TWI625818B - 晶圓形物件之液體處理方法與設備 - Google Patents
晶圓形物件之液體處理方法與設備 Download PDFInfo
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Abstract
在一種處理晶圓形物件之設備與方法中,一旋轉夾盤被提供用來固定晶圓形物件於預定位置,其中該晶圓形物件下表面以一預定距離和旋轉夾盤之上表面相間。至少包含一紅外光加熱器之一加熱組件,則裝置在旋轉夾盤上表面之上且低於置放在旋轉夾盤上的晶圓形物件。相對旋轉夾盤的轉動,該加熱組件仍保持靜止。
Description
此發明係關於晶圓狀物件的液體處理之方法及設備。
液體處理包含濕蝕刻及濕潔淨,其中將欲處理之晶圓表面區域以處理液體濕化,進而移除晶圓之一層或移除雜質。一液體處理裝置被描述於美國專利第4,903,717號。在此裝置中,可藉旋轉晶圓而促進液體之分布傳遞。
在生產製程期間潔淨矽晶圓(如微影前潔淨、CMP後潔淨及電漿後潔淨)後,在半導體產業中常會使用乾燥盤狀物件表面之技術。然而,該乾燥方法亦可應用於其他板狀物件上,諸如:光碟、光罩、標線片、磁碟或平面顯示器。當使用於半導體產業中時,該乾燥方法亦可應用於玻璃基材(如絕緣層覆矽製程)、三五族基材(如GaAs)、或其他用來製造積體電路之基材或載體。
在半導體產業中,現已知多種乾燥方法,其中部份使用異丙醇消除半導體晶圓表面之清洗液的表面張力。如可參見美國專利第5,882,433號。對此等方法之改善,包括使用加熱之異丙醇,則敘述於共有之世界專利申請案第2011/007287號及美國專利申請案第12/914,802號(申請於西元2010年10月28日)中。
然而,不只在乾燥製程期間,還有在其他液體處理期間,目前仍須發展防止圖案崩壞之改進的方法,前述圖案崩壞係於半導體晶圓上所形成之次微結構中發生。當在旋轉的晶圓表面上,徑向往外流動之液體的表面張力施予損壞或破壞之力於晶圓表面上所形成之次微結構,便發生上述之圖案崩壞。
隨半導體晶圓直徑增加,圖案崩壞之問題變得更加嚴重。例如,當前世代的單晶圓濕製程技術係設計予直徑300mm之晶圓,但前一世代技術係設計予200mm之晶圓,而下一世代則可能係設計予450mm或更大之直徑的晶圓。
特別是,隨著晶圓直徑的增加,於晶圓的中央區域的液體初接觸點及該液體徑向往外流至晶圓外緣處,兩者的液體溫差亦會增加。
圖案崩壞之問題亦隨著次微結構深寬比持續增加而變得更加嚴重。由於與厚度方向相較,在水平佈局上通常受到較大縮減元件尺寸的壓力,次微結構深寬比增加亦是當前半導體元件製造發展中的趨勢。
裝有用以加熱晶圓的紅外光加熱器之習知設備,受到紅外光加熱燈之石英管的容納方法所限制。例如,於美國專利第5,965,047號中有兩組紅外光燈,一在晶圓下隨晶圓轉動,另一相較於晶圓而保持靜止者則位在晶圓上方。如此複雜的配置,使得氣體和液體媒體到晶圓的傳輸變得複雜。
就部份程度而言,此發明係基於認知到世界專利第2011/007287號及美國專利第12/914802號所描述之技術可能不能完全有效防止圖案崩壞,因為正在旋轉中的晶圓表面在外圍處的線性速度係相對高於在中央的線性速度,以致於當分配於晶圓形物件之上側中央區中的加熱過液體徑向地向外朝向晶圓狀的外圍移動時,會實質上冷卻。
因此,在使用分配至旋轉基材上側之經加熱媒體的乾燥製程期間,所用之媒體不能均勻地降溫。由於從中央到邊緣周速的增加,自中央到邊緣之冷卻亦會大幅增加。由於較冷媒體有較大的表面張力,上述種種將導致結構圖案崩壞。
