TWI611541B - Method of making wiring board having electrical isolator and moisture inhibiting cap incorporated therein and semiconductor assembly thereof - Google Patents

Method of making wiring board having electrical isolator and moisture inhibiting cap incorporated therein and semiconductor assembly thereof Download PDF

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Publication number
TWI611541B
TWI611541B TW105118313A TW105118313A TWI611541B TW I611541 B TWI611541 B TW I611541B TW 105118313 A TW105118313 A TW 105118313A TW 105118313 A TW105118313 A TW 105118313A TW I611541 B TWI611541 B TW I611541B
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Taiwan
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metal
adhesive
isolation member
electrical isolation
moisture
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TW105118313A
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Chinese (zh)
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TW201724433A (en
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文強 林
王家忠
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鈺橋半導體股份有限公司
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Priority claimed from US14/846,987 external-priority patent/US10420204B2/en
Priority claimed from US15/080,427 external-priority patent/US20160211207A1/en
Application filed by 鈺橋半導體股份有限公司 filed Critical 鈺橋半導體股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)

Abstract

一種線路板之製備方法，其特徵在於提供防潮蓋以覆蓋該電性隔離件/選擇性金屬凸柱與圍繞其之塑料間之介面。於一較佳實施例中，該電性隔離件以及該些金屬凸柱係藉由一黏著劑與該樹脂芯層連接，該黏著劑係於平滑經研磨之頂部及底部表面上，實質上與金屬凸柱、該樹脂芯層相反兩側上之金屬層、及包含有電性隔離件之導熱塊體共平面，從而可於平滑經研磨之底部表面處沉積一金屬橋於黏著劑上，以完全覆蓋該電性隔離件/金屬凸柱與周圍塑料間之介面。此外，亦可於平滑經研磨之頂部表面上沉積導線，以提供連接晶片之電性接點，並電性耦接至該些金屬凸柱。 A method of fabricating a circuit board, characterized in that a moisture-proof cover is provided to cover an interface between the electrical isolation member/selective metal stud and a plastic surrounding the same. In a preferred embodiment, the electrical isolation member and the metal studs are connected to the resin core layer by an adhesive, and the adhesive is applied to the smooth polished top and bottom surfaces, substantially a metal stud, a metal layer on opposite sides of the resin core layer, and a thermally conductive block including an electrical spacer are coplanar so that a metal bridge can be deposited on the adhesive at the smooth polished bottom surface to The interface between the electrical isolator/metal stud and the surrounding plastic is completely covered. In addition, a wire may be deposited on the smooth polished top surface to provide electrical contacts for connecting the wafer and electrically coupled to the metal studs.

Description

具有內建電性隔離件以及防潮蓋之線路板製備方法及其半導體組體 Circuit board preparation method with built-in electrical isolation member and moisture proof cover and semiconductor body thereof

本發明係有關於一種線路板之製備方法，尤指一種具有電性隔離件及防潮蓋之線路板製備方法及其半導體組體，其將電性隔離件整合於一樹脂芯層中，並將防潮蓋覆蓋於熱膨脹係數不匹配材料間之介面處。 The invention relates to a method for preparing a circuit board, in particular to a method for preparing a circuit board having an electrical isolation member and a moisture-proof cover, and a semiconductor assembly thereof, which integrates the electrical isolation member into a resin core layer, and The moisture barrier cover is over the interface between the thermal expansion coefficient mismatched materials.

電源模組或發光二極體(LED)等高電壓或高電流之應用通常需要配置高性能之線路板以提供信號互聯。然而，當功率增加時，由半導體晶片所產生的大量熱能將降低裝置的性能，並施加熱應力於該晶片上。如氧化鋁或氮化鋁等具導熱、電性絕緣、及低熱膨脹係數(CTE)特性之陶瓷材料通常被視為作為上述應用中合適的材料。如美國專利號第8,895,998號、以及第7,670,872號所揭露，為了提供較佳的可靠度，多種使用陶瓷作為晶片貼附墊之互聯結構被提出。此外，具有垂直方向信號路由的應用中，於樹脂板中需要如金屬凸柱之導電材料來傳遞電力。然而，當兩種具有不同熱膨脹係數之材料被嵌埋入樹脂板中，且陶瓷/樹脂、及金屬/ 樹脂之間的接觸表面積過小時，於熱循環下，其介面容易發生裂痕或產生剝離，由於大量濕氣可能會滲過裂損的介面而損害組裝之晶片，故使得此類型的線路板於實際使用上相當不可靠。 Applications such as power modules or high-voltage or high-current applications such as light-emitting diodes (LEDs) typically require high-performance boards to provide signal interconnection. However, as power increases, the large amount of thermal energy generated by the semiconductor wafer will degrade the performance of the device and apply thermal stress to the wafer. Ceramic materials such as alumina or aluminum nitride having thermal conductivity, electrical insulation, and low coefficient of thermal expansion (CTE) characteristics are generally considered to be suitable materials for the above applications. In order to provide better reliability, a variety of interconnect structures using ceramics as wafer attach pads have been proposed, as disclosed in U.S. Patent Nos. 8,895,998 and 7,670,872. In addition, in applications with vertical signal routing, a conductive material such as a metal stud is required in the resin sheet to transfer power. However, when two materials having different coefficients of thermal expansion are embedded in the resin sheet, and the ceramic/resin, and the metal/ When the contact surface area between the resins is too small, the interface is prone to cracking or peeling under thermal cycling. Since a large amount of moisture may permeate the cracked interface to damage the assembled wafer, this type of circuit board is practical. It is quite unreliable in use.

本發明之主要目的係在於提供一種具有至少一防潮蓋之線路板，該防潮蓋係覆蓋熱膨脹係數不匹配兩種材料間之介面，以避免由於熱膨脹係數(CTE)不匹配而導致介面之裂損處滲入濕氣，從而改善半導體組體之可靠度。 The main object of the present invention is to provide a circuit board having at least one moisture-proof cover covering an interface between two materials whose thermal expansion coefficient does not match, so as to avoid interface cracking due to mismatch of thermal expansion coefficient (CTE). Moisture is infiltrated to improve the reliability of the semiconductor package.

本發明之另一目的係在於提供一種具有低熱膨脹係數之電性隔離件之線路板，其中，該電性隔離件係嵌埋至一樹脂芯層中，以解決晶片/基板間熱膨脹係數不匹配的問題，從而改善該半導體組體的機械可靠度。 Another object of the present invention is to provide a circuit board having an electrical insulation member having a low thermal expansion coefficient, wherein the electrical isolation member is embedded in a resin core layer to solve the wafer/substrate thermal expansion coefficient mismatch. The problem, thereby improving the mechanical reliability of the semiconductor package.

本發明之又一目的係在於提供一種線路板，其中該電性隔離件上之路由電路係延伸至該樹脂芯層，從而使得具有細微間距之組體(如覆晶芯片)可被組裝至該電性隔離件上，並藉由該樹脂芯層上之電性接點連接至外在環境。 Another object of the present invention is to provide a circuit board in which a routing circuit on the electrical isolation member extends to the resin core layer, so that a group having a fine pitch (such as a flip chip) can be assembled to the circuit board. The electrical isolation member is connected to the external environment by an electrical contact on the resin core layer.

根據上述以及其他目的，本發明所提供之線路板具有一電性隔離件、一樹脂芯層、一防潮蓋、以及複數導線。該電性隔離件可對一半導體晶片提供CTE補償之接觸界面，且可對該晶片提供初級的熱傳導途徑，使得該晶片所產生的熱可被傳導出去。該樹脂芯層提供該電性隔離件、該防潮蓋、以及該些導線機械性的支撐，並作為該些導線與該防潮蓋之間的 間隔件。該防潮蓋係自該電性隔離件側向延伸至該樹脂芯層，並密封該電性隔離件與周圍塑料之間的介面，以作為濕氣屏障，避免濕氣經由介面上之裂損而滲入。設置於該電性隔離件頂側以及該樹脂芯層頂側上之該些導線係提供該線路板水平的信號傳遞以及電性路由。選擇性地，該線路板更可包括複數個金屬凸柱及複數個額外的防潮蓋。被該樹脂芯層側向圍繞之該些金屬凸柱係提供了該線路板垂直的信號或提供能量傳遞及返回之接地/電源。該些額外的防潮蓋係由該些金屬凸柱側向延伸至該樹脂芯層，並密封該些金屬凸柱與周圍塑料之間的介面。 According to the above and other objects, the circuit board provided by the present invention has an electrical isolation member, a resin core layer, a moisture barrier cover, and a plurality of wires. The electrical isolation member provides a CTE-compensated contact interface to a semiconductor wafer and provides a primary thermal conduction path to the wafer such that heat generated by the wafer can be conducted out. The resin core layer provides the electrical isolation member, the moisture-proof cover, and the mechanical support of the wires, and serves as a relationship between the wires and the moisture-proof cover Spacer. The moisture-proof cover extends laterally from the electrical spacer to the resin core layer, and seals the interface between the electrical separator and the surrounding plastic as a moisture barrier to prevent moisture from damaging through the interface. Infiltration. The wires disposed on the top side of the electrical isolation member and the top side of the resin core layer provide horizontal signal transmission and electrical routing of the circuit board. Optionally, the circuit board further includes a plurality of metal studs and a plurality of additional moisture-proof covers. The metal studs laterally surrounded by the resin core layer provide a vertical signal to the board or a ground/power source that provides energy transfer and return. The additional moisture barriers extend laterally from the metal studs to the resin core layer and seal the interface between the metal studs and the surrounding plastic.

於另一態樣中，本發明提供了一種線路板之製備方法，其步驟包含：提供一電性隔離件，其具有平坦之一頂側及一底側；提供一堆疊結構，包括一頂部金屬層、一底部金屬層、設置於該頂部金屬層與該底部金屬層之間之一貼合膜、以及一開口，其中，該開口係延伸穿過該頂部金屬層、該貼合膜、以及該底部金屬層，且該頂部金屬層以及該些底部金屬層各自具有一平坦之外表面；將該電性隔離件嵌入該堆疊結構之該開口中，並於該堆疊結構與該電性隔離件之間保留縫隙，接者擠壓並固化該貼合膜以形成一樹脂芯層，該樹脂芯層具有連接至該頂部金屬層之一頂側、以及連接至該底部金屬層之一底側，其中，該堆疊結構係藉由一黏著劑貼附至該電性隔離件之側壁，且該黏著劑係由該貼合膜擠出，並進入該堆疊結構與該電性隔離件間之該縫隙；移除被擠出之該黏著劑之一多餘部分，使得該黏著劑外露之一頂表面及一底表面實質上與該電性隔離件之該頂側及該底側、以及該頂部金屬層及底部金屬層之該些外表面共平面；形成複數導線，包括複數個接觸墊以及複數路由電路，其中，該些接觸墊係於該 電性隔離件之該頂側上側向延伸，以及該些路由電路係由該些接觸墊側向延伸於該樹脂芯層上；以及形成一防潮蓋，自該電性隔離件之該底側側向延伸至該底部金屬層，以完全覆蓋該黏著劑外露之該底表面。 In another aspect, the present invention provides a method of fabricating a circuit board, the method comprising: providing an electrical isolation member having a flat top side and a bottom side; providing a stacked structure including a top metal a layer, a bottom metal layer, a film disposed between the top metal layer and the bottom metal layer, and an opening, wherein the opening extends through the top metal layer, the bonding film, and the a bottom metal layer, and the top metal layer and the bottom metal layers each have a flat outer surface; the electrical isolation member is embedded in the opening of the stacked structure, and the stacked structure and the electrical isolation member The gap is retained, and the bonding film is extruded and cured to form a resin core layer having a top side connected to one of the top metal layers and a bottom side connected to the bottom metal layer, wherein The stacked structure is attached to the sidewall of the electrical isolation member by an adhesive, and the adhesive is extruded from the bonding film and enters the gap between the stacked structure and the electrical isolation member; Remove is squeezed out An excess portion of the adhesive such that a top surface and a bottom surface of the adhesive are substantially opposite to the top side and the bottom side of the electrical isolation member, and the top metal layer and the bottom metal layer The outer surfaces are coplanar; forming a plurality of wires, including a plurality of contact pads and a plurality of routing circuits, wherein the contact pads are The top side of the electrical isolation member extends laterally, and the routing circuits extend laterally from the contact pads to the resin core layer; and a moisture barrier cover is formed from the bottom side of the electrical isolation member The direction extends to the bottom metal layer to completely cover the bottom surface exposed by the adhesive.

於再一態樣中，本發明提供了一種線路板之製備方法，其步驟包含：提供一導熱塊體，其具有平坦之一頂側及一底側，其中，該導熱塊體包括有一電性隔離件；提供複數個金屬凸柱，其各自具有平坦之一頂側以及一底側；提供一堆疊結構，包括一頂部金屬層、一底部金屬層、設置於該頂部金屬層與該底部金屬層之間之一貼合膜、一第一開口、以及複數個第二開口，其中，該第一開口以及該些第二開口係延伸穿過該頂部金屬層、該貼合膜、以及該底部金屬層，且該頂部金屬層以及該些底部金屬層各自具有一平坦之外表面；將該導熱塊體嵌入該堆疊結構之該第一開口中，以及將該些金屬凸柱嵌入該堆疊結構之該些第二開口中，並於該堆疊結構與該導熱塊體之間、以及於該堆疊結構與該些金屬凸柱之間保留縫隙，接者擠壓並固化該貼合膜以形成一樹脂芯層，該樹脂芯層包括連接至該頂部金屬層之一頂側、以及連接至該底部金屬層之一底側，其中，該堆疊結構係藉由一黏著劑貼附至該導熱塊體及該些金屬凸柱之側壁，且該黏著劑係由該貼合膜擠出，並進入該堆疊結構與該導熱塊體間之該縫隙、及該堆疊結構與該些金屬凸柱間之該縫隙；移除被擠出之該黏著劑之一多餘部分，使得該黏著劑外露之一頂表面及一底表面實質上與該導熱塊體之該頂側及該底側、該頂部金屬層及底部金屬層之該些外表面、以及該些金屬凸柱之該頂側及該底側共平面；形成複數導線，包括複數個接觸墊以及複數路由電路，其中，該些接觸墊係於該電性隔離件之一頂側上側向延伸， 以及該些路由電路係由該些接觸墊側向延伸於該樹脂芯層上，並電性連接該些接觸墊以及該些金屬凸柱；以及形成複數個防潮蓋，自該電性隔離件之一底側側向延伸至該底部金屬層，並自該些金屬凸柱之該底側側向延伸至該底部金屬層，以完全覆蓋該黏著劑外露之該底表面。 In still another aspect, the present invention provides a method of fabricating a circuit board, the method comprising: providing a thermally conductive block having a flat top side and a bottom side, wherein the thermally conductive block includes an electrical property a spacer; providing a plurality of metal studs each having a flat top side and a bottom side; providing a stack structure comprising a top metal layer, a bottom metal layer, and the top metal layer and the bottom metal layer a bonding film, a first opening, and a plurality of second openings, wherein the first opening and the second openings extend through the top metal layer, the bonding film, and the bottom metal a layer, and the top metal layer and the bottom metal layers each have a flat outer surface; the thermally conductive block is embedded in the first opening of the stacked structure, and the metal studs are embedded in the stacked structure In the second openings, and between the stack structure and the heat conducting block, and between the stack structure and the metal studs, a gap is formed, and the bonding film is extruded and cured to form a resin core. The resin core layer includes a top side connected to one of the top metal layers and a bottom side connected to the bottom metal layer, wherein the stacked structure is attached to the heat conductive block by an adhesive and a sidewall of the metal stud, and the adhesive is extruded from the bonding film, and enters the gap between the stacked structure and the heat conducting block, and the gap between the stacked structure and the metal studs; Except for an excess of the adhesive being extruded, a top surface and a bottom surface of the adhesive are substantially opposite to the top side and the bottom side of the thermally conductive block, the top metal layer and the bottom metal The outer surfaces of the layers, and the top side and the bottom side of the metal studs are coplanar; forming a plurality of wires, including a plurality of contact pads and a plurality of routing circuits, wherein the contact pads are electrically isolated One of the pieces extends laterally on the top side, And the routing circuit extends laterally from the contact pads on the resin core layer, and electrically connects the contact pads and the metal studs; and forms a plurality of moisture-proof covers from the electrical isolation member A bottom side extends laterally to the bottom metal layer and laterally extends from the bottom side of the metal studs to the bottom metal layer to completely cover the bottom surface from which the adhesive is exposed.

於又一態樣中，本發明提供了另一種線路板之製備方法，其步驟包括：貼附一電性隔離件以及複數個金屬凸柱於一載膜上，其中，該電性隔離件係具有平坦之一頂側以及一底側，以及該些金屬凸柱各自具有平坦之一頂側以及一底側；形成一埋封塑料以覆蓋該電性隔離件、該些金屬凸柱、以及該載膜；移除一部分之該埋封塑料以形成一樹脂芯層，該樹脂芯層之一頂面實質上與該電性隔離件之該頂側以及該些金屬凸柱之該頂側共平面，並移除該載膜；形成複數導線，該些導線係包括複數個接觸墊以及複數路由電路，其中，該些接觸墊係於該電性隔離件之該頂側上側向延伸，且該些路由電路係由該些接觸墊側向延伸於該樹脂芯層上，並電性連接該些接觸墊以及該些金屬凸柱；以及形成複數個防潮蓋，該些防潮蓋係自該電性隔離件與該些金屬凸柱之該些底側，完全覆蓋該電性隔離件與該樹脂芯層之間之介面、以及該些金屬凸柱與該樹脂芯層之間之介面。 In another aspect, the present invention provides a method for fabricating another circuit board, the method comprising: attaching an electrical isolation member and a plurality of metal bumps on a carrier film, wherein the electrical isolation device is Having a flat top side and a bottom side, and the metal studs each having a flat top side and a bottom side; forming a buried plastic to cover the electrical spacer, the metal studs, and the Loading a portion of the embedding plastic to form a resin core layer, a top surface of the resin core layer being substantially coplanar with the top side of the electrical isolation member and the top side of the metal studs And removing the carrier film; forming a plurality of wires, the plurality of wires comprising a plurality of contact pads and a plurality of routing circuits, wherein the contact pads extend laterally on the top side of the electrical isolation member, and the The routing circuit extends laterally from the contact pads to the resin core layer, and electrically connects the contact pads and the metal studs; and forms a plurality of moisture-proof covers from which the moisture-proof covers are electrically isolated And the bottoms of the metal studs , Electrically isolated completely cover the interface between the resin member and the core layer and the interface between the resin of the core layer, and the plurality of metal studs.

