TWI584085B - Photoresist removing apparatus and photoresist removing method using the same - Google Patents
Photoresist removing apparatus and photoresist removing method using the same Download PDFInfo
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- TWI584085B TWI584085B TW104125494A TW104125494A TWI584085B TW I584085 B TWI584085 B TW I584085B TW 104125494 A TW104125494 A TW 104125494A TW 104125494 A TW104125494 A TW 104125494A TW I584085 B TWI584085 B TW I584085B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
- G03F7/3064—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the transport means or means for confining the different units, e.g. to avoid the overflow
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本申請案主張2014年11月18日在韓國智慧財產局申請的韓國專利申請案第10-2014-0161179號的優先權權益，其全部內容以引用的方式併入本文中。 The present application claims priority to Korean Patent Application No. 10-2014-0161179, filed on Jan.
本發明是關於一種光阻移除裝置及一種使用所述光阻移除裝置的光阻移除方法。更具體而言，本發明是關於一種能夠防止由用於移除光阻的剝離劑的蒸發引起的損耗(此情形減小用於移除光阻的剝離劑的量)並維持用於移除光阻的剝離劑的剝離能力的光阻移除裝置；且是關於一種使用所述光阻移除裝置的光阻移除方法。 The present invention relates to a photoresist removal device and a photoresist removal method using the photoresist removal device. More particularly, the present invention relates to a loss capable of preventing evaporation caused by evaporation of a stripper for removing a photoresist (this situation reduces the amount of a stripper for removing a photoresist) and maintains for removal A photoresist removal device for the peeling ability of a photoresist stripper; and relates to a photoresist removal method using the photoresist removal device.
液晶顯示器件的微電路或半導體積體電路的製造製程包 括以下若干步驟：在基板上形成多種下部膜，諸如由鋁、鋁合金、銅、銅合金、鉬或鉬合金製成的導電金屬膜，或絕緣膜，諸如氧化矽膜、氮化矽膜或丙烯醯基絕緣膜；在此下部膜上均勻地塗佈光阻；視情況使所塗佈光阻曝光及顯影以形成光阻圖案；以及使用光阻圖案作為罩幕來圖案化下部膜。 Manufacturing process package for microcircuit or semiconductor integrated circuit of liquid crystal display device The following steps are included: forming a plurality of lower films on the substrate, such as a conductive metal film made of aluminum, aluminum alloy, copper, copper alloy, molybdenum or molybdenum alloy, or an insulating film such as hafnium oxide film, tantalum nitride film or An acryl-based insulating film; a photoresist is uniformly coated on the lower film; the coated photoresist is exposed and developed as appropriate to form a photoresist pattern; and the lower film is patterned using the photoresist pattern as a mask.
在這些圖案化步驟之後，進行移除下部膜上剩餘之光阻的製程。為此目的，使用用於移除光阻的剝離劑。 After these patterning steps, a process of removing the remaining photoresist on the lower film is performed. For this purpose, a stripper for removing the photoresist is used.
一般而言，歸因於在使用用於移除光阻的剝離劑來移除形成於基板上的光阻的製程期間的溫度條件及其類似者，光阻經蒸發並產生煙霧，且因此存在如下問題：用於移除光阻的剝離劑的量經減小，且因此用於移除光阻必要的剝離劑的總量增加。 In general, due to the temperature conditions during the process of removing the photoresist formed on the substrate using a stripper for removing the photoresist and the like, the photoresist is evaporated and generates smoke, and thus exists The problem is that the amount of the stripper for removing the photoresist is reduced, and thus the total amount of the stripper necessary for removing the photoresist is increased.
詳言之，在用於移除水性光阻的剝離劑的狀況下，存在水的蒸發量大的限制，因此減小了剝離劑的剝離能力。 In particular, in the case of a stripper for removing an aqueous photoresist, there is a limitation that the amount of evaporation of water is large, thus reducing the peeling ability of the release agent.
因此，需要開發一種能夠防止用於移除光阻的剝離劑由蒸發引起的損耗(此情形減小用於移除光阻的剝離劑的量)並維持用於移除光阻的剝離劑的剝離能力的光阻移除裝置；及一種使用所述光阻移除裝置的光阻移除方法。 Therefore, there is a need to develop a loss of evaporation of a release agent for removing a photoresist (in this case, reducing the amount of a release agent for removing a photoresist) and maintaining a release agent for removing a photoresist. a peeling ability photoresist removing device; and a photoresist removing method using the photoresist removing device.
本發明的目標為提供一種光阻移除裝置，其能夠防止用於移除光阻的剝離劑由蒸發引起的損耗，此情形減小用於移除光阻的剝離劑的量；且能夠維持用於移除光阻的剝離劑的剝離能力。 It is an object of the present invention to provide a photoresist removal apparatus capable of preventing loss of evaporation of a release agent for removing a photoresist by evaporation, which reduces the amount of a release agent for removing a photoresist; and can maintain The peeling ability of the stripper used to remove the photoresist.
本發明的另一目標為提供一種使用上述光阻移除裝置的光阻移除方法。 Another object of the present invention is to provide a photoresist removal method using the above-described photoresist removal device.
在本發明中，提供一種光阻移除裝置，其包含：剝離腔室，所述剝離腔室包含用於移除光阻的剝離劑儲存槽、用於移動光阻形成於表面上的基板的基板移動器件、用於將用於移除光阻的剝離劑噴灑於基板移動器件上的剝離劑噴灑器，及用於將用於移除光阻的剝離劑自儲存槽轉移至剝離劑噴灑器的剝離劑轉移器件；冷卻器件，其位於剝離腔室的頂部處且冷卻在剝離腔室中蒸發的材料；以及輸送器件，其用於輸送在冷卻器件中冷卻的材料至剝離劑儲存槽或用於移除光阻的剝離腔室。 In the present invention, there is provided a photoresist removing apparatus comprising: a peeling chamber including a stripper storage tank for removing a photoresist, and a substrate for moving a photoresist formed on the surface a substrate moving device, a stripper sprayer for spraying a stripper for removing the photoresist onto the substrate moving device, and a transfer agent for removing the photoresist from the storage tank to the stripper sprayer a stripper transfer device; a cooling device located at the top of the stripping chamber and cooling the material evaporated in the stripping chamber; and a transport device for transporting the material cooled in the cooling device to the stripper reservoir or The stripping chamber for removing the photoresist.
在本發明中，提供一種使用上述光阻移除裝置的光阻移除方法。 In the present invention, a photoresist removal method using the above-described photoresist removal device is provided.
下文中，將詳細地描述根據本發明的特定實施例的光阻移除裝置及光阻移除方法。 Hereinafter, a photoresist removal device and a photoresist removal method according to a specific embodiment of the present invention will be described in detail.
