TWI629785B - 高電壓積體電路的高電壓終端結構 - Google Patents
高電壓積體電路的高電壓終端結構 Download PDFInfo
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Abstract
高電壓電路的終端結構包括P型基底。磊晶層在基底上。N型摻雜結構在磊晶層中,與基底接觸。P型摻雜結構在N型摻雜結構上,與陽極端連接。基底、N導電型摻雜結構以及P導電型摻雜結構,在垂直於基底的方向構成PNP路徑,其中NP提供自舉式二極體的功能,在水平方向環繞上橋電路。陰極在磊晶層中。N型磊晶摻雜區域在磊晶層中,與基底接觸,於PNP路徑與N型陰極電極結構之間,也環繞上橋電路。閘極結構在N導電型磊晶摻雜區域上,於P型摻雜結構與N型陰極電極結構之間。P型基極摻雜結構在磊晶層中,與N型摻雜結構,提供基底電壓給基底。
Description
本發明是有關於一種半導積體電路,且特別是有關於高電壓積體電路的高電壓終端結構。
提高能源效率越來越被重視,其中可以降低功耗的離線式功率轉換器也日趨重要。在因應市場變化,具有更高性能且符合經濟效益的高電壓積體電路 (high-voltage integrated circuit, HVIC) 晶片已逐漸被採用,使得設計人員實現高效能電源轉換器時,有靈活的解決方案。
高電壓積體電路晶片其作用例如是閘極驅動器,例如用來推動功率半導體場效電晶體(MOSFET)或絕緣閘雙極性電晶體(IGBT),其中一般還會使用自舉式二極體(bootstrap diode),電容和電阻等形成自舉式電路,以上橋電路(High-Side circuit)的MOSFET 的源極電壓(Vs)的浮動位準為基準,提供HVIC的位準。
高電壓積體電路晶片還會包含下橋電路 (Low-Side circuit),是作在低電壓的低電壓電路。因此,在上橋電路與下橋電路之間還包括電壓切換電路(level shifter)。由於上橋電路是高電壓的操作,其電壓例如可以是600V的操作,因此上橋電路的周圍還會有高電壓終端 (high voltage junction terminating,HVJT) 結構,以防止上橋電路的電壓打穿,而造成其它低電壓電路的損壞。
具有高電壓終端結構的高電壓積體電路晶片都會包含自舉式電路以及高電壓終端結構,如何簡化高電壓積體電路晶片的結構,也是設計人員所需要考慮的因素其一。
本發明提供高電壓積體電路晶片的高電壓終端結構,可以將舉式二極體與高電壓終端結構整合,簡化電路結構。
依據本發明的一實施例的高電壓終端結構,其適用於高電壓積體電路中,其中高電壓積體電路包括上橋電路、下橋電路以及電壓切換電路連接於該上橋電路與該下橋電路之間,進行電壓切換。該高電壓終端結構包括基底,此基底是P導電型。磊晶層形成於該基底上。N導電型摻雜結構在該磊晶層中,與該基底接觸。P導電型摻雜結構在該N導電型摻雜結構上,用以與陽極端連接。該基底、該N導電型摻雜結構以及該P導電型摻雜結構,在垂直於該基底的方向構成PNP路徑,其中該P導電型摻雜結構與該N導電型摻雜結構提供自舉式二極體的功能,在該基底的水平方向環繞該上橋電路。N導電型陰極電極結構,在該磊晶層中,用以與陰極端連接。N導電型磊晶摻雜區域在該磊晶層中,與該基底接觸,於該PNP路徑與該N導電型陰極電極結構之間,也環繞該上橋電路。閘極結構在該N導電型磊晶摻雜區域上,於該P導電型摻雜結構與該N導電型陰極電極結構之間。P導電型基極摻雜結構,在該磊晶層中,與該N導電型摻雜結構相鄰,用以提供基底電壓給該基底。
