TWI595529B - A plasma processing chamber and its cooling device - Google Patents
A plasma processing chamber and its cooling device Download PDFInfo
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- TWI595529B TWI595529B TW103141172A TW103141172A TWI595529B TW I595529 B TWI595529 B TW I595529B TW 103141172 A TW103141172 A TW 103141172A TW 103141172 A TW103141172 A TW 103141172A TW I595529 B TWI595529 B TW I595529B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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Description
本發明涉及半導體製造領域，尤其涉及一種電漿處理腔室及其冷卻裝置。 The present invention relates to the field of semiconductor manufacturing, and in particular to a plasma processing chamber and a cooling device thereof.
電漿處理腔室利用真空反應室的工作原理進行半導體基片和電漿平板的基片的加工。真空反應室的工作原理是在真空反應室中通入含有適當蝕刻劑源氣體的反應氣體，然後再對該真空反應室進行射頻能量輸入，以啟動反應氣體，來激發和維持電漿，以便分別蝕刻基片表面上的材料層或在基片表面上沉積材料層，進而對半導體基片和電漿平板進行加工。 The plasma processing chamber utilizes the working principle of the vacuum reaction chamber to process the substrate of the semiconductor substrate and the plasma plate. The working principle of the vacuum reaction chamber is to pass a reaction gas containing a suitable etchant source gas into the vacuum reaction chamber, and then input the RF energy into the vacuum reaction chamber to start the reaction gas to excite and maintain the plasma, so as to respectively The semiconductor substrate and the plasma plate are processed by etching a layer of material on the surface of the substrate or depositing a layer of material on the surface of the substrate.
電漿處理腔室的系統溫度控制是非常關鍵的問題。電漿處理腔室系統本身除了腔室以外還包括許多組件，組件本身會產生熱量，如果熱量得不到疏散就會造成系統過熱，甚至對基片製程產生影響。以感應耦合型電漿(ICP)處理腔室為例，其頂部的溫度控制從來都是業內工程師持續關注的物件。這是由於感應耦合型電漿處理腔室的頂部設置有若干個感應耦合射頻發射裝置，例如射頻線圈。其中，射頻線圈連接有射頻功率源，當感應耦合型電漿處理腔室內部製程需要而點燃電漿時，射頻功率源通過向射頻線圈發送射頻能量，從而絕緣頂板上所有射頻線圈都會感應熱量。射頻線圈感應的射頻能量再加上腔室 內部的電漿熱量會使得感應耦合型電漿處理腔室的頂板部分達到非常高的溫度，甚至引起絕緣頂板破裂，組件時效或者製程的工藝參數漂移(process drift)。 System temperature control of the plasma processing chamber is a critical issue. The plasma processing chamber system itself includes a number of components in addition to the chamber. The components themselves generate heat. If the heat is not evacuated, the system will overheat and even affect the substrate process. Taking an inductively coupled plasma (ICP) processing chamber as an example, the temperature control at the top has always been an ongoing concern for engineers in the industry. This is due to the fact that the top of the inductively coupled plasma processing chamber is provided with a number of inductively coupled RF transmitting devices, such as RF coils. Wherein, the radio frequency coil is connected with an RF power source. When the inductively coupled plasma processing chamber needs to ignite the plasma, the RF power source sends RF energy to the RF coil, so that all RF coils on the insulating top plate sense heat. RF energy induced by the RF coil plus the chamber The internal plasma heat can cause the top plate portion of the inductively coupled plasma processing chamber to reach very high temperatures, even causing cracking of the insulating roof, component aging or process drift of the process.
圖1是習知技術的感應耦合型電漿處理腔室及其冷卻系統的結構示意圖。如圖1所示，感應耦合型電漿處理腔室100對應了一個冷卻裝置102。基片W放置於基台107上進行製程。冷卻裝置102是傳統的風扇，通過扇葉的高速旋轉帶走腔室熱量。 1 is a schematic view showing the structure of an inductively coupled plasma processing chamber of the prior art and a cooling system thereof. As shown in FIG. 1, the inductively coupled plasma processing chamber 100 corresponds to a cooling device 102. The substrate W is placed on the base 107 for processing. The cooling device 102 is a conventional fan that takes away heat from the chamber by high speed rotation of the blades.