1‧‧‧剝離腔室 1‧‧‧ peeling chamber
2‧‧‧剝離劑噴灑器 2‧‧‧Release sprayer
3‧‧‧基板移動器件 3‧‧‧Substrate mobile device
4‧‧‧用於移除光阻的剝離劑儲存槽 4‧‧‧Release storage tank for removing photoresist
5‧‧‧泵 5‧‧‧ pump
6‧‧‧轉移管線 6‧‧‧Transfer line
7‧‧‧冷卻器件 7‧‧‧ Cooling device
8‧‧‧第一流動速率控制閥 8‧‧‧First flow rate control valve
9‧‧‧輸送器件 9‧‧‧Transport device
10‧‧‧輸送器件 10‧‧‧Transport device
11‧‧‧第二流動速率控制閥 11‧‧‧Second flow rate control valve
12‧‧‧***器件 12‧‧‧Excretion device
13‧‧‧第四管道 13‧‧‧ fourth pipeline
14‧‧‧廢液槽 14‧‧‧ Waste tank
15‧‧‧管道 15‧‧‧ Pipes
16‧‧‧剝離劑轉移器件 16‧‧‧Release transfer device
17‧‧‧過濾器件 17‧‧‧Filter device
圖1為說明用於實例中的光阻移除裝置的結構的示意圖。 FIG. 1 is a schematic view illustrating the structure of a photoresist removing device used in the example.
圖2為說明用於比較性實例中的光阻移除裝置的結構的示意圖。 2 is a schematic view illustrating the structure of a photoresist removing device used in a comparative example.
根據本發明的一個實施例，提供一種光阻移除裝置，其包含：剝離腔室1，其包含用於移除光阻的剝離劑儲存槽4、用於移動光阻形成於表面上的基板的基板移動器件3、用於將用於移除光阻的剝離劑噴灑至基板移動器件上的剝離劑噴灑器2以及用於將用於移除光阻的剝離劑自儲存槽轉移至剝離劑噴灑器的剝離劑轉移器件16；冷卻器件7，其用於冷卻在剝離腔室中蒸發的材料；轉移管線6，其用於將在剝離腔室中蒸發的材料轉移至冷卻器件；以及輸送器件，其用於將在冷卻器件中冷卻的材料輸送至剝離劑儲存槽或用於移除光阻的剝離腔室。 According to an embodiment of the present invention, there is provided a photoresist removing apparatus comprising: a peeling chamber 1 including a stripper storage tank 4 for removing a photoresist, and a substrate for moving a photoresist formed on a surface a substrate moving device 3, a stripper sprayer 2 for spraying a stripper for removing photoresist onto the substrate moving device, and a stripping agent for removing the photoresist from the storage tank to the stripper a stripper transfer device 16 of the sprinkler; a cooling device 7 for cooling the material evaporated in the stripping chamber; a transfer line 6 for transferring the material evaporated in the stripping chamber to the cooling device; and a transport device It is used to deliver the material cooled in the cooling device to a stripper reservoir or a stripping chamber for removing the photoresist.
本發明人經由大量實驗發現，當使用上述特定光阻移除裝置時，由於在剝離製程中產生的蒸發材料經冷卻，且接著與用於移除光阻的剝離劑再次混合，因此有可能防止用於移除光阻的剝離劑由蒸發引起的損耗，且因此減小移除光阻必要的剝離劑的量。已基於此發現完成本發明。 The inventors have found through extensive experiments that when the above specific photoresist removing device is used, since the evaporation material generated in the peeling process is cooled and then remixed with the stripping agent for removing the photoresist, it is possible to prevent The release agent used to remove the photoresist is depleted by evaporation, and thus reduces the amount of stripper necessary to remove the photoresist. The present invention has been completed based on this finding.
詳言之，光阻移除裝置可包含輸送器件，其用於將在冷卻器件中冷卻的材料輸送至剝離劑儲存槽或用於移除光阻的剝離腔室。 In particular, the photoresist removal device can include a transport device for transporting material cooled in the cooling device to a stripper reservoir or a stripping chamber for removing the photoresist.
因此，光阻移除裝置可防止用於移除光阻的剝離劑由蒸發引起的損耗，其減小用於移除光阻的剝離劑的量。輸送器件的特定實例不特別受限，且可無限制地使用具有多種形狀、長度、直徑及其類似者的管道。 Therefore, the photoresist removal device can prevent the loss of the release agent for removing the photoresist from evaporation, which reduces the amount of the release agent for removing the photoresist. The specific example of the conveying device is not particularly limited, and a pipe having various shapes, lengths, diameters, and the like can be used without limitation.
以上光阻移除裝置可包含用於將在冷卻器件中冷卻的材料輸送至剝離劑儲存槽4的輸送器件9，或用於將在冷卻器件中冷卻的材料輸送至剝離腔室1的輸送器件10。 The above photoresist removing device may include a conveying device 9 for conveying the material cooled in the cooling device to the stripper storage tank 4, or a conveying device for conveying the material cooled in the cooling device to the stripping chamber 1. 10.
用於輸送至用於移除光阻的剝離劑儲存槽4的輸送器件9及用於將在冷卻器件中冷卻的材料輸送至剝離腔室1的輸送器件10分別連接至分離冷卻器件，或可藉由一個管道組合地連接至冷卻器件。 The conveying device 9 for conveying to the stripper storage tank 4 for removing the photoresist and the conveying device 10 for conveying the material cooled in the cooling device to the stripping chamber 1 are respectively connected to the separating cooling device, or may be It is connected to the cooling device in combination by a pipe.
此外，用於輸送在冷卻器件中冷卻的材料至用於移除光阻的剝離劑儲存槽的輸送器件9可在用於移除光阻的剝離劑儲存槽4的高度的大於50%或55%至100%或者60%至95%的位置處連接。 Further, the conveying means 9 for conveying the material cooled in the cooling device to the stripper storage tank for removing the photoresist may be greater than 50% or 55 of the height of the stripper storage tank 4 for removing the photoresist. % to 100% or 60% to 95% of the connections.
若用於輸送在冷卻器件中冷卻的材料至用於移除光阻的剝離劑儲存槽的輸送器件9連接至用於移除光阻的剝離劑儲存槽4所在的位置低於用於移除光阻的剝離劑儲存槽4的高度的50%以下，則包含於用於移除光阻的剝離劑儲存槽4中的剝離劑可流回至用於輸送在冷卻器件中冷卻的材料至用於移除光阻的剝離劑儲存槽的輸送器件9。 If the conveying means 9 for conveying the material cooled in the cooling device to the stripper storage tank for removing the photoresist is connected to the stripper storage tank 4 for removing the photoresist, the position is lower than for removal If the photoresist is less than 50% of the height of the stripper storage tank 4, the stripper contained in the stripper storage tank 4 for removing the photoresist may flow back to the material for transporting the cooling in the cooling device. The transport device 9 for removing the photoresist stripper reservoir.
