TWI623805B - 用於極紫外線微影之空白遮罩及使用其之光罩 - Google Patents

用於極紫外線微影之空白遮罩及使用其之光罩 Download PDF

Info

Publication number: TWI623805B
Authority: TW; Taiwan
Prior art keywords: film; absorber; extreme ultraviolet; absorber film; ultraviolet lithography
Prior art date: 2015-08-17

Application number

TW105112747A

Other languages

English (en)

Chinese (zh)

Other versions

TW201725440A (zh

Inventor

南基守

申澈

李鍾華

梁澈圭

崔珉箕

金昌俊

Original Assignee

Ｓ＆Ｓ技術股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-08-17

Filing date

2016-04-25

Publication date

2018-05-11

2016-04-25 Application filed by Ｓ＆Ｓ技術股份有限公司 filed Critical Ｓ＆Ｓ技術股份有限公司

2017-07-16 Publication of TW201725440A publication Critical patent/TW201725440A/zh

2018-05-11 Application granted granted Critical

2018-05-11 Publication of TWI623805B publication Critical patent/TWI623805B/zh

Links

238000001900 extreme ultraviolet lithography Methods 0.000 title claims abstract description 45
239000006096 absorbing agent Substances 0.000 claims abstract description 123
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 91
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 34
229910052697 platinum Inorganic materials 0.000 claims abstract description 30
239000000758 substrate Substances 0.000 claims abstract description 29
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
229910052715 tantalum Inorganic materials 0.000 claims abstract description 23
239000007769 metal material Substances 0.000 claims abstract description 21
239000010948 rhodium Substances 0.000 claims abstract description 20
239000010931 gold Substances 0.000 claims abstract description 19
229910052707 ruthenium Inorganic materials 0.000 claims abstract description 17
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 17
229910052759 nickel Inorganic materials 0.000 claims abstract description 15
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
229910052738 indium Inorganic materials 0.000 claims abstract description 14
239000001301 oxygen Substances 0.000 claims abstract description 14
229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
229910052709 silver Inorganic materials 0.000 claims abstract description 14
229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
229910052762 osmium Inorganic materials 0.000 claims abstract description 13
229910052703 rhodium Inorganic materials 0.000 claims abstract description 13
229910052737 gold Inorganic materials 0.000 claims abstract description 12
229910052741 iridium Inorganic materials 0.000 claims abstract description 12
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 11
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
229910052799 carbon Inorganic materials 0.000 claims abstract description 10
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 8
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
239000004332 silver Substances 0.000 claims abstract description 8
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 7
229910052796 boron Inorganic materials 0.000 claims abstract description 7
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 7
GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 7
SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims abstract description 7
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 7
JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims abstract description 7
239000001257 hydrogen Substances 0.000 claims abstract description 6
229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 3
239000010408 film Substances 0.000 claims description 264
239000000203 mixture Substances 0.000 claims description 20
150000001875 compounds Chemical class 0.000 claims description 13
229910052751 metal Inorganic materials 0.000 claims description 13
239000002184 metal Substances 0.000 claims description 13
