TWI607198B - Three-dimensional measuring device - Google Patents
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- TWI607198B TWI607198B TW105107856A TW105107856A TWI607198B TW I607198 B TWI607198 B TW I607198B TW 105107856 A TW105107856 A TW 105107856A TW 105107856 A TW105107856 A TW 105107856A TW I607198 B TWI607198 B TW I607198B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
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Description
本發明係有關一種利用移相法進行三維測量之三維測量裝置。 The present invention relates to a three-dimensional measuring apparatus for performing three-dimensional measurement using a phase shifting method.
一般,在印刷基板上構裝電子零件的情況,首先於印刷基板上所配設之既定的電極圖案上印刷銲膏。接著,藉該銲膏的黏性使電子零件暫時固定在印刷基板上。之後,前述印刷基板被導引到回銲爐,經過既定的回銲工程以進行銲接。近來,於被導引到回銲爐的前階段有必要檢查銲膏的印刷狀態,進行如此的檢查時有時使用三維測量裝置。 Generally, in the case where an electronic component is mounted on a printed substrate, solder paste is first printed on a predetermined electrode pattern disposed on the printed substrate. Then, the electronic component is temporarily fixed on the printed substrate by the adhesiveness of the solder paste. Thereafter, the printed substrate is guided to a reflow oven and subjected to a predetermined reflow process for soldering. Recently, it is necessary to check the printing state of the solder paste before being guided to the reflow furnace, and a three-dimensional measuring device is sometimes used for such inspection.
近年來,提案有使用光的所謂非接觸式的三維測量裝置,例如提案一種有關使用移相法的三維測量裝置之技術。 In recent years, there has been proposed a so-called non-contact three-dimensional measuring device using light, and for example, a technique relating to a three-dimensional measuring device using a phase shifting method has been proposed.
在使用該移相法的三維測量裝置中,透過由發出既定的光之光源與將來自該光源的光轉換成具有正弦波狀(條紋狀)的光強度分布之光圖案的格柵之組合所構成的照射手段,將光圖案照射於印刷基板(被測量物)。接著,將基板上的點使用配置在正上的拍攝手段作觀測。在拍攝手段方面,使用由透鏡及拍攝元件等構成之 CCD相機等。 In a three-dimensional measuring apparatus using the phase shifting method, a combination of a light source that emits a predetermined light source and a light pattern that converts light from the light source into a light intensity distribution having a sinusoidal shape (striped shape) is used. The irradiation means is configured to irradiate the light pattern on the printed substrate (measured object). Next, the dots on the substrate are observed using a photographing means disposed on the front side. In terms of shooting means, the lens and the imaging element are used. CCD camera, etc.
在上述構成下,藉拍攝手段所拍攝的影像資料上的各畫素之光強度(輝度)I係依下式(U1)求得。 In the above configuration, the light intensity (luminance) I of each pixel on the image data captured by the photographing means is obtained by the following formula (U1).
此處,藉由移送或切換控制上述格柵,使光圖案的相位例如4階段(+0,+90°,+180°,+270°)地變化,取入具有與此等對應的強度分布I0、I1、I2、I3之影像資料,依據下述式(U2)刪除f(增益)和e(偏移量),求出相位。 Here, by controlling the above-described grid by transfer or switching, the phase of the light pattern is, for example, four stages ( +0, +90°, +180°, +270°), the image data having the intensity distributions I 0 , I 1 , I 2 , and I 3 corresponding thereto are taken, and f (gain) and e (offset) are deleted according to the following formula (U2) ), find the phase .
對此,近年,亦提案一種取代上述的4次拍攝方式,改為使光圖案的相位3階段地變化,從3種的影像資料取得相位之3次拍攝方式(例如,參照專利文獻2)。 In recent years, in recent years, it has been proposed to replace the above-mentioned four-time shooting mode, and to change the phase of the light pattern in three stages, and to obtain the phase from the three types of image data. The third shooting method (for example, refer to Patent Document 2).
[專利文獻1]特開平5-280945號公報 [Patent Document 1] Japanese Patent Publication No. 5-280945
[專利文獻2]特開2002-81924號公報 [Patent Document 2] JP-A-2002-81924
然而,4次拍攝方式因為依據更多的影像資料進行測量,所以能進行高精度的測量,但在測量(特別是 影像資料之取得等)上耗費時間。相反地,3次拍攝方式有測量時間變短,另一方面針對較小尺寸的銲膏(測量對象)亦有測量精度不足的情況。 However, since the 4 shots are measured based on more image data, high-precision measurement can be performed, but in measurement (especially It takes time to obtain image data. Conversely, the measurement method has a shorter measurement time for the three shots, and the measurement accuracy for the smaller size solder paste (measurement object) is also insufficient.
因此,在含有需高精度測量之較小尺寸的銲膏之印刷基板的檢查等中,在測量上要更多的時間。 Therefore, in the inspection of a printed circuit board containing a solder paste of a small size which requires high-precision measurement, it takes more time to measure.
例如,在假設針對既定的測量區域(拍攝區域),花費在1次的拍攝之時間分別為[10msec],花費在1次的格柵的切換等之時間分別為[20msec]之情況,截至既定的測量區域之全部的拍攝處理(最後的拍攝處理)結束為止所需的時間為,於4次拍攝方式的情況,如圖8(a)所示,成為〔拍攝處理所需的時間[10ms]×4次〕+〔格柵之切換等所需的時間[20ms]×3次〕=合計[100msec]。另一方面,於3次拍攝方式的情況,如圖8(b)所示,成為〔拍攝處理所需的時間[10ms]×3次〕+〔格柵之切換等所需的時間[20ms]×2次〕=合計[70msec]。 For example, it is assumed that for a predetermined measurement area (photographing area), the time taken for one shot is [10 msec], and the time for switching the grid for one time is [20 msec], respectively. The time required for the completion of the imaging processing (the last imaging processing) of all the measurement areas is as follows: as shown in Fig. 8 (a), the time required for the imaging processing [10 ms] ×4 times] + [Time required for switching of the grid [20 ms] × 3 times] = total [100 msec]. On the other hand, in the case of the three-shot mode, as shown in FIG. 8(b), it becomes [time required for imaging processing [10 ms] × 3 times] + [time required for switching of the grid [20 ms] ×2 times] = total [70 msec].
當然,在一片印刷基板上設定多個測量區域那樣的情況,該一片印刷基板之測量所需的時間分別成為其數倍。 Of course, when a plurality of measurement areas are set on one printed circuit board, the time required for measurement of the one printed circuit board is several times.
此外,上述課題未必限定於被印刷於印刷基板上之銲膏等的高度測量,亦包含其他三維測量裝置的領域。 Further, the above-described problems are not necessarily limited to the height measurement of the solder paste or the like printed on the printed circuit board, and include the field of other three-dimensional measuring devices.
本發明係有鑒於上述情事而成者,其目的在提供一種在利用移相法進行三維測量時,可謀求維持必要的測量精度並提升測量速度之三維測量裝置。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a three-dimensional measuring apparatus capable of maintaining a required measurement accuracy and improving a measurement speed when three-dimensional measurement is performed by a phase shift method.
以下,針對適合於解決上述課題之各手段分項作說明。此外,因應需要在對應的手段上附記特有之作用效果。 Hereinafter, each means suitable for solving the above problems will be described in detail. In addition, due to the need to attach a special effect on the corresponding means.
手段1.一種三維測量裝置,其特徴為具備:照射手段,可對被測量物(例如印刷基板等)照射具有條紋狀的光強度分布之光圖案;拍攝手段,可拍攝經照射了前述光圖案的前述被測量物上之既定的測量區域(測量區域);影像取得手段,建構成:控制前述照射手段及前述拍攝手段,使前述光圖案的相位作複數種變化,可取得在該各光圖案之下所分別拍攝之前述測量區域的複數種的影像(影像資料),並可將針對前述測量區域應取得(拍攝)之影像數因應前述測量區域作變更;及影像處理手段,可依據藉前述影像取得手段所取得之影像,利用移相法針對前述測量區域內之測量對象(例如銲膏等)執行三維測量,前述影像取得手段為,在前述測量區域內含有滿足既定的判定條件之前述測量對象的情況,取得以第1既定數種(例如4種)的相位照射、拍攝光圖案所得之前述第1既定數種的影像,在前述測量區域內未含有滿足前述判定條件之前述測量對象的情況,取得以少於前述第1既定數之第2既定數種(例如3種)的相位照射、拍攝光圖案所得之前述第2既定數種的影像。 Means 1. A three-dimensional measuring apparatus comprising: an irradiation means for irradiating a light object having a stripe-shaped light intensity distribution on a workpiece (for example, a printed board); and an image capturing means capable of photographing and irradiating the light pattern a predetermined measurement area (measurement area) on the object to be measured; and an image acquisition means configured to control the irradiation means and the imaging means to change a phase of the light pattern in plural, and obtain the light pattern in the light pattern The plurality of images (image data) of the aforementioned measurement area are respectively photographed, and the number of images to be acquired (photographed) for the measurement area may be changed according to the measurement area; and the image processing means may be based on the foregoing The image obtained by the image acquisition means performs three-dimensional measurement on the measurement target (for example, solder paste or the like) in the measurement area by the phase shift method, and the image acquisition means includes the measurement that satisfies the predetermined determination condition in the measurement area. In the case of the object, the first predetermined number (for example, four types) of phase irradiation and the photographing of the light pattern are obtained. In the case where the measurement target region that does not satisfy the above-described determination condition is not included in the measurement area, the second predetermined number (for example, three types) of the first predetermined number (for example, three types) are acquired and photographed. The second predetermined number of images obtained by the light pattern.
一般,在藉由三維測量裝置進行測量的印刷 基板上印刷有大小相異的各種銲膏,其種類、配置係依各測量區域而有多樣。亦即,就算是含有需高精度測量的較小尺寸的銲膏之印刷基板,還是有存在無需高精度測量的測量區域之情形。 Generally, printing is performed by a three-dimensional measuring device Various types of solder pastes having different sizes are printed on the substrate, and the types and arrangements thereof vary depending on the measurement areas. That is, even in the case of a printed substrate containing a solder paste of a small size requiring high-precision measurement, there is a case where a measurement area which does not require high-precision measurement exists.
儘管如此,習知技術係針對設定於印刷基板上之全部的測量區域,利用預先設定的同一測量方式(例如在進行高精度測量之情況利用4次移相方式,在測量精度無需那種程度而以更短時間進行測量之情況利用3次移相方式)統一地進行測量。 However, the conventional technique utilizes the same measurement method set in advance on all the measurement areas set on the printed substrate (for example, in the case of performing high-precision measurement, the phase shifting method is used four times, and the measurement accuracy is not required to the extent When the measurement is performed in a shorter time, the measurement is performed uniformly using the three-phase phase shift method.
對此,依據上述手段1,針對含有滿足既定的判定條件(例如大小是小於既定值)的測量對象之測量區域,依據第1既定數種(例如4種)的影像更高精度地執行三維測量,另一方面,針對其以外的測量區域,能依據少於前述第1既定數之第2既定數種(例如3種)的影像以更短時間執行三維測量。 On the other hand, according to the above-described means 1, the measurement area including the measurement target that satisfies the predetermined determination condition (for example, the size is smaller than the predetermined value) performs the three-dimensional measurement with higher precision according to the first predetermined number (for example, four types) of the image. On the other hand, for the measurement area other than the measurement area, the three-dimensional measurement can be performed in a shorter time based on the second predetermined number (for example, three types) of images smaller than the first predetermined number.
結果,在利用移相法進行三維測量時,可謀求維持滿足既定的判定條件的測量對象(需高精度測量之測量對象)必要的測量精度並提升測量速度。 As a result, when the three-dimensional measurement is performed by the phase shift method, it is possible to maintain the measurement accuracy necessary for the measurement target (measurement object to be measured with high accuracy) that satisfies the predetermined determination condition and to increase the measurement speed.
此外,上述「既定的判定條件」包含有測量對象的大小是小於既定值(例如「面積」、「體積」、「周圍長」或「短邊長」是小於既定值)或測量對象是屬於既定的屬性者(例如對成為測量對象的銲膏構裝之零件的品種是既定的品種)等。此外,測量區域內是否含有滿足既定的判定條件的測量對象之判定,可依據既定的記憶手段所預先記憶之被測量物的設計資料[封面(cover) 資料等]來進行。 Further, the above-mentioned "established determination condition" includes that the size of the measurement target is smaller than a predetermined value (for example, "area", "volume", "peripheral length" or "short side length" is less than a predetermined value) or the measurement object belongs to the predetermined value. The attribute attribute (for example, the type of the part to be solder paste to be measured is a predetermined type). In addition, whether or not the measurement area contains a measurement target that satisfies a predetermined determination condition, and the design information of the object to be measured that is previously memorized according to a predetermined memory means [cover] Information, etc.] to proceed.
手段2.如手段1記載之三維測量裝置,其中在前述影像取得手段取得前述第1既定數種(例如4種)的影像之情況,前述影像處理手段為,針對前述測量區域內之滿足前述判定條件的前述測量對象,依據前述第1既定數種的影像,利用移相法進行三維測量,針對前述測量區域內未滿足前述判定條件的測量對象,依據前述第2既定數種(例如3種)的影像,藉由移相法進行三維測量。 The apparatus according to the first aspect of the invention, wherein the image acquisition means acquires the first predetermined number (for example, four types) of images, wherein the image processing means satisfies the determination in the measurement area The measurement target of the condition is three-dimensionally measured by the phase shift method based on the first predetermined number of images, and the measurement target that does not satisfy the determination condition in the measurement region is based on the second predetermined number (for example, three types). The image is measured by phase shifting in three dimensions.
依據上述手段2,針對未滿足既定的判定條件的測量對象(測量精度無需那樣程度之測量對象),可依據更少影像以短時間進行三維測量。結果,可謀求更提升測量速度。 According to the above-described means 2, for a measurement object that does not satisfy the predetermined determination condition (the measurement accuracy does not require such a measurement object), the three-dimensional measurement can be performed in a short time based on fewer images. As a result, it is possible to further increase the measurement speed.
又,亦可將在取得第1既定數種(例如4種)的影像之情況中針對「未滿足既定的判定條件的測量對象」之測量精度、和在依據以第2既定數種(例如3種)的相位照射且拍攝光圖案所得之第2既定數種的影像進行三維測量之情況中針對「未滿足既定的判定條件的測量對象」之測量精度設為同等。 In addition, in the case of acquiring the image of the first predetermined number (for example, four types), the measurement accuracy of the "measurement target that does not satisfy the predetermined determination condition" and the second predetermined number (for example, 3) may be used. The measurement accuracy of the "measurement target that does not satisfy the predetermined determination condition" is equal in the case where the second predetermined number of images obtained by the phase illumination and the photographing of the light pattern are three-dimensionally measured.
手段3.如手段1或2所記載之三維測量裝置,其中具備依據外部操作可設定前述判定條件之條件設定手段。 The three-dimensional measuring apparatus according to the means 1 or 2, wherein the condition setting means capable of setting the determination condition in accordance with an external operation is provided.
依據上述手段3,可任意地設定既定的判定條 件,可謀求提升便利性及泛用性。 According to the above means 3, the predetermined decision bar can be arbitrarily set It can be used to improve convenience and versatility.
手段4.如手段3所記載之三維測量裝置,其中具備預定時間顯示手段,其可顯示在藉由前述條件設定手段所設定的前述判定條件之下花費在前述被測量物的測量之預定時間。 The three-dimensional measuring apparatus according to the third aspect, comprising a predetermined time display means for displaying a predetermined time spent on the measurement of the object to be measured under the determination condition set by the condition setting means.
依據上述手段4,無需為了找出滿足作業者要求的測量時間、測量精度之最佳判定條件而事先使三維測量裝置實際運轉多次。結果,可謀求提升便利性。 According to the above-described means 4, it is not necessary to actually operate the three-dimensional measuring device a plurality of times in advance in order to find an optimum determination condition that satisfies the measurement time and measurement accuracy required by the operator. As a result, convenience can be improved.
手段5.如手段1至4中任一手段所記載之三維測量裝置,其中前述影像取得手段為,在前述測量區域內含有滿足前述判定條件之前述測量對象的情況,取得以前述第1既定數種是4種或3種的相位照射、拍攝光圖案所得之4種或3種的影像,在前述測量區域內未含有滿足前述判定條件之前述測量對象的情況,取得以前述第2既定數種是2種的相位照射、拍攝光圖案所得之2種的影像。 The three-dimensional measuring apparatus according to any one of the above-mentioned means, wherein the image capturing means includes the first predetermined number in the measurement region including the measurement target that satisfies the determination condition. Four or three types of images obtained by phase irradiation and photographing of a light pattern, and the measurement target that satisfies the above-described determination condition is not included in the measurement region, and the second predetermined number is obtained. There are two types of images obtained by phase irradiation and photographing of light patterns.