但是由於傳統風扇的扇葉總是處於高速旋轉，因此也具有不可避免的缺陷。例如，傳統風扇的噪音水平總是正比於空氣流量。傳統風扇的扇葉部分也會佔用很多系統空間，如圖1所示，由於傳統風扇是一整片，並且感應耦合型電漿處理腔室100的頂部還必須設置很多其他組件，例如感應耦合型線圈104和射頻功率源105等。因此，冷卻裝置102只能與腔室呈一定角度傾斜地設置於腔室側面部分。這樣的位置並不利於冷卻裝置102帶走腔室頂部106的熱量，會造成一定的資源浪費。其次，冷卻裝置102由於是傳統風扇結構，因此也需要考慮安全方面的因素，應該被保護起來。 However, since the blades of the conventional fan are always rotated at a high speed, they also have inevitable defects. For example, the noise level of a conventional fan is always proportional to the air flow. The fan blade portion of the conventional fan also occupies a lot of system space, as shown in Fig. 1, since the conventional fan is a whole piece, and the top of the inductively coupled plasma processing chamber 100 must be provided with many other components, such as inductive coupling type. The coil 104 and the RF power source 105 and the like. Therefore, the cooling device 102 can only be disposed at an angle to the chamber at an angle to the side portion of the chamber. Such a location does not facilitate the removal of heat from the top 106 of the chamber by the cooling device 102, which can result in wasted resources. Secondly, since the cooling device 102 is a conventional fan structure, it is also necessary to consider safety factors and should be protected.
本發明正是基於此提出的。 The present invention has been made based on this.
針對背景技術中的上述問題，本發明提出了一種電漿處理腔室及其冷卻裝置。 In view of the above problems in the background art, the present invention proposes a plasma processing chamber and a cooling device therefor.
本發明第一方面提供了一種用於電漿處理腔室的冷卻裝置，所述冷卻裝置包括：中空框狀的出風組件，其主體上設置有多個出風口/出風帶， 固定於所述電漿處理腔室的頂板上；動力裝置，其連接於出風組件，用於驅動所述出風組件產生風力。進一步地，所述中空框狀的出風組件包括以下任一形狀：-三角形；-環形；-矩形；-梯形。 A first aspect of the present invention provides a cooling device for a plasma processing chamber, the cooling device comprising: a hollow frame-shaped air outlet assembly, the body of which is provided with a plurality of air outlets/outlet belts, Fixed to the top plate of the plasma processing chamber; a power device connected to the air outlet assembly for driving the air outlet assembly to generate wind power. Further, the hollow frame-shaped air outlet assembly comprises any of the following shapes: a triangle; a ring; a rectangle; a trapezoid.
進一步地，所述主體上的多個出風口分別包括對應於基片中央區域的中央出風口和對應於基片邊緣區域的邊緣出風口/出風帶。 Further, the plurality of air outlets on the main body respectively include a central air outlet corresponding to a central area of the substrate and an edge air outlet/outlet belt corresponding to the edge area of the substrate.
進一步地，所述主體上的多個出風帶包括設置於所述中空框狀的出風組件的內邊沿和/或外邊沿的出風口/出風帶。 Further, the plurality of air outlet belts on the main body include an air outlet/outlet belt disposed at an inner edge and/or an outer edge of the hollow frame-shaped air outlet assembly.
進一步地，所述出風組件包括相互連接的對應於絕緣頂板上方的第一部分和/或對應於腔室側面區域的第二部分。 Further, the air outlet assembly includes a second portion that is connected to each other corresponding to the first portion above the insulating top plate and/or to the side surface region of the chamber.
進一步地，所述主體上的多個出風口分別包括分別對應於基片中央區域和邊緣區域、射頻線圈和射頻電源以及臨近製程區域的腔室側壁的出風口/出風帶。 Further, the plurality of air outlets on the main body respectively include an air outlet/outlet belt corresponding to the central area and the edge area of the substrate, the radio frequency coil and the radio frequency power source, and the side wall of the chamber adjacent to the processing area.
進一步地，所述主體上的多個出風帶包括設置於所述中空框狀的出風組件的內邊沿和/或外邊沿的出風口/出風帶。 Further, the plurality of air outlet belts on the main body include an air outlet/outlet belt disposed at an inner edge and/or an outer edge of the hollow frame-shaped air outlet assembly.
進一步地，所述動力裝置包括：增壓葉輪組件，用於產生風力並輸送至出風口；電機，其連接於所述增壓葉輪組件並驅動所述增壓葉輪組件產生風力。 Further, the power unit includes a booster impeller assembly for generating wind power and delivering to an air outlet, and a motor coupled to the booster impeller assembly and driving the booster impeller assembly to generate wind power.
進一步地，所述動力裝置包括控制裝置，所述控制裝置用於控制增壓葉輪組件產生風力並輸送至出風口。 Further, the power unit includes a control device for controlling the booster impeller assembly to generate wind power and deliver it to the air outlet.
