TWI603801B - Method of cutting glass substrate and method of manufacturing glass substrate - Google Patents
Method of cutting glass substrate and method of manufacturing glass substrate Download PDFInfo
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- TWI603801B TWI603801B TW102120419A TW102120419A TWI603801B TW I603801 B TWI603801 B TW I603801B TW 102120419 A TW102120419 A TW 102120419A TW 102120419 A TW102120419 A TW 102120419A TW I603801 B TWI603801 B TW I603801B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Laser Beam Processing (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Thermal Sciences (AREA)
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Description
本發明係關於一種玻璃基板之切斷方法及玻璃基板之製造方法。 The present invention relates to a method of cutting a glass substrate and a method of manufacturing a glass substrate.
作為玻璃基板之切斷方法，一直研究使用雷射光之切斷方法。 As a method of cutting a glass substrate, a method of cutting using laser light has been studied.
例如於專利文獻1中，揭示有如下玻璃基板之切斷方法：於藉由照射雷射光而形成特定深度之切口凹部後，立即利用壓縮氣體等進行強制冷卻。 For example, Patent Document 1 discloses a method of cutting a glass substrate by performing a forced cooling using a compressed gas or the like immediately after forming a slit recess having a specific depth by irradiating laser light.
又，於專利文獻2中，揭示有如下玻璃基板之切斷方法：對玻璃基板掃描並照射雷射光，對於雷射光之照射部分使玻璃熔融，並利用輔助氣體將熔融之玻璃吹飛。 Further, Patent Document 2 discloses a method of cutting a glass substrate by scanning and irradiating a laser beam with a laser beam, melting the glass with respect to the portion irradiated with the laser light, and blowing the molten glass with an assist gas.
然而，根據專利文獻1中所揭示之玻璃基板之切斷方法，其切斷面中包含與藉由照射雷射光而形成之切口凹部相對應之部分、及於其後進行強制冷卻時形成於切口凹部之下部之部分，兩者之表面特性不同。 However, according to the cutting method of the glass substrate disclosed in Patent Document 1, the cut surface includes a portion corresponding to the notch recess formed by irradiating the laser light, and is formed in the slit when forced cooling is performed thereafter. The part of the lower part of the recess has different surface characteristics.
於如此在切斷面中存在由切斷方法引起之表面特性不同之部分之情形時，為了製成製品，而必需研磨切斷面，使其成為表面特性均一之切斷面。因此，對於切斷面之研磨步驟需要花費時間。 In the case where the surface characteristics differed by the cutting method in the cut surface as described above, in order to form a product, it is necessary to polish the cut surface to form a cut surface having uniform surface characteristics. Therefore, it takes time for the grinding step of the cut surface.
又，由於必需於照射雷射光後立即對玻璃基板吹送壓縮氣體(輔助氣體)，故而存在玻璃基板之位置容易移位而切斷精度降低之情形。 Further, since it is necessary to blow the compressed gas (assist gas) to the glass substrate immediately after the irradiation of the laser light, the position of the glass substrate is likely to be displaced and the cutting accuracy is lowered.
根據專利文獻2中所揭示之玻璃基板之切斷方法，存在如下問題：有時會因輔助氣體之壓力而導致玻璃基板之位置移位，從而使切斷時之精度降低。又，存在因雷射光之能量密度導致局部之玻璃之熱變形量變大而於玻璃基板產生龜裂之情形。進而，由於藉由輔助氣體而去除之熔融玻璃會附著並凝固於切斷面及其周邊，故而為了去除該熔融玻璃而於研磨步驟中需要花費時間。 According to the method for cutting a glass substrate disclosed in Patent Document 2, there is a problem in that the position of the glass substrate is displaced by the pressure of the assist gas, and the accuracy at the time of cutting is lowered. Further, there is a case where the amount of thermal deformation of the local glass is increased due to the energy density of the laser light, and cracking occurs in the glass substrate. Further, since the molten glass removed by the assist gas adheres and solidifies to the cut surface and its periphery, it takes time to remove the molten glass in the polishing step.
專利文獻1：日本專利特開2004-059328號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2004-059328
專利文獻2：日本專利特開昭60-251138號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. SHO 60-251138
本發明之目的在於鑒於上述先前技術之問題而提供一種與對上述玻璃基板吹送輔助氣體之先前之玻璃基板之切斷方法相比，可精度良好地對玻璃基板進行切斷加工的玻璃基板之切斷方法。 An object of the present invention is to provide a glass substrate capable of accurately cutting a glass substrate as compared with a method of cutting a glass substrate to which the auxiliary gas is blown to the glass substrate in view of the above-described problems of the prior art. Break method.
為了解決上述問題，本發明提供一種玻璃基板之切斷方法，其特徵在於：其係照射雷射光而切斷玻璃基板者，且於對上述玻璃基板之一表面照射上述雷射光而成之雷射光之照射區域內，加熱至自上述玻璃基板之一表面至另一表面之雷射光照射部氣化之溫度以上，並使上述雷射光之照射區域沿著上述玻璃基板之切斷預定線相對於上述玻璃基板相對地移動。 In order to solve the above problems, the present invention provides a method for cutting a glass substrate, which is characterized in that it is irradiated with laser light to cut a glass substrate, and the laser light is irradiated onto one surface of the glass substrate. In the irradiation region, heating is performed at a temperature higher than a temperature at which the laser beam irradiated from one surface of the glass substrate to the other surface is vaporized, and the irradiation region of the laser light is along the line to cut of the glass substrate. The glass substrate moves relatively.
根據本發明之玻璃基板之切斷方法，與先前之使用輔助氣體之玻璃基板之切斷方法相比，可精度良好地對玻璃基板進行切斷加工。 According to the method for cutting a glass substrate of the present invention, the glass substrate can be cut accurately with respect to the method of cutting a glass substrate using the auxiliary gas.
