TWI624867B - Wafer processing method - Google Patents
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- TWI624867B TWI624867B TW103130768A TW103130768A TWI624867B TW I624867 B TWI624867 B TW I624867B TW 103130768 A TW103130768 A TW 103130768A TW 103130768 A TW103130768 A TW 103130768A TW I624867 B TWI624867 B TW I624867B
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- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 78
- 230000001681 protective effect Effects 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 27
- 238000002407 reforming Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 75
- 238000005520 cutting process Methods 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
- 238000005286 illumination Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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Abstract
本發明之課題為提供一種即使在晶圓背面貼有具絕緣性補強片時也可以實施內部加工之晶圓加工方法。解決手段為,將有複數條分割預定線在正面形成格子狀並且在藉由複數條分割預定線所劃分的複數個區域中形成有裝置之晶圓,沿著分割預定線分割成一個個裝置的晶圓之加工方法,其包含,在晶圓正面貼附保護構件的保護構件貼附步驟;磨削晶圓背面以形成預定厚度的背面磨削步驟;從晶圓背面側將對晶圓具有穿透性之波長的雷射光線之聚光點定位於對應分割預定線之內部並沿著分割預定線進行照射,而在晶圓內部沿著分割預定線形成改質層的改質層形成步驟;在晶圓的背面裝設具備絕緣機能之補強片並且在補強片側貼附切割膠帶並藉由環狀框架支撐切割膠帶之外周部的晶圓支撐步驟;藉由對晶圓進行加熱以加熱裝設在晶圓背面之補強片而使補強片固化的補強片加熱步驟;以及對晶圓施加外力,將晶圓分割為一個個裝置的並且沿著一個個裝置將補強片斷裂的分割步驟。
Description
本發明是有關於一種將有複數條分割預定線在正面形成格子狀並且在藉由複數條分割預定線所劃分的複數個區域中形成有裝置之晶圓,沿著分割預定線進行分割的晶圓之加工方法。
在半導體裝置製造步驟中,是在呈略圓板狀的半導體晶圓正面上由排列成格子狀之分割預定線劃分成複數個區域,並在這些劃分的區域中形成IC、LSI等裝置。藉由沿著分割預定線將如此形成之半導體晶圓切斷,以分割形成有裝置的區域而製造出一個個裝置。
上述沿著半導體晶圓的分割預定線進行之切斷,通常是以稱為切割機(Dicer)的切削裝置來進行。此切削裝置具備,保持半導體晶圓及光裝置晶圓等被加工物之工作夾台、用於切削保持於該工作夾台上之被加工物的切削機構,和使工作夾台和切削機構相對移動之切削傳送機構。切削機構包含,旋轉主軸和裝設於該主軸之切削刀片,及具備可旋轉驅動旋轉主軸之驅動機構的主軸單元。切削