依據上述手段5,針對未滿足既定的判定條件的測量對象(測量精度無需那樣程度之測量對象),可依據更少影像以短時間進行三維測量。結果,可謀求更提升測量速度。 According to the above-described means 5, for a measurement object that does not satisfy the predetermined determination condition (the measurement accuracy does not require such a measurement object), the three-dimensional measurement can be performed in a short time based on fewer images. As a result, it is possible to further increase the measurement speed.
手段6.如手段1至4中任一手段所記載之三維測量裝置,其中前述影像取得手段為,在前述測量區域內含有滿足前述判定條件中特定條件的前述測量對象之情況,取得以作為前述第1既定數種之4種的相位照射、拍攝光圖案所得之4種的影像, 在前述測量區域內含有滿足前述判定條件的前述測量對象但未含有滿足前述特定條件的前述測量對象之情況,取得以作為前述第1既定數種之3種的相位照射、拍攝光圖案所得之3種的影像,在前述測量區域內未含有滿足前述判定條件的前述測量對象之情況,取得以作為前述第2既定數種之2種的相位照射、拍攝光圖案所得之2種的影像。 The three-dimensional measuring device according to any one of the above-mentioned means, wherein the image capturing means includes the measurement target that satisfies a specific condition among the determination conditions in the measurement region, and obtains the Four kinds of images of the first four types of phase irradiation and four types of images obtained by photographing light patterns, When the measurement target that satisfies the above-described determination condition is included in the measurement region, but the measurement target that satisfies the specific condition is not included, three types of phase illumination and photographing light patterns are obtained as the first predetermined number. In the case where the measurement target that satisfies the above-described determination condition is not included in the measurement region, two kinds of images obtained by the phase illumination and the photographing light pattern of the second predetermined number are obtained.
依據上述手段6,除了上述手段5的作用效果以外,能更精細地對應測量對象之差異,可更提升測量速度。 According to the above-described means 6, in addition to the effects of the above-described means 5, the difference in the measurement object can be more finely matched, and the measurement speed can be further improved.
再者,於上述手段2之構成下的手段6中,若設為「於前述影像取得手段取得4種的影像之情況中,前述影像處理手段為,針對前述測量區域內滿足前述特定條件之前述測量對象,依據4種的影像,利用移相法進行三維測量,針對前述測量區域內未滿足前述特定條件且滿足前述判定條件的前述測量對象,依據3種的影像,利用移相法進行三維測量,針對前述測量區域內未滿足前述判定條件的測量對象,依據2種的影像,利用移相法進行三維測量,於前述影像取得手段取得3種的影像之情況中,前述影像處理手段為,針對前述測量區域內滿足前述判定條件之前述測量對象,依據3種的影像,利用移相法進行三維測量, 針對前述測量區域內未滿足前述判定條件的測量對象,依據2種的影像,利用移相法進行三維測量」,則可更提升測量精度。 Further, in the means 6 of the above-described means 2, in the case where the image acquisition means acquires four kinds of images, the image processing means is configured to satisfy the specific condition in the measurement region. The measurement object is subjected to three-dimensional measurement by the phase shift method according to the four types of images, and the three-dimensional measurement is performed by the phase shift method based on the three kinds of images for the measurement object that does not satisfy the specific condition and satisfies the above-described determination condition in the measurement region. For the measurement target that does not satisfy the above-described determination condition in the measurement area, the three-dimensional measurement is performed by the phase shift method based on the two types of images, and in the case where the image acquisition means acquires three types of images, the image processing means is The measurement object that satisfies the above-described determination condition in the measurement region is subjected to three-dimensional measurement by a phase shift method according to three kinds of images. In the case where the measurement target that does not satisfy the above-described determination condition in the measurement region is subjected to three-dimensional measurement by the phase shift method based on the two kinds of images, the measurement accuracy can be further improved.
手段7.如手段5或6所記載之三維測量裝置,其中前述影像處理手段係藉由利用藉既定的拍攝條件所決定之增益及偏移量的關係、與由前述影像上之各畫素的輝度值所決定之該畫素的增益或偏移量的值,可依據2種的影像執行利用移相法之三維測量。 The method of claim 3, wherein the image processing means uses a relationship between a gain and an offset determined by a predetermined imaging condition and a pixel on the image. The value of the gain or offset of the pixel determined by the luminance value can be three-dimensionally measured by the phase shift method according to the two types of images.
依據上述手段7,藉由利用藉既定的拍攝條件所決定之增益A及偏移量B的關係〔例如A=K(比例常數)×B〕、與由影像上之各畫素(x,y)的輝度值V(x,y)所決定之該畫素(x,y)的增益A(x,y)或偏移量B(x,y)的值,可依據2種的影像利用移相法進行三維測量。 According to the above means 7, by using the relationship between the gain A and the offset B determined by the predetermined shooting conditions (for example, A = K (proportional constant) × B), and each pixel on the image (x, y) The value of the gain A(x, y) or the offset B(x, y) of the pixel (x, y) determined by the luminance value V(x, y) can be shifted according to the two types of images. The phase method performs three-dimensional measurement.
因此,與需要4種或3種的影像之習知技術相較下,可飛躍地縮短測量時間。 Therefore, compared with the conventional technique that requires four or three types of images, the measurement time can be dramatically shortened.
通常,上述「照射手段」係具有發出既定的光之光源及將源自該光源的光轉換成具有條紋狀的光強度分布的光圖案之格柵,且建構成可對被測量物照射該光圖案。 In general, the "illumination means" has a light source that emits a predetermined light source and a light pattern that converts light from the light source into a light intensity distribution having a stripe shape, and is configured to illuminate the object to be measured. pattern.
此外,從光源照射的光係首先在通過格柵之際被衰減,接著在被測量物(測量對象)反射之際被衰減,最後於拍攝手段進行A/D轉換(類比-數位轉換)之際被衰減後,被取得作為影像的各畫素之輝度值。 Further, the light system irradiated from the light source is first attenuated while passing through the grid, and then attenuated while being reflected by the object to be measured (measured object), and finally A/D conversion (analog-digital conversion) is performed by the photographing means. After being attenuated, the luminance value of each pixel as the image is obtained.
因此,藉拍攝手段所拍攝的影像的各畫素之輝度值,係可藉由將光源的亮度(輝度)、從光源照射的 光通過格柵之際的衰減率、光在被測量物反射之際的反射率、於拍攝手段進行A/D轉換(類比-數位轉換)之際的轉換效率等相乘來表現。 Therefore, the luminance value of each pixel of the image captured by the photographing means can be illuminated from the light source by the brightness (luminance) of the light source. The attenuation rate of the light passing through the grille, the reflectance of the light when the object is reflected, and the conversion efficiency when the imaging means performs A/D conversion (analog-digital conversion) are expressed.
例如,光源(均一光)的亮度:L For example, the brightness of the light source (uniform light): L
格柵的透射率:G=αsinθ+β α、β為任意的常數。 Transmittance of the grid: G = αsin θ + β α, β is an arbitrary constant.
在設為:在被測量物上的座標(x,y)之反射率:R(x,y) Set to: reflectance of the coordinates (x, y) on the object to be measured: R(x, y)
拍攝手段(拍攝元件)的各畫素之轉換效率:E Conversion efficiency of each pixel of the shooting means (photographing element): E
與被測量物上的座標(x,y)對應之影像上的畫素之輝度值:V(x,y) The luminance value of the pixel on the image corresponding to the coordinate (x, y) on the object to be measured: V(x, y)
在被測量物上的座標(x,y)的光圖案之增益:A(x,y) Gain of the light pattern of the coordinates (x, y) on the object to be measured: A(x, y)
在被測量物上的座標(x,y)的光圖案之偏移量:B(x,y) Offset of the light pattern of the coordinates (x, y) on the object to be measured: B(x, y)
之情況,能以下述式(F1)表示。 In the case, it can be expressed by the following formula (F1).
V(x,y)=L×G×R(x,y)×E=A(x,y)sinθ+B(x,y)‧‧‧(F1) V(x,y)=L×G×R(x,y)×E=A(x,y)sin θ +B(x,y)‧‧‧(F1)
此處,增益A(x,y)係可由「sinθ=1」的光之輝度值V(x,y)MAX與「sinθ=-1」的光之輝度值V(x,y)MIN之差表示,所以,例如,在設為:格柵在θ=0時的透射率(=平均透射率):Gθ=0 Here, the gain A(x, y) is the difference between the luminance value V(x, y) MAX of the light of "sin θ = 1" and the luminance value V (x, y) MIN of the light of "sin θ = -1". Representation, therefore, for example, is set to: transmittance of the grid at θ = 0 (= average transmittance): Gθ =0
格柵在θ=π/2時的透射率(=最大透射率):Gθ=π/2 Transmittance of the grid at θ=π/2 (=maximum transmittance): Gθ = π /2
格柵在θ=-π/2時的透射率(=最小透射率):Gθ=-π/2 Transmittance of the grid at θ=-π/2 (=minimum transmittance): Gθ =- π /2
之情況,能以下述式(F2)表示。 In the case, it can be expressed by the following formula (F2).
A(x,y)={(L×G θ=π/2×R(x,y)×E)-(L×G θ=-π/2×R(x,y)×E)}/2={(L×R(x,y)×E)×(G θ=π/2-G θ=-π/2)}/2‧‧‧(F2) A(x,y)={(L×G θ =π/2 ×R(x,y)×E)-(L×G θ =−π/2 ×R(x,y)×E)}/ 2={(L×R(x,y)×E)×(G θ =π/2 -G θ =-π/2 )}/2‧‧‧(F2)
又,偏移量B(x,y)係為在「sinθ=0」的光之輝度值V(x,y),且為基於在「sinθ=1」的光之輝度值V(x,y)MAX與基於在「sinθ=-1」的光之輝度值V(x,y)MIN之平均值,所以能以下述式(F3)表示。 Further, the offset amount B(x, y) is the luminance value V(x, y) of the light at "sin θ = 0", and is based on the luminance value V (x, y) of the light at "sin θ = 1". Since MAX is based on the average value of the luminance value V(x, y) MIN of the light of "sin θ = -1", it can be expressed by the following formula (F3).
B(x,y)=L×G θ=0×R(x,y)×E={(L×G θ=π/2×R(x,y)×E)+(L×G θ=-π/2×R(x,y)×E)}/2={(L×R(x,y)×E)×(G θ=π/2+G θ=-π/2)}/2‧‧‧(F3) B(x,y)=L×G θ =0 ×R(x,y)×E={(L×G θ =π/2 ×R(x,y)×E)+(L×G θ = -π/2 × R(x, y) × E)}/2 = {(L × R(x, y) × E) × (G θ = π/2 + G θ = -π/2 )} / 2‧‧‧(F3)
亦即,輝度值的最大值V(x,y)MAX、最小值V(x,y)MIN、平均值V(x,y)AV係分別能以下述式(F4)、(F5)、(F6)表示,成為圖3的曲線圖所示的那種關係。 That is, the maximum value of the luminance value V(x, y) MAX , the minimum value V (x, y) MIN , and the average value V (x, y) AV can be expressed by the following equations (F4), (F5), ( F6) indicates that the relationship shown in the graph of Fig. 3 is obtained.
V(x,y)MAX=(L×G θ=π/2×R(x,y)×E)=B(x,y)+A(x,y)‧‧‧(F4) V(x,y) MAX =(L×G θ =π/2 ×R(x,y)×E)=B(x,y)+A(x,y)‧‧‧(F4)
V(x,y)MIN=(L×G θ=-π/2×R(x,y)×E)=B(x,y)-A(x,y)‧‧‧(F5) V(x,y) MIN =(L×G θ =−π/2 ×R(x,y)×E)=B(x,y)-A(x,y)‧‧‧(F5)
V(x,y)AV=(L×R(x,y)×E)×(G θ=π/2+G θ=-π/2)/2=B(x,y)‧‧‧(F6) V(x,y) AV =(L×R(x,y)×E)×(G θ =π/2 +G θ =-π/2 )/2=B(x,y)‧‧‧( F6)
從圖3觀看可明瞭,在既定的座標(x,y)中之輝度值的最大值V(x,y)MAX與輝度值的最少值V(x,y)MIN之平均值V(x,y)AV成為偏移量B(x,y),該偏移量B(x,y)與最大值V(x,y)MAX之差及該偏移量B(x,y)與最少值V(x,y)MIN之差分別成為增益A(x,y)。 It can be seen from Fig. 3 that the maximum value of the luminance value V(x, y) MAX in the predetermined coordinate (x, y) and the minimum value of the luminance value V(x, y) MIN mean V (x, y) AV becomes the offset B(x, y), the difference between the offset B(x, y) and the maximum value V(x, y) MAX and the offset B(x, y) and the minimum value The difference between V(x, y) MIN becomes the gain A(x, y), respectively.
又,輝度值V(x,y)係與光源的亮度L或反射率R(x,y)呈比例變化,故而在例如反射率R成為一半的座標位置,增益A、偏移量B的值亦成為一半。 Further, since the luminance value V(x, y) changes in proportion to the luminance L of the light source or the reflectance R(x, y), for example, the value of the gain A and the offset B at the coordinate position at which the reflectance R becomes half. It has also become half.
接著將上述式(F2)、(F3)設為下述式(F2')、(F3')後,將兩者相加整理後,可導出下述式(F7)。 Then, the above formulae (F2) and (F3) are represented by the following formulas (F2 ' ) and (F3 ' ), and after the two are added together, the following formula (F7) can be derived.
2A(x,y)/(G θ=π/2-G θ=-π/2)=(L×R(x,y)×E)‧‧‧(F2′) 2A(x,y)/(G θ =π/2 -G θ =-π/2 )=(L×R(x,y)×E)‧‧‧(F2′)
2B(x,y)/(G θ=π/2+G θ=-π/2)=(L×R(x,y)×E)‧‧‧(F3′) 2B(x,y)/(G θ =π/2 +G θ =-π/2 )=(L×R(x,y)×E)‧‧‧(F3′)
2A(x,y)/(G θ=π/2-G θ=-π/2)=2B(x,y)/(G θ=π/2+G θ=-π/2)‧‧‧(F7) 2A(x,y)/(G θ =π/2 -G θ =-π/2 )=2B(x,y)/(G θ =π/2 +G θ =-π/2 )‧‧‧ (F7)
然後,將上述式(F7)針對A(x,y)求解時,成為下述式(F8),可顯示成圖4所示的曲線圖。 Then, when the above formula (F7) is solved for A(x, y), the following formula (F8) is obtained, and the graph shown in Fig. 4 can be displayed.
A(x,y)=B(x,y)×(G θ=π/2-G θ=-π/2)/(G θ=π/2+G θ=-π/2)=K×B(x,y)‧‧‧(F8)其中,比例常數K=(G θ=π/2-G θ=-π/2)/(G θ=π/2+G θ=-π/2) A(x,y)=B(x,y)×(G θ =π/2 -G θ =−π/2 )/(G θ =π/2 +G θ =-π/2 )=K× B(x,y)‧‧‧(F8) where the proportional constant K=(G θ =π/2 -G θ =-π/2 )/(G θ =π/2 +G θ =-π/2 )
亦即,在將光源的亮度L或反射率R(x,y)其中一者固定並使另一者變化之情況,偏移量B(x,y)會增減,且增益A(x,y)亦與該偏移量B(x,y)呈比例增減。依據此式(F8),若增益A或偏移量B其中一者為已知,則能求出另一者。此處,比例常數K係與光源的亮度L、反射率R無關地藉由格柵的透射率G決定。亦即,換言之係如下述的手段2、3。 That is, in the case where one of the luminance L or the reflectance R(x, y) of the light source is fixed and the other is changed, the offset B(x, y) is increased or decreased, and the gain A(x, y) also increases or decreases in proportion to the offset B(x, y). According to the equation (F8), if one of the gain A or the offset B is known, the other one can be found. Here, the proportionality constant K is determined by the transmittance G of the grid regardless of the luminance L and the reflectance R of the light source. That is, in other words, means 2, 3 as described below.