此外,當欲供應額外之熱至晶圓以減緩上述問題時,理想上加熱晶圓,使該晶圓可以快速達到所欲製程溫度,且隨後快速降溫至周圍溫度。
該認知引領吾人到當前發明,就一態樣而言,此發明係關於一處理晶圓狀物件之設備,該設備包含:一旋轉夾盤,其用來固定晶圓形物件於預定定向,其中以一預定距離間隔晶圓狀物件之
下表面和旋轉夾盤之上表面;及一加熱組件,其包含至少一紅外光加熱器,其裝置於該旋轉夾盤之該上表面的上方,且當一晶圓形物件裝置在旋轉夾盤之上時,該加熱組件位於該晶圓形物件之下,該加熱組件係相對於該旋轉夾盤的轉動保持靜止。
根據本發明的設備之一較佳實施例,該設備更包含下噴嘴組件,其包含至少一個噴嘴,該噴嘴係用來引導流體向上至位於旋轉夾盤之上的晶圓形物件的面朝下表面。
根據本發明的裝置之一較佳實施例,該加熱組件包含一外罩,其和下噴嘴組件之外罩結合。
根據本發明設備之一較佳實施例,該旋轉夾盤更包含周圍一系列的上突夾持元件,該等夾持元件設置成可嚙合該旋轉夾頭欲固持之晶圓形物件之周圍邊緣,各個上突夾持元件係繞平行於該旋轉夾盤之旋轉軸的一軸可樞轉。
根據本發明的裝置之一較佳實施例,各個上突夾持元件包含一偏心握爪夾持器,當該夾持元件自嚙合晶圓形物件的一徑向向內位置樞轉至釋放晶圓形物件的徑向向外位置之時,該偏心夾持器係可移動的。
根據本發明設備之一較佳實施例,該設備係半導體晶圓之單晶圓濕處理之一製程模組。
根據本發明設備之一較佳實施例,該加熱組件包含至少一個管狀紅外光加熱元件,其具有彎曲的構造。
根據本發明設備之一較佳實施例,該至少一個管狀紅外光加熱元件發出最大峰值介於700至1300nm之紅外光輻射。
根據本發明設備之一較佳實施例,該至少一個管狀紅外光加熱元件包含於其下部之反射鍍膜,藉此使紅外光輻射往該加熱組件上方傳送。
就另一實施態樣中,本發明係關於處理晶圓形物件之製程,包含以預定定向放置一晶圓形物件於一旋轉夾盤上,其中該晶圓形物件之第一面朝下且以預定之距離與旋轉夾盤之上表面相間隔,其中一紅外光加熱組件係位於該晶圓形物件和該旋轉夾盤之
上表面之間。當轉動旋轉夾盤中的晶圓狀物件時,從至少一個上噴嘴分配處理液體至該晶圓狀物件朝上之第二面。在進行該分配處理液體的步驟期間,以該紅外光加熱組件加熱該晶圓狀物件,且相對於該旋轉夾盤及該晶圓狀物件的轉動,該紅外光加熱組件保持固定。
根據本發明製程之一較佳實施例,該加熱組件至少包含一管狀紅外光加熱元件,其具有彎曲的構造。
根據本發明製程之一較佳實施例,該晶圓狀物件包含矽基材,且至少一管狀紅外光加熱元件發出最大峰值介於700至1300nm之紅外光輻射。
根據本發明製程之一較佳實施例,該放置一晶圓形物件於一旋轉夾盤上的步驟包含使該晶圓形物件之周圍邊緣與一系列之夾持元件每一者嚙合,其中該等夾持元件各自包含一主體,該主體係繞平行於該旋轉夾盤的旋轉軸之一軸可樞轉。
根據此發明製程之一較佳實施例,分配至該晶圓形物件第二表面之處理液體係包含異丙醇的液體,且其中該加熱組件加熱晶圓形物件至50-100℃,且該加熱組件加熱晶圓形物體至50-100℃,較佳至60-80℃,且更較佳至65-75℃。
根據此發明製程之一較佳實施例,該包含異丙醇之液體被加熱到超過30℃,且較佳係超過60℃。
現在參照圖式,圖1及圖2係描繪一旋轉夾盤1,該夾盤以預定定向將晶圓固定於其上,該預定定向較佳係將主要表面水平配置或配置於水平面的±20°之內。舉例來說,旋轉夾盤1係可能根據白努利定理而操作,如美國專利第4,903,717號之例。
