TWI630857B - Substrate manufacturing method and laser processing device - Google Patents

Substrate manufacturing method and laser processing device Download PDF

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Publication number
TWI630857B
TWI630857B TW105117381A TW105117381A TWI630857B TW I630857 B TWI630857 B TW I630857B TW 105117381 A TW105117381 A TW 105117381A TW 105117381 A TW105117381 A TW 105117381A TW I630857 B TWI630857 B TW I630857B
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surface layer
layer
substrate
hole
film
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TW105117381A
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Chinese (zh)
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TW201701741A (en
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礒圭二
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住友重機械工業股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
    • H05K3/0047—Drilling of holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02288—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating printing, e.g. ink-jet printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7687—Thin films associated with contacts of capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light

Abstract

本發明提供一種基板製造方法，無需提高用於吸收紅外雷射的光能量之材料的塗佈精度，便可提高雷射能量的利用效率。在包括以內部導體層、絕緣層及表層導體層的順序被堆積之層疊結構之基板的表層導體層上，藉由塗佈吸收紅外區域波長的光之表層膜的液態材料而形成表層膜。以俯視觀察時，在表層膜的內部配置射束點的條件下，藉由對表層膜入射紅外區域的雷射束，在表層導體層及絕緣層形成通孔。 The invention provides a substrate manufacturing method, which can improve the utilization efficiency of laser energy without increasing the coating accuracy of a material for absorbing the optical energy of infrared lasers. A surface layer film is formed by coating a liquid material of a surface layer film that absorbs light of an infrared region wavelength on a surface layer conductor layer of a substrate having a laminated structure stacked in the order of an internal conductor layer, an insulating layer and a surface layer conductor layer. When viewed in a plan view, a through-hole is formed in the surface-layer conductor layer and the insulating layer by a laser beam incident on the surface-layer film in the infrared region under the condition that a beam spot is arranged inside the surface-layer film.

Description

基板製造方法及雷射加工裝置 Substrate manufacturing method and laser processing device

本發明係一種利用雷射束在表層導體層設於絕緣層上基板的表層導體層及絕緣層上形成通之方法及雷射加工裝置。 The invention relates to a method and a laser processing device for forming a via using a laser beam on a surface layer conductive layer and a surface layer conductive layer provided on a substrate on an insulating layer and an insulating layer.

作為在印刷電路板表層的銅箔上形成通孔之方法，已知有使用雷射束之直接加工法。直接加工法為藉由將雷射束入射於表層的銅箔而在銅箔及其下的樹脂層形成通孔之方法。銅的光吸收率在紫外區域中較高，而在紅外區域中較低。故，對於銅箔的直接加工，通常使用紫外區域的雷射束。當使用紅外區域的雷射束時，為了提高銅的光吸收率，對銅箔的表面進行塗黑處理等。 As a method of forming a through hole in a copper foil on the surface layer of a printed circuit board, a direct processing method using a laser beam is known. The direct processing method is a method of forming a through hole in a copper foil and a resin layer under the copper foil by irradiating a laser beam on the copper foil on the surface layer. The light absorption of copper is higher in the ultraviolet region and lower in the infrared region. Therefore, for direct processing of copper foil, a laser beam in the ultraviolet region is usually used. When using a laser beam in the infrared region, in order to increase the light absorption of copper, the surface of the copper foil is subjected to blackening treatment or the like.

紫外雷射光源的價格相較於紅外雷射光源昂貴，而且維護費用亦較高。為了降低生產成本，使用紅外雷射光源為較佳。但是，當使用紅外雷射光源時，需要實施用於提高光吸收率的塗黑處理等表面處理。 Ultraviolet laser light sources are more expensive than infrared laser light sources, and their maintenance costs are also higher. In order to reduce production costs, it is better to use an infrared laser light source. However, when an infrared laser light source is used, it is necessary to perform a surface treatment such as a blackening treatment for improving the light absorption rate.

近年以來，隨著電子設備的小型化，要求印刷電路板或中介層(Interposer)佈線的微細化。為了使佈線微細化， 還要求將內層或表層上的銅箔減薄。若將銅箔減薄，則難以進行塗黑處理等表面處理。 In recent years, with the miniaturization of electronic devices, miniaturization of printed circuit boards or interposer wiring is required. In order to miniaturize the wiring, It is also required to thin the copper foil on the inner layer or the surface layer. If the copper foil is thinned, it becomes difficult to perform surface treatment such as blackening treatment.

在下述專利文獻1中，公開了不進行銅箔的塗黑處理而使用紅外雷射進行鑽孔加工之技術。依據專利文獻1中公開之加工方法，在最表面的導體層上以圖案狀塗佈糊狀材料。糊狀材料包含蠟及金屬粉末。照射比塗佈有糊狀材料之區域更寬的光束直徑的二氧化碳雷射。照射之紅外雷射藉由糊狀材料有效地被吸收，藉此糊狀材料的溫度上升。由於銅箔因該溫度的上升而被燒蝕，故在銅箔形成孔。 Patent Document 1 below discloses a technique for performing a drilling process using an infrared laser without performing a blackening treatment of a copper foil. According to the processing method disclosed in Patent Document 1, a paste-like material is applied in a pattern on the outermost conductor layer. The pasty material contains wax and metal powder. A carbon dioxide laser irradiating a wider beam diameter than a region coated with a pasty material. The irradiated infrared laser is effectively absorbed by the paste material, whereby the temperature of the paste material rises. Since the copper foil is ablated due to this temperature rise, holes are formed in the copper foil.

(先前技術文獻) (Prior technical literature) (專利文獻) (Patent Literature)

專利文獻1：日本特開2014-143237號公報 Patent Document 1: Japanese Patent Application Laid-Open No. 2014-143237

依據專利文獻1中公開之方法，待形成孔之位置及平面形狀被規定為塗佈糊狀材料之位置及糊狀材料的平面形狀。故，待形成孔之位置精度受塗佈糊狀材料時的位置精度的限制。若欲提高孔之位置精度，需要提高塗佈糊狀材料時的位置精度。並且，需要使糊狀材料的平面形狀與待形成孔之平面形狀匹配。 According to the method disclosed in Patent Document 1, the position and the planar shape of the hole to be formed are specified as the position where the paste-like material is applied and the plane shape of the paste-like material. Therefore, the position accuracy of the holes to be formed is limited by the position accuracy when the paste-like material is applied. In order to improve the position accuracy of the holes, it is necessary to improve the position accuracy when applying the paste-like material. Also, it is necessary to match the planar shape of the pasty material with the planar shape of the hole to be formed.

照射於糊狀材料周圍銅箔上之紅外雷射的大部分成分，在銅箔表面被反射。被反射之紅外雷射的成分對鑽孔 加工未做出貢獻。故，導致了紅外雷射能量的利用效率的降低。 Most of the components of the infrared laser irradiated on the copper foil around the pasty material are reflected on the surface of the copper foil. Components of the reflected infrared laser for drilling Processing did not contribute. Therefore, the utilization efficiency of infrared laser energy is reduced.