用於輸送在冷卻器件中冷卻的材料至剝離腔室的輸送器件10可在如下兩者之間的位置處連接：用於移除光阻的剝離劑儲存槽4的高度，及用於移動光阻形成於表面上的基板的基板移動器件3的高度。 The conveying device 10 for conveying the material cooled in the cooling device to the stripping chamber may be connected at a position between the two: the height of the stripper storage tank 4 for removing the photoresist, and for moving the light The substrate that blocks the substrate formed on the surface moves the height of the device 3.
因此，由於用於將在冷卻器件中冷卻的材料輸送至剝離腔室的輸送器件10可連接於用於移除光阻的剝離劑儲存槽的高度與用於移動光阻形成於表面上的基板的基板移動器件的高度之間的位置處，因此自冷卻器件排出的材料可移動至用於移除光阻的剝離劑儲存槽而不會因為基板轉移管線影響基板移動。 Therefore, since the conveying means 10 for conveying the material cooled in the cooling device to the peeling chamber can be connected to the height of the stripper storage tank for removing the photoresist and the substrate for moving the photoresist formed on the surface The substrate moves at a position between the heights of the device, so that the material discharged from the cooling device can be moved to the stripper storage tank for removing the photoresist without affecting substrate movement due to the substrate transfer line.
光阻移除裝置可包含閥8，其可調整輸送器件的開啟及關 斷，所述輸送器件用於將在冷卻器件中冷卻的材料輸送至剝離劑儲存槽或用於移除光阻的剝離腔室。術語「開啟及關斷」指使用閥8開啟並關斷輸送器件。 The photoresist removal device can include a valve 8 that can adjust the opening and closing of the delivery device The delivery device is adapted to deliver material cooled in the cooling device to a stripper reservoir or a stripping chamber for removing the photoresist. The term "on and off" refers to the use of valve 8 to open and shut off the delivery device.
當輸送器件開啟時，在冷卻器件中冷卻的材料可經輸送至剝離劑儲存槽或用於移除光阻的剝離腔室。當關斷輸送器件時，在冷卻器件中冷卻的材料可經輸送至隨後描述的廢液槽14而非剝離劑儲存槽或用於移除光阻的剝離腔室。 When the delivery device is turned on, the material cooled in the cooling device can be delivered to a stripper reservoir or a stripping chamber for removing the photoresist. When the delivery device is turned off, the material cooled in the cooling device can be delivered to the waste tank 14 described later instead of the stripper storage tank or the stripping chamber for removing the photoresist.
另外，光阻移除裝置可包含：剝離腔室1，其包含用於移除光阻的剝離劑儲存槽4；基板移動器件3，其用於移動光阻形成於表面上的基板；剝離劑噴灑器2，其用於將用於移除光阻的剝離劑噴灑至基板移動器件上；以及剝離劑轉移器件16，其用於將用於光阻移除的剝離劑自儲存槽轉移至剝離劑噴灑器。 In addition, the photoresist removing device may include: a peeling chamber 1 including a stripper storage tank 4 for removing the photoresist; a substrate moving device 3 for moving the substrate on which the photoresist is formed on the surface; a stripping agent a sprinkler 2 for spraying a stripper for removing photoresist onto the substrate moving device; and a stripper transfer device 16 for transferring the stripper for photoresist removal from the storage tank to the stripping Sprayer.
包含於用於移除光阻的剝離劑儲存槽4中的用於移除光阻的剝離劑並不受限於特定類型，且可無限制地使用具有作為用於移除光阻的剝離劑的功能的任一組合物。 The release agent for removing the photoresist included in the release agent storage tank 4 for removing the photoresist is not limited to a specific type, and can be used without limitation as having a release agent for removing the photoresist Any combination of features.
舉例而言，可使用38wt%的蒸餾水、10wt%的(1-腔基)-異丙醇(AIP)、10wt%的N-甲基甲醯胺(NMF)、41.9wt%的二乙二醇單丁醚(BDG)及0.1wt%的2,2'[[(甲基-1H-苯并***-1-基)甲基]亞胺基]雙乙醇的混合物。 For example, 38 wt% distilled water, 10 wt% (1-cavity)-isopropanol (AIP), 10 wt% N-methylformamide (NMF), 41.9 wt% diethylene glycol can be used. A mixture of monobutyl ether (BDG) and 0.1% by weight of 2,2'[[(methyl-1H-benzotriazol-1-yl)methyl]imino]diethanol.
用於移動光阻形成於表面上的基板的基板移動器件3的實例並不特別受限。舉例而言，可使用帶式輸送器及其類似者。基板移動器件可在平行於水平面的方向上位於剝離腔室1的內部。 An example of the substrate moving device 3 for moving the substrate on which the photoresist is formed on the surface is not particularly limited. For example, belt conveyors and the like can be used. The substrate moving device may be located inside the peeling chamber 1 in a direction parallel to the horizontal plane.
在用於移動光阻形成於表面上的基板的方法的實例中，光阻形成於表面上的基板置放於基板移動器件3上，從而允許在 平行於水平面的方向上沿著基板移動器件3移動基板。 In an example of a method for moving a substrate on which a photoresist is formed on a surface, a substrate on which a photoresist is formed on a surface is placed on the substrate moving device 3, thereby allowing The substrate is moved along the substrate moving device 3 in a direction parallel to the horizontal plane.
用於將用於移除光阻的剝離劑噴灑至基板移動器件上的剝離劑噴灑器2的實例並不特別受限，而可使用例如是具有80個孔的噴嘴，具體言之，家用噴嘴、針形噴嘴、節流針形噴嘴、扁平針形噴嘴及其類似者。 An example of the stripper sprayer 2 for spraying the stripper for removing the photoresist onto the substrate moving device is not particularly limited, and for example, a nozzle having 80 holes, in particular, a household nozzle, may be used. , needle nozzles, throttle needle nozzles, flat needle nozzles and the like.
用於噴灑用於移除光阻的剝離劑的方法的實例可包含在0.01MPa至0.9MPa的壓力下在30℃至50℃的溫度下經由剝離劑噴灑器2噴灑用於移除光阻的剝離劑的方法。 An example of a method for spraying a stripper for removing a photoresist may include spraying a photoresist for removing a photoresist via a stripper sprayer 2 at a temperature of 30 ° C to 50 ° C under a pressure of 0.01 MPa to 0.9 MPa. The method of stripping agent.
具體言之，用於移動光阻形成於表面上的基板的基板移動器件3位於用於移除光阻的剝離劑儲存槽4的頂部處，且用於將用於移除光阻的剝離劑噴灑至基板移動器件上的剝離劑噴灑器2可位於基板移動器件的頂部處。術語「頂部」指基於水平面的較高位置。 Specifically, the substrate moving device 3 for moving the substrate on which the photoresist is formed on the surface is located at the top of the stripper storage tank 4 for removing the photoresist, and is used for a stripper for removing the photoresist The stripper sprayer 2 sprayed onto the substrate moving device can be located at the top of the substrate moving device. The term "top" refers to a higher position based on the horizontal plane.
