TWI581827B - Gas handling device - Google Patents
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Description
本發明係關於將包含對人體有害的氣體、地球暖化氣體、臭氧層破壞氣體等的氣體,特別是從半導體和液晶等的製造過程排出的氣體予以分解處理之裝置。 The present invention relates to a device for decomposing a gas containing a gas harmful to the human body, a global warming gas, an ozone depleting gas, or the like, particularly a gas discharged from a manufacturing process such as a semiconductor or a liquid crystal.
現在,作為製造、處理物品之工業過程,有各式各樣已被開發、實施,從各式各樣的工業過程排出的氣體(以下稱「處理對象氣體」)種類分成非常多。因此,按照從工業過程排出的處理對象氣體種類,分別使用各種的氣體處理方法及氣體處理裝置。 At present, various types of industrial processes for manufacturing and processing articles have been developed and implemented, and the types of gases (hereinafter referred to as "treatment gas") discharged from various industrial processes are widely divided. Therefore, various gas processing methods and gas processing apparatuses are used in accordance with the type of the processing target gas discharged from the industrial process.
例如,舉半導體製造過程為例,是使用甲矽烷(SiH4)、氯氣、PFC(全氟化合物)等各種氣體,當處理對象氣體含有甲矽烷的情況,是採用熱分解式、燃燒式、吸附式或化學反應式等的處理裝置,當處理對象氣體含有氯氣的情況,是採用使用藥液之濕式、吸附式等的處理裝置。此外,當處理對象氣體含有PFC的情況,是採用觸媒式、熱反應式、熱分解式、燃燒式、電漿式的氣體處理裝置。 For example, in the semiconductor manufacturing process, various gases such as methotane (SiH 4 ), chlorine gas, and PFC (perfluorinated compound) are used. When the gas to be treated contains methotane, the thermal decomposition type, combustion type, and adsorption are used. When the treatment target gas contains chlorine gas, a treatment device such as a wet type or an adsorption type using a chemical liquid is used. Further, when the treatment target gas contains PFC, a catalytic type, a thermal reaction type, a thermal decomposition type, a combustion type, or a plasma type gas treatment device is used.
如此般如果對應於工業過程所排出的各種處理對象氣體而逐一準備氣體處理裝置的話,對使用者而言造成裝置管理變複雜且維修所需的時間及成本增加。結果會影響製品均成本而導致製品的成本競爭力降低。 When the gas processing apparatus is prepared one by one corresponding to various processing target gases discharged from the industrial process, the management of the apparatus becomes complicated and the time and cost required for maintenance increase. As a result, the cost of the product is affected and the cost competitiveness of the product is reduced.
於是,由於從工業過程排出的處理對象氣體大多可在高溫下進行熱分解,如果使用專利文獻1所示之熱分解式的氣體處理裝置,亦即在反應器內讓大氣壓電漿噴出,朝向該大氣壓電漿供應處理對象氣體而進行分解處理的裝置,至少能在高溫下熱分解的處理對象氣體不拘其種類都能在一個裝置進行分解處理。又在本說明書中,「大氣壓電漿」意指大氣壓條件下所生成的電漿,是包含熱電漿、微波電漿及火焰之廣義的電漿。 Then, since most of the processing target gas discharged from the industrial process can be thermally decomposed at a high temperature, if the thermal decomposition type gas processing apparatus shown in Patent Document 1 is used, that is, the atmospheric piezoelectric slurry is ejected in the reactor, toward the The atmospheric piezoelectric slurry is supplied to the apparatus to be subjected to decomposition treatment, and at least the processing target gas which can be thermally decomposed at a high temperature can be decomposed in one apparatus regardless of the type. In the present specification, "atmospheric piezoelectric slurry" means a plasma generated under atmospheric pressure, and is a generalized plasma containing thermoelectric plasma, microwave plasma, and flame.
[專利文獻1]日本特開2000-334294號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-334294
如上述般,使用大氣壓電漿之熱分解式的氣體處理裝置,雖然汎用性非常高,但例如對於像磊晶、擴散、LPCVD(減壓CVD)、太陽電池的電漿CVD等之各製程所排出的處理對象氣體這種氫等的可燃性氣體(相對於氮流量為數%~數倍)以非常高濃度存在的情況,有適用上的問題。 As described above, a gas decomposition apparatus using a thermal decomposition type of atmospheric piezoelectric slurry has a very high versatility, but is, for example, a process such as epitaxy, diffusion, LPCVD (reduced pressure CVD), plasma CVD of a solar cell, and the like. There is a problem in application when the flammable gas such as hydrogen (the flow rate of nitrogen is several to several times with respect to the flow rate of nitrogen) is present at a very high concentration.
亦即,如此般混合有高濃度的氫等的可燃性氣體之處理對象氣體,只要氧等的助燃性氣體以微量混入就會使燃燒、***的環境齊備,非常危險。上述習知之使用大氣壓電漿的熱分解式氣體處理裝置,由於構成為使處理對象氣體和氧等的助燃性氣體在反應器內較接近的位置進行混合的構造,燃燒空間會從反應器內朝向供應處理對象氣體之 配管的上游反遡而有發生所謂「逆火」的危險性。 In other words, the gas to be treated which is a flammable gas such as a high-concentration hydrogen is mixed in a small amount as long as the combustion-supporting gas such as oxygen is mixed in a small amount, which is extremely dangerous. The thermal decomposition type gas processing apparatus using the atmospheric piezoelectric slurry is configured such that the combustion-promoting gas such as the gas to be treated and the combustion-promoting gas such as oxygen are mixed at a position closer to the reactor, and the combustion space is directed from the inside of the reactor. Supply processing gas There is a risk of so-called "backfire" in the upstream of the piping.
因此,本發明的所欲解決之主要問題,是為了提供一種氣體處理裝置,縱使氫等的可燃氣體以高濃度流入,仍能將包含其之各種處理對象氣體安全且確實地一起施以無害化。 Therefore, the main problem to be solved by the present invention is to provide a gas treatment device capable of safely and surely applying various gas to be treated in a safe manner even when a combustible gas such as hydrogen flows in at a high concentration. .
