KR101703499B1 - Apparatus and Method for Photo-resist Ashing process - Google Patents

Apparatus and Method for Photo-resist Ashing process Download PDF

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Publication number
KR101703499B1
KR101703499B1 KR1020160090282A KR20160090282A KR101703499B1 KR 101703499 B1 KR101703499 B1 KR 101703499B1 KR 1020160090282 A KR1020160090282 A KR 1020160090282A KR 20160090282 A KR20160090282 A KR 20160090282A KR 101703499 B1 KR101703499 B1 KR 101703499B1
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South Korea
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chamber
plasma
side wall
sidewall
reaction gas
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KR1020160090282A
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Korean (ko)
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박세열
김기범
이용호
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주식회사 피에스티에이치
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

An embodiment of the present invention includes: a chamber including a reaction space; a substrate support part rotating a plurality of substrates vertically stacked in the reaction space; a spray part placed on a first side wall to spray reaction gas to a side of the substrates in the reaction space; a plasma generating part placed on the first side wall to activate the reaction gas into plasma; an exhaust part placed on a second side wall which is opposite to the first side wall; a gate door placed on a third side wall, connecting the first and second side walls of the chamber, to open or close a passage loading or unloading the substrates; and a control part activating the reaction gas in the reaction space into plasma while rotating the substrate support part after closing the gate door once the substrates are loaded into the substrate support part. As such, the present invention is capable of maintaining the uniformity of an activator over a wafer while preventing a loss of the activator.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a photoresist stripping apparatus,

The present invention relates to a photoresist stripping apparatus, and more particularly, to a photoresist stripping apparatus and a stripping method capable of effectively performing photoresist stripping of a substrate.

When various electronic devices such as semiconductor memories are manufactured on a substrate, various thin films and processes are required. That is, when a semiconductor device is manufactured, various thin films are formed on a substrate, and the device structure is formed by patterning the thin film thus formed by repeatedly using the photolithography process and the photolithography process. Particularly, as a method of peeling the photoresist, a physical method, a chemical method, a method using plasma, or the like can be used.

1 to 4 are block diagrams of a conventional photoresist stripping apparatus using plasma.

The plasma-assisted photoresist stripping (PR ashing or PR stripping) apparatus activates the gas introduced into the chamber by a plasma, and reacts with a photoresist or the like on the substrate W to remove the photoresist. Or a plasma is generated from the outside of the chamber to introduce the active species into the chamber and react with the photoresist on the substrate W to remove the photoresist.

FIG. 1 shows a plasma generating apparatus in which a vacuum insulator is provided in a chamber, a gas introducing portion and an exhaust port are formed in an insulator, and plasma is applied to the outside of the insulator. However, in FIG. 1, non-uniformity of plasma occurs between the substrates and in the substrate, and there is a limitation in the processing capability due to manual loading.

In addition, the chamber shown in Fig. 2 has a main body having an open top and a top lead 10b provided on the top of the main body so as to be openable and closable. Topred is composed of an insulator.

The substrate support has a support plate for supporting the substrate. The support plate has a disk shape in a horizontal direction inside the chamber, a heater is formed inside the support plate, a device for controlling the temperature is provided, and the temperature of the wafer is raised to facilitate peeling of the photoresist. The gas jetting body is spaced apart from the upper portion of the support plate and injects the process gas such as the raw material, the carrier gas, the reaction gas, and the auxiliary gas, The gas jetting body may be embodied as a dispersion plate such as a shower head.

The plasma generating unit generates a plasma in the chamber to excite various process gases into an active species state. To this end, a plasma generating portion is connected to a power supply means, and a plasma can be excited into a reaction space in the chamber.

FIGS. 3 and 4 may also be implemented in a remote plasma mode in which a gas is injected into the active species state by plasma excitation in a gas injection body coupled to the chamber using an external insulation chamber or outside of the chamber have. As a result, various gases (or active species) are supplied to the upper portion of the substrate through the gas jetting body and the active paper is supplied onto the substrate W in the chamber to peel off. Residual gases and byproducts are discharged to the outside through the exhaust pipe do.