11‧‧‧玻璃基板 11‧‧‧ glass substrate
12‧‧‧雷射光 12‧‧‧Laser light
13‧‧‧切斷預定線 13‧‧‧ cut the booking line
14‧‧‧已照射雷射光之區域 14‧‧‧A zone that has been exposed to laser light
15‧‧‧雷射光照射後之雷射光照射部 15‧‧‧Laser light irradiation after laser irradiation
21‧‧‧雷射光照射部 21‧‧‧Laser Light Irradiation Department
22‧‧‧雷射光照射部之周邊部 22‧‧‧The peripheral part of the laser irradiation unit
23‧‧‧去除已氣化之玻璃成分之構件 23‧‧‧Removal of components of vaporized glass components
31‧‧‧析出物 31‧‧‧Precipitation
A‧‧‧箭頭 A‧‧‧ arrow
圖1係本發明之實施形態之玻璃基板之切斷方法的說明圖。 Fig. 1 is an explanatory view showing a method of cutting a glass substrate according to an embodiment of the present invention.
圖2係本發明之實施形態之玻璃基板之切斷方法中之加熱步驟的說明圖。 Fig. 2 is an explanatory view showing a heating step in a method of cutting a glass substrate according to an embodiment of the present invention.
圖3係本發明之實施形態之玻璃基板之切斷方法中之冷卻步驟的說明圖。 Fig. 3 is an explanatory view showing a cooling step in a method of cutting a glass substrate according to an embodiment of the present invention.
圖4係本發明之實驗例1之玻璃基板之搬送速度及雷射光之能量密度與切斷面之評價之關係的說明圖。 Fig. 4 is an explanatory view showing the relationship between the transport speed of the glass substrate of Experimental Example 1 and the energy density of the laser light and the evaluation of the cut surface.
圖5係本發明之實驗例2之玻璃基板之搬送速度及雷射光之能量密度與切斷面之評價之關係的說明圖。 Fig. 5 is an explanatory view showing the relationship between the transport speed of the glass substrate of Experimental Example 2 of the present invention and the energy density of the laser light and the evaluation of the cut surface.
圖6係本發明之實驗例3之玻璃基板之搬送速度及雷射光之能量密度與切斷面之評價之關係的說明圖。 Fig. 6 is an explanatory view showing the relationship between the transport speed of the glass substrate of Experimental Example 3 of the present invention and the energy density of the laser light and the evaluation of the cut surface.
圖7係本發明之實驗例4之玻璃基板之搬送速度及雷射光之能量密度與切斷面之評價之關係的說明圖。 Fig. 7 is an explanatory view showing the relationship between the transport speed of the glass substrate of Experimental Example 4 of the present invention and the energy density of the laser light and the evaluation of the cut surface.
以下，參照圖式對用以實施本發明之形態進行說明，但本發明並不限制於下述實施形態，可在不脫離本發明之範圍之情況下對下述實施形態施加各種變形及置換。 In the following, the embodiments of the present invention are described with reference to the drawings, but the present invention is not limited to the embodiments described below, and various modifications and substitutions may be made to the embodiments described below without departing from the scope of the invention.
於本實施形態中，對本發明之玻璃基板之切斷方法進行說明。 In the present embodiment, a method of cutting a glass substrate of the present invention will be described.
本發明之玻璃基板之切斷方法係照射雷射光而切斷玻璃基板者，且具有以下構成。 The method for cutting a glass substrate of the present invention is a method of irradiating laser light to cut a glass substrate, and has the following configuration.
於對玻璃基板之一表面照射雷射光而成之雷射光之照射區域內，加熱至自上述玻璃基板之一表面至另一表面之雷射光照射部氣化之溫度以上。 In a region where the laser beam is irradiated with laser light on one surface of the glass substrate, it is heated to a temperature higher than a temperature at which the laser beam irradiated from one surface of the glass substrate to the other surface is vaporized.
而且，本發明之玻璃基板之切斷方法之特徵在於：使上述雷射光之照射區域沿著上述玻璃基板之切斷預定線相對於上述玻璃基板相對地移動。 Further, the method for cutting a glass substrate according to the present invention is characterized in that the irradiation region of the laser light is relatively moved with respect to the glass substrate along a line to cut of the glass substrate.
使用圖1~圖3進行具體說明。 The details will be described using FIG. 1 to FIG. 3 .
圖1模式性地表示自照射雷射光之側(一表面側)之玻璃基板上表面觀察利用本發明之玻璃基板之切斷方法正切斷玻璃基板時之構成。 FIG. 1 schematically shows a configuration in which the glass substrate is cut by the cutting method of the glass substrate of the present invention from the upper surface of the glass substrate on the side (one surface side) of the irradiated laser light.
玻璃基板11係沿圖1中箭頭A所示之方向被搬送，從而使自未圖示之雷射振盪裝置發射之雷射光12所照射之部分(雷射光之照射區域)可沿著玻璃基板上之切斷預定線13移動。 The glass substrate 11 is conveyed in the direction indicated by the arrow A in Fig. 1, so that the portion (the irradiation region of the laser light) irradiated by the laser light 12 emitted from the laser oscillation device (not shown) can be along the glass substrate. The cut line 13 is moved.
圖1中，於雷射光12所照射之部分(雷射光之照射區域)中，對玻璃基板之自一表面至另一表面之雷射光照射部進行加熱(加熱步驟)。 繼而，已照射雷射光之區域14藉由搬送玻璃基板11而遠離雷射光之照射區域，從而使雷射光照射後之雷射光照射部(照射雷射光而使玻璃氣化之部分)15之周邊部得以冷卻(冷卻步驟)。 In Fig. 1, in the portion (the irradiation region of the laser light) irradiated by the laser light 12, the laser light irradiation portion from one surface to the other surface of the glass substrate is heated (heating step). Then, the region 14 to which the laser light has been irradiated is moved away from the irradiation region of the laser light by the glass substrate 11, and the peripheral portion of the laser light irradiation portion (the portion that irradiates the laser light to vaporize the glass) after the laser light is irradiated is irradiated. It is cooled (cooling step).
