TWI629791B - 主動元件結構及其製作方法 - Google Patents
主動元件結構及其製作方法 Download PDFInfo
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- TWI629791B TWI629791B TW104111798A TW104111798A TWI629791B TW I629791 B TWI629791 B TW I629791B TW 104111798 A TW104111798 A TW 104111798A TW 104111798 A TW104111798 A TW 104111798A TW I629791 B TWI629791 B TW I629791B
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- Prior art keywords
- layer
- oxide channel
- high energy
- gate
- active device
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- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 305
- 238000000137 annealing Methods 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 8
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract description 5
- 238000005286 illumination Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 17
- 238000000151 deposition Methods 0.000 description 16
- 239000007769 metal material Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 229910000489 osmium tetroxide Inorganic materials 0.000 description 2
- 239000012285 osmium tetroxide Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
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- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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Abstract
一種主動元件結構及製作方法,其中主動元件結構包括閘極、氧化物通道層、源極、汲極、與高能量絕緣層。氧化物通道層與閘極上下疊置,其中氧化物通道包括一上層與一下層,且上層的晶格結構與下層的晶格結構不同。源極及汲極皆與氧化物通道層接觸,其中源極與汲極以氧化物通道層相隔一間距並定義出一通道區。高能量與絕緣層氧化物通道層的上層接觸。氧化物通道層的上層結構可以提供擋光效果,進而改善氧化物通道層照光而產生的臨界電壓偏移問題。
Description
本發明是有關於一種主動元件及其製造方法,且特別是有關於一種具有氧化物通道層之主動元件結構及其製作方法。
近年來,使用銦(In)-鎵(Ga)-鋅(Zn)-氧(O)系(以下稱作IGZO)的氧化物半導體薄膜作為薄膜電晶體的通道層已有許多研究與實際的應用開發。然而,氧化物半導體薄膜雖然可作為薄膜電晶體的通道層,但氧化物半導體薄膜受光照射之後,電性特性會發生改變(例如,載子容易躍遷至導電帶),致使薄膜電晶體的臨界電壓(threshold voltage)發生偏移。故使用氧化物半導體薄膜作為通道層的主動元件會有穩定性不佳的問題。
本發明提供一種主動元件結構,其具有較佳的穩定性。