夾盤1包含一系列之夾持銷,其在此實施例中共有六個,給予編號10-1到10-6。夾持銷10-1到10-6防止晶圓自夾盤側向滑落。在實施例中,夾持銷10-1到10-6的上部亦提供晶圓W的下方支撐,故夾盤不須根據白努利定理而操作且不須用以提供晶圓
下方之氣墊。特別的是,各個夾持銷包含最上方之夾持部,其自圓柱狀的銷底部垂直延伸,通常係沿相對於圓柱狀銷底部之旋轉軸偏位之軸延伸。上方之夾持部各自更包含側凹部或切口,其用來容納晶圓之周圍邊緣,這將在以下詳述。
儘管未顯示在圖中,但該旋轉夾盤可由製程腔室所圍繞,該腔室亦可為多層製程腔室,就如共有之美國專利第7,837,803號(對應世界專利第2004/084278號)所描述。又如美國專利第6,536,454號之圖4所述,可藉由相對於靜止的圍繞腔室而軸向移動夾盤,或相對於軸向靜止之夾盤而移動圍繞的腔室,將旋轉夾盤置於選定之高度。
夾盤1更包含一加熱組件2,其用來加熱裝置於夾盤上之晶圓的底面。加熱組件2則與靜止之噴嘴頭20結合,該噴嘴頭提供流體至晶圓W朝下之面。
加熱組件2包含一彎曲之紅外光加熱元件12,其被有互補形狀之外罩14所容納。在此實施例中,加熱組件2之形狀在外觀上如同一潛水鏡。如下所述,由於相對旋轉之夾盤與旋轉之晶圓加熱組件2維持靜止,故當設計該加熱組件時,加熱元件的周向分布可被忽略而將沿晶圓半徑之可用加熱功率作為主要設計考量。
加熱元件12較佳係單一彎曲元件;然而提供複數個線性或彎曲加熱元件至加熱組件亦在本發明範圍之內。
該(該等)加熱元件12較佳係在多個分區可分別地控制,以根據裝置所執行製程之特定需求調整晶圓不同區域之紅外光輻射。
外罩14結合靜止之噴嘴,其形成此實施例之分配組件。如圖3所示,該分配組件包含一非旋轉(靜止)噴嘴頭20,其中之噴嘴穿過加熱組件的外罩,將於下詳述。在此實施例中,三個噴嘴22、24、26穿過噴嘴頭而伸出。供應此三噴嘴之管線分別連結至各異之流體來源。例如,噴嘴22可供應去離子水;中噴嘴24可供應乾燥氮氣;及噴嘴26可供應製程液體。上述噴嘴22、24、26皆朝向晶圓朝下之表面。
將管線30於中心地配置且連接至氣體來源。如氮氣或超潔淨空氣將透過管線30引導到噴嘴24而至晶圓朝下之表面。管線30亦可提供當作沖洗氣體之氮氣或超潔淨空氣到加熱組件2的底面及旋轉夾盤1的上表面之間的空間32。
圖3亦顯示加熱組件2以懸臂方式安裝,使得該加熱組件2與上方的晶圓W及下方的夾盤1的旋轉上表面二者分隔,其中該上表面係由夾盤1的環狀頂板所提供。因此,外罩14須足夠堅硬而使其不和夾盤的旋轉表面和晶圓任一者接觸。
旋轉夾盤1架置於中空軸柄型馬達40之轉子上(圖3所示),且靜止之噴嘴頭20穿過旋轉夾盤1之中央開口。中空軸柄型馬達40之靜子固定在座板42(圖3所示)。噴嘴頭20和座板42固定在相同之靜止支架44(圖3所示)。
夾持元件10-1至10-6設有偏心安裝之夾持器。藉由與所有夾持元件嚙合接合的齒輪16,該等夾持元件可繞其圓柱軸共同地旋轉。是故該等偏心夾持器在一徑向內部封閉位置與一徑向外部開啟位置之間共同地移動,其中於該徑向內部封閉位置將晶圓W固定,且於該徑向外部開啟位置將晶圓W釋放。該夾持元件10-1至10-6可依下述所製:共有之美國專利申請案第12/668,940號(對應WO第2009/010394號或共有之美國專利第12/642,117號,於2009年12月18日所申請)。故夾持元件10-1至10-6包含從底部突出之與晶圓W接觸的偏心最上部位,而該底部係用於繞其中央軸進行樞轉運動而安裝。特別的是,環形齒輪16係以夾盤上部主體的底面為中心,且同時藉由其周邊的齒輪齒與形成於夾持銷10-1到10-6每一者底部的齒輪齒嚙合。夾持銷10-1到10-6在旋轉夾盤1之周緣均勻分佈,其中至少需設置三個夾持銷,且較佳設置六個夾持銷。