進一步地，所述控制裝置用於控制增壓葉輪組件產生風力並輸送至所述出風組件的任一出風口/出風帶，並控制每個出風口/出風帶產生的氣流強度。 Further, the control device is configured to control the pressurized impeller assembly to generate wind power and deliver to any of the air outlet/outlet belts of the air outlet assembly, and control the airflow intensity generated by each air outlet/outlet belt.
進一步地，所述動力裝置包括進風口，在所述進風口處設置有噪音減少裝置。 Further, the power unit includes an air inlet, and a noise reduction device is disposed at the air inlet.
進一步地，所述動力裝置包括進風口包括出風區域，在所述出風口區域設置有抽風裝置。 Further, the power device includes an air inlet including an air outlet region, and an air suction device is disposed in the air outlet region.
進一步地，所述出風組件是無扇葉的。 Further, the air outlet component is fanless.
本發明第二方面提供了一種電漿處理腔室，其中，包括本發明第一方面所述的冷卻裝置，所述冷卻裝置設置於所述電漿處理腔室的頂板之上。 A second aspect of the invention provides a plasma processing chamber, comprising the cooling device of the first aspect of the invention, the cooling device being disposed above a top plate of the plasma processing chamber.
進一步地，所述電漿處理腔室包括感應耦合型電漿處理腔室，所述冷卻裝置位於設置了感應耦合線圈和射頻功率源的絕緣頂板以上。 Further, the plasma processing chamber includes an inductively coupled plasma processing chamber located above an insulating top plate provided with an inductive coupling coil and a radio frequency power source.
本發明提供的電漿處理腔室及其冷卻裝置噪音小，易於清潔，節省腔室面積，降低功耗。本發明尤其適用於感應耦合型電漿處理裝置。 The plasma processing chamber and the cooling device provided by the invention have low noise, are easy to clean, save the chamber area and reduce power consumption. The invention is particularly applicable to inductively coupled plasma processing apparatus.
200‧‧‧感應耦合型電漿處理腔室 200‧‧‧Inductively coupled plasma processing chamber
201‧‧‧金屬側壁 201‧‧‧Metal sidewall
202‧‧‧氣體源 202‧‧‧ gas source
203a‧‧‧中心氣體注入口 203a‧‧‧Central gas injection port
203b‧‧‧邊緣氣體注入口 203b‧‧‧Edge gas injection port
204‧‧‧感應耦合射頻線圈 204‧‧‧Inductively coupled RF coil
205‧‧‧射頻功率源 205‧‧‧RF power source
206‧‧‧絕緣頂板 206‧‧‧Insulated roof
207‧‧‧基座 207‧‧‧Base
208‧‧‧抽真空泵 208‧‧‧vacuum pump
209、2091、2092、2093‧‧‧出風組件 209, 2091, 2092, 2093‧ ‧ vent components
2091a、2091b、2092a、2092b‧‧‧出風帶 2091a, 2091b, 2092a, 2092b‧‧‧ wind belt
2093a‧‧‧第一部分 2093a‧‧‧Part 1
2093b‧‧‧第二部分 2093b‧‧‧ part two
210‧‧‧動力裝置 210‧‧‧Powerplant
2101‧‧‧出風區域 2101‧‧‧Outlet area
2102‧‧‧增壓葉輪組件 2102‧‧‧Supercharged impeller assembly
2103‧‧‧電機 2103‧‧‧Motor
2104‧‧‧進風口 2104‧‧‧Air inlet
2105‧‧‧控制裝置 2105‧‧‧Control device
a、b‧‧‧出風口 a, b‧‧‧ outlet
c1‧‧‧第一出風口 C1‧‧‧first air outlet
c2‧‧‧第二出風口 C2‧‧‧second air outlet
c3‧‧‧第三出風口 C3‧‧‧ third air outlet
c4‧‧‧第四出風口 C4‧‧‧four outlet
P‧‧‧製程區域 P‧‧‧Process area
W‧‧‧基片 W‧‧‧ substrates
〔圖1〕是習知技術的感應耦合型電漿處理腔室及其冷卻裝置的結構示意圖； 〔圖2〕是根據本發明一個具體實施例的電漿處理腔室及其冷卻裝置的結構示意圖；〔圖3a〕~〔圖3b〕是根據本發明一個具體實施例的電漿處理腔室及其冷卻裝置的出風組件的結構示意圖；〔圖4〕是根據本發明另一具體實施例的電漿處理腔室及其冷卻裝置的結構示意圖；〔圖5〕是根據本發明另一具體實施例的電漿處理腔室及其冷卻裝置的出風組件的結構示意圖；〔圖6〕是根據本發明一個具體實施例的電漿處理腔室的冷卻裝置的動力裝置的結構示意圖。 FIG. 1 is a schematic structural view of an inductively coupled plasma processing chamber of the prior art and a cooling device thereof; 2 is a schematic structural view of a plasma processing chamber and a cooling device thereof according to an embodiment of the present invention; [Fig. 3a] to [Fig. 3b] are plasma processing chambers according to an embodiment of the present invention; Schematic diagram of the air outlet assembly of the cooling device; [Fig. 4] is a schematic structural view of a plasma processing chamber and a cooling device thereof according to another embodiment of the present invention; [Fig. 5] is another embodiment of the present invention. FIG. 6 is a schematic structural view of a power device of a plasma processing chamber cooling device according to an embodiment of the present invention. FIG.