本發明中的第1發明,是一種氣體處理裝置10,「在水槽18上豎設筒狀的反應器12,從位於該反應器12的上部之入口埠28供應處理對象氣體F,在前述反應器12的內部進行前述處理對象氣體F的熱分解後,從設置於前述反應器12的下部之排出口12a將熱分解處理後的排氣G排出,其特徵在於,前述反應器12,使其下端面開口,透過此下端開口12b導入經由前述水槽18內的水W中送來之氧化性氣體A」。 The first invention of the present invention is a gas processing apparatus 10 in which a cylindrical reactor 12 is vertically erected on a water tank 18, and a treatment target gas F is supplied from an inlet port 28 located at an upper portion of the reactor 12, in the above reaction. After the thermal decomposition of the processing target gas F is performed inside the inside of the reactor 12, the exhaust gas G after the thermal decomposition treatment is discharged from the discharge port 12a provided at the lower portion of the reactor 12, and the reactor 12 is caused to The lower end surface is opened, and the oxidizing gas A" sent through the water W in the water tank 18 is introduced through the lower end opening 12b.
依據本發明,在朝排出口12a方向最遠離反應器12內的熱分解空間、且與排出口12a和水槽18的水W最接近之位置B,讓熱分解處理後的排氣G和氧化性氣體A(助燃性氣體)接觸,因此處理對象排氣F中的氫等的可燃性氣體不致發生逆火而能安全地燃燒,能將其等轉換成無害的不燃性氣體,例如可燃性氣體為氫的情況轉換成水(水蒸氣),同時使可燃性氣體的濃度成為***界限濃度以下。 According to the present invention, the exhaust gas G and the oxidizing property after the thermal decomposition treatment are disposed at a position B which is farthest from the thermal decomposition space in the reactor 12 toward the discharge port 12a and which is closest to the discharge port 12a and the water W of the water tank 18. Since the gas A (the combustion-supporting gas) is in contact with each other, the combustible gas such as hydrogen in the exhaust gas F to be treated can be burned safely without causing backfire, and can be converted into a harmless non-combustible gas, for example, a combustible gas. The hydrogen is converted into water (water vapor) while the concentration of the combustible gas is below the explosive limit concentration.
此外,由於構成為使氧化性氣體A經由水槽18內的 水W中後導入反應器12,亦即將供應氧化性氣體A的配管之前端配設於水槽18內的水W中之構造,例如在反應器12內,縱使處理對象氣體F中的甲矽烷、TEOS、WF6等氧化而產生固態物的情況,也不用擔心該固態物會堵住氧化性氣體A的供應路徑。 Further, since it is configured such that the oxidizing gas A passes through the water tank 18 The water W is introduced into the reactor 12, that is, the structure in which the front end of the piping for supplying the oxidizing gas A is disposed in the water W in the water tank 18, for example, in the reactor 12, even in the gas F of the treatment target gas F, When TEOS, WF6, etc. are oxidized to produce a solid matter, there is no fear that the solid matter will block the supply path of the oxidizing gas A.
又本發明的氣體處理裝置10較佳為「在前述反應器12設置將其內面用水W覆蓋之水供應手段16」。藉由如此般設置水供應手段16,能在反應器12的內面大致全體形成「濕潤壁」。因此,當伴隨處理對象氣體F而在反應器12內有固態成分進入的情況、當處理對象氣體F在反應器12內進行熱分解時伴生固態成分的情況,該等的固態成分在附著於反應器12內面之前會和覆蓋反應器12內面之水W接觸而溶解於該水W中,或和該水W一起流到反應器12外。因此,能防止進入反應器12內、或在反應器12內伴生之固態成分與反應器12內面接觸而發生附著、堆積。此外,藉由形成「濕潤壁」,能防止反應器12內面直接曝露於高溫,而能減緩該內面的劣化。 Further, in the gas treatment device 10 of the present invention, it is preferable that "the water supply means 16 for covering the inner surface of the reactor 12 with water W" is provided. By providing the water supply means 16 in this manner, a "wet wall" can be formed on substantially the entire inner surface of the reactor 12. Therefore, when there is a solid component in the reactor 12 accompanying the treatment target gas F, and a solid component is accompanied when the treatment target gas F is thermally decomposed in the reactor 12, the solid components are attached to the reaction. The inner surface of the vessel 12 is previously dissolved in the water W in contact with the water W covering the inner surface of the reactor 12, or flows out of the reactor 12 together with the water W. Therefore, it is possible to prevent the solid components entering the reactor 12 or accompanying the inside of the reactor 12 from coming into contact with the inner surface of the reactor 12 to cause adhesion and deposition. Further, by forming the "wet wall", it is possible to prevent the inner surface of the reactor 12 from being directly exposed to a high temperature, and the deterioration of the inner surface can be alleviated.
此外,本發明較佳為「設有將前述反應器12所排出的熱分解處理後的排氣G施以水洗之後段濕式洗淨器22」。本發明的氣體處理裝置10,由於在反應器12的排出口12a附近B進行可燃性氣體和氧化性氣體A的燃燒,剛離開反應器12後的排氣溫度會上昇。藉由在反應器12的後段設置後段濕式洗淨器22,能將成為高溫而從反應器12排出之熱分解處理後的排氣G馬上降溫至常溫 左右,且能將處理對象氣體F熱分解時所產生的水溶性成分、固態成分自排氣G中予以水洗除去,能使熱分解後的排氣G以更清淨的狀態往大氣中排出。 Further, in the present invention, it is preferable to "provide that the exhaust gas G after the thermal decomposition treatment discharged from the reactor 12 is subjected to a water-washing stage after-stage wet scrubber 22". In the gas treatment device 10 of the present invention, since the combustion of the combustible gas and the oxidizing gas A is performed in the vicinity of the discharge port 12a of the reactor 12, the temperature of the exhaust gas immediately after leaving the reactor 12 rises. By providing the after-stage wet scrubber 22 in the rear stage of the reactor 12, the exhaust gas G after the thermal decomposition treatment which is discharged from the reactor 12 at a high temperature can be immediately cooled to the normal temperature. The water-soluble component and the solid component generated when the treatment target gas F is thermally decomposed can be washed and removed from the exhaust gas G, and the exhaust gas G after the thermal decomposition can be discharged to the atmosphere in a cleaner state.
