TWI615958B - 影像傳感晶片封裝結構及封裝方法 - Google Patents

影像傳感晶片封裝結構及封裝方法 Download PDF

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TWI615958B
TWI615958B TW105132983A TW105132983A TWI615958B TW I615958 B TWI615958 B TW I615958B TW 105132983 A TW105132983 A TW 105132983A TW 105132983 A TW105132983 A TW 105132983A TW I615958 B TWI615958 B TW I615958B
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Taiwan
Prior art keywords
layer
image sensing
electrical connection
solder
opening
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TW105132983A
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English (en)
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TW201715718A (zh
Inventor
王之奇
王卓偉
謝國梁
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蘇州晶方半導體科技股份有限公司
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Priority claimed from CN201510712496.XA external-priority patent/CN105244359B/zh
Priority claimed from CN201520848168.8U external-priority patent/CN205159326U/zh
Application filed by 蘇州晶方半導體科技股份有限公司 filed Critical 蘇州晶方半導體科技股份有限公司
Publication of TW201715718A publication Critical patent/TW201715718A/zh
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Abstract

本發明提供了一種影像傳感晶片封裝結構，包括：影像傳感晶片，其具有相對的第一表面和第二表面，在第一表面上設置有影像傳感區以及位於影像傳感區周圍的焊墊；從第二表面貫通至焊墊的通孔；沿通孔內壁設置並延伸至第二表面的電連線層，所述電連線層與所述焊墊電連接；填充通孔並覆蓋電連線層的阻焊層，阻焊層中形成有開口，所述開口底部暴露出所述電連線層；覆蓋所述開口內壁和開口底部並延伸至阻焊層上的導引焊墊，所述導引焊墊與所述電連線層電連接；位於導引焊墊上的焊接凸點，所述焊接凸點與所述導引焊墊電連接。該結構降低影像傳感晶片電連線層的缺陷。

Description

影像傳感晶片封裝結構及封裝方法
本發明涉及半導體技術領域，尤其涉及一種影像傳感晶片封裝結構及封裝方法。
目前，晶圓級封裝(Wafer Level Packaging)技術是對整片晶圓進行測試封裝後再進行切割，得到單個成品晶片的技術，其逐漸取代打線接合封裝技術，成為封裝的主流技術。