手段8.如手段7所記載之三維測量裝置,其中前述增益及偏移量之關係為,前述增益和前述偏移量為相互唯一決定的關係。 The three-dimensional measuring apparatus according to the seventh aspect, wherein the relationship between the gain and the offset amount is such that the gain and the offset amount are mutually uniquely determined.
若增益A和偏移量B為相互唯一決定的關係,則藉由例如作成表示增益A與偏移量B之關係的數學用表、表格資料,可從增益A求出偏移量B或從偏移量B求出增益A。 If the gain A and the offset B are mutually uniquely determined, the offset B or the offset can be obtained from the gain A by, for example, creating a mathematical table or table data indicating the relationship between the gain A and the offset B. The offset B is used to find the gain A.
手段9.如手段7所記載之三維測量裝置,其中前述增益及偏移量之關係為,前述增益和前述偏移量是呈比例關係。 The three-dimensional measuring apparatus according to the seventh aspect, wherein the relationship between the gain and the offset is such that the gain and the offset amount are proportional.
若增益和偏移量為比例關係,則例如能以A=K×B+C〔其中,C:相機的暗電流(偏移量)〕那樣的關係式來表示,成為可由增益A求出偏移量B,或由偏移量B求出增益A。而且可作成下述的手段10那樣的構成。 If the gain and the offset are in a proportional relationship, for example, it can be expressed by a relational expression such as A=K×B+C (where C: dark current (offset) of the camera), and the gain A can be obtained. The amount B is shifted, or the gain A is obtained from the offset B. Further, a configuration such as the following means 10 can be employed.
手段10.如手段7至9中任一手段所記載之三維測量裝置,其中在將於前述2種的影像的光圖案之相對相位關係分別設為0、γ時之該2種的影像之各畫素的輝度值分別V0、V1之情況,前述影像處理手段係求出滿足下述式(1)、(2)、(3)的關係之相位θ,依據該相位θ進行三維測量。 The three-dimensional measuring apparatus according to any one of the above-mentioned means, wherein each of the two types of images is obtained when the relative phase relationship of the light patterns of the two types of images is set to 0 or γ, respectively. In the case where the luminance values of the pixels are V 0 and V 1 respectively, the image processing means obtains the phase θ satisfying the relationship of the following equations (1), (2), and (3), and performs three-dimensional measurement based on the phase θ.
V0=Asinθ+B...(1) V 0 =Asinθ+B...(1)
V1=Asin(θ+γ)+B...(2) V 1 =Asin(θ+γ)+B...(2)
A=KB...(3)其中,γ≠0,A:增益,B:偏移量,K:比例常數。 A = KB (3) where γ ≠ 0, A: gain, B: offset, K: proportional constant.
依據上述手段10,藉由將上述式(3)代入上述式(1),可導出下述式(4)。 According to the above means 10, by substituting the above formula (3) into the above formula (1), the following formula (4) can be derived.
V0=KBsinθ+B...(4)當將此針對偏移量B求解時,則可導出下述式(5)。 V 0 = KBsin θ + B (4) When this is solved for the offset B, the following formula (5) can be derived.
B=V0/(Ksinθ+1)...(5)又,藉由將上述式(2)代入上述式(2),可導出下述式(6)。 B = V 0 / ( Ksin θ + 1) (5) Further, by substituting the above formula (2) into the above formula (2), the following formula (6) can be derived.
V1=KBsin(θ+γ)+B...(6)當將上述式(6)代入上述式(5)且如下述[數7]所示整理後 ,則可導出下述式(7)。 V 1 =KBsin(θ+γ)+B (6) When the above formula (6) is substituted into the above formula (5) and is sorted as shown in the following [number 7], the following formula (7) can be derived. ).
V1=K×{V0/(Ksinθ+1)}sin(θ+γ)+{V0/(Ksinθ+1)} V1×(Ksinθ+1)=KV0sin(θ+γ)+V0=KV0{sinθcosγ+sinγcosθ}+V0-V1Ksinθ+KV0cosγsinθ+KV0sinγcosθ+V0-V1=0 K(V0cosγ-V1)sinθ+KV0sinγcosθ+(V0-V1)=0 (V0cosγ-V1)sinθ+V0sinγcosθ+(V0-V1)/K=0‧‧‧(7) V 1 =K ×{V 0 /(Ksin θ +1)}sin( θ + γ )+{V 0 /(Ksin θ +1)} V 1 ×(Ksin θ +1)=KV 0 sin( θ + γ )+V 0 =KV 0 {sin θ cos γ +sin γ cos θ }+V 0 -V 1 Ksin θ +KV 0 cos γ sin θ +KV 0 sin γ cos θ +V 0 -V 1 =0 K (V 0 cos γ -V 1 )sin θ +KV 0 sin γ cos θ +(V 0 -V 1 )=0 (V 0 cos γ -V 1 )sin θ +V 0 sin γ cos θ +(V 0 -V 1 )/K=0‧‧‧(7)
此處,當設定「V0cosγ-V1=a」、「V0sinγ=b」、「(V0-V1)/K=c」時,上述式(7)可表示成如下述式(8)。 Here, when "V 0 cos γ - V 1 = a", "V 0 sin γ = b", and "(V 0 - V 1 ) / K = c" are set, the above formula (7) can be expressed as follows (8).
asinθ+bcosθ+c=0...(8)此處,如下述[數8]所示,當將上述式(8)針對相位θ求解時,可導出下述[數9]所示之下述式(9)。 Asin θ + bcos θ + c = 0 (8) Here, as shown in the following [Equation 8], when the above equation (8) is solved for the phase θ, the following [9] can be derived. Said (9).
b 2-b 2sin2 θ=c 2+2ac sinθ+a 2sin2 θ b 2 - b 2 sin 2 θ = c 2 +2 ac sin θ + a 2 sin 2 θ
(a 2+b 2)sin2 θ+2ac sinθ+c 2=0 ( a 2 + b 2 )sin 2 θ +2 ac sin θ + c 2 =0
其中、a=V0cosγ-V1 Where a=V 0 cos γ -V 1
b=V0sinγ b=V 0 sin γ
c=(V0-V1)/K c=(V 0 -V 1 )/K
因此,上述手段10中記載滿足『求出下述式(1)、(2)、(3)的關係之相位θ,依據該相位θ進行三維測量』,換言之係『依據下述式(9)求出相位θ,依據該相位θ進行三維測量』。當然,獲得相位θ的演算法係不受上述式(9)所限定,若為滿足上述式(1)、(2)、(3)的關係者,則亦可採用其他構成。 Therefore, in the above-described means 10, it is described that "the phase θ of the relationship of the following formulas (1), (2), and (3) is obtained, and the three-dimensional measurement is performed based on the phase θ", in other words, "based on the following formula (9) The phase θ is obtained, and the three-dimensional measurement is performed based on the phase θ. Of course, the algorithm for obtaining the phase θ is not limited to the above formula (9), and other configurations may be employed if the relationship of the above formulas (1), (2), and (3) is satisfied.
此外,若考慮上述的相機的暗電流C等,則可謀求更提升測量精度。 Further, considering the dark current C or the like of the above-described camera, it is possible to further improve the measurement accuracy.
手段11.如手段10所記載之三維測量裝置,其中設成γ=180°。 Means 11. The three-dimensional measuring apparatus according to the means 10, wherein γ = 180° is set.
依據上述手段11,成為依據在相位差180°的2種的光圖案之下分別所拍攝之2種的影像進行三維測量。 According to the above-described means 11, three-dimensional measurement is performed based on two kinds of images respectively captured under two kinds of light patterns having a phase difference of 180 degrees.
於上述式(2)藉由設定γ=180°而導出下述式(10)。 The following formula (10) is derived by setting γ = 180° in the above formula (2).
V1=Asin(θ+180°)+B=-Asinθ+B...(10)接著,由上述式(1)、(10)可導出下述式(11),當將此針對偏移量B求解時,可導出下述式(12)。 V 1 =Asin(θ+180°)+B=-Asinθ+B (10) Next, the following formula (11) can be derived from the above formulas (1) and (10), when this is When the quantity B is solved, the following formula (12) can be derived.
V0+V1=2B...(11) V 0 +V 1 =2B...(11)
B=(V0+V1)/2...(12)然後,藉由將上述式(12)代入上述式(3),可導出下述式 (13)。 B = (V 0 + V 1 ) / 2 (12) Then, by substituting the above formula (12) into the above formula (3), the following formula (13) can be derived.
A=KB=K(V0+V1)/2...(13)又,當將上述式(1)針對「sinθ」整理時,成為下述式(1')那樣。 A = KB = K (V 0 + V 1 ) / 2 (13) Further, when the above formula (1) is arranged for "sin θ", it is as shown in the following formula (1 ' ).
sinθ=(V0-B)/A...(1')接著,藉由將上述式(12)、(13)代入上述式(1'),可導出下述式(14)。 Sin θ = (V 0 - B) / A (1 ' ) Next, by substituting the above formulas (12) and (13) into the above formula (1 ' ), the following formula (14) can be derived.
sinθ={V0-(V0+V1)/2}/{K(V0+V1)/2}=(V0-V1)/K(V0+V1)...(14)此處,當將上述式(14)針對相位θ求解時,可導出下述式(15)。 Sin θ={V 0 -(V 0 +V 1 )/2}/{K(V 0 +V 1 )/2}=(V 0 -V 1 )/K(V 0 +V 1 )...( 14) Here, when the above formula (14) is solved for the phase θ, the following formula (15) can be derived.
θ=sin-1[(V0-V1)/K(V0+V1)]...(15)亦即,相位θ係可藉由已知的輝度值V0,V1及常數K來特定。 θ=sin -1 [(V 0 -V 1 )/K(V 0 +V 1 )] (15) That is, the phase θ can be obtained by the known luminance values V 0 , V 1 and constants K is specific.
如此,依據上述手段11,可基於較簡單的演算式求出相位θ,在進行測量對象的三維測量之際,處理可更高速化。 As described above, according to the above-described means 11, the phase θ can be obtained based on a simpler calculation formula, and the processing can be speeded up when the three-dimensional measurement of the measurement target is performed.
手段12.如手段10所記載之三維測量裝置,其中設成γ=90°。 The method of claim 3, wherein the three-dimensional measuring device according to the means 10 is set to γ=90°.
依據上述手段12,成為依據在相位差90°的2種的光圖案之下分別所拍攝之2種的影像進行三維測量。 According to the above-described means 12, three-dimensional measurement is performed based on two kinds of images respectively captured under two kinds of light patterns having a phase difference of 90°.
於上述式(2)藉由設定γ=90°而導出下述式(16)。 The following formula (16) is derived by setting γ = 90° in the above formula (2).
V1=Asin(θ+90°)+B =Acosθ+B...(16)當將上述式(16)針對「cosθ」整理時,成為下述式(17)那樣。 V 1 = Asin (θ + 90°) + B = Acos θ + B (16) When the above formula (16) is arranged for "cos θ", it is as shown in the following formula (17).
cosθ=(V1-B)/A...(17)又,將上述式(1)針對「sinθ」整理時,如上述般會成為下述式(1')那樣。 Cos θ = (V 1 - B) / A (17) Further, when the above formula (1) is arranged for "sin θ", the above formula (1 ' ) is obtained as described above.
sinθ=(V0-B)/A...(1')其次當上述式(1')、(17)代入下述式(18)時則成為下述式(19)那樣,再經整理而導出下述式(20)。 Sin θ = (V 0 - B) / A (1 ' ) Next, when the above formulas (1 ' ) and (17) are substituted into the following formula (18), the following formula (19) is obtained, and then The following formula (20) is derived.
sin2θ+cos2θ=1...(18) Sin 2 θ+cos 2 θ=1...(18)
{(V0-B)/A}2+{(V1-B)/A}2=1...(19) {(V 0 -B)/A} 2 +{(V 1 -B)/A} 2 =1...(19)
(V0-B)2+(V1-B)2=A2...(20)接著,當將上述式(3)代入上述式(20)時成為下述式(21)那樣,再將其整理後,導出下述式(22)。 (V 0 - B) 2 + (V 1 - B) 2 = A 2 (20) Next, when the above formula (3) is substituted into the above formula (20), it becomes the following formula (21), and then After finishing this, the following formula (22) is derived.
(V0-B)2+(V1-B)2=K2B2...(21) (V 0 -B) 2 +(V 1 -B) 2 =K 2 B 2 (21)
(2-K2)B2-2(V0+V1)B+V0 2V1 2=0...(22)此處,當將上述式(22)針對偏移量B求解時,可導出下述式(23)。 (2-K 2 )B 2 -2(V 0 +V 1 )B+V 0 2 V 1 2 =0 (22) Here, when the above formula (22) is solved for the offset amount B , the following formula (23) can be derived.
其中、B>0 Where B>0
亦即,偏移量B係可藉由已知的輝度值V0、V1及常數K來特定。 That is, the offset B can be specified by the known luminance values V 0 , V 1 and the constant K.
又,當將上述式(1')、(17)代入下述式(24)時 成為下述式(25)那樣,再將其整理後,導出下述式(26)。 In addition, when the above formulae (1 ' ) and (17) are substituted into the following formula (24), the following formula (25) is obtained, and after finishing, the following formula (26) is derived.
tanθ=sinθ/cosθ...(24) Tanθ=sinθ/cosθ...(24)
={(V0-B)/A}/{(V1-B)/A}...(25) ={(V 0 -B)/A}/{(V 1 -B)/A}...(25)
=(V0-B)/(V1-B)...(26) =(V 0 -B)/(V 1 -B)...(26)
接著,當將上述式(26)針對相位θ求解時,可導出下述式(27)。 Next, when the above formula (26) is solved for the phase θ, the following formula (27) can be derived.
θ=tan-1{(V0-B)/(V1-B)}..(27) θ=tan -1 {(V 0 -B)/(V 1 -B)}..(27)
亦即,相位θ係藉由使用上述式(23)而可藉由已知的輝度值V0、V1及常數K來特定 That is, the phase θ can be specified by the known luminance values V 0 , V 1 and the constant K by using the above formula (23).
如此,依據上述手段2,因為可依據使用了「tan-1」的演算式求出相位θ,所以可在-180°~180°的360°範圍進行三維測量,能更加大測量範圍。 As described above, according to the above-described means 2, since the phase θ can be obtained based on the calculation formula using "tan -1 ", the three-dimensional measurement can be performed in the 360° range of -180° to 180°, and the measurement range can be further increased.
手段13.如手段7至12中任一手段所記載之三維測量裝置,其中具備預先掌握前述增益及偏移量的關係之關係掌握手段。 The three-dimensional measuring apparatus according to any one of the means 7 to 12, further comprising: a relationship grasping means for grasping the relationship between the gain and the offset amount in advance.
在關係掌握手段方面,例如可舉出預先藉由校正掌握增益及偏移量的關係之構成。例如對基準板照射3種或4種相位變化的光圖案,依據在此等之下分別所拍攝的3種或4種的影像特定在各畫素中之增益A及偏移量B,由上述式(3)事先決定常數K。依據此構成,可在各畫素進行精度更佳的測量。 For the relationship grasping means, for example, a configuration in which the relationship between the gain and the offset amount is corrected in advance is exemplified. For example, the reference plate is irradiated with three or four kinds of phase-changing light patterns, and the gain A and the offset B in each pixel are specified by the three or four kinds of images respectively taken under the above-mentioned The constant (K) is determined in advance by the formula (3). According to this configuration, it is possible to perform measurement with higher accuracy in each pixel.
又,在關係掌握手段方面,例如可舉出依據另外進行測量時(實測時)所拍攝之影像掌握增益及偏移量的關係之構成。依據此構成,可省略校正的功夫,可謀求更縮短測量時間。 Further, the relationship grasping means may be, for example, a configuration in which the relationship between the image grasping gain and the shift amount captured when the measurement is performed (in actual measurement). According to this configuration, the correction work can be omitted, and the measurement time can be further shortened.
此處,上述「另外進行測量時所拍攝之影像」除了例如在4種或3種相位變化的光圖案之下所分別拍攝之4種或3種的影像外,當然亦包含在2種相位變化的光圖案之下所分別拍攝之2種的影像。 Here, the above-mentioned "images taken when measuring separately" are, of course, included in two kinds of phase changes, in addition to four or three kinds of images respectively taken under four or three kinds of phase-changing light patterns. Two types of images taken separately under the light pattern.