因此，用於移除光阻的剝離劑自用於噴灑剝離劑的剝離劑噴灑器2噴灑至位於最高點處的基板移動器件的頂部，且經噴灑的剝離劑可接觸光阻形成於表面上的基板。 Therefore, the stripper for removing the photoresist is sprayed from the stripper sprayer 2 for spraying the stripper to the top of the substrate moving device at the highest point, and the sprayed stripper can contact the photoresist to be formed on the surface. Substrate.
另外，與光阻形成於表面上的基板接觸的用於移除光阻的剝離劑可移動至用於移除光阻的剝離劑儲存槽4中。 In addition, the release agent for removing the photoresist in contact with the substrate on which the photoresist is formed on the surface may be moved into the release agent storage tank 4 for removing the photoresist.
具體言之，***器件12可更包含於基板移動器件3與用於移除光阻的剝離劑儲存槽4之間。 Specifically, the draining device 12 may be further included between the substrate moving device 3 and the stripper storage tank 4 for removing the photoresist.
歸因於包含***器件12，可收集噴灑於基板上用於移除光阻的剝離劑，且接著將其引入至用於移除光阻的剝離劑儲存槽4中。 Due to the inclusion of the drainage device 12, a release agent sprayed on the substrate for removing the photoresist can be collected and then introduced into the release agent storage tank 4 for removing the photoresist.
剝離腔室1可包含剝離劑轉移器件16，其用於將用於移 除光阻的剝離劑自儲存槽轉移至剝離劑噴灑器。剝離劑轉移器件16的實例並不特別受限，且可不限制地使用具有多種形狀、長度、直徑及其類似者的管道。 The stripping chamber 1 can include a stripper transfer device 16 for use in moving The stripper other than the photoresist is transferred from the storage tank to the stripper sprayer. The example of the release agent transfer device 16 is not particularly limited, and a pipe having various shapes, lengths, diameters, and the like can be used without limitation.
用於自所述儲存槽轉移用於移除光阻的剝離劑至所述剝離劑噴灑器的剝離劑轉移器件16可更包含過濾器件17。 The stripper transfer device 16 for transferring the stripper for removing the photoresist from the storage tank to the stripper sprayer may further comprise a filter device 17.
歸因於包含過濾器件17，可藉由移除外來材料來維持用於移除光阻的剝離劑的品質及效能，所述外來材料可包含於在用於移除光阻的剝離劑儲存槽4中包含的用於移除光阻的剝離劑中。過濾器件17的實例並不特別受限，而是(例如)可使用過濾器。 Due to the inclusion of the filter device 17, the quality and efficacy of the stripper for removing the photoresist can be maintained by removing the foreign material, which can be included in the stripper reservoir for removing the photoresist 4 in the stripper used to remove the photoresist. An example of the filter device 17 is not particularly limited, but, for example, a filter can be used.
過濾器的材料亦不特別受限，且可使用諸如聚乙烯或聚丙烯的聚合物樹脂或諸如聚偏二氟乙烯的鐵氟龍基樹脂。包含於過濾器中的孔的直徑可為0.1μm至300μm。過濾器的大小並不特別受限，且可使用具有各種大小的過濾器。 The material of the filter is also not particularly limited, and a polymer resin such as polyethylene or polypropylene or a Teflon-based resin such as polyvinylidene fluoride can be used. The pores contained in the filter may have a diameter of from 0.1 μm to 300 μm. The size of the filter is not particularly limited, and filters having various sizes can be used.
另外，用於自儲存槽轉移用於移除光阻的剝離劑至剝離劑噴灑器的剝離劑轉移器件16可包含泵5。 Additionally, the stripper transfer device 16 for transferring the stripper for removing the photoresist from the storage tank to the stripper sprayer can include the pump 5.
如上文所描述，由於用於將用於移除光阻的剝離劑噴灑於基板轉移管線的頂部上的剝離劑噴灑器2位於比用於移除光阻的剝離劑儲存槽4高的部分處，因此用於將用於移除光阻的剝離劑轉移至剝離劑噴灑器以便自用於移除光阻的剝離劑儲存槽4轉移至剝離劑噴灑器2的剝離劑轉移器件16可更包含泵5，所述剝離劑噴灑器2用於將用於移除光阻的剝離劑噴灑於基板轉移管線的頂部上。 As described above, since the stripper sprayer 2 for spraying the stripper for removing the photoresist onto the top of the substrate transfer line is located at a portion higher than the stripper storage tank 4 for removing the photoresist Therefore, the stripper for transferring the photoresist is transferred to the stripper sprayer so that the stripper transfer device 16 transferred from the stripper reservoir 4 for removing the photoresist to the stripper sprayer 2 may further comprise a pump 5. The stripper sprayer 2 is for spraying a stripper for removing the photoresist onto the top of the substrate transfer line.
具體言之，在以上儲存槽中，用於將用於移除光阻的剝離劑轉移至剝離劑噴灑器的剝離劑轉移器件16可連接至用於噴灑用 於移除光阻的剝離劑的剝離劑噴灑器2及用於移除光阻的剝離劑儲存槽4。 Specifically, in the above storage tank, the stripper transfer device 16 for transferring the stripper for removing the photoresist to the stripper sprayer can be connected for use in spraying A stripper sprayer 2 for removing the photoresist of the photoresist and a stripper storage tank 4 for removing the photoresist.
另外，光阻移除裝置可包含冷卻器件7，其位於剝離腔室的頂部處且冷卻剝離腔室中蒸發的材料。 Additionally, the photoresist removal device can include a cooling device 7 located at the top of the stripping chamber and cooling the material evaporating in the stripping chamber.
冷卻器件7可經由冷卻使在光阻移除製程期間由蒸發損耗的材料液化，此情形減小對於移除光阻必要的剝離劑的量。 The cooling device 7 can liquefy the material lost by evaporation during the photoresist removal process via cooling, which reduces the amount of stripper necessary to remove the photoresist.
冷卻器件7可例如包含冷凝器及其類似者。在冷卻器件中，冷凝可在-10℃至50℃、-8℃至30℃或-5℃至10℃的溫度下由致冷劑進行。 The cooling device 7 can for example comprise a condenser and the like. In the cooling device, the condensation can be carried out by a refrigerant at a temperature of -10 ° C to 50 ° C, -8 ° C to 30 ° C or -5 ° C to 10 ° C.
致冷劑為致冷循環中的工作流體，且指自低溫對象獲取熱並將熱轉移至高溫對象的媒體，且可無限制地使用廣泛地用於此領域中的多種致冷劑。 The refrigerant is a working fluid in a refrigeration cycle, and refers to a medium that takes heat from a low temperature object and transfers the heat to a high temperature object, and can use various refrigerants widely used in this field without limitation.