以下結合附圖，對本發明的具體實施方式進行說明。 Specific embodiments of the present invention will be described below with reference to the accompanying drawings.
本發明適用於電漿處理腔室，下文將以感應耦合型電漿處理腔室為例進行說明，但是這不視為對本發明的限制。本領域中具有通常知識者應當理解，本發明適用於任何真空處理腔室，包括電漿處理腔室，例如電容耦合性電漿(CCP)處理腔室以及金屬有機氣相沉積(MOCVD)腔室等。 The present invention is applicable to a plasma processing chamber, and the following description will be made by taking an inductively coupled plasma processing chamber as an example, but this is not to be construed as limiting the invention. It will be understood by those of ordinary skill in the art that the present invention is applicable to any vacuum processing chamber, including plasma processing chambers, such as capacitively coupled plasma (CCP) processing chambers and metal organic vapor deposition (MOCVD) chambers. Wait.
圖2是根據本發明一個具體實施例的電漿處理腔室及其冷卻裝置的結構示意圖。圖2示出根據本發明一個實施例的感應耦合型電漿處理腔室200。應當理解，其中的感應耦合型電漿處理腔室200僅僅是示例性的，所述腔室200實際上也可以包括更少或額外的部件，部件的排列也可以不同於圖2中所示出。 2 is a schematic view showing the structure of a plasma processing chamber and a cooling device thereof according to an embodiment of the present invention. 2 illustrates an inductively coupled plasma processing chamber 200 in accordance with one embodiment of the present invention. It should be understood that the inductively coupled plasma processing chamber 200 therein is merely exemplary, and the chamber 200 may actually include fewer or additional components, and the arrangement of the components may also be different from that shown in FIG. .
感應耦合電漿處理腔室200包括金屬側壁201和絕緣頂板206，構成一個氣密的真空封閉殼體，並且由抽真空泵208抽真空。所述絕緣頂板206僅作為示例，也可以採用其它的頂板樣式，比如穹頂形狀的，帶有絕緣材料視窗的金屬頂板等。基座207包括一靜電夾盤(未示出)，所述靜電夾盤上放置著待處理的基片W。偏置功率被施加到所述靜電夾盤上，以產生對基片W的夾持力。所述感應耦合型電漿處理腔室200包括位於所述絕緣頂板206上的感應耦合射頻線圈204，用於發射射頻能量到所述封閉殼體內，反應氣體從氣體源202進入腔室內並在射頻能量的作用下激發成電漿，從而對基片進行製程。其中，所述反應氣體可以分別通過腔室的不同區域進入腔室內部，例如從中心氣體注入口203a或若干個邊緣氣體注入口203b。 The inductively coupled plasma processing chamber 200 includes a metal sidewall 201 and an insulating top plate 206 that form a hermetic vacuum enclosure and is evacuated by an evacuation pump 208. The insulating top plate 206 is by way of example only, and other top plate patterns may be used, such as dome-shaped, metal top plates with insulating material windows, and the like. The susceptor 207 includes an electrostatic chuck (not shown) on which the substrate W to be processed is placed. Bias power is applied to the electrostatic chuck to create a clamping force on the substrate W. The inductively coupled plasma processing chamber 200 includes an inductively coupled radio frequency coil 204 on the insulating top plate 206 for transmitting radio frequency energy into the enclosed housing, the reactive gas entering the chamber from the gas source 202 and at the radio frequency Under the action of energy, it is excited into a plasma to process the substrate. Wherein, the reaction gas can enter the chamber through different regions of the chamber, for example, from the central gas injection port 203a or the plurality of edge gas injection ports 203b.