除非特別描述、或步驟之間使用「接著」之用語、或必須依序發生之步驟，上述步驟之順序並無限制於以上所列，且可根據所需設計而變化或重新安排。 The order of the above steps is not limited to the above, and may be changed or rearranged according to the desired design, unless specifically stated, or the phrase "following" or the steps must be followed.

本發明之線路板之製備方法具有多項優點。舉例而言，沉積該些防潮蓋以密封電性隔離件與其周圍塑料間的介面及選擇性金屬凸柱與其周圍塑料間的介面，可建立防潮屏障，使得該些防潮蓋可避免濕氣經由 介面上的裂損處，由外界環境滲入該半導體組體之內部，從而可改善該組體的可靠度。將該電性隔離件接合至該樹脂芯層及選擇性的金屬凸柱可提供一平台，使高解析度電路可形成於該平台上，從而可使得具有細微間距之組體，如覆晶晶片以及表面黏著元件(surface mount component)可接置於該線路板上。 The method of preparing a wiring board of the present invention has a number of advantages. For example, depositing the moisture-proof covers to seal the interface between the electrical separator and the surrounding plastic and the interface between the selective metal stud and the surrounding plastic can establish a moisture barrier, so that the moisture-proof cover can prevent moisture from passing through The crack at the interface penetrates into the interior of the semiconductor body from the external environment, thereby improving the reliability of the group. Bonding the electrical spacer to the resin core layer and the selective metal studs provides a platform on which the high resolution circuit can be formed, thereby enabling groups having fine pitches, such as flip chip And a surface mount component can be attached to the circuit board.

本發明之上述及其他特徵與優點可藉由下述較佳實施例之詳細敘述更加清楚明瞭。 The above and other features and advantages of the present invention will become more apparent from the detailed description of the preferred embodiments.

100、200、300、400、500‧‧‧線路板 100, 200, 300, 400, 500‧‧‧ circuit boards

110‧‧‧半導體組體 110‧‧‧Semiconductor group

10‧‧‧導熱塊體 10‧‧‧thermal block

11‧‧‧電性隔離件 11‧‧‧Electrical insulation

111、201、401‧‧‧頂側 111, 201, 401‧‧‧ top side

112、202、402‧‧‧底側 112, 202, 402‧‧‧ bottom side

132‧‧‧頂部金屬膜 132‧‧‧Top metal film

137‧‧‧底部金屬膜 137‧‧‧Bottom metal film

20‧‧‧堆疊結構 20‧‧‧Stack structure

203‧‧‧第一開口 203‧‧‧ first opening

204‧‧‧第二開口 204‧‧‧second opening

206‧‧‧開口 206‧‧‧ openings

207‧‧‧縫隙 207‧‧‧ gap

21、22、24‧‧‧樹脂芯層 21, 22, 24‧‧‧ resin core layer

212、222‧‧‧頂部金屬層 212, 222‧‧‧ top metal layer

214、224‧‧‧貼合膜 214, 224‧‧ ‧ laminated film

215‧‧‧黏著劑 215‧‧‧Adhesive

217、227‧‧‧底部金屬層 217, 227‧‧‧ bottom metal layer

221‧‧‧第一層壓板 221‧‧‧First laminate

223‧‧‧第一介電層 223‧‧‧First dielectric layer

226‧‧‧第二層壓板 226‧‧‧Second laminate

228‧‧‧第二介電層 228‧‧‧Second dielectric layer

244‧‧‧埋封塑料 244‧‧‧Blocked plastic

31‧‧‧載膜 31‧‧‧ Carrier film

40‧‧‧金屬凸柱 40‧‧‧Metal studs

51‧‧‧底部披覆層 51‧‧‧ bottom coating

52‧‧‧防潮蓋 52‧‧‧ moisture proof cover

54‧‧‧頂部披覆層 54‧‧‧Top cladding

56‧‧‧導線 56‧‧‧Wire

561‧‧‧接觸墊 561‧‧‧Contact pads

563‧‧‧路由電路 563‧‧‧ Routing Circuit

61‧‧‧半導體裝置 61‧‧‧ semiconductor devices

71‧‧‧焊料凸塊 71‧‧‧ solder bumps

81‧‧‧蓋體 81‧‧‧ cover

T1‧‧‧第一厚度 T1‧‧‧first thickness

T2‧‧‧第二厚度 T2‧‧‧second thickness

T3‧‧‧第三厚度 T3‧‧‧ third thickness

T4‧‧‧第四厚度 T4‧‧‧fourth thickness

T5‧‧‧第五厚度 T5‧‧‧ fifth thickness

T6‧‧‧第六厚度 T6‧‧‧ sixth thickness

參考隨附圖式，本發明可藉由下述較佳實施例之詳細敘述更加清楚明瞭，其中：圖1係根據本發明之第一實施態樣中，一導熱塊體之剖面圖；圖2係根據本發明之第一實施態樣中，一堆疊結構於一載膜上之剖面圖；圖3係根據本發明之第一實施態樣中，將圖1中之導熱塊體以及金屬凸柱貼附至圖2中之載膜上之剖面圖；圖4係根據本發明之第一實施態樣中，將圖3中之堆疊結構經層壓製程後之剖面圖；圖5係根據本發明之第一實施態樣中，將圖4所示結構中多餘的黏著劑移除之剖面圖；圖6係根據本發明之第一實施態樣中，將圖5所示結構中之載膜移除之剖面圖；圖7、圖8、及圖9分別係根據本發明之第一實施態樣中，形成防潮蓋以及導 線於圖6所述之結構中，以完成一線路板之製備之剖面圖、底視立體圖、以及上視立體圖；圖10係根據本發明之第一實施態樣中，將一晶片電性連接至圖9所示之線路板上之一半導體組體之剖面圖；圖11係根據本發明之第二實施態樣中，一堆疊結構於一載膜上之剖面圖；圖12係根據本發明之第二實施態樣中，將圖1中之導熱塊體以及金屬凸柱貼附至圖11中之載膜之剖面圖；圖13係根據本發明之第二實施態樣中，將圖12所示之堆疊結構經層壓製程後之剖面圖；圖14係根據本發明之第二實施態樣中，將圖13所示結構中多餘黏著劑以及載膜移除之剖面圖；圖15係根據本發明之第二實施態樣中，形成防潮蓋以及導線至圖14所示之結構，以完成一線路板之製備之剖面圖；圖16係根據本發明之第三實施態樣中，將電性隔離件、金屬凸柱及堆疊結構貼附至載膜上之剖面圖；圖17係根據本發明之第三實施態樣中，對圖16中之堆疊結構進行層壓製程後之剖面圖；圖18係根據本發明之第三實施態樣中，將圖17所示結構中多餘黏著劑移除之剖面圖；圖19係根據本發明之第三實施態樣中，將圖18所示結構中載膜移除之剖面圖；圖20係根據本發明之第三實施態樣中，形成防潮蓋以及導線至圖19所示之 結構，以完成一線路板之剖面圖；圖21係根據本發明之第四實施態樣中，將堆疊結構置於載膜上之剖面圖；圖22係根據本發明之第四實施態樣中，對電性隔離件貼附至圖21之載膜上之剖面圖；圖23係根據本發明之第四實施態樣中，對圖22中之堆疊結構進行層壓製程後之剖面圖；圖24係根據本發明之第四實施態樣中，將圖23所示結構中多餘黏著劑及載膜移除之剖面圖；圖25係根據本發明之第四實施態樣中，形成防潮蓋以及導線至圖24所示之結構，以完成一線路板之剖面圖；圖26係根據本發明之第五實施態樣中，將電性隔離件以及金屬凸柱貼附至載膜上之剖面圖；圖27係根據本發明之第五實施態樣中，提供埋封塑料至圖26所示結構上之剖面圖；圖28係根據本發明之第五實施態樣中，將圖27所示結構中埋封塑料之上部份以及載膜移除之剖面圖；以及圖29係根據本發明之第五實施態樣中，形成防潮蓋以及導線至圖28所示之結構，以完成一線路板之剖面圖。 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a thermally conductive block according to a first embodiment of the present invention; FIG. 2 is a more detailed view of the preferred embodiment of the present invention; According to a first embodiment of the present invention, a stacked structure is a cross-sectional view on a carrier film; and FIG. 3 is a heat conductive block and a metal stud in FIG. 1 according to a first embodiment of the present invention. FIG. 4 is a cross-sectional view of the stacked structure of FIG. 3 after a layering process according to the first embodiment of the present invention; FIG. 5 is a cross-sectional view of the stacked structure of FIG. In the first embodiment, a cross-sectional view of the excess adhesive in the structure shown in FIG. 4 is removed; FIG. 6 is a view of the first embodiment of the present invention, in which the carrier film in the structure shown in FIG. In addition to the cross-sectional views, FIG. 7, FIG. 8, and FIG. 9 respectively form a moisture-proof cover and a guide according to the first embodiment of the present invention. In the structure shown in FIG. 6, a cross-sectional view, a bottom perspective view, and a top perspective view of the preparation of a circuit board are completed; FIG. 10 is a schematic diagram of electrically connecting a wafer according to the first embodiment of the present invention. Figure 11 is a cross-sectional view of a semiconductor package on the circuit board shown in Figure 9; Figure 11 is a cross-sectional view of a stacked structure on a carrier film in accordance with a second embodiment of the present invention; In a second embodiment, a heat-dissipating block and a metal stud in FIG. 1 are attached to a cross-sectional view of the carrier film in FIG. 11; FIG. 13 is a second embodiment of the present invention. FIG. 14 is a cross-sectional view showing the excess adhesive and the carrier film removed from the structure shown in FIG. 13 according to the second embodiment of the present invention; FIG. 15 is a cross-sectional view of the stacked structure shown in FIG. According to a second embodiment of the present invention, a moisture-proof cover and a wire are formed to the structure shown in FIG. 14 to complete a cross-sectional view of the preparation of a circuit board; and FIG. 16 is a third embodiment of the present invention. A cross-sectional view of an electrical separator, a metal stud, and a stacked structure attached to a carrier film; 17 is a cross-sectional view of the stacked structure of FIG. 16 after a lamination process according to a third embodiment of the present invention; and FIG. 18 is a third embodiment of the present invention, wherein the structure shown in FIG. FIG. 19 is a cross-sectional view showing a carrier film removed from the structure shown in FIG. 18 according to a third embodiment of the present invention; FIG. 20 is a third embodiment of the present invention. Medium, forming a moisture-proof cover and wires to the one shown in FIG. Structure for completing a cross-sectional view of a wiring board; FIG. 21 is a cross-sectional view showing a stacked structure on a carrier film according to a fourth embodiment of the present invention; and FIG. 22 is a fourth embodiment of the present invention. FIG. 23 is a cross-sectional view of the stacked structure of FIG. 22 after the layering process according to the fourth embodiment of the present invention; FIG. 23 is a cross-sectional view of the stacked structure of FIG. Figure 24 is a cross-sectional view showing the removal of excess adhesive and carrier film in the structure of Figure 23 in accordance with a fourth embodiment of the present invention; and Figure 25 is a moisture-proof cover formed in accordance with a fourth embodiment of the present invention. The wire is connected to the structure shown in FIG. 24 to complete a cross-sectional view of a circuit board; and FIG. 26 is a cross-sectional view showing the electrical spacer and the metal stud attached to the carrier film according to the fifth embodiment of the present invention. Figure 27 is a cross-sectional view showing the structure of the embedding plastic to the structure shown in Figure 26 in the fifth embodiment of the present invention; and Figure 28 is a view showing the structure shown in Figure 27 in the fifth embodiment of the present invention. a cross-sectional view of the upper portion of the buried plastic and the removal of the carrier film; and FIG. 29 is based on the present invention The fifth aspect of the embodiment, and is formed of a moisture resistant lid structure shown in FIGS. 28 to lead to complete cross-sectional view of a circuit board.

在下文中，將提供實施例以詳細說明本發明之實施態樣。本發明之優點以及功效將藉由本發明下述內容而更為顯著。在此說明所附之 圖式係簡化過且做為例示用。圖式中所示之元件數量、形狀及尺寸可依據實際情況而進行修改，且元件的配置可能更為複雜。本發明中也可進行其他方面之實踐或應用，且不偏離本發明所定義之精神及範疇之條件下，可進行各種變化以及調整。 In the following, examples will be provided to explain in detail embodiments of the invention. The advantages and effects of the present invention will be more apparent by the following aspects of the invention. Attached here The schema is simplified and used as an illustration. The number, shape and size of the components shown in the drawings can be modified as the case may be, and the configuration of the components may be more complicated. Other variations and modifications can be made without departing from the spirit and scope of the invention as defined in the invention.

[實施例1] [Example 1]

圖1-9係根據本發明之第一實施態樣中，一種線路板之製備方法示意圖，該線路板係包括一電性隔離件、複數個金屬凸柱、一樹脂芯層、複數個防潮蓋、以及複數導線。 1-9 is a schematic view showing a method for preparing a circuit board according to a first embodiment of the present invention, the circuit board includes an electrical isolation member, a plurality of metal protrusions, a resin core layer, and a plurality of moisture-proof covers. And multiple wires.

圖1係一導熱塊體10之剖面圖，該導熱塊體10具有一頂部金屬膜132以及一底部金屬膜137，其係分別沉積至一電性隔離件11之一頂側111以及一底側112。該電性隔離件11通常具有高彈性模數以及低熱膨脹係數(例如為2 x 10-6K-1至10 x 10-6K-1)，可例如為陶瓷、矽、玻璃、或其他具導熱特性之電絕緣材料。在此實施例中，該電性隔離件11為厚度0.4mm之陶瓷板。該頂部金屬膜132及該底部金屬膜137各自具有一平坦的外表面，且通常為銅層，並各自具有35微米之厚度。 1 is a cross-sectional view of a thermally conductive block 10 having a top metal film 132 and a bottom metal film 137 deposited on a top side 111 and a bottom side of an electrical isolation member 11, respectively. 112. The electrical isolator 11 generally has a high modulus of elasticity and a low coefficient of thermal expansion (for example, 2 x 10 -6 K -1 to 10 x 10 -6 K -1 ), which may be, for example, ceramic, tantalum, glass, or the like. Electrically insulating material with thermal conductivity. In this embodiment, the electrical spacer 11 is a ceramic plate having a thickness of 0.4 mm. The top metal film 132 and the bottom metal film 137 each have a flat outer surface, and are typically copper layers, and each have a thickness of 35 microns.

圖2係一堆疊結構20於一載膜31上之剖面圖，該堆疊結構20具有第一及第二開口203、204。該堆疊結構20包括一頂部金屬層212、一貼合膜214、以及一底部金屬層217。該第一及第二開口203、204係藉由沖壓貫穿該頂部金屬層212、該貼合膜214、以及該底部金屬層217而形成。此外，該第一及第二開口203、204亦可藉由其他技術形成，如雷射切割或雷射切割與濕式蝕刻之組合。該載膜31通常為一膠帶，且該底部金屬層217係藉由該載膜31之黏著性質而貼附至該載膜31上。於此堆疊結構20中，該貼合膜 214係設置於該頂部金屬層212與該底部金屬層217之間。該頂部金屬層212及該底部金屬層217通常係由銅所構成，且各自具有分別面朝向上方向及向下方向之兩相反平坦表面。該貼合膜214可由多種有機或無機之電絕緣材料所形成之各種介電層或預浸料(prepregs)所構成。舉例而言，該貼合膜214最初可為含浸一加強材之樹脂形態之熱固化環氧樹脂預浸料，且部分被固化至中間態。該環氧樹脂可為FR-4，但其他例如多功能樹脂以及雙馬來醯亞胺三嗪(bismaleimide triazine,BT)亦適用於此。在特定的應用中，亦適用氰酸酯(cyanate esters)、聚醯亞胺(polyimide)、以及聚四氟乙烯(PTFE)。該加強材可為E-玻璃，但其他如S-玻璃、D-玻璃、石英、芳倫(kevlar aramid)、以及紙皆可適用。該加強材亦可為紡織布、不織布、或不規則超細纖維。可加入如二氧化矽(粉狀熔融石英)之填充劑至該預浸料中以改善其導熱度、耐熱度、以及熱膨脹匹配度。商用之預浸料亦適用於此，例如由W.L.Gore & Associates of Eau Claire,Wisconsin生產之SPEEDBOARD prepreg。在此實施例中，該貼合膜214係B階未固化環氧樹脂之預浸材非固化片，而該頂部金屬層212以及該底部金屬層217係分別為厚度0.025mm以及0.2mm之銅層。 2 is a cross-sectional view of a stacked structure 20 on a carrier film 31 having first and second openings 203, 204. The stack structure 20 includes a top metal layer 212, a bonding film 214, and a bottom metal layer 217. The first and second openings 203, 204 are formed by punching through the top metal layer 212, the bonding film 214, and the bottom metal layer 217. In addition, the first and second openings 203, 204 may also be formed by other techniques, such as laser cutting or a combination of laser cutting and wet etching. The carrier film 31 is usually a tape, and the bottom metal layer 217 is attached to the carrier film 31 by the adhesive property of the carrier film 31. In the stack structure 20, the bonding film A 214 is disposed between the top metal layer 212 and the bottom metal layer 217. The top metal layer 212 and the bottom metal layer 217 are typically made of copper and each have two opposite flat surfaces that face upward and downward. The bonding film 214 can be composed of various dielectric layers or prepregs formed of a variety of organic or inorganic electrically insulating materials. For example, the bonding film 214 may initially be a heat-cured epoxy prepreg in a resin form impregnated with a reinforcing material, and partially cured to an intermediate state. The epoxy resin may be FR-4, but other, for example, multifunctional resins and bismaleimide triazine (BT) are also suitable for use herein. Cyanate esters, polyimides, and polytetrafluoroethylene (PTFE) are also suitable for specific applications. The reinforcing material may be E-glass, but others such as S-glass, D-glass, quartz, kevlar aramid, and paper are applicable. The reinforcing material may also be a woven fabric, a non-woven fabric, or an irregular microfiber. A filler such as cerium oxide (powdered fused silica) may be added to the prepreg to improve its thermal conductivity, heat resistance, and thermal expansion matching. Commercial prepregs are also suitable for use herein, for example, SPEED BOARD prepreg manufactured by W. L. Gore & Associates of Eau Claire, Wisconsin. In this embodiment, the bonding film 214 is a prepreg non-cured sheet of a B-stage uncured epoxy resin, and the top metal layer 212 and the bottom metal layer 217 are respectively copper having a thickness of 0.025 mm and 0.2 mm. Floor.