此外,在依據2種相位變化的光圖案之下分別所拍攝之2種的影像來掌握增益及偏移量的關係之情況,例如使用上述式(12)等針對影像的全畫素求出偏移量B,其中抽出偏移量B的值是一致的畫素之輝度值V,作成其直方圖。接著,從其直方圖決定輝度值的最大值VMAX與最小值VMIN。 Further, in the case of grasping the relationship between the gain and the offset amount in two types of images respectively captured under the light patterns of the two kinds of phase changes, for example, the full-pixel of the image is obtained using the above formula (12). The shift amount B, in which the value of the extracted offset B is a uniform luminance value V of the pixel, is formed as a histogram. Next, the maximum value V MAX of the luminance value and the minimum value V MIN are determined from the histogram.
如上述,輝度值的最大值VMAX和最少值VMIN的平均值成為偏移量B,最大值VMAX和最少值VMIN的差的一半成為增益A。據此可從上述式(3)決定常數K。 As described above, the average value of the maximum value V MAX and the minimum value V MIN of the luminance value becomes the offset amount B, and half of the difference between the maximum value V MAX and the minimum value V MIN becomes the gain A. According to this, the constant K can be determined from the above formula (3).
手段14.如手段1至13中任一手段所記載之三維測量裝置,其中前述測量對象為,印刷於作為前述被測量物的印刷基板上之銲膏或形成於作為前述被測量物的晶圓基板上之銲料凸塊。 The three-dimensional measuring device according to any one of the above-mentioned means, wherein the measuring object is a solder paste printed on a printed substrate as the object to be measured or a wafer formed as the object to be measured Solder bumps on the substrate.
依據上述手段14,可進行印刷於印刷基板上的銲膏或形成於晶圓基板之銲料凸塊的高度測量等。而且,在銲膏或銲料凸塊的檢查中,依據其測量值可進行銲膏或銲料凸塊的良否判定。因此,在此檢查中,達成上述各手段的作用效果,可精度佳地進行良否判定。結果,可謀求提升在銲料印刷檢查裝置或銲料凸塊檢查裝置中之檢查精度。 According to the above means 14, the solder paste printed on the printed substrate or the height of the solder bump formed on the wafer substrate can be measured. Moreover, in the inspection of the solder paste or the solder bump, the quality of the solder paste or the solder bump can be determined based on the measured value. Therefore, in this inspection, the effects of the above-described respective means are achieved, and the quality determination can be performed with high precision. As a result, it is possible to improve the inspection accuracy in the solder print inspection device or the solder bump inspection device.
1‧‧‧基板檢查裝置 1‧‧‧Substrate inspection device
2‧‧‧印刷基板 2‧‧‧Printing substrate
4‧‧‧照明裝置 4‧‧‧Lighting device
4a‧‧‧光源 4a‧‧‧Light source
4b‧‧‧液晶格柵 4b‧‧‧LCD grille
5‧‧‧相機 5‧‧‧ camera
6‧‧‧控制裝置 6‧‧‧Control device
23‧‧‧顯示裝置 23‧‧‧Display device
24‧‧‧影像資料記憶裝置 24‧‧‧Image data memory device
25‧‧‧演算結果記憶裝置 25‧‧‧ calculus result memory device
26‧‧‧設定資料記憶裝置 26‧‧‧Set data memory device
230‧‧‧條件設定畫面 230‧‧‧ Condition setting screen
A‧‧‧增益 A‧‧‧ Gain
B‧‧‧偏移量 B‧‧‧Offset
K‧‧‧比例常數 K‧‧‧proportional constant
Js、Jb‧‧‧銲膏 Js, Jb‧‧‧ solder paste
W1~W4‧‧‧檢查區域 W1~W4‧‧‧ inspection area
圖1係顯示基板檢查裝置的示意概略立體圖。 Fig. 1 is a schematic perspective view showing a substrate inspecting apparatus.
圖2係顯示基板檢查裝置的電氣構成之方塊圖。 Fig. 2 is a block diagram showing the electrical configuration of the substrate inspecting device.
圖3係顯示光源的亮度或反射率與輝度值之關係的圖表。 Figure 3 is a graph showing the relationship between the brightness or reflectance of a light source and the luminance value.
圖4係顯示增益與偏移量之關係的圖表。 Figure 4 is a graph showing the relationship between gain and offset.
圖5係顯示條件設定畫面之圖。 Fig. 5 is a view showing a condition setting screen.
圖6係顯示檢查程序的流程圖。 Figure 6 is a flow chart showing the inspection procedure.
圖7係顯示用以說明銲膏或檢查區域的配置關係等之印刷基板的一態樣例之示意圖。 Fig. 7 is a schematic view showing an example of a printed substrate for explaining the arrangement relationship of solder paste or inspection regions and the like.
圖8(a)~(c)係用以說明相機及照明裝置的處理動作之時序圖。 8(a) to (c) are timing charts for explaining processing operations of the camera and the illumination device.
圖9係表示各資料區間所含之輝度值的數的分布之分布表。 Fig. 9 is a table showing the distribution of the distribution of the number of luminance values included in each data section.
圖10係表示各資料區間所含之輝度值的數的分布之直方圖。 Fig. 10 is a histogram showing the distribution of the number of luminance values included in each data section.
圖11係顯示其他實施形態中之條件設定畫面的圖。 Fig. 11 is a view showing a condition setting screen in another embodiment.
圖12係顯示其他實施形態中之條件設定畫面的圖。 Fig. 12 is a view showing a condition setting screen in another embodiment.
〔第1實施形態〕 [First Embodiment]
以下,針對一實施形態一邊參照圖面一邊作說明。圖1係示意顯示具備本實施形態中之三維測量裝置的基板檢查裝置1之概略構成圖。如同圖所示,基板檢查裝置1具備:載置台3,用以載置被印刷測量對象的焊膏而成之作為被測量物的印刷基板2;作為照射手段的照明裝置 4,其對印刷基板2的表面從斜上方照射既定的光圖案;作為拍攝手段的相機5,用以拍攝印刷基板2上的被照射光圖案的部份(亦即來自該部分之反射光);及控制裝置6,用以實施照明裝置4或相機5之驅動控制等、在基板檢查裝置1內之各種控制或影像處理、演算處理。控制裝置6係構成本實施形態中的影像取得手段及影像處理手段。 Hereinafter, an embodiment will be described with reference to the drawings. Fig. 1 is a schematic block diagram showing a substrate inspecting apparatus 1 including a three-dimensional measuring apparatus according to the present embodiment. As shown in the figure, the substrate inspection apparatus 1 includes a mounting table 3 on which a solder substrate to be printed with a solder paste to be printed is mounted, and a printing substrate 2 as an object to be measured. 4. The surface of the printed circuit board 2 is irradiated with a predetermined light pattern from obliquely upward; the camera 5 as a photographing means is used to photograph the portion of the printed substrate 2 that is illuminated (that is, the reflected light from the portion) And the control device 6 for performing various control, image processing, and calculation processing in the substrate inspection device 1 such as driving control of the illumination device 4 or the camera 5. The control device 6 constitutes an image acquisition means and an image processing means in the present embodiment.
於載置台3設有馬達15、16,形成透過該馬達15、16受控制裝置6所驅動控制,使被載置於載置台3上的印刷基板2朝任意方向(X軸方向及Y軸方向)滑動。 Motors 15 and 16 are provided on the mounting table 3, and the motors 15 and 16 are driven and controlled by the control device 6, so that the printed circuit board 2 placed on the mounting table 3 is oriented in an arbitrary direction (X-axis direction and Y-axis direction). )slide.
照明裝置4具備:發出既定的光之光源4a;及將源自該光源4a的光轉換成具有正弦波狀(條紋狀)的光強度分布之光圖案的液晶格柵4b,可對印刷基板2從斜上方照射複數種相位變化之條紋狀的光圖案。 The illuminating device 4 includes a light source 4a that emits a predetermined light, and a liquid crystal grid 4b that converts light from the light source 4a into a light pattern having a sinusoidal (striped) light intensity distribution, which can be applied to the printed substrate 2 A plurality of stripe-shaped light patterns of phase change are irradiated obliquely from above.
更詳言之,照明裝置4中,從光源4a發出的光係藉由光纖導引至一對的聚光透鏡,在該處成為平行光。其平行光經由液晶格柵4b被導往投影透鏡。然後,從投影透鏡對印刷基板2照射條紋狀的光圖案。 More specifically, in the illumination device 4, the light emitted from the light source 4a is guided by an optical fiber to a pair of condenser lenses, where it becomes parallel light. Its parallel light is guided to the projection lens via the liquid crystal grid 4b. Then, the printed circuit board 2 is irradiated with a stripe-shaped light pattern from the projection lens.
液晶格柵4b具備:於一對的透明基板間形成液晶層並配置在一透明基板上之共通電極;及與其對向般地複數併列於另一透明基板上之帶狀電極,利用驅動電路對分別連接於各帶狀電極之切換元件(薄膜電晶體等)進行on-off控制,透過控制施加於各帶狀電極之電壓而切換和各帶狀電極對應之各格柵線的透光率,形成由透光率高的「明部」與透光率低的「暗部」構成之條紋狀的格柵圖案。然後,經由液晶格柵4b照射於印刷基板2 上的光係依起因於繞射作用的模糊等而成為具有正弦波狀的光強度分布之光圖案。此外,液晶格柵4b中之格柵態樣係藉由控制裝置6(格柵控制手段)切換控制。 The liquid crystal grid 4b includes a common electrode in which a liquid crystal layer is formed between a pair of transparent substrates and disposed on a transparent substrate, and a strip electrode which is aligned in parallel with another transparent substrate, and is driven by a driving circuit. Switching elements (thin film transistors, etc.) respectively connected to the respective strip electrodes are subjected to on-off control, and the light transmittance of each of the grid lines corresponding to each strip electrode is switched by controlling the voltage applied to each strip electrode. A stripe-shaped grid pattern composed of a "bright portion" having a high light transmittance and a "dark portion" having a low light transmittance is formed. Then, it is irradiated onto the printed substrate 2 via the liquid crystal grid 4b. The light system on the light is a light pattern having a sinusoidal light intensity distribution depending on the blurring of the diffraction action or the like. Further, the grid pattern in the liquid crystal grid 4b is switched and controlled by the control device 6 (grid control means).
相機5係由透鏡或拍攝元件等構成。在拍攝元件方面,採用CMOS感測器。當然,拍攝元件係不受此所限定,例如亦可採用CCD感測器等。 The camera 5 is constituted by a lens, an imaging element, or the like. In terms of imaging elements, a CMOS sensor is used. Of course, the imaging element is not limited to this, and for example, a CCD sensor or the like can also be used.
藉相機5所拍攝的影像資料係於該相機5內部變換成數位信號後,以數位信號的形式輸入於控制裝置6並記憶在後述的影像資料記憶裝置24。接著,控制裝置6係依據該影像資料實施後述的影像處理或檢查處理等。 The image data captured by the camera 5 is converted into a digital signal by the camera 5, and then input to the control device 6 as a digital signal and stored in the image data storage device 24 to be described later. Next, the control device 6 performs image processing, inspection processing, and the like which will be described later based on the image data.
接著,針對控制裝置6之電氣的構成作說明。如圖2所示,控制裝置6具備:掌管基板檢查裝置1整體的控制之CPU及輸入/輸出介面21(以下,稱為「CPU等21」);由鍵盤、滑鼠或觸控面板所構成之作為「輸入手段」的輸入裝置22;CRT或液晶等的具有顯示畫面之作為「顯示手段」的顯示裝置23;用以記憶藉相機5所拍攝的影像資料之影像資料記憶裝置24;用以記憶各種演算結果之演算結果記憶裝置25;及用以預先事先記憶封面資料(設計資料)或後述的校正資料等各種資訊之設定資料記憶裝置26。此外,此等各裝置22~26係與CPU等21電連接。 Next, the electrical configuration of the control device 6 will be described. As shown in FIG. 2, the control device 6 includes a CPU that controls the entire substrate inspection device 1 and an input/output interface 21 (hereinafter referred to as "CPU 21"); and a keyboard, a mouse, or a touch panel. An input device 22 as an "input means"; a display device 23 as a "display means" having a display screen such as a CRT or a liquid crystal; and an image data storage device 24 for storing image data captured by the camera 5; The calculation result memory device 25 that memorizes various calculation results; and the setting data storage device 26 for pre-remembering various information such as cover data (design data) or correction data to be described later. Further, each of the devices 22 to 26 is electrically connected to the CPU 21 or the like.
其次,針對基板檢查裝置1之印刷基板2的檢查順序作詳細說明。首先針對在開始印刷基板2的檢查之前要進行的校正作說明。校正係用以掌握光圖案的不均(相位分布)者。 Next, the inspection procedure of the printed substrate 2 of the substrate inspection apparatus 1 will be described in detail. First, the correction to be performed before starting the inspection of the printed substrate 2 will be described. The correction system is used to grasp the unevenness (phase distribution) of the light pattern.
就液晶格柵4b而言,因為依連接於各帶狀電極的各電晶體之特性(偏移量或增益等)的不均,也會在施加於上述各帶狀電極之電壓產生不均,所以即使是相同的「明部」、「暗部」,對應於各帶狀電極的各線之透光率(亮度準位)變得不均。其結果,照射於被測量物上的光圖案亦未成為正弦波狀的理想光強度分布,會有三維測量結果產生誤差之虞。 In the liquid crystal grid 4b, the voltage applied to each of the strip electrodes is uneven due to the variation in characteristics (offset amount, gain, etc.) of the respective transistors connected to the respective strip electrodes. Therefore, even in the same "bright portion" or "dark portion", the light transmittance (luminance level) of each line corresponding to each strip electrode becomes uneven. As a result, the light pattern irradiated onto the object to be measured does not have a sinusoidal ideal light intensity distribution, and there is a possibility that an error occurs in the three-dimensional measurement result.
於是,進行預先掌握光圖案的不均(相位分布)之所謂校正等。 Then, the so-called correction or the like in which the unevenness (phase distribution) of the light pattern is grasped in advance is performed.
在校正的順序方面,首先準備不同於印刷基板2之高度位置為0且呈平面的基準面。基準面係和作為測量對象的銲膏同一色。亦即,銲膏與光圖案的反射率變相等。 In terms of the order of correction, first, a reference plane different from the height position of the printed substrate 2 and having a plane is prepared. The reference surface is the same color as the solder paste as the measurement object. That is, the reflectance of the solder paste and the light pattern become equal.
接著,藉由對上述基準面照射光圖案,並藉由相機5拍攝其反射光,獲得含有各座標的輝度值之影像資料。本實施形態中,在進行校正之際,使光圖案的相位各偏移90°,取得在各光圖案之下分別所拍攝之4種的影像資料。 Next, by irradiating the reference surface with a light pattern and taking the reflected light by the camera 5, image data containing the luminance values of the respective coordinates is obtained. In the present embodiment, when the correction is performed, the phase of the light pattern is shifted by 90 degrees, and four types of image data respectively captured under each light pattern are obtained.
然後,控制裝置6係從上述4種的影像資料算出在各畫素(座標)中之光圖案的相位θ,將此作為校正資料記憶在設定資料記憶裝置26。 Then, the control device 6 calculates the phase θ of the light pattern in each pixel (coordinate) from the above-described four kinds of video data, and stores this as correction data in the setting data storage device 26.
而且,在本實施形態中,從上述4種的影像資料特定各畫素中之光圖案的增益A及偏移量B、以及兩者的關係(參照圖3、4),將此作為校正資料記憶在設定資料記憶裝置26。 Further, in the present embodiment, the gain A and the shift amount B of the light pattern in each pixel are specified from the above-described four kinds of video data, and the relationship between the two (see FIGS. 3 and 4) is used as the correction data. It is stored in the setting data memory device 26.
此處,針對算出增益A及偏移量B的順序作更詳細說明。在4種的影像資料之各畫素的輝度值(V0、V1、V2、V3)與增益A及偏移量B之關係可利用下述式(H1)、(H2)、(H3)、(H4)表示。 Here, the order of calculating the gain A and the offset B will be described in more detail. The relationship between the luminance values (V 0 , V 1 , V 2 , and V 3 ) of each of the four types of video data and the gain A and the offset B can be expressed by the following equations (H1), (H2), ( H3), (H4).