其中，所述冷卻裝置包括中空框狀的出風組件209，其主體上設置有多個出風口，固定於感應耦合電漿處理腔室200的絕緣頂板206上。所述冷卻裝置還包括動力裝置210，其連接於出風組件209，用於驅動所述出風組件209產生風力。 The cooling device includes a hollow frame-shaped air outlet assembly 209, and a plurality of air outlets are disposed on the main body, and are fixed on the insulating top plate 206 of the inductively coupled plasma processing chamber 200. The cooling device further includes a power unit 210 coupled to the air outlet assembly 209 for driving the air outlet assembly 209 to generate wind power.
可選地，所述中空框狀的出風組件可以具有形狀，例如三角形、環形、矩形、梯形等。附圖3a示出了環形的出風組件2091，如圖所示，可選地，在環形的出風組件2091的環形主體上可以設置若干個出風口a。出風口a可以以特定距離均勻地排布在環形主體上，也可以離散地沒有規律地排布在環形主體上的任何位置。可選地，環形的出風組件2091也可以在環形主體內環邊沿設置一個出風帶2091a，也可以在環形主體的外環邊沿設置一個出風帶2091b，或者也可以在內環邊沿和外環邊沿之間的某個區域設置一個環形出風帶。附圖3b示出 了矩形的出風組件2092，如圖所示，可選地，在矩形的出風組件2092的矩形主體上可以設置若干個出風口b。出風口b可以以特定距離均勻地排布在矩形主體上，也可以離散地沒有規律地排布在矩形主體上的任何位置。可選地，矩形的出風組件2092也可以在矩形主體內內邊沿設置一個出風帶2092a，也可以在矩形主體的外邊沿設置一個出風帶2092b，或者也可以在內邊沿和外邊沿之間的某個區域設置一個矩形出風帶。 Alternatively, the hollow frame-shaped air outlet assembly may have a shape such as a triangle, a ring, a rectangle, a trapezoid or the like. Figure 3a shows an annular air outlet assembly 2091, as shown, optionally with a plurality of air outlets a on the annular body of the annular air outlet assembly 2091. The air outlets a may be evenly arranged on the annular body at a certain distance, or may be discretely arranged irregularly at any position on the annular body. Optionally, the annular air outlet component 2091 may also be provided with an air outlet belt 2091a at the inner ring edge of the annular body, or an air outlet belt 2091b may be disposed at the outer ring edge of the annular body, or may be located at the inner ring edge and outside. An annular air outlet is provided in an area between the edges of the ring. Figure 3b shows A rectangular air outlet assembly 2092, as shown, optionally, a plurality of air outlets b may be provided on the rectangular body of the rectangular air outlet assembly 2092. The air outlets b may be evenly arranged on the rectangular body at a certain distance, or may be discretely arranged irregularly at any position on the rectangular body. Optionally, the rectangular air outlet component 2092 may also be provided with an air outlet belt 2092a at the inner edge of the rectangular body, or an air outlet belt 2092b may be disposed at the outer edge of the rectangular body, or may be provided with an inner edge and an outer edge. A rectangular air outlet is set in an area between the two.
需要說明的是，上述實施例中提及的出風口或者出風帶可以以擇一的方式設置於出風組件上，也可以將幾種類型的出風口或者出風帶同時設置在出風組件上。具體出風區域的設置應當符合腔室硬體要求或者工藝需求。例如，由於感應耦合型電漿處理腔室200的頂部設置有若干個感應耦合射頻發射裝置，例如射頻線圈。 It should be noted that the air outlet or the air outlet belt mentioned in the above embodiment may be disposed on the air outlet component in an alternative manner, or several types of air outlets or air outlet belts may be simultaneously disposed on the air outlet component. on. The specific outlet area should be set to meet the chamber hardware requirements or process requirements. For example, since the top of the inductively coupled plasma processing chamber 200 is provided with a number of inductively coupled RF transmitting devices, such as radio frequency coils.
其中，射頻線圈204連接有射頻功率源205，當感應耦合型電漿處理腔室200內部製程需要而點燃電漿時，射頻功率源205通過向射頻線圈204發送射頻能量，從而絕緣頂板206上所有射頻線圈204都會感應熱量。射頻線圈204感應的射頻能量再加上腔室內部的電漿熱量(如圖2所示，感應耦合型電漿處理腔室200的基片W以上的製程區域P非常靠近絕緣頂板206)會使得感應耦合型電漿處理腔室200的絕緣頂板206部分達到非常高的溫度。因此，本發明可以感應耦合型電漿處理腔室200的絕緣頂板206上面設置冷卻裝置，具體地，尤其可以在每個射頻線圈204的頂部對應設置各個通風口和通風帶。 The RF coil 204 is connected to the RF power source 205. When the internal processing of the inductively coupled plasma processing chamber 200 requires the plasma to be ignited, the RF power source 205 transmits all the RF energy to the RF coil 204, thereby insulating all the top plates 206. The RF coil 204 senses heat. The RF energy induced by the RF coil 204 is added to the plasma heat inside the chamber (as shown in Figure 2, the process area P above the substrate W of the inductively coupled plasma processing chamber 200 is very close to the insulating top 206). The portion of the insulating top plate 206 of the inductively coupled plasma processing chamber 200 reaches a very high temperature. Therefore, the present invention can provide a cooling device on the insulating top plate 206 of the inductively coupled plasma processing chamber 200. Specifically, in particular, each of the vents and the venting strip can be disposed at the top of each of the RF coils 204.