於本發明的一實施例,該PNP路徑的結構包括第一N導電型高電壓井區,在該磊晶層中與該基底接觸。P導電型井區在該第一N導電型高電壓井區中。P導電型接觸端區,在該P導電型井區中,用以與該陽極端連接。
於本發明的一實施例,在該第一N導電型高電壓井區內的底部更包括N導電型埋入層,與該基底接觸,但是與該P導電型基極摻雜結構有一距離。
於本發明的一實施例,該N導電型陰極電極結構包括第一N導電型摻雜區,在該N導電型磊晶摻雜區域中,不與該基底接觸。第二N導電型摻雜區在該第一N導電型摻雜區中。N導電型接觸端區,在該第二N導電型摻雜區上,用以與該陰極端連接。 於本發明的一實施例,該N導電型陰極電極結構包括。第二N導電型高電壓摻雜井區,在該N導電型磊晶摻雜區域中,並且與該基底接觸。第一N導電型摻雜區,在該第二N導電型高電壓摻雜井區中,不與該基底接觸。第二N導電型摻雜區在該第一N導電型摻雜區中。N導電型接觸端區,在該第二N導電型摻雜區上,用以與該陰極端連接。
於本發明的一實施例,基底上也形成有P導電型埋入層。該PNP路徑的結構包括:第一N導電型高電壓井區,在該磊晶層中與該基底以及該P導電型埋入層接觸。P導電型井區在該第一N導電型高電壓井區中。P導電型接觸端區,在該P導電型井區中,用以與該陽極端連接。 於本發明的一實施例,該N導電型陰極電極結構包括第一N導電型摻雜區,在該N導電型磊晶摻雜區域中,不與該基底接觸。第二N導電型摻雜區在該第一N導電型摻雜區中。N導電型接觸端區,在該第二N導電型摻雜區上,用以與該陰極端連接。 於本發明的一實施例,該N導電型陰極電極結構包括第二N導電型高電壓摻雜井區,在該N導電型磊晶摻雜區域中,並且與該基底接觸。第一N導電型摻雜區在該第二N導電型高電壓摻雜井區中,不與該基底接觸。第二N導電型摻雜區在該第一N導電型摻雜區中。N導電型接觸端區在該第二N導電型摻雜區上,用以與該陰極端連接。
於本發明的一實施例,該PNP路徑的結構包括N導電型埋入層,形成於該基底內的表層。P導電型高電壓井區,在該磊晶層中與該N導電型埋入層接觸。P導電型接觸端區,在該P導電型井區中,用以與該陽極端連接。第一N導電型高電壓井區在磊晶層中與該P導電型高電壓井區相鄰,且與該N導電型埋入層接觸,其中該第一N導電型高電壓井區在該P導電型高電壓井區與該P導電型基極摻雜結構之間。
於本發明的一實施例,該基底上也形成有P導電型埋入層與該N導電型埋入層相鄰。
於本發明的一實施例,所述的高電壓終端結構更包括多個絕緣結構在該磊晶層的表層,以隔離該P導電型摻雜結構、該N導電型陰極電極結構、P導電型基極摻雜結構以及該閘極結構。
於本發明的一實施例,該P導電型基極摻雜結構包括P導電型埋入層,形成在該基底內的表層。P導電型高電壓井區,與該PNP路徑的結構相鄰。P導電型摻雜區域,在該P導電型高電壓井區內,用以接收該基底電壓。
於本發明的一實施例,該陽極端的電壓會依照操作狀態變動。
依據本發明的一實施例的高電壓積體電路,設置在P導電型的基底上。該高電壓積體電路包括上橋電路、下橋電路以及電壓切換電路連接於該上橋電路與該下橋電路之間,進行電壓切換。該高電壓積體電路包括高電壓終端結構,環繞該上橋電路,其中在該高電壓終端結構有陽極端,其中在垂直於該基底的方向,從該陽極端到該基底包括PNP摻雜結構。
基於上述,本發明在高電壓終端結構中,用以連接到陽極端的P導電型摻雜結構,到基底之間建立一個PNP的路徑,其中在P導電型的該基底上由P導電型的陽極端與加入的N導電型結構達到整合自舉式二極體的功能的結構。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