V0=Asinθ+B‧‧‧(H1) V 0 =Asin θ +B‧‧‧(H1)
V1=Asin(θ+90°)+B=Acosθ+B‧‧‧(H2) V 1 =Asin( θ +90°)+B=Acos θ +B‧‧‧(H2)
V2=Asin(θ+180°)+B=-Asinθ+B‧‧‧(H3) V 2 =Asin( θ +180°)+B=-Asin θ +B‧‧‧(H3)
V3=Asin(θ+270°)+B=-Acosθ+B‧‧‧(H4) V 3 =Asin( θ +270°)+B=-Acos θ +B‧‧‧(H4)
接著,當將4種的影像資料之輝度值(V0、V1、V2、V3)加算且將上述式(H1)、(H2)、(H3)、(H4)整理成如下述[數12]所示那樣後,可導出下述式(H5)。 Next, when the luminance values (V 0 , V 1 , V 2 , and V 3 ) of the four types of image data are added, the above equations (H1), (H2), (H3), and (H4) are organized as follows [ After the number 12], the following formula (H5) can be derived.
V0+V1+V2+V3=(Asinθ+B)+(Acosθ+B)+(-Asinθ+B)+(-Acosθ+B)=4B B=(V0+V1+V2+V3)/4‧‧‧(H5) V 0 +V 1 +V 2 +V 3 =(Asin θ +B)+(Acos θ +B)+(-Asin θ +B)+(-Acos θ +B)=4B B=(V 0 +V 1 +V 2 +V 3 )/4‧‧‧(H5)
又,從上述式(H1)、(H3)可導出下述式(H6)。 Further, the following formula (H6) can be derived from the above formulas (H1) and (H3).
依據V0-V2=2Asinθ,sinθ=(V0-V2)/2A‧‧‧(H6) According to V 0 -V 2 =2Asin θ, sin θ=(V 0 -V 2 )/2A‧‧‧(H6)
又,從上述式(H2)、(H4)可導出下述式(H7)。 Further, the following formula (H7) can be derived from the above formulas (H2) and (H4).
依據V1-V3=2Acosθ,cosθ=(V1-V3)/2A‧‧‧(H7) According to V 1 -V 3 =2Acosθ, cos θ=(V 1 -V 3 )/2A‧‧‧(H7)
接著,如下述[數15]所示,當將上述式(H6)、(H7)代入下述式(H8)整理後,可導出下述式(H9)。 Then, as shown in the following [Number 15], when the above formulae (H6) and (H7) are substituted into the following formula (H8), the following formula (H9) can be derived.
1=sin2 θ+cos2 θ‧‧‧(H8) 1=sin 2 θ +cos 2 θ ‧‧‧(H8)
1={(V0-V2)/2A}2+{(V1-V3)/2A}2 1={(V 0 -V 2 )/2A} 2 +{(V 1 -V 3 )/2A} 2
4A2=(V0-V2)2+(V1-V3)2 4A 2 =(V 0 -V 2 ) 2 +(V 1 -V 3 ) 2
其中,A>0 Where A>0
然後,依據從上述式(H5)、(H9)導出之下述式(H10)算出增益A及偏移量B的比例常數K。 Then, the proportional constant K of the gain A and the offset B is calculated from the following equation (H10) derived from the above equations (H5) and (H9).
然後,將如上述所算出之各畫素中之光圖案的增益A、偏移量B、及比例常數K作為校正資料記憶在設定資料記憶裝置26。當然,亦可建構成:僅將比例常數K記憶作為校正資料。因此,藉由用以決定比例常數K的上述一連串處理機能來構成本實施形態中之關係掌握手段。 Then, the gain A, the offset B, and the proportional constant K of the light pattern in each of the pixels calculated as described above are stored as correction data in the setting data storage device 26. Of course, it can also be constructed: only the proportional constant K memory is used as the correction data. Therefore, the relationship grasping means in the present embodiment is constructed by the above-described series of processing functions for determining the proportionality constant K.
此外,本實施形態中建構成:依據在相位差90°的4種的光圖案之下分別所拍攝之4種的影像資料進行校正,但不受此所限,亦可建構成:例如依據在相位相異的3種的光圖案之下分別所拍攝之3種的影像資料進 行校正。 Further, in the present embodiment, the configuration is based on four types of image data captured under four kinds of light patterns having a phase difference of 90°, but it is not limited thereto, and may be constructed, for example, based on Three kinds of image data taken under the three kinds of light patterns with different phases Line correction.
又,亦可建構成:在進行校正之際,改變光源的輝度進行複數次。若作成此構成,可求到下述式(28)所示的相機5的暗電流(偏移量)。 Further, it is also possible to construct a configuration in which the luminance of the light source is changed a plurality of times when the correction is performed. With this configuration, the dark current (offset amount) of the camera 5 shown by the following formula (28) can be obtained.
A=KB+C...(28) A=KB+C...(28)
其中,A:增益,B:偏移量,C:相機的暗電流(偏移量),K:比例常數。 Among them, A: gain, B: offset, C: camera dark current (offset), K: proportional constant.
或者亦可建構成,增益A與偏移量B之關係不是以式子求出,而是藉由作成表示增益A與偏移量B之關係的數學用表、表格資料,可從增益A求出偏移量B或從偏移量B求出增益A。 Alternatively, the relationship between the gain A and the offset B is not obtained by the equation, but by creating a mathematical table and table data indicating the relationship between the gain A and the offset B, the gain A can be obtained. The offset B is obtained or the gain A is obtained from the offset B.
又,亦可作成取代校正,改為在另外進行測量時(實測時),於4種(或3種)相位變化的光圖案之下利用各個拍攝的4種(或3種)的影像資料來求出增益A與偏移量B之關係(比例常數K)的構成。 In addition, it is also possible to use a substitution correction instead of using four (or three) types of image data for each of the four (or three) phase-changing light patterns when performing another measurement (in actual measurement). The relationship between the gain A and the offset B (proportional constant K) is obtained.
其次,針對在開始印刷基板2的檢查之前要進行的條件設定處理作說明。條件設定處理,係用以事先設定在決定作為影像取得手段的控制裝置6針對各檢查區域(測量區域)應取得(拍攝)的影像資料數(拍攝次數)時要參照之既定的判定條件。因此,成為藉由執行此條件設定處理之控制裝置6的機能(包含輸入裝置22、顯示裝置23)來構成本實施形態中之條件設定手段。 Next, a description will be given of a condition setting process to be performed before starting the inspection of the printed substrate 2. The condition setting process is a predetermined determination condition to be referred to when the number of pieces of image data (the number of times of imaging) to be acquired (photographed) for each of the inspection areas (measurement areas) is determined in advance by the control device 6 that determines the image acquisition means. Therefore, the function setting means in the present embodiment is constituted by the function (including the input device 22 and the display device 23) of the control device 6 that executes the condition setting process.
如同後述,本實施形態建構成:於檢查區域內含有滿足此處設定的判定條件的銲膏之情況,取得在第1既定數種是4種相位變化的光圖案之下分別所拍攝之 4種的影像資料,另一方面,在檢查區域內未含有滿足前述判定條件的銲膏之情況,取得在第2既定數種是2種相位變化的光圖案之下分別所拍攝之2種的影像資料。 As will be described later, the present embodiment is configured to include a solder paste that satisfies the determination condition set here in the inspection region, and to obtain a photograph of each of the first predetermined types of light patterns having four phase changes. On the other hand, in the case where the solder paste which satisfies the above-described determination condition is not contained in the inspection area, two kinds of images which are respectively photographed under the second predetermined number of light patterns of two kinds of phase changes are obtained. video material.
本實施形態中之條件設定處理係經由顯示於顯示裝置23之條件設定畫面230(參照圖5)而進行。在條件設定畫面230設有能設定作為判定條件之複數個項目欄。 The condition setting processing in the present embodiment is performed via the condition setting screen 230 (see FIG. 5) displayed on the display device 23. The condition setting screen 230 is provided with a plurality of item fields that can be set as the determination conditions.
更詳言之,設有:「屬性」項目欄231,可將對銲膏構裝的電子零件是既定品種設為判定條件之一;「體積」項目欄232,可將銲膏的體積是小於既定值設為判定條件之一;「面積」項目欄233,可將銲膏的面積是小於既定值設為判定條件之一;「周圍長」項目欄234,可將銲膏的周圍長是小於既定值設為判定條件之一;及「短邊長」項目欄235,可將銲膏的短邊長是小於既定值設為判定條件之一。 More specifically, there is an "attribute" item column 231, which can set the electronic component to be soldered to a predetermined type as one of the determination conditions; the "volume" item column 232 can make the volume of the solder paste smaller than The predetermined value is one of the determination conditions; the "area" item column 233 can set the area of the solder paste to be less than a predetermined value as one of the determination conditions; the "circumference length" item column 234 can make the circumference of the solder paste smaller than The predetermined value is set as one of the determination conditions; and the "short side length" item column 235 can set one of the determination conditions as the short side length of the solder paste is less than a predetermined value.
在各項目欄231~235設有用以選擇其項目之核取方塊(check box)236。本實施形態係為,例如「屬性」及「體積」那樣,可同時選擇複數個項目之構成。但,本實施形態係為,在選擇複數個項目(條件)之情況,若滿足任一個項目,則滿足判定條件的構成(所謂OR條件)。當然,亦可取而代之,作成複數個項目(條件)全部滿足是滿足判定條件的構成(所謂AND條件)。 In each of the item fields 231 to 235, a check box 236 for selecting an item thereof is provided. In the present embodiment, for example, "attribute" and "volume" can be combined to select a plurality of items. However, in the present embodiment, when a plurality of items (conditions) are selected, if any one of the items is satisfied, the configuration of the determination condition (so-called OR condition) is satisfied. Of course, instead of creating a plurality of items (conditions), it is a configuration that satisfies the determination condition (so-called AND condition).
關於「屬性」項目欄231中之作為判定條件之電子零件的品種,可舉出SOP(Small Outline Package;小輪廓構裝)、SOJ(Small Outline J-leaded;J腳型小輪廓 構裝)、SOT(Small Outline Transistor;小外型電晶體)、QFP(Quad Flat Package;方形扁平式構裝)、PLCC(Plastic leaded chip carrier;塑料電極晶片載體)、BGA(Ball grid array;球格陣列)。當然,亦可建構成:作為判定條件之電子零件的品種不受此等所限,例如可將LGA(Land grid array)等其他的品種設為判定條件。 The type of the electronic component as the determination condition in the "attribute" item column 231 includes an SOP (Small Outline Package) and a SOJ (Small Outline J-leaded; J-shaped outline). Structure), SOT (Small Outline Transistor), QFP (Quad Flat Package), PLCC (Plastic leaded chip carrier), BGA (Ball grid array; ball) Grid array). Needless to say, the type of the electronic component as the determination condition is not limited thereto. For example, other types such as LGA (Land grid array) can be used as the determination conditions.
又,在「屬性」項目欄231設有對應於電子零件的各品種之用以選擇此等品種之核取方塊237。於此處核取方塊237放入檢核所選擇之既定品種的電子零件被設為判定條件之一,而記憶在設定資料記憶裝置26。 Further, in the "attribute" item column 231, a check box 237 for selecting these varieties corresponding to each type of electronic component is provided. The electronic component of the predetermined type selected in the check box 237 is set as one of the determination conditions, and is stored in the setting data storage device 26.
此外,各品種的核取方塊237為,於「屬性」項目欄231的核取方塊236放入檢核,透過選擇該「屬性」項目才成為開始可輸入(可選擇)檢核。又,本實施形態係為,例如「SOP」及「SOJ」那樣,可同時選擇複數個品種之構成。但,本實施形態係為,在選擇複數個品種(條件)的情況,若滿足任一個品種,則滿足判定條件的構成(所謂OR條件)。 In addition, the check box 237 of each item is placed in the check box 236 of the "Properties" item column 231, and the check box is selected to be input (optional) by selecting the "attribute" item. Further, in the present embodiment, for example, "SOP" and "SOJ" can be selected at the same time. However, in the present embodiment, when a plurality of varieties (conditions) are selected, if any one of the varieties is satisfied, the configuration of the determination condition (so-called OR condition) is satisfied.
另一方面,在「體積」、「面積」、「周圍長」及「短邊長」的各項目欄232~235,設有用以輸入成為判定條件之數值的輸入欄238。此處輸入輸入欄238的數值被設為判定條件之一,被記憶在設定資料記憶裝置26。此外,各輸入欄238為,於各自對應的各項目欄232~235的核取方塊236放入檢核,透過選擇該項目才成為開始可輸入(可選擇)數值。 On the other hand, in each of the item fields 232 to 235 of "volume", "area", "surrounding length", and "short side length", an input field 238 for inputting a numerical value to be a determination condition is provided. Here, the value of the input field 238 is set as one of the determination conditions, and is stored in the setting data storage device 26. In addition, each input field 238 is checked in the check box 236 of each corresponding item column 232-235, and the input (optional) value is started by selecting the item.
例如,此處在將『「體積」是小於「1mm3」 』設定為判定條件之情況,於『「體積」是小於「1mm3」』的銲膏是包含在檢查區域內的情況,藉由4次拍攝方式取得影像資料,另一方面,於檢查區域內未含有『「體積」是小於「1mm3」』的銲膏之情況,藉由2次拍攝方式取得影像資料。 For example, in the case where "the volume" is less than "1 mm 3 " is set as the determination condition, the case where the "volume" is less than "1 mm 3 " is included in the inspection area. On the other hand, the image data was obtained by the four-shot method, and the image data was acquired by the two-shot method in the case where the "volume" was less than "1 mm 3 " in the inspection area.
其次,針對各檢查區域所進行之檢查程序,參照圖6的流程圖作詳細說明。此檢查程序係由控制裝置6(CPU等21)所執行者。 Next, the inspection procedure performed for each inspection area will be described in detail with reference to the flowchart of FIG. 6. This inspection program is executed by the control device 6 (CPU or the like 21).
控制裝置6係首先驅動控制馬達15、16使印刷基板2移動,將相機5的視野對準印刷基板2上之既定的檢查區域。此外,檢查區域係為以相機5的視野大小為1個單位將印刷基板2的表面所預先分割當中的1個區域。 The control device 6 first drives the control motors 15 and 16 to move the printed circuit board 2, and aligns the field of view of the camera 5 with a predetermined inspection area on the printed circuit board 2. In addition, the inspection area is one area in which the surface of the printed circuit board 2 is previously divided by one field of view of the camera 5.
接著,在步驟S101中,判定此檢查區域內是否含有滿足上述條件設定處理所設定之既定的判定條件(例如體積小於既定值)的銲膏。此處的判定係參照預先記憶的封面資料進行。 Next, in step S101, it is determined whether or not the solder paste satisfying the predetermined determination condition (for example, the volume is smaller than a predetermined value) set by the condition setting processing is included in the inspection region. The determination here is made with reference to the pre-memorized cover data.
在封面資料記憶有例如設於印刷基板2上的銲墊、及印刷於該銲墊上之理想的銲膏的位置、大小、形狀等,並記憶有此等銲墊或銲膏所屬之電子零件的品種等。 The cover material stores, for example, a pad provided on the printed circuit board 2, and a position, a size, a shape, and the like of an ideal solder paste printed on the pad, and memorizes the electronic component to which the pad or solder paste belongs. Variety and so on.
此處,在檢查區域內含有滿足前述判定條件的銲膏之情況,移至步驟S102,針對此檢查區域利用4次拍攝方式取得影像資料。亦即,取得以4種的相位照射、拍攝光圖案所得之4種的影像資料。 Here, in the case where the solder paste satisfying the above-described determination condition is included in the inspection region, the process proceeds to step S102, and the image data is acquired by the four-time imaging method for the inspection region. In other words, four kinds of image data obtained by irradiating the light patterns in four kinds of phases are obtained.
更詳言之,控制裝置6係首先切換控制照明裝 置4的液晶格柵4b,將形成於該液晶格柵4b的格柵的位置設定在既定的基準位置(相位「0°」的位置)。 More specifically, the control device 6 first switches the control lighting device The liquid crystal grid 4b of the fourth liquid crystal grid 4b sets the position of the grid formed on the liquid crystal grid 4b at a predetermined reference position (a position of phase "0°").
當液晶格柵4b的切換設定完成時,控制裝置6係於既定的時序Ta1,在相位「0°」的光圖案之下開始第1次的拍攝處理〔參照圖8(a)〕。 When the switching setting of the liquid crystal grid 4b is completed, the control device 6 starts the first imaging process under the light pattern of the phase "0°" at a predetermined timing Ta1 (see FIG. 8(a)).
具體言之,使照明裝置4的光源4a發光,開始光圖案的照射,並驅動控制相機5,開始拍攝被該光圖案照射之檢查區域部份。此拍攝處理的順序在後述之第2~4次的拍攝處理中亦相同。 Specifically, the light source 4a of the illumination device 4 is caused to emit light, the illumination of the light pattern is started, and the camera 5 is driven to start photographing the portion of the inspection region illuminated by the light pattern. The procedure of this photographing process is also the same in the second to fourth photographing processes to be described later.