圖4是根據本發明另一具體實施例的電漿處理腔室及其冷卻裝置的結構示意圖。圖5是根據本發明另一具體實施例的電漿處理腔室及其冷卻裝置 的出風組件的結構示意圖。參照圖4和圖5，所述出風組件2093包括位於感應耦合型電漿處理腔室200的絕緣頂板206上方的第一部分2093a，以及位於感應耦合型電漿處理腔室200腔室兩側的第二部分2093b。其中，在所述出風組件2093的第一部分2093a和第二部分2093b都分別設置了多個區域的出風口。具體地，其第一部分2093a上設置有對應於基片W的中央區域部分的第一出風口c1和對應於基片W的邊緣區域的第二出風口c2。同時，其第二部分2093b還設置有對應於冷卻射頻線圈204以及射頻功率源205的第三出風口c3，以及對應於製程區域P腔室側壁的第四出風口c4。因此，當腔室內製程出現溫度不均一的情況時，例如基片W的中央區域蝕刻速率較快時，則可以控制第一出風口c1對基片W的中央區域進行冷卻，反之，當基片W的中央區域蝕刻速率較快時，則可以控制第二出風口c2對基片W的邊緣區域進行冷卻。或者，也可以控制第一出風口c1或者第二出風口c2在不同的出風速率，以達到對基片W的不同區域的不同冷卻程度。可選地，當射頻線圈204及其射頻功率源205或者任何其他設置於感應耦合型電漿處理腔室200的絕緣頂板206上方的系統組件需要冷卻時，可以控制第三出風口c3進行冷卻。當腔室側壁201對應於製程區域P的部分區域溫度過高時，可以控制第四出風口c4進行冷卻。當然，也可以分別控制第三出風口c3和第四出風口c4以達到不同的冷卻程度。 4 is a schematic view showing the structure of a plasma processing chamber and a cooling device thereof according to another embodiment of the present invention. FIG. 5 is a plasma processing chamber and a cooling device thereof according to another embodiment of the present invention. Schematic diagram of the outlet assembly. Referring to Figures 4 and 5, the air outlet assembly 2093 includes a first portion 2093a over the insulating top plate 206 of the inductively coupled plasma processing chamber 200, and is located on either side of the chamber of the inductively coupled plasma processing chamber 200. The second part 2093b. Wherein, the first portion 20093a and the second portion 2093b of the air outlet component 2093 are respectively provided with air outlets of a plurality of regions. Specifically, the first portion 2093a is provided with a first air outlet c1 corresponding to a central portion of the substrate W and a second air outlet c2 corresponding to an edge region of the substrate W. At the same time, the second portion 2093b is further provided with a third air outlet c3 corresponding to the cooling RF coil 204 and the RF power source 205, and a fourth air outlet c4 corresponding to the sidewall of the process area P chamber. Therefore, when the temperature in the chamber process is not uniform, for example, when the central region of the substrate W is etched faster, the first air outlet c1 can be controlled to cool the central region of the substrate W, and vice versa. When the etching rate of the central region of W is faster, the second air outlet c2 can be controlled to cool the edge region of the substrate W. Alternatively, the first air outlet c1 or the second air outlet c2 may be controlled at different air outlet rates to achieve different degrees of cooling to different regions of the substrate W. Alternatively, when the RF coil 204 and its RF power source 205 or any other system component disposed above the insulating top plate 206 of the inductively coupled plasma processing chamber 200 require cooling, the third air outlet c3 may be controlled for cooling. When the temperature of a portion of the chamber side wall 201 corresponding to the process area P is too high, the fourth air outlet c4 may be controlled to perform cooling. Of course, the third air outlet c3 and the fourth air outlet c4 can also be separately controlled to achieve different degrees of cooling.
進一步地，所述出風組件的主體上的多個出風帶包括設置於所述中空框狀的出風組件的內邊沿和/或外邊沿的出風口/出風帶。 Further, the plurality of air outlet belts on the main body of the air outlet assembly include an air outlet/outlet belt disposed at an inner edge and/or an outer edge of the hollow frame-shaped air outlet assembly.