刀片是由圓盤狀的基台和裝設於該基台之側面外周部的環狀的切刀所構成,切刀是藉由電鑄技術使例如,粒徑3μm左右的鑽石磨粒固定到基台並形成20μm左右的厚度。
然而,因為切削刀片具有20μm左右的厚度,因此必須將區分裝置之分割預定線的寬度做成約50μm左右,而有相對於晶圓面積之分割預定線所占之面積比例會變大,並使生產率變差的問題。
另一方面,作為近年來用於分割半導體晶圓等晶圓的方法,也嘗試使用對晶圓具有穿透性之波長的脈衝雷射光線,將聚光點定位於應當分割區域的內部而照射脈衝雷射光線之稱為內部加工的雷射加工方法。這種使用了稱為內部加工的雷射加工方法之分割方法,是從晶圓一邊的面側將聚光點對準內部而照射對晶圓具有穿透性之波長的脈衝雷射光線,以在晶圓的內部沿著分割預定線連續地形成改質層,再藉由沿著因為形成此改質層而使強度降低之分割預定線施加外力,以將晶圓斷裂而分割的技術(參照例如,專利文獻1)。
專利文獻1:日本專利特許第3408805號公報
並且,因為晶圓的正面上積層有構成裝置之複數
層機能層,所以為了要將脈衝雷射光線的聚光點定位於晶圓內部以實施內部加工,必須由晶圓的背面側照射雷射光線。
然而,在沿上下積層裝置以形成積層半導體裝置之晶圓上,會事先在晶圓的背面裝設有具絕緣性的補強片,因為此補強片會遮擋雷射光線,而有無法由晶圓的背面側實施內部加工的問題。
本發明是有鑒於上述事實而作成者,其主要之技術課題在於,提供一種即使在晶圓背面貼有具絕緣性之補強片時,也可以實施內部加工的晶圓之加工方法。
為解決上述主要之技術課題,根據本發明,提供一種將有複數條分割預定線在正面形成格子狀,並且在藉由複數條分割預定線所劃分的複數個區域中形成有裝置之晶圓,沿著分割預定線分割成一個個裝置的晶圓之加工方法,特徵在於,其包含:保護構件貼附步驟,在晶圓正面貼附保護構件;背面磨削步驟,將透過該保護構件貼附步驟而使正面貼附有保護構件的晶圓之保護構件側保持在磨削裝置的工作夾台上,並磨削晶圓背面以形成預定厚度;改質層形成步驟,使透過該背面磨削步驟而形成為預定厚度之晶圓的保護構件側保持在雷射加工裝置的工作夾台上,並從晶圓的背面側將對晶圓具有穿透性之波長的雷射光線之聚光點定位於對應分割預定線之內部以沿著分割
預定線進行照射,而在晶圓內部沿著分割預定線形成改質層;晶圓支撐步驟,在實施過該改質層形成步驟之晶圓的背面裝設具備絕緣機能之補強片,並且在補強片側貼附切割膠帶並藉由環狀框架支撐該切割膠帶之外周部;補強片加熱步驟,藉由對實施過該晶圓支撐步驟之晶圓進行加熱以加熱裝設在晶圓背面之補強片,而使補強片固化;以及分割步驟,對晶圓施加外力,將晶圓沿著形成有改質層的分割預定線分割為一個個裝置,並且沿著一個個裝置將補強片斷裂。
在實施上述補強片加熱步驟之前實施上述分割步驟,並在實施分割步驟之後實施補強片加熱步驟。
上述晶圓支撐步驟,是使用貼有具絕緣機能之補強片的切割膠帶而實施。
在實施上述補強片加熱步驟之前實施將貼附於晶圓正面之保護構件剝離之保護構件剝離步驟。
在實施上述分割步驟之前實施將貼附於晶圓正面之保護構件剝離之保護構件剝離步驟。
在本發明的晶圓之加工方法中,由於是藉由在晶圓正面貼附保護構件,並將該保護構件側保持在磨削裝置的工作夾台上而磨削晶圓背面,以實施將其磨削至預定厚度的背面磨削步驟,並藉由將磨削至預定厚度之晶圓的保
護構件側保持於雷射加工裝置的工作夾台上,以從晶圓背面側將對晶圓具有穿透性之波長的雷射光線之聚光點定位於對應分割預定線之內部而沿著分割預定線進行照射,以實施在晶圓內部沿著分割預定線形成改質層的改質層形成步驟之後,才實施在晶圓背面裝設具備絕緣機能之補強片並且在補強片側貼附切割膠帶並藉由環狀框架支撐該切割膠帶之外周部的晶圓支撐步驟,因此就算在晶圓背面貼有補強片時,也可以實施沿著分割預定線在晶圓內部形成改質層之作為內部加工的改質層形成步驟。而且,可以在藉由對晶圓施加外力,以將晶圓沿著形成有改質層之分割預定線分割為一個個裝置,並且沿著一個個裝置將補強片斷裂。