本發明提供一種主動元件結構的製作方法,其可以製作
出穩定性較佳的主動元件結構。
本發明提供一種主動元件結構,包括閘極、氧化物通道層、源極、汲極以及高能量絕緣層。氧化物通道層與閘極上下疊置,其中氧化物通道層包括上層與下層,且上層的晶格結構與下層的晶格結構不同。源極及汲極皆與氧化物通道層接觸,其中源極與汲極相隔一間距以在氧化物通道層定義出一通道區。高能量絕緣層接觸氧化物通道層的上層。
在本發明之一實施例中,上述高能量絕緣層的材質包括氧化矽。
在本發明之一實施例中,上述上層的厚度與下層的厚度的比為1:5至1:9。
在本發明之一實施例中,上述上層的晶格結構為體心立方(BCC)結晶或面心立方(FCC)結晶。
在本發明之一實施例中,上述下層為非晶質的晶格結構。
在本發明之一實施例中,上述上層的氧含量低於下層的氧含量。
在本發明之一實施例中,上述主動元件結構更包括閘極絕緣層,其中閘極絕緣層位於閘極與氧化物通道層之間,且氧化物通道層、源極與汲極位於高能量絕緣層與閘極絕緣層之間。
在本發明之一實施例中,上述主動元件結構更包括保護層,其中高能量絕緣層位於閘極與氧化物通道層之間。
在本發明之一實施例中,上述氧化物通道層的上層與下
層的材質包括銦鎵鋅氧化物。
在本發明之一實施例中,上述氧化物通道層的上層的面積大致相同該氧化物通道層與高能量絕緣層的接觸面積。
本發明提供一種主動元件結構的製作方法,包括先形成閘極、氧化物通道層、源極與汲極,其中閘極與氧化物通道層上下疊置。源極與汲極皆與氧化物通道層接觸,並相隔一間距以在氧化物通道層定義出一通道區。再來,進行高能量沉積步驟以形成接觸氧化物通道層的高能量絕緣層。高能量沉積步驟的能量密度由0.14瓦/平方公分(W/cm2)至0.37瓦/平方公分(W/cm2)。之後,進行退火步驟使氧化物通道層包括接觸於高能量絕緣層的上層與下層,且上層的晶格結構與下層的晶格結構不同。退火步驟的製程溫度由200℃至300℃。
在本發明之一實施例中,上述高能量沉積步驟的能量密度由0.21瓦/平方公分(W/cm2)至0.28瓦/平方公分(W/cm2)。
在本發明之一實施例中,上述退火步驟在大氣環境下進行。
在本發明之一實施例中,上述退火步驟的製程溫度為230℃,且進行時間為120分鐘。
在本發明之一實施例中,上述退火步驟在高能量沉積步驟之後進行。
在本發明之一實施例中,上述高能量絕緣層形成於閘極與氧化物通道層之間。
在本發明之一實施例中,上述主動元件結構的製作方法更包括於閘極與氧化物通道層之間形成閘極絕緣層。氧化物通道層、源極與汲極皆形成於閘極絕緣層與高能量絕緣層之間。
在本發明之一實施例中,上述高能量絕緣層的材質包括氧化矽。
基於上述,本發明之主動元件結構及其製作方法可讓接觸於高能量絕緣層的氧化物通道層劃分為不同晶格結構的上層與下層,且上層可以提供阻擋光線的作用。藉此,本發明實施例的設計可改善氧化物通道層受光照射後載子(例如電子)提早跳躍至導電帶的情形。換言之,本發明實施例的主動元件結構不容易產生臨界電壓的偏移,進而使主動元件結構具有較佳之穩定性。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
10、10’、10”、20、30、40‧‧‧主動元件結構
100‧‧‧基板
102、102’、102”、302‧‧‧閘極
104、104’、104”‧‧‧閘極絕緣層
106、106’、106”、206、306、406‧‧‧氧化物通道層
106B、106B’、106B”、206B、306B、406B‧‧‧下層
106S1‧‧‧第一側
106S2‧‧‧第二冊
106T、106T’、106T”、206T、306T、406T‧‧‧上層
108‧‧‧金屬材料層
108’、108”‧‧‧電極
108a、208a、308a、408a‧‧‧源極
108b、208b、308b、408b‧‧‧汲極
110‧‧‧圖案化光阻層
110A‧‧‧開口
112、112’、112”、312‧‧‧高能量絕緣層
314‧‧‧保護層
AN‧‧‧箭頭
CH‧‧‧通道區
E、F‧‧‧區域
G‧‧‧間距
P‧‧‧晶格點
圖1A至圖1F是依照本發明之一實施例之一種主動元件結構的製作流程示意圖。
圖2A為一具體範例的主動元件結構的局部區域的穿透式電子顯微照片。
