TWI620827B - 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜 - Google Patents

透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜 Download PDF

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Publication number
TWI620827B
TWI620827B TW104119074A TW104119074A TWI620827B TW I620827 B TWI620827 B TW I620827B TW 104119074 A TW104119074 A TW 104119074A TW 104119074 A TW104119074 A TW 104119074A TW I620827 B TWI620827 B TW I620827B
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TW
Taiwan
Prior art keywords
component
film
transparent conductive
target
conductive film
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TW104119074A
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English (en)
Chinese (zh)
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TW201538764A (zh
Inventor
湯川富之
武井應樹
小林大士
赤松泰彥
清田淳也
增澤健二
石橋曉
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愛發科股份有限公司
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Publication of TW201538764A publication Critical patent/TW201538764A/zh
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Publication of TWI620827B publication Critical patent/TWI620827B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Non-Insulated Conductors (AREA)
TW104119074A 2009-11-19 2010-11-18 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜 TWI620827B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2009-263966 2009-11-19
JP2009263966 2009-11-19

Publications (2)

Publication Number Publication Date
TW201538764A TW201538764A (zh) 2015-10-16
TWI620827B true TWI620827B (zh) 2018-04-11

Family

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Family Applications (2)

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TW099139744A TWI500786B (zh) 2009-11-19 2010-11-18 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜
TW104119074A TWI620827B (zh) 2009-11-19 2010-11-18 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜

Family Applications Before (1)

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TW099139744A TWI500786B (zh) 2009-11-19 2010-11-18 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜

Country Status (5)

Country Link
JP (2) JP5726752B2 (fr)
KR (4) KR20180063386A (fr)
CN (2) CN102666909B (fr)
TW (2) TWI500786B (fr)
WO (1) WO2011061922A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013012409A (ja) * 2011-06-29 2013-01-17 Toshiro Kuji 透明導電膜の生成方法及び透明導電膜生成装置
CN102651251A (zh) * 2012-05-29 2012-08-29 番禺南沙殷田化工有限公司 一种低温结晶ito透明导电薄膜及其制备方法
CN102945694B (zh) * 2012-11-08 2015-05-20 深圳南玻显示器件科技有限公司 Ito基板及其制备方法
KR102061790B1 (ko) 2013-02-05 2020-02-12 삼성디스플레이 주식회사 유기 발광 표시 장치의 투명전극 제조방법 및 그 투명전극을 구비한 유기 발광 표시 장치
JP5805799B2 (ja) * 2013-05-15 2015-11-10 日本写真印刷株式会社 タッチセンサおよびタッチセンサモジュール
US9988707B2 (en) * 2014-05-30 2018-06-05 Ppg Industries Ohio, Inc. Transparent conducting indium doped tin oxide
CN104746003B (zh) * 2014-12-24 2017-09-26 信利（惠州）智能显示有限公司 氧化铟锡低温镀膜方法
JP6553950B2 (ja) * 2015-05-27 2019-07-31 日東電工株式会社 透明導電性フィルムおよびその製造方法
WO2018047977A1 (fr) * 2016-09-12 2018-03-15 株式会社アルバック Procédé de production de substrat présentant un film conducteur transparent, dispositif de production de substrat présentant un film conducteur transparent et film conducteur transparent
CN106893132B (zh) * 2017-03-30 2019-11-15 维沃移动通信有限公司 一种有机曲面壳体加工方法和有机曲面壳体
CN110546299B (zh) * 2017-05-15 2022-09-30 三井金属矿业株式会社 透明导电膜用溅射靶
WO2019031105A1 (fr) * 2017-08-08 2019-02-14 三井金属鉱業株式会社 Compact fritté d'oxyde et cible de pulvérisation cathodique
CN108149210B (zh) * 2017-12-26 2019-12-31 哈尔滨工业大学 一种长波红外增透保护膜的制备方法
JP7112854B2 (ja) * 2018-02-19 2022-08-04 住友化学株式会社 酸化錫粉末
KR20230015894A (ko) * 2020-05-25 2023-01-31 닛토덴코 가부시키가이샤 광투과성 도전성 시트의 제조 방법
CN117229051B (zh) * 2023-09-21 2024-05-10 株洲火炬安泰新材料有限公司 一种LaTb共掺杂ITO靶材及其制备方法与应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW460964B (en) * 1999-06-28 2001-10-21 Toshiba Corp CMP polishing method and semiconductor manufacturing device
TWI278507B (en) * 2003-05-28 2007-04-11 Hitachi Chemical Co Ltd Polishing agent and polishing method