2‧‧‧半導體晶圓
2a‧‧‧正面
2b‧‧‧背面
21‧‧‧分割預定線
210‧‧‧改質層
22‧‧‧裝置
3‧‧‧保護膠帶
4‧‧‧磨削裝置
41、51‧‧‧工作夾台
41a、424a、424b、X、Y‧‧‧箭頭
42‧‧‧磨削機構
421‧‧‧主軸殼體
422‧‧‧旋轉主軸
423‧‧‧安裝座
424‧‧‧磨削輪
425‧‧‧基台
426‧‧‧磨削磨石
427‧‧‧連結螺栓
5‧‧‧雷射加工裝置
52‧‧‧雷射光線照射機構
521‧‧‧套管
522‧‧‧聚光器
53‧‧‧攝像機構
6‧‧‧補強片
7‧‧‧加熱裝置
71‧‧‧處理箱
72‧‧‧箱蓋
73‧‧‧被加工物載置台
74‧‧‧加熱器
8‧‧‧膠帶擴張裝置
81‧‧‧框架保持機構
811‧‧‧框架保持構件
811a‧‧‧載置面
812‧‧‧夾具
82‧‧‧膠帶擴張機構
821‧‧‧擴張滾筒
822‧‧‧支撐凸緣
823‧‧‧支撐機構
823a‧‧‧氣缸
823b‧‧‧活塞桿
83‧‧‧拾取筒夾
F‧‧‧環狀框架
P‧‧‧聚光點
S‧‧‧間隙
T‧‧‧切割膠帶
圖1是透過本發明的晶圓之加工方法而被分割之半導體晶圓的立體圖。
圖2(a)-(b)是顯示保護構件貼附步驟的說明圖。
圖3是用於實施背面磨削步驟之磨削裝置的主要部位立體圖。
圖4是顯示背面磨削步驟的說明圖。
圖5是用於實施改質層形成步驟之雷射加工裝置的主要部位立體圖。
圖6(a)-(b)是顯示改質層形成步驟的說明圖。
圖7(a)-(c)是顯示晶圓支撐步驟之一實施形態的說明圖。
圖8(a)-(b)是顯示晶圓支撐步驟之其他實施形態的說明圖。
圖9是顯示補強片加熱步驟的說明圖。
圖10是用於實施分割步驟之膠帶擴張裝置的立體圖。
圖11(a)-(b)是顯示分割步驟的說明圖。
圖12(a)-(b)是顯示拾取步驟的說明圖。
以下,參照附圖詳細地說明本發明的晶圓之加工方法之適當的實施形態。
圖1中所示為,依照本發明而被加工之半導體晶圓的立體圖。圖1所示之半導體晶圓2是由厚度為例如,500μm的矽晶片所製成,並有複數條分割預定線21在正面2a形成格子狀,並且在藉由該複數條分割預定線21所劃分出的複數個區域中形成有IC、LSI等裝置22。以下,對將此半導體晶圓2沿著分割預定線21分割成一個個裝置22的晶圓之加工方法進行說明。
首先,為了保護形成在半導體晶圓2之正面2a的裝置22,而實施在半導體晶圓2的正面2a上貼附保護構件的保護構件貼附步驟。亦即,如圖2所示地將作為保護構件的保護膠帶3貼附在半導體晶圓2的正面2a上。再者,在本實施形態中,保護膠帶3為,在以厚度為100μm的聚氯乙烯(PVC)所形成之片狀基材的正面上塗布有厚度5μm左右的丙烯酸樹脂(Acrylic resin)類之膠糊。
只要在半導體晶圓2的正面2a貼附上作為保護構件之保護膠帶3,就能實施將半導體晶圓2的保護構件側保持於磨削裝置的工作夾台上,並磨削半導體晶圓2的背面以將其磨削至預定厚度之背面磨削步驟。此背面磨削步驟,是利用圖3所示之磨削裝置4而實施。圖3所示之磨削裝置4具備,保持被加工物之工作夾台41,及可對保持於該工作夾台41的被加工物進行磨削之磨削機構42。將工作夾台41構成為可將被加工物吸引保持在頂面,並可藉由圖未示之旋轉驅動機構使其在圖3中沿箭頭41a所示的方向旋轉。磨削機構42具備,主軸殼體421、可旋轉自如地被支撐在該主軸殼體421上並可透過圖未示的旋轉驅動機構使其旋轉之旋轉主軸422、裝設於該旋轉主軸422下端之安裝座423,及安裝在該安裝座423之底面之磨削輪424。此磨削輪424是由圓環狀之基台425,和在該基台425之底面裝設成環狀的複數個磨削磨石426所構成,並藉由連結螺栓427將基台425安裝到安裝座423的底面。
