TWI619171B - 障壁層 - Google Patents
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Abstract
本發明係提供多種用於製造積體電路電互連體的方法和電互連體。該等方法包括提供一具有一表面的基體,該表面具有一形成於其中的形貌體,其中該形貌體是一溝或一通孔;在該形貌體的表面上沉積一金屬層,該金屬層的金屬是選自於由Ru、Co、Pt、Ir、Pd、Re及Rh所組成的群組;在該金屬層上沉積一銅晶種層,其中該銅晶種層包含一摻雜質且該摻雜質是選自於由Mn、Mg、MgB2、P、B、Al、Co及其等之組合物所組成的群組;以及將銅沉積至該形貌體中。本發明係提供多種包含具有金屬內襯層之銅互連體的裝置。本發明係提供多種具有含釕內襯層的裝置。
Description
本發明的具體實施例大體係有關於半導體製程、積體電路、用於金屬互連體的障壁層、低k介電質,以及在半導體製程應用中沉積期間的間隙填充。
越來越小的積體電路(IC)的推動對於用以構建IC裝置的材料有龐大的性能需求。一般而言,一積體電路晶片亦已知為一微晶片、矽晶片或晶片。IC晶片被發現在各種常見的裝置中,諸如電腦中的微處理器、汽車、電視機、CD播放機及手機。多個IC晶片典型地是建立在一矽晶圓(一薄矽盤,具有一如300mm之直徑)上,且在處理後,該晶圓被切塊分開以產生個別的晶片。一個具有形貌體尺寸約為90nm之1cm2的IC晶片可包含數億的組件。目前的技術正推動比45nm還要小的形貌體尺寸。
依據本發明之一實施例,係特地提出一種方法,其包含:提供一具有一表面的基體,該表面具有一形成於其中的形貌體,其中該形貌體是位於該基體表面中的一凹陷且其中該形貌體具有至少一表面;在該形貌體的該至少一表面上沉積一金屬層,該金屬層的金屬是選自於由Ru、Co、Pt、Ir、Pd、Re及Rh所組成的群組;在該金屬層上沉積一
銅晶種層,其中該銅晶種層包含一摻雜質且該摻雜質是選自於由Mn、Mg、MgB2、P、B、Al、Co及其等之組合物所組成的群組;以及將銅沉積至該形貌體中。
第1圖顯示用於一積體電路晶片的一互連體構造,其具有介於金屬互連體與組成該積體電路晶片之其它材料(例如,介電質材料)之間的障壁層。
第2A-D圖展示一形成一障壁層的過程,該障壁層有利於形成用於積體電路晶片的金屬互連體構造。
第3圖描述一形成一障壁層的過程,該障壁層有利於用於積體電路晶片的金屬互連體構造。
在一積體電路(IC)晶片中之電子裝置(如電晶體)之間的電子連接,目前典型地是使用銅金屬或銅金屬合金來產生。一IC晶片中的多個裝置不僅可以被放置在該IC晶片表面各處,多個裝置也可以被堆疊在該IC晶片上的多個層中。在組成IC晶片之電子裝置之間的電互連體是使用溝及通孔來建立,該等溝及通孔被填充有導電材料。絕緣材料層,時常是低k介電質材料,係使IC晶片中的各種組件和裝置分隔。
其上建立有IC電路晶片裝置的基體是,例如,一矽晶圓或一矽絕緣體基體。矽晶圓是半導體製程產業中典型被使用的基體,雖然本發明的具體實施例並不依賴於所使用
的基體類型。基體也可包含有鍺、銻化銦、碲化鉛、砷化銦、磷化銦、砷化鎵、銻化鎵和/或其它III-V族材料,其等不是單獨就是與矽或二氧化矽或其它絕緣材料組合。組成晶片的IC裝置係被建立在該基體表面上。
至少一介電質層被沉積在基體上。介電質材料包括,但不限於,二氧化矽(SiO2)、低k介電質、矽氮化物,和/或矽氧氮化物。該介電質層選擇性地包括孔洞或其它空隙,以進一步降低其介電質常數。典型地,低k薄膜被認為是任何具有一介電質常數小於SiO2之介電質常數的薄膜,SiO2具有一介電質常數約為4.0。具有約3至約2.7之介電質常數的低k薄膜在目前半導體製造製程中是典型的。積體電路裝置構造的生成往往還包括放置一個二氧化矽(SiO2)薄膜或層,或在低-k(低介電質常數)ILD(層間介電質)薄膜的表面上覆蓋一層。低-k薄膜可以是,例如,硼、磷或碳摻雜矽氧化物。碳摻雜矽氧化物也可以指摻雜碳的氧化物(CDOs)和有機矽酸鹽玻璃(OSGs)。