圖2B為圖2A中區域E的局部放大圖。
圖2C為圖2B中氧化物通道層的上層經由穿透式電子顯微鏡
所分析的繞射圖案。
圖2D為另一具體範例的主動元件結構的局部區域的穿透式電子顯微照片。
圖2E為圖2D中區域F的局部放大圖。
圖2F為圖2E中氧化物通道層的上層經由穿透式電子顯微鏡所分析的繞射圖案。
圖3為本發明第二實施例之主動元件結構的剖面示意圖。
圖4為本發明第三實施例之主動元件結構的剖面示意圖。
圖5為本發明第四實施例之主動元件結構的剖面示意圖。
圖1A至圖1F是依照本發明一實施例的主動元件的製造流程示意圖。首先,請參照圖1A。提供基板100,並於基板100上形成閘極102。在本實施例中,基板100例如為硬質基板(rigid substrate)或可撓式基板(flexible substrate)等。舉例而言,基板100的材質可為玻璃、塑膠、複合材質或其他可以提供支撐且可製作板狀結構的材質。此外,閘極102的材質為導電材料。舉例而言,閘極102的材質可為單層或多層堆疊之金屬材料,例如選自由銅(Copper,Cu)、鉬(Molybdenum,Mo)、鈦(Titanium,Ti)、鋁(Aluminum,Al)、鎢(Tungsten,W)、銀(Silver,Ag)、金(Gold,Au)及其合金所組成之族群中的至少之一。在本實施例中,閘極102可透過微影蝕刻製程來圖案化金屬材料而製作,但
不須以此為限。
接著,請參照圖1B。於基板100以及閘極102上形成閘極絕緣層104,其中閘極絕緣層104同時覆蓋基板100以及閘極102。也就是說,閘極102位於基板100與閘極絕緣層104之間。在本實施例中,閘極絕緣層104可為單層結構或多層堆疊的複合結構,且閘極絕緣層104之材質例如是氮化矽、氧化矽、氮氧化矽或其他合適之介電材料。
請繼續參照圖1B。在完成閘極絕緣層104的製作之後,在閘極絕緣層104上形成氧化物通道層106。氧化物通道層106與閘極102上下疊置且藉由閘極絕緣層104彼此分隔而不接觸。也就是說,氧化物通道層106投影至基板100上的面積重疊於閘極102投影至基板100上的面積。在本實施例中,氧化物通道層106的材質可包括含錫、銦、鎵、鋅中至少一者的氧化物。以下將以氧化物通道層106的材質為銦錫鋅氧化物為例說明,但本發明不限定於此。
然後,請參照圖1C。在完成氧化物通道層106的製作後,於氧化物通道層106上形成金屬材料層108。金屬材料層108可以為單層結構或多層堆疊的複合結構,且其材質例如是鋁(Al)、鉬(Mo)、銀(Ag)、鈀(Palladium,Pd)或其合金等金屬材料。金屬材料層108之材質可與閘極102之材質相同或不同。
之後,請參照圖1D。在金屬材料層108上形成圖案化光阻層110,此圖案化光阻層110是用以定義後續欲形成之源極108a
與汲極108b之圖案。如圖1D所示,圖案化光阻層110配置在金屬材料層108上,且圖案化光阻層110對應於氧化物通道層106上方具有一開口110A以暴露出部分的金屬材料層108。
其後,請參照圖1D與圖1E。在形成圖案化光阻層110之後,藉由蝕刻方式移除未被圖案化光阻層110所覆蓋的金屬材料層108,以完成源極108a與汲極108b的製作。在此,如圖1E所示,源極108a與汲極108b相隔一間距G,以在對應於間距G的氧化物通道層106定義出一通道區CH。具體而言,在本發明之一實施例中,源極108a以及汲極108b可藉由濕式蝕刻劑(etchant)蝕刻所形成,濕式蝕刻劑例如為硫酸、磷酸、硝酸與醋酸或至少上述二者之混合。在其他實施例中,濕式蝕刻劑亦可為鋁酸蝕刻液。
由圖1E可知,源極108a與汲極108b都接觸於氧化物通道層106並且位於通道區CH的兩側。閘極102位於氧化物通道層106的第一側106S1,源極108a與汲極108b位於氧化物通道層106的第二側106S2,且第一側106S1與第二側106S2相對。同時,閘極102位於氧化物通道層106與基板100之間而構成底閘型結構。
之後,請參照圖1F,在源極108a及汲極108b形成之後,進行高能量沉積步驟以於氧化物通道層106上形成高能量絕緣層112。在本實施例中,所謂高能量沉積步驟的能量密度可以落在0.14瓦/平方公分(W/cm2)至0.37瓦/平方公分(W/cm2)之間,