本發明的目的在於提供無需提高用於吸收紅外雷射的光能量之材料的塗佈精度，而能夠提高雷射能量的利用效率之基板製造方法。本發明的其他目的在於提供適用於該基板製造方法之雷射加工裝置。 An object of the present invention is to provide a substrate manufacturing method capable of improving the utilization efficiency of laser energy without increasing the coating accuracy of a material for absorbing the optical energy of infrared lasers. Another object of the present invention is to provide a laser processing apparatus suitable for the substrate manufacturing method.

依本發明的一觀點，提供一種基板製造方法，其具有：在包括以內部導體層、絕緣層及表層導體層的順序被堆積之層疊結構之基板的前述表層導體層上，藉由塗佈吸收紅外區域波長的光之表層膜的液態材料而形成前述表層膜之製程；以俯視觀察時，在前述表層膜的內部配置射束點之條件下，藉由對前述表層膜入射紅外區域之雷射束，在前述表層導體層及前述絕緣層形成通孔。 According to an aspect of the present invention, there is provided a substrate manufacturing method including: absorbing by coating on the surface-layer conductor layer of the substrate including a laminated structure in which an internal conductor layer, an insulating layer, and a surface-layer conductor layer are stacked in this order. The process of forming the surface layer film by liquid material of the surface layer film of light in the infrared region; when viewed from a top view, a laser beam is incident on the surface layer film to the infrared region under the condition that a beam spot is arranged inside the surface layer film. Bundle, forming a through hole in the surface layer conductor layer and the insulation layer.

依本發明的另一觀點，提供一種雷射加工裝置，其具有：塗佈機構，在包括以內部導體層、絕緣層及表層導體層的順序被堆積之層疊結構的基板上，塗佈表層膜的液態材料；雷射光源，輸出紅外區域的雷射束；導光光學系統，在藉由塗佈於前述基板上之前述液態 材料而形成之前述表層膜上，以俯視觀察時，在前述表層膜之外圍線的內側配置射束點之條件下，使自前述雷射光源輸出之雷射束入射於前述表層膜；及控制裝置，控制來自前述雷射光源的前述雷射束的輸出及藉由前述塗佈機構進行之前述液態材料的塗佈。 According to another aspect of the present invention, there is provided a laser processing apparatus having a coating mechanism for coating a surface layer film on a substrate including a laminated structure stacked in the order of an internal conductor layer, an insulating layer, and a surface layer conductor layer. Liquid material; laser light source, output laser beam in the infrared region; light-guiding optical system, in the aforementioned liquid state by coating on the aforementioned substrate On the surface film formed of a material, in a plan view, a laser beam output from the laser light source is made incident on the surface film under the condition that a beam point is arranged inside the peripheral line of the surface film; and The device controls the output of the laser beam from the laser light source and the coating of the liquid material by the coating mechanism.

藉由表層膜吸收雷射能量而進行加熱。藉由表層膜的熱量傳遞至表層導體層而在表層導體層形成通孔。若在表層導體層形成通孔，則其下的絕緣層吸收雷射能量並於絕緣層形成通孔。基於雷射束之射束點的位置及形狀，決定通孔的位置及形狀。故，無需提高表層膜的塗佈精度。 The surface layer film absorbs laser energy for heating. Through-holes are formed in the surface-layer conductor layer by transferring heat from the surface-layer film to the surface-layer conductor layer. If a through-hole is formed in the surface-layer conductor layer, the underlying insulating layer absorbs laser energy and forms a through-hole in the insulating layer. The position and shape of the through hole are determined based on the position and shape of the beam spot of the laser beam. Therefore, it is not necessary to improve the coating accuracy of the surface layer film.

10‧‧‧層疊板 10‧‧‧ laminated board

11‧‧‧絕緣層 11‧‧‧ Insulation

12‧‧‧內部導體層 12‧‧‧ Internal conductor layer

13‧‧‧絕緣層 13‧‧‧ Insulation

15‧‧‧帶有載體之導體箔 15‧‧‧ Conductor foil with carrier

16‧‧‧表層導體層 16‧‧‧ surface conductor layer

17‧‧‧剝離層 17‧‧‧ peeling layer

18‧‧‧載體導體箔 18‧‧‧ carrier conductor foil

20‧‧‧基板 20‧‧‧ substrate

25‧‧‧表層膜 25‧‧‧ surface film

26‧‧‧表層膜的液態材料 26‧‧‧ Liquid material for surface film

27‧‧‧表層膜的開口 27‧‧‧ Opening of surface film

30‧‧‧開口 30‧‧‧ opening

31‧‧‧通孔 31‧‧‧through hole

32‧‧‧非分佈區域 32‧‧‧ non-distribution area

34‧‧‧通路導體 34‧‧‧via conductor

50‧‧‧噴墨頭 50‧‧‧ inkjet head

51‧‧‧硬化用光源 51‧‧‧Light source for hardening

52‧‧‧硬化用光 52‧‧‧hardened

55‧‧‧雷射束 55‧‧‧ laser beam

56‧‧‧射束點 56‧‧‧ Beam point

60‧‧‧雷射光源 60‧‧‧laser light source

61‧‧‧導光光學系統 61‧‧‧light guide optical system

62‧‧‧光束掃描器 62‧‧‧ Beam Scanner

63‧‧‧透鏡 63‧‧‧Lens

70‧‧‧控制裝置 70‧‧‧control device

71‧‧‧塗佈區域計算部 71‧‧‧ Coating area calculation department

72‧‧‧油墨噴出控制部 72‧‧‧Ink ejection control section

73‧‧‧硬化用光源控制部 73‧‧‧Light source control unit for hardening

74‧‧‧光束掃描器控制部 74‧‧‧ Beam scanner control unit

75‧‧‧雷射輸出控制部 75‧‧‧laser output control unit

76‧‧‧通孔位置資料 76‧‧‧through hole location data

77‧‧‧塗佈區域定義資料 77‧‧‧Coated area definition data

81‧‧‧送料輥 81‧‧‧Feeding roller

82‧‧‧送料輥 82‧‧‧Feeding roller

83‧‧‧捲取輥 83‧‧‧ Take-up roller

84‧‧‧捲取輥 84‧‧‧ Take-up roller

85‧‧‧熱壓接合裝置 85‧‧‧Hot press bonding device

90‧‧‧表層導體層壓緊部 90‧‧‧Surface conductor laminated tight

91‧‧‧表層膜形成部 91‧‧‧ surface layer film forming section

92‧‧‧雷射加工部 92‧‧‧Laser Processing Department

在第1-1圖中，第1A圖~第1D圖係基於實施例之基板製造方法的製造中途階段中的基板的剖面圖。 In FIGS. 1-1, FIGS. 1A to 1D are cross-sectional views of a substrate in the middle stage of manufacturing based on the substrate manufacturing method of the embodiment.