在影像感測器的封裝中，也多採用晶圓級封裝技術。圖1為習知傳統的影像感測器封裝結構。該結構包括影像傳感晶片10和保護蓋板200，影像傳感晶片的第一表面上設置有影像傳感區12和焊墊14，保護蓋板200設置在影像傳感區12上方，用於保護影像傳感區。通常，保護蓋板200由玻璃基板210和玻璃基板210上的支撐結構24組成，支撐結構24圍成空腔，在支撐結構24鍵合到影像傳感區所在的第一表面後，將影像傳感區12罩在空腔中，起到保護影像傳感區的作用。在影像傳感晶片的第二表面上設置有貫通至焊墊14的導孔以及與導孔電連接的焊接凸點22，從而，實現與外部的電連接，導孔包括通孔中及通孔側面的第二表面上的絕緣層16、電連線層18和阻焊層20，焊接凸點22形成在導孔側面的電連線層18上，從而實現外部與焊墊的電連接。
然而，在該結構中，電連線層18設置在阻焊層20和絕緣層16之間，絕緣層16多採用有機材料形成，由於阻焊層20和絕緣層16的熱膨脹係數較大，在後續的可靠度測試中會有溫度的變化，阻焊層20和絕緣層16膨脹後，電連線層受到擠壓，使其容易產生虛接甚至斷裂的缺陷。
有鑑於此，本發明的第一方面提供了一種影像傳感晶片封裝結構，以降低影像傳感晶片電連線層的缺陷。
為解決上述問題，本發明實施例提供了一種影像傳感晶片封裝結構，包括：影像傳感晶片，其具有相對的第一表面和第二表面，在第一表面上設置有影像傳感區以及位於影像傳感區周圍的焊墊；從第二表面貫通至焊墊的通孔；沿通孔內壁設置並延伸至第二表面的電連線層，所述電連線層與所述焊墊電連接；填充通孔並覆蓋電連線層的阻焊層，阻焊層中形成有開口，所述開口底部暴露出所述電連線層；覆蓋所述開口內壁和開口底部並延伸至阻焊層上的導引焊墊，所述導引焊墊與所述電連線層電連接；位於導引焊墊上的焊接凸點，所述焊接凸點與所述導引焊墊電連接。
可選地，所述導引焊墊的形狀為圓形。
可選地，所述影像傳感晶片封裝結構還包括電連線之下通孔側壁以及第二表面上的鈍化層。
可選地，所述阻焊層的材質為阻焊感光油墨。
可選地，所述影像傳感晶片封裝結構還包括：遮光層，位於第二表面上且覆蓋所述影像傳感區。
可選地，所述影像傳感晶片封裝結構還包括：與所述影像感測器晶片的影像傳感區對位元壓合的保護蓋板，所述保護蓋板對位壓合至所述影像傳感晶片的第一表面。
可選地，所述保護蓋板為光學玻璃，光學玻璃的至少一個表面上設置有防反射層。
此外，本發明還提供了一種影像傳感晶片的封裝方法，包括：提供晶圓，具有多顆陣列排列的影像傳感晶片，其具有相對的第一表面和第二表面，在影像傳感晶片的第一表面上設置影像傳感區以及位於影像傳感區周圍的焊墊；從第二表面形成貫通至焊墊的通孔； 在通孔內壁及第二表面上形成電連線層，其中，所述電連線層與所述焊墊電連接；形成阻焊層，所述阻焊層填充通孔並覆蓋電連線層，阻焊層中形成有開口，所述開口底部暴露所述電連線層；在開口中形成導引焊墊，其中，所述導引焊墊覆蓋所述開口內壁和開口底部並延伸至阻焊層上，並且與所述電連線層電連接；在導引焊墊上形成焊接凸點以使得所述焊接凸點與所述導引焊墊電連接。
可選地，形成阻焊層至形成焊接凸點的步驟包括：形成阻焊層，以填充通孔並覆蓋電連線層；在阻焊層中形成開口，開口暴露第二表面上的電連線層；在開口內壁及開口外的阻焊層上形成導引焊墊；在導引焊墊上形成焊接凸點。
可選地，在形成通孔之後、電連線層之前，所述封裝方法還包括：在通孔側壁以及第二表面上形成鈍化層。
可選地，形成所述鈍化層的步驟包括：沉積鈍化層；蝕刻去除通孔底部的鈍化層。
可選地，在形成通孔之前，還包括：在第二表面對應影像傳感區的位置形成遮光層。
可選地，所述封裝方法還包括：提供保護蓋板，並將其與所述影像感測器晶片的影像傳感區對位元壓合，其中，所述保護蓋板對位壓合至所述影像傳感晶片的第一表面。
可選地，所述保護蓋板為光學玻璃，光學玻璃的至少一個表面上設置有防反射層。