為了使用上述之磨削裝置4實施上述背面磨削步驟,要如圖3所示地將實施過上述保護構件貼附步驟之半導體晶圓2的保護膠帶3側載置於工作夾台41的頂面(保持面)。並且,藉由圖未示之吸引機構隔著保護膠帶3將半導體晶圓2吸引保持於工作夾台41上(晶圓保持步驟)。從而,保持於工作夾台41上之半導體晶圓2會變成背面2b在上側。只要像這樣隔著保護膠帶3將半導體晶圓2吸引保持於工作夾台41上,就能一邊使工作夾台41在圖3中沿箭頭41a
所示的方向以例如300rpm旋轉,一邊使磨削機構42的磨削輪424在圖3中沿箭頭424a所示的方向以例如6000rpm旋轉,以如圖4所示地使磨削磨石426接觸作為被加工面之半導體晶圓2的背面2b,並使磨削輪424在圖3及圖4中如箭頭424b所示地以例如1μm/秒的磨削傳送速度朝下方(相對於工作夾台41的保持面為垂直的方向)進行預定量的磨削傳送。其結果為,使半導體晶圓2的背面2b被磨削,而將半導體晶圓2形成為預定的厚度(例如,100μm)。
其次,實施改質層形成步驟,將磨削至預定厚度之半導體晶圓2的保護構件側保持於雷射加工裝置的工作夾台上,並從半導體晶圓2背面側將對半導體晶圓2具有穿透性之波長的雷射光線之聚光點定位於對應分割預定線之內部,以沿著分割預定線進行照射,而在半導體晶圓2的內部沿著分割預定線形成改質層。此改質層形成步驟,是利用圖5所示之雷射加工裝置5而實施。圖5所示之雷射加工裝置5具備,保持被加工物之工作夾台51、對被保持在該工作夾台51上之被加工物照射雷射光線的雷射光線照射機構52,和對被保持在工作夾台51上之被加工物進行拍攝的攝像機構53。將工作夾台51構成為可吸引保持被加工物,並形成為可藉由圖未示之移動機構使其在圖5中沿箭頭X所示之加工傳送方向及箭頭Y所示之分度傳送方向移動。
上述雷射光線照射機構52,是從裝設於實質上配置成水平之圓筒狀的套管521前端之聚光器522照射脈衝雷射光線。又,裝設於構成上述雷射光線照射機構52之套管
521的前端部的攝像機構53,在圖示之實施形態中除了以可見光進行拍攝之一般攝像元件(CCD)之外,還能以可對被加工物照射紅外線之紅外線照明機構、可捕捉到該紅外線照明機構所照射的紅外線之光學系統,和可將對應該光學系統所捕捉到的紅外線之電氣信號輸出的攝像元件(紅外線CCD)等構成,並可將所拍攝到之圖像信號傳送至後述之控制機構。
關於利用上述之雷射加工裝置5而實施的改質層形成步驟,參照圖5及圖6加以說明。
此改質層形成步驟,首先,是將實施過上述磨削步驟之半導體晶圓2的保護膠帶3側載置於上述圖5所示之雷射加工裝置5的工作夾台51上。並且,藉由圖未示之吸引機構隔著保護膠帶3將半導體晶圓2吸引保持於工作夾台51上(晶圓保持步驟)。從而,保持於工作夾台51的半導體晶圓2會變成背面2b在上側。如此進行,就可以透過圖未示之加工傳送機構將吸引保持半導體晶圓2的工作夾台51定位到攝像機構53的正下方。
一旦將工作夾台51定位於攝像機構53的正下方,就可以藉由攝像機構53及圖未示之控制機構實行檢測半導體晶圓2之應當雷射加工的加工區域的校準(alignment)作業。亦即,攝像機構53及圖未示之控制機構會實行,用於使在半導體晶圓2之第1方向上所形成的分割預定線21,和可沿著分割預定線21照射雷射光線的雷射光線照射機構52的聚光器522進行位置校準的型樣匹配(pattern matching)