再者,本發明的氣體處理裝置10較佳為「可對應於前述排氣G的流量改變前述排出口12a的口徑,供應前述氧化性氣體A之氧化性氣體供應配管36的前端,配置在前述水槽18內的水W中,且安裝有起泡器44,可對應於前述氧化性氣體A的流量而使上述起泡器44在水W中的配設位置上下改變」。如此,能使反應器12內的無害化效率進一步提昇。 In addition, the gas processing apparatus 10 of the present invention preferably has a front end that can change the diameter of the discharge port 12a in accordance with the flow rate of the exhaust gas G, and supplies the oxidizing gas supply pipe 36 to the front end of the oxidizing gas supply pipe 36. In the water W in the water tank 18, a bubbler 44 is attached, and the bubbler 44 can be changed up and down in the water W in accordance with the flow rate of the oxidizing gas A. In this way, the detoxification efficiency in the reactor 12 can be further improved.
依據本發明可提供一種氣體處理裝置,縱使氫等的可燃氣體以高濃度流入,仍能將包含其之各種處理對象氣體安全且確實地一起施以無害化。 According to the present invention, it is possible to provide a gas processing apparatus capable of safely and surely applying various kinds of processing target gases contained therein even when a combustible gas such as hydrogen flows in at a high concentration.
以下根據圖示的實施例來說明本發明。第1圖顯示本實施例的氣體處理裝置10概要之構造圖。如圖所示,本實施例之氣體處理裝置10,大略是由反應器12、電漿產生裝置14、水供應手段16、水槽18、氧化性氣體供應手段20及後段濕式洗淨器22等所構成。又在本實施例雖例示出作為熱源是使用電漿產生裝置14的情況,氣體處理裝置10所使用的熱源並不限定於此裝置,也能是未圖示 的火焰燃燒器、電熱加熱器等。 The invention will now be described in accordance with the illustrated embodiments. Fig. 1 is a view showing the outline of the gas processing apparatus 10 of the present embodiment. As shown in the figure, the gas treatment device 10 of the present embodiment is roughly composed of a reactor 12, a plasma generating device 14, a water supply means 16, a water tank 18, an oxidizing gas supply means 20, a rear stage wet type cleaner 22, and the like. Composition. Further, in the present embodiment, the case where the plasma generating device 14 is used as the heat source is exemplified, and the heat source used in the gas processing device 10 is not limited to this device, and may be not shown. Flame burners, electric heaters, etc.
反應器12,是包圍電漿產生裝置14所產生的大氣壓電漿P和處理對象氣體F而在其內部將處理對象氣體F進行熱分解之裝置,具體而言是由圓筒狀的外筒12x及圓筒狀的內筒12y所構成之雙層管,該外筒12x,其兩端面封閉,被豎設於水槽18上;該內筒12y,被收容於外筒12x內側,直徑比外筒12x小且兩端面開放,其上端部配置成在與外筒12x之上端面間形成間隙,其下端部是貫穿外筒12x的下端面而延伸到水槽18內。 The reactor 12 is a device that surrounds the atmospheric piezoelectric slurry P and the processing target gas F generated by the plasma generating device 14 and thermally decomposes the processing target gas F therein, specifically, a cylindrical outer cylinder 12x. And a double tube formed by the cylindrical inner tube 12y, the outer tube 12x is closed at both end faces and is erected on the water tank 18; the inner tube 12y is received inside the outer tube 12x, and has a diameter larger than the outer tube The 12x is small and the both end faces are open, and the upper end portion thereof is disposed to form a gap between the end surface of the outer cylinder 12x and the lower end portion thereof extends through the lower end surface of the outer cylinder 12x and extends into the water tank 18.
在該反應器12之外筒12x內周面和內筒12y外周面之間所形成的空間形成有水貯留部24,該水貯留部24是將沿著反應器12(更具體的說是內筒12y)的內面流過的水W暫時地貯留。 A space formed between the inner circumferential surface of the outer tube 12x and the outer circumferential surface of the inner cylinder 12y of the reactor 12 is formed with a water storage portion 24 which will be along the reactor 12 (more specifically, inside) The water W flowing through the inner surface of the cylinder 12y) is temporarily stored.
此外,在外筒12x的上端面,在其中心設有電漿噴射孔26,在該電漿噴射孔26的周邊設置一或複數個(第1圖所示的實施例為2個)入口埠28,在該入口埠28連結著,用來將各種工業過程所排出的處理對象氣體F導入反應器12內之入口導管30。 Further, on the upper end surface of the outer cylinder 12x, a plasma injection hole 26 is provided at the center thereof, and one or a plurality of (two in the embodiment shown in Fig. 1) inlets 28 are provided around the plasma injection hole 26. The inlet port 28 is connected to the inlet duct 30 for introducing the process target gas F discharged from various industrial processes into the reactor 12.
又在該入口導管30,可設置朝向處理對象氣體F噴水之前段濕式洗淨器(未圖示)。藉由設置這種洗淨器,當處理對象氣體F本身含有許多固態成分、水溶性成分的情況,在將處理對象氣體F供應給反應器12之前能從該處理對象氣體F中將固態成分、水溶性成分予以水洗除去,可減少反應器12所要處理之固態成分、水溶性成分的 量。 Further, in the inlet duct 30, a wet scrubber (not shown) before the water spray toward the processing target gas F can be provided. By providing such a scrubber, when the treatment target gas F itself contains many solid components and water-soluble components, the solid component can be obtained from the treatment target gas F before the treatment target gas F is supplied to the reactor 12. The water-soluble component is washed with water to reduce the solid component and water-soluble component to be treated in the reactor 12. the amount.