在第1-2圖中，第1E圖~第1F圖係基於實施例之基板製造方法的製造中途階段中的基板的剖面圖，第1G圖係被製造之基板的剖面圖。 In FIGS. 1-2, FIGS. 1E to 1F are cross-sectional views of a substrate in the middle stage of manufacturing based on the substrate manufacturing method of the embodiment, and FIG. 1G is a cross-sectional view of a manufactured substrate.

在第2圖中，第2A圖係示於第1F圖之製造階段中的基板的俯視圖，第2B圖係示於第1C圖之形成表層膜之後的基板的俯視圖。 In FIG. 2, FIG. 2A is a plan view of the substrate in the manufacturing stage of FIG. 1F, and FIG. 2B is a plan view of the substrate after the surface layer film is formed in FIG. 1C.

在第3圖中，第3A圖係示於第1F圖之製造階段中的基板的俯視圖，第3B圖係示於第1C圖的形成表層膜 之後的基板的俯視圖。 In FIG. 3, FIG. 3A is a plan view of the substrate in the manufacturing stage of FIG. 1F, and FIG. 3B is a surface layer film shown in FIG. 1C. Top view of the subsequent substrate.

第4圖係表示銅及環氧的光吸收率的光譜之圖表。 Fig. 4 is a graph showing the light absorption spectra of copper and epoxy.

在第5圖中，第5A圖係表示表層膜與雷射束的射束點之間的位置關係之俯視圖，第5B圖係第5A圖的單點劃線5B-5B的剖面圖。 In FIG. 5, FIG. 5A is a plan view showing a positional relationship between the surface layer film and the beam spot of the laser beam, and FIG. 5B is a cross-sectional view of a one-dot chain line 5B-5B in FIG. 5A.

在第6圖中，第6A圖、第6C圖及第6E圖係形成通孔之後之基板表面的照片的略圖，第6B圖、第6D圖及第6F圖分別係第6A圖的單點劃線6B-6B、第6C圖的單點劃線6D-6D及第6E圖的單點劃線6F-6F的剖面圖。 In Fig. 6, Figs. 6A, 6C, and 6E are sketches of photographs of the surface of the substrate after the through holes are formed, and Figs. 6B, 6D, and 6F are single-dot strokes of Fig. 6A Sections 6B-6B, the one-dot chain line 6D-6D in FIG. 6C, and the one-dot chain line 6F-6F in FIG. 6E.

第7圖係基於實施例的雷射加工裝置的概略圖。 Fig. 7 is a schematic view of a laser processing apparatus according to an embodiment.

在第8圖中，第8A圖~第8C圖係基於其他實施例之基板製造方法的製造中途階段中的基板的剖面圖。 In FIG. 8, FIGS. 8A to 8C are cross-sectional views of a substrate in the middle stage of manufacturing based on a substrate manufacturing method of another embodiment.

參閱圖1A~圖1H、圖2A及圖2B，說明基於實施例的基板製造方法。 1A to 1H, 2A, and 2B, a method for manufacturing a substrate according to an embodiment will be described.

如圖1A所示，準備層疊板10和帶有載體之導體箔15。層疊板10包括以絕緣層11、內部導體層12及絕緣層13的順序堆積之層疊結構。絕緣層11、13例如使用環氧等絕緣性樹脂。內部導體層12例如使用銅箔。內部導體層12由佈線圖案、接地圖案、電源線圖案等來構成。作為其中一例，內部導體層12的厚度為5μm以上且10μm以下，絕緣層13的厚度為15μm以上且25μm以下。 As shown in FIG. 1A, a laminated board 10 and a conductor foil 15 with a carrier are prepared. The laminated board 10 includes a stacked structure in which an insulating layer 11, an internal conductor layer 12, and an insulating layer 13 are stacked in this order. As the insulating layers 11 and 13, for example, an insulating resin such as epoxy is used. The internal conductor layer 12 is made of, for example, copper foil. The internal conductor layer 12 is composed of a wiring pattern, a ground pattern, a power line pattern, and the like. As one example, the thickness of the internal conductor layer 12 is 5 μm or more and 10 μm or less, and the thickness of the insulating layer 13 is 15 μm or more and 25 μm or less.

帶有載體之導體箔15具有以表層導體層16、剝離層17及載體導體箔18的順序被堆積的層疊結構。表層導體層16及載體導體箔18例如使用銅箔。作為一例，表層導體層16的厚度為2μm以上且5μm以下，載體導體箔18的厚度為約18μm。 The carrier-equipped conductor foil 15 has a laminated structure in which the surface-layer conductor layer 16, the release layer 17, and the carrier conductor foil 18 are stacked in this order. As the surface conductor layer 16 and the carrier conductor foil 18, for example, a copper foil is used. As an example, the thickness of the surface conductor layer 16 is 2 μm or more and 5 μm or less, and the thickness of the carrier conductor foil 18 is approximately 18 μm.

使層疊板10的絕緣層13與帶有載體之導體箔15的表層導體層16相對，從而熱壓接合層疊板10和帶有載體之導體箔15。 The insulating layer 13 of the laminated board 10 is opposed to the surface conductor layer 16 of the conductive foil 15 with a carrier, so that the laminated board 10 and the conductive foil 15 with a carrier are thermally bonded.

如圖1B所示，將剝離層17及載體導體箔18自表層導體層16剝離。表層導體層16殘留於絕緣層13的表面上。藉由以上之製程得到包括以內部導體層12、絕緣層13及表層導體層16的順序被堆積之層疊結構之基板20。 As shown in FIG. 1B, the peeling layer 17 and the carrier conductor foil 18 are peeled from the surface-layer conductor layer 16. The surface-layer conductor layer 16 remains on the surface of the insulating layer 13. Through the above process, a substrate 20 including a laminated structure stacked in the order of the inner conductor layer 12, the insulating layer 13, and the surface conductor layer 16 is obtained.

如圖1C所示，在表層導體層16上形成表層膜25。表層膜25配置於待形成之通孔分佈的區域。對表層膜25使用吸收紅外區域波長的光之樹脂，例如使用環氧樹脂。表層膜25可含有如氧化銅等導熱率較高的材料的粉體。表層膜25的厚度例如為2μm以上且10μm以下。以下，對表層膜25的形成方法進行說明。 As shown in FIG. 1C, a surface layer film 25 is formed on the surface layer conductor layer 16. The surface layer film 25 is disposed in a region where the through holes are to be formed. As the surface layer film 25, a resin that absorbs light having a wavelength in the infrared region is used, and for example, epoxy resin is used. The surface layer film 25 may contain a powder of a material having a high thermal conductivity such as copper oxide. The thickness of the surface layer film 25 is, for example, 2 μm or more and 10 μm or less. A method for forming the surface layer film 25 will be described below.

