TWI624080B - 發光二極體晶片 - Google Patents

發光二極體晶片 Download PDF

Info

Publication number: TWI624080B
Authority: TW; Taiwan
Prior art keywords: pattern; emitting diode; convex pattern; concave; convex
Prior art date: 2013-06-21

Application number

TW103120945A

Other languages

English (en)

Chinese (zh)

Other versions

TW201513393A (zh

Inventor

金艺瑟

金京完

柳龍禑

李珍雄

林亨鎭

Original Assignee

首爾偉傲世有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2013-06-21

Filing date

2014-06-18

Publication date

2018-05-11

2014-06-18 Application filed by 首爾偉傲世有限公司 filed Critical 首爾偉傲世有限公司

2015-04-01 Publication of TW201513393A publication Critical patent/TW201513393A/zh

2018-05-11 Application granted granted Critical

2018-05-11 Publication of TWI624080B publication Critical patent/TWI624080B/zh

Links

239000004065 semiconductor Substances 0.000 claims abstract description 76
239000000758 substrate Substances 0.000 claims abstract description 23
238000000034 method Methods 0.000 claims description 17
230000032823 cell division Effects 0.000 claims description 12
238000005530 etching Methods 0.000 claims description 9
238000000605 extraction Methods 0.000 abstract description 16
239000010410 layer Substances 0.000 description 72
235000012431 wafers Nutrition 0.000 description 54
210000004027 cell Anatomy 0.000 description 6
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
229910002601 GaN Inorganic materials 0.000 description 4
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
229920002120 photoresistant polymer Polymers 0.000 description 3
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
230000000903 blocking effect Effects 0.000 description 2
239000002041 carbon nanotube Substances 0.000 description 2
229910021393 carbon nanotube Inorganic materials 0.000 description 2
229910052733 gallium Inorganic materials 0.000 description 2
229910052594 sapphire Inorganic materials 0.000 description 2
239000010980 sapphire Substances 0.000 description 2
239000011787 zinc oxide Substances 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
239000000470 constituent Substances 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
229910021389 graphene Inorganic materials 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
239000000463 material Substances 0.000 description 1
NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000001451 molecular beam epitaxy Methods 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
210000004508 polar body Anatomy 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
229910010271 silicon carbide Inorganic materials 0.000 description 1
239000002356 single layer Substances 0.000 description 1
229910052596 spinel Inorganic materials 0.000 description 1
239000011029 spinel Substances 0.000 description 1
239000000126 substance Substances 0.000 description 1
229910003468 tantalcarbide Inorganic materials 0.000 description 1
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
229910001887 tin oxide Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Led Devices (AREA)

TW103120945A 2013-06-21 2014-06-18 發光二極體晶片 TWI624080B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR1020130071583A KR20140148098A (ko)	2013-06-21	2013-06-21	발광 다이오드 칩
??10-2013-0071583		2013-06-21

Publications (2)

Publication Number	Publication Date
TW201513393A TW201513393A (zh)	2015-04-01
TWI624080B true TWI624080B (zh)	2018-05-11

Family

ID=52104921

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW103120945A TWI624080B (zh)	2013-06-21	2014-06-18	發光二極體晶片

Country Status (3)

Country	Link
KR (1)	KR20140148098A (ko)
TW (1)	TWI624080B (ko)
WO (1)	WO2014204271A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN108987425B (zh) *	2018-07-19	2020-09-18	豪威半导体（上海）有限责任公司	微led显示器及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR20100095134A (ko) *	2009-02-20	2010-08-30	엘지이노텍 주식회사	발광소자 및 그 제조방법
US20110284894A1 (en) *	2010-05-24	2011-11-24	Hee Young Beom	Light emitting device, light emitting device package, and lighting device system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2007258338A (ja) *	2006-03-22	2007-10-04	Rohm Co Ltd	半導体発光素子
KR101081135B1 (ko) *	2010-03-15	2011-11-07	엘지이노텍 주식회사	발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR20120005662A (ko) *	2010-07-09	2012-01-17	엘지이노텍 주식회사	발광 소자

2013
- 2013-06-21 KR KR1020130071583A patent/KR20140148098A/ko not_active Application Discontinuation
2014
- 2014-06-18 TW TW103120945A patent/TWI624080B/zh active
- 2014-06-20 WO PCT/KR2014/005482 patent/WO2014204271A1/en active Application Filing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR20100095134A (ko) *	2009-02-20	2010-08-30	엘지이노텍 주식회사	발광소자 및 그 제조방법
US20110284894A1 (en) *	2010-05-24	2011-11-24	Hee Young Beom	Light emitting device, light emitting device package, and lighting device system

Also Published As

Publication number	Publication date
KR20140148098A (ko)	2014-12-31
TW201513393A (zh)	2015-04-01
WO2014204271A1 (en)	2014-12-24

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