而且,在延伸到水槽18內之內筒12y的下部、亦即反應器12的下部(在本實施例的情況是在其側面),設有將熱分解處理後的處理對象氣體F(亦即排氣G)從內筒12b之內側朝向外側排出之排出口12a。此外,如上述般,內筒12y的下端面是開放的而設有下端開口12b,透過該下端開口12b使水槽18的水W充滿到排出口12a附近。 Further, a lower portion of the inner cylinder 12y extending into the water tank 18, that is, a lower portion of the reactor 12 (in the case of the present embodiment, a side surface thereof) is provided with a treatment target gas F after thermal decomposition treatment (i.e., The exhaust gas G) is a discharge port 12a that is discharged from the inner side of the inner cylinder 12b toward the outer side. Further, as described above, the lower end surface of the inner cylinder 12y is open and the lower end opening 12b is provided, and the water W of the water tank 18 is filled into the vicinity of the discharge port 12a through the lower end opening 12b.
在此,上述排出口12a如第2圖所示般,更佳為設置在使其下側的一部分與水W接觸的位置。如此,能讓排氣G和後述氧化性氣體A在水面附近更安全地進行反應。 Here, as shown in FIG. 2, the discharge port 12a is preferably provided at a position where a part of the lower side thereof is in contact with the water W. In this way, the exhaust gas G and the oxidizing gas A described later can be more safely reacted in the vicinity of the water surface.
此外,雖未圖示,上述排出口12a較佳為例如藉由開閉器機構等而使其口徑可對應於排氣G流量而改變。如此,縱使是排氣G流量較少的情況,仍能讓該排氣G和後述氧化性氣體A效率良好地接觸並反應。 Further, although not shown, the discharge port 12a is preferably changed in accordance with the flow rate of the exhaust gas G by a shutter mechanism or the like, for example. As described above, even if the flow rate of the exhaust gas G is small, the exhaust gas G can be efficiently contacted and reacted with the oxidizing gas A described later.
電漿產生裝置14是用來生成高溫的大氣壓電漿P,係包含:內部具備電極之電漿炬14a、用來對電漿炬14a的電極施加電位之直流電源(未圖示)、以及對電漿炬14a供應作動氣體之作動氣體供應裝置(未圖示)等。其中,電漿炬14a安裝於外筒12x之上端外面中央部,藉此能從電漿噴射孔26朝向反應器12之內筒12y內部噴射大氣壓電漿P。 The plasma generating device 14 is an atmospheric piezoelectric slurry P for generating a high temperature, and includes a plasma torch 14a having an electrode therein, a DC power source (not shown) for applying a potential to the electrodes of the plasma torch 14a, and a pair. The electric torch 14a supplies an operating gas supply device (not shown) or the like for the operating gas. Among them, the plasma torch 14a is attached to the central portion of the outer surface of the upper end of the outer cylinder 12x, whereby the atmospheric piezoelectric slurry P can be ejected from the plasma injection hole 26 toward the inside of the inner cylinder 12y of the reactor 12.
水供應手段16,是沿著內筒12y內面讓水W流過的 手段,在本實施例係包含:上述水貯留部24、用來連通水槽18和水貯留部24之水供應配管32、以及將水槽18所貯存的水W供應給水貯留部24之泵34。亦即,將水槽18的水W供應給水貯留部24,從內筒12y上端讓水W溢流,使其等發揮沿著內筒12y內面讓水W流過之水供應手段16的作用。 The water supply means 16 is for allowing the water W to flow along the inner surface of the inner cylinder 12y. In the present embodiment, the water storage portion 24, the water supply pipe 32 for connecting the water tank 18 and the water storage portion 24, and the pump 34 for supplying the water W stored in the water tank 18 to the water storage portion 24 are included. In other words, the water W of the water tank 18 is supplied to the water storage unit 24, and the water W is overflowed from the upper end of the inner cylinder 12y, and the water supply means 16 for allowing the water W to flow along the inner surface of the inner cylinder 12y.
此外,在水供應配管32,使泵34之吐出側部分分歧而形成歧管32a,透過該歧管32a對於設置於水槽18的內部空間壁面之噴嘴32b供應水W,藉此朝向該水槽18的內部空間及內壁面讓噴淋水噴出。 Further, in the water supply pipe 32, the discharge side portion of the pump 34 is branched to form a manifold 32a, and the water is supplied to the nozzle 32b provided on the inner space wall surface of the water tank 18 through the manifold 32a, thereby facing the water tank 18. The inner space and the inner wall surface allow the spray water to be ejected.
水槽18,是用來貯留在上述水供應手段16循環的水W、及後述後段濕式洗淨器22所使用的新水NW,而在其內部空間讓藉由反應器12進行熱分解處理後的排氣G流通之密閉容器體,其內面是由耐熱及耐腐蝕性的材料所構成。在該水槽18設有冷卻器18a,在該冷卻器18a的內部讓冷卻水C循環而使水槽18內的水W保持既定溫度(本實施例的情況為30℃)。此外,水槽18內的水位被控制成不會比基準水面位置更高。 The water tank 18 is for storing the water W circulating in the water supply means 16 and the fresh water NW used in the latter stage wet cleaning device 22, and after the internal space is thermally decomposed by the reactor 12 The sealed container body through which the exhaust gas G flows has an inner surface made of a material resistant to heat and corrosion. The water tank 18 is provided with a cooler 18a, and the cooling water C is circulated inside the cooler 18a to maintain the water W in the water tank 18 at a predetermined temperature (in the case of the present embodiment, 30 ° C). In addition, the water level in the water tank 18 is controlled to be no higher than the reference water level position.
氧化性氣體供應手段20,是用來對反應器12的內部供應能幫助氫等的可燃性氣體燃燒(亦即成為助燃性氣體)之氧化性氣體A,大略包含:氧化性氣體供應配管36、朝向該氧化性氣體供應配管36的前端傳送氧化性氣體A之吹送機38、計測在氧化性氣體供應配管36內流通之氧化性氣體A的流量之流量計40、根據流量計40的計測值 調整在氧化性氣體供應配管36內流通之氧化性氣體A的流量之閥42。在此,本發明的「氧化性氣體A」是指讓其他物質點火或幫助燃燒的氣體,不單指氧氣單體,只要是含氧的氣體即可,其氧濃度沒有特別的限定,概念上也包含一般大氣。 The oxidizing gas supply means 20 is an oxidizing gas A for supplying a combustible gas capable of assisting hydrogen or the like (that is, a combustion-supporting gas) to the inside of the reactor 12, and roughly includes an oxidizing gas supply pipe 36, A blower 38 that transports the oxidizing gas A toward the tip end of the oxidizing gas supply pipe 36, a flow meter 40 that measures the flow rate of the oxidizing gas A flowing through the oxidizing gas supply pipe 36, and a measurement value according to the flow meter 40 The valve 42 that regulates the flow rate of the oxidizing gas A flowing through the oxidizing gas supply pipe 36 is adjusted. Here, the "oxidizing gas A" of the present invention refers to a gas which ignites or assists combustion of other substances, and does not only refer to an oxygen monomer, as long as it is an oxygen-containing gas, and the oxygen concentration thereof is not particularly limited, and conceptually Contains the general atmosphere.