238000012360 testing method Methods 0.000 claims description 7
229920002120 photoresistant polymer Polymers 0.000 claims description 6
229910052725 zinc Inorganic materials 0.000 claims description 6
239000011701 zinc Substances 0.000 claims description 6
239000002775 capsule Substances 0.000 claims description 5
230000010363 phase shift Effects 0.000 claims description 4
238000002310 reflectometry Methods 0.000 claims description 4
239000010409 thin film Substances 0.000 claims description 3
150000002739 metals Chemical class 0.000 claims description 2
150000002431 hydrogen Chemical class 0.000 claims 1
239000000463 material Substances 0.000 abstract description 25
239000000126 substance Substances 0.000 abstract description 13
239000010410 layer Substances 0.000 description 51
238000005538 encapsulation Methods 0.000 description 22
230000000694 effects Effects 0.000 description 16
238000000034 method Methods 0.000 description 13
239000011651 chromium Substances 0.000 description 12
230000003746 surface roughness Effects 0.000 description 9
230000008033 biological extinction Effects 0.000 description 8
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
229910052750 molybdenum Inorganic materials 0.000 description 7
239000011733 molybdenum Substances 0.000 description 7
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
229910052804 chromium Inorganic materials 0.000 description 6
239000010955 niobium Substances 0.000 description 6
229910052710 silicon Inorganic materials 0.000 description 6
239000010703 silicon Substances 0.000 description 6
238000005530 etching Methods 0.000 description 5
239000007789 gas Substances 0.000 description 5
238000004519 manufacturing process Methods 0.000 description 5
PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 5
CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 4
238000004140 cleaning Methods 0.000 description 4
230000003287 optical effect Effects 0.000 description 4
239000002356 single layer Substances 0.000 description 4
230000002745 absorbent Effects 0.000 description 3
239000002250 absorbent Substances 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
230000000052 comparative effect Effects 0.000 description 3
229910052758 niobium Inorganic materials 0.000 description 3
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
238000010521 absorption reaction Methods 0.000 description 2
239000000460 chlorine Substances 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
238000001459 lithography Methods 0.000 description 2
238000001755 magnetron sputter deposition Methods 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
VMJRMGHWUWFWOB-UHFFFAOYSA-N nickel tantalum Chemical compound [Ni].[Ta] VMJRMGHWUWFWOB-UHFFFAOYSA-N 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
125000004429 atom Chemical group 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
238000011156 evaluation Methods 0.000 description 1
229910052731 fluorine Inorganic materials 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000000671 immersion lithography Methods 0.000 description 1
230000010354 integration Effects 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
238000005259 measurement Methods 0.000 description 1
239000012528 membrane Substances 0.000 description 1
150000002736 metal compounds Chemical class 0.000 description 1
-1 nickel-platinum nitride Chemical class 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
239000002245 particle Substances 0.000 description 1
238000000059 patterning Methods 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
238000005546 reactive sputtering Methods 0.000 description 1
239000000523 sample Substances 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Plasma & Fusion (AREA)
Preparing Plates And Mask In Photomechanical Process (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