將表層膜25的液態材料26以液滴的方式自噴墨頭50向基板20噴出。對液態材料26使用光硬化性，例如使用紫外線硬化性樹脂。對塗佈於表層導體層16的表面上之液態材料，照射來自硬化用光源51的硬化用光52，例如照射紫外線。藉由硬化塗佈於表層導體層16上之液態材料26而形成表層膜25。 The liquid material 26 of the surface layer film 25 is ejected as droplets from the inkjet head 50 to the substrate 20. For the liquid material 26, a photo-hardening property is used, for example, an ultraviolet-curable resin is used. The liquid material applied on the surface of the surface-layer conductor layer 16 is irradiated with a curing light 52 from a curing light source 51, for example, ultraviolet rays. The surface layer film 25 is formed by hardening the liquid material 26 coated on the surface conductor layer 16.

作為液態材料26的塗佈機構，可採用噴墨頭50以外的部件。例如，作為塗佈機構，可採用分配器、旋轉塗佈機等。 As the coating mechanism of the liquid material 26, a member other than the inkjet head 50 can be used. For example, as the coating mechanism, a dispenser, a spin coater, or the like can be used.

如圖1D所示，在待形成通孔之位置入射紅外區域的雷射束55。作為雷射束55的光源，例如使用二氧化碳雷射光源。藉由對表層膜25入射雷射束55而加熱表層膜25。基於將該熱量傳遞至表層導體層16而去除表層導體層16，並形成開口30。且露出於開口30的底部之絕緣層13，亦藉由雷射束55的入射被去除而形成通孔31。通孔31貫穿表層導體層16及絕緣層13而到達內部導體層12。雷射束55為脈衝雷射束。藉由使各雷射脈衝的脈衝能量優化，用單脈衝或多個脈衝形成通孔31。 As shown in FIG. 1D, a laser beam 55 in the infrared region is incident at a position where a through hole is to be formed. As a light source of the laser beam 55, for example, a carbon dioxide laser light source is used. The surface layer film 25 is heated by entering the laser beam 55 into the surface layer film 25. The surface conductor layer 16 is removed based on transferring the heat to the surface conductor layer 16, and an opening 30 is formed. And the insulating layer 13 exposed at the bottom of the opening 30 is also removed by the incident of the laser beam 55 to form a through hole 31. The through-hole 31 penetrates the surface-layer conductor layer 16 and the insulation layer 13 and reaches the internal conductor layer 12. The laser beam 55 is a pulsed laser beam. By optimizing the pulse energy of each laser pulse, the through hole 31 is formed by a single pulse or a plurality of pulses.

如圖1E所示，在基板20形成多個通孔31。對於未形成通孔31之區域，殘留表層膜25。 As shown in FIG. 1E, a plurality of through holes 31 are formed in the substrate 20. For the area where the through-hole 31 is not formed, the surface layer film 25 remains.

如圖1F所示，形成通孔31之後，藉由除膠渣處理而去除殘留於表層導體層16上之表層膜25(圖1E)。關於除膠渣處理，例如可以使用高錳酸鹽。藉由該除膠渣處理，殘留於通孔31底面之樹脂殘渣亦被去除。 As shown in FIG. 1F, after forming the through hole 31, the surface layer film 25 remaining on the surface layer conductive layer 16 is removed by a desmearing process (FIG. 1E). Regarding the desmearing treatment, permanganate can be used, for example. By this degreasing treatment, the resin residue remaining on the bottom surface of the through hole 31 is also removed.

如圖1G所示，例如使用半加成法形成通路導體34。通路導體34連接絕緣層13上之導體圖案(例如紋間表面等)與內部導體層12。形成有通路導體34之基板20例如被用作中介層。 As shown in FIG. 1G, the via conductor 34 is formed using, for example, a semi-additive method. The via conductor 34 connects a conductor pattern (such as a land surface) on the insulating layer 13 and the inner conductor layer 12. The substrate 20 on which the via conductor 34 is formed is used as, for example, an interposer.

將示於圖1F之製造階段中的基板20的俯視圖的一例示於圖2A。在基板20形成多個通孔31。在通孔31以外 的區域，殘留有表層導體層16。 An example of a top view of the substrate 20 shown in the manufacturing stage of FIG. 1F is shown in FIG. 2A. A plurality of through holes 31 are formed in the substrate 20. Beyond Through Hole 31 Area, the surface conductor layer 16 remains.

將示於圖1C之形成表層膜25之後的基板20之俯視圖示於圖2B。在基板20的表層導體層16的一部分區域形成有表層膜25。雖然在該階段未形成通孔31(圖2A)，但是為了表示通孔31與表層膜25之間的相對的位置關係，用虛線表示通孔31。形成表層膜25之區域(以下，稱為塗佈區域。)，基於待形成之通孔31的分佈來決定。在圖2A中所示的例中，通孔31大致均等且規則地分佈於正方形或矩形的內部。塗佈區域被確定為包括通孔31規則地分佈之區域。 The top view of the substrate 20 shown in FIG. 1C after the surface layer film 25 is formed is shown in FIG. 2B. A surface layer film 25 is formed on a part of the surface layer conductor layer 16 of the substrate 20. Although no through hole 31 is formed at this stage (FIG. 2A), in order to show the relative positional relationship between the through hole 31 and the surface layer film 25, the through hole 31 is indicated by a dotted line. The area where the surface layer film 25 is formed (hereinafter referred to as a coating area) is determined based on the distribution of the through holes 31 to be formed. In the example shown in FIG. 2A, the through holes 31 are approximately evenly and regularly distributed inside a square or a rectangle. The coating area is determined as an area including the through holes 31 regularly distributed.

將示於圖1F之製造階段中的基板20的俯視圖的其他例示於圖3A。通孔31的分佈區域包圍正方形或者矩形的非分佈區域32。在非分佈區域32未配置有通孔31。 Another example of a top view of the substrate 20 shown in the manufacturing stage of FIG. 1F is shown in FIG. 3A. The distribution area of the through hole 31 surrounds a square or rectangular non-distribution area 32. The non-distribution area 32 is not provided with a through hole 31.

將與圖3A的通孔31的分佈相對應而形成有表層膜25之基板20的俯視圖示於圖3B。表層膜25具有與非分佈區域32(圖3A)相對應之開口27設於內部之正方形或者矩形平面形狀。在比通孔31的正方形或矩形分佈區域的外圍線稍微靠外側配置表層膜25的外圍線。在比非分佈區域32(圖3A)的外圍線稍微靠內側配置表層膜25的內週線。 A plan view of the substrate 20 on which the surface layer film 25 is formed corresponding to the distribution of the through holes 31 in FIG. 3A is shown in FIG. 3B. The surface film 25 has a square or rectangular planar shape in which the opening 27 corresponding to the non-distribution region 32 (FIG. 3A) is provided inside. The peripheral lines of the surface layer film 25 are arranged slightly outside the peripheral lines of the square or rectangular distribution area of the through hole 31. The inner peripheral line of the surface layer film 25 is arranged slightly inside from the outer peripheral line of the non-distribution area 32 (FIG. 3A).