本發明考慮高電壓積體電路的架構,提出其高電壓終端結構可以整合自舉式二極體,簡化高電壓積體電路的架構。自舉式二極體也不會佔用可利用的電路面積。
圖1是依照本發明一實施例,高電壓積體電路的架構示意圖。參閱圖1,高電壓積體電路(HVIC)100,例如包括操作於低電壓的下橋電路102; 操作於高電壓的上橋電路104以及電壓切換電路106連接於上橋電路104與下橋電路102之間,因應上橋電路104與下橋電路102的操作進行電壓切換。因此,電壓切換電路(level shifter)106例如是可以包含設置(set)切換器106a與重置(reset)切換器106b。由於上橋電路104是動態操作在高電壓,例如可以高達600V的操作電壓,或是甚至更高,因此在上橋電路104的周圍,以半導結構的電路,會有高電壓終端結構108,以防止上橋電路104的高壓穿透結構,而進入下橋電路102造成損壞。
另外由於上橋電路104需要充電材能達到所需要的高電壓,因此需要有自舉式電路來輔助充放電。本發明,針對構成自舉式電路中的自舉式二極體,將自舉式二極體整合到高電壓終端結構108中,因此自舉式二極體不需要額外佔用電路面積。關於高電壓積體電路(HVIC)100的運作,對於具有本領域通常知識者是可以了解其基本運作機制,本發明不做更詳細的描述。以下的描述是關於如何將自舉式二極體整合到高電壓終端結構108中的半導體結構。
圖2是依照本發明一實施例,一種高電壓終端結構的剖面示意圖。參閱圖2,本發明先考慮沒有整合自舉式二極體的高電壓終端結構,以研發出可以整合自舉式二極體的高電壓終端結構。 高電壓終端結構是製作在P導電型的基底(P-SUB)200上,以基底(P-SUB)200為基礎。在基底200上先形成矽的磊晶層(epitaxial layer)202。在磊晶層202的表層,會形成多個隔離結構214,當作元件結構之間的隔離。高電壓終端結構的基本架構也是MOS的結構,會包含源極(對應標示208的位置)、閘極(對應標示212的位置)以及汲極 (對應標示210的位置)。
就半導體結構而言,在磊晶層202中可以利用摻雜製程,完成所需要的摻雜結構。前述尚未整合自舉式二極體的高電壓終端結構包括摻雜成N導電型的磊晶摻雜區域(N-EPI)206,其與基底200接觸,而在磊晶摻雜區域(N-EPI)206的上方會有閘極結構212,由隔離結構214隔離。磊晶摻雜區域(N-EPI)206對應圖1的架構,是環繞上橋電路104,受閘極結構212的控制,達到終止高電壓的效果。
在磊晶層202相鄰於的磊晶摻雜區域(N-EPI)206的區域會被摻雜P導電型的摻子(impurity)而形成P導電型高電壓井區(HVPW) 204。先描述用以與陽極端連接,當作源極的摻雜結構,其包括由P導電型接觸端區(P+)208以及P導電型井區(IPW) 218所構成。此處「P+」表示可為P導電型重摻雜區。於此,圖2的結構是高電壓終端(HVJT)的基礎架構,尚未整合自舉式二極體的高電壓終端結構。因應要整合自舉式二極體的結構,例如後續的圖3所示,以圖2的HVJT結構為基礎,可以加入N導電型高電壓井區(HVNW) 220,則P導電型井區(IPW,Isolated P-Well) 218可以進一步形成在N導電型高電壓井區(HVNW) 220中。P導電型接觸端區(P+)208形成在P導電型井區(IPW) 218中,用以接收陽極電壓。於圖3會有進一步說明。陽極電壓,例如是系統的低電壓(Vcc),會因應上橋電路與下橋電路的操作需要而在電壓範圍內變化,例如在0V到25V之間變化。於此,如果僅是高電壓終端(HVJT)的作用,則如圖2所示僅需要P導電型接觸端區(P+)208與P導電型高電壓井區(HVPW) 204連接即可, 而P導電型井區(IPW) 218是可以不需要另外形成。