圖3係將圖1所示之導熱塊體10以及複數個金屬凸柱40貼附至該載膜31上之結構剖面圖。該導熱塊體10係被嵌入該堆疊結構20之該第一開口203，而該些金屬凸柱40係被嵌入該堆疊結構20之該些第二開口204中。該些金屬凸柱40各自具有平坦的相反頂側401及底側402，且可由任一導電材料所構成。在此實施例中，該些金屬凸柱40為銅柱，且各自具有實質上與該導熱塊體10相同之厚度。該導熱塊體10及該些金屬凸柱40係貼附 至該載膜31上，其中該底部金屬膜137之外表面以及該些金屬凸柱40之該些底側402係面朝該載膜31，且導熱塊體10及金屬凸柱40不與該堆疊結構20接觸。因此，於該第一及第二開口203、204中，該導熱塊體10與該堆疊結構20之間，以及該些金屬凸柱40與該堆疊結構20之間具有縫隙207。該些縫隙207係側向圍繞該導熱塊體10以及該些金屬凸柱40，且被該堆疊結構20側向圍繞。在此圖式中，該導熱塊體10以及該些金屬凸柱40係藉由該載膜31之黏著特性而貼附至該載膜31上，此外，該導熱塊體10以及該些金屬凸柱40亦可藉由塗佈額外黏著劑而貼附至該載膜31上。 3 is a cross-sectional view showing the structure in which the thermally conductive block 10 and the plurality of metal studs 40 shown in FIG. 1 are attached to the carrier film 31. The heat conducting block 10 is embedded in the first opening 203 of the stack structure 20, and the metal studs 40 are embedded in the second openings 204 of the stack structure 20. The metal studs 40 each have a flat opposite top side 401 and a bottom side 402 and may be constructed of any electrically conductive material. In this embodiment, the metal studs 40 are copper posts and each have substantially the same thickness as the thermally conductive block 10 . The heat conducting block body 10 and the metal studs 40 are attached On the carrier film 31, the outer surface of the bottom metal film 137 and the bottom sides 402 of the metal studs 40 face the carrier film 31, and the heat conductive block 10 and the metal stud 40 do not The stack structure 20 is in contact. Therefore, in the first and second openings 203, 204, a gap 207 is formed between the heat conducting block 10 and the stacked structure 20, and between the metal studs 40 and the stacked structure 20. The slits 207 surround the thermally conductive block 10 and the metal studs 40 laterally and are laterally surrounded by the stacked structure 20 . In this figure, the heat conducting block 10 and the metal studs 40 are attached to the carrier film 31 by the adhesive properties of the carrier film 31. Further, the heat conducting block 10 and the metal bumps The post 40 can also be attached to the carrier film 31 by applying an additional adhesive.

圖4係一黏著劑215自該貼合膜214被擠出進入該些縫隙207之結構剖面圖。藉由施加熱及壓力，該貼合膜214被擠出，且該貼合膜214中部分之黏著劑係流入該些縫隙中207。該貼合膜214係藉由施加向下的壓力至該頂部金屬層212上以及/或施加向上的壓力至該載膜31上而被擠壓，從而使得該頂部金屬層212以及該底部金屬層217朝向彼此移動，並於施加壓力至該貼合膜上214時同時施加熱於該貼合膜214。於熱及壓力下，該貼合膜214可任意成形。因此，介於該頂部金屬膜212與該底部金屬膜217之間之該貼合膜214被擠壓而改變其原本的形狀，並流入該些縫隙207中。該頂部金屬層212及該底部金屬層217繼續朝彼此移動，且該貼合膜214依舊介於該頂部金屬層212與該底部金屬層217之間，且填充該頂部金屬層212與該底部金屬層217間變小之空間。同時，自該貼合膜214擠出之該黏著劑215填充該些縫隙207。於此圖式中，自該貼合膜214擠出之該黏著劑215亦上升至稍高於該第一及第二開口203、204，且溢流至該導熱塊體10、該些金屬凸柱40、以及該頂部金屬層212之上表面，此種現象係由於該貼合膜214之厚度稍厚 於其所需之厚度。因此，自該貼合膜214擠出之該黏著劑215於該導熱塊體10、該些金屬凸柱40、以及該頂部金屬層212之上表面形成一薄塗層。當該頂部金屬層212與該頂部金屬膜132以及該些金屬凸柱40於頂面處呈共平面時，將停止上述的動作，然繼續施加熱於該貼合膜214以及被擠出之黏著劑215，從而使得B階熔融之未固化環氧樹脂轉變成C階固化或硬化之環氧樹脂。 4 is a cross-sectional view showing the structure in which an adhesive 215 is extruded from the bonding film 214 into the slits 207. The bonding film 214 is extruded by applying heat and pressure, and a portion of the adhesive in the bonding film 214 flows into the slits 207. The bonding film 214 is extruded by applying a downward pressure to the top metal layer 212 and/or applying an upward pressure onto the carrier film 31 such that the top metal layer 212 and the bottom metal layer The 217 moves toward each other and simultaneously applies heat to the bonding film 214 when pressure is applied to the bonding film 214. The bonding film 214 can be arbitrarily formed under heat and pressure. Therefore, the bonding film 214 interposed between the top metal film 212 and the bottom metal film 217 is pressed to change its original shape and flow into the slits 207. The top metal layer 212 and the bottom metal layer 217 continue to move toward each other, and the bonding film 214 is still interposed between the top metal layer 212 and the bottom metal layer 217, and fills the top metal layer 212 and the bottom metal The space between layers 217 becomes smaller. At the same time, the adhesive 215 extruded from the bonding film 214 fills the slits 207. In the figure, the adhesive 215 extruded from the bonding film 214 also rises slightly above the first and second openings 203, 204, and overflows to the thermally conductive block 10, the metal protrusions. The pillar 40 and the upper surface of the top metal layer 212 are such that the thickness of the bonding film 214 is slightly thicker. The thickness required for it. Therefore, the adhesive 215 extruded from the bonding film 214 forms a thin coating on the upper surface of the thermal conductive block 10, the metal studs 40, and the top metal layer 212. When the top metal layer 212 and the top metal film 132 and the metal studs 40 are coplanar at the top surface, the above action will be stopped, and the application of heat to the bonding film 214 and the adhesive bonding will continue. Agent 215, thereby converting the B-stage molten uncured epoxy resin into a C-stage cured or hardened epoxy resin.

在此階段，該堆疊結構20係藉由自該貼合膜214擠出之黏著劑215而連接至該導熱塊體10及該些金屬凸柱40之側壁上。經固化後之該貼合膜214係提供該頂部金屬層212與該底部金屬層217之間穩固的機械性連結。據此，該導熱塊體10以及該些金屬凸柱40係藉由介於該導熱塊體10與該樹脂芯層21之間以及介於該些金屬凸柱40與該樹脂芯層21之間之黏著劑215而與該樹脂芯層21結合。該樹脂芯層21具有連接於該頂部金屬層212之一頂側201，以及連接於該底部金屬層217之一底側202。 At this stage, the stack structure 20 is attached to the thermally conductive block 10 and the sidewalls of the metal studs 40 by an adhesive 215 extruded from the bonding film 214. The cured film 214 provides a secure mechanical bond between the top metal layer 212 and the bottom metal layer 217. Accordingly, the heat conducting block 10 and the metal studs 40 are interposed between the heat conducting block 10 and the resin core layer 21 and between the metal studs 40 and the resin core layer 21. The adhesive 215 is bonded to the resin core layer 21. The resin core layer 21 has a top side 201 connected to the top metal layer 212 and a bottom side 202 connected to the bottom metal layer 217.

圖5係將溢流至該導熱塊體10、該些金屬凸柱40、以及該頂部金屬層212上之多餘黏著劑移除之結構剖面圖。該多餘黏著劑可藉由拋光/研磨的方法移除。於拋光/研磨之後，該導熱塊體10、該些金屬凸柱40、該頂部金屬層212、以及自該貼合膜214擠出之該黏著劑215係實質上於一經拋光/研磨的平滑上表面上共平面。 FIG. 5 is a cross-sectional view showing the structure of the excess adhesive removed from the thermally conductive block 10, the metal studs 40, and the top metal layer 212. The excess adhesive can be removed by polishing/grinding. After polishing/polishing, the thermally conductive block 10, the metal studs 40, the top metal layer 212, and the adhesive 215 extruded from the bonding film 214 are substantially polished/polished. Coplanar on the surface.

圖6係將該載膜31移除後之結構剖面圖。該載膜31係自該導熱塊體10、該些金屬凸柱40、該底部金屬層217、以及被擠出之該黏著劑215分離，以由下方顯露該導熱塊體10、該些金屬凸柱40、以及該底部金屬層217。據此，該黏著劑215具有顯露的頂表面及底表面，且實質上分別於向 上方向以及向下方向與該些金屬凸柱40之平坦頂側401及底側402、該導熱塊體10之平坦頂側101及底側102、以及該頂部及底部金屬層212、217之平坦外表面共平面。 Fig. 6 is a cross-sectional view showing the structure of the carrier film 31. The carrier film 31 is separated from the heat conducting block body 10, the metal studs 40, the bottom metal layer 217, and the extruded adhesive 215 to expose the heat conducting block 10 and the metal bumps from below. Column 40, and the bottom metal layer 217. Accordingly, the adhesive 215 has a exposed top surface and a bottom surface, and is substantially respectively The upper direction and the downward direction and the flat top side 401 and the bottom side 402 of the metal studs 40, the flat top side 101 and the bottom side 102 of the heat conducting block 10, and the top and bottom metal layers 212, 217 are flat The outer surface is coplanar.

圖7、圖8、及圖9係分別為形成防潮蓋52及導線56之結構剖面圖、底視立體圖、以及上視立體圖。該結構之底表面可經金屬化以形成一底部披覆層51(通常為銅層)，其可藉由如電鍍、無電電鍍、蒸鍍、濺鍍、或其組合之多種方法以形成單層或多層結構。舉例而言，該結構可先浸漬於一活化劑溶液中，使得該結構之底表面對於無電電鍍銅具有催化特性，接著無電電鍍一薄銅膜以作為第二銅膜電鍍於其上之晶種層，該第二銅膜隨後係於該晶種層上被電鍍至一所需厚度。或者，於該晶種層上電鍍銅層之前，該晶種層可藉由濺鍍如鈦/銅之薄膜於該結構之底表面。於沉積底部披覆層51之後，執行一金屬圖案化程序以形成複數個彼此間隔的防潮蓋52。該些防潮蓋52其中之一者係包含該底部金屬膜137、該底部金屬層217、以及該底部披覆層51，且包括一選定部分，該選定部分係自該電性隔離件11下方之該底部金屬膜137側向延伸至該樹脂芯層21下方之該底部金屬層217；其他防潮蓋52係包含該底部金屬層217以及該底部披覆層51，且各自包括一選定部分，該選定部分係自該些金屬凸柱40之該底側402側向延伸至該樹脂芯層21下方之該底側金屬層217。具體而言，該些防潮蓋52於接觸擠出之該黏著劑215之處具有一第一厚度T1(約0.5至50微米)，於接觸該電性隔離件11之處具有一第二厚度T2，於接觸該樹脂芯層21之處具有一第三厚度T3，以及具有一面朝向下方向之一平坦表面。於此圖式中，該第二厚度T2以及該第三厚度T3大於該第一厚度T1，且該第三厚度T3係大於該第二厚度 T2。為了便於圖示，該底部金屬膜137、該些金屬凸柱40、該底部金屬層217、以及該底部披覆層51係繪示成單一層。由於銅為同質披覆，該些金屬層間之界線(如虛線所示)可能不易或無法被察覺。然而，該底部披覆層51與被擠出之該黏著劑215間之界線則清楚可見。 7, 8, and 9 are a cross-sectional view, a bottom perspective view, and a top perspective view, respectively, of the moisture-proof cover 52 and the wire 56. The bottom surface of the structure may be metallized to form a bottom cladding layer 51 (typically a copper layer) which may be formed into a single layer by various methods such as electroplating, electroless plating, evaporation, sputtering, or combinations thereof. Or multilayer structure. For example, the structure may be first immersed in an activator solution such that the bottom surface of the structure has catalytic properties for electroless copper plating, followed by electroless plating of a thin copper film as a seed crystal on which the second copper film is plated. The layer, the second copper film is subsequently plated onto the seed layer to a desired thickness. Alternatively, the seed layer may be sputtered onto the bottom surface of the structure by sputtering a film such as titanium/copper prior to plating the copper layer on the seed layer. After depositing the bottom cladding layer 51, a metal patterning process is performed to form a plurality of moisture barrier covers 52 that are spaced apart from one another. One of the moisture-proof covers 52 includes the bottom metal film 137, the bottom metal layer 217, and the bottom cladding layer 51, and includes a selected portion from the lower portion of the electrical isolation member 11. The bottom metal film 137 extends laterally to the bottom metal layer 217 below the resin core layer 21; the other moisture barrier cover 52 includes the bottom metal layer 217 and the bottom cladding layer 51, and each includes a selected portion, the selection A portion extends laterally from the bottom side 402 of the metal studs 40 to the bottom side metal layer 217 below the resin core layer 21. Specifically, the moisture-proof covers 52 have a first thickness T1 (about 0.5 to 50 micrometers) in contact with the extruded adhesive 215, and have a second thickness T2 at the place where the electrical isolation member 11 is contacted. There is a third thickness T3 at the place where the resin core layer 21 is contacted, and a flat surface having one side facing downward. In this figure, the second thickness T2 and the third thickness T3 are greater than the first thickness T1, and the third thickness T3 is greater than the second thickness. T2. For convenience of illustration, the bottom metal film 137, the metal studs 40, the bottom metal layer 217, and the bottom cladding layer 51 are illustrated as a single layer. Since copper is a homogeneous coating, the boundaries between the metal layers (as indicated by the dashed lines) may be difficult or impossible to detect. However, the boundary between the bottom cladding layer 51 and the adhesive 215 that is extruded is clearly visible.

另外，該結構之上表面可藉由相同之活化劑溶液、無電電鍍銅晶種層、以及電鍍銅層而被金屬化，藉以形成一頂部披覆層54，當達到所需厚度時，則執行一圖案化程序以形成包括接觸墊561以及路由電路563之該些導線56。該些接觸墊561包含該頂部披覆層54以及該頂部金屬膜132，並於該電性隔離件11之頂側111上側向延伸，而該些路由電路563係包含該頂部披覆層54、該頂部金屬層132、以及該頂部金屬層212，並於該電性隔離件11之該頂側111上、該樹脂芯層21之該頂側201上、該些金屬凸柱40之該頂側401上、以及該黏著劑215之頂表面上側向延伸，以接觸並電性連接該些接觸墊561以及該些金屬凸柱40。另外，該些路由電路563自上方完全覆蓋介於該些金屬凸柱40與樹脂芯層21間之黏著劑215、以及介於該些金屬凸柱40與該黏著劑215間之介面。該些接觸墊561具有該頂部金屬膜132與該頂部披覆層54合併之厚度，且可作為貼覆之晶片之電性連接點。該路由電路563於接觸被擠出之該黏著劑215之處具有該頂部披覆層54之厚度(約0.5至50微米)；於接觸該電性隔離件11之處具有該頂部金屬膜132與其上之該頂部披覆層54合併之厚度；以及於接觸該樹脂芯層21之處具有該頂部金屬層212與其上之該頂部披覆層54合併之厚度。該路由電路563係由該些接觸墊561側向延伸至該樹脂芯層21上，並提供該些接觸墊561與該些金屬凸柱40之間之電性連接。金屬圖案化之技術手段係包括濕式蝕刻、電化學蝕 刻、雷射輔助蝕刻、以及其組合，與其上之蝕刻光罩(圖未示)合併使用，以定義出該些防潮蓋52以及該些導線56。 In addition, the upper surface of the structure can be metallized by the same activator solution, electroless copper plating, and electroplated copper layer to form a top cladding layer 54 which, when the desired thickness is achieved, is performed. A patterning process is performed to form the wires 56 including contact pads 561 and routing circuitry 563. The contact pads 561 include the top cladding layer 54 and the top metal film 132, and extend laterally on the top side 111 of the electrical isolation member 11, and the routing circuits 563 include the top cladding layer 54, The top metal layer 132 and the top metal layer 212 are on the top side 111 of the electrical isolation member 11 , the top side 201 of the resin core layer 21, and the top side of the metal studs 40 The top surface of the adhesive layer 215 and the top surface of the adhesive 215 are laterally extended to contact and electrically connect the contact pads 561 and the metal studs 40. In addition, the routing circuits 563 completely cover the adhesive 215 between the metal studs 40 and the resin core layer 21 and the interface between the metal studs 40 and the adhesive 215 from above. The contact pads 561 have a thickness of the top metal film 132 combined with the top cladding layer 54 and serve as an electrical connection point for the attached wafer. The routing circuit 563 has a thickness of the top cladding layer 54 (about 0.5 to 50 micrometers) where it contacts the extruded adhesive 215; and has the top metal film 132 and its contact with the electrical spacer 11 The thickness of the top cladding layer 54 is combined; and the thickness of the top metal layer 212 combined with the top cladding layer 54 thereon is contacted where the resin core layer 21 is contacted. The routing circuit 563 extends laterally from the contact pads 561 to the resin core layer 21 and provides electrical connection between the contact pads 561 and the metal studs 40. The technical means of metal patterning include wet etching and electrochemical etching. Engraving, laser assisted etching, and combinations thereof, are used in conjunction with an etch mask (not shown) to define the moisture barriers 52 and the wires 56.