上液體分注器50由上方提供處理液體,且可包含用以分注各種不同處理液體之複數個不同的液體分注噴嘴,如共有之美國專利第7891314號(對照世界專利第2006/008236號)所述。上液體分注器50較佳相對晶圓W而徑向可移動,故可在晶圓在旋轉夾盤
上旋轉時,協助將處理液體分送至晶圓W的整個面朝上表面。
如圖4所示,可看到晶圓W係置於加熱組件2的上表面之上。另一方面,加熱組件2的下表面以間隔32和夾盤1之上表面分隔。所以當夾盤1和晶圓W共同旋轉時,加熱組件2仍保持固定,其中外罩14係與靜止之噴嘴20結合。
外罩14由板18所覆蓋,板18之材料對紅外光加熱元件12所產生之紅外光輻射有高透光性(即高穿透度)。板18較佳係由石英玻璃組成。板18和外罩14較佳形成液密密封,以排除如熱異丙醇等製程液體於外罩14之外,進而阻止液體接觸加熱元件12。
此實施例之加熱元件12較佳以雙壁石英管34之形式,其中容納一對鎢加熱線圈36,該鎢加熱線圈36係密封於雙壁石英管34內部而在一氬氣周圍環境中。加熱元件12較佳更包含一層鍍膜(或層)38於其下半部,該鍍膜(或層)之材料對加熱元件12所產生之紅外光輻射具有反射性。舉例來說,該鍍膜38可以是金屬,例如金;亦可是非金屬,諸如不透明合成石英材料之薄膜。
此實施例之加熱元件12較佳係發出最大峰值在1000nm±300nm之紅外光輻射。這些波長對應矽有高吸收率之區間,而矽亦是此設備所處理之晶圓的常見材料。較佳選擇且操作該紅外光加熱器,使得該紅外光加熱器發出一IR光譜,且至少有50%的該紅外線輻射被矽晶圓的矽所吸收。
如圖5所示,根據本發明之設備的第二實施例包含加熱組件2',該加熱組件2'包含約為U形之紅外光加熱元件12',其被包覆在對應之外罩14'內。圖6顯示透明石英玻璃之蓋件18'的位置,其與外罩14'形成紅外光加熱器12'所用之密封封閉空間。圖5和6的實施例在其他方面係如前述實施例所述。
以下將敘述處理晶圓W之製程。一晶圓(例如300mm矽晶圓)被裝置在圖1-4之旋轉夾盤1上,且由夾持元件10-1到10-6加以穩固地固定。該旋轉夾盤以例如500rpm之旋轉速度旋轉。包含經加熱之異丙醇之乾燥液體經由噴嘴50以1500ml/min之體積流量供應予晶圓上表面之中央。同時啟動紅外光加熱組件2以
加熱晶圓至所欲的溫度。
經由初步試驗發現300mm晶圓可被均勻加熱至約65℃,且發現在使用施加於72℃溫度之異丙醇溶液而進行乾燥之時,能用以防止晶圓上所形成之深寬比大於10:1之微結構的圖案崩壞。更概括性地來說,根據本發明之設備較佳係用於50-100℃之晶圓加熱溫度範圍,其對應於較佳紅外光加熱元件之2-4kw之加熱功率範圍。
此外,根據本發明之設備可達±5℃之重複精準度、±5℃之晶圓溫度均勻性、及各僅約5秒之晶圓加熱及冷卻時間。
儘管本發明已藉數個較佳實施例加以描述,但仍須理解實施例僅係提供本發明之描繪,而非假此限制隨後申請專利範圍之真實精神與範圍所傳達之保護範疇。
W‧‧‧晶圓
1‧‧‧夾盤
10-1‧‧‧夾持銷(元件)
10-2‧‧‧夾取銷(元件)
10-3‧‧‧夾取銷(元件)
10-4‧‧‧夾取銷(元件)
10-5‧‧‧夾取銷(元件)
10-6‧‧‧夾取銷(元件)
12‧‧‧加熱元件
14‧‧‧外罩
16‧‧‧齒輪
18‧‧‧板
2‧‧‧加熱組件
20‧‧‧噴嘴頭
22‧‧‧噴嘴
24‧‧‧噴嘴
26‧‧‧噴嘴
30‧‧‧管線
32‧‧‧間隔
34‧‧‧雙壁石英管
36‧‧‧加熱線圈