Such a device also has a support plate having a substrate support as a structure for supporting the substrate. The support plate has a disk shape in a horizontal direction inside the chamber, a heater is formed inside the support plate, a device for controlling the temperature is provided, and the temperature of the wafer is raised to facilitate peeling of the photoresist.

However, in the related art, a showerhead, which is a gas injection chain, is provided on the upper side of the chamber to improve the uniformity of the substrate. However, there is a problem that the active species of the plasma is decreased. In addition, although a method of processing one substrate for each chamber in accordance with the large-scale curing of the substrate is adopted, there is a problem that the productivity is deteriorated due to the limitation of the processing capacity due to the limitation of the number of chambers and the number of chambers.

SUMMARY OF THE INVENTION The present invention provides a photoresist stripping apparatus capable of effectively removing a photoresist on a substrate.

An embodiment of the present invention includes a chamber having a reaction space therein; A substrate support for rotating a plurality of vertically stacked substrates in a reaction space; A reaction gas spraying unit provided on the first sidewall and spraying a reaction gas toward the side surface of the substrate in the reaction space; A plasma generator provided on the first sidewall, the plasma generator activating the reaction gas; An exhaust part provided on a second sidewall which is an opposite side wall of the first sidewall; A gate door provided on a third sidewall connecting the first sidewall and the second sidewall of the chamber to open and close a passage through which the substrate is loaded or unloaded; And a controller for closing the gate door, rotating the substrate support, and activating the reaction gas in the reaction space by plasma when the substrate is loaded on the substrate support.

Wherein the exhaust section comprises: a baffle plate formed on an inner surface of the second sidewall facing the reaction space; A dust collector having an exhaust passage through which the reaction gas passing through the baffle plate is collected and discharged to the outside; And an exhaust pipe provided on an outer surface of the second sidewall and connected to the exhaust passage.

The plasma generating unit includes: a high frequency coil for generating a high frequency; An insulation tube enclosing the high frequency coil, the insulation tube being provided inside the wall of the first side wall; And a power supply unit for supplying power to the high-frequency coil.

Wherein the insulation tubes are arranged in a plurality of lines in the vertical direction of the first sidewalls and the intervals between the lines where the insulation tubes are arranged are set such that the intervals between the lines in which the insulation tubes are arranged are uniform, To the ground plane.

The plasma generating unit includes: an insulating plate (143) coupled to an outer surface of the first sidewall; A high frequency coil attached to the outer surface of the insulating plate 143; And a power supply unit for supplying power to the high-frequency coil.

The high frequency coils are arranged in the form of a plurality of lines in the vertical direction of the insulating plate 143. The spacing between the lines in which the high frequency coils are arranged is uniformly or densely arranged from the power supply portion of the insulating plate to the ground plane .

The plasma generating unit may generate plasma by any one of high frequency induction coupled plasma (ICP) and microwave plasma.

The baffle plate may be characterized in that it has a structure that allows the exhaust gas to flow toward the outside or toward the opposite side with respect to the exhaust pipe.

Further, in the method of peeling the photoresist using the photoresist peeling apparatus, the photoresist can be peeled from the substrate by generating a plasma by any one of high-frequency inductively coupled plasma (ICP) and microwave plasma.

In the method of peeling the photoresist using the photoresist peeling apparatus, the baffle plate can be peeled off from the exhaust pipe centered on the outside or on the opposite side.

In the present invention, it is possible to prevent the loss of the active species and to maintain the uniformity in the wafers by using a dispersing plate disposed near the exhausting portion rather than the shower head, which is a gas jet, to prevent the loss of active species.

In addition, according to the recent technology for large-scale curing of the substrate W, a method of processing one wafer for each chamber is adopted, but there is a limitation in the processing capacity due to the limitation of the number of chambers and the number of chambers. However, A plurality of wafers can be used at the same time, and a large amount of processing capability can be realized.