在圖2A、圖2B的例及圖3A、圖3B的例的任一例中，在形成通孔31之部位，即在雷射束55(圖1D)入射之部位形成表層膜25。如圖3B所示，藉由將開口27與通孔31的非分佈區域32相對應而設於表層膜25，可減 少表層膜25的液態材料的使用量。 In any of the examples of FIGS. 2A and 2B and the examples of FIGS. 3A and 3B, the surface layer film 25 is formed at a portion where the through hole 31 is formed, that is, at a portion where the laser beam 55 (FIG. 1D) is incident. As shown in FIG. 3B, by providing the openings 27 and the non-distribution areas 32 of the through holes 31 in the surface layer film 25, the thickness can be reduced. The amount of liquid material used in the surface layer film 25 is reduced.

接著，參閱圖4、圖5A及圖5B，說明上述實施例的作用及效果。 Next, the functions and effects of the above embodiment will be described with reference to FIGS. 4, 5A, and 5B.

將銅及環氧的光吸收率的光譜示於圖4。對經電解研磨之銅、經粗化處理之銅及經塗黑處理之銅的光吸收率，分別用粗虛線、細實線、細虛線來表示。用粗實線來表示環氧的光吸收率。二氧化碳雷射的波長在9.2μm至10.8μm的範圍內。在二氧化碳雷射的波長區域中，可看出銅的光吸收率極其低。故，難以用二氧化碳雷射進行銅加工。在二氧化碳雷射的波長域中，環氧的光吸收率非常高。 The light absorption spectra of copper and epoxy are shown in FIG. 4. The light absorptivity of electrolytically milled copper, roughened copper, and blackened copper are represented by thick dashed lines, thin solid lines, and thin dashed lines, respectively. The light absorptivity of epoxy is represented by a thick solid line. The wavelength of the carbon dioxide laser is in the range of 9.2 μm to 10.8 μm. In the wavelength region of the carbon dioxide laser, it can be seen that the light absorption of copper is extremely low. Therefore, it is difficult to perform copper processing using a carbon dioxide laser. In the wavelength region of carbon dioxide laser, the light absorption of epoxy is very high.

在實施例中，在示於圖1D之製程中，雷射束55藉由表層膜25被吸收。對表層膜25，使用在二氧化碳雷射的波長域中光吸收率非常高的材料為較佳，例如環氧等樹脂。表層膜25藉由雷射束55被加熱。藉由將該熱量傳遞至表層導體層16，表層導體層16被燒蝕而形成開口30(圖1D)。若形成開口30，則絕緣層13藉由雷射束55被加熱而形成通孔31。 In the embodiment, in the process shown in FIG. 1D, the laser beam 55 is absorbed by the surface film 25. For the surface layer film 25, it is preferable to use a material having a very high light absorption rate in the wavelength region of carbon dioxide laser, for example, a resin such as epoxy. The surface layer film 25 is heated by a laser beam 55. By transferring this heat to the surface-layer conductor layer 16, the surface-layer conductor layer 16 is ablated to form an opening 30 (FIG. 1D). When the opening 30 is formed, the insulating layer 13 is heated by the laser beam 55 to form a through hole 31.

為了將藉由表層膜25產生之熱量輕鬆地傳遞至表層導體層16，可將具有高導熱率之材料的粉體混入於表層膜25中。作為可混入於表層膜25之粉體，例如可使用氧化銅。 In order to easily transfer the heat generated by the surface layer film 25 to the surface layer conductor layer 16, a powder of a material having a high thermal conductivity can be mixed into the surface layer film 25. As the powder that can be mixed into the surface layer film 25, for example, copper oxide can be used.

將表示表層膜25與雷射束55(圖1D)的射束點56之間的位置關係的一例之俯視圖示於圖5A。將圖5A的單 點劃線5B-5B中的剖視圖示於圖5B。以俯視觀察時，射束點56位於表層膜25的內部。通孔31的位置及俯視剖面的形狀，基於射束點56的位置及形狀來確定，不依賴於表層膜25的位置及平面形狀。故，對於表層膜25的位置及平面形狀不要求較高的精度。 A plan view showing an example of the positional relationship between the surface layer film 25 and the beam spot 56 of the laser beam 55 (FIG. 1D) is shown in FIG. 5A. Put the single A cross-sectional view in the one-dot chain line 5B-5B is shown in FIG. 5B. In a plan view, the beam spot 56 is located inside the surface film 25. The position of the through-hole 31 and the shape of the plan cross-section are determined based on the position and shape of the beam spot 56, and do not depend on the position and planar shape of the surface layer film 25. Therefore, high accuracy is not required for the position and planar shape of the surface layer film 25.

相較於藉由噴墨法形成之表層膜25的形狀，射束點56的形狀可更加接近於圓。故，相較於藉由表層膜25的平面形狀來確定通孔31的俯視剖面的形狀之情況，可使通孔31的俯視剖面更加接近於圓。 Compared with the shape of the surface layer film 25 formed by the inkjet method, the shape of the beam spot 56 can be closer to a circle. Therefore, compared with the case where the shape of the plan cross section of the through hole 31 is determined by the planar shape of the surface film 25, the plan cross section of the through hole 31 can be made closer to a circle.

參閱圖6A~圖6F，對基於上述實施例的方法形成通孔之評價實驗的結果進行說明。圖6A、圖6C及圖6E為描繪形成通孔之後的基板表面的相片之圖，圖6B、圖6D及圖6F分別為圖6A的單點劃線6B-6B、圖6C的單點劃線6D-6D及圖6E的單點劃線6F-6F的剖視圖。 Referring to FIG. 6A to FIG. 6F, the results of an evaluation experiment of forming a through hole based on the method of the above embodiment will be described. 6A, 6C, and 6E are photographs depicting the surface of the substrate after the through-holes are formed, and FIGS. 6B, 6D, and 6F are the one-dot chain lines 6B-6B and 6C of FIG. 6A, respectively. 6D-6D and cross-sectional views of the one-dot chain line 6F-6F of FIG. 6E.

如圖6B、圖6D及圖6F所示，用於評價實驗之基板包括絕緣層11、內部導體層12、絕緣層13及表層導體層16。對內部導體層12及表層導體層16使用銅箔。內部導體層12的厚度為20μm，表層導體層16的厚度為3μm。對絕緣層11、13使用環氧樹脂。絕緣層13的厚度為20μm。作為加工用雷射，使用了二氧化碳雷射。入射於基板之雷射束為高斯光束。 As shown in FIGS. 6B, 6D, and 6F, the substrate used for the evaluation experiment includes an insulating layer 11, an inner conductor layer 12, an insulating layer 13, and a surface-layer conductor layer 16. Copper foil is used for the inner conductor layer 12 and the surface conductor layer 16. The thickness of the inner conductor layer 12 is 20 μm, and the thickness of the surface conductor layer 16 is 3 μm. An epoxy resin is used for the insulating layers 11 and 13. The thickness of the insulating layer 13 is 20 μm. As the processing laser, a carbon dioxide laser was used. The laser beam incident on the substrate is a Gaussian beam.

雷射束的入射條件如下所示。 The laser beam incident conditions are shown below.