圖6是根據本發明一個具體實施例的電漿處理腔室的冷卻裝置的動力裝置的結構示意圖。如圖6所示，其中，所述動力裝置210包括增壓葉輪組 件2102，其用於產生風力並輸送至出風口。所述動力裝置210還包括電機2103，其連接於所述增壓葉輪組件2102並驅動所述增壓葉輪組件2102產生風力。至於增壓葉輪組件2102和電機2103的具體結構和功能在習知技術中已有成熟技術支援，例如，增壓葉輪組件2102可以包括空氣導向片、出風導葉、轉子葉輪、外轉子電機和導葉等，空氣導向片位於增壓葉輪組件2102的上部，主要用於引導空氣從動力裝置210流出，從而進入到冷卻裝置的出風組件內。也是示例性地，電機2103採用外轉子電機，定子安裝在轉子內部，轉子上設置轉子葉輪。 6 is a schematic view showing the structure of a power unit of a cooling device for a plasma processing chamber according to an embodiment of the present invention. As shown in FIG. 6, wherein the power device 210 includes a pressurized impeller group A piece 2102 for generating wind power and delivering it to the air outlet. The powerplant 210 also includes a motor 2103 coupled to the booster impeller assembly 2102 and driving the booster impeller assembly 2102 to generate wind power. The specific structure and function of the booster impeller assembly 2102 and the motor 2103 are well supported in the prior art. For example, the booster impeller assembly 2102 can include an air guide vane, an air guide vane, a rotor impeller, an outer rotor motor, and Guide vanes and the like, the air guiding piece is located at the upper portion of the pressurized impeller assembly 2102, and is mainly used for guiding air to flow out of the power unit 210 to enter the air outlet assembly of the cooling device. Also by way of example, the motor 2103 employs an outer rotor motor with the stator mounted inside the rotor and a rotor wheel disposed on the rotor.
進一步地，所述動力裝置210包括控制裝置2105，所述控制裝置2105用於控制增壓葉輪組件2102產生風力並輸送至出風口。 Further, the power unit 210 includes a control device 2105 for controlling the booster impeller assembly 2102 to generate wind power and deliver it to the air outlet.
進一步地，所述控制裝置2105用於控制增壓葉輪組件產生風力並輸送至所述出風組件209的任一出風口/出風帶，並控制每個出風口/出風帶產生的氣流強度。本領域中具有通常知識者應當理解，控制裝置2105的具體結構和功能在習知技術中已有成熟的支援，為簡明起見，不再贅述。 Further, the control device 2105 is configured to control the booster impeller assembly to generate wind power and deliver to any air outlet/outlet belt of the air outlet assembly 209, and control the airflow intensity generated by each air outlet/outlet belt . It should be understood by those of ordinary skill in the art that the specific structure and function of the control device 2105 are well supported in the prior art and will not be described again for the sake of brevity.
進一步地，所述動力裝置210包括進風口2104，在所述進風口2104處設置有噪音減少裝置，從而進一步地減少冷卻裝置的噪音。 Further, the power unit 210 includes an air inlet 2104, and a noise reduction device is disposed at the air inlet 2104 to further reduce noise of the cooling device.
進一步地，所述動力裝置210包括出風區域2101，在所述出風口區域設置有抽風裝置，從而進一步地加強冷卻空氣地流通，從而加強冷卻效果。 Further, the power unit 210 includes an air outlet region 2101, and an air suction device is disposed in the air outlet region to further enhance the circulation of the cooling air to enhance the cooling effect.
本發明第二方面提供了一種電漿處理腔室，其中，所述電漿處理腔室包括上文所述的冷卻裝置，所述冷卻裝置設置於所述電漿處理腔室的頂板之上。 A second aspect of the invention provides a plasma processing chamber, wherein the plasma processing chamber comprises a cooling device as described above, the cooling device being disposed above a top plate of the plasma processing chamber.
進一步地，所述電漿處理腔室包括感應耦合型電漿處理腔室，所述冷卻裝置位於設置了感應耦合線圈和射頻功率源的絕緣頂板以上。 Further, the plasma processing chamber includes an inductively coupled plasma processing chamber located above an insulating top plate provided with an inductive coupling coil and a radio frequency power source.