冷卻器件7可位於剝離腔室的頂部上。術語「頂部」指基於水平面在較高位置處的位置。即，冷卻器件7的高度可高於剝離腔室1的高度。 The cooling device 7 can be located on top of the stripping chamber. The term "top" refers to a position based on a horizontal plane at a higher position. That is, the height of the cooling device 7 may be higher than the height of the peeling chamber 1.
在剝離腔室1中進行剝離製程的過程中，包含於用於移除光阻的剝離劑中的一部分組分可歸因於剝離腔室1的內部溫度而蒸發。 During the peeling process in the peeling chamber 1, a part of the components contained in the stripping agent for removing the photoresist may be evaporated due to the internal temperature of the peeling chamber 1.
同時，為了防止剝離劑歸因於經蒸發組分的損耗，收集經蒸發的組分。為了經由冷卻器件來液化並恢復所收集的組分，冷卻器件可位於比剝離腔室高的點處。 At the same time, in order to prevent the stripper from being lost due to the evaporation component, the evaporated component is collected. In order to liquefy and recover the collected components via the cooling device, the cooling device can be located at a higher point than the stripping chamber.
此外，本發明的裝置可更包含用於儲存廢棄的用於移除光阻的剝離劑的廢液槽14。 Further, the apparatus of the present invention may further comprise a waste liquid tank 14 for storing the discarded stripper for removing the photoresist.
廢棄的用於移除光阻的剝離劑可包含：在用於移除光阻 的剝離劑於剝離製程期間產生的外來材料；歸因於歷時長時間儲存於用於移除光阻的剝離劑儲存槽4中而改變性質的用於移除光阻的剝離劑；在過濾器件17中過濾的外來材料；及其類似者。 The stripping agent used to remove the photoresist may include: used to remove the photoresist The release agent is a foreign material generated during the stripping process; the stripper for removing the photoresist is changed due to the long-term storage in the stripper storage tank 4 for removing the photoresist; in the filter device Foreign materials filtered in 17; and the like.
廢液槽14的位置並不特別受限，且其較佳地可位於剝離腔室1的底部處。 The position of the waste liquid tank 14 is not particularly limited, and it may preferably be located at the bottom of the peeling chamber 1.
廢棄的用於移除光阻的剝離劑可直接自剝離腔室1轉移，或冷卻器件7處冷卻的材料可被轉移至廢液槽14。 The discarded stripper for removing the photoresist can be transferred directly from the stripping chamber 1, or the material cooled at the cooling device 7 can be transferred to the waste tank 14.
在廢棄的用於移除光阻的剝離劑直接自剝離腔室1轉移的狀況下，轉移可經由管道13進行。 In the case where the discarded stripping agent for removing the photoresist is directly transferred from the stripping chamber 1, the transfer can be performed via the pipe 13.
另外，在冷卻器件中冷卻的材料經轉移至廢液槽的狀況下，所述材料可經由包含閥11的管道15轉移，所述閥可調整管道15的開啟及關斷。 In addition, in the case where the material cooled in the cooling device is transferred to the waste tank, the material can be transferred via the pipe 15 containing the valve 11, which can adjust the opening and closing of the pipe 15.
另一方面，根據本發明的其他實施例，可提供使用光阻移除裝置的光阻移除方法。 On the other hand, according to other embodiments of the present invention, a photoresist removal method using a photoresist removal device can be provided.
具體言之，光阻移除方法可包含：將用於移除光阻的剝離劑噴灑至光阻形成於表面上的基板上的步驟；收集在噴灑期間產生的氣體且接著藉由冷卻器件冷卻所述氣體的步驟；以及自用於移除光阻的剝離劑儲存槽恢復經噴灑用於移除光阻的剝離劑及經冷卻材料的步驟。 Specifically, the photoresist removal method may include: spraying a stripper for removing the photoresist onto the substrate on which the photoresist is formed on the surface; collecting the gas generated during the spraying and then cooling by the cooling device a step of the gas; and a step of recovering the stripper and the cooled material sprayed for removing the photoresist from the stripper storage tank for removing the photoresist.
光阻移除方法可包含將用於移除光阻的剝離劑噴灑於光阻形成於表面上的基板上的步驟。 The photoresist removal method may include the step of spraying a stripper for removing the photoresist on the substrate on which the photoresist is formed on the surface.
噴灑方法的實例並不特別受限，且例如可使用如下方法：例如使用家用噴嘴、針形噴嘴、節流針形噴嘴、扁平針形噴嘴及其類似者在0.01MPa至0.9MPa的壓力下在30℃至50℃的溫度下 噴灑用於移除光阻的剝離劑。 Examples of the spraying method are not particularly limited, and for example, a method of using a household nozzle, a needle nozzle, a throttle needle nozzle, a flat needle nozzle, and the like at a pressure of 0.01 MPa to 0.9 MPa can be used, for example. 30 ° C to 50 ° C temperature A stripper for removing the photoresist is sprayed.
在將用於移除光阻的剝離劑噴灑於光阻形成於表面上的基板上的步驟中，用於移除光阻的剝離劑的溫度可為自40℃至60℃。 In the step of spraying the stripper for removing the photoresist on the substrate on which the photoresist is formed on the surface, the temperature of the stripper for removing the photoresist may be from 40 ° C to 60 ° C.
當用於移除光阻的剝離劑的溫度低於40℃時，剝離能力可能被減低。當用於移除光阻的剝離劑的溫度大於60℃時，存在可燃性的風險，且因此可使用性可能被減小。 When the temperature of the stripper for removing the photoresist is lower than 40 ° C, the peeling ability may be lowered. When the temperature of the stripper for removing the photoresist is greater than 60 ° C, there is a risk of flammability, and thus workability may be reduced.
用於移除光阻的剝離劑的特定類型並不特別受限，且可不限制地使用具有用於移除光阻功能的剝離劑的任何類型組合物。 The specific type of the release agent for removing the photoresist is not particularly limited, and any type of composition having a release agent for removing the photoresist function may be used without limitation.
在將用於移除光阻的剝離劑噴灑於光阻形成於表面上的基板上的步驟之前，可更包含在過濾器件中對用於移除光阻的剝離劑進行過濾的步驟。 Before the step of spraying the stripper for removing the photoresist onto the substrate on which the photoresist is formed on the surface, the step of filtering the stripper for removing the photoresist in the filter device may be further included.
因此，可藉由移除外來材料來維持用於移除光阻的經噴灑剝離劑的品質及效能，所述外來材料可包含於在用於移除光阻的剝離劑儲存槽4中包含的用於移除光阻的剝離劑中。 Therefore, the quality and efficacy of the spray stripper for removing the photoresist can be maintained by removing the foreign material, which may be included in the stripper storage tank 4 for removing the photoresist. Used in the stripper to remove the photoresist.