或是落在0.21瓦/平方公分(W/cm2)至0.28瓦/平方公分(W/cm2)之間。高能量沉積步驟是採用化學氣相沉積法(CVD),且化學氣相沉積法中的反應氣體包括氧化二氮(N2O)與四氧化矽(SiH4)。同時,高能量沉積步驟中的氧化二氮(N2O)與四氧化矽(SiH4)之體積比例如落在55~70之間。因此,高能量絕緣層112的材質包括氧化矽、氮氧化矽或其組合。
在本實施例中,於高能量沉積步驟之後更進行退火步驟(以箭頭AN表示),其中退火步驟的製程溫度例如落在200℃至300℃之間,且退火步驟是在大氣環境下進行。高能量沉積步驟與退火步驟的執行,使得氧化物通道層106中接觸於高能量絕緣層112的部分接受到足夠的能量使晶格結構發生變化。因此,接觸於高能量絕緣層112的氧化物通道層106的結構會發生變化而劃分成上層106T與下層106B,其中上層106T的分布面積大致上相同於高能量絕緣層112與氧化物通道層106的接觸面積。上層106T的晶格結構與下層106B的晶格結構不同,並且上層106T相較於下層106B更接近高能量絕緣層112,也就是說,上層106T會位於下層106B與高能絕緣層112之間。
氧化物通道層106的上層106T與下層106B的材質都是銦錫鋅氧化物,不過上層106T的含氧量低於下層106B。上層106T的厚度與下層106B的厚度的比為1:5至1:9。在本實施例中,上層106T的結晶度高於下層106B。舉例而言,氧化物通道層106的上層106T的晶格結構例如為體心立方(BCC)結晶或面心立方
(FCC)結晶的結構,下層106B則為非晶質的晶格結構。
圖2A為一具體範例的主動元件結構的局部區域的穿透式電子顯微照片,圖2B為圖2A中區域E的局部放大圖,而圖2C為圖2B中氧化物通道層的上層經由穿透式電子顯微鏡所分析的繞射圖案。具體來說,圖2A中顯示了主動元件結構10’的閘極102’、閘極絕緣層104’、氧化物通道層106’、作為源極或汲極的電極108’以及高能量絕緣層112’。在此具體範例中,高能量絕緣層112’的沉積步驟中,能量密度為0.21瓦/平方公分(W/cm2)。製作完高能量絕緣層112’之後所執行的退火步驟的製程溫度約為230℃,且退火步驟的進行時間約為120分鐘。由圖2A至圖2C可知,特別是圖2B,接觸於高能量絕緣層112’的氧化物通道層106’明顯劃分為上下兩層其中上層106T’接觸於高能量絕緣層112’且具有較不平整的結構,而下層106B’較接近於閘極絕緣層104’且具有較為平整的結構。由圖2C的繞射圖案中所呈現的晶格點P更可知道,上層106T’的結晶晶格大致上為體心立方(BCC)結晶。
圖2D為另一具體範例的主動元件結構的局部區域的穿透式電子顯微照片,圖2E為圖2D中區域F的局部放大圖,而圖2F為圖2E中氧化物通道層的上層經由穿透式電子顯微鏡所分析的繞射圖案。具體來說,圖2D中顯示了主動元件結構10”的閘極102”、閘極絕緣層104”、氧化物通道層106”、作為源極或汲極的電極108”以及高能量絕緣層112”。在此具體範例中,高能量絕緣層112”的沉積步驟中,能量密度為0.28瓦/平方公分(W/cm2)。
製作完高能量絕緣層112”之後所執行的退火步驟的製程溫度約為230℃,且退火步驟的進行時間約為120分鐘。由圖2D至圖2F可知,特別是圖2E,接觸於高能量絕緣層112”的氧化物通道層106”明顯劃分為上下兩層,其中上層106T”接觸於高能量絕緣層112”且具有較不平整的結構,而下層106B”較接近於閘極絕緣層104”且具有較為平整的結構。由圖2F的繞射圖案中所呈現的晶格點P更可知道,上層106T”的結晶晶格大致上為面心立方(FCC)結晶。
由圖2A至圖2F得知,當依序進行高能量沉積步驟以及退火步驟後,氧化物通道層106、106’或106”中接近高能量氧化層112、112’或112”的晶格結構會發生變化而構成不同晶格結構的上層與下層。由於進行高能量沉積步驟以及退火步驟後形成的上層106T、106T’或106T”具有結晶度較高的結晶相,可以阻擋光線。因此,本實施例的主動元件結構10、10’或10”中氧化物通道層106、106’或106”不容易因照光而使電子提早跳躍至導電帶。藉此,主動元件結構10、10’或10”不容易發生臨界電壓的偏移,進而具有較佳的穩定性。