據此，如圖7、圖8、及圖9所示，所完成之線路板100包括一電性隔離件11、複數個金屬凸柱40、一樹脂芯層21、被擠出之一黏著劑215、複數個防潮蓋52、以及複數導線56。該樹脂芯層21覆蓋且圍繞該電性隔離件11以及該些金屬凸柱40之側壁，並藉由電性隔離件11與樹脂芯層21之間以及金屬凸柱40與樹脂芯層21之間被擠出之該黏著劑215，而機械性地連接至該電性隔離件11以及該些金屬凸柱40之側壁上。該些防潮蓋52由下方完全覆蓋介於該電性隔離件11與該樹脂芯層21之間、及介於該些金屬凸柱40與該樹脂芯層21之間之黏著劑215，且完全覆蓋介於該電性隔離件11與該黏著劑215之間、以及介於該些金屬凸柱40與該黏著劑215之間之介面，並更側向延伸於樹脂芯層21之該底側202上。該些導線56係自上方於該電性隔離件11、該樹脂芯層21、該些金屬凸柱40、以及該黏著劑215上側向延伸，以提供水平的路由，且更電性耦接至提供垂直路由之該些金屬凸柱40。另外，該些導線56亦自上方完全覆蓋介於該樹脂芯層21與該些金屬凸柱40間之黏著劑215，以及完全覆蓋介於該些金屬凸柱40與該黏著劑215之介面。 Accordingly, as shown in FIG. 7, FIG. 8, and FIG. 9, the completed circuit board 100 includes an electrical isolation member 11, a plurality of metal studs 40, a resin core layer 21, and an adhesive that is extruded. 215, a plurality of moisture-proof covers 52, and a plurality of wires 56. The resin core layer 21 covers and surrounds the electrical isolation member 11 and the sidewalls of the metal pillars 40, and between the electrical isolation member 11 and the resin core layer 21 and between the metal bump 40 and the resin core layer 21 The adhesive 215 is extruded between the electrical spacers 11 and the sidewalls of the metal studs 40. The moisture-proof covers 52 completely cover the adhesive 215 between the electrical isolation member 11 and the resin core layer 21 and between the metal posts 40 and the resin core layer 21, and completely Covering the interface between the electrical isolation member 11 and the adhesive 215, and between the metal studs 40 and the adhesive 215, and extending laterally further to the bottom side of the resin core layer 21 202. The wires 56 extend laterally from above to the electrical isolation member 11, the resin core layer 21, the metal posts 40, and the adhesive 215 to provide a horizontal route and are more electrically coupled to The metal studs 40 are provided for vertical routing. In addition, the wires 56 completely cover the adhesive 215 between the resin core layer 21 and the metal studs 40 from above, and completely cover the interface between the metal studs 40 and the adhesive 215.

圖10係將一半導體裝置61電性連接至圖7所示之線路板100之一半導體組體110剖面圖。繪示為晶片之該半導體裝置61係藉由焊料凸塊71而以覆晶方式接置於該線路板100之該些接觸墊561上。此外，更將一蓋體81設置於該線路板100上，並由上方封裝其中之半導體裝置61。據此，即使該電性隔離件11與該黏著劑215之間、以及該些金屬凸柱40與該黏著劑215之間因熱膨脹不匹配導致了裂痕，該線路板100之該些防潮蓋52可防止 濕氣由外部環境進入該半導體組體110之內部。此外，該電性隔離件11可對該半導體裝置61提供熱膨脹係數緩衝之接觸介面，且該半導體裝置61所產生的熱可傳導至該電性隔離件11，並進一步向外散逸至該電性隔離件11底下之防潮蓋52。 FIG. 10 is a cross-sectional view showing a semiconductor device 61 electrically connected to a semiconductor package 110 of the wiring board 100 shown in FIG. The semiconductor device 61, which is shown as a wafer, is flip-chip bonded to the contact pads 561 of the circuit board 100 by solder bumps 71. In addition, a cover 81 is disposed on the circuit board 100 and the semiconductor device 61 is encapsulated therein. Accordingly, even if the thermal isolation between the electrical isolation member 11 and the adhesive 215 and the metal studs 40 and the adhesive 215 are not matched due to thermal expansion, the moisture-proof covers 52 of the circuit board 100. Preventable Moisture enters the interior of the semiconductor body 110 from the external environment. In addition, the electrical isolation member 11 can provide a contact interface of the thermal expansion coefficient buffer to the semiconductor device 61, and the heat generated by the semiconductor device 61 can be conducted to the electrical isolation member 11 and further dissipated outward to the electrical property. A moisture-proof cover 52 under the spacer 11.

[實施例2] [Embodiment 2]

圖11至15係根據本發明第二實施態樣中，線路板之另一製備方法示意圖，該製法係提供另一種堆疊結構以形成一樹脂芯層。 11 to 15 are views showing another method of preparing a wiring board according to a second embodiment of the present invention, which provides another stacked structure to form a resin core layer.

為了簡要說明之目的，上述實施例1中任何可作相同應用之敘述皆併於此，且無須再重複相同敘述。 For the purpose of brief description, any description of the same application in the above-described embodiment 1 is hereby made, and the same description is not repeated.

圖11係一堆疊結構20於一載膜31上之結構剖面圖。該堆疊結構20包括一第一層壓板221、一貼合膜224、以及一第二層壓板226。該堆疊結構20具有延伸穿過該第一層壓板221、該貼合膜224、以及該第二層壓板226之第一及第二開口203、204。在此圖式中，該第一層壓板221包括一頂部金屬層222，其係設置於一第一介電層223上；以及該第二層壓板226包括一底部金屬層227，其係設置於該第二介電層228上。該第一以及第二介電層223、228通常係由環氧樹脂、玻璃環氧樹脂、聚醯亞胺、或其類似物所構成，並具有50微米之厚度。該頂部及底部金屬層222、227通常係由銅所構成，並具有35微米之厚度。於該堆疊結構20中，該貼合膜224係被設置於該第一層壓板221與該第二層壓板226之間。該第一層壓板221之該頂部金屬層222、以及該第二層壓板226之該底部金屬層227係分別面朝向上方向以及向下方向。藉由該載膜31之黏著性質，該堆疊結構20係藉由與該載膜31接觸之該第二層壓板226之該底部金屬層227而貼附於該載膜31上。 Figure 11 is a cross-sectional view showing the structure of a stacked structure 20 on a carrier film 31. The stack structure 20 includes a first laminate 221, a laminate film 224, and a second laminate 226. The stack structure 20 has first and second openings 203, 204 extending through the first laminate 221, the laminate film 224, and the second laminate 226. In this figure, the first laminate 221 includes a top metal layer 222 disposed on a first dielectric layer 223; and the second laminate 226 includes a bottom metal layer 227 disposed on The second dielectric layer 228 is on. The first and second dielectric layers 223, 228 are typically comprised of epoxy, glass epoxy, polyimide, or the like, and have a thickness of 50 microns. The top and bottom metal layers 222, 227 are typically comprised of copper and have a thickness of 35 microns. In the stack structure 20, the bonding film 224 is disposed between the first laminate 221 and the second laminate 226. The top metal layer 222 of the first laminate 221 and the bottom metal layer 227 of the second laminate 226 face upward and downward, respectively. The stacked structure 20 is attached to the carrier film 31 by the bottom metal layer 227 of the second laminate 226 in contact with the carrier film 31 by the adhesive property of the carrier film 31.

圖12係將圖1所示之導熱塊體10以及複數個金屬凸柱40貼附至該載膜31上之結構剖面圖。該導熱塊體10係被嵌入至該堆疊結構20之該第一開口203中；而該些金屬凸柱40係被嵌入該第二開口204中。該導熱塊體10以及該些金屬凸柱40係以該底部金屬層137之外表面以及該些金屬凸柱40之該底側402面朝該載膜31的方式貼附於該載膜31上。 Fig. 12 is a cross-sectional view showing the structure in which the thermally conductive block 10 and the plurality of metal studs 40 shown in Fig. 1 are attached to the carrier film 31. The heat conducting block 10 is embedded in the first opening 203 of the stack structure 20; and the metal studs 40 are embedded in the second opening 204. The heat conducting block body 10 and the metal studs 40 are attached to the carrier film 31 such that the outer surface of the bottom metal layer 137 and the bottom side 402 of the metal studs 40 face the carrier film 31. .

圖13係自該貼合膜224擠出一黏著劑225之結構剖面圖，其中該黏著劑225係填入介於該導熱塊體10與該堆疊結構20之間、以及介於該些金屬凸柱40與該堆疊結構20之間之該縫隙207中。藉由施加熱及壓力，以擠壓該貼合膜224，並使該貼合膜224中部分之黏著劑225流入該縫隙207中。於被擠出之黏著劑225填充該縫隙207之後，則固化該貼合膜224以及被擠出之該黏著劑225。據此，該導熱塊體10以及該些金屬凸柱40係藉由被擠出至縫隙207中之該黏著劑225而連接至一樹脂芯層22。在此圖式中，該樹脂芯層22包括該第一介電層223、該經固化之貼合膜224、以及該第二介電層228，且該樹脂芯層22具有接合至該頂部金屬層222之一頂側201、以及接合至該底部金屬層227之一底側202。經固化之該貼合膜224係與該第一層壓板221之該第一介電層223、以及該第二層壓板226之該第二介電層228一體化，且提供該第一層壓板221與該第二層壓板226之間穩固的機械性連結。於該縫隙207中被擠出之黏著劑225係提供該導熱塊體10與該樹脂芯層22之間、以及該些金屬凸柱40與該樹脂芯層22之間穩固的機械性連結。自該貼合膜224被擠出之黏著劑225亦稍高於該第一及第二開口203、204，且溢流至該導熱塊體10、該頂部金屬層222、以及該些金屬凸柱40之上表面上。 13 is a cross-sectional view showing a structure in which an adhesive 225 is extruded from the bonding film 224, wherein the adhesive 225 is filled between the thermally conductive block 10 and the stacked structure 20, and between the metal protrusions. The gap between the post 40 and the stack 20 is in the gap 207. The bonding film 224 is pressed by applying heat and pressure, and a part of the adhesive 225 in the bonding film 224 is caused to flow into the slit 207. After the gap 207 is filled with the extruded adhesive 225, the adhesive film 224 and the adhesive 225 that is extruded are cured. Accordingly, the thermally conductive block 10 and the metal studs 40 are connected to a resin core layer 22 by the adhesive 225 extruded into the slits 207. In this figure, the resin core layer 22 includes the first dielectric layer 223, the cured bonding film 224, and the second dielectric layer 228, and the resin core layer 22 has a bonding to the top metal. One of the top sides 201 of the layer 222, and one of the bottom sides 202 of the bottom metal layer 227. The cured film 224 is integrated with the first dielectric layer 223 of the first laminate 221 and the second dielectric layer 228 of the second laminate 226, and the first laminate is provided A solid mechanical bond between the 221 and the second laminate 226. The adhesive 225 extruded in the slit 207 provides a stable mechanical connection between the thermally conductive block 10 and the resin core layer 22 and between the metal studs 40 and the resin core layer 22. The adhesive 225 extruded from the bonding film 224 is also slightly higher than the first and second openings 203, 204, and overflows to the heat conducting block 10, the top metal layer 222, and the metal studs 40 on the surface.

圖14係移除多餘黏著劑以及該載膜31後之結構剖面圖。於該 頂部金屬膜132、該頂部金屬層222、以及該些金屬凸柱40上，多餘之黏著劑係藉由拋光/研磨的方法移除，以形成經拋光/研磨之一平坦上表面。該載膜31係自該底部金屬膜137、該底部金屬層227、該些金屬凸柱40、以及被擠出之該黏著劑225上剝離，以由下方顯露該底部金屬膜137、該底部金屬層227、以及該些金屬凸柱40。據此，該黏著劑225具有顯露的頂表面及底表面，其實質上分別於向上方向以及向下方向與該頂部及底部金屬膜132、137之外表面、該些金屬凸柱40之該頂側401及底側402、以及該頂部及底部金屬層222、227之外表面共平面。 Figure 14 is a cross-sectional view showing the structure after removing the excess adhesive and the carrier film 31. In this On the top metal film 132, the top metal layer 222, and the metal studs 40, excess adhesive is removed by polishing/grinding to form a flat upper surface that is polished/polished. The carrier film 31 is peeled off from the bottom metal film 137, the bottom metal layer 227, the metal studs 40, and the extruded adhesive 225 to expose the bottom metal film 137 and the bottom metal from below. Layer 227, and the metal studs 40. Accordingly, the adhesive 225 has exposed top and bottom surfaces substantially in the upward and downward directions and the outer surfaces of the top and bottom metal films 132, 137, the top of the metal studs 40, respectively. The sides 401 and the bottom side 402, and the outer surfaces of the top and bottom metal layers 222, 227 are coplanar.

圖15係形成防潮蓋52以及導線56之結構剖面圖。該防潮蓋52係藉由沉積一底部披覆層51後接著進行金屬圖案化而形成，其中該底部披覆層51係由下方與該底部金屬膜137以及該底部金屬層227結合。據此，該防潮蓋52包括該底部金屬層膜137、該底部金屬層227、以及該底部披覆層51，並由下方接觸且覆蓋該電性隔離件11、該樹脂芯層22、該些金屬凸柱40、以及被擠出之該黏著劑225。該些防潮蓋52其中之一者係包括一選定部分，其係自該電性隔離件11下方之該底部金屬膜137側向延伸至該樹脂芯層22下方之該底部金屬層227，而其他防潮蓋52係各自具有一選定部分，其係自該些金屬凸柱40之該底側402側向延伸至該樹脂芯層22下方之該底部金屬層227。此外，此結構之上表面係經金屬化以形成一頂部披覆層54，接著進行圖案化程序以形成該些導線56。該些導線56係由上方側向延伸於該電性隔離件11之該頂側111、該樹脂芯層22至該頂側201、該些金屬凸柱40之該頂側401、以及該黏著劑225之上表面上，並與之接觸。 Figure 15 is a cross-sectional view showing the structure of the moisture-proof cover 52 and the wires 56. The moisture-proof cover 52 is formed by depositing a bottom cladding layer 51 followed by metal patterning, wherein the bottom cladding layer 51 is bonded to the bottom metal film 137 and the bottom metal layer 227 from below. Accordingly, the moisture-proof cover 52 includes the bottom metal layer film 137, the bottom metal layer 227, and the bottom cladding layer 51, and is contacted by the lower surface and covers the electrical isolation member 11, the resin core layer 22, and the The metal stud 40 and the adhesive 225 are extruded. One of the moisture-proof covers 52 includes a selected portion extending laterally from the bottom metal film 137 under the electrical isolation member 11 to the bottom metal layer 227 below the resin core layer 22, and the other The moisture barrier caps 52 each have a selected portion that extends laterally from the bottom side 402 of the metal studs 40 to the bottom metal layer 227 below the resin core layer 22. In addition, the top surface of the structure is metallized to form a top cladding layer 54, followed by a patterning process to form the wires 56. The wires 56 extend from the upper side to the top side 111 of the electrical isolation member 11 , the resin core layer 22 to the top side 201 , the top side 401 of the metal studs 40 , and the adhesive On and above the surface of 225.

因此，如圖15所示，所完成之線路板200包括一電性隔離件 11、複數個金屬凸柱40、一樹脂芯層22、被擠出之一黏著劑225、複數個防潮蓋52、以及複數導線56。該樹脂芯層22係藉由被擠出之該黏著劑225，機械性地與該電性隔離件11、以及該些金屬凸柱40連接。該些防潮蓋52係由下方完全覆蓋該黏著劑225，以及完全覆蓋介於該電性隔離件11與該黏著劑225、以及介於該些金屬凸柱40與該黏著劑225之間之介面，並側向延伸至該樹脂芯層22下方。該些導線56係包括複數個接觸墊561以及複數個路由電路563，該些接觸墊561係位於該電性隔離件11之該頂側111上，且該些路由電路563係由上方電性連接至該些接觸墊561以及該些金屬凸柱40。 Therefore, as shown in FIG. 15, the completed circuit board 200 includes an electrical isolation member. 11. A plurality of metal studs 40, a resin core layer 22, an adhesive 225 extruded, a plurality of moisture barrier covers 52, and a plurality of wires 56. The resin core layer 22 is mechanically coupled to the electrical isolator 11 and the metal studs 40 by the adhesive 225 being extruded. The moisture-proof covers 52 completely cover the adhesive 225 from below, and completely cover the interface between the electrical isolation member 11 and the adhesive 225, and between the metal posts 40 and the adhesive 225. And extending laterally below the resin core layer 22. The wires 56 include a plurality of contact pads 561 and a plurality of routing circuits 563. The contact pads 561 are located on the top side 111 of the electrical isolation member 11, and the routing circuits 563 are electrically connected from above. To the contact pads 561 and the metal studs 40.

[實施例3] [Example 3]

圖16至20係根據本發明第三實施態樣中，線路板之另一製備方法示意圖，該製法係將不具金屬膜之電性隔離件***堆疊結構之開口中。 16 to 20 are schematic views showing another method of fabricating a wiring board according to a third embodiment of the present invention, which inserts an electrical spacer having no metal film into an opening of a stacked structure.

為了簡要說明之目的，上述實施例中任何可作相同應用之敘述皆併於此，且無須再重複相同敘述。 For the purpose of brevity, the description of any of the above embodiments that can be used for the same application is the same, and the same description is not repeated.

圖16係導熱塊體10、堆疊結構20及金屬凸柱40於載膜31上之結構剖面圖。該堆疊結構20包括一頂部金屬層212、一底部金屬層217及一貼合膜214，該貼合膜214係位於頂部金屬層212與底部金屬層217之間。該導熱塊體10係***堆疊結構20之第一開口203中，而該些金屬凸柱40則***堆疊結構20之第二開口204中。於本具體實施例中，該導熱塊體10並未於電性隔離件11上形成金屬膜，且其係以電性隔離件11接觸載膜31的方式而貼附至載膜31上。 16 is a cross-sectional view showing the structure of the heat conductive bulk body 10, the stacked structure 20, and the metal stud 40 on the carrier film 31. The stack structure 20 includes a top metal layer 212 , a bottom metal layer 217 , and a bonding film 214 . The bonding film 214 is between the top metal layer 212 and the bottom metal layer 217 . The thermally conductive block 10 is inserted into the first opening 203 of the stacked structure 20, and the metal posts 40 are inserted into the second opening 204 of the stacked structure 20. In the embodiment, the heat conductive block 10 does not form a metal film on the electrical isolation member 11 , and is attached to the carrier film 31 in such a manner that the electrical isolation member 11 contacts the carrier film 31 .

圖17係自該貼合膜214擠出一黏著劑215之結構剖面圖，其中該黏著劑215係填入介於該導熱塊體10與該堆疊結構20之間、以及介於該些 金屬凸柱40與該堆疊結構20之間之該些縫隙207中。於被擠出之黏著劑215填充該些縫隙207之後，則固化該貼合膜214以及被擠出之該黏著劑215。據此，該導熱塊體10以及該些金屬凸柱40係藉由導熱塊體10與樹脂芯層21之間及金屬凸柱40與樹脂芯層21之間的黏著劑215而與樹脂芯層21合併。於此圖中，自該貼合膜214被擠出之黏著劑215亦稍高於第一及第二開口203、204，且溢流至該導熱塊體10、該頂部金屬層212、以及該些金屬凸柱40之上表面上。 17 is a cross-sectional view showing a structure in which an adhesive 215 is extruded from the bonding film 214, wherein the adhesive 215 is filled between the thermally conductive block 10 and the stacked structure 20, and between The gaps 207 between the metal studs 40 and the stack structure 20. After the gaps 207 are filled with the extruded adhesive 215, the adhesive film 214 and the adhesive 215 that is extruded are cured. Accordingly, the thermally conductive block 10 and the metal studs 40 are bonded to the resin core layer by the adhesive 215 between the thermally conductive block 10 and the resin core layer 21 and between the metal stud 40 and the resin core layer 21. 21 mergers. In the figure, the adhesive 215 extruded from the bonding film 214 is also slightly higher than the first and second openings 203, 204, and overflows to the thermal block 10, the top metal layer 212, and the The metal studs 40 are on the upper surface.