再者，圖1中係採用如下構成，即，藉由搬送玻璃基板11，而使玻璃基板11上之雷射光12所照射之部分(雷射光之照射區域)移位，但只要可沿著切斷預定線照射雷射光12即可，並不限定於該形態。例如，亦可藉由將玻璃基板11固定，並對雷射振盪裝置與玻璃基板之間之雷射光之光路上之光學系統進行調整、操作，而使雷射光12所照射之部分(雷射光之照射區域)之位置移位。亦可以搬送玻璃基板11，且亦使雷射光12所照射之部分之位置移位之方式構成。 In addition, in FIG. 1, the glass substrate 11 is conveyed, and the part irradiated with the laser beam 11 on the glass substrate 11 (the irradiation area of the laser light) is shifted, but as long as it can be cut along It is only necessary to illuminate the laser beam 12 by the predetermined line, and is not limited to this form. For example, by irradiating the glass substrate 11 and adjusting and operating the optical system on the optical path of the laser light between the laser oscillating device and the glass substrate, the portion irradiated by the laser light 12 (laser light) The position of the illumination area is shifted. It is also possible to transport the glass substrate 11 and also to shift the position of the portion irradiated by the laser light 12.
再者，為了方便說明，而將玻璃基板之切斷預定線13表示於圖中，但於玻璃基板上並未設置該線。又，切斷預定線並不限定於直線，可根據所要求之切斷後之玻璃基板之形狀而設為曲線等任意線。 Further, for convenience of explanation, the line to cut 13 for the glass substrate is shown in the drawing, but the line is not provided on the glass substrate. Further, the line to be cut is not limited to a straight line, and may be an arbitrary line such as a curve depending on the shape of the glass substrate to be cut after the required cutting.
可應用本發明之玻璃基板之切斷方法的玻璃基板之組成並無特別限定，可應用於各種玻璃基板。例如，可列舉無鹼硼矽酸玻璃、硼矽酸玻璃、鈉鈣玻璃、高矽玻璃、及其他以氧化矽為主要成分之氧化物系玻璃等。 The composition of the glass substrate to which the glass substrate cutting method of the present invention can be applied is not particularly limited, and can be applied to various glass substrates. Examples thereof include alkali-free borosilicate glass, borosilicate glass, soda lime glass, sorghum glass, and other oxide-based glass containing cerium oxide as a main component.
又，關於玻璃基板之厚度亦無特別限定。 Further, the thickness of the glass substrate is also not particularly limited.
然而，於對上述玻璃基板照射雷射光並進行加熱時，於雷射光之照射區域內，對自玻璃基板之一表面側至另一表面之雷射光照射部、即遍及其板厚方向整體，加熱至玻璃氣化之溫度以上。因此，較佳為根據雷射振盪裝置之輸出等選擇玻璃基板之板厚。例如，玻璃基板之板厚較佳為3.0mm以下，更佳為1.0mm以下，進而較佳為0.5mm以下，特佳為0.2mm以下。關於玻璃基板之下限值，只要為大於零(0)之值，則並無特別限定。 However, when the glass substrate is irradiated with laser light and heated, the laser light irradiation portion from one surface side to the other surface of the glass substrate, that is, the entire thickness direction of the glass substrate is heated in the irradiation region of the laser light. Above the temperature at which the glass is vaporized. Therefore, it is preferable to select the thickness of the glass substrate in accordance with the output of the laser oscillation device or the like. For example, the thickness of the glass substrate is preferably 3.0 mm or less, more preferably 1.0 mm or less, still more preferably 0.5 mm or less, and particularly preferably 0.2 mm or less. The lower limit of the glass substrate is not particularly limited as long as it is greater than zero (0).
又，圖1所示之玻璃基板之形狀為矩形，但玻璃基板之形狀亦無特別限定。例如，亦可為藉由浮式法或下拉法等之玻璃基板成形裝置而成形之帶狀之玻璃基板。 Further, the shape of the glass substrate shown in FIG. 1 is a rectangle, but the shape of the glass substrate is not particularly limited. For example, it may be a strip-shaped glass substrate formed by a glass substrate forming apparatus such as a float method or a down-draw method.
其次，對在雷射光之照射區域(對玻璃基板照射雷射光之部分)內進行之加熱步驟進行說明。圖2係模式性地表示包含圖1中之雷射光之照射區域的B-B'線處之剖面圖者。 Next, a heating step performed in the irradiation region of the laser light (the portion irradiated with the laser light to the glass substrate) will be described. Fig. 2 is a schematic view showing a cross-sectional view taken at line BB' of the irradiation region of the laser light of Fig. 1.
於本發明之玻璃基板之切斷方法中，藉由以上述方式對玻璃基板照射雷射光12，而於雷射光之照射區域內進行加熱步驟。 In the method of cutting a glass substrate of the present invention, the glass substrate is irradiated with the laser light 12 in the above manner, and the heating step is performed in the irradiation region of the laser light.
對於玻璃基板之雷射光之照射區域，將自玻璃基板之一表面至玻璃基板之另一表面之雷射光照射部21加熱至玻璃氣化之溫度以上。 此處，所謂玻璃基板之一表面係指雷射光入射側之面，所謂另一表面係指其對向面。因此，對於雷射光照射部21，使玻璃氣化而於短時間內沿著雷射光之照射方向(玻璃基板之厚度方向)形成貫通孔。 The laser light irradiation portion 21 from one surface of the glass substrate to the other surface of the glass substrate is heated to a temperature higher than the vaporization temperature of the glass in the irradiation region of the laser light of the glass substrate. Here, the surface of one of the glass substrates refers to the surface on the incident side of the laser light, and the other surface refers to the opposite surface. Therefore, in the laser beam irradiation unit 21, the glass is vaporized, and a through hole is formed in the irradiation direction of the laser light (the thickness direction of the glass substrate) in a short time.
而且，對於雷射光照射部21之周邊部22，亦藉由來自雷射光照射部之傳熱而被加熱。 Further, the peripheral portion 22 of the laser beam irradiation unit 21 is also heated by heat transfer from the laser beam irradiation unit.
如此，於加熱步驟及其剛結束後、即於雷射光照射時(玻璃氣化時)及剛照射雷射光後，不對上述雷射光照射部吹送輔助氣體(不使用輔助氣體)即可於短時間內於雷射光照射部使玻璃氣化。因此，可不產生玻璃基板之位置偏移等而精度良好地進行加工，且可抑制玻璃基 板中龜裂之產生。 In this manner, after the heating step and immediately after the irradiation, that is, when the laser beam is irradiated (when the glass is vaporized) and immediately after the laser beam is irradiated, the auxiliary gas (the auxiliary gas is not used) can be blown to the laser light irradiation unit in a short time. The glass is vaporized by the laser light irradiation portion. Therefore, it is possible to perform processing with high precision without causing a positional shift of the glass substrate or the like, and it is possible to suppress the glass base. The crack in the board is produced.