等圖像處理,而完成雷射光線照射位置的校準作業。又,對於在於半導體晶圓2上所形成之相對於上述第1方向為垂直的第2方向上延伸之分割預定線21,也是同樣地完成雷射光線照射位置的校準。此時,雖然半導體晶圓2之形成有分割預定線21之正面2a是位於下側,但是如上所述,因為可使攝像機構53具備,以紅外線照明機構和可捕捉紅外線之光學系統以及可將對應紅外線之電氣信號輸出的攝像元件(紅外線CCD)等所構成之攝像機構,故可從背面2b穿透以拍攝分割預定線21。
只要如上所述地進行以檢測出保持於工作夾台51上之半導體晶圓2上所形成的分割預定線21,並進行雷射光線照射位置的校準,就能如圖6(a)所示,將工作夾台51移動至照射雷射光線之雷射光線照射機構52之聚光器522所在的雷射光線照射區域,並將預定之分割預定線21的一端(在圖6(a)中為左端)定位於雷射光線照射機構52之聚光器522的正下方。其次,將從聚光器522照射出來之脈衝雷射光線的聚光點P定位到半導體晶圓2之厚度方向中間部。並且,一邊從聚光器522照射出對矽晶圓具有穿透性之波長的脈衝雷射光線,一邊使工作夾台51,即半導體晶圓2,在圖6(a)中沿箭頭X1所示之方向以預定的傳送速度移動。然後,如圖6(b)所示,當雷射光線照射機構52的聚光器522的照射位置到達分割預定線21之另一端的位置時,就停止脈衝雷射光線的照射,並且停止工作夾台51,即半導體晶圓2,的移動。其結果為,可在半導體晶圓2的內部,沿著分
割預定線21形成改質層210。
再者,可將上述改質層形成步驟的加工條件設定如下。
光源:Nd:YAG脈衝雷射
波長:1064nm
重複頻率:100kHz
平均輸出:0.3W
聚光點直徑:φ1μm
加工傳送速度:100mm/秒
如上所述地沿著預定之分割預定線21實施上述改質層形成步驟之後,就可以使工作夾台51在箭頭Y所示之方向上僅分度移動形成於半導體晶圓2的分割預定線21之間隔(分度步驟),並完成上述改質層形成步驟。如此進行而對在第1方向上所形成之所有的分割預定線21都實施過上述改質層形成步驟後,就能使工作夾台51旋轉90度,以沿著在相對於形成在上述第1方向上之分割預定線21為垂直的第2方向上延伸之分割預定線21實行上述改質層形成步驟。
接著,實施晶圓支撐步驟,在實施過上述改質層形成步驟之半導體晶圓2的背面裝設具備絕緣機能之補強片,並且在補強片側貼附切割膠帶並藉由環狀框架支撐該切割膠帶之外周部。在這個晶圓支撐步驟的實施形態中,是如圖7(a)及(b)所示,在半導體晶圓2的背面2b裝設具備絕緣機能的補強片6(補強片裝設步驟)。再者,補強片6是由,
具有黏著性,且加熱後會使其固化之樹脂片所形成。只要像這樣進行而在半導體晶圓2的背面2b裝設上補強片6,就可以如圖7(c)所示地將裝設有補強片6的半導體晶圓2的補強片6側貼附到裝設於環狀框架F上之可伸張的切割膠帶T上。並且,可將貼附於半導體晶圓2的正面2a上之保護膠帶3剝離(保護膠帶剝離步驟)。再者,在圖7(a)至(c)所示之實施形態中,雖然舉將裝設有補強片6的半導體晶圓2之補強片6側貼附於裝設在環狀框架F之切割膠帶T上為例,但是也可以將切割膠帶T貼附到裝設有補強片6的半導體晶圓2的補強片6側,並且將切割膠帶T的外周部同時裝設到環狀框架F上。
關於上述之晶圓支撐步驟的其他實施形態,參照圖8進行說明。圖8所示之實施形態,使用的是在切割膠帶T的正面已事先貼有補強片6的附補強片之切割膠帶。亦即,是如圖8(a)、(b)所示,將半導體晶圓2的背面2b裝設到,已貼附於以覆蓋環狀框架F的內側開口部的方式裝設外周部之切割膠帶T的正面的補強片6上。在像這樣使用附補強片之切割膠帶的情況中,藉由將半導體晶圓2的背面2b裝設到貼附在切割膠帶T正面的補強片6上,就可以透過裝設於環狀框架F上之切割膠帶T使裝設有補強片6的半導體晶圓2受到支撐。然後,可如圖8(b)所示地將貼附於半導體晶圓2正面2a的保護膠帶3剝離(保護膠帶剝離步驟)。再者,在圖8(a)、(b)所示之實施形態中,雖然舉將半導體晶圓2的背面2b裝設到,貼附在將外周部裝設於環狀框架F的切割膠帶T