另外,用以與陰極端連接,也就是汲極端的N導電型陰極電極結構210是形成在磊晶層202中,且是位於磊晶摻雜區域(N-EPI)206中,其例如包括N導電型摻雜區210c在磊晶摻雜區域(N-EPI)206中,稱為N-DRIFT區。在N導電型摻雜區210c也還包括N導電型井區210b以及在N導電型井區210b上的N導電型接觸端區(N+)210a,用以與陰極端連接。閘極結構212與N導電型摻雜區210c之間有隔離結構214,電性隔離。N導電型陰極電極結構210的摻雜濃度由N導電型接觸端區(N+)210a開始例如是階梯方式漸降,最後會與基底200耦接。此處「N+」表示可為N導電型重摻雜區。然而,N導電型陰極電極結構210不限於所舉的上述結構,而只要能接收陰極電壓即可。
再者,關於要提供基底電壓給基底200的P導電型基極摻雜結構216,是形成於P導電型高電壓井區(HVPW) 204中,例如是由多層不同作用的摻雜區域,例如P+摻雜區域216a、P-FIELD摻雜區域216b、P-WELL摻雜區域 216c、PDRIFT摻雜區域216d等所標示,依照摻子的濃度變化而到達基底200,其中P+摻雜區域216a當作P導電型接觸端區,是高濃度的P導電型摻雜區,接收基底電壓,而提供給基底200。然而,P導電型基極摻雜結構216不限於所舉的上述結構,而只要能接收基底電壓而提供給基底200即可。
圖2的結構是尚未整合自舉式二極體的高電壓終端結構。本發明研究以此高電壓終端結構為基礎,提出可以整合自舉式二極體於其中,從P導電型接觸端區(P+)208到基底200,構成PNP的 路徑,而將自舉式二極體整合於其中。
圖3是依照本發明一實施例,一種高電壓終端結構的剖面示意圖。參閱圖3,本實施例是根據圖2的進一步整合自舉式二極體的高電壓終端結構,是以圖2的結構為基礎的實施例,因此相同元件符號代表相似的元件,但是配合自舉式二極體的結構,摻雜結構會有一些修正。
首先,對應P導電型接觸端區(P+)208的位置,一N導電型摻雜結構包含N導電型高電壓井區(HVNW)220形成在磊晶層202中,與基底200接觸。N導電型高電壓井區(HVNW)220取代圖2中的P導電型高電壓井區(HVPW) 204的一部分,而與其相鄰接。N導電型高電壓井區(HVNW)220的形成,促成埋入的自舉式二極體的建立。另外,N導電型摻雜結構也可以再包括N導電型埋入層(NBL)222在底部,也與基底200接觸,以增加防止電壓崩潰的能力。N導電型埋入層(NBL)222例如與P導電型高電壓井區(HVPW) 204有一距離D,例如約8微米。然而N導電型埋入層(NBL)222不是絕對必要。
接著,P導電型接觸端區(P+)208以及P導電型井區(IPW) 218會形成在N導電型摻雜結構上,也就是形成在N導電型高電壓井區(HVNW)220中,其中P導電型接觸端區(P+)208是用以與陽極端連接,更形成在P導電型井區(IPW) 218中。如此,基底200、N導電型摻雜結構(例如包括N導電型高電壓井區(HVNW)220以及N導電型埋入層(NBL)222以及P導電型摻雜結構(例如包括P導電型接觸端區(P+)208以及P導電型井區(IPW) 218),在垂直於基底200的方向構成PNP路徑結構以提供自舉式二極體於路徑中。另外,如圖1所示,此PNP路徑結構在基底200的水平方向環繞上橋電路104。