圖18係移除多餘黏著劑後之結構剖面圖。將該電性隔離件11、該頂部金屬層212、以及該些金屬凸柱40上多餘之黏著劑移除。據此，該黏著劑215具有顯露的頂表面，其於向上方向與該電性隔離件11之頂側111、頂部金屬層212之外表面及金屬凸柱40之頂側401呈實質上共平面。 Figure 18 is a cross-sectional view showing the structure after removing excess adhesive. The electrical spacers 11, the top metal layer 212, and the excess adhesive on the metal studs 40 are removed. Accordingly, the adhesive 215 has a exposed top surface that is substantially coplanar with the top side 111 of the electrical spacer 11, the outer surface of the top metal layer 212, and the top side 401 of the metal stud 40 in an upward direction. .

圖19係移除載膜31後之結構剖面圖。將載膜31由導熱塊體10、金屬凸柱40、底部金屬層217及被擠出的黏著劑215剝離。據此，該黏著劑215具有顯露的底表面，其於向下方向與該電性隔離件11之底側112、金屬凸柱40之底側402及底部金屬層217之外表面呈實質上共平面。 Figure 19 is a cross-sectional view showing the structure after the carrier film 31 is removed. The carrier film 31 is peeled off from the thermally conductive block 10, the metal studs 40, the bottom metal layer 217, and the extruded adhesive 215. Accordingly, the adhesive 215 has a exposed bottom surface that is substantially coextensive with the outer surface of the bottom side 112 of the electrical spacer 11 , the bottom side 402 of the metal stud 40, and the bottom metal layer 217 in a downward direction. flat.

圖20係形成防潮蓋52以及導線56之結構剖面圖。通常是藉由濺鍍，接著再進行電解電鍍至所需厚度，以沉積形成一底部披覆層51。一旦達到所需厚度後，即可藉由金屬圖案化製程，以形成防潮蓋52。據此，該些防潮蓋52包括該底部金屬層217及該底部披覆層51，並由下方接觸且覆蓋該電性隔離件11、該樹脂芯層21、該些金屬凸柱40、以及被擠出之該黏著劑215。該些防潮蓋52其中之一者係包括一選定部分，其係自該電性隔離件11之底側112側向延伸至樹脂芯層21下方之底部金屬層217，而其他防潮 蓋52係各自具有一選定部分，其係自該些金屬凸柱40之該底側402側向延伸至樹脂芯層21下方之底部金屬層217。於此圖中，該些防潮蓋52於接觸擠出之該黏著劑215之處具有一第一厚度T1(約0.5至50微米)；於接觸該電性隔離件11之處具有一第二厚度T2，其實質上相等於第一厚度T1；於接觸該樹脂芯層21之處具有一第三厚度T3，其大於第一厚度T1及第二厚度T2。 Figure 20 is a cross-sectional view showing the structure of the moisture-proof cover 52 and the wires 56. The bottom cladding layer 51 is usually deposited by sputtering, followed by electrolytic plating to a desired thickness. Once the desired thickness is reached, the metal patterning process can be used to form the moisture barrier cover 52. Accordingly, the moisture-proof covers 52 include the bottom metal layer 217 and the bottom cladding layer 51, and are in contact with and cover the electrical isolation member 11, the resin core layer 21, the metal protrusions 40, and the The adhesive 215 is extruded. One of the moisture-proof covers 52 includes a selected portion extending laterally from the bottom side 112 of the electrical isolation member 11 to the bottom metal layer 217 below the resin core layer 21, while other moisture-proof portions The lids 52 each have a selected portion that extends laterally from the bottom side 402 of the metal studs 40 to the bottom metal layer 217 below the resin core layer 21. In the figure, the moisture-proof covers 52 have a first thickness T1 (about 0.5 to 50 micrometers) at the point of contact with the extruded adhesive 215; and a second thickness at the place where the electrical isolation member 11 is contacted. T2, which is substantially equal to the first thickness T1; and has a third thickness T3 at the point of contacting the resin core layer 21, which is greater than the first thickness T1 and the second thickness T2.

此外，通常是藉由濺鍍，接著再進行電解電鍍至所需厚度，以沉積形成一頂部披覆層54。一旦達到所需厚度後，即可藉由金屬圖案化製程，以形成導線56。該些導線56係接觸電性隔離件11、樹脂芯層21、金屬凸柱40及黏著劑215，並由上方側向延伸於電性隔離件11、樹脂芯層21、金屬凸柱40及黏著劑215上。於此圖中，該些導線56於接觸擠出之該黏著劑215之處具有第四厚度T4(約0.5至50微米)；於接觸該電性隔離件11之處具有第五厚度T5，其實質上相等於第四厚度T4；於接觸該樹脂芯層21之處具有第六厚度T6，其大於第四厚度T4及第五厚度T5。 In addition, a top cladding layer 54 is typically deposited by sputtering, followed by electrolytic plating to the desired thickness. Once the desired thickness is reached, the metal patterning process can be used to form the wires 56. The wires 56 are in contact with the electrical isolation member 11, the resin core layer 21, the metal studs 40 and the adhesive 215, and extend from the upper side to the electrical isolation member 11, the resin core layer 21, the metal studs 40, and the adhesive. On agent 215. In the figure, the wires 56 have a fourth thickness T4 (about 0.5 to 50 microns) at the point of contact with the extruded adhesive 215; and have a fifth thickness T5 at the place where the electrical isolation member 11 is contacted. It is substantially equal to the fourth thickness T4; and has a sixth thickness T6 at a position where it is in contact with the resin core layer 21, which is greater than the fourth thickness T4 and the fifth thickness T5.

因此，如圖20所示，所完成之線路板300包括一電性隔離件11、複數個金屬凸柱40、一樹脂芯層21、被擠出之一黏著劑215、複數個防潮蓋52、以及複數導線56。該樹脂芯層21係藉由被擠出之該黏著劑215，機械性地與該電性隔離件11、以及該些金屬凸柱40連接。該些防潮蓋52係由下方完全覆蓋該黏著劑215，以及完全覆蓋介於該電性隔離件11與該黏著劑215、以及介於該些金屬凸柱40與該黏著劑215之間之介面，並側向延伸至該樹脂芯層21下方。該些導線56係包括複數個接觸墊561以及複數個路由電路563，該些接觸墊561係位於該電性隔離件11之該頂側111上，且該些路由電路563係由上方電性連接至該些接觸墊561以及該些金屬凸柱40。 Therefore, as shown in FIG. 20, the completed circuit board 300 includes an electrical isolation member 11, a plurality of metal studs 40, a resin core layer 21, an adhesive 215 extruded, and a plurality of moisture-proof covers 52. And a plurality of wires 56. The resin core layer 21 is mechanically coupled to the electrical separator 11 and the metal studs 40 by the adhesive 215 being extruded. The moisture-proof covers 52 completely cover the adhesive 215 from below, and completely cover the interface between the electrical isolation member 11 and the adhesive 215, and between the metal posts 40 and the adhesive 215. And extending laterally below the resin core layer 21. The wires 56 include a plurality of contact pads 561 and a plurality of routing circuits 563. The contact pads 561 are located on the top side 111 of the electrical isolation member 11, and the routing circuits 563 are electrically connected from above. To the contact pads 561 and the metal studs 40.

[實施例4] [Example 4]

圖21至25係根據本發明第四實施態樣中，不含金屬凸柱之線路板製備方法示意圖。 21 to 25 are schematic views showing a method of preparing a wiring board without metal studs according to a fourth embodiment of the present invention.

為了簡要說明之目的，上述實施例中任何可作相同應用之敘述皆併於此，且無須再重複相同敘述。 For the purpose of brevity, the description of any of the above embodiments that can be used for the same application is the same, and the same description is not repeated.

圖21係堆疊結構20置於載膜31上之結構剖面圖。該堆疊結構20包括一頂部金屬層212、一底部金屬層217及一貼合膜214，該貼合膜214係位於頂部金屬層212與底部金屬層217之間。該堆疊結構20具有一開口206，其係延伸穿過頂部金屬層212、貼合膜214及底部金屬層217。使底部金屬層217接觸載膜31，以將堆疊結構20藉由載膜31之黏性而貼附至載膜31。 21 is a cross-sectional view showing the structure in which the stacked structure 20 is placed on the carrier film 31. The stack structure 20 includes a top metal layer 212 , a bottom metal layer 217 , and a bonding film 214 . The bonding film 214 is between the top metal layer 212 and the bottom metal layer 217 . The stack structure 20 has an opening 206 that extends through the top metal layer 212, the bond film 214, and the bottom metal layer 217. The bottom metal layer 217 is brought into contact with the carrier film 31 to attach the stacked structure 20 to the carrier film 31 by the adhesiveness of the carrier film 31.

圖22係電性隔離件11貼附至載膜31之結構剖面圖。該電性隔離件11係***堆疊結構20之開口206中，並貼附於載膜31上，且電性隔離件11與堆疊結構20間留有一縫隙207。 22 is a cross-sectional view showing the structure in which the electrical separator 11 is attached to the carrier film 31. The electrical isolation member 11 is inserted into the opening 206 of the stacked structure 20 and attached to the carrier film 31, and a gap 207 is left between the electrical isolation member 11 and the stacked structure 20.

圖23係黏著劑215從貼合膜214擠入縫隙207中之結構剖面圖。於被擠出之黏著劑215填充該些縫隙207之後，則固化該貼合膜214以及被擠出之該黏著劑215。據此，該電性隔離件11係藉由縫隙207中的黏著劑215而與樹脂芯層21接合。該樹脂芯層21之頂側201係與頂部金屬層212接合，而底側202則與底部金屬層217接合。於此圖中，自該貼合膜214被擠出之黏著劑215亦稍高於開口206，且溢流至電性隔離件11及頂部金屬層212之上表面上。 Figure 23 is a cross-sectional view showing the structure in which the adhesive 215 is pushed into the slit 207 from the bonding film 214. After the gaps 207 are filled with the extruded adhesive 215, the adhesive film 214 and the adhesive 215 that is extruded are cured. Accordingly, the electrical spacer 11 is bonded to the resin core layer 21 by the adhesive 215 in the slit 207. The top side 201 of the resin core layer 21 is bonded to the top metal layer 212, and the bottom side 202 is joined to the bottom metal layer 217. In this figure, the adhesive 215 extruded from the bonding film 214 is also slightly higher than the opening 206 and overflows onto the upper surface of the electrical spacer 11 and the top metal layer 212.

圖24係移除多餘黏著劑及載膜31後之結構剖面圖。將電性隔 離件11及頂部金屬層212上多餘之黏著劑移除，並且剝離載膜31。據此，該黏著劑215具有顯露的頂表面及底表面，其分別於向上方向及向下方向上，與該電性隔離件11之頂側111及底側112、及頂部與底部金屬層212、217之平坦外表面呈實質上共平面。 Figure 24 is a cross-sectional view showing the structure after removing the excess adhesive and the carrier film 31. Electrically separated Excess adhesive on the release member 11 and the top metal layer 212 is removed, and the carrier film 31 is peeled off. Accordingly, the adhesive 215 has a exposed top surface and a bottom surface, respectively, in an upward direction and a downward direction, and a top side 111 and a bottom side 112 of the electrical spacer 11 and a top and bottom metal layer 212, The flat outer surface of 217 is substantially coplanar.

圖25係形成防潮蓋52以及導線56之結構剖面圖。通常是藉由濺鍍，接著再進行電解電鍍至所需厚度，以沉積形成一底部披覆層51。一旦達到所需厚度後，即可藉由金屬圖案化製程，以形成防潮蓋52。據此，該防潮蓋52包括該底部金屬層217及該底部披覆層51，並由下方接觸且覆蓋該電性隔離件11、該樹脂芯層21、以及被擠出之該黏著劑215。該防潮蓋52係包括一選定部分，其係自該電性隔離件11之底側112側向延伸至樹脂芯層21下方之底部金屬層217。於此圖中，該防潮蓋52於接觸擠出之該黏著劑215之處具有一第一厚度T1(約0.5至50微米)；於接觸該電性隔離件11之處具有一第二厚度T2，其實質上相等於第一厚度T1；於接觸該樹脂芯層21之處具有一第三厚度T3，其大於第一厚度T1及第二厚度T2。 Figure 25 is a cross-sectional view showing the structure of the moisture-proof cover 52 and the wires 56. The bottom cladding layer 51 is usually deposited by sputtering, followed by electrolytic plating to a desired thickness. Once the desired thickness is reached, the metal patterning process can be used to form the moisture barrier cover 52. Accordingly, the moisture-proof cover 52 includes the bottom metal layer 217 and the bottom cladding layer 51, and is in contact with and covers the electrical isolation member 11, the resin core layer 21, and the adhesive 215 that is extruded. The moisture barrier cover 52 includes a selected portion that extends laterally from the bottom side 112 of the electrical isolation member 11 to the bottom metal layer 217 below the resin core layer 21. In the figure, the moisture-proof cover 52 has a first thickness T1 (about 0.5 to 50 micrometers) at the point of contact with the extruded adhesive 215; and a second thickness T2 where it contacts the electrical isolation member 11. It is substantially equal to the first thickness T1; and has a third thickness T3 at the point of contacting the resin core layer 21, which is greater than the first thickness T1 and the second thickness T2.

此外，通常是藉由濺鍍，接著再進行電解電鍍至所需厚度，以沉積形成一頂部披覆層54。一旦達到所需厚度後，即可藉由金屬圖案化製程，以形成導線56。該些導線56係接觸電性隔離件11、樹脂芯層21及黏著劑215，並由上方側向延伸於電性隔離件11、樹脂芯層21及黏著劑215上。於此圖中，該些導線56於接觸擠出之該黏著劑215之處具有第四厚度T4(約0.5至50微米)；於接觸該電性隔離件11之處具有第五厚度T5，其實質上相等於第四厚度T4；於接觸該樹脂芯層21之處具有第六厚度T6，其大於第四厚度T4及第五厚度T5。 In addition, a top cladding layer 54 is typically deposited by sputtering, followed by electrolytic plating to the desired thickness. Once the desired thickness is reached, the metal patterning process can be used to form the wires 56. The wires 56 are in contact with the electrical separator 11, the resin core layer 21, and the adhesive 215, and extend from the upper side to the electrical separator 11, the resin core layer 21, and the adhesive 215. In the figure, the wires 56 have a fourth thickness T4 (about 0.5 to 50 microns) at the point of contact with the extruded adhesive 215; and have a fifth thickness T5 at the place where the electrical isolation member 11 is contacted. It is substantially equal to the fourth thickness T4; and has a sixth thickness T6 at a position where it is in contact with the resin core layer 21, which is greater than the fourth thickness T4 and the fifth thickness T5.

因此，如圖25所示，所完成之線路板400包括一電性隔離件11、一樹脂芯層21、被擠出之一黏著劑215、一防潮蓋52、以及複數導線56。該樹脂芯層21係藉由被擠出之該黏著劑215，機械性地與該電性隔離件11。該防潮蓋52係由下方完全覆蓋該黏著劑215，以及完全覆蓋介於該電性隔離件11與該黏著劑215之間之介面，並側向延伸至該樹脂芯層21下方。該些導線56係包括複數個接觸墊561以及複數個路由電路563，該些接觸墊561係位於該電性隔離件11之該頂側111上，且該些路由電路563係由接觸墊561側向延伸至樹脂芯層21上。 Therefore, as shown in FIG. 25, the completed circuit board 400 includes an electrical spacer 11, a resin core layer 21, an adhesive 215 which is extruded, a moisture proof cover 52, and a plurality of wires 56. The resin core layer 21 is mechanically coupled to the electrical separator 11 by the adhesive 215 that is extruded. The moisture-proof cover 52 completely covers the adhesive 215 from below, and completely covers the interface between the electrical isolation member 11 and the adhesive 215, and extends laterally below the resin core layer 21. The wires 56 include a plurality of contact pads 561 and a plurality of routing circuits 563. The contact pads 561 are located on the top side 111 of the electrical isolation member 11 and the routing circuits 563 are connected by the contact pads 561. The direction is extended to the resin core layer 21.

[實施例5] [Example 5]

圖26-29係根據本發明之第五實施態樣中，線路板之另一製備方法示意圖，該線路板具有側向覆蓋一電性隔離件以及複數個金屬凸柱之一埋封塑料。 26-29 is a schematic view showing another method of fabricating a circuit board according to a fifth embodiment of the present invention, the circuit board having a lateral covering of an electrical spacer and a plurality of metal studs embedding the plastic.

為了簡要說明之目的，上述實施例中任何可作相同應用之敘述皆併於此，且無須再重複相同敘述。 For the purpose of brevity, the description of any of the above embodiments that can be used for the same application is the same, and the same description is not repeated.

圖26係一電性隔離件11以及複數個金屬凸柱40於一載膜31上之結構剖面圖。該電性隔離件11以及該些金屬凸柱40係藉由與該載膜31接觸之平坦的底側112、402，而貼附至該載膜31上。 FIG. 26 is a cross-sectional view showing the structure of an electrical spacer 11 and a plurality of metal studs 40 on a carrier film 31. The electrical isolator 11 and the metal studs 40 are attached to the carrier film 31 by the flat bottom sides 112 and 402 that are in contact with the carrier film 31.

圖27係提供一埋封塑料244之結構剖面圖。該埋封塑料244可藉由膜封製程(molding process)而形成，或可藉由如層壓環氧樹脂或聚醯亞胺等其他方法而製備。該埋封塑料244由上方覆蓋該電性隔離件11、該些金屬凸柱40、以及該載膜31，並側向覆蓋、圍繞、且同形披覆該電性隔離件11以及該些金屬凸柱40之側壁，且自該電性隔離件11以及該些金屬凸柱 40側向延伸至該結構之外圍邊緣。 Figure 27 is a cross-sectional view showing the structure of a buried plastic 244. The embedding plastic 244 may be formed by a film molding process, or may be prepared by other methods such as laminating epoxy resin or polyimine. The buried plastic 244 covers the electrical isolation member 11 , the metal protrusions 40 , and the carrier film 31 from above, and laterally covers, surrounds, and conforms to the electrical isolation member 11 and the metal protrusions. a sidewall of the pillar 40, and from the electrical isolator 11 and the metal studs 40 extends laterally to the peripheral edge of the structure.