過濾步驟的實例並不特別受限。舉例而言，過濾可經由包含於剝離劑轉移器件16中的過濾器件17執行，所述剝離劑轉移器件16用於將用於移除光阻的剝離劑自儲存槽轉移至剝離劑噴灑器。過濾器件17的描述包含於實施例的詳細描述中。 Examples of the filtering step are not particularly limited. For example, filtration can be performed via a filter device 17 included in a stripper transfer device 16 for transferring a stripper for removing photoresist from a storage tank to a stripper sprayer. The description of the filter device 17 is included in the detailed description of the embodiment.
另外，光阻移除方法可包含收集並冷卻在噴灑同時產生的氣體的步驟。 Additionally, the photoresist removal method can include the step of collecting and cooling the gas generated while spraying.
如上文所描述，若用於移除光阻的剝離劑的溫度為自40℃至60℃，則包含於用於移除光阻的剝離劑中的一部分組分可經氣化。 As described above, if the temperature of the release agent for removing the photoresist is from 40 ° C to 60 ° C, a part of the components contained in the release agent for removing the photoresist may be vaporized.
光阻移除方法可包含收集並冷卻在噴灑期間產生的氣體 的步驟，因此使歸因於剝離製程中蒸發損耗的用於移除光阻的剝離劑的量最小化。 The photoresist removal method can include collecting and cooling the gas generated during the spraying The step, thus minimizing the amount of stripper used to remove the photoresist due to evaporation losses in the stripping process.
具體言之，於收集在噴灑期間產生的氣體且接著用冷卻器件冷卻所收集氣體的步驟中，在噴灑期間產生的氣體的收集可藉由以下的操作方法來進行：經由管道(轉移管線6)連接根據一個實施例的剝離器件中的剝離腔室1與位於剝離腔室的頂部處的冷卻器件7來轉移氣體。 Specifically, in the step of collecting the gas generated during the spraying and then cooling the collected gas with the cooling device, the collection of the gas generated during the spraying can be performed by the following operation method: via the pipe (transfer line 6) The gas is transferred by joining the stripping chamber 1 in the stripping device according to one embodiment with the cooling device 7 at the top of the stripping chamber.
此外，可使用一個實施例的冷卻器件7藉由冷凝方法在-10℃至50℃、-8℃至30℃或-5℃至10℃的溫度下執行冷卻。冷卻器件7的描述包含於以上實施例的詳細描述中。 Further, cooling may be performed at a temperature of -10 ° C to 50 ° C, -8 ° C to 30 ° C or -5 ° C to 10 ° C by a condensation method using the cooling device 7 of one embodiment. The description of the cooling device 7 is included in the detailed description of the above embodiment.
又，其可包含藉由用於移除光阻的剝離劑儲存槽恢復用於移除光阻的經噴灑剝離劑及經冷卻材料的步驟。 Also, it may include the step of recovering the spray stripper and the cooled material for removing the photoresist by a stripper reservoir for removing the photoresist.
因此，用於移除光阻的剝離劑的歸因於剝離製程中的蒸發損耗的量可經最小化，且因此用於移除光阻必要的剝離劑的量可減小，且用於移除光阻的剝離劑的剝離能力可得以維持。 Therefore, the amount of the peeling agent used for removing the photoresist due to the evaporation loss in the peeling process can be minimized, and thus the amount of the stripping agent necessary for removing the photoresist can be reduced, and used for shifting The peeling ability of the stripper other than the photoresist can be maintained.
經冷卻材料的實例並不特別受限。舉例而言，可包含水或有機化合物。 Examples of the cooled material are not particularly limited. For example, water or an organic compound can be included.
有機化合物的實例並不特別受限。舉例而言，可使用包含於用於移除光阻的剝離劑中的所有組分，諸如胺、醯胺、伸烷基二醇單烷基醚及其類似者。 Examples of the organic compound are not particularly limited. For example, all of the components included in the release agent for removing the photoresist, such as an amine, a guanamine, an alkylene glycol monoalkyl ether, and the like can be used.
藉由用於移除光阻的剝離劑儲存槽恢復經噴灑的用於移除光阻的剝離劑的方法的實例並不特別受限。舉例而言，此情形可藉由如下方法來進行：使用位於實施例的裝置的基板移動器件3的底部處的***器件12將剝離劑轉移至用於移除光阻的剝離劑儲存 槽4。 An example of a method of restoring a sprayed release agent for removing a photoresist by a stripper storage tank for removing a photoresist is not particularly limited. For example, this can be done by transferring the release agent to the stripper for removing the photoresist using the drain device 12 at the bottom of the substrate moving device 3 of the device of the embodiment. Slot 4.
用於恢復經冷卻材料的方法的實例並不特別受限。舉例而言，根據實施例，此情形可藉由如下方法來進行：冷卻器件7及剝離腔室1或用於移除光阻的剝離劑儲存槽4經由管道(輸送器件9)連接，且開啟閥8。 Examples of the method for recovering the cooled material are not particularly limited. For example, according to an embodiment, this situation can be performed by the following method: the cooling device 7 and the stripping chamber 1 or the stripper storage tank 4 for removing the photoresist are connected via a pipe (conveying device 9), and are turned on. Valve 8.
在自剝離劑儲存槽恢復經噴灑的用於移除光阻的剝離劑及經冷卻材料的步驟之後，可更包含允許包含於儲存槽中的用於移除光阻的剝離劑處理另一基板的回收步驟。 After recovering the sprayed stripper and the cooled material for removing the photoresist from the stripper storage tank, the stripping agent for removing the photoresist included in the storage tank may be further included to process another substrate Recycling steps.
若包含回收步驟，則用於移除光阻的剝離劑的某量可使用數十次而不使用新的用於移除光阻的剝離劑，因此減小對於移除光阻必要的剝離劑的量。 If a recycling step is included, an amount of the stripper used to remove the photoresist can be used dozens of times without using a new stripper for removing the photoresist, thus reducing the stripper necessary to remove the photoresist The amount.
在光阻移除方法中，藉由以下式1獲得的用於移除光阻的剝離劑的保留率可大於90%，或為自92%至99%。 In the photoresist removal method, the retention rate of the release agent for removing the photoresist obtained by the following Formula 1 may be more than 90%, or may be from 92% to 99%.
[式1]用於移除光阻的剝離劑的保留率(%)=(用於移除光阻的剝離劑在移除之後的質量/用於移除光阻的剝離劑在移除之前的質量)×100。 [Formula 1] Retention rate (%) of the release agent for removing the photoresist = (the quality of the release agent for removing the photoresist after removal / the release agent for removing the photoresist before removal) Quality) × 100.
具體言之，移除之後的用於移除光阻的剝離劑是指根據其他實施例的光阻移除方法製備的包含於用於移除光阻的剝離劑儲存槽中的用於移除光阻的剝離劑，所述光阻移除方法包含在移除之前噴灑用於移除光阻的剝離劑，收集並冷卻在噴灑期間產生的氣體，及恢復經噴灑的用於移除光阻的剝離劑及經冷卻材料。 Specifically, the stripper for removing the photoresist after the removal refers to the removal in the stripper storage tank for removing the photoresist prepared according to the photoresist removal method of other embodiments. a photoresist stripper comprising spraying a stripper for removing photoresist prior to removal, collecting and cooling gas generated during spraying, and restoring sprayed for removing photoresist Stripper and cooled material.