除了前述產生PNP路徑結構以提供自舉式二極體的結構,其它的結構,如N導電型陰極電極結構210,如圖2所描述,也是形成在磊晶層202中,用以與陰極端連接。N導電型的磊晶摻雜區域(N-EPI)206在磊晶層202中,與基底200接觸,並且是位於PNP路徑與N導電型陰極電極結構210之間,也環繞上橋電路。閘極結構212是在N導電型磊晶摻雜區域(N-EPI)206上,位於P導電型摻雜結構(208+218)與N導電型陰極電極結構210之間。P導電型基極摻雜結構216,在磊晶層202中,與N導電型摻雜結構(220),用以提供基底電壓給基底200。
於此,P導電型基極摻雜結構216不限於所舉實施例的摻雜結構,其只要能夠接收基底電壓,而能保持不被高電壓破壞,以傳遞給基底200即可。
基於如圖3所示的高電壓終端結構整合自舉式二極體的機制,其可以應用到其他類型的高電壓終端結構。圖4是依照本發明一實施例,一種高電壓終端結構的剖面示意圖。參閱圖4,以圖3的結構為基礎進行N導電型陰極電極結構210的修改,在增加另一個N導電型高電壓井區(HVNW)224,形成於磊晶層202中與N導電型磊晶摻雜區域(N-EPI)206相鄰。N導電型高電壓井區(HVNW)224與基底200接觸。另外,多個摻雜區域N-DRIFT、NW、N+,依序形成於N導電型高電壓井區(HVNW)224中。如此的N導電型陰極電極結構210,當作汲極結構,用以接受陰極電壓。
可以了解的是,不管採用圖3的N導電型陰極電極結構210或是圖4的N導電型陰極電極結構210,都不會改變整合自舉式二極體的PNP路徑。換句話說,本發明的N導電型陰極電極結構210雖然是以多個實施例來描述,但是本發明的N導電型陰極電極結構,不限於所舉的實施例。
於另一實施例,高電壓終端結構還可以有其它的變化。 圖5是依照本發明一實施例,一種高電壓終端結構的剖面示意圖。參閱圖5,在P導電型的基底200中例如可以在表層先形成P導電型埋入層(PBL)226。接著磊晶層202形成於基底200上,作為形成各種摻雜區域的基礎。於此,P導電型埋入層(PBL)226,可以將基底電壓最後提供給基底200。
於本實施例,首先描述整合自舉式二極體的結構,其是藉由建立PNP路徑的結構來達成。相同的元件符號也代表先前已描述的類似元件。此PNP路徑的結構於本實施例包括N導電型高電壓井區232,形成在磊晶層202中與基底200以及P導電型埋入層226接觸,其中N導電型高電壓井區(HVNW)232主要與基底200接觸,而與P導電型埋入層(PBL)226接觸的面積為次要。接著,P導電型井區(PW)234形成在N導電型高電壓井區(HVNW)232中。P導電型接觸端區(P+)236形成在P導電型井區(PW)234中,用以與陽極端連接。閘極結構212除了是在N導電型的磊晶摻雜區域(N-EPI)206上,也同時是在P導電型井區(PW)234上。由基底200、N導電型高電壓井區(HVNW)232、P導電型井區(PW)234以及P導電型接觸端區(P+)236也是構成PNP路徑的結構,其中P導電型井區(PW)234與N導電型高電壓井區(HVNW)232達到整合自舉式二極體的架構,而N導電型高電壓井區(HVNW)232也使P導電型接觸端區(P+)236與基底200隔絕。
另外,關於接收基底電壓的P導電型基極摻雜結構例如可以包括P+摻雜區域230、P導電型高電壓井區(HVPW)228以及P導電型埋入層(PBL)226。P+摻雜區域230接收基底電壓,以提供給基底200。可以了解的是,P導電型基極摻雜結構也可以採用前面實施例的方式,但是本發明不需要限制P導電型基極摻雜結構。