Further, in the related art, a plurality of transfer robots are required to transfer a plurality of substrates. However, the present invention can have a cost saving effect as a structure for transferring a plurality of substrates directly to a chamber.

Also, conventionally, the substrate has a processing capability of 10um / min per one sheet, but in the present invention, it can have a processing capacity of 50um / min per sheet due to batch processing.

Conventionally, the present invention has a capacity of about 600 sheets / hour even in the case of using only two chambers for a maximum of about 300 sheets / hour with a plurality of chambers (up to six chambers) Lt; / RTI >

1 to 4 are sectional views of a conventional photoresist stripping apparatus.
5 is a perspective view of a photoresist stripping apparatus according to an embodiment of the present invention.
6 is a perspective view showing a state in which a high-frequency coil is embedded in a wall of a chamber according to the first embodiment of the present invention;
FIG. 7 is a perspective view showing a state in which a high-frequency coil is coupled to an outer surface of a wall of a chamber according to a second embodiment of the present invention; FIG.
FIG. 8 is a view illustrating a baffle plate disposed so as to be exhausted toward the edge according to an embodiment of the present invention; FIG.
9 is a cross-sectional view showing a state in which plasma is sprayed to one side of a substrate and exhausted to the other side of the opposite side according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to achieve them, will be apparent from the following detailed description of embodiments thereof taken in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art. And the present invention is only defined by the scope of the claims. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

FIG. 5 is a perspective view of a photoresist stripping apparatus according to an embodiment of the present invention, FIG. 6 is a perspective view showing a state where a high-frequency coil is embedded in a wall of a chamber according to the first embodiment of the present invention, FIG. 8 is a perspective view illustrating a state in which a high frequency coil is coupled to an outer surface of a wall of a chamber according to a second embodiment of the present invention. FIG. 8 is a perspective view of a baffle plate FIG. 9 is a cross-sectional view illustrating plasma spraying to one side of a substrate according to an embodiment of the present invention and exhausting the plasma to the other side of the opposite side.

The photoresist stripping apparatus of the present invention includes a chamber 1, a gate door 110, a substrate support 120, a reaction gas spraying unit 130, a plasma generating unit 140, an exhaust unit 150, Not shown).

The chamber 1 is a means for providing a space for processing a process such as photoresist peeling or the like for the substrate W. The chamber 1 is provided with a predetermined internal space (hereinafter referred to as a reaction space) . The chamber 1 may have a reaction space having a predetermined space including a substantially circular planar portion and side walls upwardly extending from the planar portion and a top wall. The shape of the chamber 1 generally has a rectangular tube shape, but may have various other shapes, if not such a shape. The reaction space should also generally be formed in a vacuum atmosphere.

The first side wall 100a of the chamber 1 is provided with a reaction gas injection part 130 which will be described later and the second side wall 100b located on the opposite side of the one side wall of the chamber 1, An exhaust portion 150 is formed. A through hole (not shown) is formed in the lower wall of the chamber 1 to insert a rotation axis of a substrate support 120, which will be described later.

A gate door 110 for loading or unloading the substrate into or from the chamber 1 is formed in a third side wall 100c connecting the first side wall 100a and the second side wall 100b of the chamber 1, . The gate door 110 is provided on a third side wall 100c connecting the first sidewall 100a and the second sidewall 100b of the chamber 1 to open a passage through which the substrate is loaded or unloaded, Or close it. Thus, the gate door 110 is opened when the substrate is loaded into the reaction space in the chamber 1, and the gate door 110 is closed while the photoresist stripping process is being performed. The gate door 110 is opened when the substrate on which the photoresist stripping process is completed is discharged to the outside.