因此，光阻移除方法可顯著地減小用於移除光阻必要的剝離劑的量。 Therefore, the photoresist removal method can significantly reduce the amount of stripper necessary for removing the photoresist.
當藉由以上式1獲得的用於移除光阻的剝離劑的保留率低於90%時，用於移除光阻的必要的剝離劑的量可藉由引入額外量的用於移除光阻的剝離劑來增加。 When the retention rate of the release agent for removing the photoresist obtained by the above formula 1 is less than 90%, the amount of the necessary release agent for removing the photoresist can be introduced by removing an additional amount for removal The photoresist of the photoresist is added.
具體言之，參看圖1，使用光阻移除裝置的光阻移除方法的一個實例將描述如下。 Specifically, referring to Fig. 1, an example of a photoresist removal method using a photoresist removal device will be described below.
儲存於用於移除光阻的剝離劑儲存槽4中的用於移除光阻的剝離劑由泵5沿著第六管道(剝離劑轉移器件16)轉移，並經由過濾器件17過濾。接著，經由剝離劑噴灑器2將經過濾的剝離劑噴灑於位於剝離腔室1中的基板移動器件3上的基板上，藉此進行移除製程。 The stripper for removing the photoresist stored in the stripper storage tank 4 for removing the photoresist is transferred by the pump 5 along the sixth pipe (release agent transfer device 16) and filtered through the filter device 17. Next, the filtered release agent is sprayed onto the substrate on the substrate moving device 3 in the peeling chamber 1 via the stripper sprayer 2, thereby performing a removal process.
在移除製程中，在包含於用於移除光阻的剝離劑中的材料當中，經蒸發材料經由第一管道(轉移管線6)自剝離腔室1流動至冷卻器件7中，且接著在冷卻器件7中進行冷卻。 In the removal process, among the materials contained in the stripper for removing the photoresist, the evaporated material flows from the stripping chamber 1 into the cooling device 7 via the first conduit (transfer line 6), and then Cooling is performed in the cooling device 7.
在剝離腔室1中，已完成移除製程的用於移除光阻的剝離劑經由***器件12恢復至用於移除光阻的剝離劑儲存槽4中。第一流動速率控制閥8經開啟，且接著在冷卻器件7中冷卻的材料沿著第二管道(輸送器件9)經轉移至用於移除光阻的剝離劑儲存槽4，或沿著第三管道(輸送器件10)轉移至剝離腔室1。此時，關閉第二流動速率控制閥11。接著，再次進行移除製程。 In the stripping chamber 1, the stripper for removing the photoresist that has completed the removal process is restored via the draining device 12 into the stripper storage tank 4 for removing the photoresist. The first flow rate control valve 8 is opened, and then the material cooled in the cooling device 7 is transferred along the second conduit (conveying device 9) to the stripper storage tank 4 for removing the photoresist, or along the The three pipes (conveying device 10) are transferred to the stripping chamber 1. At this time, the second flow rate control valve 11 is closed. Then, the removal process is performed again.
廢棄的光阻剝離劑或在用於移除光阻的剝離劑儲存槽4中或過濾器件17中產生的外來材料經由第四管道13轉移至廢液槽14。 The discarded photoresist stripper or foreign material generated in the stripper storage tank 4 for removing the photoresist or in the filter device 17 is transferred to the waste liquid tank 14 via the fourth conduit 13.
根據本發明，提供如下兩者：一種光阻移除裝置，其能夠防止由用於移除光阻的剝離劑的蒸發引起的損耗(此情形減小用 於移除光阻之剝離劑的量)，並能夠維持用於移除光阻的剝離劑的剝離能力；以及一種使用所述光阻移除裝置的光阻移除方法。 According to the present invention, there are provided two: a photoresist removing device capable of preventing loss due to evaporation of a stripping agent for removing a photoresist (this case is reduced) The amount of the release agent for removing the photoresist) and capable of maintaining the peeling ability of the release agent for removing the photoresist; and a photoresist removal method using the photoresist removal device.
在下文中，將參考以下實例詳細地解釋本發明。然而，這些實例僅為了說明本發明概念，且本發明概念之範疇不限於此。 Hereinafter, the present invention will be explained in detail with reference to the following examples. However, these examples are merely illustrative of the inventive concept, and the scope of the inventive concept is not limited thereto.
<製備實例：用於移除光阻的剝離劑的製備> <Preparation Example: Preparation of Release Agent for Removing Photoresist>
混合38wt%的蒸餾水、10wt%的(1-胺基)-異丙醇(AIP)、10wt%的N-甲基甲醯胺(NMF)、41.9wt%的二乙二醇單丁醚(BDG)及0.1wt%的2,2'-[[(甲基-1H-苯并***-1-基)甲基]亞腔基]雙乙醇以製備用於移除光阻的剝離劑。 Mix 38 wt% distilled water, 10 wt% (1-amino)-isopropanol (AIP), 10 wt% N-methylformamide (NMF), 41.9 wt% diethylene glycol monobutyl ether (BDG) And 0.1 wt% of 2,2'-[[(methyl-1H-benzotriazol-1-yl)methyl] subchamber] diethanol to prepare a stripper for removing photoresist.
<實例：光阻移除方法> <Example: Photoresist removal method>
如圖1中所展示，在製備實例中獲得的用於移除光阻的剝離劑置放於剝離腔室的用於移除光阻的剝離劑儲存槽中，使用泵來拉動至剝離劑噴灑器嘴，並在40℃下噴灑至剝離腔室上歷時24小時。 As shown in FIG. 1, the stripping agent for removing the photoresist obtained in the preparation example is placed in a stripper storage tank for removing the photoresist in the stripping chamber, and is pumped to the stripper spray. The nozzle was sprayed onto the stripping chamber at 40 ° C for 24 hours.
在噴灑製程期間蒸發的材料經由管道移動至冷卻器件，並冷卻至25℃的溫度。 The material evaporated during the spraying process was moved to the cooling device via a pipe and cooled to a temperature of 25 °C.
經由用於移除光阻的管道將經冷卻材料注入於剝離劑儲存容器中。 The cooled material is injected into the stripper storage container via a conduit for removing the photoresist.
<比較性實例：光阻移除方法> <Comparative example: photoresist removal method>
如圖2中所展示，以與實例中相同的方式進行移除，唯經冷卻材料經由管道注入至廢液容器中外。 As shown in Figure 2, the removal was carried out in the same manner as in the examples, except that the cooling material was injected into the waste container via a pipe.
