。另一實施例中,第一導電氧化層230與第二導電氧化層232之材料相較至少一組成元素相異,例如第一導電氧化層230之材料為氧化銦鋅(IZO),第二導電氧化層232之材料為氧化銦錫(ITO)。第二導電氧化層232可與非氧化絕緣層24及/或窗戶層29直接接觸,且覆蓋非氧化絕緣層24至少一表面。
非氧化物絕緣層24對於發光疊層25所發之光之穿透率大於90%,折射率小於1.4,較佳為介於1.3與1.4之間。非氧化物絕緣層24之材料可為非氧化物絕緣材料,例如為苯并環丁烯(BCB)、環烯烴聚合物(COC)、氟碳聚合物(Fluorocarbon Polymer)、氮化矽(SiNx)、氟化鈣(CaF2)或氟化鎂(MgF2)。另一實施例中,非氧化物絕緣層24之材料可包含鹵化物或IIA族及VII族之化合物,例如氟化鈣(CaF2)或氟化鎂(MgF2)。非氧化物絕緣層24之折射率小於窗戶層29與透明導電結構23之折射率。由於非氧化物絕緣層24之折射率小於窗戶層29與透明導電結構23之折射率,窗戶層29與非氧化物絕緣層24間介面之臨界角小於窗戶層29與透明導電結構23間介面的臨界角,所以發光疊層25所發之光射向非氧化物絕緣層24後,在窗戶層29與非氧化物絕緣層24之間的介面形成全反射的機率增加。此外,原本在窗戶層29與透明導電結構23之間的介面未形成全反射而進入透明導電結構23之光,在透明導電結構23與非氧化物絕緣層24之間的介面亦會形成全反射,因而提升發光提升發光元件2的出光效率。透明導電結構23具有一第一接觸上表面231與窗戶層29接觸,非氧化物絕緣層24具有一第二接觸上表面241與窗戶層29接觸,第一接觸
上表面231與第二接觸上表面241大致位於同一水平面,即第一接觸上表面231與出光上表面254之距離大致和第二接觸上表面241與出光上表面254之距離相等。第3圖繪示第一接觸上表面231表面積相對於第一接觸上表面231和第二接觸上表面241之表面積總和之百分比對發光元件2之功率之示意圖。如第3圖所示,第一接觸上表面231的表面積相對於第一接觸上表面231和第二接觸上表面241之表面積總和之百分比約為10%~50%時,發光元件2之功率在50mW之上,相較於百分比為50之上的發光元件功率為佳。更佳為百分比約為12.5%~25%時,功率在55mW之上。換言之,非氧化物絕緣層24相對窗戶層29之表面面積與窗戶層29相對非氧化物絕緣層24之表面面積之比值約為0.5~0.9,發光元件2之功率較佳。另一實施例中,第二接觸上表面241可為一粗糙表面,散射發光疊層所發之光以提升光電元件2之出光效率。非氧化物絕緣層24可具有圖案化分佈,例如大致位於電接觸層26及/或電流注入部271之正下方,增進電流的擴散。另一實施例中,非氧化物絕緣層24可以呈現非規則性的分佈,或非位於電接觸層26及/或電流注入部271之正下方。非氧化物絕緣層24之厚度小於透明導電結構23之一半厚度;另一實施例中,非氧化物絕緣層24之厚度小於透明導電結構23之1/5厚度,以避免透明導電結構23形成後的表面平坦化製程破壞非氧化物絕緣層24之結構。非氧化物絕緣層24至少一表面被透明導電層23覆蓋,增加透明導電層23與窗戶層29之間的接合,提升結構的機械強度。另一實施例中,非氧化物絕緣層24可與反射結構22直接接合,避免透明導電結構23與反射結構22之間黏結力不足,導致剝離。非氧化物絕緣層24更包含複數個孔隙242穿過非氧化物絕緣層24,其中透明導電結構23填入複數個孔隙242中,與窗戶層29形成歐姆接
觸。
反射結構22可反射來自發光疊層25之光,其材料可為金屬材料,包含但不限於銅(Cu)、鋁(Al)、錫(Sn)、金(Au)、銀(Ag)、鉛(Pb)、鈦(Ti)、鎳(Ni)、鉑(Pt)、鎢(W)或上述材料之合金等。反射結構22包含一反射層226;一反射黏結層224位於反射層226之下;一阻障層222,位於反射黏結層224之下;以及一歐姆接觸層220,位於阻障層222之下。反射層226可反射來自發光疊層25之光,反射黏結層224黏結反射層226與阻障層222,阻障層222可防止反射層226之材料擴散至電極層220,破壞反射層226的結構,導致反射層226的反射率降低,歐姆接觸層220與下方導電黏結層21形成歐姆接觸。導電黏結層21可連接基板20與反射結構22,可具有複數個從屬層(未顯示)。導電黏結層21之材料可為透明導電材料或金屬材料,透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)、氧化鋅(ZnO)、磷化鎵(GaP)、氧化銦鈰(ICO)、氧化銦鎢(IWO)、氧化銦鈦(ITiO)、氧化銦鋅(IZO)、氧化銦鎵(IGO)、氧化鎵鋁鋅(GAZO)或上述材料之組合。金屬材料包含但不限於銅(Cu)、鋁(Al)、錫(Sn)、金(Au)、銀(Ag)、鉛(Pb)、鈦(Ti)、鎳(Ni)、鉑(Pt)、鎢(W)或上述材料之合金等。