作為加熱步驟中之雷射光之照射條件並無限定，只要以於玻璃基板之雷射光照射區域內，可將自玻璃基板之一表面(雷射光入射側之面)側至另一表面側之雷射光照射部加熱至玻璃之氣化溫度以上之方式選擇即可。 The irradiation conditions of the laser light in the heating step are not limited, and may be applied to the surface of one of the glass substrates (the surface on the incident side of the laser light) to the other surface side in the laser light irradiation region of the glass substrate. The light irradiation unit may be heated to a temperature higher than or equal to the vaporization temperature of the glass.
具體而言，只要根據例如作為被切斷物之玻璃基板之厚度、玻璃組成、玻璃基板之搬送速度(雷射光之照射區域相對於玻璃基板之相對移動速度)等，以可對雷射光照射部如上述般進行加熱之方式選擇雷射光之能量密度等即可。例如可藉由預先進行預試驗而算出。 Specifically, the laser beam irradiation unit can be used depending on, for example, the thickness of the glass substrate as the object to be cut, the glass composition, the transport speed of the glass substrate (the relative movement speed of the irradiation region of the laser light with respect to the glass substrate), and the like. The energy density of the laser light or the like may be selected by heating as described above. For example, it can be calculated by performing a preliminary test in advance.
尤其是於將雷射光之照射區域相對於玻璃基板之相對移動速度設為v(m/小時)、將上述雷射光之能量密度設為E(W/mm2)、將玻璃基板之板厚設為t(mm)之情形時，較佳為以滿足E≧50×t×v之關係之方式調整照射之雷射光之能量密度。 In particular, the relative movement speed of the irradiation region of the laser light with respect to the glass substrate is set to v (m/hour), the energy density of the laser light is set to E (W/mm 2 ), and the thickness of the glass substrate is set. In the case of t (mm), it is preferable to adjust the energy density of the irradiated laser light so as to satisfy the relationship of E ≧ 50 × t × v.
藉由在滿足該規定之狀態下進行包含加熱步驟之玻璃基板之切斷，而可於雷射光之照射區域內，確實地將自玻璃基板之一表面至玻璃基板之另一表面之雷射光照射部加熱至玻璃氣化之溫度以上。 By performing the cutting of the glass substrate including the heating step while satisfying the predetermined condition, it is possible to surely irradiate the laser light from one surface of the glass substrate to the other surface of the glass substrate in the irradiation region of the laser light. The part is heated to a temperature above the vaporization of the glass.
關於照射至玻璃基板之雷射光之點徑(玻璃基板之一表面上之雷射光之光束直徑)亦無限定，可根據所要求之加工精度等進行選擇。 The spot diameter of the laser light irradiated onto the glass substrate (the beam diameter of the laser light on one surface of the glass substrate) is not limited, and can be selected according to the required processing precision or the like.
再者，關於使用之雷射之種類並無特別限定，只要為藉由對玻璃基板照射所發射之雷射光，而可對於該照射之部分將玻璃基板加熱者即可。具體而言，例如可使用CO2雷射、準分子雷射、銅蒸鍍雷射、YAG(Yttrium Aluminum Garnet，釔鋁石榴石)雷射等。 Further, the type of the laser to be used is not particularly limited, and the glass substrate may be heated by irradiating the glass substrate with the emitted laser light. Specifically, for example, a CO 2 laser, a pseudo-molecular laser, a copper vapor deposition laser, a YAG (Yttrium Aluminum Garnet) laser, or the like can be used.
於加熱步驟中，藉由以上述方式對玻璃基板照射雷射光，而對於雷射光照射部使玻璃氣化。因此，於雷射光照射部及其周邊會產生已氣化之玻璃成分(氣體)。若該成分於配置於雷射光之光路上之雷射 振盪裝置之透鏡或反射鏡等光學系統之表面析出、附著，則存在無法對玻璃基板照射充分之能量之雷射光之情形、或無法對所需之位置照射雷射光之情形等，且有對玻璃基板之加工精度等造成影響之虞。因此，藉由對玻璃基板照射雷射光，較佳為將已氣化之玻璃成分去除。 即，於加熱步驟中，較佳為將已氣化之上述雷射光照射部之玻璃成分去除。關於去除已氣化之玻璃成分之構件並無特別限定，可使用抽吸已氣化之玻璃成分之機構、或利用氣體將已氣化之玻璃成分吹飛之機構等。關於其配置亦只要根據使用之構件進行選擇即可，只要以不阻礙加熱步驟，且可於已氣化之玻璃成分附著於配置在雷射光之光路上之透鏡、反射鏡等之前將其去除之方式配置即可。例如，於圖2中，如以23表示般，可考慮配置於雷射光所照射之部分之附近。 In the heating step, the glass substrate is irradiated with the laser light in the above manner, and the glass is vaporized for the laser light irradiation portion. Therefore, a vaporized glass component (gas) is generated in the laser light irradiation portion and its periphery. If the component is on a laser disposed on the light path of the laser beam When the surface of an optical system such as a lens or a mirror of an oscillating device is deposited or adhered, there is a case where laser light cannot be irradiated with sufficient energy to the glass substrate, or a laser beam cannot be irradiated to a desired position, and the glass is provided. The processing accuracy of the substrate and the like are affected. Therefore, it is preferable to remove the vaporized glass component by irradiating the glass substrate with laser light. That is, in the heating step, it is preferable to remove the glass component of the vaporized irradiation portion of the above-described laser light. The member for removing the vaporized glass component is not particularly limited, and a mechanism for sucking the vaporized glass component or a mechanism for blowing the vaporized glass component with a gas may be used. The arrangement may be selected according to the member to be used, as long as the heating step is not hindered, and the vaporized glass component can be removed before being attached to a lens, a mirror, or the like disposed on the optical path of the laser light. The configuration can be. For example, in FIG. 2, as indicated by 23, it is conceivable to arrange in the vicinity of the portion irradiated by the laser light.