<實驗實例：實例及比較性實例的光阻移除效率的量測> <Experimental Example: Measurement of Photoresist Removal Efficiency of Examples and Comparative Examples>
實例及比較性實例的光阻移除方法的效率以如下方法量測，且結果展示於以下表1中。 The efficiencies of the photoresist removal methods of the examples and comparative examples were measured in the following manner, and the results are shown in Table 1 below.
1.含水量(wt%) 1. Water content ( wt% )
在實例及比較性實例的光阻移除方法中，每6小時收集一次包含於用於移除光阻的剝離劑儲存容器中的用於移除光阻的剝離劑的特定量，且根據卡爾費歇爾(Karl Fischcr)水判定方法來量測含水量。 In the resist removal method of the examples and comparative examples, a specific amount of the release agent for removing the photoresist contained in the stripper storage container for removing the photoresist was collected every 6 hours, and according to Karl The Karl Fischcr water determination method is used to measure the water content.
2.用於移除光阻的剝離劑的保留率(%) 2. Retention rate of release agent for removing photoresist ( % )
在實例及比較性實例的光阻移除方法中，每6小時量測一次包含於用於移除光阻的剝離劑儲存容器中的用於移除光阻的剝離劑的質量，且根據以下式1來獲得用於移除光阻的剝離劑的保留率。 In the photoresist removal methods of the examples and comparative examples, the mass of the release agent for removing the photoresist included in the stripper storage container for removing the photoresist was measured every 6 hours, and according to the following Formula 1 is used to obtain the retention rate of the release agent for removing the photoresist.
[式1]用於移除光阻的剝離劑的保留率(%)=(用於移除光阻的剝離劑在移除之後的質量/用於移除光阻的剝離劑在移除之前的質量)×100 [Formula 1] Retention rate (%) of the release agent for removing the photoresist = (the quality of the release agent for removing the photoresist after removal / the release agent for removing the photoresist before removal) Quality) × 100
如表1中所展示，對於實例的光阻移除方法，包含於用於移除光阻的剝離劑中的含水量為自38wt%至33.02wt%，其減小達約5wt%，而對於比較性實例的光阻移除方法，包含於用於移除光阻的剝離劑中的含水量為自38wt%至18.80wt%，其減小達約 20wt%。因此，可確認，相較於比較性實例的光阻移除方法，實例的光阻移除方法可顯著地防止含有於用於移除光阻的剝離劑中的水的減少。 As shown in Table 1, for the photoresist removal method of the example, the water content included in the stripper for removing the photoresist is from 38 wt% to 33.02 wt%, which is reduced by about 5 wt%, and for The photoresist removal method of the comparative example, the water content contained in the release agent for removing the photoresist is from 38 wt% to 18.80 wt%, which is reduced by about 20wt%. Therefore, it was confirmed that the photoresist removal method of the example can significantly prevent the reduction of water contained in the release agent for removing the photoresist, compared to the photoresist removal method of the comparative example.
另外，在實例的光阻移除方法的狀況下，用於移除光阻的剝離劑的保留率即使在24小時移除之後仍為94.16%，而比較性實例的用於移除光阻的剝離劑的保留率為78.25%。因此，相較於比較性實例，實例中用於移除光阻的剝離劑的保留率經極大改良。 In addition, in the case of the photoresist removal method of the example, the retention rate of the release agent for removing the photoresist was 94.16% even after 24 hours of removal, and the comparative example was used to remove the photoresist. The retention rate of the release agent was 78.25%. Therefore, the retention rate of the release agent for removing the photoresist in the examples is greatly improved as compared with the comparative example.
自這些結果可確認，相較於比較性實例的光阻移除方法，實例的光阻移除方法可顯著地防止用於移除光阻的剝離劑的減少。 From these results, it was confirmed that the photoresist removal method of the example can remarkably prevent the reduction of the release agent for removing the photoresist as compared with the photoresist removal method of the comparative example.
1‧‧‧剝離腔室 1‧‧‧ peeling chamber
2‧‧‧剝離劑噴灑器 2‧‧‧Release sprayer
3‧‧‧基板移動器件 3‧‧‧Substrate mobile device
4‧‧‧用於移除光阻的剝離劑儲存槽 4‧‧‧Release storage tank for removing photoresist
5‧‧‧泵 5‧‧‧ pump
6‧‧‧轉移管線 6‧‧‧Transfer line
7‧‧‧冷卻器件 7‧‧‧ Cooling device
8‧‧‧第一流動速率控制閥 8‧‧‧First flow rate control valve
9‧‧‧輸送器件 9‧‧‧Transport device
10‧‧‧輸送器件 10‧‧‧Transport device
11‧‧‧第二流動速率控制閥 11‧‧‧Second flow rate control valve
12‧‧‧***器件 12‧‧‧Excretion device
13‧‧‧第四管道 13‧‧‧ fourth pipeline
14‧‧‧廢液槽 14‧‧‧ Waste tank
15‧‧‧管道 15‧‧‧ Pipes
16‧‧‧剝離劑轉移器件 16‧‧‧Release transfer device
17‧‧‧過濾器件 17‧‧‧Filter device
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| US5671760A (en) * | 1993-12-29 | 1997-09-30 | Hirama Rika Kenkyujo Ltd. | Apparatus for controlling resist stripping solution |
| JP2000147793A (en) * | 1998-11-12 | 2000-05-26 | Mitsubishi Electric Corp | Method for removing photoresist film and apparatus therefor |
| TW584893B (en) * | 2001-10-23 | 2004-04-21 | Ums Co Ltd | Method and apparatus for removing organic films |
| TW200801851A (en) * | 2006-01-20 | 2008-01-01 | Toshiba Kk | Apparatus and method for photoresist removal processing |
| US20130189852A1 (en) * | 2012-01-25 | 2013-07-25 | Tokyo Electron Limited | Liquid processing apparatus, liquid processing method, and storage medium |
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| JP3869566B2 (en) * | 1998-11-13 | 2007-01-17 | 三菱電機株式会社 | Photoresist film removal method and apparatus |
| JP3676957B2 (en) * | 1999-12-03 | 2005-07-27 | シャープ株式会社 | Resist stripping device |
| JP2001267282A (en) * | 2000-03-21 | 2001-09-28 | Dainippon Screen Mfg Co Ltd | Substrate treating device |
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| US5671760A (en) * | 1993-12-29 | 1997-09-30 | Hirama Rika Kenkyujo Ltd. | Apparatus for controlling resist stripping solution |
| JP2000147793A (en) * | 1998-11-12 | 2000-05-26 | Mitsubishi Electric Corp | Method for removing photoresist film and apparatus therefor |
| TW584893B (en) * | 2001-10-23 | 2004-04-21 | Ums Co Ltd | Method and apparatus for removing organic films |
| TW200801851A (en) * | 2006-01-20 | 2008-01-01 | Toshiba Kk | Apparatus and method for photoresist removal processing |
| US20130189852A1 (en) * | 2012-01-25 | 2013-07-25 | Tokyo Electron Limited | Liquid processing apparatus, liquid processing method, and storage medium |
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