本發明實施例提供的影像傳感晶片封裝結構及其封裝方法，不直接將焊接凸點設置於電連線層上，而是在焊接凸點下表面與電連線層之間形成有導引焊墊，避免在後續焊接凸點工藝以及其他測試中，對電連線層的熱衝擊，對電連線層起到保護的作用，防止電連線層產生虛接甚至斷裂的缺陷。此外，導引焊墊形成在阻焊層的開口內壁和開口底部及開口外的阻焊層表面上，僅開口底部的導引焊墊與電連線層連接，而焊接凸點透過導引焊墊與電連線層電連接，這樣，導引焊墊與焊接凸點匹配，在與焊接凸點 的連接處，電連線層無需設置與焊接凸點匹配的端部，使得電連線層可以更密集的設置，大大提高器件的積體度，實現器件進一步的小型化。
進一步地，電連線層下設置鈍化層，來作為電連線層的絕緣層，鈍化層具有小的膨脹係數，使得電連線層由於熱膨脹受到的擠壓力大大減小，進一步降低影像傳感晶片電連線層的缺陷。
10、100‧‧‧影像傳感晶片
12、102‧‧‧影像傳感區
14、104‧‧‧焊墊
16‧‧‧絕緣層
18、108‧‧‧電連線層
20、120‧‧‧阻焊層
22、122‧‧‧焊接凸點
24、220‧‧‧支撐結構
105‧‧‧通孔
106‧‧‧鈍化層
107‧‧‧導引焊墊
109‧‧‧開口
200‧‧‧保護蓋板
201‧‧‧防反射層
210‧‧‧玻璃基板
1000‧‧‧晶圓
1001‧‧‧第一表面
1002‧‧‧第二表面
1100‧‧‧切割道區域
圖1顯示出了習知技術的影像傳感晶片封裝結構的剖面結構示意圖；圖2顯示出了根據本發明一實施例的影像傳感晶片封裝結構的剖面結構示意圖；圖3顯示出了根據本發明另一實施例的影像傳感晶片封裝結構的剖面結構示意圖；圖4至圖15顯示出了本發明實施例的影像傳感晶片的封裝方法中所形成的中間結構的結構示意圖。
為使本發明的上述目的、特徵和優點能夠更加明顯易懂，下面結合附圖對本發明的具體實施方式做詳細的說明。
在下面的描述中闡述了很多具體細節以便於充分理解本發明，但是本發明還可以採用其他不同於在此描述的其它方式來實施，本領域技術人員可以在不違背本發明內涵的情況下做類似推廣，因此本發明不受下面公開的具體實施例的限制。
其次，本發明結合示意圖進行詳細描述，在詳述本發明實施例時，為便於說明，表示器件結構的剖面圖會不依一般比例作局部放大，而且所述示意圖只是示例，其在此不應限制本發明保護的範圍。此外，在實際製作中應包含長度、寬度及深度的三維空間尺寸。另外，以下描述的第一特徵在第二特徵之“上”的結構可以包括第一和第二特徵形成為直接接觸的實施例，也可以包括另外的特徵形成在第一和第二特徵之間的實施例，這樣第一和第二特徵可能不是直接接觸。
為了降低影像傳感晶片的缺陷，尤其是電連線層的缺陷，本發明提出了一種影像傳感晶片封裝結構，參考圖2和圖3所示，其包括： 影像傳感晶片100，其具有相對的第一表面1001和第二表面1002，在第一表面上設置有影像傳感區102以及位於影像傳感區周圍的焊墊104；從第二表面1002貫通至焊墊104的通孔105；沿通孔105內壁設置並延伸至第二表面1002的電連線層108，所述電連線層108與所述焊墊104電連接；填充通孔105並覆蓋電連線層108的阻焊層120，阻焊層120中形成有開口，所述開口底部暴露出所述電連線層108；覆蓋所述開口內壁和開口底部並延伸至阻焊層上的導引焊墊107，所述導引焊墊107與所述電連線層108電連接；位於導引焊墊107上的焊接凸點122，所述焊接凸點122與所述導引焊墊107電連接。
在本發明中，不直接將焊接凸點設置於電連線層上，而是在兩者之間增設導引焊墊，避免在後續焊接凸點工藝以及其他測試中，對電連線層的熱衝擊，對電連線層起到保護的作用，防止電連線層產生虛接甚至斷裂的缺陷。此外，導引焊墊形成在阻焊層的開口內壁和開口底部及開口外的阻焊層表面上，僅開口底部的導引焊墊與電連線層連接，而焊接凸點透過導引焊墊與電連線層電連接，這樣，導引焊墊與焊接凸點匹配，在與焊接凸點的連接處，電連線層無需設置與焊接凸點匹配的端部，使得電連線層可以更密集的設置，大大提高器件的積體度，實現器件進一步的小型化。