為了要形成電互連體,介電質層被圖案化以產生一或多個金屬互連體將被形成在其中的溝及/或通孔。此處使用術語溝及通孔是因為這些術語通常是與被使用來形成金屬互連體的形貌體有關。一般而言,用來形成金屬互連體的形貌體是一形成於一基體中或沉積在該基體上之層中的具有任何形狀的凹陷。該形貌體被填充有導電互連體材料。溝和/或通孔可以是使用傳統的濕式或乾式蝕刻半導體製程技術來圖案化(產生)。介電質材料被用來隔離電性金屬互
連體與周圍組件。障壁層被用於金屬互連體與介電質材料之間,以防止金屬(諸如銅)遷移到周圍材料中。裝置故障可能會發生在,例如,銅金屬與介電質材料接觸的情況下,因為銅金屬會被離子化並滲透到介電質材料內。被放置在一介電質材料、矽及/或其它材料與銅互連體之間的障壁層也可用於促進銅對其它材料的附著力。脫層(由於材料之間的劣附著性)也是一在IC晶片製造中會遇到之導致裝置故障的難題。
本發明具體實施例提供作為位於銅構造和其它IC晶片形貌體之間之障壁的材料層。有利地,本發明具體實施例提供表現出一比傳統障壁材料,諸如鉭(Ta)、TaN、鈦(Ti)、TiN及WN,低之電阻率的內襯(障壁)。本發明具體實施例不需要使用傳統的障壁層,諸如,如TaN、TiN及WN。額外有利地,本發明具體實施例使得在銅沉積至溝和/或通孔期間可以使用更薄和/或不連續的銅晶種層;隨著形貌體規模越來越小,這使得在溝和/或通孔中可以有完整的間隙填充。間隙填充在高縱橫比形貌體中特別是個問題。
第1圖提供了一個具有一障壁層的電互連體構造。在第1圖中,一用於積體電路晶片的金屬通孔105(或溝)係藉由一襯在該通孔105(或溝)之底部與側邊的障壁層110來與裝置的其它組件分隔。金屬通孔105基本上是在介電質層115中的一凹陷。在此具體實施例中,障壁層110在介電質層115和金屬通孔105之間提供了一障壁。該介電質層115可以是,例如,經常被提到作為一層間介電質層(ILD)者。此外,
在此具體實施例中,該裝置額外以一由裝置製造所用製程生成的蝕刻停止層120為特徵。蝕刻停止層可由一介電質材料形成,諸如,如氮化矽、矽氧氮化物和/或碳化矽。可選擇地,第1圖的金屬互連體是與一額外的金屬互連體構造116呈電氣通信。用於互連體的金屬是,例如銅、鋁(Al)、金(Au)、銀(Ag)和/或其等之合金。在本發明的一些具體實施例中,用於互連體的金屬是銅或銅合金。
在第1圖中,障壁層110是包含一已經以一第二材料改質過的薄釕(Ru)層,該第二材料已經與該Ru層及/或與Ru層接觸的介電質材料之表面相互作用。該薄釕層典型地包含結晶域且因為晶界而未對銅的遷移產生適當的障壁。該Ru層及/或與該Ru層接觸的介電質材料藉由第二材料的轉化產生出一障壁層110來阻擋銅的遷移。該第二材料是,例如,錳(Mn),鎂(Mg),及/或二硼化鎂(MgB2)。該釕層的平均厚度介於1nm與4nm之間。該第二材料在障壁層中的存在量是介於釕之1和10原子重量百分比之間。
在另外的具體實施例中,自我形成之障壁層110是一已被一第二材料改質過的鈷(Co)、鉑(Pt)、銥(Ir)、鈀(Pd)、錸(Re)或銠(Rh)薄金屬層。該第二材料已經與該第一材料薄層(Co、Pt、Ir、Pd、Re或Rh)及/或周圍介電質相互作用以形成一對銅遷移之障壁。該第二材料是Mn、Mg、硼(B)、MgB2、磷(P)、(鋁)Al、Co或其等之組合物。該第二材料能夠,例如,填充薄金屬層之金屬晶界,及/或在遷移通過該薄金屬層後與ILD相互作用以形成一障壁。一熱退火製程可
以促進該第二材料的流動性及/或反應性。該薄金屬層的平均厚度介於1nm和4nm之間。該第二材料在障壁層中的存在量是介於第一材料之1和10原子重量百分比之間。