TW105112747A 2015-08-17 2016-04-25 用於極紫外線微影之空白遮罩及使用其之光罩 TWI623805B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
??10-2015-0115198		2015-08-17
KR20150115198		2015-08-17

Publications (2)

Publication Number	Publication Date
TW201725440A TW201725440A (zh)	2017-07-16
TWI623805B true TWI623805B (zh)	2018-05-11

Family

ID=58315726

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW105112747A TWI623805B (zh)	2015-08-17	2016-04-25	用於極紫外線微影之空白遮罩及使用其之光罩

Country Status (2)

Country	Link
KR (1)	KR101772943B1 (ko)
TW (1)	TWI623805B (ko)

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TWI811610B (zh) *	2020-01-08	2023-08-11	南韓商S&S技術股份有限公司	用於極紫外光之反射式空白罩幕以及光罩

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TWI774375B (zh)	2016-07-27	2022-08-11	美商應用材料股份有限公司	具多層吸收劑的極紫外遮罩坯料及製造方法
EP3454119B1 (en) *	2017-09-09	2023-12-27	IMEC vzw	Euv absorbing alloys
EP3454120B1 (en)	2017-09-09	2024-05-01	IMEC vzw	Method for manufacturing euv reticles and reticles for euv lithography
JP2020034666A (ja) *	2018-08-29	2020-03-05	Hoya株式会社	反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
US11119398B2 (en) *	2018-09-28	2021-09-14	Taiwan Semiconductor Manufacturing Co., Ltd.	EUV photo masks
TW202026770A (zh)	2018-10-26	2020-07-16	美商應用材料股份有限公司	用於極紫外線掩模吸收劑的ta-cu合金材料
US11194244B2 (en)	2018-12-21	2021-12-07	Applied Materials, Inc.	Extreme ultraviolet mask absorber and processes for manufacture
US11249390B2 (en)	2019-01-31	2022-02-15	Applied Materials, Inc.	Extreme ultraviolet mask absorber materials
TWI828843B (zh)	2019-01-31	2024-01-11	美商應用材料股份有限公司	極紫外線（ｅｕｖ）遮罩素材及其製造方法
TW202035792A (zh)	2019-01-31	2020-10-01	美商應用材料股份有限公司	極紫外光遮罩吸收體材料
TWI836072B (zh)	2019-05-22	2024-03-21	美商應用材料股份有限公司	具有嵌入吸收層之極紫外光遮罩
TWI836073B (zh)	2019-05-22	2024-03-21	美商應用材料股份有限公司	極紫外光遮罩坯體及其製造方法
TW202104667A (zh)	2019-05-22	2021-02-01	美商應用材料股份有限公司	極紫外光遮罩吸收材料
US11275304B2 (en)	2019-05-22	2022-03-15	Applied Materials Inc.	Extreme ultraviolet mask absorber matertals
TW202104666A (zh)	2019-05-22	2021-02-01	美商應用材料股份有限公司	極紫外光遮罩吸收劑材料
US11385536B2 (en)	2019-08-08	2022-07-12	Applied Materials, Inc.	EUV mask blanks and methods of manufacture
KR102473558B1 (ko) *	2019-10-23	2022-12-05	주식회사 에스앤에스텍	극자외선 리소그래피용 하프톤 위상반전 블랭크 마스크 및 포토마스크
US11630385B2 (en)	2020-01-24	2023-04-18	Applied Materials, Inc.	Extreme ultraviolet mask absorber materials
TW202129401A (zh)	2020-01-27	2021-08-01	美商應用材料股份有限公司	極紫外線遮罩坯體硬遮罩材料
TW202131087A (zh)	2020-01-27	2021-08-16	美商應用材料股份有限公司	極紫外光遮罩吸收劑材料
TWI817073B (zh)	2020-01-27	2023-10-01	美商應用材料股份有限公司	極紫外光遮罩坯體硬遮罩材料
US11392036B2 (en)	2020-01-31	2022-07-19	Taiwan Semiconductor Manufacturing Co., Ltd.	Photoresist and method
TW202141165A (zh)	2020-03-27	2021-11-01	美商應用材料股份有限公司	極紫外光遮罩吸收材料
TWI836207B (zh)	2020-04-17	2024-03-21	美商應用材料股份有限公司	極紫外光遮罩吸收材料
US11300871B2 (en)	2020-04-29	2022-04-12	Applied Materials, Inc.	Extreme ultraviolet mask absorber materials
US11294271B2 (en)	2020-04-30	2022-04-05	Taiwan Semiconductor Manufacturing Co., Ltd.	Mask for extreme ultraviolet photolithography
TW202202641A (zh)	2020-07-13	2022-01-16	美商應用材料股份有限公司	極紫外線遮罩吸收劑材料
US11609490B2 (en)	2020-10-06	2023-03-21	Applied Materials, Inc.	Extreme ultraviolet mask absorber materials
US11513437B2 (en)	2021-01-11	2022-11-29	Applied Materials, Inc.	Extreme ultraviolet mask absorber materials
US11592738B2 (en)	2021-01-28	2023-02-28	Applied Materials, Inc.	Extreme ultraviolet mask absorber materials
US20220350233A1 (en) *	2021-05-03	2022-11-03	Applied Materials, Inc.	Extreme ultraviolet mask absorber materials
WO2024053634A1 (ja) *	2022-09-09	2024-03-14	Ａｇｃ株式会社	反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

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2016
- 2016-04-25 TW TW105112747A patent/TWI623805B/zh active
- 2016-04-25 KR KR1020160050066A patent/KR101772943B1/ko active IP Right Grant

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KR101772943B1 (ko)	2017-09-12
KR20170021191A (ko)	2017-02-27
TW201725440A (zh)	2017-07-16

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