在本發明實施例中，該影像傳感晶片封裝結構可以為形成在完成電連線層和焊接凸點加工而尚未進行切割的結構，也可以為經過切割之後的單個成品晶片的結構。
對於影像傳感晶片，該晶片至少形成有影像傳感區和焊墊，在本發明實施例中，在影像傳感晶片的第一表面上設置有影像傳感區102和位於影像傳感區102周圍的焊墊104，所述影像傳感區102用於接收外界光線並轉換為電信號，所述影像傳感區102內至少形成有影像傳感晶片單元，還可以進一步形成有與影像傳感晶片單元相連接的關聯電路，如用於驅動晶片的驅動單元(圖未示出)、獲取感光區電流的讀取單元(圖未示出)和處理感光區電流的處理單元(圖未示出)等。
當然，根據具體的設計需求，在該影像傳感晶片上還可以設置有其他 的部件，由於這些部件與本發明的發明點並不密切相關，在此不做進一步的詳細描述。
通常地，為了便於佈線，影像傳感區102位於單個晶片單元的中間位置，焊墊104呈矩形分佈，位於影像傳感區102的四周且位於單個晶片單元的邊緣位置，每一個側邊上可以形成有若干個焊墊104，焊墊104為影像傳感區內器件與外部電路的輸入輸出埠，可以將影像傳感區102的電信號傳出到外部電路，焊墊的材料為導電材料，可以為金屬材料，例如Al、Au和Cu等。
可以理解的是，根據不同的設計和需求，可以對影像傳感區和焊墊的位置以及焊墊的數量做出調整，例如，可以將焊墊僅設置在影像傳感區的一側或者某兩側。
優選而非必要地，所述影像感測器晶片的封裝結構還可包括與影像傳感區102對位元壓合的保護蓋板200，所述保護蓋板200對位壓合至所述影像感測器晶片100的第一表面1001，保護蓋板200為用於保護影像傳感區102的部件，其具有容置影像傳感區的空間，從而，在影像傳感區上形成保護罩，在保護影像傳感區不受破壞的同時，不影響光線進入影像傳感區。在本發明的實施例中，所述保護蓋板200為光學玻璃，光學玻璃上設置有支撐結構220，透過支撐結構220與影像傳感區102對位元壓合，使得支撐結構220之間圍成的空腔將影像傳感區102容納於其中，形成一個玻璃罩來保護影像傳感區102。可以理解的是，保護蓋板200也可以採用其他的結構，如採用不透光的基板來形成，而在基板與影像傳感區對應的區域設置開口或具有遮擋的透光開口。
然而，對於光學玻璃的保護蓋板，會存在鏡面反射的缺陷，減少進入到影像傳感區的光線，進而影響成像的品質，為此，參考圖3所示，在本發明實施例中，在光學玻璃的保護蓋板200的表面上設置有防反射層201，該防反射層201可以設置在光學玻璃朝向影像傳感區102的表面上或與該表面相對的表面上，也可以在光學玻璃的兩個表面上都設置該防反射層201，該防反射層至少與覆蓋影像傳感區102對應的區域，可以根據所選擇的光學玻璃來選擇合適的防反射塗層的材質。透過在光學玻璃的表面上設置防反射層，減少反射光，增加進入到影像傳感區的光線，進而提高成像的品質。
在本發明優選的實施例中，參考圖3所示，可以在第二表面1002上設置遮光層101，該遮光層覆蓋所述影像傳感區102，遮光層101避免光線特別是紅外光線透過晶片進入到影像傳感區102，所述遮光層101可以為金屬材料，金屬材料例如可以為鋁、鋁合金或者其他適宜的金屬材料，使得光線在其表面形成鏡面反射，避免光線進入影像傳感區，更優地，該金屬材料可以經過黑化處理的金屬Al，黑化處理的Al進一步具有好的吸光作用。
在本發明中，透過從第二表面上形成貫通至焊墊的通孔105，透過在通孔中形成與焊墊104電連接的電連線層108，電連接層108之上設置與電連接層電連接的導引焊墊107，並在導引焊墊107上形成與導引焊墊電連接的焊接凸點122，從而，將影像傳感區102的電信號引出至外部電路。