此外,上述氧化性氣體供應配管36的前端,配設於水槽18內的水W中之反應器12的下端開口12b正下方的位置,在其前端裝設有起泡器44。因此,通過氧化性氣體供應配管36送來的氧化性氣體A,藉由安裝於該配管36前端之起泡器44形成微細氣泡後,從下端開口12b供應給反應器12的下部。如此般將氧化性氣體A經由起泡器44形成微細氣泡後供應給反應器12內,能讓該氧化性氣體A和熱分解處理後的排氣G效率良好地接觸。 Further, the tip end of the oxidizing gas supply pipe 36 is disposed at a position directly below the lower end opening 12b of the reactor 12 in the water W in the water tank 18, and a bubbler 44 is attached to the tip end. Therefore, the oxidizing gas A sent through the oxidizing gas supply pipe 36 is formed into fine bubbles by the bubbler 44 attached to the tip end of the pipe 36, and then supplied to the lower portion of the reactor 12 from the lower end opening 12b. The oxidizing gas A is supplied into the reactor 12 via the bubbler 44 in this manner, and the oxidizing gas A and the exhaust gas G after the thermal decomposition treatment can be efficiently contacted.
在此,上述起泡器44如第2圖所示般,較佳為配置於反應器12的內筒12y內。如此,透過起泡器44所供應的氧化性氣體A能毫無遺漏地利用於與排氣G進行反應。 Here, as shown in FIG. 2, the bubbler 44 is preferably disposed in the inner cylinder 12y of the reactor 12. Thus, the oxidizing gas A supplied through the bubbler 44 can be utilized for reaction with the exhaust gas G without any exhaustion.
此外,該起泡器44較佳為,可對應於氧化性氣體A流量而使其在水W中的配設位置上下改變。如此,例如氧化性氣體A的供應量多而在起泡器44產生多量的泡,藉由該泡使內筒12y內產生水飛沫而對大氣壓電漿P造成影響的情況,可降低起泡器44的配設位置而使其離開水面,藉此可解決上述問題(水飛沫所造成之影響大氣壓電漿P)。結果,可效率良好地進行處理對象氣體的無害 化。 Further, it is preferable that the bubbler 44 be changed up and down in the arrangement position of the water W in accordance with the flow rate of the oxidizing gas A. Thus, for example, when the supply amount of the oxidizing gas A is large and a large amount of bubbles are generated in the bubbler 44, the bubbles are caused to cause the water droplets in the inner cylinder 12y to affect the atmospheric piezoelectric slurry P, and the bubbler can be lowered. The position of 44 is removed from the water surface, thereby solving the above problem (the influence of water droplets on the atmospheric piezoelectric slurry P). As a result, the gas to be treated can be efficiently performed without harm. Chemical.
後段濕式洗淨器22,是將處理對象氣體F熱分解時所產生之水溶性成分、固態成分從排氣G中予以水洗除去的裝置,係具備:直管形的洗淨器本體22a、配設於洗淨器本體22a內之兩個噴嘴22b,22c、以及金屬絲網等所構成之噴霧捕集分離器22d。 The latter-stage wet scrubber 22 is a device that removes water-soluble components and solid components generated when the treatment target gas F is thermally decomposed from the exhaust gas G, and includes a straight tubular cleaner body 22a, The two nozzles 22b and 22c disposed in the washer body 22a and the spray trap separator 22d formed of a wire mesh or the like.
該後段濕式洗淨器22,是與反應器12同樣地豎設於水槽18上面,使兩個噴嘴22b,22c所噴出的新水NW返回水槽18。 The rear stage wet scrubber 22 is vertically erected on the water tank 18 in the same manner as the reactor 12, and returns the fresh water NW discharged from the two nozzles 22b and 22c to the water tank 18.
而且,後段濕式洗淨器22的頂部出口連接於排氣風扇46之吸入側,該排氣風扇46是用來將處理完畢的排氣G朝大氣中釋出,在該排氣風扇46之吐出側連接著排氣導管48。 Moreover, the top outlet of the rear stage wet scrubber 22 is connected to the suction side of the exhaust fan 46, and the exhaust fan 46 is for releasing the processed exhaust gas G to the atmosphere, and the exhaust fan 46 is An exhaust duct 48 is connected to the discharge side.
又在本實施例之氣體處理裝置10,連接於反應器12的入口埠28之入口導管30和排氣風扇46之吸入側,是藉由常閉的旁通配管50連通,再者,在排氣風扇46的吸入側透過通氣閥52連接著大氣導入配管54,該大氣導入配管54是用來將大氣導入從反應器12排出之熱分解處理後的排氣G流路。 Further, in the gas processing apparatus 10 of the present embodiment, the inlet duct 30 connected to the inlet port 28 of the reactor 12 and the suction side of the exhaust fan 46 are connected by the normally closed bypass pipe 50, and further, in the row. The suction side of the air fan 46 is connected to the air introduction pipe 54 through a vent valve 52, and the air introduction pipe 54 is an exhaust gas G flow path for introducing the atmosphere into the thermal decomposition process discharged from the reactor 12.
藉此,當反應器12內發生任何異常的情況,使原先將旁通配管50常閉之旁通閥56全開而讓處理對象氣體F流通於旁通配管50,並使通氣閥52全開而將多量的大氣導入排氣G流路,藉此能將處理對象氣體F稀釋到安全濃度後緊急排出。 In this case, when any abnormality occurs in the reactor 12, the bypass valve 56 that normally closes the bypass pipe 50 is completely opened, and the processing target gas F is caused to flow through the bypass pipe 50, and the vent valve 52 is fully opened. A large amount of air is introduced into the exhaust gas G flow path, whereby the target gas F can be diluted to a safe concentration and discharged urgently.