在本發明具體實施例中,第二材料(Mn、Mg、B、MgB2、P、Al、Co,或其等之組合物)不一定是均勻地分佈於障壁層內。例如,硼可以優先遷移通過障壁層的金屬且累積在溝或通孔側的表面上(例如,在介電質材料的表面上)。
在本發明一具體實施例中,障壁層110是釕與一第二材料Mn的組合。在進一步的具體實施例中,為障壁層之部分的Mn的存在量是介於釕之1和5 at.%之間。在本發明的另外具體實施例中,障壁層110是釕,而第二材料是Mg和B的組合物。在進一步的具體實施例中,為障壁層之部分的Mg和B的存在量是介於釕之1和5 at.%之間。
本發明具體實施例中有利的是,沒有鉭(Ta)或TaN附著層與自我形成之障壁層一起被使用。Ta、TaN、Ti、TiN或WN附著(內襯)層之省略避免了在電互連體構造中由附著層所提供之阻力的增加。附加地,如在此被討論的,在互連體構造形成期間,使用與自我形成障壁層不連續的銅晶種層是可行的。銅晶種層的放寬要求使較小形貌體及具有較高縱橫比之形貌體得以使用諸如電沉積(電鍍)之金屬填充技術來形成。
第2A-D圖顯示一製程,其係用以為金屬互連體構造產生一障壁層。在第2A圖中,一擬被一導電材料填充以產生一電互連體的間隙構造205(如一溝或通孔或凹陷)是被提供
在一基體210中。間隙205是在後端金屬化過程期間被填充的典型通孔類型;在該過程中,半導體裝置(如電晶體)係在一積體電路晶片中互連。間隙構造是,例如,被蝕刻至一包含一介電質材料的ILD層215中。該介電質材料是,例如,二氧化矽、低k介電質及/或其它介電質材料。第2圖中的層220是一在裝置製造期間被產生的蝕刻停止層。金屬構造225是一電氣裝置互連體且包含一導電金屬,諸如,例如,銅金屬和銅金屬合金、鎢金屬或鎢金屬合金。一薄金屬層230是藉由例如原子層沉積(ALD)、化學氣相沉積(CVD)或物理氣相沉積(PVD)被沉積出,且第2B圖的構造被獲得。薄金屬層230係包含Ru、Co、Pt、Ir、Pd、Re或Rh。在本發明具體實施例中,金屬層230是釕。一含有銅及一摻雜質的銅晶種層235被沉積至該構造上,而第2C圖的構造被獲得。該摻雜質是例如Mn、Mg、MgB2、B、P、Al、Co或其等之組合物。在本發明具體實施例中,摻雜質是Mn或MgB2。摻雜質在該銅晶種層235中的存在量是該晶種層的1-20原子百分率(at.%)。晶種層是被沉積,例如,藉由PVD(電漿氣相沉積)、CVD(化學氣相沉積)或ALD。可選擇地,晶種層是一薄不連續層。第2C圖顯示一不連續銅晶種層235。在第2C圖的具體實施例中,銅晶種層235沒有完全覆蓋金屬層230。銅互連體240材料(或其它導電材料)被接著電沉積且該構造被退火以提供第2D圖的裝置。退火處理被完成,例如,藉由將該構造加熱至350-400℃達2小時。其它溫度和退火時間也都可行。退火後,銅的遷移不能通過障壁層231。障
壁層231的不透性被引起,其是因為摻雜質從銅晶種層235遷移至及/或通過金屬層230。摻雜質的行為部分依賴於被選擇用於金屬層230的金屬及銅晶種層235中的摻雜質。在一些事例中,摻雜質跨過金屬層230且與介電質層215相互作用以形成一障壁層231。在其它事例中,摻雜質進入金屬層230或發生兩種機制的組合。
在第2A-D圖的具體實施例中,一不連續的晶種層被顯示。晶種層可以是連續或不連續。
第3圖描述一製程,其係用於形成用於後端金屬化的障壁層,例如,形成銅互連體以供用於積體電路晶片所用的電晶體裝置。在第3圖中,一溝或通孔被提供,其係要被導電金屬填充以形成一導電互連體。該溝或通孔是一典型在一諸如一ILD層之介電質層中形成的凹陷,其係透過一被使用於半導體產業的蝕刻製程。該溝或通孔的壁和底部(凹陷的側邊)被塗覆上一包含Ru、Co、Pt、Ir、Pd、Re或Rh的薄金屬層。該薄金屬層是以例如ALD、CVD或PVD被沉積出。包含一摻雜質的銅晶種層接著被沉積出。該銅晶種層是以例如ALD、CVD或PVD被沉積出。有利地,該銅晶種層可以是連續或不連續的。不連續的銅晶種層允許一較薄晶種層被沉積出,且在小形貌體要被金屬填充的情況下,有潛力能避免軋掉形貌體。如果一形貌體被軋掉,則會在互連體的金屬中形成一不想要的間隙,而會導致裝置故障。在本發明具體實施例中,銅晶種層具有一平均為3至10nm的厚度。溝或通孔接著藉由一電沉積製程(電化學電鍍)被填充
