TWI623805B - 用於極紫外線微影之空白遮罩及使用其之光罩 - Google Patents
用於極紫外線微影之空白遮罩及使用其之光罩 Download PDFInfo
- Publication number
- TWI623805B TWI623805B TW105112747A TW105112747A TWI623805B TW I623805 B TWI623805 B TW I623805B TW 105112747 A TW105112747 A TW 105112747A TW 105112747 A TW105112747 A TW 105112747A TW I623805 B TWI623805 B TW I623805B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- absorber
- extreme ultraviolet
- absorber film
- ultraviolet lithography
- Prior art date
Links
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims abstract description 45
- 239000006096 absorbing agent Substances 0.000 claims abstract description 123
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 91
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 23
- 239000007769 metal material Substances 0.000 claims abstract description 21
- 239000010948 rhodium Substances 0.000 claims abstract description 20
- 239000010931 gold Substances 0.000 claims abstract description 19
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 17
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052738 indium Inorganic materials 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 13
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 13
- 229910052737 gold Inorganic materials 0.000 claims abstract description 12
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 12
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 7
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims abstract description 7
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 7
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 264
- 239000000203 mixture Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 239000002775 capsule Substances 0.000 claims description 5
- 230000010363 phase shift Effects 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 25
- 239000000126 substance Substances 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 51
- 238000005538 encapsulation Methods 0.000 description 22
- 230000000694 effects Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 239000011651 chromium Substances 0.000 description 12
- 230000003746 surface roughness Effects 0.000 description 9
- 230000008033 biological extinction Effects 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 5
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VMJRMGHWUWFWOB-UHFFFAOYSA-N nickel tantalum Chemical compound [Ni].[Ta] VMJRMGHWUWFWOB-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- -1 nickel-platinum nitride Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
??10-2015-0115198 | 2015-08-17 | ||
KR20150115198 | 2015-08-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201725440A TW201725440A (zh) | 2017-07-16 |
TWI623805B true TWI623805B (zh) | 2018-05-11 |
Family
ID=58315726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105112747A TWI623805B (zh) | 2015-08-17 | 2016-04-25 | 用於極紫外線微影之空白遮罩及使用其之光罩 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101772943B1 (ko) |
TW (1) | TWI623805B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI811610B (zh) * | 2020-01-08 | 2023-08-11 | 南韓商S&S技術股份有限公司 | 用於極紫外光之反射式空白罩幕以及光罩 |
Families Citing this family (32)
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TWI774375B (zh) | 2016-07-27 | 2022-08-11 | 美商應用材料股份有限公司 | 具多層吸收劑的極紫外遮罩坯料及製造方法 |
EP3454119B1 (en) * | 2017-09-09 | 2023-12-27 | IMEC vzw | Euv absorbing alloys |
EP3454120B1 (en) | 2017-09-09 | 2024-05-01 | IMEC vzw | Method for manufacturing euv reticles and reticles for euv lithography |
JP2020034666A (ja) * | 2018-08-29 | 2020-03-05 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
US11119398B2 (en) * | 2018-09-28 | 2021-09-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV photo masks |
TW202026770A (zh) | 2018-10-26 | 2020-07-16 | 美商應用材料股份有限公司 | 用於極紫外線掩模吸收劑的ta-cu合金材料 |
US11194244B2 (en) | 2018-12-21 | 2021-12-07 | Applied Materials, Inc. | Extreme ultraviolet mask absorber and processes for manufacture |
US11249390B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
TWI828843B (zh) | 2019-01-31 | 2024-01-11 | 美商應用材料股份有限公司 | 極紫外線(euv)遮罩素材及其製造方法 |