再者，於使用利用氣體將已氣化之玻璃成分吹飛之機構之情形時，使用之氣體之種類並無特別限定，但由於係使用於玻璃基板之經雷射光加熱之部分之周邊，故而較佳為使用不燃性氣體。具體而言，可使用例如氮氣、氬氣等惰性氣體、或空氣等。又，於此情形時，為了防止玻璃基板之位置移位，較佳為以氣體不會碰撞到玻璃基板之方式供給。 Further, in the case of using a mechanism for blowing a vaporized glass component by a gas, the type of the gas to be used is not particularly limited, but since it is used in the periphery of a portion of the glass substrate heated by the laser light, It is preferred to use a non-combustible gas. Specifically, an inert gas such as nitrogen or argon, or air or the like can be used. Further, in this case, in order to prevent displacement of the position of the glass substrate, it is preferable to supply the gas so as not to collide with the glass substrate.
其次，對冷卻步驟進行說明。 Next, the cooling step will be described.
冷卻步驟係如下者：於照射雷射光後，藉由使玻璃基板及/或雷射光之照射區域移動，而使雷射光照射後之雷射光照射部(已照射雷射光之部分)遠離雷射光之照射區域，從而將雷射光照射部之周邊部冷卻。 The cooling step is such that after irradiating the laser light, the laser light irradiating portion (the portion irradiated with the laser light) after the laser light is irradiated is moved away from the laser light by moving the irradiation region of the glass substrate and/or the laser light. The region is irradiated to cool the peripheral portion of the laser beam irradiation portion.
於冷卻步驟中，如圖2所示，將雷射光照射部(於加熱步驟中經照射雷射光而氣化之部分)21之周邊部22冷卻。於冷卻時，如圖3所示，存在該周邊部22之至少一部分作為大致線狀之析出物31而析出至玻璃基板表面(玻璃基板之一表面及/或另一表面)之情形。推斷其係由於玻 璃之熱導率較低，故而於加熱步驟後，於冷卻步驟中在該周邊部22內產生溫度梯度，因此藉由在該周邊部22內產生之應力而於玻璃基板上將周邊部22之至少一部分排除並析出。再者，於圖中析出物31係析出於玻璃基板之上表面(一表面)，但亦存在析出於下表面(另一表面)側之情形。如此，由於將雷射光照射部之周邊部22之至少一部分自照射雷射光而成之切斷面排除，故而最終可獲得均一之切斷面。 In the cooling step, as shown in FIG. 2, the peripheral portion 22 of the laser light irradiation portion (the portion which is vaporized by irradiating the laser light in the heating step) 21 is cooled. At the time of cooling, as shown in FIG. 3, at least a part of the peripheral portion 22 is deposited as a substantially linear precipitate 31 on the surface of the glass substrate (one surface and/or the other surface of the glass substrate). Inferred that it is due to glass Since the thermal conductivity of the glass is low, a temperature gradient is generated in the peripheral portion 22 in the cooling step after the heating step, so that the peripheral portion 22 is placed on the glass substrate by the stress generated in the peripheral portion 22. At least part of it is excluded and precipitated. Further, in the figure, the precipitate 31 is deposited on the upper surface (one surface) of the glass substrate, but there is also a case where it is deposited on the lower surface (the other surface) side. In this manner, since at least a part of the peripheral portion 22 of the laser light irradiation portion is excluded from the cut surface obtained by irradiating the laser light, a uniform cut surface can be finally obtained.
於冷卻步驟中，為了使上述析出物產生而獲得均一之切斷面，較佳為將雷射光照射部之周邊部以適當之冷卻速度進行冷卻。該冷卻速度可根據雷射光之照射區域相對於玻璃基板之相對移動速度而改變。因此，較佳為以進行預試驗等並於冷卻步驟中產生上述析出物之方式，選擇雷射光之照射區域相對於玻璃基板之相對移動速度。 In the cooling step, in order to obtain a uniform cut surface in order to generate the precipitate, it is preferable to cool the peripheral portion of the laser light irradiation portion at an appropriate cooling rate. The cooling rate may vary depending on the relative moving speed of the irradiated area of the laser light with respect to the glass substrate. Therefore, it is preferable to select the relative moving speed of the irradiation region of the laser light with respect to the glass substrate so as to perform the preliminary test or the like and generate the precipitate in the cooling step.
由於亦存在冷卻步驟中產生之析出物31阻礙冷卻之情形，故而較佳為將產生於雷射光照射部之周邊部之析出物去除。作為去除該析出物之手段並無特別限定，例如，可藉由利用氣體吹飛、抽吸去除、利用毛刷或隔板等去除等方法而簡單地去除。 Since the precipitate 31 generated in the cooling step is also inhibited from cooling, it is preferable to remove the precipitate generated in the peripheral portion of the laser beam irradiation portion. The means for removing the precipitate is not particularly limited, and can be easily removed by, for example, gas blowing, suction removal, removal by a brush or a separator, or the like.
再者，於利用氣體將析出物吹飛之情形時，為了不使玻璃基板產生振動等而對玻璃基板之切斷精度造成影響，較佳為使用低壓之氣體。 In the case where the precipitate is blown off by the gas, it is preferable to use a gas having a low pressure in order to prevent the glass substrate from vibrating or the like, thereby affecting the cutting accuracy of the glass substrate.
冷卻步驟係如上所述般將雷射光照射後之雷射光照射部之周邊部22冷卻者，對於其冷卻溫度並無限定。例如，雷射光照射部之周邊部較佳為於雷射光照射部之加熱後冷卻至玻璃轉移溫度以下。 The cooling step is performed by cooling the peripheral portion 22 of the laser beam irradiation portion after the laser light is irradiated as described above, and the cooling temperature is not limited. For example, it is preferable that the peripheral portion of the laser beam irradiation portion is cooled to a temperature below the glass transition temperature after heating of the laser beam irradiation portion.
此時，於在加熱步驟後藉由周邊氛圍之溫度而冷卻之情形時，周邊溫度較佳為至少在玻璃轉移溫度以下，較佳為100℃以下，特佳為40℃以下。再者，此處所謂之周邊溫度係指至少進行冷卻步驟之部分之周邊之溫度，較佳為包含進行切斷之玻璃基板整體之周邊之溫度。 In this case, when cooling is performed by the temperature of the surrounding atmosphere after the heating step, the peripheral temperature is preferably at least the glass transition temperature, preferably 100 ° C or lower, and particularly preferably 40 ° C or lower. Here, the term "peripheral temperature" as used herein means a temperature around the portion where at least the cooling step is performed, and preferably includes a temperature around the entire glass substrate to be cut.