圖3是本發明第二實施例之主動元件結構的剖面示意圖。本實施例為底閘型結構的另一種設計。請參照圖3,主動元件結構20包括在基板100上形成的閘極102、閘極絕緣層104、氧化物通道層206、源極208a、汲極208b、以及高能量絕緣層112。在此,氧化物通道206與閘極102上下疊置。源極208a與汲極208b
皆與氧化物通道層206接觸,並以氧化物通道層206相隔一間距G而定義出一通道區CH。並且,源極208a與汲極208b位於氧化物通道層206與閘極102之間。高能量絕緣層112則覆蓋氧化物通道層206。本實施例中,閘極102、源極208a與汲極208b都位在氧化物通道層206與基板100之間。
主動元件結構20的製作方法大致上相同於前述主動元件結構10的製作方法,其中主動元件結構20的製作過程中,是先在閘極絕緣層104上製作源極208a與汲極208b,再接著製作氧化物通道層206。此時,製作源極208a與汲極208b所使用的蝕刻劑不會影響氧化物通道層206。因此,有助於降低氧化物通道層206在製作過程中接觸到蝕刻劑的機率。另外,高能量絕緣層112的製作方法如所述,並且高能量絕緣層112製作完成之後,會進行依退火步驟。因此,氧化物通道層206包括上層206T與下層206B且上層206T位於高能量絕緣層112與下層206B之間,其中上層206T的晶格結構不同於下層206B的晶格結構。特別是,上層206T的晶格結構具有較高的結晶度,而下層206B的晶格結構具有較低的結晶度。因此,在本實施例中,上層206T可以提供遮光效果以降低氧化物通道層206在主動元件結構20中發生照光而使電子提早跳躍至導電帶的現象。藉此,主動元件結構20不容易發生臨界電壓的偏移,進而具有較佳的穩定性。
圖4是本發明第三實施例之主動元件結構的剖面示意圖。請參照圖4本實施例為頂閘型(top gate)結構的一種設計,
也就是主動元件結構30的閘極302位於氧化物通道層306上方。具體來說,主動元件結構30包括在基板100上形成的源極308a、汲極308b、氧化物通道層306、高能量絕緣層312、閘極302以及保護層314。閘極302與氧化物通道層306上下疊置。源極308a與汲極308b皆與氧化物通道層306接觸,並以氧化物通道層306相隔一間距G以定義出一通道區CH。高能量絕緣層312位於閘極302與氧化物通道層306之間。保護層314形成於閘極302上方。此時,保護層314覆蓋閘極302與高能量絕緣層312。在本實施例中,高能量絕緣層312位於閘極302與氧化物通道層306之間,因此高能量絕緣層312可以視為閘極絕緣層。
主動元件結構30的製作方法中,是先在基板100上製作源極308a與汲極308b,再接著製作氧化物通道層306、閘極302與保護層314,其中高能量絕緣層312的製程條件可以參照前述實施例中高能量絕緣層112的製程條件。在高能量絕緣層312製作完成後以及製作閘極302之前,本實施例的製作方法會進行退火步驟,其中退火步驟的具體製程條件可以參照圖1F的相關說明。並且,氧化物通道層306可在執行完高能量沉積步驟與退火步驟之後劃分成上層306T與下層306B且上層306T位於高能量絕緣層312與下層306B之間,其中上層306T的晶格結構不同於下層306B的晶格結構。特別是,上層306T的晶格結構具有較高的結晶度,而下層306B的晶格結構具有較低的結晶度。因此,在本實施例中,上層306T可以提供遮光效果以降低氧化物通道層306在主動
元件結構30中發生照光而使電子提早跳躍至導電帶的現象。藉此,主動元件結構30不容易發生臨界電壓的偏移,進而具有較佳的穩定性。
圖5是本發明第四實施例之主動元件結構的剖面示意圖。本實施例為頂閘型結構的另一種設計。請參照圖5,主動元件結構40的元件配置關係大致相似於主動元件結構30,惟氧化物通道層406的製作步驟優先於源極408a與汲極408b的製作步驟,因此主動元件結構40的源極408a與汲極408b位於氧化物通道層406與高能量絕緣層312之間。氧化物通道層406如前述實施例般可以劃分成結晶度較高的上層406T與結晶度較低的下層406B,且上層406T位於下層406B與作為閘極絕緣層的高能量絕緣層312之間。因此,主動元件結構40的各構件的製作方法、配置關係與功能可以參照前述實施例的描述而不另贅述。