本發明提供的冷卻裝置的動力裝置和出風組件的結構是分離的，可以只在腔室內部設置出風組件，而出風組件是空中的框架結構，原本需要在電漿處理裝置的頂板上設置的多個組件都可以在框架結構的中空區域設置，大大節省了空間。並且，由於框架結構和腔室組件集成在一起，距離較近，也更易於冷卻。同時，本發明提供的出風組件只有框架結構，因此更加易於清洗。此外，本發明提供的出風組件直接設置在腔室頂板上方，因此相對於習知技術設置在側面的冷卻裝置(參見圖1)更加容易降低溫度，節省了能耗。本發明還進步地採用了針對腔室和基片的多個區域分別進行控制，不僅可以控制哪個區域的出風口/出風帶打開關閉，還能控制每個出風口/出風帶的風力強度，能夠改善製程的溫度均一性，提高系統的穩定性。本發明提供的冷卻裝置是無扇葉的，因此更加節省腔室空間。 The structure of the power unit and the air outlet assembly of the cooling device provided by the present invention is separate, and the air outlet assembly can be disposed only inside the chamber, and the air outlet assembly is a frame structure in the air, which is originally required on the top plate of the plasma processing device. Multiple components can be placed in the hollow area of the frame structure, saving a lot of space. Also, since the frame structure and the chamber components are integrated, the distance is closer and the cooling is easier. At the same time, the air outlet assembly provided by the present invention has only a frame structure and is therefore easier to clean. In addition, the air outlet assembly provided by the present invention is directly disposed above the ceiling of the chamber, so that the cooling device (see FIG. 1) disposed on the side with respect to the prior art is more likely to lower the temperature and save energy. The invention also progressively adopts separate control for the plurality of regions of the chamber and the substrate, not only can control which region of the air outlet/outlet belt is opened and closed, but also control the wind strength of each air outlet/outlet belt. It can improve the temperature uniformity of the process and improve the stability of the system. The cooling device provided by the invention is fanless, thus saving more room space.
儘管本發明的內容已經通過上述優選實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域中具有通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的請求項來限定。此外，不應將請求項中的任何附圖標記視為限制所涉及的請求項；“包括”一詞不排除其它請求項或說明書中未列出的裝置或步驟；“第一”、“第二”等詞語僅用來表示名稱，而並不表示任何特定的順序。 Although the present invention has been described in detail by the preferred embodiments thereof, it should be understood that the foregoing description should not be construed as limiting. Various modifications and alterations of the present invention will be apparent to those of ordinary skill in the art. Accordingly, the scope of the invention should be defined by the appended claims. In addition, any reference signs in the claim should not be construed as limiting the claim. The term "comprising" does not exclude the other claim or the means or steps not listed in the specification; "first", " Words such as "two" are used only to denote a name, and do not denote any particular order.
200‧‧‧感應耦合型電漿處理腔室 200‧‧‧Inductively coupled plasma processing chamber
201‧‧‧金屬側壁 201‧‧‧Metal sidewall
202‧‧‧氣體源 202‧‧‧ gas source
203a‧‧‧中心氣體注入口 203a‧‧‧Central gas injection port
203b‧‧‧邊緣氣體注入口 203b‧‧‧Edge gas injection port
204‧‧‧感應耦合射頻線圈 204‧‧‧Inductively coupled RF coil
205‧‧‧射頻功率源 205‧‧‧RF power source
206‧‧‧絕緣頂板 206‧‧‧Insulated roof
207‧‧‧基座 207‧‧‧Base
208‧‧‧抽真空泵 208‧‧‧vacuum pump
209‧‧‧出風組件 209‧‧‧Outlet components
210‧‧‧動力裝置 210‧‧‧Powerplant
P‧‧‧製程區域 P‧‧‧Process area
W‧‧‧基片 W‧‧‧ substrates
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- 2013-12-13 CN CN201310687365.1A patent/CN104715992B/en active Active
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2014
- 2014-11-27 TW TW103141172A patent/TWI595529B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3045481A (en) * | 1961-01-18 | 1962-07-24 | Edgar A Bunt | Hypersonic wind tunnel |
| TW278204B (en) * | 1995-06-07 | 1996-06-11 | Materials Research Corp | Plasma sputter etching system with reduced particle contamination |
| TW200710254A (en) * | 2005-09-02 | 2007-03-16 | Atomic Energy Council | Plasma surface treatment apparatus |
| TW201026961A (en) * | 2009-01-08 | 2010-07-16 | Delta Electronics Inc | Ventilator and impeller thereof |
| TW201126603A (en) * | 2009-05-01 | 2011-08-01 | Tokyo Electron Ltd | Plasma process apparatus and plasma process method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104715992A (en) | 2015-06-17 |
| CN104715992B (en) | 2018-02-09 |
| TW201528326A (en) | 2015-07-16 |
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