另外,關於接收陰極電壓的N導電型陰極電極結構240,其可以採用前述多個實施例的結構。本實施例,例如採用與圖4相似的結構,包括N導電型高電壓井區(HVNW)240d,與基底接觸。N導電型摻雜區240c在N導電型高電壓井區(HVNW)240d上。N導電型摻雜區(NW)240b在N導電型摻雜區240c上。N導電型接觸端區240a,在N導電型摻雜區(NW)240b上,用以與陰極端連接。
圖6是依照本發明一實施例,一種高電壓終端結構的剖面示意圖。參閱圖6,再根據本發明另一實施例,關於要整合自舉式二極體時,所會形成的PNP路徑的結構,可以再作變化。本實施例以圖5的結構為例,再做PNP路徑的一些結構變化。在基底200的表層與P導電型埋入層(PBL)226相鄰也形成N導電型埋入層(NBL)250。
在N導電型埋入層(NBL)250上方的磊晶層202中形成P導電型高電壓井區(HVPW)254。P導電型接觸端區(P+)256形成在P導電型井區(HVPW)254中,用以與陽極端連接,例如是系統Vcc電壓。另一N導電型高電壓井區(HVNW)252在磊晶層202中與P導電型高電壓井區(HVPW)254相鄰,且與N導電型埋入層(NBL)250接觸,但是不需要與P導電型埋入層(PBL)226接觸。N導電型高電壓井區(HVNW)252在P導電型高電壓井區(HVPW)254與P導電型基極摻雜結構(包括P+摻雜區域230、P導電型高電壓井區(HVPW)228以及P導電型埋入層(PBL)226)之間。如此,整合自舉式二極體的PNP路徑可以在高電壓終端結構中形成。
綜上所述,本發明在高電壓終端結構中,以接收陽極電壓的摻雜區域到基底之間,完成PNP的路徑結構,其中也達到整合自舉式二極體的架構。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100: 高電壓積體電路 102: 下橋電路 104: 上橋電路 106: 電壓切換電路 106a: 高電壓切換器 106b: 低電壓切換器 108: 高電壓終端結構 200: 基底 202: 磊晶層 204: P導電型高電壓井區 206: 磊晶摻雜區域 208: P導電型接觸端區 210: N導電型陰極電極結構 210a: N導電型接觸端區 210b: N導電型井區 210c: N導電型摻雜區 212: 閘極結構 214: 隔離結構 216: P導電型基極摻雜結構 216a、216b、216c、216d: 摻雜區域 218 : P導電型井區 220 : N導電型高電壓井區 222 : N導電型埋入層 224 : N導電型高電壓井區 226: P導電型埋入層 228: P導電型高電壓井區 230: P+摻雜區域 232: N導電型高電壓井區 234: P導電型井區 236: P導電型接觸端區 240: N導電型陰極電極結構 240a: N導電型接觸端區 240b: N導電型摻雜區 240c: N導電型摻雜區 240d: N導電型高電壓井區 250: N導電型埋入層 252: N導電型高電壓井區 254: P導電型高電壓井區 256: P導電型接觸端區
圖1是依照本發明一實施例,高電壓積體電路的架構示意圖。 圖2是依照本發明一實施例,一種高電壓終端結構的剖面示意圖。 圖3是依照本發明一實施例,一種高電壓終端結構的剖面示意圖。 圖4是依照本發明一實施例,一種高電壓終端結構的剖面示意圖。 圖5是依照本發明一實施例,一種高電壓終端結構的剖面示意圖。 圖6是依照本發明一實施例,一種高電壓終端結構的剖面示意圖。
Claims (10)