接著,控制裝置6係在從拍攝開始經既定時間(本實施形態中為10msec)後的時序Ta2,結束第1次的拍攝處理。亦即,結束光圖案之照射,並結束與該光圖案有關之第1次的拍攝。此處,藉相機5所拍攝的影像資料係朝影像資料記憶裝置24轉送並被記憶(以下相同)。 Next, the control device 6 ends the first imaging process at the timing Ta2 after a predetermined time (10 msec in the present embodiment) from the start of imaging. That is, the irradiation of the light pattern is ended, and the first shot related to the light pattern is ended. Here, the image data taken by the camera 5 is transferred to the image data storage device 24 and memorized (the same applies hereinafter).
同時,控制裝置6係於時序Ta2開始照明裝置4的液晶格柵4b之切換處理。具體言之,開始將形成於液晶格柵4b的格柵的位置從基準位置(相位「0°」的位置)朝光圖案的相位是偏移4分之1間隔之相位「90°」的位置進行切換之處理。 At the same time, the control device 6 starts the switching process of the liquid crystal grid 4b of the illumination device 4 at the timing Ta2. Specifically, the position of the grid formed on the liquid crystal grid 4b is shifted from the reference position (the position of the phase "0°") toward the phase of the light pattern by the phase "90°" of the interval of one-fourth of the interval. The process of switching is performed.
接著,控制裝置6係在從液晶格柵4b之切換處理開始(時序Ta2)經既定時間(本實施形態中為20msec)後的時序Ta3,結束該切換處理。 Then, the control device 6 terminates the switching process at a timing Ta3 after a predetermined time (20 msec in the present embodiment) from the start of the switching process of the liquid crystal grid 4b (timing Ta2).
在液晶格柵4b之切換處理完了的同時,控制裝置6係於時序Ta3在相位「90°」的光圖案之下開始第2次的拍攝處理,在從拍攝開始經既定時間(本實施形態中 為10msec)後的時序Ta4,結束第2次的拍攝處理。 While the switching process of the liquid crystal grid 4b is completed, the control device 6 starts the second imaging process below the light pattern of the phase "90°" at the timing Ta3, and the predetermined time elapses from the start of imaging (in the present embodiment) At the timing Ta4 after 10 msec), the second shooting process is ended.
在第2次的拍攝處理結束的同時,控制裝置6係於時序Ta4開始照明裝置4的液晶格柵4b之切換處理。具體言之,開始將形成於照明裝置4的液晶格柵4b之格柵的位置從相位「90°」的位置朝光圖案的相位是偏移4分之1間隔之相位「180°」的位置進行切換之處理。 At the same time as the completion of the second imaging process, the control device 6 starts the switching process of the liquid crystal grid 4b of the illumination device 4 at the timing Ta4. Specifically, the position of the grid formed on the liquid crystal grid 4b of the illumination device 4 from the position of the phase "90°" toward the phase of the light pattern is shifted by a phase of "one-eighth" of the phase "180°". The process of switching is performed.
在液晶格柵4b之切換處理完了的同時,控制裝置6係於時序Ta5在相位「180°」的光圖案之下開始第3次的拍攝處理,在從拍攝開始經既定時間(本實施形態中為10msec)後的時序Ta6,結束第3次的拍攝處理。 While the switching process of the liquid crystal grid 4b is completed, the control device 6 starts the third imaging process below the light pattern of the phase "180°" at the timing Ta5, and the predetermined time elapses from the start of imaging (in the present embodiment) At the timing Ta6 after 10 msec), the third shooting process is ended.
同時,控制裝置6係於時序Ta6開始照明裝置4的液晶格柵4b之切換處理。具體言之,開始將形成於液晶格柵4b的格柵的位置從相位「180°」的位置朝光圖案的相位是偏移4分之1間隔之相位「270°」的位置進行切換之處理。 At the same time, the control device 6 starts the switching process of the liquid crystal grid 4b of the illumination device 4 at the timing Ta6. Specifically, the position of the grid formed on the liquid crystal grid 4b is switched from the position of the phase "180°" to the position of the phase of the light pattern shifted by one-fourth of the interval "270°". .
其次,控制裝置6係在從液晶格柵4b之切換處理開始(時序Ta6)經既定時間(本實施形態中為20msec)後的時序Ta7,結束該切換處理。 Then, the control device 6 ends the switching process by the timing Ta7 after the switching process of the liquid crystal grid 4b (timing Ta6) has elapsed for a predetermined time (20 msec in the present embodiment).
在液晶格柵4b之切換處理完了的同時,控制裝置6係於時序Ta7在相位「270°」的光圖案之下開始第4次的拍攝處理,在從拍攝開始經既定時間(本實施形態中為10msec)後的時序Ta8,結束第4次的拍攝處理。 While the switching process of the liquid crystal grid 4b is completed, the control device 6 starts the fourth imaging process below the light pattern of the phase "270°" at the timing Ta7, and the predetermined time elapses from the start of imaging (in the present embodiment) At the timing Ta8 after 10 msec), the fourth shooting process is ended.
如此,透過進行上述一連串的拍攝處理,取得在4種相位變化的光圖案之下分別所拍攝之4個畫面份量的影像資料。 In this manner, by performing the series of photographing processes described above, image data of four screen sizes captured under four kinds of phase-change light patterns are obtained.
另一方面,於步驟S101,在判別檢查區域內未含有滿足前述判定條件的銲膏之情況,移至步驟S103,針對此檢查區域利用2次拍攝方式取得影像資料。亦即,取得以2種的相位照射、拍攝光圖案所得之2種的影像資料。 On the other hand, in step S101, if the solder paste satisfying the above-described determination condition is not included in the discrimination inspection region, the process proceeds to step S103, and the image data is acquired by the secondary imaging method for the inspection region. In other words, two types of image data obtained by irradiating two types of phases and photographing a light pattern are obtained.
更詳言之,控制裝置6係首先切換控制照明裝置4的液晶格柵4b,將形成於該液晶格柵4b的格柵的位置設定在既定的基準位置(相位「0°」的位置)。 More specifically, the control device 6 first switches the liquid crystal grid 4b that controls the illumination device 4, and sets the position of the grid formed on the liquid crystal grid 4b at a predetermined reference position (a position of phase "0°").
當液晶格柵4b的切換設定完成時,控制裝置6係於既定的時序Tc1在相位「0°」的光圖案之下開始第1次的拍攝處理〔參照圖8(c)〕。 When the switching setting of the liquid crystal grid 4b is completed, the control device 6 starts the first imaging processing under the light pattern of the phase "0°" at a predetermined timing Tc1 (see FIG. 8(c)).
具體言之,使照明裝置4的光源4a發光,開始光圖案的照射,並驅動控制相機5,開始拍攝照射有該光圖案之檢查區域部份。此拍攝處理的順序在後述之第2次的拍攝處理中亦相同。 Specifically, the light source 4a of the illumination device 4 is caused to emit light, the illumination of the light pattern is started, and the camera 5 is driven to start photographing the portion of the inspection region to which the light pattern is irradiated. The procedure of this photographing process is also the same in the second photographing processing to be described later.
接著,控制裝置6係在從拍攝開始經既定時間(本實施形態中為10msec)後的時序Tc2,結束第1次的拍攝處理。亦即,結束光圖案之照射,並結束與該光圖案有關之第1次的拍攝。此處,藉相機5所拍攝的影像資料係朝影像資料記憶裝置24轉送並被記憶(以下同樣)。 Next, the control device 6 ends the first imaging process at the timing Tc2 after a predetermined time (10 msec in the present embodiment) from the start of imaging. That is, the irradiation of the light pattern is ended, and the first shot related to the light pattern is ended. Here, the image data taken by the camera 5 is transferred to the image data storage device 24 and memorized (the same applies hereinafter).
同時,控制裝置6係於時序Tc2開始照明裝置4的液晶格柵4b之切換處理。具體言之,開始將形成於液晶格柵4b的格柵的位置從基準位置(相位「0°」的位置)朝光圖案的相位是偏移2分之1間隔之相位「180°」的位置進行切換之處理。 At the same time, the control device 6 starts the switching process of the liquid crystal grid 4b of the illumination device 4 at the timing Tc2. Specifically, the position of the grid formed on the liquid crystal grid 4b is shifted from the reference position (the position of the phase "0°") toward the phase of the light pattern by the phase "180°" of the interval of one-half of the interval. The process of switching is performed.
接著,控制裝置6係在從液晶格柵4b之切換處理開始(時序Tc2)經既定時間(本實施形態中為20msec)後的時序Tc3,結束該切換處理。 Then, the control device 6 ends the switching process after the predetermined time (20 msec in the present embodiment) from the start of the switching process of the liquid crystal grid 4b (timing Tc2).
在液晶格柵4b之切換處理完了的同時,控制裝置6係於時序Tc3在相位「180°」的光圖案之下開始第2次的拍攝處理,在從拍攝開始經既定時間(本實施形態中為10msec)後的時序Tc4,結束第2次的拍攝處理。 While the switching process of the liquid crystal grid 4b is completed, the control device 6 starts the second imaging process below the light pattern of the phase "180°" at the timing Tc3, and the predetermined time elapses from the start of imaging (in the present embodiment) At the timing Tc4 after 10 msec), the second shooting process is ended.
如此,透過進行上述一連串的拍攝處理,取得在2種相位變化的光圖案之下分別所拍攝之2個畫面份量的影像資料。 In this way, by performing the above-described series of photographing processes, image data of two screen sizes captured under two kinds of phase-changing light patterns are obtained.
此處舉出具體例作說明。例如在圖7所例示的印刷基板2中,與構裝作為既定的判定條件之BGA或SOP、QFP等之電子零件的較小尺寸的銲墊(省略圖示)相對應地印刷較小尺寸的銲膏Js,並與構裝電阻或電容器、電晶體等之電子零件的較大尺寸的銲墊(省略圖示)相對應地印刷較大尺寸的銲膏Jb。 Specific examples are given here for explanation. For example, in the printed circuit board 2 illustrated in FIG. 7 , a small-sized pad (not shown) of an electronic component such as a BGA or SOP or QFP that is a predetermined determination condition is printed in a small size. The solder paste Js is printed with a solder paste Jb of a larger size in correspondence with a large-sized pad (not shown) of an electronic component such as a resistor or a capacitor or a transistor.
因此,關於在此印刷基板2中僅含有滿足既定的判定條件之較小尺寸的銲膏Js之檢查區域W1、以及含有滿足前述判定條件之較小尺寸的銲膏Js及未滿足前述判定條件之較大尺寸的銲膏Jb之檢查區域W2,係利用4次拍攝方式取得影像資料。另一方面,關於未含有滿足前述判定條件之較小尺寸的銲膏Js而僅含有未滿足前述判定條件之較大尺寸的銲膏Jb之檢查區域W3、W4,係利用2次拍攝方式取得影像資料。 Therefore, the printed circuit board 2 includes only the inspection region W1 of the solder paste Js having a small size satisfying the predetermined determination condition, and the solder paste Js having a smaller size satisfying the above-described determination conditions, and the above-mentioned determination conditions are not satisfied. The inspection area W2 of the larger-sized solder paste Jb is obtained by using four times of shooting. On the other hand, the inspection areas W3 and W4 of the solder paste Jb having a large size that does not satisfy the above-described determination conditions are contained in the solder paste Js which does not satisfy the above-described determination condition, and the image is acquired by the second shot method. data.
接著,控制裝置6係於步驟S104,依據在上述 步驟S102或步驟S103所取得之影像資料藉由移相法進行三維測量(高度測量)。 Next, the control device 6 is in step S104, according to the above The image data obtained in step S102 or step S103 is subjected to three-dimensional measurement (height measurement) by a phase shift method.
首先針對於步驟S102取得4種的影像資料之情況作說明。控制裝置6係利用移相法由上述4種的影像資料(各畫素的輝度值)算出各畫素之光圖案的相位θ1。 First, the case where four types of video data are acquired in step S102 will be described. The control device 6 calculates the phase θ 1 of the light pattern of each pixel from the above-described four kinds of video data (luminance values of the respective pixels) by the phase shift method.
此處,關於上述4種的影像資料之各畫素的輝度值V10、V11、V12、V13係可利用下述式(H1')、(H2')、(H3')、(H4')表示。4種的影像資料之各畫素的輝度值 Here, the luminance values V 10 , V 11 , V 12 , and V 13 of the respective pixels of the above-described four types of video data can be expressed by the following equations (H1 ' ), (H2 ' ), (H3 ' ), ( H4 ' ) indicates. Brightness values of each pixel of four kinds of image data
V10=Asinθ 1+B‧‧‧(H1′) V 10 =Asin θ 1 +B‧‧‧(H1')
V11=Asin(θ 1+90°)+B=Acosθ 1+B‧‧‧(H2′) V 11 =Asin( θ 1 +90°)+B=Acos θ 1 +B‧‧‧(H2')
V12=Asin(θ 1+180°)+B=-Asinθ 1+B‧‧‧(H3′) V 12 =Asin( θ 1 +180°)+B=-Asin θ 1 +B‧‧‧(H3')
V13=Asin(θ 1+270°)+B=-Acosθ 1+B‧‧‧(H4′) V 13 =Asin( θ 1 +270°)+B=-Acos θ 1 +B‧‧‧(H4')
其中,A:增益、B:偏移量 Where A: gain, B: offset
當將上述式(H1')、(H2')、(H3')、(H4')針對相位θ1求解時,可導出下述式(H11)。 When the above formula (H1 '), (H2' ), (H3 '), (H4') to solve for the phase θ 1, can be derived by the following formula (H11).
θ 1=tan-1{(V10-V12)/(V11-V13)}‧‧(H11) θ 1 =tan -1 {(V 10 -V 12 )/(V 11 -V 13 )}‧‧(H11)
接著,控制裝置6係將上述那樣算出的各畫素的相位θ1與記憶在上述設定資料記憶裝置26的校正資料(基於校正之各畫素的相位)作比較,算出具有同一相位的畫素之偏移量,依據三角測量原理,算出檢查區域的各畫素(x,y)的高度資料(z),將此高度資料(z)記憶在演算結果記憶裝置25。 Next, the control device 6 compares the phase θ 1 of each pixel calculated as described above with the correction data stored in the set data storage device 26 (based on the phase of each pixel corrected), and calculates pixels having the same phase. The offset amount is calculated based on the triangulation principle, and the height data (z) of each pixel (x, y) of the inspection region is calculated, and the height data (z) is stored in the calculation result memory device 25.
例如,在被測量畫素(x,y)中之實測值(相位)為「10°」的情況,檢出該「10°」的值是位在藉校正所 記憶之資料上的哪個位置。此處,若在與被測量畫素(x,y)相鄰3個畫素處存在有「10°」,則其意味著光圖案的條紋偏移3個畫素。而且,依據光圖案的照射角度和光圖案的條紋之偏移量,利用三角測量原理可求出被測量畫素(x,y)的高度資料(z)。 For example, when the measured value (phase) in the measured pixel (x, y) is "10°", the value of "10°" is detected. Which position on the data of the memory. Here, if "10°" exists in three pixels adjacent to the pixel (x, y) to be measured, it means that the stripe of the light pattern is shifted by three pixels. Further, the height data (z) of the measured pixel (x, y) can be obtained by the triangulation principle according to the irradiation angle of the light pattern and the offset amount of the stripe of the light pattern.
其次,針對於步驟S103取得2種的影像資料之情況作說明。控制裝置6係利用移相法依據上述2種的影像資料(各畫素的輝度值)和記憶在上述設定資料記憶裝置26之校正資料(基於校正之各畫素的比例常數K),算出各畫素之光圖案的相位θ2。 Next, a case where two kinds of video data are acquired in step S103 will be described. The control device 6 calculates each of the two kinds of video data (the luminance value of each pixel) and the correction data (based on the corrected proportional constant K of each pixel) of the above-described setting data storage device 26 by the phase shift method. The phase θ 2 of the light pattern of the pixel.
此處,在設成上述2種的影像資料之各畫素的輝度值V20、V21之情況,各畫素的光圖案的相位θ2可依據上述式(15)利用下述式(H12)表示。 Here, in the case where the luminance values V 20 and V 21 of the respective pixels of the two kinds of video data are set, the phase θ 2 of the light pattern of each pixel can be expressed by the following formula (H12) according to the above formula (15). ) said.