其中，通孔105貫穿影像傳感晶片100至焊墊104，使得通孔105暴露出焊墊104，通孔105可以貫穿至焊墊104的表面，也可以進一步貫穿至部分厚度的焊墊104中，所述通孔105可以為倒梯形或階梯形孔，即通孔的截面為倒梯形或者階梯形。
所述電連線層108覆蓋通孔105內壁，並延伸至通孔105兩側的第二表面1002之上，便於與焊接凸點122連接，電連線層的材料為導電材料，可以為金屬材料，例如Al、Au和Cu等。
在電連線層108之上設置有導引焊墊107，進而，在導引焊墊107上形成焊接凸點122，該導引焊墊107與電連線層108接觸，導引焊墊107可以具有與焊接凸點基本相似的形狀，如圓形等，以便於在其上進行焊接凸點工藝。導引焊墊107的面積可以與焊接凸點的下表面的面積基本相同或稍大於焊接凸點的下表面的面積。由於在焊接凸點的下方與電連線層之間形成有導引焊墊，而不直接將焊接凸點設置於電連線層上，避免在後續焊接凸點工藝以及其他測試中，對電連線層的熱衝擊，對電連線層起到保護的作用，防止電連線層產生虛接甚至斷裂的缺陷。
在本發明實施例中，如圖2所示，阻焊層120填充通孔並將電連線層108覆蓋，導引焊墊107形成在第二表面1002上阻焊層120的開口中，沿開口的內壁和開口底部設置並向開口兩側延伸，焊接凸點122形成在開口中並位於導引焊墊107之上。這樣，僅開口底部的導引焊墊107與電連線層108連接，而焊接凸點122透過導引焊墊107與電連線層108電連接，這樣，導引焊墊107 的圖形與焊接凸點122匹配，在與焊接凸點122的連接處，電連線層108可以無需設置與焊接凸點匹配的端部，使得電連線層可以更密集的設置，大大提高器件的積體度，實現器件進一步的小型化。
其中，所述導引焊墊107為導電材料，可以為金屬材料，例如Al、Au和Cu等。焊接凸點用於與外部電路的電連接，所述焊接凸點122可以為焊球、金屬柱等連接結構，材料可以為銅、鋁、金、錫或鉛等金屬材料。
在本發明實施例中，在電連線層108與影像傳感晶片100間設置有電絕緣層106，參考圖2所示，在通孔105的側壁以及通孔兩側的第二表面上形成有電絕緣層106，電絕緣層為介質材料，實現電隔離，例如可以為氧化矽、氮化矽或氮氧化矽或有機介質材料等，在優選的實施例中，該電絕緣層106為鈍化層，鈍化層為氧化物或氮化物的介質材料，如氧化矽、氮化矽或氮氧化矽或他們的疊層等，鈍化層作為電連線層的電絕緣層，具有較好的階梯覆蓋性，同時，鈍化層具有小的膨脹係數，使得電連線層由於熱膨脹受到的擠壓力大大減小，進一步降低影像傳感晶片電連線層的缺陷。
阻焊層在焊接凸點工藝中對其他層起到絕緣保護層的作用，阻焊層優選可以為防焊感光油墨，在起到絕緣保護的同時，可以起到緩衝層的作用，緩解焊接凸點工藝中，回流焊對鈍化層的衝擊力。
以上對本發明的影像傳感晶片封裝結構的實施例進行了詳細的描述，此外，本發明還提供了上述封裝結構的封裝方法，以下將結合具體的實施例，對該封裝方法進行詳細的描述。
首先，在步驟S101，提供晶圓1000，具有多顆陣列排列的影像傳感晶片100。在本發明實施例中，如圖4所示，在所述晶圓1000上形成有多個影像傳感晶片100，這些影像傳感晶片100呈陣列排列，在相鄰的影像傳感晶片100之間設置有切割道區域1100，用於後續工藝中對所述晶圓1000進行切割，從而形成獨立的影像傳感晶片封裝結構。參考圖5，所述晶圓1000具有相對的第一表面1001和第二表面1002，影像傳感晶片100具有影像傳感區102以及位於影像傳感區周圍的焊墊104，所述影像傳感區102以及焊墊104位於第一表面1001。圖4為晶圓1000的俯視結構示意圖，圖5及後續相關附圖為一個影像傳感晶片100單元沿AA1向的截面結構示意圖。