．脈衝能量4mJ ． Pulse energy 4mJ

．脈衝寬度4.3μs ． Pulse width 4.3μs

．射束點直徑(半值全寬)60μm ． Beam spot diameter (full width at half maximum) 60 μm

．入射發射數量1發 ． Incident emission number 1

圖6A及圖6B表示不形成表層膜25(圖1D)而對表層導體層16直接入射雷射束之試樣。在示於圖6C及圖6D之試樣中，表層膜25的厚度在2μm至7μm的範圍內存在偏差。在示於圖6E及圖6F之試樣中，表層膜25的厚度在8μm至10μm的範圍內存在偏差。 6A and 6B show a sample in which a laser beam is directly incident on the surface conductor layer 16 without forming the surface layer film 25 (FIG. 1D). In the samples shown in FIG. 6C and FIG. 6D, the thickness of the surface layer film 25 has a deviation in a range of 2 μm to 7 μm. In the samples shown in FIGS. 6E and 6F, the thickness of the surface layer film 25 has a deviation in a range of 8 μm to 10 μm.

如圖6A及圖6B所示，在未形成表層膜25之試樣中形成之通孔31的開口部直徑為約35μm。相反，如圖6C及圖6D所示，在形成厚度為2μm~7μm範圍內的表層膜25之試樣中形成之通孔31的開口部直徑為約60μm。如圖6E及圖6F所示，在形成厚度為8μm~10μm範圍內的表層膜25之試樣中形成之通孔31的開口部小於在示於圖6C及圖6D的試樣中形成之通孔31的開口部，而大於在示於圖6A~圖6B的試樣中形成之通孔31的開口部。 As shown in FIGS. 6A and 6B, the diameter of the opening of the through hole 31 formed in the sample in which the surface layer film 25 is not formed is about 35 μm. In contrast, as shown in FIGS. 6C and 6D, the diameter of the opening portion of the through-hole 31 formed in the sample forming the surface layer film 25 having a thickness in the range of 2 μm to 7 μm is about 60 μm. As shown in FIG. 6E and FIG. 6F, the opening portion of the through hole 31 formed in the sample forming the surface layer film 25 having a thickness in the range of 8 μm to 10 μm is smaller than the opening formed in the sample shown in FIG. The opening portion of the hole 31 is larger than the opening portion of the through hole 31 formed in the sample shown in FIGS. 6A to 6B.

在示於圖6C及圖6D之試樣及示於圖6E及圖6F之試樣中，通孔31的開口部周圍的表層膜25被去除，從而露出了通孔31周圍的表層導體層16的上面。在表層導體層16的上表面中已露出之區域相當於雷射束的射束輪廓的周邊部分。該周邊部分的能量密度具有足以去除表層膜25之大小，但是其大小無法達到可去除表層導體層16之高溫程度的大小。其結果，認為露出了表層導體層16的上表面。 In the samples shown in FIGS. 6C and 6D and the samples shown in FIGS. 6E and 6F, the surface film 25 around the opening of the through hole 31 is removed, so that the surface conductor layer 16 around the through hole 31 is exposed. Above. The area that has been exposed in the upper surface of the surface-layer conductor layer 16 corresponds to the peripheral portion of the beam profile of the laser beam. The energy density of the peripheral portion is large enough to remove the surface layer film 25, but the energy density is not large enough to remove the surface layer conductive layer 16 at a high temperature. As a result, it is considered that the upper surface of the surface-layer conductor layer 16 is exposed.

從上述評價實驗可知，若形成表層膜25(圖6D、圖 6F)，則相較於未形成表層膜25的情況，即使雷射照射條件相同，亦可形成較大的通孔31。換言之，藉由形成表層膜25，可降低用於形成通孔31之脈衝能量密度。這是因為表層膜25吸收雷射光束，藉此雷射能量的利用效率變高。 It can be seen from the above evaluation experiment that if the surface layer film 25 is formed (FIG. 6D, FIG. 6F), compared with the case where the surface layer film 25 is not formed, even if the laser irradiation conditions are the same, a larger through hole 31 can be formed. In other words, by forming the surface layer film 25, the pulse energy density for forming the through hole 31 can be reduced. This is because the surface layer film 25 absorbs the laser beam, thereby increasing the utilization efficiency of the laser energy.

在實施例中，藉由形成表層膜25(圖1D)，可降低用於形成通孔31所需之脈衝能量密度。故，可減少露出於通孔31的底面之內部導體層12(圖1D)的損壞。並且，可防止通孔31的內壁形狀成為桶狀。藉此，可提高形成通路導體34之製程的可靠性。 In the embodiment, by forming the surface layer film 25 (FIG. 1D), the pulse energy density required for forming the through hole 31 can be reduced. Therefore, damage to the inner conductor layer 12 (FIG. 1D) exposed on the bottom surface of the through hole 31 can be reduced. In addition, the shape of the inner wall of the through hole 31 can be prevented from becoming a barrel shape. Thereby, the reliability of the process of forming the via conductor 34 can be improved.

接著，參閱圖7，對基於實施例的雷射加工裝置進行說明。 Next, a laser processing apparatus according to the embodiment will be described with reference to FIG. 7.

將基於實施例之雷射加工裝置的概略圖示於圖7。自送料輥81送出層疊板10(圖1A)，並被捲取輥84捲取。直至自送料輥81送出後被捲取輥84捲取期間，層疊板10穿過表層導體層壓緊部90、表層膜形成部91及雷射加工部92。 The schematic diagram of the laser processing apparatus based on an Example is shown in FIG. The laminated plate 10 is sent out from the feed roller 81 (FIG. 1A), and is taken up by a take-up roller 84. During winding up by the take-up roller 84 after being fed out from the feed roller 81, the laminated board 10 passes through the surface-layer conductor laminating tight portion 90, the surface-layer film forming portion 91, and the laser processing portion 92.

表層導體層壓緊部90包括送料輥82、熱壓接合裝置85及捲取輥83。送料輥82送出帶有載體之導體箔15(圖1A)。自送料輥82被送出之帶有載體之導體箔15的表層導體層16(圖1A)緊貼於層疊板10的絕緣層13(圖1A)上。帶有載體之導體箔15以緊貼在層疊板10之狀態下穿過熱壓接合裝置85，藉此帶有載體之導體箔15的表層導體層16壓接於層疊板10的絕緣層13上。 The surface-layer conductor laminated tight portion 90 includes a feed roller 82, a thermocompression bonding device 85, and a take-up roller 83. The feed roller 82 feeds out the conductor foil 15 with a carrier (FIG. 1A). The surface conductive layer 16 (FIG. 1A) of the conductive foil 15 with a carrier fed from the feed roller 82 is closely adhered to the insulating layer 13 (FIG. 1A) of the laminated board 10. The conductor foil 15 with the carrier is passed through the thermocompression bonding device 85 in a state of being in close contact with the laminated board 10, whereby the surface conductor layer 16 of the conductor foil 15 with the carrier is crimped onto the insulating layer 13 of the laminated board 10.