以上對本發明之玻璃基板之切斷方法進行了說明，於該玻璃基板之切斷方法中，由於未對玻璃基板吹送輔助氣體，故而可抑制玻璃基板之位置之移位，從而可精度良好地對玻璃基板進行切斷加工。 又，於切斷時可抑制玻璃基板中龜裂之產生，從而可製成表面特性均一之切斷面。 The method for cutting the glass substrate of the present invention has been described above. In the method for cutting the glass substrate, since the auxiliary gas is not blown to the glass substrate, the displacement of the position of the glass substrate can be suppressed, and the glass substrate can be accurately adjusted. The glass substrate is cut. Moreover, the occurrence of cracks in the glass substrate can be suppressed at the time of cutting, and a cut surface having uniform surface characteristics can be obtained.
將上文所說明之玻璃基板之切斷方法應用於玻璃基板之製造步驟中，而可成為使用該玻璃基板之切斷方法之玻璃基板之製造方法。 The method of cutting a glass substrate described above is applied to a manufacturing step of a glass substrate, and can be a method of producing a glass substrate using the method for cutting the glass substrate.
於該玻璃基板之製造方法中，由於可精度良好地對玻璃基板進行切斷加工，且可抑制於切斷時玻璃基板中龜裂之產生，從而可製成均一之切斷面，故而可獲得如下效果：提高玻璃基板之製造良率，及縮短研磨步驟中之切斷面之研磨時間或省略研磨步驟。 In the method for producing a glass substrate, since the glass substrate can be cut accurately, and cracking in the glass substrate during cutting can be suppressed, a uniform cut surface can be obtained, and thus it is possible to obtain a uniform cut surface. The effect of improving the manufacturing yield of the glass substrate, shortening the polishing time of the cut surface in the polishing step, or omitting the polishing step.
以下列舉具體之實施例進行說明，但本發明並不限定於該等實施例。 The specific examples are described below, but the present invention is not limited to the examples.
於本實驗例中，改變雷射光之能量密度、雷射光之照射區域相對於玻璃基板之相對移動速度而切斷玻璃基板，並對切斷後之玻璃基板之切斷面進行評價。 In the present experimental example, the energy density of the laser light and the relative moving speed of the irradiation region of the laser light with respect to the glass substrate were changed to cut the glass substrate, and the cut surface of the cut glass substrate was evaluated.
於切斷玻璃基板時，藉由圖1所示之構成，對於長100mm、寬100mm、板厚0.1mm之包含無鹼硼矽酸玻璃之玻璃基板(旭硝子股份有限公司製造，商品名：AN100)，一面以特定之搬送速度搬送玻璃基板，一面沿著切斷預定線，將使用CO2雷射之雷射光以點徑約0.3mm、達到特定之能量密度之方式進行照射。進行切斷時玻璃基板之周邊溫度(環境溫度)為室溫(25℃)。 When the glass substrate is cut, a glass substrate containing an alkali-free borosilicate glass having a length of 100 mm, a width of 100 mm, and a thickness of 0.1 mm (manufactured by Asahi Glass Co., Ltd., trade name: AN100) is used as shown in Fig. 1 . While the glass substrate is conveyed at a specific conveyance speed, the laser beam using the CO 2 laser is irradiated with a spot diameter of about 0.3 mm along a line to cut, and the specific energy density is achieved. The ambient temperature (ambient temperature) of the glass substrate at the time of cutting was room temperature (25 ° C).
關於進行切斷後之玻璃基板，將無法切斷者評價為C，將雖可切斷但於照射有雷射之部分中未觀察到析出物、且以目視確認切斷面後 發現並不均一、或於玻璃基板產生有龜裂者評價為B。將可切斷玻璃基板、且能以目視確認為均一之切斷面者評價為A。將結果示於表1及圖4。圖4係將表1之結果之一部分圖表化而成者。 In the glass substrate after the cutting, the cut surface was evaluated as C, and the cut surface was not observed in the portion irradiated with the laser, and the cut surface was visually confirmed. It was found that B was not uniform or cracked on the glass substrate. A person who can cut the glass substrate and can visually confirm that it is a uniform cut surface is evaluated as A. The results are shown in Table 1 and Figure 4. Figure 4 is a graphical representation of one of the results of Table 1.
於圖4所示之圖表中，直線X係於將雷射光之照射區域相對於玻璃基板之相對移動速度(此處為玻璃基板之搬送速度)設為v(m/小時)、將上述雷射光之能量密度設為E(W/mm2)、將玻璃基板之板厚設為t(mm)之情形時，成為E=50×t×v之直線。 In the graph shown in FIG. 4, the straight line X is obtained by setting the relative moving speed of the irradiation region of the laser light to the glass substrate (here, the transport speed of the glass substrate) to v (m/hour), and the laser light is used. When the energy density is E (W/mm 2 ) and the thickness of the glass substrate is t (mm), a straight line of E = 50 × t × v is obtained.
而且，直線Y表示於冷卻步驟中產生有析出物之雷射光之照射區域相對於玻璃基板之相對移動速度(此處為玻璃基板之搬送速度)的最小值，該情形時為144(m/小時)。 Further, the straight line Y indicates the minimum value of the relative moving speed of the irradiation region of the laser light having the precipitate in the cooling step with respect to the glass substrate (here, the transport speed of the glass substrate), which is 144 (m/hr). ).
根據圖4，於直線X與直線Y所包圍之範圍內分佈有A評價，於能量密度小於直線X之情形時為C評價，於搬送速度慢於直線Y之情形時為B評價。 According to FIG. 4, an A evaluation is distributed in a range surrounded by the straight line X and the straight line Y, and C is evaluated when the energy density is smaller than the straight line X, and B is evaluated when the transport speed is slower than the straight line Y.