使用第1圖所示的氣體處理裝置10將處理對象氣體F分解時,首先,雖未圖示出,是讓作動氣體供應裝置作動,一邊藉由質量流量控制手段控制流量一邊將作動氣體傳送給電漿炬14a。 When the gas to be treated F is decomposed by the gas processing apparatus 10 shown in Fig. 1, first, although not shown, the operating gas supply device is operated, and the flow rate is controlled by the mass flow control means to transmit the operating gas to the electric power. Slurry 14a.
接著,讓泵34作動,將水槽18所貯留的水W供應給反應器12的水貯留部24及設置於水槽18的內部空間之噴嘴32b。藉此,使水貯留部24內所充滿的水W從內筒12y的上端溢流到內筒12y內面,讓該溢流的水W沿著內筒12y的內面往圖中的下方流動而在內筒12y的內面大致全體形成所謂「濕潤壁」。形成「濕潤壁」的水W當中,除了藉由大氣壓電漿P的熱進行氣化的分量以外都返回水槽18,再度藉由泵34供應給反應器12等。此外,也開始進行朝後部濕式洗淨器22的噴嘴22b,22c之新水NW供應。 Next, the pump 34 is actuated to supply the water W stored in the water tank 18 to the water storage portion 24 of the reactor 12 and the nozzle 32b provided in the internal space of the water tank 18. Thereby, the water W filled in the water storage portion 24 overflows from the upper end of the inner cylinder 12y to the inner surface of the inner cylinder 12y, and the overflowed water W flows along the inner surface of the inner cylinder 12y toward the lower side in the drawing. On the inner surface of the inner cylinder 12y, a so-called "wet wall" is formed substantially entirely. The water W forming the "wet wall" is returned to the water tank 18 except for the component which is vaporized by the heat of the atmospheric piezoelectric slurry P, and is again supplied to the reactor 12 or the like by the pump 34. In addition, the supply of new water NW to the nozzles 22b, 22c of the rear wet scrubber 22 is also started.
在內筒12y的內面形成「濕潤壁」之後,讓未圖示的直流電源作動,藉此在電漿炬14a的電極間施加電壓,從電漿噴射孔26噴出大氣壓電漿P。 After the "wet wall" is formed on the inner surface of the inner cylinder 12y, a DC power source (not shown) is actuated to apply a voltage between the electrodes of the plasma torch 14a, and the atmospheric piezoelectric slurry P is ejected from the plasma injection hole 26.
接著,當反應器12內的溫度到達能將處理對象氣體F實施熱分解之既定設定溫度時,讓排氣風扇46作動。如此,使氣體處理裝置10的內部全體成為負壓,從處理對象氣體F產生源經由排氣導管(未圖示)供應的處理對象氣體F,依序經由入口導管30及入口埠28而導入反應器12的內部後,朝向大氣壓電漿P供應,利用該大氣壓電漿P的熱進行熱分解。 Next, when the temperature in the reactor 12 reaches a predetermined set temperature at which the treatment target gas F can be thermally decomposed, the exhaust fan 46 is actuated. In this way, the entire inside of the gas processing apparatus 10 is subjected to a negative pressure, and the processing target gas F supplied from the source of the processing target gas F via the exhaust duct (not shown) is sequentially introduced into the reaction via the inlet duct 30 and the inlet port 28 After the inside of the device 12, it is supplied toward the atmospheric piezoelectric slurry P, and is thermally decomposed by the heat of the atmospheric piezoelectric slurry P.
在此,當處理對象氣體F的種類例如為含有甲矽烷等的矽化合物的情況,處理對象氣體F熱分解時會生成二氧化矽(SiO2)等的固態成分。該固態成分具有在反應器的內筒表面容易附著堆積的性質,但在本實施例的氣體處理裝置10,藉由沿著內筒12y的內面讓水W流過而在內筒12y的內面大致全體形成「濕潤壁」,因此該固態成分在附著於內筒12y的內面之前,會和沿著內筒12y內面流過的水W接觸而溶解於該水W中,或和該水W一起從下端開口12b流到反應器12外。 Here, when the type of the processing target gas F is, for example, a ruthenium compound containing carbene or the like, a solid component such as cerium oxide (SiO 2 ) is generated when the treatment target gas F is thermally decomposed. The solid component has a property of easily adhering to the inner cylinder surface of the reactor. However, in the gas treatment device 10 of the present embodiment, the water W flows through the inner surface of the inner cylinder 12y to the inside of the inner cylinder 12y. The surface of the inner surface of the inner cylinder 12y is in contact with the water W flowing along the inner surface of the inner cylinder 12y, and is dissolved in the water W, or The water W flows together from the lower end opening 12b to the outside of the reactor 12.
接下來,利用大氣壓電漿P的熱進行熱分解處理後之排氣G,在與反應器12下部的排出口12a及水槽18的水W最接近之位置B,與經由水槽18的水W中供應給反應器12內之氧化性氣體A保持高溫狀態而接觸。藉此,使氫等的可燃性氣體燃燒,而轉換成水(水蒸氣)等無害的不燃性氣體。 Next, the exhaust gas G subjected to the thermal decomposition treatment by the heat of the atmospheric piezoelectric slurry P is at the position B closest to the discharge port 12a of the lower portion of the reactor 12 and the water W of the water tank 18, and the water W passing through the water tank 18. The oxidizing gas A supplied to the reactor 12 is kept in contact at a high temperature. Thereby, the combustible gas such as hydrogen is burned and converted into a harmless incombustible gas such as water (water vapor).