TW202035792A (zh) | 2019-01-31 | 2020-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收體材料 |
TWI836072B (zh) | 2019-05-22 | 2024-03-21 | 美商應用材料股份有限公司 | 具有嵌入吸收層之極紫外光遮罩 |
TWI836073B (zh) | 2019-05-22 | 2024-03-21 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體及其製造方法 |
TW202104667A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
US11275304B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber matertals |
TW202104666A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
US11385536B2 (en) | 2019-08-08 | 2022-07-12 | Applied Materials, Inc. | EUV mask blanks and methods of manufacture |
KR102473558B1 (ko) * | 2019-10-23 | 2022-12-05 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 하프톤 위상반전 블랭크 마스크 및 포토마스크 |
US11630385B2 (en) | 2020-01-24 | 2023-04-18 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
TW202129401A (zh) | 2020-01-27 | 2021-08-01 | 美商應用材料股份有限公司 | 極紫外線遮罩坯體硬遮罩材料 |
TW202131087A (zh) | 2020-01-27 | 2021-08-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
TWI817073B (zh) | 2020-01-27 | 2023-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體硬遮罩材料 |
US11392036B2 (en) | 2020-01-31 | 2022-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist and method |
TW202141165A (zh) | 2020-03-27 | 2021-11-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
TWI836207B (zh) | 2020-04-17 | 2024-03-21 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
US11300871B2 (en) | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11294271B2 (en) | 2020-04-30 | 2022-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask for extreme ultraviolet photolithography |
TW202202641A (zh) | 2020-07-13 | 2022-01-16 | 美商應用材料股份有限公司 | 極紫外線遮罩吸收劑材料 |
US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11513437B2 (en) | 2021-01-11 | 2022-11-29 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11592738B2 (en) | 2021-01-28 | 2023-02-28 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US20220350233A1 (en) * | 2021-05-03 | 2022-11-03 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
WO2024053634A1 (ja) * | 2022-09-09 | 2024-03-14 | Agc株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
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CN102089860A (zh) * | 2008-07-14 | 2011-06-08 | 旭硝子株式会社 | Euv光刻用反射型掩模基板及euv光刻用反射型掩模 |
TW201514612A (zh) * | 2013-08-28 | 2015-04-16 | Hoya Corp | 光罩基底、光罩基底之製造方法及轉印用光罩之製造方法 |
TW201518855A (zh) * | 2013-11-15 | 2015-05-16 | S&S Tech Co Ltd | 極紫外線微影用空白罩幕以及使用該空白罩幕的光罩 |
US20150198874A1 (en) * | 2012-09-28 | 2015-07-16 | Asahi Glass Company, Limited | Reflective mask blank for euv lithography, method of manufacturing thereof, reflective mask for euv lithography and method of manufacturing thereof |
Family Cites Families (1)
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---|---|---|---|---|
JP2015073013A (ja) | 2013-10-03 | 2015-04-16 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランクの製造方法 |
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2016
- 2016-04-25 TW TW105112747A patent/TWI623805B/zh active
- 2016-04-25 KR KR1020160050066A patent/KR101772943B1/ko active IP Right Grant
Patent Citations (4)
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CN102089860A (zh) * | 2008-07-14 | 2011-06-08 | 旭硝子株式会社 | Euv光刻用反射型掩模基板及euv光刻用反射型掩模 |
US20150198874A1 (en) * | 2012-09-28 | 2015-07-16 | Asahi Glass Company, Limited | Reflective mask blank for euv lithography, method of manufacturing thereof, reflective mask for euv lithography and method of manufacturing thereof |
TW201514612A (zh) * | 2013-08-28 | 2015-04-16 | Hoya Corp | 光罩基底、光罩基底之製造方法及轉印用光罩之製造方法 |
TW201518855A (zh) * | 2013-11-15 | 2015-05-16 | S&S Tech Co Ltd | 極紫外線微影用空白罩幕以及使用該空白罩幕的光罩 |
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TWI811610B (zh) * | 2020-01-08 | 2023-08-11 | 南韓商S&S技術股份有限公司 | 用於極紫外光之反射式空白罩幕以及光罩 |
US11815801B2 (en) | 2020-01-08 | 2023-11-14 | S & S Tech Co., Ltd. | Reflective type blankmask and photomask for EUV |
Also Published As
Publication number | Publication date |
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KR101772943B1 (ko) | 2017-09-12 |
KR20170021191A (ko) | 2017-02-27 |
TW201725440A (zh) | 2017-07-16 |
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