本實施例中，所述晶圓1000為半導體襯底，所述半導體襯底可以為體 襯底或包括半導體材料的疊層襯底，如Si襯底、Ge襯底、SiGe襯底或SOI等。
在本發明實施例中，所述影像傳感晶片具有影像傳感區102以及位於影像傳感區周圍的焊墊104，所述影像傳感區102以及焊墊104位於第一表面1002，所述影像傳感區102用於接收外界光線並轉換為電信號，所述影像傳感區102內至少形成有影像感測器單元，影像感測器單元例如可以由多個光電二極體陣列排列形成，還可以進一步形成有與影像感測器單元相連接的關聯電路，如用於驅動晶片的驅動單元(圖未示出)、獲取感光區電流的讀取單元(圖未示出)和處理感光區電流的處理單元(圖未示出)等。
優選而非必要地，所述封裝方法還可以包括步驟S102。在步驟S102中，提供保護蓋板200，並將保護蓋板200與所述晶圓1000對位壓合，參考圖6-7所示。
本實施例中，如圖6所示，所述保護蓋板200為光學玻璃，光學玻璃上設置有支撐結構220，所述保護蓋板200透過支撐結構220與影像傳感區102對位元壓合，使得支撐結構220之間圍成的空腔將影像傳感區102容納於其中，形成一個玻璃罩來保護影像傳感區102。所述光學玻璃可以為無機玻璃、有機玻璃或者其他具有特定強度的透光材料，光學玻璃的厚度可以為300μm~500μm。
所述支撐結構220通常為介質材料，例如可以為氧化矽、氮化矽、氮氧化矽或感光膠等。在一個具體的實施例中，支撐結構的材料為感光膠，首先，可以在光學玻璃的表面上旋塗感光膠，而後進行曝光顯影工藝，從而，在感光玻璃上形成支撐結構220。
由於該保護蓋板採用光學玻璃形成，會存在鏡面反射的缺陷，減少進入到影像傳感區的光線，進而影響成像的品質，為此，參考圖6所示，在形成支撐結構之前，可以先在光學玻璃的表面上設置防反射層201，該防反射層201可以設置在光學玻璃朝向影像傳感區102的表面上或與該表面相對的表面上，也可以在光學玻璃的兩個表面上都設置該防反射層201，可以透過噴塗的方式在玻璃基板上形成防反射層，該防反射層至少覆蓋影像傳感區102對應的區域，可以根據所選擇的玻璃基板來選擇合適的防反射塗層的材質。
在該實施例中，如圖7所示，將該保護蓋板200透過支撐結構220與晶圓1000的第一表面相結合，使得保護蓋板200與影像傳感區102對位元壓合。這裡，可以透過在支撐結構220和/或晶圓1000的第一表面之間設置黏合層(圖未示出)，來實現保護蓋板200與影像傳感區102的對位壓合，從而實現保護蓋板200與晶圓1000的對位壓合。例如，可以在支撐結構220的表面和/或晶圓1000的第一表面的相應位置處，透過噴塗、旋塗或者黏貼的工藝設置黏合層，再將二者進行壓合，透過所述黏合層實現相結合。所述黏合層既可以實現黏接作用，又可以起到絕緣和密封作用。所述黏合層可以為高分子黏接材料，例如矽膠、環氧樹脂、苯並環丁烯等聚合物材料。
而後，在步驟S103，從第二表面1002形成貫通至焊墊104的通孔105，參考圖9所示。
在進行該步驟之前，首先，從而第二表面1002對晶圓1000進行減薄，以便於後續通孔的蝕刻，可以採用機械化學研磨、化學機械研磨工藝或二者的結合進行減薄。
而後，更優地，為了避免或者減少光線特別是紅外光線從第二表面進入到影像傳感區102，如圖8所示，可以至少在第二表面對應影像傳感區102的設置遮光層101。所述遮光層101可以為金屬材料，例如可以為鋁、鋁合金或者其他適宜的金屬材料。在一個優選的實施例中，首先，可以透過濺射工藝在晶圓1000的第二表面上形成金屬層，如鋁金屬；接著，對該金屬層進行黑化處理，在所述鋁金屬層上形成黑色的硫化物膜層，提高所述鋁材料層的遮光效果。可以透過酸鹼藥水對所述金屬層進行黑化，例如，可以採用含硫的鹼溶液對所述鋁金屬層進行處理，黑化後的金屬層的厚度可以為1μm~10μm，優選地，可以為5μm，6μm等。而後，對金屬材料層進行圖形化，僅在第二表面上影像傳感區102對應的位置形成遮光層101，該遮光層也可以較影像傳感區102具有更大的面積，以完全遮蓋影像傳感區，起到更好的遮光效果。