The substrate support 120 is a support for rotating a plurality of vertically stacked substrates. The substrate support 120 includes a shaft support 122 for supporting the substrate support 121 and a motor (not shown) for rotating the shaft shaft 122, do. Here, the substrate support 121 is formed in the reaction space of the chamber 1 to be rotatable by being coupled to the drive shaft, and may be provided in a substantially circular shape and may be provided in a shape corresponding to the shape of the substrate, ). The shaft 121 also passes through the lower wall of the chamber 1 to connect the motor (not shown) and the substrate support 122. The substrate support 122 rotates in parallel to the direction perpendicular to the ejecting direction of the reactive gas ejecting unit 130. Also, for reference, the substrate support is a module in which a plurality of substrates W are stacked, can be loaded into the chamber 1 through the transfer door or the like through the gate door 110 or unloaded and taken out of the chamber 1 .

The reactive gas injecting section 130 is a means provided in the first sidewall 100a for injecting the reactive gas toward the side surface of the substrate placed in the reaction space. The reaction gas injecting section 130 includes a reaction gas storage section provided outside the chamber 1 and a reaction gas supply tube for supplying the reaction gas into the reaction space in the chamber 1 although not shown. The reaction gas spraying unit 130 injects the reaction gas toward the side surfaces of the plurality of stacked substrates so that the reaction gas can be uniformly transferred to the upper surface of the plurality of vertically stacked substrates W.

The plasma generator 140 is a means provided in the first sidewall 100a for plasma-activating the reaction gas supplied through the reactive gas sprayer 130. [ The plasma generating section 140 includes a high frequency coil 141 provided in the first sidewall 100a of the chamber 1 and a power supply section (not shown) supplying a predetermined power to the high frequency coil 141 .

Therefore, when power is supplied from the power supply unit to the high-frequency coil 141, a magnetic field is generated from the high-frequency coil 141 to activate the reactive gas in a plasma state. Therefore, the plasma generating unit 140 can generate plasma by any one of high-frequency inductively coupled plasma (ICP) and microwave plasma. By using such an ICP or microwave type, plasma activation can be actively performed and the plasma density can be increased.

On the other hand, the high-frequency coil 141 may be provided on the side wall of the chamber 1 as the following two embodiments.

6, an insulating tube 141a is disposed inside a wall of the first side wall 100a of the chamber 1, and a high frequency coil 141 is disposed inside the insulating tube 141a. . Therefore, the insulating tube 141a functions as a tube tube surrounding the high-frequency coil 141, and is disposed in the interior of the wall of the first sidewall 100a of the chamber 1. [ Therefore, the plasma can be induced by the insulating tube 141a provided inside the wall of the first sidewall 100a of the chamber 1. [ The insulating tubes 141a of the high-frequency coil 141 are arranged in a plurality of lines in the vertical direction of the first sidewall 100a. The intervals between the lines where the insulating tubes 141a are disposed may be equally arranged at the intervals of the lines where the insulating tubes are disposed. However, in another embodiment, the spacing between the lines may be densely arranged from the power supply portion of the first side wall to the ground plane . Generally, since the plasma is formed in the power supply part, the insulating tube 141a of the high-frequency coil 141 is densely disposed on the opposite side of the power supply part to induce plasma having a uniform distribution as a whole.

7, an insulating plate 143 coupled to the outer surface of the first sidewall 100a of the chamber 1 is disposed, and a high-frequency And the coil 141 is attached. The plasma can be induced inside the first side wall 100a of the chamber 1 by the high frequency coil 141 located outside the insulating plate 143. [ At this time, the high-frequency coil 141 is arranged in a plurality of lines in the vertical direction of the insulating plate 143, and the intervals between the lines of the high-frequency coil 141 attached to the outer surface of the insulating plate 143 are uniform have. Or from the power supply portion of the insulating plate to the ground plane. This is because in order to induce a plasma having a uniform distribution as a whole, the insulating tube 141a of the high-frequency coil 141 is arranged densely as it approaches the ground plane rather than the power supply part. to be.

On the other hand, the exhaust unit 150 is provided at one side of the chamber 1 as means for exhausting the reaction gas in the chamber 1). That is, the second side wall 100b, which is the opposite side wall of the first side wall 100a, is provided to discharge the processed reaction gas in the reaction space to the outside.