以金屬。退火該構造提供一具有障壁層以阻止金屬互連體材料遷移到周圍材料中的電互連體構造。
一般而言,一電沉積製程包含將一金屬從一電解質溶液沉積到一半導體基體上,該電解質溶液包含該要被沉積之金屬的離子。一負偏壓被置於該基體上。該電解質溶液可以是指一鍍浴或一電鍍浴。該金屬的正離子被該負偏壓基體所吸引。該負偏壓基體還原離子,而金屬沉積至該基體上。
在相關技藝中之熟悉技藝者會理解到修飾與變化在整個揭露內容和所示與所描述的各種組件的組合與替換上是可行的。本說明書中各處所提及的“具體實施例”表示一被描述於該具體實施例中的特定形貌體、構造、材料或特徵被包括於本發明至少一具體實施例中,但不一定意味它們存在於每一具體實施例中。此外,該特定形貌體、構造、材料或特徵可在一或更多的具體實施例中以任何合適的方式組合。在其它具體實施例中,各種額外的層及/或構造可被包括,及/或被描述的形貌體可被省略。
105‧‧‧通孔、溝
110‧‧‧障壁層
115‧‧‧介電質層
116‧‧‧金屬互連體構造
120‧‧‧蝕刻停止層
205‧‧‧間隙(構造)
210‧‧‧基體
215‧‧‧(層間)介電質層、ILD層
220‧‧‧(蝕刻停止)層
225‧‧‧金屬構造
230‧‧‧金屬層
235‧‧‧銅晶種層
231‧‧‧障壁層
240‧‧‧銅互連體
第1圖顯示用於一積體電路晶片的一互連體構造,其具有介於金屬互連體與組成該積體電路晶片之其它材料(例如,介電質材料)之間的障壁層。
第2A-D圖展示一形成一障壁層的過程,該障壁層有利於形成用於積體電路晶片的金屬互連體構造。
第3圖描述一形成一障壁層的過程,該障壁層有利於用
於積體電路晶片的金屬互連體構造。
Claims (22)
- 一種用以形成一障壁層之方法,其包含:提供一具有一表面的基體,該表面具有一形成於其中的形貌體,其中該形貌體是位於該基體表面中的一凹陷,其中該基體表面包含一介電質材料,且該形貌體係形成於該介電質材料中,且其中該形貌體具有至少一表面;在該形貌體的該至少一表面上沉積一金屬層,該金屬層的金屬是選自於由Pt、Ir、Pd、Re及Rh所組成的群組;在該金屬層上沉積一銅晶種層,其中該銅晶種層包含一摻雜質且該摻雜質是選自於由Mg、MgB2、P、B、Al、Co及其等之組合物所組成的群組;以及將銅沉積至該形貌體中。
- 如申請專利範圍第1項的方法,其中該銅晶種層是一不連續的層。
- 如申請專利範圍第1項的方法,其中該摻雜質在該銅晶種層中的存在量是從1至20原子重量百分比。
- 如申請專利範圍第1項的方法,其中該銅是藉由電沉積被沉積至該形貌體中。
- 如申請專利範圍第1項的方法,其亦包括在銅晶種層沉積之後退火該基體。
- 如申請專利範圍第1項的方法,其中一由如申請專利範圍第1項的方法生成的被銅填充的形貌體不具有在該銅 與該介電質材料之間之一含Ti、Ta或W的層。
- 如申請專利範圍第1項的方法,其中該形貌體為一溝或一通孔。
- 一種電子裝置,其包含:一基體,其具有一層之介電質材料位在該基體之一表面上,該介電質材料具有一形成於其中的形貌體,其中該形貌體是一在該介電質材料中的凹陷,其中該形貌體具有至少一側壁且該形貌體之該側壁被塗覆上一障壁層,其中該障壁層是包含一金屬與一物質,該金屬是選自於由Pt、Ir、Pd、Re及Rh所組成的群組,該物質是選自於由Mg、MgB2、P、B、Al及Co所組成的群組,其中該物質在該障壁層中的存在量是選自於由Pt、Ir、Pd、Re及Rh所組成的群組之該金屬之從1至10原子重量百分比,其中該形貌體含有銅且其中該障壁層是位於該銅與該介電質材料之間,其中該形貌體不包含在該銅與該介電質材料之間之一含Ti、Ta或W的層。