θ2=sin-1[(V20-V21)/K(V20+V21)]...(H12) θ 2 =sin -1 [(V 20 -V 21 )/K(V 20 +V 21 )]...(H12)
其中,K:比例常數。 Where K: the proportional constant.
接著,控制裝置6係和上述同樣,將如此算出的各畫素的相位θ2與記憶在上述設定資料記憶裝置26的校正資料(基於校正之各畫素的相位)作比較,算出具有同一相位的畫素之偏移量,依據三角測量原理,算出檢查區域的各畫素(x,y)的高度資料(z),將此高度資料(z)記憶在演算結果記憶裝置25。 Next, the control device 6 compares the phase θ 2 of each pixel thus calculated with the correction data stored in the set data storage device 26 (based on the phase of each pixel corrected), and calculates the same phase. The offset of the pixel is calculated based on the triangulation principle, and the height data (z) of each pixel (x, y) of the inspection region is calculated, and the height data (z) is stored in the calculation result memory device 25.
其次,控制裝置6係於步驟S105,依據上述步驟S104的三維測量結果(在各座標之高度資料),進行銲膏的良否判定處理。具體言之,控制裝置6係依據上述那樣獲得之檢查區域的測量結果,檢出高於基準面的銲膏 之印刷範圍,藉由將此範圍內之各部位的高度積分,算出所印刷之銲膏的量。 Next, in step S105, the control device 6 performs the solder paste quality determination process based on the three-dimensional measurement result (the height data of each coordinate) in the above step S104. Specifically, the control device 6 detects the solder paste higher than the reference surface based on the measurement result of the inspection region obtained as described above. The printing range is calculated by integrating the heights of the respective parts in the range to calculate the amount of solder paste to be printed.
接著,控制裝置6係將如此求得之銲膏的位置、面積、高度或量等的資料與預先記憶在設定資料記憶裝置26的基準資料(封面資料等)作比較判定,依此比較結果是否在容許範圍內,判定在其檢查區域中之銲膏的印刷狀態之良否。 Next, the control device 6 compares the data such as the position, area, height, or amount of the solder paste thus obtained with the reference data (cover data, etc.) stored in advance in the setting data storage device 26, and accordingly, whether the comparison result is Within the allowable range, it is judged whether or not the printed state of the solder paste in the inspection area is good or not.
在進行此處理之期間,控制裝置6係驅動控制馬達15、16使印刷基板2朝下一檢查區域移動,之後,上述一連串的處理在全部的檢查區域反複被進行,而結束印刷基板2全體的檢查。 While this process is being performed, the control device 6 drives the control motors 15 and 16 to move the printed circuit board 2 toward the next inspection region. Thereafter, the series of processes are repeatedly performed in all the inspection regions, and the entire printed circuit board 2 is finished. an examination.
如以上所詳述,依據本實施形態,針對含有滿足既定的判定條件(例如大小是小於既定值)的銲膏之檢查區域,利用4次拍攝方式取得影像資料並高精度執行三維測量,另一方面,針對其以外的檢查區域,藉由利用2次拍攝方式取得影像資料,能以更短時間執行三維測量。 As described in detail above, according to the present embodiment, the image data is acquired by the four-shot method and the three-dimensional measurement is performed with high precision, and the inspection region including the solder paste that satisfies the predetermined determination condition (for example, the size is smaller than the predetermined value). On the other hand, in the inspection area other than the inspection area, the three-dimensional measurement can be performed in a shorter time by acquiring the image data by the two-time imaging method.
結果,在利用移相法進行三維測量時,可謀求維持滿足既定的判定條件的銲膏(需高精度測量之銲膏)必要的測量精度並提升測量速度。 As a result, in the three-dimensional measurement by the phase shift method, it is possible to maintain the measurement accuracy necessary for the solder paste (the solder paste requiring high-precision measurement) that satisfies the predetermined determination conditions and to increase the measurement speed.
又,本實施形態建構成:針對未含有滿足既定的判定條件的銲膏之檢查區域,透過利用藉既定的拍攝條件所決定之增益A及偏移量B的關係〔例如A=K(比例常數)×B〕和由影像資料上之各畫素(x,y)的輝度值V(x,y)所決定之該畫素(x,y)的增益A(x,y)或偏移量B(x,y)的值 ,依據藉2次拍攝方式所取得之影像資料且利用移相法進行高度測量。 Further, in the present embodiment, the relationship between the gain A and the offset B determined by the predetermined imaging conditions is used for the inspection region in which the solder paste that does not satisfy the predetermined determination condition is included (for example, A = K (proportional constant) ) × B] and the gain A(x, y) or offset of the pixel (x, y) determined by the luminance value V(x, y) of each pixel (x, y) on the image data. B(x,y) value According to the image data obtained by the two-time shooting method and the height measurement by the phase shift method.
藉此,可更縮短迄至既定的檢查區域之全部的拍攝處理(最後的拍攝處理)終了為止所需的時間。如圖8(c)所示,2次拍攝方式的情況,迄至既定的檢查區域之全部的拍攝處理終了為止所需的時間係成為〔拍攝處理所需的時間[10ms]×2次〕+〔液晶格柵4b之切換處理所需的時間[20ms]×1次〕=合計[40msec]。 Thereby, it is possible to shorten the time required until the end of all the photographing processing (final photographing processing) up to the predetermined inspection area. As shown in Fig. 8(c), in the case of the secondary imaging method, the time required until the end of all the imaging processing in the predetermined inspection area is [the time required for the imaging processing [10 ms] × 2 times] + [Time required for switching processing of the liquid crystal grid 4b [20 ms] × 1 time] = total [40 msec].
〔第2實施形態〕 [Second Embodiment]
以下,針對第2實施形態一邊參照圖面一邊作說明。此外,針對和第1實施形態相同構成部份,賦予相同符號,省略其詳細的說明。 Hereinafter, the second embodiment will be described with reference to the drawings. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.
上述第1實施形態雖建構成:將各畫素中之光圖案的增益A及偏移量B的關係(比例常數K)透過預先校正(於4種相位變化的光圖案之下分別拍攝之4種的影像資料)而求取,但取而代之的是,第2實施形態建構成:光圖案的增益A及偏移量B的關係(比例常數K)係在利用2次拍攝方式另外進行測量時(實測時),依據在2種相位變化的光圖案之下分別所拍攝的2種的影像資料來求取。 In the first embodiment described above, the relationship between the gain A and the offset B of the light pattern in each pixel (proportional constant K) is transmitted in advance (four images are taken under the light patterns of the four phase changes). Instead, the second embodiment is constructed such that the relationship between the gain A of the light pattern and the offset B (proportional constant K) is measured by the second-time imaging method ( In actual measurement, it is obtained based on two types of image data taken under two kinds of phase-changing light patterns.
在其順序方面,首先使用上述式(12)針對影像資料的全畫素求出偏移量B。接著,抽出其中偏移量B的值為一致的畫素之輝度值V(=Asinθ+B),作成其直方圖。其一例顯示在圖9、10的表。其中,圖9、10係例示將增益A設為「1」、偏移量B設為「0」之情況。圖9係將輝度值V劃分成「0.1」寬度的資料區間,表示其資料 區間所含之輝度值數的分布表,圖10係將其繪製的直方圖。 In terms of the order, the offset B is first obtained for the full pixel of the image data using the above formula (12). Next, the luminance value V (= Asin θ + B) of the pixel in which the value of the offset B is uniform is extracted, and a histogram is created. An example of this is shown in the tables of Figs. In addition, FIGS. 9 and 10 illustrate a case where the gain A is set to "1" and the offset amount B is set to "0". Figure 9 is a data interval in which the luminance value V is divided into "0.1" widths, indicating the data. A distribution table of the number of luminance values included in the interval, and FIG. 10 is a histogram plotted.
接著,依據此直方圖決定輝度值的最大值VMAX與最小值VMIN。藉由利用「sinθ」的特性,可將於上述直方圖中產生的2個波峰分別決定為輝度值的最大值VMAX和最小值VMIN。在圖9、10所示的例子中,輝度值V進到「-1.0~-0.9」及「0.9~1.0」的資料區間之輝度值V的個數分別成為「51」,在此成為2個波峰。 Next, the maximum value V MAX of the luminance value and the minimum value V MIN are determined according to the histogram. By using the characteristic of "sin θ", the two peaks generated in the above histogram can be determined as the maximum value V MAX and the minimum value V MIN of the luminance value, respectively. In the example shown in FIGS. 9 and 10, the number of luminance values V in the data interval in which the luminance value V has entered "-1.0 to -0.9" and "0.9 to 1.0" is "51", and becomes two here. crest.
接著,依據輝度值的最大值VMAX和最少值VMIN算出增益A及偏移量B。如上述,輝度值的最大值VMAX和最少值VMIN的平均值成為偏移量B,最大值VMAX與最少值VMIN之差的一半成為增益A。亦即,如圖9所示,2個波峰的中間值成為偏移量B,2個波峰的寬度一半成為增益A。 Next, the gain A and the offset B are calculated based on the maximum value V MAX of the luminance value and the minimum value V MIN . As described above, the average value of the maximum value V MAX and the minimum value V MIN of the luminance value becomes the offset amount B, and half of the difference between the maximum value V MAX and the minimum value V MIN becomes the gain A. That is, as shown in FIG. 9, the intermediate value of the two peaks is the offset B, and the half of the width of the two peaks becomes the gain A.
依據如此獲得之增益A與偏移量B的值可決定比例常數K〔參照上述式(3)〕。因此,藉由用以決定比例常數K的上述一連串處理機能來構成本實施形態中之關係掌握手段。 The proportional constant K can be determined based on the values of the gain A and the offset B thus obtained (refer to the above formula (3)). Therefore, the relationship grasping means in the present embodiment is constructed by the above-described series of processing functions for determining the proportionality constant K.
依據本實施形態,可達成與上述第1實施形態同樣的作用效果。又可省略上述第1實施形態那樣的校正的功夫,可謀求更縮短測量時間。 According to this embodiment, the same operational effects as those of the first embodiment described above can be achieved. Further, the correction work as in the first embodiment described above can be omitted, and the measurement time can be further shortened.
此外,本實施形態中,成為依據在相位差180°的2種的光圖案之下分別所拍攝之2種的影像資料,針對影像資料的全畫素求出比例常數K等之構成,但不受此所限,亦可建構成:例如依據在相位差90°的2種的光圖案 之下分別所拍攝之2種的影像資料求出比例常數K等。又,亦可建構成:不在影像資料的全畫素而在被測量畫素之周邊等影像資料的一部份的範圍,求出比例常數K等。 Further, in the present embodiment, the video data of the two types of light images captured under the two types of light patterns having a phase difference of 180° are obtained, and the proportional constant K and the like are obtained for the full pixels of the image data. Due to this limitation, it can also be constructed: for example, according to two kinds of light patterns with a phase difference of 90°. The two types of image data taken below are used to obtain a proportional constant K and the like. Further, it is also possible to construct a proportional constant K or the like in a range of a part of the image data such as the periphery of the pixel to be measured, not in the full pixel of the image data.
此外,不受上述實施形態的記載內容所限定,例如亦可如次般地實施。當然,以下未例示的其他應用例、變更例亦可。 Further, it is not limited to the description of the above embodiment, and may be implemented, for example, as follows. Of course, other application examples and modifications not illustrated below may be used.
(a)上述實施形態中,將三維測量裝置具體化成用以測量被印刷形成於印刷基板2上之銲膏的高度之基板檢查裝置1,但不受此所限,例如亦可具體化成用以測量印刷於基板上的銲料凸塊或構裝於基板上的電子零件等其他者的高度之構成。 (a) In the above embodiment, the three-dimensional measuring device is embodied as a substrate inspecting device 1 for measuring the height of the solder paste formed on the printed circuit board 2. However, the present invention is not limited thereto, and may be embodied, for example. The height of the solder bump printed on the substrate or the electronic component mounted on the substrate is measured.
(b)上述實施形態中,將用以將源自光源4a的光變換成條紋狀的光圖案之格柵利用液晶格柵4b來構成,並建構成透過對其切換控制而使光圖案的相位偏移之構成。但不受此所限,亦可建構成:例如利用壓電致動器等之移送手段移送格柵構件,使光圖案的相位偏移。 (b) In the above embodiment, the grid for converting the light from the light source 4a into the stripe pattern is formed by the liquid crystal grid 4b, and the phase of the light pattern is controlled by switching control thereof. The composition of the offset. However, it is not limited thereto, and it is also possible to transfer the grating member by a transfer means such as a piezoelectric actuator to shift the phase of the light pattern.
(c)上述實施形態中,建構成:針對含有滿足既定的判定條件的銲膏之檢查區域,依據在相位各差90°的4種的光圖案之下分別所拍攝之4種的影像資料進行三維測量,針對未含有滿足前述判定條件的銲膏之檢查區域,依據在相位各差180°的2種的光圖案之下分別所拍攝之2種的影像資料進行三維測量。 (c) In the above-described embodiment, the inspection area including the solder paste satisfying the predetermined determination condition is based on four types of image data captured under four kinds of light patterns having a phase difference of 90 degrees. In the three-dimensional measurement, the inspection area of the solder paste which does not satisfy the above-described determination conditions is subjected to three-dimensional measurement based on two kinds of image data respectively taken under two kinds of light patterns having a phase difference of 180°.
不受此所限,亦可建構成:例如針對含有滿足既定的判定條件的銲膏之檢查區域,依據在相位各差90°的4種的光圖案之下分別所拍攝之4種的影像資料進 行三維測量,針對未含有滿足前述判定條件的銲膏之檢查區域,依據在相位各差120°(或90°)的3種的光圖案之下分別所拍攝之3種的影像資料進行三維測量。 Without being limited to this, it is also possible to construct, for example, four types of image data which are respectively photographed under four kinds of light patterns having a phase difference of 90° for an inspection region containing a solder paste satisfying a predetermined determination condition. Enter Three-dimensional measurement, three-dimensional measurement based on three types of image data taken under three kinds of light patterns with 120° (or 90°) phase difference for an inspection area that does not contain the solder paste satisfying the above-mentioned determination conditions .
又,亦可建構成:針對含有滿足既定的判定條件的銲膏之檢查區域,依據在相位各差120°(或90°)的3種的光圖案之下分別所拍攝之3種的影像資料進行三維測量,針對未含有滿足前述判定條件的銲膏之檢查區域,依據在相位各差180°(或90°)的2種的光圖案之下分別所拍攝之2種的影像資料進行三維測量。 Further, it is also possible to construct three kinds of image data which are respectively photographed under three kinds of light patterns having a phase difference of 120 (or 90) for an inspection region containing a solder paste satisfying a predetermined determination condition. Three-dimensional measurement is performed, and three-dimensional measurement is performed on two types of image data taken under two kinds of light patterns having 180° (or 90°) phase difference for an inspection area that does not contain the solder paste satisfying the above-described determination conditions. .
當然,相位偏移量係不受上述例示的各種偏移量所限定,亦能採用可藉由移相法進行三維測量之其他的偏移量。 Of course, the phase shift amount is not limited by the various offsets exemplified above, and other offsets that can be three-dimensionally measured by the phase shift method can also be used.
(d)上述實施形態中雖建構成:以針對含有滿足既定的判定條件的銲膏之檢查區域,利用4次拍攝方式進行三維測量、針對未含有滿足前述判定條件的銲膏之檢查區域,利用2次拍攝方式進行三維測量那樣將拍攝方式作2階段切換,但不受此所限,亦可作成將拍攝方式作3階段切換之構成。 (d) In the above-described embodiment, the inspection region including the solder paste that satisfies the predetermined determination condition is three-dimensionally measured by the four-shot imaging method, and the inspection region that does not contain the solder paste that satisfies the above-described determination condition is used. In the case of performing the three-dimensional measurement in the two-shot mode, the shooting mode is switched in two stages, but it is not limited thereto, and the shooting mode can be switched in three stages.