圖28係移除該載膜31以及該埋封塑料244之上部分後之結構剖面圖。該載膜31係自該電性隔離件11、該些金屬凸柱40、以及該埋封塑料244剝離。該埋封塑料244之上部分可藉由拋光/研磨而移除。於拋光/研磨之後，該電性隔離件11、該些金屬凸柱40、以及該埋封塑料244係實質上於經拋光/研磨之一平坦上表面上與彼此共平面。據此，該電性隔離件11係與一樹脂芯層24結合，且樹脂芯層24之相反頂側201及底側202係於向上方向以及向下方向上，分別與該電性隔離件11之平坦的頂側111及底側112、以及該些金屬凸柱40之平坦的頂側401及底側402呈實質上共平面。 Figure 28 is a cross-sectional view showing the structure of the carrier film 31 and the upper portion of the embedding plastic 244. The carrier film 31 is peeled off from the electrical isolator 11, the metal studs 40, and the embedding plastic 244. The upper portion of the embedding plastic 244 can be removed by polishing/grinding. After polishing/polishing, the electrical spacers 11, the metal studs 40, and the embedding plastic 244 are substantially coplanar with each other on substantially one of the polished/grinded flat upper surfaces. Accordingly, the electrical isolation member 11 is coupled to a resin core layer 24, and the opposite top side 201 and the bottom side 202 of the resin core layer 24 are in the upward direction and the downward direction, respectively, and the electrical isolation member 11 The flat top side 111 and the bottom side 112, and the flat top side 401 and the bottom side 402 of the metal studs 40 are substantially coplanar.

圖29係形成防潮蓋52以及導線56之結構剖面圖。該些防潮蓋52及該些導線56可藉由一濺射程序接著一電解電鍍程序以沉積至一所需厚度。當達到其所需之厚度時，則執行一金屬圖案化程序以形成該些防潮蓋52以及該些導線56。該些防潮蓋52係厚度為0.5至50微米之圖案化金屬層，且自下方完全覆蓋該電性隔離件11與該埋封塑料244之間、以及該些金屬凸柱40與該埋封塑料244之間之介面。該些導線56係於該電性隔離件11之該頂側111、該樹脂芯層24之該頂側201、以及該些金屬凸柱40之該頂側401上側向延伸，並具有0.5至50微米之厚度。 Figure 29 is a cross-sectional view showing the structure of the moisture-proof cover 52 and the wires 56. The moisture barriers 52 and the wires 56 can be deposited to a desired thickness by a sputtering process followed by an electrolytic plating process. When the desired thickness is reached, a metal patterning process is performed to form the moisture barriers 52 and the wires 56. The moisture-proof cover 52 is a patterned metal layer having a thickness of 0.5 to 50 micrometers, and completely covers the electrical isolation member 11 and the buried plastic 244 from below, and the metal protrusions 40 and the buried plastic Interface between 244. The wires 56 extend laterally on the top side 111 of the electrical isolation member 11 , the top side 201 of the resin core layer 24 , and the top side 401 of the metal posts 40 , and have 0.5 to 50 The thickness of the micron.

據此，如圖29所示，所完成之線路板500包括一電性隔離件11、複數個金屬凸柱40、一樹脂芯層24、複數個防潮蓋52、以及複數導線56。該樹脂芯層24覆蓋且圍繞該電性隔離件11以及該些金屬凸柱40之側壁，並連接至該電性隔離件11以及該些金屬凸柱40。該些防潮蓋52其中之一者係於該電性隔離件11下方側向延伸，並延伸超過該電性隔離件11之外 圍邊緣；而其他防潮蓋52係於該些金屬凸柱40下方側向延伸，並延伸超過該些金屬凸柱40之外圍邊緣。該些導線56包括複數個接觸墊561以及複數個路由電路563，其中該些接觸墊561係位於該電性隔離件11之該頂側111上，而該些路由電路563係接觸且電性連接至該些接觸墊561以及該些金屬凸柱40，並由上方完全覆蓋該些金屬凸柱40與該埋封塑料244之間之介面。 Accordingly, as shown in FIG. 29, the completed circuit board 500 includes an electrical isolation member 11, a plurality of metal studs 40, a resin core layer 24, a plurality of moisture-proof covers 52, and a plurality of wires 56. The resin core layer 24 covers and surrounds the electrical isolation member 11 and sidewalls of the metal pillars 40 and is connected to the electrical isolation member 11 and the metal bumps 40. One of the moisture-proof covers 52 extends laterally below the electrical isolation member 11 and extends beyond the electrical isolation member 11 The other edges of the metal studs 40 extend laterally beyond the metal studs 40 and extend beyond the peripheral edges of the metal studs 40. The wires 56 include a plurality of contact pads 561 and a plurality of routing circuits 563, wherein the contact pads 561 are located on the top side 111 of the electrical isolation member 11, and the routing circuits 563 are in contact and electrically connected. To the contact pads 561 and the metal studs 40, the interface between the metal studs 40 and the embedding plastic 244 is completely covered by the upper surface.

如上述實施態樣所記載，本發明建構一種可展現優異可靠度之獨特線路板，其包括一電性隔離件、一樹脂芯層、一防潮蓋以及複數導線，其中，(i)該電性隔離件具有平坦之頂側及底側；(ii)該樹脂芯層覆蓋且圍繞該電性隔離件之側壁；(iii)該防潮蓋自該電性隔離件側向延伸至該樹脂芯層，且自電性隔離件及周圍塑料之底側，完全覆蓋該電性隔離件與周圍塑料之間的介面；(iv)該些導線包括接觸墊及路由電路，該些接觸墊係於該電性隔離件之該頂側上側向延伸，而該些路由電路係由該些接觸墊側向延伸至該樹脂芯層上。 As described in the above embodiments, the present invention constructs a unique circuit board that exhibits excellent reliability, including an electrical isolation member, a resin core layer, a moisture barrier cover, and a plurality of wires, wherein (i) the electrical property The spacer has a flat top side and a bottom side; (ii) the resin core layer covers and surrounds the sidewall of the electrical spacer; (iii) the moisture barrier extends laterally from the electrical spacer to the resin core layer, And the bottom surface of the self-electrical isolation member and the surrounding plastic completely covers the interface between the electrical isolation member and the surrounding plastic; (iv) the wires include contact pads and routing circuits, and the contact pads are connected to the electrical The top side of the spacer extends laterally, and the routing circuits extend laterally from the contact pads to the resin core layer.

選擇性地，該線路板更可包括金屬凸柱，其中(i)該些金屬凸柱各自具有平坦之頂側及底側；(ii)該樹脂芯層更覆蓋且圍繞金屬凸柱之側壁；(iii)該些路由電路電性連接該些接觸墊及該些金屬凸柱。 Optionally, the circuit board may further comprise a metal stud, wherein (i) the metal studs each have a flat top side and a bottom side; (ii) the resin core layer covers and surrounds the side wall of the metal stud; (iii) The routing circuits are electrically connected to the contact pads and the metal studs.

該電性隔離件可提供做為貼附晶片之平台，而該些選擇性的金屬凸柱可作為垂直的信號傳輸途徑，或著提供能量傳遞及返回之接地/電源面。具體而言，該電性隔離件係由熱傳導以及電性絕緣材料所構成，並通常具有高彈性模數、及低熱膨脹係數(例如為2 x 10-6K-1至10 x 10-6K-1)。因此，該電性隔離件可對一半導體晶片提供一熱膨脹係數補償之接觸介面，其熱膨脹係數可與接置其上之半導體晶片相互匹配，從而可大幅減少 或彌補由熱膨脹係數不匹配所導致的內部壓力。此外，該電性隔離件亦可對該晶片提供初步的熱傳導，使得該晶片所產生的熱能被傳導出去。 The electrical isolation member can be provided as a platform for attaching the wafer, and the selective metal studs can serve as a vertical signal transmission path or a ground/power supply surface for providing energy transfer and return. Specifically, the electrical isolation member is composed of heat conduction and an electrically insulating material, and generally has a high modulus of elasticity and a low coefficient of thermal expansion (for example, 2 x 10 -6 K -1 to 10 x 10 -6 K) -1 ). Therefore, the electrical isolation member can provide a thermal expansion coefficient compensation contact interface to a semiconductor wafer, and the thermal expansion coefficient can be matched with the semiconductor wafers attached thereto, thereby greatly reducing or compensating for the thermal expansion coefficient mismatch. Internal pressure. In addition, the electrical isolation member can also provide preliminary thermal conduction to the wafer such that thermal energy generated by the wafer is conducted out.

該樹脂芯層可藉由層壓程序而與該電性隔離件及該些選擇性金屬凸柱接合。舉例而言，可先對電性隔離件進行金屬化製程，藉由分別沉積一頂部及底部金屬膜(通常為銅膜)至該電性隔離件之頂側及底側上，以製成具有電性隔離件、頂部金屬膜及底部金屬膜之一導熱塊體，接著將該導熱塊體以及該些選擇性金屬凸柱分別嵌入至一堆疊結構之第一及第二開口中，其中該堆疊結構係於一頂部金屬層與一底部金屬層之間設有一貼合膜，接著於一層壓程序中施加熱及壓力以固化該貼合膜。或者，可將未形成頂部及底部金屬膜之電性隔離件以及該些選擇性金屬凸柱，分別嵌入至一堆疊結構之第一及第二開口中，以進行層壓程序。藉由該層壓程序，該貼合膜可提供該頂部金屬層與該底部金屬層之間一穩固的機械性連接，且一黏著劑係自該貼合膜被擠出以覆蓋、圍繞、且同形披覆於該導熱塊體以及該些選擇性金屬凸柱之側壁。因此，所形成之一樹脂芯層具有分別與該頂部及底部金屬層(通常為銅層)連接之頂側及底側，且藉由介於該導熱塊體與該樹脂芯層之間，以及藉由介於該些選擇性金屬凸柱與該樹脂芯層之間被擠出之該黏著劑而貼附至該導熱塊體及該些選擇性金屬凸柱之側壁。於具有頂部及底部金屬膜之導熱塊體態樣中，該黏著劑較佳係具有實質上與該電性隔離件上之該頂部金屬膜之外表面、該樹脂芯層上之該頂部金屬層之外表面、以及該些選擇性金屬凸柱之該頂側共平面之一頂表面，並具有實質上與該電性隔離件下方之該底部金屬膜之外表面、該樹脂芯層下方之該底部金屬層之外表面、以及該些選擇性金屬凸柱之底側共平面之 一底表面。於不具頂部及底部金屬膜之導熱塊體另一態樣中，該黏著劑較佳係具有實質上與該電性隔離件之頂側、該樹脂芯層上之該頂部金屬層之外表面、以及該些選擇性金屬凸柱之頂側共平面之一頂表面，並具有實質上與該電性隔離件之底側、該樹脂芯層下方之該底部金屬層之外表面、以及該些選擇性金屬凸柱之底側共平面之一底表面。 The resin core layer can be joined to the electrical isolation member and the selective metal studs by a lamination process. For example, the electrical isolation can be first metallized by depositing a top and bottom metal film (usually a copper film) onto the top and bottom sides of the electrical isolation member to form a thermally conductive block of the electrical separator, the top metal film and the bottom metal film, and then the thermal block and the selective metal studs are respectively embedded in the first and second openings of a stack structure, wherein the stack The structure is provided with a bonding film between a top metal layer and a bottom metal layer, and then heat and pressure are applied in a lamination process to cure the bonding film. Alternatively, the electrical isolation members not forming the top and bottom metal films and the selective metal bumps may be embedded in the first and second openings of a stacked structure for lamination. By the laminating process, the bonding film can provide a stable mechanical connection between the top metal layer and the bottom metal layer, and an adhesive is extruded from the bonding film to cover, surround, and The same shape is coated on the heat conducting block and the sidewalls of the selective metal studs. Therefore, one of the resin core layers is formed with a top side and a bottom side respectively connected to the top and bottom metal layers (usually a copper layer), and is interposed between the heat conductive block and the resin core layer, and Attached to the thermally conductive block and the sidewalls of the selective metal studs by the adhesive interposed between the selective metal studs and the resin core layer. In the thermally conductive block aspect having the top and bottom metal films, the adhesive preferably has substantially the outer surface of the top metal film on the electrical isolation member and the top metal layer on the resin core layer. An outer surface, and a top surface of the top side coplanar of the selective metal studs, and having an outer surface of the bottom metal film substantially below the electrical isolation member, the bottom portion below the resin core layer The outer surface of the metal layer and the bottom side of the selective metal studs are coplanar a bottom surface. In another aspect of the thermally conductive block having no top and bottom metal films, the adhesive preferably has substantially the top side of the electrical isolation member, the outer surface of the top metal layer on the resin core layer, And a top surface of the top side coplanar of the selective metal studs, and having substantially the bottom side of the electrical spacer, the outer surface of the bottom metal layer below the resin core layer, and the selection One of the bottom surfaces of the bottom side of the metal stud.

於本發明另一態樣中，該樹脂芯層亦可藉由膜封(molding)製程，或可藉由如層壓環氧樹脂或聚醯亞胺等其他方法而形成，其形成一埋封塑料，且該埋封塑料係圍繞、同形披覆、且接觸該電性隔離件以及該些金屬凸柱之側壁。因此，該樹脂芯層可具有實質上分別與該電性隔離件以及該些金屬凸柱之頂側共平面之一頂側，以及與該電性隔離件以及該些金屬凸柱之底側共平面之一底側。 In another aspect of the present invention, the resin core layer may also be formed by a film molding process, or may be formed by other methods such as laminating epoxy resin or polyimide, forming a buried seal. Plastic, and the embedding plastic surrounds, conforms, and contacts the electrical isolation member and sidewalls of the metal posts. Therefore, the resin core layer may have a top side that is substantially coplanar with the electrical isolation member and the top side of the metal bumps, and a total of the electrical isolation member and the bottom side of the metal bumps. One of the bottom sides of the plane.

於上述之層壓程序或膜封程序之前，可使用一載膜(通常為黏著膠帶)以提供暫時性的固定力。舉例而言，該載膜可暫時性地貼附至該導熱塊體之頂側或底側、該些選擇性金屬凸柱之頂側或底側、該堆疊結構之該頂部金屬層或該底部金屬層，以分別將該導熱塊體以及該些金屬凸柱固定於該堆疊結構之第一及第二開口內，接著再進行堆疊結構之層壓程序。至於膜封程序，該載膜可貼附至該電性隔離件之頂側或底側、以及該些金屬凸柱之頂側或底側上，接著形成該埋封塑料以覆蓋該載膜以及該電性隔離件與該些金屬凸柱之側壁。如上述將該電性隔離件以及該些選擇性金屬凸柱接合至該樹脂芯層之後，該載膜係於沉積防潮蓋/導線之前移除。 A carrier film (usually an adhesive tape) can be used to provide a temporary holding force prior to the lamination procedure or film sealing procedure described above. For example, the carrier film may be temporarily attached to the top or bottom side of the thermally conductive block, the top or bottom side of the selective metal studs, the top metal layer or the bottom of the stacked structure. And a metal layer to respectively fix the heat conductive block and the metal bumps in the first and second openings of the stacked structure, and then perform a lamination process of the stacked structure. As for the film sealing process, the carrier film may be attached to the top side or the bottom side of the electrical spacer, and the top side or the bottom side of the metal studs, and then the embedding plastic is formed to cover the carrier film and The electrical isolation member and the sidewalls of the metal posts. After the electrical isolation member and the selective metal studs are bonded to the resin core layer as described above, the carrier film is removed prior to depositing the moisture barrier cover/wire.