基板20可用以支持位於其上之發光疊層25與其它層或結構,其材料可為透明材料或導電材料。透明材料包含但不限於藍寶石(Sapphire)、鑽石(Diamond)、玻璃(Glass)、環氧樹脂(Epoxy)、石英(Quartz)、壓克力(Acryl)、氧化鋁(Al2O3)、氧化鋅(ZnO)或氮化鋁(AlN)等。導電材料包含但不限於銅(Cu)、鋁(Al)、
鉬(Mo)、錫(Sn)、鋅(Zn)、鎘(Cd)、鎳(Ni)、鈷(Co)、類鑽碳薄膜(Diamond Like Carbon;DLC)、石墨(Graphite)、碳纖維(Carbon fiber)、金屬基複合材料(Metal Matrix Composite;MMC)、陶瓷基複合材料(Ceramic Matrix Composite;CMC)、矽(Si)、磷化碘(IP)、硒化鋅(ZnSe)、砷化鎵(GaAs)、碳化矽(SiC)、磷化鎵(GaP)、磷砷化鎵(GaAsP)、磷化銦(InP)、鎵酸鋰(LiGaO2)或鋁酸鋰(LiAlO2)。
第4圖係繪示出一燈泡分解示意圖,一燈泡4具有一燈罩41;一透鏡42,置於燈罩41之中;一照明模組44,位於透鏡42之下;一燈座45,具有一散熱槽46,用以承載照明模組44;一連結部47;以及一電連結器48,其中連結部47連結燈座45與電連接器48。照明模組44具有一載體43;以及複數個前述任一實施例之發光元件40,位於載體43之上。
惟上述實施例僅為例示性說明本申請案之原理及其功效,而非用於限制本申請案。任何本申請案所屬技術領域中具有通常知識者均可在不違背本申請案之技術原理及精神的情況下,對上述實施例進行修改及變化。因此本申請案之權利保護範圍如後述之申請專利範圍所列。
2‧‧‧發光元件
20‧‧‧基板
21‧‧‧導電黏結層
22‧‧‧反射結構
220‧‧‧歐姆接觸層
222‧‧‧阻障層
224‧‧‧反射黏結層
226‧‧‧反射層
23‧‧‧透明導電結構
230‧‧‧第一導電氧化層
231‧‧‧第一接觸上表面
232‧‧‧第二導電氧化層
24‧‧‧非氧化物絕緣層
241‧‧‧第二接觸上表面
242‧‧‧孔隙
25‧‧‧發光疊層
251‧‧‧第一半導體層
252‧‧‧發光層
253‧‧‧第二半導體層
254‧‧‧出光上表面
26‧‧‧電接觸層
27‧‧‧第一電極
271‧‧‧電流注入部
272‧‧‧延伸部
273‧‧‧突部
28‧‧‧第二電極
29‧‧‧窗戶層
Claims (8)
- 一發光元件,包含:一發光疊層,包含一主動層;一非氧化物絕緣層,與該發光疊層連接;複數個孔隙穿過該非氧化物絕緣層;以及一透明導電結構覆蓋該非氧化物絕緣層之一表面且填入該複數個孔隙中;其中該非氧化物絕緣層之折射率小於1.4;其中該非氧化物絕緣層材料包含鹵化物或IIA族及VIIA族之化合物。
- 如請求項第1項所述的發光元件,更包含一窗戶層,位於該主動層與該非氧化物絕緣層之間,其中該窗戶層之折射率大於該非氧化物絕緣層之折射率。
- 如請求項第1項所述的發光元件,更包含一電接觸層,位於該非氧化物絕緣層之正上方。
- 如請求項第3項所述的發光元件,其中該電接觸層包含半導體材料。
- 如請求項第3項所述的發光元件,更包含一第一電極,位於該發光疊層之上。
- 如請求項第1項所述的發光元件,更包含:一基板,位於該非氧化物絕緣層之下;以及一導電黏結層,位於該基板與該非氧化物絕緣層之間。
- 一發光元件,包含:一發光疊層,包含一主動層;一非氧化物絕緣層,與該發光疊層連接;一電接觸層,位於該非氧化物絕緣層之正上方;以及一第一電極,位於該發光疊層之上;其中該非氧化物絕緣層之折射率小於1.4且包含鹵化物或IIA族及VIIA族之化合物;其中,該第一電極包含一突部位於該電接觸層之上,及/或該第一電極包含一延伸部包覆該電接觸層。
- 一發光元件,包含:一發光疊層,包含一主動層;一非氧化物絕緣層,與該發光疊層連接;以及複數個孔隙穿過該非氧化物絕緣層;其中該非氧化物絕緣層之折射率小於1.4且包含鹵化物或IIA族及VIIA族之化合物;其中該非氧化物絕緣層之厚度小於該透明導電結構之1/5厚度,該透明導電結構包含:一第一導電氧化層,位於該非氧化物絕緣層之下;以及一第二導電氧化層,位於該發光疊層與該第一導電氧化層之間,該第一導電氧化層與該第二導電氧化層之材料相較至少一組成元素相異。
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DE102014108572.8A DE102014108572B4 (de) | 2013-07-10 | 2014-06-18 | Licht emittierendes Element |
US14/866,232 US9318663B2 (en) | 2013-07-10 | 2015-09-25 | Light-emitting element |
US15/070,727 US9660146B2 (en) | 2013-07-10 | 2016-03-15 | Light-emitting element |
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