例如亦可建構成:使用圖11所示的條件設定畫面330,在檢查區域內含有滿足既定的判定條件(例如於圖11中的中精度測量欄331所設定之條件)中之特定條件(例如於圖11中的高精度測量欄332所設定之條件)的銲膏之情況,利用4次拍攝方式(以4種的相位照射、拍攝光圖案)取得4種的影像資料,而在檢查區域內含有滿足前述判定條件的銲膏但未含有滿足前述特定條件的銲膏 之情況,利用3次拍攝方式(以3種的相位照射、拍攝光圖案)取得3種的影像資料,在檢查區域內未含有滿足前述判定條件的銲膏之情況,利用2次拍攝方式(以2種的相位照射、拍攝光圖案)取得2種的影像資料。 For example, a condition setting screen 330 shown in FIG. 11 may be used, and a specific condition (for example, a condition set in the medium accuracy measurement column 331 in FIG. 11) that satisfies a predetermined determination condition (for example, a condition set in the middle accuracy measurement column 331 in FIG. 11) is included in the inspection area (for example, In the case of the solder paste in the condition set by the high-precision measurement column 332 in FIG. 11 , four kinds of image data are acquired by four imaging methods (four kinds of phase irradiation and imaging light pattern), and are in the inspection area. Contains solder paste that satisfies the above-mentioned determination conditions but does not contain solder paste that satisfies the aforementioned specific conditions In the case of three types of image data (three kinds of phase irradiation and photographing light pattern), three kinds of image data are obtained, and in the inspection area, the solder paste that satisfies the above-described determination condition is not included, and the two-time imaging method is used. Two kinds of phase illumination and photographing light patterns are used to obtain two types of image data.
例如,此處在將『「體積」是小於「2mm3」』設為「判定條件」、『「體積」是小於「1mm3」』設為「特定條件」之情況,於『「體積」是小於「1mm3」』的銲膏未包含在檢查區域內之情況,利用4次拍攝方式取得影像資料,於檢查區域內含有滿足『「體積」是小於「2mm3」』的銲膏但未含有滿足『「體積」是小於「1mm3」』的銲膏之情況,利用3次拍攝方式取得影像資料,而於檢查區域內未含有滿足『「體積」是小於「2mm3」』的銲膏之情況,利用2次拍攝方式取得影像資料。 For example, in the case where "volume is less than "2mm 3 " is set to "judgment condition", "volume is less than "1mm 3 "" is set to "specific condition", and "volume" is When the solder paste of less than "1mm 3 " is not included in the inspection area, the image data is acquired by four shots, and the solder paste containing "the volume" is less than "2mm 3 " is included in the inspection area but does not contain When the "volume" is less than "1mm 3 ", the image data is obtained by three shots, and the solder paste that satisfies "the volume is less than "2mm 3 " is not included in the inspection area. In the case, the image data is obtained by using two shooting methods.
(e)上述實施形態中建構成:針對含有滿足判定條件的銲膏(例如圖7的銲膏Js)與未滿足判定條件的銲膏(例如圖7的銲膏Jb)兩者之檢查區域(例如圖7的檢查區域W2),在已取得於相位相異的4種的光圖案之下分別所拍攝之4種的影像資料之情況,該檢查區域內之兩銲膏(例如圖7的銲膏Js、Jb)都依據4種的影像資料進行三維測量。 (e) In the above-described embodiment, the inspection area is included in the solder paste (for example, the solder paste Js of FIG. 7) that satisfies the determination condition and the solder paste (for example, the solder paste Jb of FIG. 7) that does not satisfy the determination condition ( For example, in the inspection area W2 of FIG. 7 , in the case of four kinds of image data captured under four kinds of light patterns having different phases, two solder pastes in the inspection area (for example, the welding of FIG. 7 ) The pastes Js and Jb) are based on four kinds of image data for three-dimensional measurement.
不受此所限,亦可建構成:例如針對含有滿足判定條件的銲膏(例如圖7的銲膏Js)與未滿足判定條件的銲膏(例如圖7的銲膏Jb)兩者之檢查區域(例如圖7的檢查區域W2),在已取得於相位相異的4種的光圖案之下分別所拍攝之4種的影像資料之情況,針對該檢查區域內滿 足判定條件的銲膏(例如圖7的銲膏Js),依據4種的影像資料進行三維測量,針對該檢查區域內未滿足判定條件的銲膏(例如圖7的銲膏Jb),依據所拍攝之4種的影像資料中的2種或3種的影像資料進行三維測量。 Without being limited thereto, it is also possible to construct, for example, an inspection for both a solder paste (for example, solder paste Js of FIG. 7) satisfying the determination condition and a solder paste (for example, solder paste Jb of FIG. 7) that does not satisfy the determination condition. In the region (for example, the inspection region W2 in FIG. 7), in the case where four kinds of image data respectively captured under four kinds of light patterns having different phases are obtained, the inspection region is full. The solder paste for the determination condition (for example, the solder paste Js of FIG. 7) is three-dimensionally measured based on the four types of image data, and the solder paste (for example, the solder paste Jb of FIG. 7) that does not satisfy the determination condition in the inspection area is used. Two or three kinds of image data of four types of image data were taken for three-dimensional measurement.
依據此構成,針對未滿足既定的判定條件的銲膏(測量精度無需那樣程度之銲膏),可依據更少的影像資料以更短時間進行三維測量。結果,可謀求更提升測量速度。 According to this configuration, for the solder paste that does not satisfy the predetermined determination condition (the measurement accuracy does not require such a degree of solder paste), the three-dimensional measurement can be performed in a shorter time based on less image data. As a result, it is possible to further increase the measurement speed.
又,亦可將在取得4種的影像資料之情況中針對「未滿足既定的判定條件的銲膏(例如圖7的銲膏Jb)」之測量精度、和在依據利用2次或3次拍攝方式所取得之2種或3種的影像資料進行三維測量之情況中針對「未滿足既定的判定條件的銲膏(例如圖7的銲膏Jb)」之測量精度設為同等。 In addition, in the case of obtaining four kinds of video data, the measurement accuracy of the solder paste (for example, the solder paste Jb of FIG. 7) that does not satisfy the predetermined determination condition can be used, and the second or third shot can be used according to the use. In the case of performing three-dimensional measurement of two or three kinds of image data obtained by the method, the measurement accuracy of the solder paste (for example, the solder paste Jb of FIG. 7) that does not satisfy the predetermined determination conditions is equivalent.
當然,針對含有滿足判定條件的銲膏(例如圖7的銲膏Js)與未滿足判定條件的銲膏(例如圖7的銲膏Jb)兩者之檢查區域(例如圖7的檢查區域W2),於取得在相位相異的3種的光圖案之下分別所拍攝之3種的影像資料之情況也可設為同樣的構成。 Of course, for an inspection region including a solder paste (for example, solder paste Js of FIG. 7) satisfying the determination condition and a solder paste (for example, solder paste Jb of FIG. 7) that does not satisfy the determination condition (for example, inspection region W2 of FIG. 7) The same configuration may be employed in the case of obtaining three types of image data respectively captured under three kinds of light patterns having different phases.
又,亦可建構成:在將上述(d)所例示之拍攝方式作3階段切換的構成之下,於利用4次拍攝方式取得4種的影像資料之情況,針對檢查區域內滿足特定條件(例如『「體積」是小於「1mm3」』)的銲膏,依據4種的影像資料利用移相法進行三維測量,針對檢查區域內未滿足前述特定條件且滿足判定條件(例如『「體積」是小 於「2mm3」』)的銲膏,依據所取得之4種的影像資料中之3種的影像資料利用移相法進行三維測量,針對檢查區域內未滿足前述判定條件的銲膏,依據所取得之4種的影像資料中之2種的影像資料利用移相法進行三維測量,在利用3次拍攝方式取得3種的影像資料之情況,針對檢查區域內滿足前述判定條件的銲膏,依據3種的影像資料利用移相法進行三維測量,針對檢查區域內未滿足前述判定條件的銲膏,依據所取得之3種的影像資料中的2種的影像資料利用移相法進行三維測量。 Further, in a configuration in which the imaging method exemplified in the above (d) is switched in three stages, when four kinds of video data are acquired by four imaging methods, specific conditions are satisfied in the inspection area ( For example, the "volume" is less than "1mm 3 ".) The three-dimensional measurement is performed by the phase shift method based on the four kinds of image data. The specific conditions are not met in the inspection area and the judgment conditions are satisfied (for example, "volume" Solder paste which is less than "2mm 3 ")), based on the image data of three of the four kinds of image data obtained, three-dimensional measurement by the phase shift method, and the solder paste which does not satisfy the above-mentioned determination conditions in the inspection area is based on The image data of two of the four kinds of image data obtained are three-dimensionally measured by the phase shift method, and three types of image data are obtained by three times of shooting, and the solder paste that satisfies the above-described determination conditions in the inspection area is used. According to the three kinds of image data, the three-dimensional measurement is performed by the phase shift method, and the solder paste that does not satisfy the above-mentioned determination conditions in the inspection area is based on two kinds of images of the three types of image data obtained. Material dimensional measurement method using a phase shift.
(f)上述實施形態中建構成:透過條件設定畫面230設定判定條件,但條件設定手段的構成係不受此所限定。 (f) In the above-described embodiment, the determination condition is set on the transmission condition setting screen 230, but the configuration of the condition setting means is not limited thereto.
亦可建構成:例如經由圖12所示的條件設定畫面350設定判定條件。在條件設定畫面350中,藉由將滑桿351左右地滑動操作,可變更作為判定條件的銲膏之體積值。此外,滑桿351係為模擬顯示於顯示裝置23的滑桿之影像,可透過觸控面板操作。 It is also possible to construct a determination condition by, for example, the condition setting screen 350 shown in FIG. In the condition setting screen 350, by sliding the slide bar 351 to the left and right, the volume value of the solder paste as the determination condition can be changed. In addition, the slider 351 is an image simulating the slider displayed on the display device 23, and is operable through the touch panel.
此處,針對操作滑桿351所設定之含有小於既定值的體積的銲膏之檢查區域,利用4次拍攝方式進行三維測量,針對未含有前述小於既定值的體積的銲膏之檢查區域,利用2次拍攝方式進行三維測量。 Here, the inspection region of the solder paste containing the volume smaller than the predetermined value set by the operation slider 351 is three-dimensionally measured by the four-shot imaging method, and is used for the inspection region of the solder paste not containing the volume smaller than the predetermined value. 2 shots for 3D measurement.
圖12中,例如當將滑桿351移到右端時,作為判定條件的銲膏之體積值成為最大值。亦即,印刷基板2上的全部的銲膏成為滿足判定條件,成為針對全部的檢查區域利用4次拍攝方式進行三維測量。另一方面,當將 滑桿351移到左端時,作為判定條件的銲膏之體積值成為最小值。亦即,成為印刷基板2上全部的銲膏未滿足判定條件,成為針對全部的檢查區域利用2次拍攝方式進行三維測量。 In FIG. 12, for example, when the slide bar 351 is moved to the right end, the volume value of the solder paste as a determination condition becomes the maximum value. In other words, all of the solder paste on the printed circuit board 2 satisfies the determination condition, and three-dimensional measurement is performed by four imaging methods for all the inspection regions. On the other hand, when When the slider 351 is moved to the left end, the volume value of the solder paste as a determination condition becomes the minimum value. In other words, all of the solder paste on the printed circuit board 2 does not satisfy the determination condition, and three-dimensional measurement is performed by using two imaging methods for all the inspection regions.
又,在條件設定畫面350設有預定時間顯示部352(預定時間顯示手段),其可顯示在操作滑桿351所設定之判定條件(既定的體積值)之下花費在印刷基板2的測量之預定時間。此處顯示之預定時間係依據操作滑桿351所設定之判定條件與封面資料所算出。 Further, the condition setting screen 350 is provided with a predetermined time display unit 352 (predetermined time display means) which can display the measurement of the printed substrate 2 under the determination condition (scheduled volume value) set by the operation slider 351. scheduled time. The predetermined time displayed here is calculated based on the determination conditions set by the operation slider 351 and the cover data.
例如在圖8所示的例子中,截至1個檢查區域之全部的拍攝處理終了為止所需的時間為,於4次拍攝方式的情況係100msec(0.100sec),於2次拍攝方式的情況係40msec(0.040sec)。 For example, in the example shown in FIG. 8, the time required for the completion of all the imaging processes up to one inspection area is 100 msec (0.100 sec) in the case of the four imaging modes, and the case of the two imaging modes is 40msec (0.040sec).
因此,當將設定於印刷基板2上之檢查區域數設為N個時,截至取得1片印刷基板2全範圍的影像資料為止所需的時間為,針對全部的檢查區域利用4次拍攝方式取得影像資料之情況,成為100×N(msec)。另一方面,於針對全部的檢查區域利用2次拍攝方式取得影像資料之情況,成為40×N(msec)。 Therefore, when the number of inspection areas set on the printed circuit board 2 is N, the time required to obtain the entire range of video data of one printed circuit board 2 is obtained by using four imaging methods for all the inspection areas. In the case of image data, it becomes 100 × N (msec). On the other hand, when image data is acquired by using two imaging methods for all the inspection areas, it is 40 × N (msec).
又,在操作滑桿351所設定之含有小於既定值的體積的銲膏之檢查區域的數為N1(個)且未含有前述小於既定值的體積的銲膏之檢查區域的數為N2(個)的情況,截至取得1片印刷基板2的全範圍的影像資料所需的時間成為100×N1(msec)+40×N2(msec)。 Further, the number of inspection regions of the solder paste having the volume of the solder paste having a volume smaller than a predetermined value set by the operation slider 351 is N1 (number), and the number of inspection regions of the solder paste not containing the volume smaller than the predetermined value is N2 ( In the case of obtaining image data of the entire range of one printed substrate 2, the time required to obtain the entire range of image data of one printed substrate 2 is 100 × N1 (msec) + 40 × N2 (msec).
再者,亦可建構成:將馬達15、16驅動並將 含有將印刷基板2從既定的檢查區域朝下一檢查區域移動的移動時間在內的時間作為預定時間顯示於預定時間顯示部352。 Furthermore, it can also be constructed by driving the motors 15, 16 and The time including the moving time for moving the printed substrate 2 from the predetermined inspection region toward the next inspection region is displayed on the predetermined time display portion 352 as a predetermined time.
(g)上述實施形態中建構成:於2次拍攝方式中,依據在相位差180°的2種的光圖案之下分別所拍攝之2種的影像資料進行三維測量。亦可取而代之,作成例如依據在相位差90°的2種的光圖案之下分別所拍攝之2種的影像資料進行三維測量的構成。此種情況,藉由使用上述式(23),(27),利用2種的影像資料上之各畫素的輝度值V20、V21與已知的比例常數K,可算出各畫素中之光圖案的相位θ2。 (g) In the above-described embodiment, the two-dimensional imaging method performs three-dimensional measurement based on two types of image data captured under two types of light patterns having a phase difference of 180 degrees. Alternatively, for example, three-dimensional measurement may be performed based on two kinds of image data respectively captured under two kinds of light patterns having a phase difference of 90°. In this case, by using the above equations (23) and (27), the luminance values V 20 and V 21 of the respective pixels on the two kinds of video data and the known proportional constant K can be used to calculate each pixel. The phase θ 2 of the light pattern.
依據此構成,因為依據使用了「tan-1」的演算式可求出相位θ2,所以可在-180°~180°的360°範圍進行高度測量,能更加大測量範圍。 According to this configuration, since the phase θ 2 can be obtained based on the calculation formula using "tan -1 ", the height measurement can be performed in the 360° range of -180° to 180°, and the measurement range can be made larger.
當然,除此之外,若為滿足上述式(1)、(2)、(3)的關係者,則亦可採用其他構成。在獲得相位θ2的一般式方面,上述式(9)被舉出作為一例〔參照[數9]〕。 Of course, in addition to this, if the relationship of the above formulas (1), (2), and (3) is satisfied, other configurations may be employed. In the general formula for obtaining the phase θ 2 , the above formula (9) is exemplified [refer to [9]].
1‧‧‧基板檢查裝置 1‧‧‧Substrate inspection device
2‧‧‧印刷基板 2‧‧‧Printing substrate
3‧‧‧載置台 3‧‧‧ mounting table
4‧‧‧照明裝置 4‧‧‧Lighting device
4a‧‧‧光源 4a‧‧‧Light source
4b‧‧‧液晶格柵 4b‧‧‧LCD grille
5‧‧‧相機 5‧‧‧ camera
6‧‧‧控制裝置 6‧‧‧Control device
15‧‧‧馬達 15‧‧‧Motor
16‧‧‧馬達 16‧‧‧Motor
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Also Published As
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WO2017061131A1 (en) | 2017-04-13 |
JP6027204B1 (en) | 2016-11-16 |
JP2017072385A (en) | 2017-04-13 |
CN107532889B (en) | 2020-01-24 |
CN107532889A (en) | 2018-01-02 |
TW201713919A (en) | 2017-04-16 |
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