帶有載體之導體箔15的載體導體箔18及剝離層17(圖1B)自表層導體層16剝離後被捲取輥83巻取。表層導體層16仍壓接於層疊板10。藉由以上的處理得到包括層疊板10與表層導體層16之基板20(圖1B)。 The carrier conductor foil 18 and the release layer 17 (FIG. 1B) with the carrier-containing conductor foil 15 are peeled from the surface-layer conductor layer 16 and taken up by a take-up roller 83. The surface conductor layer 16 is still crimped to the laminated board 10. The substrate 20 including the laminated board 10 and the surface conductor layer 16 is obtained by the above processes (FIG. 1B).

表層膜形成部91包括噴墨頭50(圖1C)及硬化用光源51(圖1C)。藉由自噴墨頭50噴出液態材料，液態材料被塗佈於基板20上。藉由對塗佈於基板20的液態材料照射來自硬化用光源51的光，硬化液態材料而形成表層膜25。 The surface layer film forming section 91 includes an inkjet head 50 (FIG. 1C) and a curing light source 51 (FIG. 1C). By ejecting the liquid material from the inkjet head 50, the liquid material is coated on the substrate 20. The liquid material applied to the substrate 20 is irradiated with light from the light source 51 for hardening to harden the liquid material to form a surface layer film 25.

雷射加工部92包括雷射光源60及導光光學系統61。導光光學系統61包括擴束器、光學掩膜、場透鏡、光束掃描器62及透鏡63等。作為雷射光源60，例如使用二氧化碳雷射光源。自雷射光源60輸出之脈衝雷射束經由光束掃描器62及透鏡63而入射於基板20。光束掃描器62向二維方向掃描雷射束。作為透鏡63，例如使用fθ透鏡。透鏡63將雷射束聚集於基板20的表面上。藉由雷射束入射於基板20上而形成通孔31(圖1D)。 The laser processing section 92 includes a laser light source 60 and a light guide optical system 61. The light guide optical system 61 includes a beam expander, an optical mask, a field lens, a beam scanner 62, a lens 63, and the like. As the laser light source 60, for example, a carbon dioxide laser light source is used. The pulsed laser beam output from the laser light source 60 is incident on the substrate 20 through the beam scanner 62 and the lens 63. The beam scanner 62 scans a laser beam in a two-dimensional direction. As the lens 63, for example, an fθ lens is used. The lens 63 focuses a laser beam on the surface of the substrate 20. A laser beam is incident on the substrate 20 to form a through hole 31 (FIG. 1D).

控制裝置70包括塗佈區域計算部71、油墨噴出控制部72、硬化用光源控制部73、光束掃描器控制部74、雷射輸出控制部75。在控制裝置70的記憶裝置78內，被確保可以記憶通孔位置資料76及塗佈區域定義資料77之區域。 The control device 70 includes a coating area calculation section 71, an ink ejection control section 72, a curing light source control section 73, a beam scanner control section 74, and a laser output control section 75. In the memory device 78 of the control device 70, it is ensured that the area of the through-hole position data 76 and the coating area definition data 77 can be stored.

塗佈區域計算部71依據通孔位置資料76確定待形成表層膜25(圖2B、圖3B)之塗佈區域。定義被確定的塗 佈區域之資訊作為塗佈區域定義資料77而被記憶於記憶裝置內。 The coating area calculation section 71 determines the coating area to be formed on the surface layer film 25 (FIG. 2B and FIG. 3B) based on the through-hole position data 76. Defined painted The information of the cloth area is stored in the storage device as the coating area definition data 77.

油墨噴出控制部72依據塗佈區域定義資料77控制噴墨頭50。藉此，液態材料塗佈於塗佈區域上。硬化用光源控制部73控制硬化用光源51的開/關。光束掃描器控制部74及雷射輸出控制部75分別依據通孔位置資料76控制光束掃描器62及雷射光源60。藉由示於圖7之雷射加工裝置，可執行將圖1B的帶有載體之導體箔15壓接於層疊板10之製程至形成圖1D的通孔31之製程。 The ink ejection control unit 72 controls the inkjet head 50 based on the application area definition data 77. Thereby, the liquid material is applied on the application area. The curing light source control section 73 controls the on / off of the curing light source 51. The beam scanner control section 74 and the laser output control section 75 control the beam scanner 62 and the laser light source 60 based on the through-hole position data 76, respectively. With the laser processing apparatus shown in FIG. 7, the process of crimping the conductor foil 15 with a carrier of FIG. 1B to the laminated board 10 to the process of forming the through hole 31 of FIG. 1D can be performed.

接著，參閱圖8A~圖8C說明基於其他實施例的基板製造方法。以下，對與示於圖1A~圖1G的實施例的差異進行說明，而省略有關共同結構的說明。 Next, a substrate manufacturing method according to another embodiment will be described with reference to FIGS. 8A to 8C. Hereinafter, differences from the embodiment shown in FIGS. 1A to 1G will be described, and the description of the common structure will be omitted.

如圖8A所示，在包含絕緣層11、內部導體層12、絕緣層13及表層導體層16之基板20的表面上形成表層膜25。在示於圖1C之實施例中，表層導體層16配置於基板20表面的大致整個區域內，而在本實施例中，表層導體層16已被圖案化。 As shown in FIG. 8A, a surface layer film 25 is formed on the surface of a substrate 20 including an insulating layer 11, an inner conductor layer 12, an insulating layer 13, and a surface layer conductor layer 16. In the embodiment shown in FIG. 1C, the surface-layer conductor layer 16 is disposed in substantially the entire area of the surface of the substrate 20, and in this embodiment, the surface-layer conductor layer 16 has been patterned.

如圖8B所示，藉由使雷射束55入射於表層膜25而形成通孔31。雷射束55為高斯光束。去除與高斯形狀的射束輪廓周邊部分相對應之區域的表層膜25，露出表層導體層16的上表面。在光束截面的中心附近的區域中，表層導體層16及絕緣層13被去除而形成通孔31。 As shown in FIG. 8B, the laser beam 55 is made incident on the surface layer film 25 to form a through hole 31. The laser beam 55 is a Gaussian beam. The surface layer film 25 in a region corresponding to the peripheral portion of the beam profile of the Gaussian shape is removed, and the upper surface of the surface layer conductor layer 16 is exposed. In the area near the center of the beam cross section, the surface-layer conductor layer 16 and the insulating layer 13 are removed to form a through-hole 31.

如圖8C所示，在通孔31內形成通路導體34。通路導體34連接形成通孔31之位置的內部導體層12和表層 導體層16。表層膜25殘留而用作保護膜。 As shown in FIG. 8C, a via conductor 34 is formed in the through hole 31. The via conductor 34 connects the inner conductor layer 12 and the surface layer where the through hole 31 is formed Conductive layer 16. The surface layer film 25 remains as a protective film.

以上依實施例說明了本發明，但是本發明並不限定於此。例如本領域技術人員顯然能夠進行各種變更、改良以及組合等。 The present invention has been described above according to the embodiments, but the present invention is not limited thereto. For example, those skilled in the art can obviously make various changes, improvements, and combinations.