從排出口12a往水槽18內部排出的排氣G,通過水槽18上面和水面之間所形成的空間,導入豎設於水槽18的上面之後段濕式洗淨器22。在該後段濕式洗淨器22,除了能將經由可燃性氣體和氧化性氣體A的燃燒而成為更高溫之熱分解處理後的排氣G馬上降溫至常溫左右,還能將處理對象氣體F進行熱分解時所產生的水溶性成分、固態成分從排氣G中予以水洗除去,而將熱分解後的排氣G以更清淨的狀態往大氣中排出。 The exhaust gas G discharged from the discharge port 12a to the inside of the water tank 18 is introduced into the upper surface of the water tank 18 through the space formed between the upper surface of the water tank 18 and the water surface. In the latter stage of the wet scrubber 22, the exhaust gas G after the thermal decomposition treatment which is subjected to higher temperature by the combustion of the combustible gas and the oxidizing gas A can be immediately cooled to about room temperature, and the treatment target gas F can be further processed. The water-soluble component and the solid component generated during thermal decomposition are washed away from the exhaust gas G, and the thermally decomposed exhaust gas G is discharged to the atmosphere in a cleaner state.
而且,通過後段濕式洗淨器22後的排氣G,視情況 是在排氣風扇46的前方,與從大氣導入配管54透過通氣閥52導入的空氣混合後,透過排氣風扇46傳送給排氣導管48而往系統外釋出。 Moreover, the exhaust gas G after passing through the rear stage wet scrubber 22, as the case may be In front of the exhaust fan 46, it is mixed with the air introduced from the air introduction pipe 54 through the vent valve 52, and then transmitted to the exhaust duct 48 through the exhaust fan 46 to be released to the outside of the system.
在此,使用本實施例的氣體處理裝置10實際進行處理對象氣體F的無害化處理的結果如下。亦即,電漿以直流電壓100V左右、直流電流60A始終放電。這時,作為作動氣體之氮氣流量為25L(升)/min.左右。 Here, the result of actually performing the detoxification treatment of the processing target gas F by using the gas processing apparatus 10 of the present embodiment is as follows. That is, the plasma is always discharged at a DC voltage of about 100 V and a DC current of 60 A. At this time, the flow rate of nitrogen as the operating gas is about 25 L (liter) / min.
在此條件下,在兩個入口埠28分別導入處理對象氣體F,該處理對象氣體F是對於氮氣100L/min.讓2L/min.的SiH4及100L/min.的H2混合而構成,透過氧化性氣體供應手段20將作為氧化性氣體A之空氣以500L/min.的流量供應給反應器12內,進行熱分解處理。結果,在排氣風扇46的出口測定之SiH4濃度為未達檢出界限1ppm,H2濃度也未達檢出界限100ppm。此外,並未發生逆火等的異常燃燒,可安全地進行處理對象氣體F之無害化處理。 Under these conditions, the processing target gas F is introduced into the two inlet ports 28, and the processing target gas F is composed of 2 L/min. of SiH 4 and 100 L/min. of H 2 for nitrogen gas 100 L/min. The air as the oxidizing gas A was supplied into the reactor 12 at a flow rate of 500 L/min. by the oxidizing gas supply means 20, and subjected to thermal decomposition treatment. As a result, the SiH 4 concentration measured at the outlet of the exhaust fan 46 was less than the detection limit of 1 ppm, and the H 2 concentration did not reach the detection limit of 100 ppm. Further, abnormal combustion such as backfire does not occur, and the harmless treatment of the treatment target gas F can be performed safely.
依據本實施例之氣體處理裝置10,在朝排出口12a方向最遠離反應器12內的熱分解空間、且與排出口12a和水槽18的水W最接近之位置B,讓熱分解處理後的排氣G和氧化性氣體A(助燃性氣體)接觸,因此處理對象排氣F中的氫等的可燃性氣體不致發生逆火而能安全地燃燒,能將其等轉換成無害的不燃性氣體,同時使可燃性氣體的濃度成為***界限濃度以下。 According to the gas treatment device 10 of the present embodiment, at the position B which is farthest from the thermal decomposition space in the reactor 12 toward the discharge port 12a and which is closest to the discharge port 12a and the water W of the water tank 18, the thermal decomposition treatment is performed. Since the exhaust gas G is in contact with the oxidizing gas A (combustion gas), the combustible gas such as hydrogen in the exhaust gas F to be treated can be burned safely without causing backfire, and can be converted into a harmless incombustible gas. At the same time, the concentration of the flammable gas is below the explosive limit concentration.
此外,由於構成為使氧化性氣體A經由水槽18內的 水W中後導入反應器12、亦即將供應氧化性氣體A的配管之前端配設於水槽18內的水W中之構造,例如在反應器12內,縱使處理對象氣體F中的甲矽烷、TEOS、WF6等氧化而產生固態物的情況,也不用擔心該固態物會堵住氧化性氣體A的供應路徑。因此,可減輕維修的負擔,能使氣體處理裝置10進行長時間連續運轉。 Further, since it is configured such that the oxidizing gas A passes through the water tank 18 The water W is introduced into the reactor 12, that is, the structure in which the front end of the pipe for supplying the oxidizing gas A is disposed in the water W in the water tank 18, for example, in the reactor 12, even in the gas to be treated F, When TEOS, WF6, etc. are oxidized to produce a solid matter, there is no fear that the solid matter will block the supply path of the oxidizing gas A. Therefore, the burden of maintenance can be reduced, and the gas processing apparatus 10 can be continuously operated for a long time.
又在上述實施例,作為大氣壓電漿P雖例示出使用熱電漿的情況,但作為該大氣壓電漿P也能使用微波電漿、火焰。 Further, in the above embodiment, the case of using the thermoelectric plasma as the atmospheric piezoelectric slurry P is exemplified, but the microwave piezoelectric slurry and the flame can also be used as the atmospheric piezoelectric slurry P.
此外,在上述實施例雖例示出,讓反應器12的下端部沒入水槽18的水W中,有別於下端開口12b而在反應器12的下部側面設置排出口12a的情況,但亦可將反應器12的下端部配置於水面上,讓下端開口12b成為排出口12a。但在此情況,雖能使反應器12構造變簡單,但可燃性氣體和氧化性氣體A之接觸機率有若干降低之虞。 Further, in the above-described embodiment, the case where the lower end portion of the reactor 12 is immersed in the water W of the water tank 18 is different from the lower end opening 12b, and the discharge port 12a is provided on the lower side surface of the reactor 12, but it may be The lower end portion of the reactor 12 is placed on the water surface, and the lower end opening 12b is the discharge port 12a. However, in this case, although the structure of the reactor 12 can be made simple, the contact probability of the flammable gas and the oxidizing gas A is somewhat lowered.