認為其原因在於：首先，關於各雷射光之照射區域相對於玻璃基板之相對移動速度(玻璃基板之搬送速度)，於照射有直線X以上之 能量密度之雷射光之情形時，可對雷射光之照射區域內之自玻璃基板之一表面至另一表面之雷射光照射部確實地加熱至玻璃氣化之溫度以上。 The reason is considered to be that, first, the relative movement speed of the irradiation region of each of the laser beams with respect to the glass substrate (the transport speed of the glass substrate) is irradiated with a straight line X or more. In the case of laser light of energy density, the laser light irradiation portion from one surface of the glass substrate to the other surface in the irradiation region of the laser light can be surely heated to a temperature higher than the vaporization temperature of the glass.
而且，認為其原因在於：進而，藉由設為直線Y以上之搬送速度，可將雷射光照射後之雷射光照射部之周邊部充分地冷卻，並以析出物之形式自切斷面部分排除，因此可製成表面特性均一之切斷面。 In addition, it is considered that the peripheral portion of the laser beam irradiation portion after the laser beam irradiation is sufficiently cooled by the conveyance speed of the line Y or more, and is excluded from the cut surface portion in the form of precipitates. Therefore, it is possible to produce a cut surface having uniform surface characteristics.
即，成為C評價之玻璃基板中，認為相對於雷射光之照射區域相對於玻璃基板之相對移動速度(玻璃基板之搬送速度)，無法賦予充分之雷射光之能量，對於雷射光之照射區域，無法直至玻璃基板之另一表面地加熱至玻璃氣化之溫度以上(對於玻璃基板之板厚方向之整個範圍無法充分地升溫)。因此，推斷無法切斷玻璃基板。 In other words, in the glass substrate to be evaluated by C, it is considered that the relative movement speed of the irradiation region of the laser light with respect to the glass substrate (the transport speed of the glass substrate) cannot provide sufficient energy of the laser light, and for the irradiation region of the laser beam, It is not possible to heat up to the temperature at which the glass is vaporized to the other surface of the glass substrate (the temperature cannot be sufficiently increased in the entire thickness direction of the glass substrate). Therefore, it is estimated that the glass substrate cannot be cut.
又，關於成為B評價之玻璃基板，相對於雷射光之照射區域相對於玻璃基板之相對移動速度(玻璃基板之搬送速度)，可照射充分之能量密度之雷射光，因此可進行玻璃基板之切斷。 In addition, the glass substrate to be evaluated by B can be irradiated with laser light having a sufficient energy density with respect to the relative moving speed of the irradiation region of the laser light to the glass substrate (the transport speed of the glass substrate), so that the glass substrate can be cut. Broken.
然而，推斷雷射光之照射區域相對於玻璃基板之相對移動速度(玻璃基板之搬送速度)不充分，雷射光照射後之雷射光照射部之周邊部之冷卻速度變慢，該周邊部未作為析出物被排除而殘留，因而切斷面變得不均一。或者，推斷於雷射光照射後之雷射光照射部之周邊部之溫度因搬送玻璃基板而冷卻時，由於並非所期望之冷卻速度，故而於切斷面及其周邊產生有龜裂。 However, it is estimated that the relative moving speed of the irradiation region of the laser light with respect to the glass substrate (the transport speed of the glass substrate) is insufficient, and the cooling rate of the peripheral portion of the laser beam irradiated portion after the laser light irradiation is slow, and the peripheral portion is not precipitated. The matter is removed and remains, so that the cut surface becomes uneven. Alternatively, it is estimated that when the temperature of the peripheral portion of the laser beam irradiation portion after the laser beam irradiation is cooled by the conveyance of the glass substrate, cracking occurs in the cut surface and the periphery thereof because the cooling rate is not desired.
相對於此，認為A評價之玻璃基板可與雷射光之照射區域相對於玻璃基板之相對移動速度(玻璃基板之搬送速度)相配合地適當地選擇雷射光之能量密度。因此，認為對於雷射光之照射區域，自玻璃基板之一表面至另一表面加熱至玻璃氣化之溫度以上。進而，由於玻璃基板之搬送速度適當，故而雷射光照射後之雷射光照射部之周邊部以適當之冷卻速度冷卻，且該雷射光照射後之雷射光照射部之周邊部作為 析出物被排除，從而可獲得均一之切斷面。 On the other hand, it is considered that the glass substrate of the A evaluation can appropriately select the energy density of the laser light in accordance with the relative moving speed of the irradiation region of the laser light with respect to the glass substrate (the transport speed of the glass substrate). Therefore, it is considered that the irradiation region of the laser light is heated from the surface of one of the glass substrates to the other surface to a temperature higher than the temperature at which the glass is vaporized. Further, since the conveyance speed of the glass substrate is appropriate, the peripheral portion of the laser beam irradiation portion after the laser beam irradiation is cooled at an appropriate cooling rate, and the peripheral portion of the laser beam irradiation portion after the laser beam irradiation is used as The precipitates are excluded so that a uniform cut surface can be obtained.
於本實驗例中，將進行切斷之玻璃基板之板厚設為0.2mm，除此以外，以與實驗例1相同之方式，改變雷射光之能量密度、雷射光之照射區域相對於玻璃基板之相對移動速度而切斷玻璃基板，並對切斷後之玻璃基板之切斷面進行評價。 In the present experimental example, the energy density of the laser light and the irradiation area of the laser light were changed with respect to the glass substrate in the same manner as in Experimental Example 1 except that the thickness of the glass substrate to be cut was set to 0.2 mm. The glass substrate was cut at a relative moving speed, and the cut surface of the cut glass substrate was evaluated.
將結果示於表2及圖5。圖5係將表2之結果圖表化而成者。 The results are shown in Table 2 and Figure 5. Figure 5 is a graph showing the results of Table 2.
於圖5所示之圖表中，直線X亦為成為上述E=50×t×v(t=0.2mm)之直線。 In the graph shown in Fig. 5, the straight line X is also a straight line which becomes the above E = 50 × t × v (t = 0.2 mm).
又，直線Y表示於冷卻步驟中產生有析出物之雷射光之照射區域相對於玻璃基板之相對移動速度(此處為玻璃基板之搬送速度)的最小值，該情形時為144(m/小時)。 Further, the straight line Y indicates the minimum value of the relative moving speed of the irradiation region of the laser light having the precipitate in the cooling step with respect to the glass substrate (here, the transport speed of the glass substrate), and in this case, it is 144 (m/hr). ).