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2989886B2 (ja) * 1990-11-30 1999-12-13 日東電工株式会社 アナログ式タツチパネル
US5433901A (en) * 1993-02-11 1995-07-18 Vesuvius Crucible Company Method of manufacturing an ITO sintered body
JP3501614B2 (ja) * 1997-02-26 2004-03-02 株式会社オプトロン Ｉｔｏ焼結体およびその製造方法ならびに前記ｉｔｏ焼結体を用いたｉｔｏ膜の成膜方法
JP2000054115A (ja) * 1998-07-31 2000-02-22 Oputoron:Kk Ｉ．ｔ．ｏ焼結体の製造方法及びｉ．ｔ．ｏ薄膜の形成方法
KR100744017B1 (ko) * 2001-06-26 2007-07-30 미츠이 긴조쿠 고교 가부시키가이샤 고저항 투명 도전막용 스퍼터링 타겟 및 고저항 투명도전막의 제조방법
JP4324470B2 (ja) * 2001-08-02 2009-09-02 出光興産株式会社 スパッタリングターゲット、透明導電膜およびそれらの製造法
JP4285019B2 (ja) * 2003-02-07 2009-06-24 住友金属鉱山株式会社 透明導電性薄膜とその製造方法、それを用いた表示パネル用透明導電性基材及びエレクトロルミネッセンス素子
JP2007176706A (ja) * 2005-12-26 2007-07-12 Mitsui Mining & Smelting Co Ltd 酸化物焼結体及びその製造方法並びにスパッタリングターゲット及び透明導電膜
JP2007238365A (ja) * 2006-03-07 2007-09-20 Mitsui Mining & Smelting Co Ltd 酸化物焼結体及びその製造方法並びにスパッタリングターゲット及び透明導電膜
JP5298408B2 (ja) * 2006-05-16 2013-09-25 株式会社ブリヂストン 結晶性ｉｔｏ薄膜の成膜方法、結晶性ｉｔｏ薄膜及びフィルム、並びに抵抗膜式タッチパネル
JP5000230B2 (ja) * 2006-08-10 2012-08-15 出光興産株式会社 酸化ランタン含有酸化物ターゲット
JP2008179850A (ja) 2007-01-24 2008-08-07 Toshiba Matsushita Display Technology Co Ltd アモルファスｉｔｏ膜の成膜方法およびその装置
JP5306179B2 (ja) * 2007-03-20 2013-10-02 出光興産株式会社 スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
JP5244331B2 (ja) * 2007-03-26 2013-07-24 出光興産株式会社 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
US9249032B2 (en) * 2007-05-07 2016-02-02 Idemitsu Kosan Co., Ltd. Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element
JP4807331B2 (ja) * 2007-06-18 2011-11-02 住友金属鉱山株式会社 酸化インジウム系スパッタリングターゲットの製造方法
WO2009011232A1 (fr) * 2007-07-13 2009-01-22 Nippon Mining & Metals Co., Ltd. Fritte d'oxyde composite, procédé de fabrication d'un film d'oxyde composite amorphe, film d'oxyde composite amorphe, procédé de fabrication d'un film d'oxyde composite cristallin et film d'oxyde composite cristallin
JP5237827B2 (ja) * 2007-10-03 2013-07-17 三井金属鉱業株式会社 酸化インジウム系ターゲット
JP5362231B2 (ja) * 2008-02-12 2013-12-11 株式会社カネカ 透明導電膜の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW460964B (en) * 1999-06-28 2001-10-21 Toshiba Corp CMP polishing method and semiconductor manufacturing device
TWI278507B (en) * 2003-05-28 2007-04-11 Hitachi Chemical Co Ltd Polishing agent and polishing method

Also Published As

Publication number Publication date
WO2011061922A1 (fr) 2011-05-26
CN102666909A (zh) 2012-09-12
TW201124546A (en) 2011-07-16
KR20180063386A (ko) 2018-06-11
KR20120070597A (ko) 2012-06-29
JP6060202B2 (ja) 2017-01-11
JPWO2011061922A1 (ja) 2013-04-04
CN104213085A (zh) 2014-12-17
CN102666909B (zh) 2016-06-22
KR20170005149A (ko) 2017-01-11
KR20140071502A (ko) 2014-06-11
TW201538764A (zh) 2015-10-16
JP5726752B2 (ja) 2015-06-03
TWI500786B (zh) 2015-09-21
JP2015158014A (ja) 2015-09-03

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