正面的補強片6上為例,但也可以將貼附於切割膠帶T上之補強片6裝設到半導體晶圓2之背面2b,並且將切割膠帶T的外周部同時地裝設在環狀框架F上。
如上所述,由於在半導體晶圓2的背面裝設具絕緣機能之補強片6,並且在補強片6側貼附切割膠帶T並藉由環狀框架F支撐該切割膠帶T的外周部之晶圓支撐步驟,是在實施過上述改質層形成步驟之後才實施的,所以即使是在半導體晶圓2的背面貼附有具絕緣性的補強片6的情況,也可以實施在半導體晶圓2的內部沿著分割預定線21形成改質層210之作為內部加工的改質層形成步驟。
接著,實施補強片加熱步驟,藉由對實施過晶圓支撐步驟之半導體晶圓2進行加熱以加熱裝設於半導體晶圓2背面的補強片6,而使補強片6固化。此補強片加熱步驟是利用圖9所示之加熱裝置7實施。加熱裝置7是由,上端開放之處理箱71、可將該處理箱71的上端封閉之箱蓋72、配置於處理箱71內用於載置被加工物之被加工物載置台73,和配置於箱蓋72內面之加熱器74所構成。為了使用如此所構成之加熱裝置7來實施補強片加熱步驟,要將箱蓋72開放以將貼附有裝設於半導體晶圓2背面之補強片6之裝設在環狀框架F上之切割膠帶T側載置於被加工物載置台73上。從而,使隔著切割膠帶T載置於被加工物載置台73上之半導體晶圓2的正面2a變成上側。如此進行,只要將半導體晶圓2的正面2a做成朝上而將裝設在環狀框架F的切割膠帶T側載置於被加工物載置台73上,就能在關閉箱蓋72之後,作動
加熱器74而對載置於被加工物載置台73上之半導體晶圓2進行加熱以加熱裝設在半導體晶圓2背面的補強片6。在此補強片加熱步驟中,是以130℃加熱2小時。其結果為,可使裝設於半導體晶圓2背面的補強片6固化。
當實施過上述之補強片加熱步驟後,就能實施分割步驟,對半導體晶圓2施加外力,以在沿著形成有改質層210的分割預定線21將半導體晶圓2分割成一個個裝置22並且沿著一個個裝置22將補強片6斷裂。此分割步驟是利用圖10所示之膠帶擴張裝置8而實施。圖10所示之膠帶擴張裝置8具備,保持上述環狀框架F之框架保持機構81、使裝設在保持於該框架保持機構81之環狀框架F上之切割膠帶T擴張的膠帶擴張機構82,和拾取筒夾83。框架保持機構81是由環狀的框架保持構件811,和配置於該框架保持構件811外周之作為固定機構之複數個夾具812所構成。框架保持構件811的頂面形成有載置環狀框架F的載置面811a,並將環狀框架F載置於此載置面811a上。並且,載置於載置面811a上的環狀框架F,可藉由夾具812固定於框架保持構件811上。如此所構成之框架保持機構81,可透過膠帶擴張機構82被支撐成可在上下方向上進退。
膠帶擴張機構82具備,配置於上述環狀的框架保持構件811內側之擴張滾筒821。此擴張滾筒821具有,比環狀框架F之內徑還小,且比貼附於裝設在該環狀框架F之切割膠帶T上之半導體晶圓2的外徑還大的內徑及外徑。又,擴張滾筒821,在下端具備支撐凸緣822。本實施形態中的
膠帶擴張機構82具備,可使上述環狀的框架保持構件811在上下方向上進退之支撐機構823。此支撐機構823是由配置於上述支撐凸緣822上的複數個氣缸823a所構成,並將其活塞桿823b連接到上述環狀的框架保持構件811的下表面。像這樣由複數個氣缸823a所構成之支撐機構823,可如圖11(a)所示地使環狀的框架保持構件811在載置面811a與擴張滾筒821的上端成大致相同高度的基準位置,和如圖11(b)所示地比擴張滾筒821的上端還要向下預定量的擴張位置之間沿上下方向移動。