38‧‧‧鍍膜
40‧‧‧馬達
42‧‧‧座板
44‧‧‧支架
50‧‧‧上液體分注器
12'‧‧‧加熱元件
14'‧‧‧外罩
18'‧‧‧蓋件
2'‧‧‧加熱組件
藉閱讀下列本發明較佳實施例之詳述及伴隨之附圖,本發明之其他目的性、特色、優點將更加明顯,其中:圖1係根據本發明第一實施例之夾盤自上方的示意透視圖;圖2係圖1實施例之俯視平面圖;圖3係圖1及圖2所描繪之夾盤之部份軸向剖面圖,其係沿圖2線段III-III間所取,且其中晶圓係位在虛線所指示之位置處;圖4係圖3中之以IV標示之細節的放大圖;圖5係根據本發明第二實施例之夾盤的自上方的示意透視圖;且圖6係圖5之實施例另一角度之示意透視圖,其中夾盤係沿圖5之平面VI-VI所截取。
Claims (20)
- 一種液體處理晶圓形物件之設備,包含:一旋轉夾盤,用來固定晶圓形物件於一預定定向,其中該旋轉夾盤包含一環狀頂板及一座板,其中該晶圓形物件的下表面以一預定距離和該旋轉夾盤的該環狀頂板之上表面相間,且其中該環狀頂板係設置在該座板之上;及一加熱組件,其裝置在該環狀頂板之該上表面之上、該旋轉夾盤之外,且當該晶圓形物件裝置在該旋轉夾盤之上時,該加熱組件係位於該晶圓形物件之下,使得該加熱組件係設置在該環狀頂板之該上表面與該晶圓形物件之間,其中該加熱組件相對於該旋轉夾盤的轉動係靜止的;其中該旋轉夾盤包含周圍一系列之夾持元件,其各包含位於該加熱組件之上的一最上方夾持部,其中該周圍一系列之夾持元件設置成嚙合由該旋轉夾頭所固持之該晶圓形物件之周圍邊緣,且其中該周圍一系列之夾持元件從該上表面向上延伸至該等最上方夾持部。
- 如申請專利範圍第1項之液體處理晶圓形物件之設備,更包含:一下噴嘴組件,其包含至少一噴嘴,用來將流體朝上引導到位在該旋轉夾盤上之該晶圓形物件的面朝下表面。
- 如申請專利範圍第1項之液體處理晶圓形物件之設備,其中:該加熱組件包含一外罩及一加熱線圈;該加熱線圈係設置於該外罩中;且該外罩係與該旋轉夾盤分隔,且係以懸臂方式設置在該環狀頂板之該上表面的一部分上方。
- 如申請專利範圍第1項之液體處理晶圓形物件之設備,其中該等夾持元件係繞平行於該旋轉夾盤之旋轉軸的一軸可樞轉。
- 如申請專利範圍第4項之液體處理晶圓形物件之設備,其中當該夾持元件自嚙合該晶圓形物件的一徑向向內位置樞轉至釋放該晶圓形物件的徑向向外位置之時,該等最上方夾持部各自係可移動的。
- 如申請專利範圍第1項之液體處理晶圓形物件之設備,其中該設備係半導體晶圓之單晶圓濕處理之一製程模組。
- 如申請專利範圍第1項之液體處理晶圓形物件之設備,其中該加熱組件包含:一雙壁石英管;及複數管狀紅外光加熱線圈,其具有彎曲的構造,並在該雙壁石英管中沿著該雙壁石英管延伸。
- 如申請專利範圍第7項之液體處理晶圓形物件之設備,其中該複數管狀紅外光加熱線圈發出最大峰值係介於700到1300nm的紅外光輻射。
- 如申請專利範圍第7項之液體處理晶圓形物件之設備,其中該複數管狀紅外光加熱線圈包含反射鍍膜於其下部,藉此朝該加熱組件上方傳送紅外光輻射。
- 如申請專利範圍第1項之液體處理晶圓形物件之設備,其中該加熱組件包含至少一個紅外光加熱器、及該至少一個紅外光加熱器上方的一蓋板,且該蓋板對該至少一個紅外光加熱器所產生之紅外光輻射有高透光性。