 The exhaust unit 150 includes a baffle plate 151 formed on an inner surface of the second sidewall 100b facing the reaction space and a baffle plate 151 having a baffle plate 151, A dust collector 152 having an exhaust passage and an exhaust pipe 153 provided on an outer surface of the second side wall 100b and connected to the exhaust passage. The baffle plate 151 is a plate having a plurality of grid holes, and serves as a gas distribution plate. Therefore, the reaction gas in the reaction space can evenly pass through the plurality of grid holes formed in the baffle plate 151 and can be transferred to the exhaust passage of the dust collector 152.

By providing the baffle plate 151 in contact with the exhaust passage, the reaction gas in the reaction space can be sucked into the exhaust passage through the baffle plate 151 and discharged to the outside. Therefore, even distribution of the plasmaized reaction gas can be induced in the reaction space in the chamber 1, so that uniform photoresist peeling can be performed.

Particularly, the baffle plate has a structure that allows the exhaust gas to flow toward the outside or toward the opposite side with respect to the exhaust pipe. For this purpose, the baffle hole becomes longer as it goes from the center to the edge, as shown in FIG.

When the substrate is loaded on the substrate supporting unit 120, the control unit (not shown) performs control to turn the substrate supporting unit 120 and to activate the reaction gas in the reaction space after the gate door 110 is closed do. Therefore, as shown in FIG. 9, the reaction gas flows in the first sidewall 100a of the chamber 1 to be plasma, flows into the gaps of the plurality of substrates W stacked on the substrate support, Can be discharged to the outside through the baffle plate 151 and the dust collecting body 152 formed on the second side wall 100b which is the opposite side of the first side wall 100a of the casing 1. By rotating the substrate placed on the substrate supporting portion 120, an even reaction process can be performed.

The embodiments of the present invention described above are selected and presented in order to facilitate the understanding of those skilled in the art from a variety of possible examples. The technical idea of the present invention is not necessarily limited to or limited to these embodiments Various changes, modifications, and other equivalent embodiments are possible without departing from the spirit of the present invention.

110: gate door 120: substrate support
130: reaction gas spraying part 140: plasma generating part
150:

Claims (10)