而後，從第二表面1002形成貫通至焊墊104的通孔105，如圖9所示。具體地，可以利用蝕刻技術，如反應離子蝕刻或感應耦等離子體蝕刻等，對晶圓1000進行蝕刻，直至暴露出焊墊104，也可以進一步對焊墊104進行過蝕刻，即蝕刻掉部分厚度的焊墊，從而，形成暴露焊墊的通孔105。
優選而非必要地，還可以在通孔105側壁以及通孔105兩側的第二表面1002上形成鈍化層的電絕緣層106，如圖10所示。所述鈍化層106可以為氧化物或氮化物的介質材料，如氧化矽、氮化矽或氮氧化矽或他們的疊層等。具體地，首先，沉積鈍化材料層，如氧化矽，可以採用化學氣相沉積的方法進行沉積。接著，進行遮罩工藝，在遮罩的掩蔽下進行蝕刻，將焊墊104之上的鈍化材料層去除，從而，僅在通孔105側壁以及通孔105兩側的第二表面1002上形成鈍化層106。採用鈍化層形成的電絕緣層具有更好的覆蓋性，同時，可以採用蝕刻工藝選擇性去除焊墊上的鈍化層，從而，保證後續行程的電連線層與焊墊呈面接觸，保證二者之間更好的接觸和結合力。
接著，在步驟S104，在通孔105內壁及第二表面上形成電連線層108，參考圖11所示。
所述電連線層的材料為導電材料，可以為金屬材料薄膜，例如Al、Au和Cu等，可以透過RDL(重佈線層)技術來形成電連線層或其他合適的沉積工藝，例如可以採用RDL技術進行Cu的電鍍，並濺射Ti進行打底，形成電連線層108，RDL技術使得焊區位置重新佈局，可以更好地滿足焊區對焊接凸點最小間距的要求。
而後，在步驟S105，形成導引焊墊107以及焊接凸點122，參考圖15所示。
在本實施例中，具體地，首先，形成阻焊層120，以填充通孔105並在電連線層108上形成阻焊層120，如圖12所示。阻焊層120在焊接凸點工藝中對其他層起到絕緣保護層的作用，阻焊層例如可以為防焊感光油墨，可以透過旋塗工藝，來形成填充通孔105並覆蓋連線層108的阻焊層120，如圖12所示。接著，在阻焊層120中形成開口109，開口109底部暴露第二表面1002上的電連線層108，如圖13所示。透過曝光顯影，在電連線層108上的阻焊層120開口，開口底部暴露出電連線層108。
在本發明的實施例中，在對應焊接區的電連線層之上，可以並不形成與焊接區相對應的圖案或形成較焊接區更小的圖案，透過導引焊墊與電連線層接觸形成電連接，並進一步在導引焊墊上形成焊接區的圖案，這樣，使得電連線層可以更密集的設置，大大提高器件的積體度，實現器件進一步的小型化。
而後，在開口109內壁和開口底部及開口外的阻焊層120表面上形成導引焊墊107，如圖14所示。所述導引焊墊的材料為導電材料，可以為金屬材料薄膜，例如Al、Au和Cu等，可以透過RDL(重佈線層)技術或其他合適的沉積工藝來形成，如採用RDL技術進行Cu的電鍍，並濺射Ti進行打底，來形成導引焊墊107，再次利用RDL技術，可以使得焊接區位置重新佈局，進一步滿足焊區對焊接凸點最小間距的要求。
最後，在導引焊墊107上形成焊接凸點122，如圖15所示。可以先形成UBM(Under Bump Metal,球下金屬層)，而後進行植球工藝，透過遮罩版將焊料球放置於UBM上，而後採用回流焊工藝，在開孔中形成焊接凸點122，焊接凸點可以為焊球、金屬柱等連接結構，材料可以為銅、鋁、金、錫或鉛等金屬材料或他們的合金材料。
至此，形成了本發明實施例的封裝結構。更進一步地，可以繼續進行切割工藝，沿切割道區域將上述封裝結構切割為單個獨立的晶片，從而獲得獨立晶片的封裝結構。
雖然本發明揭露如上，但本發明並非限定於此。任何本領域技術人員，在不脫離本發明的精神和範圍內，均可作各種更動與修改，因此本發明的保護範圍應當以請求項所限定的範圍為准。