- 一種液體處理晶圓形物件之製程,包含:以預定定向放置一晶圓形物件於一旋轉夾盤上,其中該晶圓形物件之第一面朝下且以預定之距離與旋轉夾盤的一環狀頂板之上表面相間隔,其中該環狀頂板係設置在該旋轉夾盤的一座板之上,其中一加熱組件係位於該晶圓形物件和該環狀頂板之上表面之間,其中該旋轉夾盤包含周圍一系列之夾持元件,其各包含位於該加熱組件之上的一最上方夾持部,且其中該晶圓形物件係由從該旋轉夾盤的該環狀頂板之該上表面向上延伸至該等最上方夾持部的該周圍一系列之夾持元件所固持;當旋轉在該旋轉夾盤上之該晶圓形物件時,從至少一上噴嘴分配處理液體至該晶圓形物件朝上之第二面;及在進行該分配處理液體的步驟期間,以該加熱組件加熱晶圓形物件,其中該加熱組件相對於該旋轉夾盤和該晶圓形物件的轉動係保持靜止。
- 如申請專利範圍第11項之液體處理晶圓形物件之製程,其中該加熱組件包含:一雙壁石英管;及複數管狀紅外光加熱線圈,其具有彎曲的構造,並在該雙壁石英管中沿著該雙壁石英管延伸。
- 如申請專利範圍第12項之液體處理晶圓形物件之製程,其中該晶圓形物件包含矽基材,且該複數管狀紅外光加熱線圈發出最大峰值係介於700至1300nm間的紅外光輻射。
- 如申請專利範圍第11項之液體處理晶圓形物件之製程,其中該等最上方夾持部各自包含一主體,該主體係繞平行於該旋轉夾盤的旋轉軸之一軸可樞轉。
- 如申請專利範圍第11項之液體處理晶圓形物件之製程,其中分配至該晶圓形物件第二面之處理液體係包含異丙醇的液體,且其中該加熱組件加熱該晶圓形物件至50-100℃。
- 如申請專利範圍第11項之液體處理晶圓形物件之製程,其中分配至該晶圓形物件第二面之處理液體係包含異丙醇的液體,且其中該加熱組件加熱晶圓形物件至60-80℃。
- 如申請專利範圍第11項之液體處理晶圓形物件之製程,其中分配至該晶圓形物件第二面之處理液體係包含異丙醇的液體,且其中該加熱組件加熱晶圓形物件至65-75℃。
- 如申請專利範圍第15項之液體處理晶圓形物件之製程,其中該包含異丙醇之液體係被加熱至30℃以上。
- 如申請專利範圍第15項之液體處理晶圓形物件之製程,其中該包含異丙醇之液體係被加熱至60℃以上。
- 如申請專利範圍第11項之液體處理晶圓形物件之製程,其中該加熱組件包含一蓋板,該蓋板對該加熱組件所產生之紅外光輻射有高透光性。
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Also Published As
Publication number | Publication date |
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KR102101139B1 (ko) | 2020-04-16 |
US20130061873A1 (en) | 2013-03-14 |
TW201318102A (zh) | 2013-05-01 |
JP6073894B2 (ja) | 2017-02-01 |
JP2014528163A (ja) | 2014-10-23 |
KR20190140114A (ko) | 2019-12-18 |
KR102084910B1 (ko) | 2020-03-04 |
KR20140063679A (ko) | 2014-05-27 |
KR102084910B9 (ko) | 2022-07-25 |
KR20190124825A (ko) | 2019-11-05 |
US9355883B2 (en) | 2016-05-31 |
KR102101139B9 (ko) | 2022-07-25 |
WO2013035020A1 (en) | 2013-03-14 |
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