A chamber having a reaction space therein;
A substrate support for rotating a plurality of vertically stacked substrates in a reaction space;
A reaction gas reservoir provided on a first sidewall of the chamber and provided outside the chamber; and a reaction gas supply pipe for supplying a reaction gas into the reaction space in the chamber, A reactive gas spraying part for spraying a gas to be transferred to an upper surface of the substrate;
A high-frequency coil provided in a first side wall of the chamber, the high-frequency coil being provided in a first side wall of the chamber, an insulation tube provided in a wall of the first side wall to surround the high-frequency coil, A plasma generator for plasma-activating the reaction gas supplied through the reaction gas injection unit;
An exhaust part provided on a second side wall which is an opposite side wall of the first side wall of the chamber;
A gate door provided on a third sidewall connecting the first sidewall and the second sidewall of the chamber to open and close a passage through which the substrate is loaded or unloaded; And
A control unit that closes the gate door and rotates the substrate support unit when the substrate is loaded on the substrate support unit, and activates the reaction gas in the reaction space by plasma;
The photoresist stripping apparatus comprising:
The method according to claim 1,
The exhaust unit includes:
A baffle plate formed on the inner surface of the second sidewall facing the reaction space;
A dust collector having an exhaust passage through which the reaction gas passing through the baffle plate is collected and discharged to the outside; And
An exhaust pipe provided on an outer surface of the second sidewall and connected to the exhaust passage;
The photoresist stripping apparatus comprising:
delete The method according to claim 1,
Wherein the insulating tube comprises:
The distance between the lines in which the insulating tubes are arranged is set to be equal to the distance between the lines in which the insulating tubes are arranged or the distance from the power supply portion of the first sidewall to the edge becomes narrower Wherein the photoresist stripping device is arranged so that the photoresist stripping device is disposed on the substrate.
The method according to claim 1,
The plasma generator may include:
An insulating plate coupled to an outer surface of the first sidewall;
A high frequency coil attached to the outer surface of the insulating plate; And
A power supply unit for supplying power to the high frequency coil;
The photoresist stripping apparatus comprising:
The method of claim 5,
Wherein the high frequency coils are arranged in a plurality of lines in the vertical direction of the insulating plate and the spacing between the lines in which the high frequency coils are arranged is uniformly or densely arranged from the power supply portion of the insulating plate toward the ground plane. Resist stripping device.
The method according to claim 1 or 5,
The plasma generator may include:
A photoresist stripping apparatus for generating a plasma by any one of high-frequency inductively coupled plasma (ICP) and microwave plasma.
The method of claim 2,
Wherein the baffle plate comprises:
Wherein a plurality of grid holes are formed so that reaction gas in the reaction space passes through the lattice holes and is transferred to the exhaust passage of the dust collector.
A chamber having a reaction space therein;
A substrate support for rotating a plurality of vertically stacked substrates in a reaction space;
A reaction gas reservoir provided on a first sidewall of the chamber and provided outside the chamber; and a reaction gas supply pipe for supplying a reaction gas into the reaction space in the chamber, A reactive gas spraying part for spraying a gas to be transferred to an upper surface of the substrate;
A high-frequency coil provided in a first side wall of the chamber, the high-frequency coil being provided in a first side wall of the chamber, an insulation tube provided in a wall of the first side wall to surround the high-frequency coil, A plasma generator for plasma-activating the reaction gas supplied through the reaction gas injection unit;
An exhaust part provided on a second side wall which is an opposite side wall of the first side wall of the chamber;
A gate door provided on a third sidewall connecting the first sidewall and the second sidewall of the chamber to open and close a passage through which the substrate is loaded or unloaded; And
A control unit that closes the gate door and rotates the substrate support unit when the substrate is loaded on the substrate support unit, and activates the reaction gas in the reaction space by plasma;
/ RTI >
Wherein the plasma generating unit generates a plasma by using any one of high-frequency inductively coupled plasma (ICP) and microwave plasma to remove the photoresist from the substrate.
The method of claim 9,
The exhaust unit includes:
A baffle plate formed on the inner surface of the second sidewall facing the reaction space;
A dust collector having an exhaust passage through which the reaction gas passing through the baffle plate is collected and discharged to the outside; And
An exhaust pipe provided on an outer surface of the second sidewall and connected to the exhaust passage;
/ RTI >
Wherein the baffle plate forms a plurality of lattice holes, and the reaction gas in the reaction space passes through the lattice holes and is transferred to the exhaust passage of the dust collector.
KR1020160090282A 2016-07-15 2016-07-15 Apparatus and Method for Photo-resist Ashing process KR101703499B1 (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN110408912A (en) * 2019-09-11 2019-11-05 光驰科技(上海)有限公司 A kind of multiple-piece rotating plasma enhancing atomic layer deposition film formation device

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JP2002191901A (en) * 2000-12-22 2002-07-10 Tokyo Electron Ltd Treatment apparatus and method for trapping impure substance
KR200375234Y1 (en) * 2004-11-11 2005-02-07 나노 아키텍트 리서치 코포레이션 Improved Structure of Downstream Plasma Reactor
KR20090107180A (en) * 2008-04-08 2009-10-13 (주)플러스텍 Gas phase vapor etcher for processing the wafer of the perpendicularly arranged large amount

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JP2002191901A (en) * 2000-12-22 2002-07-10 Tokyo Electron Ltd Treatment apparatus and method for trapping impure substance
KR200375234Y1 (en) * 2004-11-11 2005-02-07 나노 아키텍트 리서치 코포레이션 Improved Structure of Downstream Plasma Reactor
KR20090107180A (en) * 2008-04-08 2009-10-13 (주)플러스텍 Gas phase vapor etcher for processing the wafer of the perpendicularly arranged large amount

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110408912A (en) * 2019-09-11 2019-11-05 光驰科技(上海)有限公司 A kind of multiple-piece rotating plasma enhancing atomic layer deposition film formation device

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