Claims (8)

一種基板製造方法，其具有：在包括以內部導體層、絕緣層及表層導體層的順序被堆積之層疊結構之基板的前述表層導體層上，藉由塗佈吸收紅外區域波長的光之表層膜的液態材料而形成前述表層膜之製程；及以俯視觀察時，在前述表層膜的內部配置射束點之條件下，藉由對前述表層膜入射紅外區域的雷射束，在前述表層導體層及前述絕緣層形成通孔之製程；前述雷射束為高斯光束(Gaussian beam)，去除與高斯形狀的射束輪廓周邊部分相對應之區域的表層膜，露出表層導體層的上表面。A substrate manufacturing method comprising: coating a surface layer film that absorbs light having a wavelength in an infrared region on the surface layer conductor layer including a substrate having a laminated structure stacked in the order of an internal conductor layer, an insulating layer, and a surface layer conductor layer. A process for forming the aforementioned surface layer film by using a liquid material; and in a plan view, a beam spot is arranged inside the aforementioned surface layer film, and a laser beam is incident on the aforementioned surface layer film in the infrared region to the surface layer conductive layer. And a process for forming a through hole with the foregoing insulating layer; the aforementioned laser beam is a Gaussian beam, and the surface layer film in a region corresponding to a peripheral portion of the Gaussian-shaped beam profile is removed, exposing the upper surface of the surface layer conductive layer. 如申請專利範圍第1項所述之基板製造方法，其中，在形成前述通孔之製程中，藉由入射前述雷射束，在前述通孔的底面露出前述內部導體層。The method for manufacturing a substrate according to item 1 of the scope of patent application, wherein in the process of forming the through hole, the internal conductor layer is exposed on the bottom surface of the through hole by incident on the laser beam. 如申請專利範圍第1或2項所述之基板製造方法，其中，形成前述表層膜之製程包括：自噴墨頭向前述基板噴出前述表層膜的前述液態材料之噴出製程；及使塗佈於前述基板上之前述液態材料硬化之製程。The method for manufacturing a substrate according to item 1 or 2 of the scope of application for a patent, wherein the process of forming the surface layer film includes: a process of ejecting the liquid material of the surface layer film from an inkjet head to the substrate; A process for hardening the liquid material on the substrate. 如申請專利範圍第1或2項所述之基板製造方法，其中，在形成前述表層膜之製程之前，具有依據待形成前述通孔之位置來確定待形成前述表層膜之塗佈區域之製程；在形成前述表層膜之製程中，對前述基板之前述塗佈區域塗佈前述表層膜之液態材料。The method for manufacturing a substrate according to item 1 or 2 of the scope of patent application, wherein, prior to the process for forming the aforementioned surface layer film, there is a process for determining the coating area of the aforementioned surface layer film according to the position of the aforementioned through hole; In the process of forming the surface layer film, a liquid material of the surface layer film is applied to the coating area of the substrate. 如申請專利範圍第1或2項所述之基板製造方法，其中，在形成前述通孔之製程之後，具有去除殘留於前述基板上之前述表層膜之製程。The method for manufacturing a substrate according to item 1 or 2 of the scope of application for a patent, wherein after the process of forming the aforementioned through hole, there is a process of removing the surface layer film remaining on the substrate. 如申請專利範圍第1或2項所述之基板製造方法，其中，在形成前述通孔之製程中，前述絕緣層被貫穿而裸露前述內部導體層，並去除貫穿前述絕緣層之孔的開口部周圍的前述表層膜而裸露前述表層導體層之上表面；在形成前述通孔之製程之後，具有形成通路導體之製程，前述通路導體經由前述通孔內部，連接露出於前述通孔底面之前述內部導體層與前述表層導體層所露出之前述上表面。The method for manufacturing a substrate according to item 1 or 2 of the scope of patent application, wherein in the process of forming the through hole, the insulating layer is penetrated to expose the internal conductor layer, and an opening portion of the hole penetrating the insulating layer is removed. The surrounding surface layer film exposes the upper surface of the surface layer conductor layer; after the process of forming the through hole, there is a process of forming a via conductor, and the via conductor is connected to the inside exposed on the bottom surface of the through hole through the inside of the through hole. The conductor layer and the upper surface exposed by the surface layer conductor layer. 一種雷射加工裝置，其具有：塗佈機構，在包括以內部導體層、絕緣層及表層導體層的順序被堆積之層疊結構之基板上，塗佈表層膜的液態材料；雷射光源，輸出紅外區域的雷射束；導光光學系統，在藉由塗佈於前述基板上之前述液態材料而形成之前述表層膜上，以俯視觀察時，在前述表層膜之外圍線的內側配置射束點之條件下，使自前述雷射光源輸出之雷射束入射於前述表層膜；及控制裝置，控制來自前述雷射光源的前述雷射束的輸出及藉由前述塗佈機構進行之前述液態材料的塗佈；前述雷射束為高斯光束，去除與高斯形狀的射束輪廓周邊部分相對應之區域的表層膜，露出表層導體層的上表面。A laser processing device having a coating mechanism for coating a liquid material of a surface layer film on a substrate including a laminated structure stacked in the order of an internal conductor layer, an insulating layer, and a surface layer conductor layer; a laser light source, output Laser beam in the infrared region; light-guiding optical system, on the surface film formed by the liquid material coated on the substrate, in a plan view, a beam is arranged inside the peripheral line of the surface film The laser beam output from the laser light source is made incident on the surface film under the condition of a point, and a control device controls the output of the laser beam from the laser light source and the liquid state by the coating mechanism Coating of the material; the aforementioned laser beam is a Gaussian beam, and the surface layer film of the area corresponding to the peripheral portion of the beam profile of the Gaussian shape is removed to expose the upper surface of the surface layer conductor layer. 如申請專利範圍第7項所述之雷射加工裝置，其中，前述塗佈機構包括噴墨頭，其向前述基板噴出前述液態材料的液滴，前述控制裝置包括記憶裝置，其記憶顯示待入射前述雷射束之前述基板內的位置之位置資料，依據前述位置資料，計算出在前述基板的表面中待塗佈前述液態材料之塗佈區域，控制自前述噴墨頭噴出之前述液態材料，以便在前述塗佈區域塗佈前述液態材料。The laser processing device according to item 7 in the scope of the patent application, wherein the coating mechanism includes an inkjet head that ejects droplets of the liquid material to the substrate, and the control device includes a memory device whose memory indicates that it is to be incident. According to the position data of the position in the substrate of the laser beam, according to the position data, calculate a coating area of the liquid material to be coated on the surface of the substrate, and control the liquid material ejected from the inkjet head. In order to apply the liquid material to the coating area.
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JP7154147B2 (en) * 2019-01-31 2022-10-17 京セラ株式会社 Method for manufacturing printed wiring board

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KR101840932B1 (en) 2018-03-21
KR20160142779A (en) 2016-12-13
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CN106255319A (en) 2016-12-21
JP2016225554A (en) 2016-12-28
TW201701741A (en) 2017-01-01

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