據此，可確認於直線X與直線Y所包圍之範圍內分佈有A評價。 From this, it was confirmed that the A evaluation was distributed within the range surrounded by the straight line X and the straight line Y.
於本實驗例中，將進行切斷之玻璃基板之板厚設為0.3mm，除此以外，以與實驗例1相同之方式，改變雷射光之能量密度、雷射光之照射區域相對於玻璃基板之相對移動速度而切斷玻璃基板，並對切斷後之玻璃基板之切斷面進行評價。 In the present experimental example, the energy density of the laser light and the irradiation area of the laser light were changed with respect to the glass substrate in the same manner as in Experimental Example 1 except that the thickness of the glass substrate to be cut was set to 0.3 mm. The glass substrate was cut at a relative moving speed, and the cut surface of the cut glass substrate was evaluated.
將結果示於表3及圖6。圖6係將表3之結果圖表化而成者。 The results are shown in Table 3 and Figure 6. Figure 6 is a graph showing the results of Table 3.
[表3]
於圖6所示之圖表中，直線X亦為成為上述E=50×t×v(t=0.3mm)之直線。 In the graph shown in Fig. 6, the straight line X is also a straight line which becomes the above E = 50 × t × v (t = 0.3 mm).
又，直線Y表示於冷卻步驟中產生有析出物之雷射光之照射區域相對於玻璃基板之相對移動速度(此處為玻璃基板之搬送速度)的最小值，該情形時為144(m/小時)。 Further, the straight line Y indicates the minimum value of the relative moving speed of the irradiation region of the laser light having the precipitate in the cooling step with respect to the glass substrate (here, the transport speed of the glass substrate), and in this case, it is 144 (m/hr). ).
於本實驗例中，不改變玻璃基板之搬送速度，改變照射之雷射光之能量密度而進行玻璃基板之切斷。據此，於增加雷射光之能量密度而成為大於直線X之能量密度之情形時，對於雷射光之照射區域，可自玻璃基板之一表面至另一表面對雷射光照射部加熱至玻璃氣化之溫度以上，從而可確認成為A評價。 In this experimental example, the glass substrate was cut without changing the transport speed of the glass substrate and changing the energy density of the irradiated laser light. Accordingly, when the energy density of the laser light is increased to be greater than the energy density of the straight line X, the laser light irradiation portion can be heated to the glass gasification from one surface of the glass substrate to the other surface for the irradiation region of the laser light. Above the temperature, it was confirmed that it was an A evaluation.
於本實驗例中，將進行切斷之玻璃基板之板厚設為0.6mm，除此以外，以與實驗例1相同之方式，改變雷射光之能量密度、雷射光之照射區域相對於玻璃基板之相對移動速度而切斷玻璃基板，並對切斷後之玻璃基板之切斷面進行評價。 In the present experimental example, the energy density of the laser light and the irradiation area of the laser light were changed with respect to the glass substrate in the same manner as in Experimental Example 1 except that the thickness of the glass substrate to be cut was set to 0.6 mm. The glass substrate was cut at a relative moving speed, and the cut surface of the cut glass substrate was evaluated.
將結果示於表4及圖7。圖7係將表4之結果圖表化而成者。 The results are shown in Table 4 and Figure 7. Figure 7 is a graph showing the results of Table 4.
於圖7所示之圖表中，直線X亦為成為上述E=50×t×v(t=0.6mm)之直線。 In the graph shown in Fig. 7, the straight line X is also a straight line which becomes the above E = 50 × t × v (t = 0.6 mm).
又，直線Y表示於冷卻步驟中產生有析出物之雷射光之照射區域相對於玻璃基板之相對移動速度(此處為玻璃基板之搬送速度)的最小值，該情形時為144(m/小時)。 Further, the straight line Y indicates the minimum value of the relative moving speed of the irradiation region of the laser light having the precipitate in the cooling step with respect to the glass substrate (here, the transport speed of the glass substrate), and in this case, it is 144 (m/hr). ).
於本實驗例中，照射之雷射光之能量密度低於直線X。因此，認為相對於雷射光之照射區域相對於玻璃基板之相對移動速度(玻璃基板之搬送速度)，無法賦予充分之雷射光之能量，且對於雷射光之照射區域，無法直至玻璃基板之另一表面地加熱至玻璃基板氣化之溫度以上。因此，認為無法切斷玻璃基板而成為C評價。 In this experimental example, the energy density of the irradiated laser light is lower than the straight line X. Therefore, it is considered that the relative movement speed of the irradiation region of the laser light with respect to the glass substrate (the transport speed of the glass substrate) cannot provide sufficient energy of the laser light, and the irradiation region of the laser light cannot be used until the other of the glass substrate. The surface is heated to a temperature above the vaporization temperature of the glass substrate. Therefore, it is considered that the glass substrate cannot be cut and the C evaluation is performed.
本發明可利用於各種玻璃基板之切斷方法及各種玻璃基板之製造方法等。 The present invention can be utilized in various methods for cutting glass substrates, various methods for producing glass substrates, and the like.
本申請案係基於2012年6月28日向日本專利廳提出申請之日本專利特願2012-145991及2013年1月15日向日本專利廳提出申請之日本專利特願2013-004667者，主張該等申請案之優先權，且藉由參照將該等申請案之全部內容併入本文中。 This application is based on the Japanese Patent Application No. 2012-145991 filed on June 28, 2012, and the Japanese Patent Application No. 2013- 004, PCT filed on Jan. 15, 2013. The priority of the application is incorporated herein by reference.
11‧‧‧玻璃基板 11‧‧‧ glass substrate
12‧‧‧雷射光 12‧‧‧Laser light
13‧‧‧切斷預定線 13‧‧‧ cut the booking line
14‧‧‧已照射雷射光之區域 14‧‧‧A zone that has been exposed to laser light
15‧‧‧雷射光照射後之雷射光照射部 15‧‧‧Laser light irradiation after laser irradiation
A‧‧‧箭頭 A‧‧‧ arrow
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| US11459264B2 (en) * | 2017-02-07 | 2022-10-04 | Nippon Electric Glass Co., Ltd. | Method for producing glass film |
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