該防潮蓋可為金屬層(通常為銅層)，且由電性隔離件及樹脂芯層之底側，完全覆蓋兩個熱膨脹係數不匹配材料之間之介面。根據該堆 疊結構之層壓程序而將該樹脂芯層與該電性隔離件以及該些選擇性金屬凸塊結合之方法，該防潮蓋可接觸且完全覆蓋該電性隔離件與該樹脂芯層之間的黏著劑底表面，以及可完全覆蓋該電性隔離件與該黏著劑之間的介面，並更側向延伸於該樹脂芯層之底側上。在具有頂部及底部金屬膜之導熱塊體態樣中，該防潮蓋可藉由無電電鍍後，接著進行電解電鍍而形成，藉此可沉積一披覆層於該黏著劑之底表面、該電性隔離件下方之該底部金屬膜之外表面、及該樹脂芯層下方之該底部金屬層之外表面上，進而形成該防潮蓋。據此，該防潮蓋可包括一選定部分，該選定部分係自該電性隔離件下方之底部金屬膜側向延伸至該樹脂芯層下方之底部金屬層。更具體而言，該防潮蓋包括該電性隔離件下方之該底部金屬膜以及該堆疊結構之該底部金屬層，並於接觸該黏著劑之處具有一第一厚度(與該披覆層有相同之厚度，約為0.5至50微米)、於接觸該電性隔離件之處具有一第二厚度(相同於該披覆層以及該底部金屬膜相加之厚度)、於接觸該樹脂芯層之處具有一第三厚度(相同於該披覆層以及該底部金屬層相加之厚度)、以及一平坦的底表面。該第二厚度以及該第三厚度係大於該第一厚度，且該第二厚度可與該第三厚度相等或不相等。於使用不具金屬膜之電性隔離件進行層壓程序之另一態樣中，該防潮蓋較佳係藉由濺鍍後，接著進行電解電鍍而形成，藉此可沉積一披覆層於該黏著劑之底表面、該電性隔離件之底側、及該樹脂芯層下方之該底部金屬層之外表面上，進行形成防潮蓋。據此，該防潮蓋可包括一選定部分，該選定部分係自該電性隔離件之底側側向延伸至該樹脂芯層下方之底部金屬層。更具體而言，該防潮蓋包括該堆疊結構之該底部金屬層，並於接觸該黏著劑之處具有一第一厚度(與該披覆層有相同之 厚度，約為0.5至50微米)、於接觸該電性隔離件之處具有一第二厚度(實質上相等於第一厚度)、於接觸該樹脂芯層之處具有一第三厚度(相同於該披覆層以及該底部金屬層相加之厚度，大於第一厚度及第二厚度)、以及一平坦的底表面。另一方面，當該樹脂芯層係藉由埋封塑料而形成時，該防潮蓋可藉由薄膜濺鍍後接著電解電鍍之方法而形成，藉此可沉積一披覆層於該電性隔離件及該埋封塑料之底側上，進行形成防潮蓋。於此態樣中，該防潮蓋可側向延伸於電性隔離件及樹脂芯層之底側上，並完全覆蓋電性隔離件與埋封塑料間之介面，且具有0.5至50微米之厚度。同樣地，於具有金屬凸柱作為垂直電性連接之線路板中，較佳係形成額外防潮蓋，其中該些額外防潮蓋各自具有一選定部分，且該選定部分係由金屬凸柱底側側向延伸至堆疊結構之底部金屬層，或由金屬凸柱底側側向延伸至埋封塑料底側。據此，該線路板可包含複數個相互間隔之防潮蓋，以完全覆蓋CTE不匹配之介面。更具體地說，於藉由堆疊結構之層壓程序以形成樹脂芯層之態樣中，該些額外防潮蓋可接觸並完全覆蓋金屬凸柱與樹脂芯層間之黏著劑的底表面，同時亦接觸並完全覆蓋金屬凸柱與黏著劑間的介面，且更側向延伸至樹脂芯層之底側上。至於藉由埋封塑料以形成樹脂芯層之態樣中，該些額外防潮蓋可側向延伸於埋封塑料之底側上，並完全覆蓋金屬凸柱與埋封塑料間的介面。在此，該些額外防潮蓋之其他細節皆如同上述防潮蓋之敘述，故不再贅述。 The moisture-proof cover may be a metal layer (usually a copper layer), and the bottom side of the electrical separator and the resin core layer completely covers the interface between the two coefficients of thermal expansion mismatched material. According to the heap a method of laminating a laminated structure to bond the resin core layer to the electrical isolation member and the selective metal bumps, the moisture barrier cover being in contact with and completely covering the electrical isolation member and the resin core layer The bottom surface of the adhesive and the interface between the electrical separator and the adhesive can be completely covered and extend laterally on the bottom side of the resin core layer. In a thermally conductive block body having a top and bottom metal film, the moisture barrier cover can be formed by electroless plating followed by electrolytic plating, whereby a coating layer can be deposited on the bottom surface of the adhesive, the electrical property. The moisture-proof cover is further formed on the outer surface of the bottom metal film under the spacer and on the outer surface of the bottom metal layer under the resin core layer. Accordingly, the moisture barrier cover can include a selected portion extending laterally from the bottom metal film beneath the electrical spacer to a bottom metal layer below the resin core layer. More specifically, the moisture-proof cover includes the bottom metal film under the electrical isolation member and the bottom metal layer of the stacked structure, and has a first thickness at a place where the adhesive is contacted (with the coating layer The same thickness, about 0.5 to 50 micrometers), having a second thickness (same as the thickness of the cladding layer and the bottom metal film added) in contact with the electrical spacer, in contact with the resin core layer There is a third thickness (same as the thickness of the cladding layer and the bottom metal layer added), and a flat bottom surface. The second thickness and the third thickness are greater than the first thickness, and the second thickness may be equal or unequal to the third thickness. In another aspect of the lamination process using an electrical isolator without a metal film, the moisture barrier is preferably formed by sputtering followed by electrolytic plating, whereby a coating layer can be deposited thereon. A moisture-proof cover is formed on the bottom surface of the adhesive, the bottom side of the electrical separator, and the outer surface of the bottom metal layer below the resin core layer. Accordingly, the moisture barrier cover can include a selected portion that extends laterally from the bottom side of the electrical isolation member to a bottom metal layer below the resin core layer. More specifically, the moisture barrier cover includes the bottom metal layer of the stack structure and has a first thickness at the place where the adhesive is contacted (the same as the cladding layer) a thickness of about 0.5 to 50 μm) having a second thickness (substantially equal to the first thickness) in contact with the electrical spacer, and a third thickness in contact with the resin core layer (same as The cladding layer and the bottom metal layer are added to have a thickness greater than the first thickness and the second thickness, and a flat bottom surface. On the other hand, when the resin core layer is formed by embedding a plastic, the moisture-proof cover can be formed by a method of film sputtering followed by electrolytic plating, whereby a coating layer can be deposited on the electrical isolation. A moisture-proof cover is formed on the bottom side of the piece and the embedding plastic. In this aspect, the moisture-proof cover can extend laterally on the bottom side of the electrical isolation member and the resin core layer, and completely covers the interface between the electrical isolation member and the embedded plastic, and has a thickness of 0.5 to 50 microns. . Similarly, in a circuit board having a metal stud as a vertical electrical connection, it is preferred to form an additional moisture proof cover, wherein each of the additional moisture proof covers has a selected portion, and the selected portion is formed by a bottom side of the metal stud. Extending to the bottom metal layer of the stacked structure, or laterally extending from the bottom side of the metal stud to the bottom side of the embedding plastic. Accordingly, the circuit board can include a plurality of mutually spaced moisture barriers to completely cover the CTE mismatched interface. More specifically, in the aspect of forming a resin core layer by a lamination process of a stacked structure, the additional moisture-proof covers can contact and completely cover the bottom surface of the adhesive between the metal stud and the resin core layer, and also The interface between the metal stud and the adhesive is contacted and completely covered, and extends laterally to the bottom side of the resin core layer. In the aspect of embedding the plastic to form the resin core layer, the additional moisture-proof covers may extend laterally on the bottom side of the embedding plastic and completely cover the interface between the metal stud and the embedding plastic. Here, other details of the additional moisture-proof covers are as described in the above-mentioned moisture-proof cover, and therefore will not be described again.

該些導線係包括複數個接觸墊及複數路由電路，其中接觸墊位於電性隔離件之頂側上，而路由電路由接觸墊側向延伸至樹脂芯層上。此外，於具有金屬凸柱作為垂直電性連接之線路板中，路由電路係電性連 接接觸墊及金屬凸柱。更具體而言，該些路由電路具有自金屬凸柱頂側側向延伸至電性隔離件頂側之選定部分。因此，該些路由電路可接觸並提供該些金屬凸柱與該些接觸墊之間之信號傳遞，並完全覆蓋該些金屬凸柱頂側周圍熱膨脹係數不匹配之介面。該些接觸墊可提供半導體裝置連接之電性接點，而該些路由電路可提供水平的路由，且該些路由電路可電性耦接至可提供垂直電性連接之該些金屬凸柱上。該些導線可藉由金屬沉積後，再進行金屬圖案化而形成。在具有頂部及底部金屬膜之導熱塊體態樣中，可藉由一無電電鍍程序，接著進行電解電鍍而沉積形成該些導線。具體而言，一披覆層可被沉積至並覆蓋該電性隔離件之該頂部金屬膜、該黏著劑之該頂表面、該樹脂芯層上之該頂部金屬層、以及該些選擇性金屬凸柱之該頂側，接著進行一圖案化程序以形成該些接觸墊以及該些路由電路，其中，該些接觸墊係位於該電性隔離件之該頂側上，而該些路由電路係側向延伸於電性隔離件、黏著劑、樹脂芯層及金屬凸柱之頂側上。因此，於此態樣中，該些接觸墊具有相同於該頂部金屬膜與該披覆層相加之厚度，而該些路由電路係於接觸黏著劑之處具有相同於該披覆層之厚度、於接觸該電性隔離件之處具有相同於該頂部金屬膜與該披覆層相加之厚度、以及於接觸該樹脂芯層之處具有相同於該頂部金屬層與該披覆層相加之厚度。此外，於具有金屬柱作為垂直電性連接之線路板中，路由電路較佳係完全覆蓋介於金屬凸柱與樹脂芯層間之黏著劑的頂表面，以及完全覆蓋金屬凸柱與黏著劑間之介面，並側向延伸至接觸墊以及金屬凸柱，以作為濕氣屏障，避免濕氣經由介面上之裂損而滲入。於使用不具金屬膜之電性隔離件進行層壓程序之另一態樣中，該披覆層可藉由一濺鍍程序，接著進行電解電鍍 而沉積形成，其覆蓋電性隔離件頂側、黏著劑頂表面、樹脂芯層上之頂部金屬層、及選擇性金屬凸柱之頂側。據此，於此另一態樣中，導線於接觸黏著劑及電性隔離件處分別具有相同於該披覆層之厚度，而於接觸樹脂芯層處則具有相同於頂部金屬層與披覆層相加之厚度。另一方面，當該樹脂芯層係藉由埋封塑料而形成時，該些導線通常係藉由一濺鍍程序後，接著進行電解電鍍而形成。於沉積程序後，則執行之圖案化程序以形成複數個接觸墊以及複數路由電路，其中該些接觸墊係形成於該電性隔離件之該頂側上，而該些路由電路係側向延神於電性隔離件、埋封塑料及金屬凸柱之頂側上。於此態樣中，該些接觸墊以及該些路由電路通常具有相同的厚度。此外，於具有金屬柱作為垂直電性連接之線路板中，路由電路較佳係完全覆蓋金屬凸柱與埋封塑料之間之介面，並側向延伸至接觸墊以及金屬凸柱，以作為濕氣屏障，避免濕氣經由介面上之裂損而滲入。 The wires comprise a plurality of contact pads and a plurality of routing circuits, wherein the contact pads are on a top side of the electrical isolation member and the routing circuit extends laterally from the contact pads to the resin core layer. In addition, in a circuit board having a metal stud as a vertical electrical connection, the routing circuit is electrically connected Contact pads and metal studs. More specifically, the routing circuits have selected portions that extend laterally from the top side of the metal stud to the top side of the electrical isolator. Therefore, the routing circuits can contact and provide signal transmission between the metal posts and the contact pads, and completely cover the interface of thermal expansion coefficient mismatch around the top sides of the metal posts. The contact pads can provide electrical contacts for the connection of the semiconductor devices, and the routing circuits can provide horizontal routing, and the routing circuits can be electrically coupled to the metal posts that can provide vertical electrical connections. . The wires can be formed by metal deposition and then metal patterning. In the thermally conductive block aspect having the top and bottom metal films, the wires can be deposited by an electroless plating process followed by electrolytic plating. Specifically, a cladding layer may be deposited to and cover the top metal film of the electrical isolation member, the top surface of the adhesive, the top metal layer on the resin core layer, and the selective metal The top side of the stud is followed by a patterning process to form the contact pads and the routing circuits, wherein the contact pads are on the top side of the electrical isolation member, and the routing circuits are The lateral extension extends over the top side of the electrical isolation member, the adhesive, the resin core layer, and the metal stud. Therefore, in this aspect, the contact pads have the same thickness as the top metal film and the cap layer, and the routing circuits have the same thickness as the cap layer at the place where the adhesive is contacted. Wherein the contact with the electrical spacer has the same thickness as the top metal film and the cladding layer, and the contact with the resin core layer is the same as the top metal layer and the cladding layer The thickness. In addition, in a circuit board having a metal post as a vertical electrical connection, the routing circuit preferably completely covers the top surface of the adhesive between the metal stud and the resin core layer, and completely covers the metal stud and the adhesive. The interface extends laterally to the contact pads and metal studs as a moisture barrier to prevent moisture from penetrating through the interface. In another aspect of the lamination process using an electrical barrier that does not have a metal film, the cladding layer can be electroplated by a sputtering process followed by electrolytic plating. The deposition is formed by covering the top side of the electrical spacer, the top surface of the adhesive, the top metal layer on the resin core layer, and the top side of the selective metal stud. Accordingly, in another aspect, the wires have the same thickness as the coating layer at the contact adhesive and the electrical isolation member, and have the same top metal layer and the cladding at the contact resin core layer. The layers are added to the thickness. On the other hand, when the resin core layer is formed by embedding a plastic, the wires are usually formed by a sputtering process followed by electrolytic plating. After the deposition process, a patterning process is performed to form a plurality of contact pads and a plurality of routing circuits, wherein the contact pads are formed on the top side of the electrical isolation member, and the routing circuits are laterally extended God is on the top side of the electrical insulation, embedding plastic and metal studs. In this aspect, the contact pads and the routing circuits typically have the same thickness. In addition, in a circuit board having a metal post as a vertical electrical connection, the routing circuit preferably completely covers the interface between the metal stud and the embedding plastic, and extends laterally to the contact pad and the metal stud to serve as a wet The gas barrier prevents moisture from penetrating through the cracks on the interface.

本發明更提供了一種半導體組體，其中如晶片之半導體裝置係安裝至前述線路板之接觸墊上。具體而言，可於線路板之接觸墊上使用多種連接介質(如金、或焊料凸塊等)，以將該半導體裝置電性連接至該線路板，此外，可提供一蓋體以封裝其中之半導體裝置。據此，即使熱膨脹係數不匹配之兩種材料之間的介面產生裂痕，該線路板之防潮蓋可防止來自外在環境之水氣通過該裂痕而進入該半導體組體內部。此外，結合至該線路板之該電性隔離件可對該半導體裝置提供熱膨脹係數補償的接觸介面，且該半導體裝置產生的熱可傳導至該電性隔離件上，且更散逸至位於該電性隔離件底下並側向延伸超過該電性隔離件外圍邊緣之該防潮蓋，該防潮蓋較該電性隔離件具有較大的散熱面積。 The present invention further provides a semiconductor package in which a semiconductor device such as a wafer is mounted to a contact pad of the aforementioned wiring board. Specifically, a plurality of connection media (such as gold, or solder bumps, etc.) may be used on the contact pads of the circuit board to electrically connect the semiconductor device to the circuit board. Further, a cover may be provided to encapsulate the same. Semiconductor device. Accordingly, even if the interface between the two materials whose thermal expansion coefficients do not match is cracked, the moisture-proof cover of the wiring board can prevent moisture from the external environment from entering the inside of the semiconductor body through the crack. In addition, the electrical isolation member coupled to the circuit board can provide a thermal expansion coefficient compensated contact interface to the semiconductor device, and heat generated by the semiconductor device can be conducted to the electrical isolation member and more dissipated to the electrical The moisture barrier cover is disposed under the lateral spacer and laterally beyond the peripheral edge of the electrical spacer, and the moisture barrier has a larger heat dissipation area than the electrical spacer.

該組體可為一第一階(first-level)或第二階(second-level)之單一晶片或多晶片之裝置，舉例而言，該組體可為包括一單一晶片或多晶片之第一階封裝結構。或者，該組體可為包含單一封裝體或多封裝體之第二階模組，且每一封裝體可包括單一晶片或多個晶片，該晶片可為經封裝或未經封裝之晶片。此外，該晶片可為裸晶、或晶圓級封裝晶片等。 The group may be a first-level or second-level single-wafer or multi-chip device. For example, the group may be a single chip or a multi-chip. First-order package structure. Alternatively, the group may be a second-order module comprising a single package or a multi-package, and each package may comprise a single wafer or a plurality of wafers, and the wafer may be a packaged or unpackaged wafer. Additionally, the wafer can be a die, wafer level package wafer, or the like.

「覆蓋」一詞意指於垂直及/或側面方向上不完全以及完全覆蓋。例如，當該些防潮蓋於面朝向下方向時，該半導體裝置係由上方覆蓋該電性隔離件，不論該接觸墊等之其他元件是否介於該半導體裝置與該電性隔離件之間。 The term "overlay" means incomplete and complete coverage in the vertical and / or lateral directions. For example, when the moisture-proof covers are facing downward, the semiconductor device covers the electrical isolation member from above, regardless of whether other components of the contact pads or the like are interposed between the semiconductor device and the electrical isolation member.

「設置於...上」及「貼附至...上」一詞包括與單一或多個元件間之接觸與非接觸。例如，該導熱塊體以及該些金屬凸柱係貼附至該載膜上，不論該導熱塊體或該些金屬凸柱是否接觸該載膜，或藉由一黏著劑與該載膜間隔開。 The terms "set on" and "attach to" include contact and non-contact with a single or multiple components. For example, the heat conducting block and the metal studs are attached to the carrier film regardless of whether the heat conducting block or the metal studs contact the carrier film or are separated from the carrier film by an adhesive. .

「電性連接」或「電性耦接」之詞意指直接或間接電性連接。例如，該半導體裝置係藉由凸塊而電性連接至該些接觸墊上，但並未接觸該些接觸墊。 The term "electrical connection" or "electrical coupling" means direct or indirect electrical connection. For example, the semiconductor device is electrically connected to the contact pads by bumps, but does not contact the contact pads.

根據本發明之線路板具有多種優點，該電性隔離件提供了晶片貼附處之熱膨脹係數補償接觸介面，且亦於晶片與電性隔離件下方之防潮蓋之間建立了散熱途徑。樹脂芯層提供了機械性的支撐，並作為導線與防潮蓋之間、以及電性隔離件與金屬凸柱之間的間隔件。防潮蓋密封電性隔離件/金屬凸柱與其周圍之塑料間之介面，並杜絕水氣經由介面上的裂痕滲入。導線提供了該線路板水平的電性路由，而金屬凸柱可提供該線路板 垂直之電性路由。藉由此方法所製備之線路板為可靠的、成本低、且非常適合大量生產。 The circuit board according to the present invention has various advantages in that the thermal isolation member provides a thermal expansion coefficient compensation contact interface at the wafer attachment portion, and also establishes a heat dissipation path between the wafer and the moisture barrier cover under the electrical isolation member. The resin core layer provides mechanical support and acts as a spacer between the wire and the moisture barrier, and between the electrical barrier and the metal stud. The moisture-proof cover seals the interface between the electrical isolation member/metal stud and the plastic around it, and prevents moisture from penetrating through the crack on the interface. The wire provides a horizontal electrical route to the board, and the metal stud provides the board Vertical electrical routing. The circuit board prepared by this method is reliable, low in cost, and is very suitable for mass production.

本發明所提供之至被方法具有高度適用性，且係以獨特、進步之方式結合各種成熟之電性及機械性連接技術。此外，本發明之製備方法不須昂貴的工具即可實施。因此，相較於傳統技術，此製備方法可大幅提升產量、良率、效能、與成本效益。 The method provided by the present invention is highly adaptable and combines various mature electrical and mechanical joining techniques in a unique and progressive manner. Furthermore, the preparation method of the present invention can be carried out without expensive tools. Therefore, compared with the conventional technology, this preparation method can greatly improve the yield, yield, efficiency, and cost effectiveness.

在此所述之實施例係為例示之用，其中該些實施例可能會簡化或省略本技術領域已熟知之元件或步驟，以免模糊本發明之特點。同樣地，為使圖式清晰，圖式亦可能省略重覆或非必要之元件及元件符號。 The embodiments described herein are illustrative, and the elements or steps that are well known in the art may be simplified or omitted in order to avoid obscuring the features of the present invention. Similarly, in order to make the drawings clear, the drawings may also omit redundant or non-essential components and component symbols.