- 如申請專利範圍第8項的裝置,其中該障壁層的厚度是介於1與4nm之間。
- 如申請專利範圍第8項的裝置,其中該形貌體是一溝或通孔。
- 一種電子裝置,其包含:一基體,其具有一層之介電質材料位於該基體之一表面上,該介電質材料具有一形成於其中的形貌體,其中該形貌體是一在該介電質材料中的凹陷,其中該形貌 體具有至少一側壁且其中該形貌體之該側壁被塗覆上一障壁層,其中該障壁層是包含釕與一物質,該物質是選自於由B、MgB2、P、Al、及Co所組成的群組,其中該物質在該障壁層中的存在量是釕之從1至10原子重量百分比,其中該形貌體含有銅且其中該障壁層是位於該銅與該介電質材料之間,其中該形貌體不包含在該銅與該介電質材料之間之一含Ti、Ta或W的層。
- 如申請專利範圍第11項的裝置,其中該障壁層的厚度是介於1與4nm之間。
- 如申請專利範圍第11項的裝置,其中該形貌體是一溝或通孔。
- 一種電子裝置,其包含:一基體,其具有一層之介電質材料位於該基體之一表面上,該介電質材料具有一形成於其中的形貌體,其中該形貌體是一在該介電質材料中的凹陷,其中該形貌體具有至少一側壁且其中該形貌體之該側壁被塗覆上一障壁層,其中該障壁層是包含釕與一物質,該物質是選自於由MgB2、及Al所組成的群組,其中該形貌體含有銅且其中該障壁層是位於該銅與該介電質材料之間,其中該形貌體不包含在該銅與該介電質材料之間之一含Ti、Ta或W的層。
- 如申請專利範圍第14項的裝置,其中該物質在該障壁層中的存在量是釕之從1至10原子重量百分比。
- 如申請專利範圍第14項的裝置,其中該物質為MgB2且 在該障壁層中的存在量是釕之從1至5原子重量百分比。
- 如申請專利範圍第14項的裝置,其中該障壁層的厚度是介於1與4nm之間。
- 如申請專利範圍第14項的裝置,其中該形貌體是一溝或通孔。
- 一種電子裝置,其包含:一基體,其具有一層之介電質材料位於該基體之一表面上,該介電質材料具有一形成於其中的形貌體,其中該形貌體是一在該介電質材料中的凹陷,其中該形貌體具有至少一側壁且該形貌體之該側壁被塗覆上一障壁層,其中該障壁層是包含一金屬與一物質,該金屬是選自於由Pt、Ir、Pd、Re及Rh所組成的群組,該物質是選自於由Mg、MgB2、P、B、Co及Al所組成的群組,其中該形貌體含有銅且其中該障壁層是位於該銅與該介電質材料之間,其中該形貌體不包含在該銅與該介電質材料之間之一含Ti、Ta或W的層。
- 如申請專利範圍第19項的裝置,其中該物質在該障壁層中的存在量是選自於由Pt、Ir、Pd、Re及Rh所組成的群組之該金屬之從1至10原子重量百分比。
- 如申請專利範圍第19項的裝置,其中該障壁層的厚度是介於1與4nm之間。
- 如申請專利範圍第19項的裝置,其中該形貌體是一溝或通孔。
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US20120077053A1 (en) | 2012-03-29 |
TW201220402A (en) | 2012-05-16 |
WO2012040733A3 (en) | 2012-06-21 |
US8508018B2 (en) | 2013-08-13 |
WO2012040734A3 (en) | 2012-06-07 |
WO2012040734A2 (en) | 2012-03-29 |
WO2012040733A2 (en) | 2012-03-29 |
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