綜上所述,在本發明的實施例的主動元件結構中,由於在製作氧化物通道層後依序進行高能量沉積步驟以及退火步驟來製作接觸氧化物通道層的高能量絕緣層,使只接觸於高能量絕緣層的氧化物通道層的晶格結構局部的改變排列而劃分成上下兩層,其中上層結構較接近高能量絕緣層並具有結晶度較佳的晶格結構。此時,因為結晶度較佳的上層可以提供擋光效果,進而有效改善氧化物通道層因照光而載子容易躍遷所導致主動元件結構的臨界電壓的偏移問題,以提高主動元件結構的穩定性。
雖然本發明已以實施例揭露如上,然其並非用以限定本
發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
Claims (16)
- 一種主動元件結構,包括:一閘極;一氧化物通道層,與該閘極上下疊置,其中該氧化物通道層包括一上層與一下層,且該上層的晶格結構與該下層的晶格結構不同,其中該上層的晶格結構為體心立方(BCC)結晶或面心立方(FCC)結晶,其中該上層的氧含量低於該下層的氧含量;一源極,接觸該氧化物通道層;一汲極,接觸該氧化物通道層,其中該源極與該汲極相隔一間距以在該氧化物通道層定義出一通道區;以及一高能量絕緣層,接觸該氧化物通道層的該上層。
- 如申請專利範圍第1項所述之主動元件結構,其中該高能量絕緣層的材質包括氧化矽。
- 如申請專利範圍第1項所述之主動元件結構,其中該上層的厚度與該下層的厚度的比為1:5至1:9。
- 如申請專利範圍第1項所述之主動元件結構,其中該下層為非晶質的晶格結構。
- 如申請專利範圍第1項所述之主動元件結構,更包括一閘極絕緣層,其中該閘極絕緣層位於該閘極與該氧化物通道層之間,且該氧化物通道層、該源極與該汲極位於該高能量絕緣層與該閘極絕緣層之間。
- 如申請專利範圍第1項所述之主動元件結構,更包括一保 護層,其中該高能量絕緣層位於該閘極與該氧化物通道層之間,且該保護層覆蓋該閘極與該高能量絕緣層。
- 如申請專利範圍第1項所述之主動元件結構,其中該氧化物通道層的該上層與該下層的材質包括銦鎵鋅氧化物。
- 如申請專利範圍第1項所述之主動元件結構,其中該氧化物通道層的該上層的面積大致相同於該氧化物通道層與該高能量絕緣層的接觸面積。
- 一種主動元件結構的製作方法,包括:形成一閘極、一氧化物通道層、一源極與一汲極,其中該閘極與該氧化物通道層上下疊置,該源極與該汲極接觸該氧化物通道層並相隔一間距以在該氧化物通道層定義出一通道區;進行一高能量沉積步驟以形成接觸該氧化物通道層的一高能量絕緣層,其中該高能量沉積步驟的能量密度由0.14瓦/平方公分(W/cm2)至0.37瓦/平方公分(W/cm2);以及進行一退火步驟,以使該氧化物通道層包括接觸於該高能量絕緣層的一上層與一下層,且該上層的晶格結構與該下層的晶格結構不同,其中該上層的晶格結構為體心立方(BCC)結晶或面心立方(FCC)結晶,其中該退火步驟的製程溫度由200℃至300℃。
- 如申請專利範圍第9項所述之主動元件結構的製作方法,其中該高能量沉積步驟的能量密度由0.21瓦/平方公分(W/cm2)至0.28瓦/平方公分(W/cm2)。
- 如申請專利範圍第9項所述之主動元件結構的製作方 法,其中該退火步驟在大氣環境下進行。
- 如申請專利範圍第9項所述之主動元件結構的製作方法,其中該退火步驟的製程溫度為230℃,且進行時間為120分鐘。
- 如申請專利範圍第9項所述之主動元件結構的製作方法,其中該退火步驟在該高能量沉積步驟之後進行。
- 如申請專利範圍第9項所述之主動元件結構的製作方法,其中該高能量絕緣層形成於該閘極與該氧化物通道層之間。
- 如申請專利範圍第9項所述之主動元件結構的製作方法,更包括形成一閘極絕緣層於該閘極與該氧化物通道層之間,且該氧化物通道層、該源極與該汲極皆形成於該閘極絕緣層與該高能量絕緣層之間。
- 如申請專利範圍第9項所述之主動元件結構的製作方法,其中該高能量絕緣層的材質包括氧化矽。
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