- 一種高電壓終端結構,適用於高電壓積體電路中,其中該高電壓積體電路包括上橋電路、下橋電路以及電壓切換電路連接於該上橋電路與該下橋電路之間,進行電壓切換,該高電壓終端結構包括:基底,該基底是P導電型;磊晶層,形成於該基底上;N導電型摻雜結構,在該磊晶層中,與該基底接觸;P導電型摻雜結構,在該N導電型摻雜結構上,用以與陽極端連接,其中該基底、該N導電型摻雜結構以及該P導電型摻雜結構,在垂直於該基底的方向構成PNP路徑,其中該P導電型摻雜結構與該N導電型摻雜結構提供自舉式二極體,在該基底的水平方向環繞該上橋電路;N導電型陰極電極結構,在該磊晶層中,用以與陰極端連接;N導電型磊晶摻雜區域,在該磊晶層中,與該基底接觸,於該PNP路徑與該N導電型陰極電極結構之間,也環繞該上橋電路;閘極結構,在該N導電型磊晶摻雜區域上,於該P導電型摻雜結構與該N導電型陰極電極結構之間;以及P導電型基極摻雜結構,在該磊晶層中,與該N導電型摻雜結構相鄰,用以提供基底電壓給該基底。
- 如申請專利範圍第1項所述的高電壓終端結構,其中該PNP路徑的結構包括:第一N導電型高電壓井區,在該磊晶層中與該基底接觸;P導電型井區在該第一N導電型高電壓井區中;以及P導電型接觸端區,在該P導電型井區中,用以與該陽極端連接。
- 如申請專利範圍第2項所述的高電壓終端結構,其中在該第一N導電型高電壓井區內的底部更包括N導電型埋入層,與該基底接觸,但是與該P導電型基極摻雜結構有一距離。
- 如申請專利範圍第2項或第3項所述的高電壓終端結構,其中該N導電型陰極電極結構包括:第一N導電型摻雜區,在該N導電型磊晶摻雜區域中,不與該基底接觸;第二N導電型摻雜區在該第一N導電型摻雜區中;以及N導電型接觸端區,在該第二N導電型摻雜區上,用以與該陰極端連接。
- 如申請專利範圍第1項所述的高電壓終端結構,其中該基底上也形成有P導電型埋入層,其中該PNP路徑的結構包括:第一N導電型高電壓井區,在該磊晶層中與該基底以及該P導電型埋入層接觸;P導電型井區在該第一N導電型高電壓井區中;以及P導電型接觸端區,在該P導電型井區中,用以與該陽極端連接。
- 如申請專利範圍第1項所述的高電壓終端結構,其中該PNP路徑的結構包括:N導電型埋入層,形成於該基底內的表層;P導電型高電壓井區,在該磊晶層中與該N導電型埋入層接觸;P導電型接觸端區,在該P導電型井區中,用以與該陽極端連接;以及第一N導電型高電壓井區在該磊晶層中與該P導電型高電壓井區相鄰,且與該N導電型埋入層接觸,其中該第一N導電型高電壓井區在該P導電型高電壓井區與該P導電型基極摻雜結構之間。
- 如申請專利範圍第6項所述的高電壓終端結構,其中該基底上也形成有P導電型埋入層與該N導電型埋入層相鄰。
- 如申請專利範圍第1項所述的高電壓終端結構,其中該P導電型基極摻雜結構包括:P導電型埋入層,形成在該基底內的表層;P導電型高電壓井區,與該PNP路徑的結構相鄰;以及P導電型摻雜區域,在該P導電型高電壓井區內,用以接收該基底電壓。
- 如申請專利範圍第1項所述的高電壓終端結構,其中該陽極端的電壓會依照操作狀態變動。
- 一種高電壓積體電路,設置在P導電型的基底上,其中該高電壓積體電路包括上橋電路、下橋電路以及電壓切換電路連接於該上橋電路與該下橋電路之間,進行電壓切換,該高電壓積體電路包括:高電壓終端結構,環繞該上橋電路,其中在該高電壓終端結構有陽極端,其中在垂直於該基底的方向,從該陽極端到該基底包括PNP摻雜結構,其中該PNP摻雜結構包括位於該基底表層之P導電型埋入層。
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