對於利用如以上方式所構成之膠帶擴張裝置8而實施之分割步驟,參照圖11加以說明。亦即,將裝設了貼附有半導體晶圓2的補強片6側的切割膠帶T之環狀框架F,如圖11(a)所示地載置於構成框架保持機構81之框架保持構件811的載置面811a上,並以夾具812固定於框架保持構件811上(框架保持步驟)。此時,框架保持構件811是定位於圖11(a)所示之基準位置。接著,將構成膠帶擴張機構82之作為支撐機構823的複數個氣缸823a作動,以使環狀的框架保持構件811下降至圖11(b)所示之擴張位置。從而,因為固定於框架保持構件811的載置面811a上的環狀框架F也會下降,所以如圖11(b)所示地裝設於環狀框架F上的切割膠帶T會接觸擴張滾筒821的上端緣而被擴張(膠帶擴張步驟)。其結果為,拉張力會放射狀地作用到貼附於切割膠帶T上的補強片6及裝設有該補強片6之半導體晶圓2上。當像這樣地將拉張力放射狀地作用到補強片6及半導體晶圓2上時,半導
體晶圓2由於形成有沿分割預定線21成為斷裂之起點的改質層210,因而可沿著分割預定線21被分割成一個個裝置22,並且在一個個的裝置22之間形成間隔(s),所以藉由實施上述補強片加熱步驟而使其得以被固化之補強片6上會有拉張力作用,而沿著一個個裝置22被斷裂。
當實施過上述之分割步驟時,就能藉由如圖12(a)所示地作動拾取筒夾83以對裝置22(背面裝設有補強片6)進行吸附、從切割膠帶T剝離並拾取之作業,以獲得背面裝設有如圖12(b)所示地沿著裝置22的外周緣正確地被斷裂之補強片6的半導體裝置22(拾取步驟)。再者,在拾取步驟中,如上所述,因為裝設有補強片6的一個個裝置22之間的間隙S會被擴大,所以不會有與相鄰接之裝置22接觸的情形,而可以容易地進行拾取。
以上,雖然依據圖示之實施形態說明了本發明,但本發明並非僅受限於實施形態者,且在本發明之主旨的範圍內可進行種種的變形。例如,在上述的實施形態中,雖然舉出在實施過上述補強片加熱步驟之後實施上述分割步驟之例,但也可以在實施上述補強片加熱步驟之前實施上述分割步驟,並在實施過分割步驟之後實施補強片加熱步驟。
Claims (5)
- 一種晶圓之加工方法,是將有複數條分割預定線在正面形成格子狀,並且在藉由該複數條分割預定線所劃分的複數個區域中形成有裝置之晶圓,沿著分割預定線分割成一個個裝置的晶圓之加工方法,特徵在於,其包含:保護構件貼附步驟,在晶圓正面貼附保護構件;背面磨削步驟,將透過該保護構件貼附步驟而使正面貼附有保護構件的晶圓之保護構件側保持在磨削裝置的工作夾台上,並磨削晶圓的背面以形成預定厚度;改質層形成步驟,使透過該背面磨削步驟而形成為預定厚度之晶圓的保護構件側保持在雷射加工裝置的工作夾台上,並從晶圓的背面側將對晶圓具有穿透性之波長的雷射光線之聚光點定位於對應分割預定線之內部以沿著分割預定線進行照射,而在晶圓的內部沿著分割預定線形成改質層;晶圓支撐步驟,在實施過該改質層形成步驟之晶圓的背面裝設具備絕緣機能之補強片,並且在補強片側貼附切割膠帶並藉由環狀框架支撐該切割膠帶之外周部;補強片加熱步驟,藉由對實施過該晶圓支撐步驟之晶圓進行加熱以加熱裝設在晶圓的背面之補強片,而使補強片固化;以及分割步驟,對晶圓施加外力,將晶圓沿著形成有改質層的分割預定線分割為一個個裝置並且沿著一個個 裝置將補強片斷裂。
- 如請求項1所述之晶圓之加工方法,其中,是在實施該分割步驟之後實施該補強片加熱步驟。
- 如請求項1或2所述之晶圓之加工方法,其中,該晶圓支撐步驟,是使用貼有具絕緣機能之補強片的切割膠帶而實施。
- 如請求項1所述之晶圓之加工方法,其中,是在實施該補強片加熱步驟之前實施將貼附於晶圓正面的保護構件剝離之保護構件剝離步驟。
- 如請求項2所述之晶圓之加工方法,其中,是在實施該分割步驟之前實施將貼附於晶圓正面的保護構件剝離之保護構件剝離步驟。
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