100‧‧‧線路板 100‧‧‧ circuit board

11‧‧‧電性隔離件 11‧‧‧Electrical insulation

111、201、401‧‧‧頂側 111, 201, 401‧‧‧ top side

112、202、402‧‧‧底側 112, 202, 402‧‧‧ bottom side

132‧‧‧頂部金屬膜 132‧‧‧Top metal film

137‧‧‧底部金屬膜 137‧‧‧Bottom metal film

21‧‧‧樹脂芯層 21‧‧‧ resin core layer

212‧‧‧頂部金屬層 212‧‧‧Top metal layer

214‧‧‧貼合膜 214‧‧‧Finished film

215‧‧‧黏著劑 215‧‧‧Adhesive

217‧‧‧底部金屬層 217‧‧‧ bottom metal layer

40‧‧‧金屬凸柱 40‧‧‧Metal studs

51‧‧‧底部披覆層 51‧‧‧ bottom coating

52‧‧‧防潮蓋 52‧‧‧ moisture proof cover

54‧‧‧頂部披覆層 54‧‧‧Top cladding

56‧‧‧導線 56‧‧‧Wire

561‧‧‧接觸墊 561‧‧‧Contact pads

563‧‧‧路由電路 563‧‧‧ Routing Circuit

T1‧‧‧第一厚度 T1‧‧‧first thickness

T2‧‧‧第二厚度 T2‧‧‧second thickness

T3‧‧‧第三厚度 T3‧‧‧ third thickness

Claims (13)

一種內建有晶片接置用導熱塊體以及防潮蓋之線路板製備方法，其步驟包含：提供一導熱塊體，其具有平坦之一頂側及一底側，其中，該導熱塊體包括有一電性隔離件；提供複數個金屬凸柱，其各自具有平坦之一頂側以及一底側；提供一堆疊結構，包括一頂部金屬層、一底部金屬層、設置於該頂部金屬層與該底部金屬層之間之一貼合膜、一第一開口、以及複數個第二開口，其中，該第一開口以及該些第二開口係延伸穿過該頂部金屬層、該貼合膜、以及該底部金屬層，且該頂部金屬層以及該些底部金屬層各自具有一平坦之外表面；將該導熱塊體嵌入該堆疊結構之該第一開口中，以及將該些金屬凸柱嵌入該堆疊結構之該些第二開口中，並於該堆疊結構與該導熱塊體之間、以及於該堆疊結構與該些金屬凸柱之間保留縫隙，接著擠壓並固化該貼合膜以形成一樹脂芯層，該樹脂芯層包括連接至該頂部金屬層之一頂側、以及連接至該底部金屬層之一底側，其中，該堆疊結構係藉由一黏著劑貼附至該導熱塊體及該些金屬凸柱之側壁，且該黏著劑係由該貼合膜擠出，並進入該堆疊結構與該導熱塊體間之該縫隙、及該堆疊結構與該些金屬凸柱間之該縫隙；移除被擠出之該黏著劑之一多餘部分，使得該黏著劑外露之一頂表面及一底表面實質上與該導熱塊體之該頂側及該底側、該頂部金屬層及底部 金屬層之該些外表面、以及該些金屬凸柱之該頂側及該底側共平面；形成複數導線，包括複數個接觸墊以及複數路由電路，其中，該些接觸墊係於該電性隔離件之一頂側上側向延伸，以及該些路由電路係由該些接觸墊側向延伸於該樹脂芯層上，並電性連接該些接觸墊以及該些金屬凸柱；以及形成複數個防潮蓋，自該電性隔離件之一底側側向延伸至該底部金屬層，並自該些金屬凸柱之該底側側向延伸至該底部金屬層，以完全覆蓋該黏著劑外露之該底表面。 A method for manufacturing a circuit board having a heat-conducting block for wafer connection and a moisture-proof cover, the method comprising: providing a heat-conducting block having a flat top side and a bottom side, wherein the heat-conducting block includes An electrical spacer; providing a plurality of metal studs each having a flat top side and a bottom side; providing a stack structure including a top metal layer, a bottom metal layer, and a top metal layer and the bottom portion a film, a first opening, and a plurality of second openings between the metal layers, wherein the first opening and the second openings extend through the top metal layer, the bonding film, and the a bottom metal layer, and the top metal layer and the bottom metal layers each have a flat outer surface; the thermally conductive bulk is embedded in the first opening of the stacked structure, and the metal studs are embedded in the stacked structure And forming a gap between the stack structure and the heat conducting block, and between the stack structure and the metal studs, and then pressing and curing the bonding film to form a resin core layer comprising a top side connected to one of the top metal layers and a bottom side connected to the bottom metal layer, wherein the stacked structure is attached to the heat conductive block by an adhesive And the sidewalls of the metal studs, and the adhesive is extruded from the bonding film, and enters the gap between the stack structure and the heat conducting block, and between the stack structure and the metal studs a gap; removing an excess portion of the adhesive that is extruded, such that a top surface and a bottom surface of the adhesive are substantially opposite to the top side and the bottom side of the thermally conductive block, the top metal layer And bottom The outer surfaces of the metal layer, and the top side and the bottom side of the metal studs are coplanar; forming a plurality of wires, including a plurality of contact pads and a plurality of routing circuits, wherein the contact pads are electrically connected One side of the spacer extends laterally, and the routing circuits extend laterally from the contact pads to the resin core layer, and electrically connect the contact pads and the metal studs; and form a plurality of a moisture-proof cover extending laterally from a bottom side of the electrical isolation member to the bottom metal layer and extending laterally from the bottom side of the metal studs to the bottom metal layer to completely cover the adhesive exposed The bottom surface. 如申請專利範圍第1項所述之製備方法，其中，該黏著層外露之該頂表面及該底表面實質上與該電性隔離件之該頂側及該底側、該頂部金屬層及該底部金屬層之該些外表面、以及該些金屬凸柱之該頂側及該底側共平面。 The preparation method of claim 1, wherein the top surface and the bottom surface exposed by the adhesive layer are substantially opposite to the top side and the bottom side of the electrical isolation member, the top metal layer, and the The outer surfaces of the bottom metal layer, and the top side and the bottom side of the metal studs are coplanar. 如申請專利範圍第2項所述之製備方法，其中，該些防潮蓋為金屬層，且該些防潮蓋之選定部分係藉由薄膜濺鍍後，接著進行電解電鍍而形成，該些防潮蓋於接觸被擠出之該黏著劑及接觸該電性隔離件處分別具有0.5至50微米之厚度。 The preparation method of claim 2, wherein the moisture-proof covers are metal layers, and the selected portions of the moisture-proof covers are formed by sputtering of a film, followed by electrolytic plating, and the moisture-proof covers are formed. The adhesive is exposed to contact and is in contact with the electrical separator to have a thickness of 0.5 to 50 μm, respectively. 如申請專利範圍第1項所述之製備方法，其中，該導熱塊體包括該電性隔離件、一頂部金屬膜、以及一底部金屬膜，該頂部金屬膜及該底部金屬膜係分別沉積於該電性隔離件之該底側及該底側上，且該頂部金屬膜及該底部金屬膜各自具有一平坦之外表面，而該黏著層外露之該頂表面及該底 表面實質上與該頂部金屬膜及該底部金屬膜之該些外表面、該頂部金屬層及該底部金屬層之該些外表面、以及該些金屬凸柱之該頂側及該底側共平面。 The method of claim 1, wherein the thermally conductive block comprises the electrical isolation member, a top metal film, and a bottom metal film, wherein the top metal film and the bottom metal film are respectively deposited The bottom side and the bottom side of the electrical isolation member, and the top metal film and the bottom metal film each have a flat outer surface, and the top surface and the bottom of the adhesive layer are exposed The surface is substantially coplanar with the outer surface of the top metal film and the bottom metal film, the outer surfaces of the top metal layer and the bottom metal layer, and the top side and the bottom side of the metal studs . 如申請專利範圍第4項所述之製備方法，其中，該些防潮蓋為金屬層，且該些防潮蓋之選定部分係藉由無電電鍍後，接著進行電解電鍍而形成，該些防潮蓋於接觸被擠出之該黏著劑處具有0.5至50微米之厚度。 The preparation method of claim 4, wherein the moisture-proof covers are metal layers, and the selected portions of the moisture-proof covers are formed by electroless plating followed by electrolytic plating, and the moisture-proof covers are The adhesive is exposed to have a thickness of 0.5 to 50 μm. 一種內建有電性隔離件以及防潮蓋之線路板製備方法，其步驟包含：提供一電性隔離件，其具有平坦之一頂側及一底側；提供一堆疊結構，包括一頂部金屬層、一底部金屬層、設置於該頂部金屬層與該底部金屬層之間之一貼合膜、以及一開口，其中，該開口係延伸穿過該頂部金屬層、該貼合膜、以及該底部金屬層，且該頂部金屬層以及該些底部金屬層各自具有一平坦之外表面；將該電性隔離件嵌入該堆疊結構之該開口中，並於該堆疊結構與該電性隔離件之間保留縫隙，接著擠壓並固化該貼合膜以形成一樹脂芯層，該樹脂芯層具有連接至該頂部金屬層之一頂側、以及連接至該底部金屬層之一底側，其中，該堆疊結構係藉由一黏著劑貼附至該電性隔離件之側壁，且該黏著劑係由該貼合膜擠出，並進入該堆疊結構與該電性隔離件間之該縫隙；移除被擠出之該黏著劑之一多餘部分，使得該黏著劑外露之一頂表面及一底表面實質上與該電性隔離件之該頂側及該底側、以及該頂部金屬層 及底部金屬層之該些外表面共平面；形成複數導線，包括複數個接觸墊以及複數路由電路，其中，該些接觸墊係於該電性隔離件之該頂側上側向延伸，以及該些路由電路係由該些接觸墊側向延伸於該樹脂芯層上；以及形成一防潮蓋，自該電性隔離件之該底側側向延伸至該底部金屬層，以完全覆蓋該黏著劑外露之該底表面。 A method for preparing a circuit board with an electrical isolation member and a moisture-proof cover, the method comprising: providing an electrical isolation member having a flat top side and a bottom side; providing a stack structure including a top metal layer a bottom metal layer, a film disposed between the top metal layer and the bottom metal layer, and an opening, wherein the opening extends through the top metal layer, the bonding film, and the bottom a metal layer, and the top metal layer and the bottom metal layers each have a flat outer surface; the electrical isolation member is embedded in the opening of the stacked structure, and between the stacked structure and the electrical isolation member Retaining the gap, and then pressing and curing the bonding film to form a resin core layer having a top side connected to one of the top metal layers and a bottom side connected to the bottom metal layer, wherein The stacked structure is attached to the sidewall of the electrical isolation member by an adhesive, and the adhesive is extruded from the bonding film and enters the gap between the stacked structure and the electrical isolation member; Extrusion One of the excess adhesive portion, so that the top one of the exposed adhesive surface and a bottom surface of the top side of the substantially electrically isolated from the member and said bottom side, the top metal layer and And the outer surfaces of the bottom metal layer are coplanar; forming a plurality of wires, including a plurality of contact pads and a plurality of routing circuits, wherein the contact pads extend laterally on the top side of the electrical isolation member, and a routing circuit extending laterally from the contact pads to the resin core layer; and forming a moisture barrier cover extending laterally from the bottom side of the electrical isolation member to the bottom metal layer to completely cover the adhesive exposure The bottom surface. 如申請專利範圍第6項所述之製備方法，其中，該防潮蓋為金屬層，且該些防潮蓋之選定部分係藉由薄膜濺鍍後，接著進行電解電鍍而形成，且於接觸被擠出之該黏著劑及該電性隔離件處具有0.5至50微米之厚度。 The preparation method of claim 6, wherein the moisture-proof cover is a metal layer, and the selected portions of the moisture-proof covers are formed by sputtering of a film, followed by electrolytic plating, and are squeezed in contact. The adhesive and the electrical separator have a thickness of 0.5 to 50 microns. 一種內建有電性隔離件以及防潮蓋之線路板製備方法，其步驟包含：貼附一電性隔離件以及複數個金屬凸柱於一載膜上，其中，該電性隔離件係具有平坦之一頂側以及一底側，以及該些金屬凸柱各自具有平坦之一頂側以及一底側；形成一埋封塑料以覆蓋該電性隔離件、該些金屬凸柱、以及該載膜；移除一部分之該埋封塑料以形成一樹脂芯層，該樹脂芯層之一頂面實質上與該電性隔離件之該頂側以及該些金屬凸柱之該頂側共平面，並移除該載膜；形成複數導線，該些導線係包括複數個接觸墊以及複數路由電路，其中，該些接觸墊係於該電性隔離件之該頂側上側向延伸，且該些路由電路係由該些接觸墊側向延伸於該樹脂芯層上，並電性連接該些接觸墊以及該 些金屬凸柱；以及形成複數個防潮蓋，該些防潮蓋係自該電性隔離件與該些金屬凸柱之該些底側，完全覆蓋該電性隔離件與該樹脂芯層之間之介面、以及該些金屬凸柱與該樹脂芯層之間之介面。 A method for preparing a circuit board with an electrical isolation member and a moisture-proof cover, the method comprising: attaching an electrical isolation member and a plurality of metal protrusions on a carrier film, wherein the electrical isolation member has a flatness a top side and a bottom side, and the metal studs each having a flat top side and a bottom side; forming a buried plastic to cover the electrical spacer, the metal studs, and the carrier film Removing a portion of the embedding plastic to form a resin core layer, a top surface of the resin core layer being substantially coplanar with the top side of the electrical isolation member and the top side of the metal studs, and Removing the carrier film; forming a plurality of wires, the plurality of wires comprising a plurality of contact pads and a plurality of routing circuits, wherein the contact pads extend laterally on the top side of the electrical isolation member, and the routing circuits Extending the contact pads laterally on the resin core layer and electrically connecting the contact pads and the And a plurality of moisture-proof covers, the moisture-proof covers are from the bottom sides of the electrical isolation member and the metal protrusions, completely covering the electrical isolation member and the resin core layer The interface, and the interface between the metal studs and the resin core layer. 如申請專利範圍第8項所述之製備方法，其中，該些防潮蓋為金屬層，且該些防潮蓋係藉由薄膜濺鍍後，接著進行電解電鍍而形成，其各自具有0.5至50微米之厚度。 The preparation method of claim 8, wherein the moisture-proof covers are metal layers, and the moisture-proof covers are formed by sputtering of a film, followed by electrolytic plating, each having a thickness of 0.5 to 50 μm. The thickness. 一種半導體組體，包含：一線路板，包括：一電性隔離件，具有平坦之一頂側以及一底側；一樹脂芯層，覆蓋且圍繞該電性隔離件之側壁；一黏著劑，介於該電性隔離件與該樹脂芯層之間；一防潮蓋，完全覆蓋該黏著劑之一底表面，且於接觸該黏著劑處具有一第一厚度，於接觸該電性隔離件處具有一第二厚度，及於接觸該樹脂芯層處具有一第三厚度，其中該第二厚度實質上相等於該第一厚度，而該第三厚度係大於該第一厚度及該第二厚度；以及複數導線，包括複數個接觸墊以及複數路由電路，且於接觸該黏著劑處具有一第四厚度，於接觸該電性隔離件處具有一第五厚度，及於接觸該樹脂芯層處具有一第六厚度，該第五厚度實質上相等於該第四厚度，而該第六厚度係大於該第四厚度及該第五厚度，其中，該些接觸墊係於該電 性隔離件之該頂側上側向延伸，以及該些路由電路係由該些接觸墊側向延伸於該樹脂芯層上；以及一半導體裝置，設置且電性連接至該些接觸墊。 A semiconductor package comprising: a circuit board comprising: an electrical spacer having a flat top side and a bottom side; a resin core layer covering and surrounding the sidewall of the electrical spacer; an adhesive, Between the electrical isolation member and the resin core layer; a moisture-proof cover completely covering one of the bottom surfaces of the adhesive, and having a first thickness in contact with the adhesive, contacting the electrical isolation member Having a second thickness and having a third thickness in contact with the resin core layer, wherein the second thickness is substantially equal to the first thickness, and the third thickness is greater than the first thickness and the second thickness And a plurality of wires, including a plurality of contact pads and a plurality of routing circuits, and having a fourth thickness in contact with the adhesive, a fifth thickness in contact with the electrical spacer, and contact with the resin core layer Having a sixth thickness, the fifth thickness is substantially equal to the fourth thickness, and the sixth thickness is greater than the fourth thickness and the fifth thickness, wherein the contact pads are tied to the electricity The top side of the spacer is laterally extended, and the routing circuits are laterally extended from the resin core layer by the contact pads; and a semiconductor device is disposed and electrically connected to the contact pads. 如申請專利範圍第10項所述之半導體組體，其中，該防潮蓋為金屬層，且該第一厚度及該第二厚度係於0.5至50微米之範圍內。 The semiconductor package of claim 10, wherein the moisture barrier is a metal layer, and the first thickness and the second thickness are in the range of 0.5 to 50 micrometers. 一種半導體組體，包含：一線路板，包括：一電性隔離件，具有平坦之一頂側以及一底側；複數個金屬凸柱，具有平坦之一頂側以及一底側；一樹脂芯層，覆蓋且圍繞該電性隔離件以及該些金屬凸柱之側壁；一黏著劑，介於該電性隔離件與該樹脂芯層之間、以及於該些金屬凸柱與該樹脂芯層之間，且該些金屬凸柱與該電性隔離件間係藉由該黏著劑及該樹脂芯層而相互間隔；複數個防潮蓋，完全覆蓋該黏著劑之一底表面；以及複數導線，包括複數個接觸墊以及複數路由電路，其中，該些接觸墊係於該電性隔離件之該頂側上側向延伸，以及該些路由電路係由該些接觸墊側向延伸於該樹脂芯層上，並電性連接該些接觸墊以及該些金屬凸柱；以及一半導體裝置，設置且電性連接至該些接觸墊。 A semiconductor package comprising: a circuit board comprising: an electrical isolation member having a flat top side and a bottom side; a plurality of metal studs having a flat top side and a bottom side; a resin core a layer covering and surrounding the electrical isolation member and sidewalls of the metal studs; an adhesive interposed between the electrical isolation member and the resin core layer; and the metal studs and the resin core layer Between the metal studs and the electrical spacers being separated from each other by the adhesive and the resin core layer; a plurality of moisture-proof covers completely covering one of the bottom surfaces of the adhesive; and a plurality of wires, The method includes a plurality of contact pads and a plurality of routing circuits, wherein the contact pads extend laterally on the top side of the electrical isolation member, and the routing circuits extend laterally from the contact pads to the resin core layer And electrically connecting the contact pads and the metal studs; and a semiconductor device disposed and electrically connected to the contact pads. 如申請專利範圍第12項所述之半導體組體，其中，該些防潮蓋為金屬 層，且該些防潮蓋於接觸該黏著劑處，係各自具有0.5至50微米之厚度。 The semiconductor package of claim 12, wherein the moisture-proof covers are metal The layers, and the moisture-proof covers are in contact with the adhesive, each having a thickness of 0.5 to 50 microns.
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