本申請要求於2015年10月28日提交中國專利局、申請號為201510712496.X、發明名稱為“影像傳感晶片封裝結構及封裝方法”，以及於2015年10月28日提交中國專利局、申請號為201520848168.8、實用新型名稱為“影像傳感晶片封裝結構”的中國專利申請的優先權，其全部內容於此透過引用結合在本申請中。
100‧‧‧影像傳感晶片
102‧‧‧影像傳感區
104‧‧‧焊墊
105‧‧‧通孔
106‧‧‧鈍化層
107‧‧‧導引焊墊
108‧‧‧電連線層
120‧‧‧阻焊層
122‧‧‧焊接凸點
200‧‧‧保護蓋板
210‧‧‧玻璃基板
220‧‧‧支撐結構
1001‧‧‧第一表面
1002‧‧‧第二表面

Claims (12)

  1. 一種影像傳感晶片封裝結構，其包括：影像傳感晶片，其具有相對的第一表面和第二表面，在第一表面上設置有影像傳感區以及位於影像傳感區周圍的焊墊；從第二表面貫通至焊墊的通孔；沿通孔內壁設置並延伸至第二表面的電連線層，所述電連線層與所述焊墊電連接；填充通孔並覆蓋電連線層的阻焊層，阻焊層中形成有開口，所述開口底部暴露出所述電連線層；覆蓋所述開口內壁和開口底部並延伸至阻焊層上的導引焊墊，所述導引焊墊與所述電連線層電連接；位於導引焊墊上的焊接凸點，所述焊接凸點與所述導引焊墊電連接；以及位於第二表面上且覆蓋所述影像傳感區的遮光層。
  2. 根據請求項1所述的封裝結構，其中所述導引焊墊的形狀為圓形。
  3. 根據請求項1所述的封裝結構，其中還包括位於電連線層之下通孔側壁以及第二表面上的鈍化層。
  4. 根據請求項3所述的封裝結構，其中所述阻焊層的材質為阻焊感光油墨。
  5. 根據請求項1所述的封裝結構，其還包括：與所述影像感測器晶片的影像傳感區對位元壓合的保護蓋板，所述保護蓋板對位壓合至所述影像傳感晶片的第一表面。
  6. 根據請求項5所述的封裝結構，其中所述保護蓋板為光學玻璃，光學玻璃的至少一個表面上設置有防反射層。
  7. 一種影像傳感晶片的封裝方法，其包括： 提供晶圓，具有多顆陣列排列的影像傳感晶片，其具有相對的第一表面和第二表面，在影像傳感晶片的第一表面上設置影像傳感區以及位於影像傳感區周圍的焊墊；在第二表面對應影像傳感區的位置形成遮光層；從第二表面形成貫通至焊墊的通孔；在通孔內壁及第二表面上形成電連線層，其中，所述電連線層與所述焊墊電連接；形成阻焊層，所述阻焊層填充通孔並覆蓋電連線層，阻焊層中形成有開口，所述開口底部暴露所述電連線層；在開口中形成導引焊墊，其中，所述導引焊墊覆蓋所述開口內壁和開口底部並延伸至阻焊層上，並且與所述電連線層電連接；以及在導引焊墊上形成焊接凸點以使得所述焊接凸點與所述導引焊墊電連接。
  8. 根據請求項7所述的封裝方法，其中形成阻焊層至形成焊接凸點的步驟包括：形成阻焊層，以填充通孔並覆蓋電連線層；在阻焊層中形成開口，開口暴露第二表面上的電連線層；在開口內壁及開口外的阻焊層上形成導引焊墊；以及在導引焊墊上形成焊接凸點。
  9. 根據請求項7所述的封裝方法，其中在形成通孔之後形成電連線層之前，還包括：在通孔側壁以及第二表面上形成鈍化層。
  10. 根據請求項9所述的封裝方法，其中形成所述鈍化層的步驟包括：沉積鈍化層；以及蝕刻去除通孔底部的鈍化層。
  11. 根據請求項7所述的封裝方法，其還包括： 提供保護蓋板，並將其與所述影像感測器晶片的影像傳感區對位元壓合，其中，所述保護蓋板對位壓合至所述影像傳感晶片的第一表面。
  12. 根據請求項11所述的封裝方法，其中所述保護蓋板為光學玻璃，光學玻璃的至少一個表面上設置有防反射層。
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