而且,本發明之氣體處理裝置,並不限定於來自半導體製程之處理對象氣體F,也能適用於來自LCD製程、MEMS製造過程之處理對象氣體F及冷媒用氟氯碳化物之分解處理等。 Further, the gas processing apparatus of the present invention is not limited to the processing target gas F from the semiconductor manufacturing process, and can be applied to decomposition processing of the processing target gas F from the LCD manufacturing process and the MEMS manufacturing process, and the chlorofluorocarbon for the refrigerant.
10‧‧‧氣體處理裝置 10‧‧‧ gas treatment unit
12‧‧‧反應器 12‧‧‧Reactor
12a‧‧‧排出口 12a‧‧‧Export
12b‧‧‧下端開口 12b‧‧‧Bottom opening
14‧‧‧電漿產生裝置 14‧‧‧Plastic generating device
16‧‧‧水供應手段 16‧‧‧Water supply means
18‧‧‧水槽 18‧‧‧Sink
20‧‧‧氧化性氣體供應手段 20‧‧‧Oxidizing gas supply means
22‧‧‧後段濕式洗淨器 22‧‧‧After wet scrubber
28‧‧‧入口埠 28‧‧‧Entry埠
30‧‧‧入口導管 30‧‧‧Inlet catheter
46‧‧‧排氣風扇 46‧‧‧Exhaust fan
48‧‧‧排氣導管 48‧‧‧Exhaust duct
50‧‧‧旁通配管 50‧‧‧Bypass piping
52‧‧‧通氣閥 52‧‧‧Ventilation valve
54‧‧‧大氣導入配管 54‧‧‧Atmospheric introduction piping
56‧‧‧旁通閥 56‧‧‧ Bypass valve
P‧‧‧大氣壓電漿 P‧‧‧Atmospheric piezoelectric slurry
F‧‧‧處理對象氣體 F‧‧‧Processing gas
G‧‧‧排氣 G‧‧‧Exhaust
A‧‧‧氧化性氣體 A‧‧‧Oxidizing gas
第1圖顯示本發明的一實施例之氣體處理裝置的概略之構造圖。 Fig. 1 is a view showing the schematic configuration of a gas treatment device according to an embodiment of the present invention.
第2圖顯示水槽內所配置的反應器之內筒下部周邊構 造之說明圖。 Figure 2 shows the lower peripheral structure of the inner cylinder of the reactor disposed in the water tank. Create an illustration.
10‧‧‧氣體處理裝置 10‧‧‧ gas treatment unit
12‧‧‧反應器 12‧‧‧Reactor
12a‧‧‧排出口 12a‧‧‧Export
12b‧‧‧下端開口 12b‧‧‧Bottom opening
12x‧‧‧外筒 12x‧‧‧Outer tube
12y‧‧‧內筒 12y‧‧‧ inner tube
14‧‧‧電漿產生裝置 14‧‧‧Plastic generating device
14a‧‧‧電漿炬 14a‧‧‧Electric torch
16‧‧‧水供應手段 16‧‧‧Water supply means
18‧‧‧水槽 18‧‧‧Sink
18a‧‧‧冷卻器 18a‧‧‧cooler
20‧‧‧氧化性氣體供應手段 20‧‧‧Oxidizing gas supply means
22‧‧‧後段濕式洗淨器 22‧‧‧After wet scrubber
22a‧‧‧洗淨器本體 22a‧‧‧Washer body
22b、22c‧‧‧噴嘴 22b, 22c‧‧‧ nozzle
22d‧‧‧噴霧捕集分離器 22d‧‧‧Spray capture separator
24‧‧‧水貯留部 24‧‧‧Water Storage Department
26‧‧‧電漿噴射孔 26‧‧‧Plastic injection hole
28‧‧‧入口埠 28‧‧‧Entry埠
30‧‧‧入口導管 30‧‧‧Inlet catheter
32‧‧‧水供應配管 32‧‧‧Water Supply Piping
32a‧‧‧歧管 32a‧‧‧Management
32b‧‧‧噴嘴 32b‧‧‧Nozzles
34‧‧‧泵 34‧‧‧ pump
36‧‧‧氧化性氣體供應配管 36‧‧‧Oxidizing gas supply piping
38‧‧‧吹送機 38‧‧‧Blowing machine
40‧‧‧流量計 40‧‧‧ Flowmeter
42‧‧‧閥 42‧‧‧Valve
44‧‧‧起泡器 44‧‧‧ Bubbler
46‧‧‧排氣風扇 46‧‧‧Exhaust fan
48‧‧‧排氣導管 48‧‧‧Exhaust duct
50‧‧‧旁通配管 50‧‧‧Bypass piping
52‧‧‧通氣閥 52‧‧‧Ventilation valve
54‧‧‧大氣導入配管 54‧‧‧Atmospheric introduction piping
56‧‧‧旁通閥 56‧‧‧ Bypass valve
A‧‧‧氧化性氣體 A‧‧‧Oxidizing gas
C‧‧‧冷卻水 C‧‧‧Cooling water
F‧‧‧處理對象氣體 F‧‧‧Processing gas
G‧‧‧排氣 G‧‧‧Exhaust
P‧‧‧大氣壓電漿 P‧‧‧Atmospheric piezoelectric slurry
W‧‧‧水 W‧‧‧Water
NW‧‧‧新水 NW‧‧New Water
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WO2018221067A1 (en) * | 2017-05-29 | 2018-12-06 | カンケンテクノ株式会社 | Exhaust gas decompression detoxification method and device therefor |
KR101984814B1 (en) * | 2017-08-31 | 2019-05-31 | 주식회사 에코에너젠 | Treatment system for process exhaust stream containing isopropyl alcohol |
KR102362761B1 (en) * | 2017-11-22 | 2022-02-15 | 씨에스케이(주) | Gas treating apparatus |
CN109028102A (en) * | 2018-06-27 | 2018-12-18 | 德淮半导体有限公司 | The burner and its application method of gas |
JP6950881B2 (en) * | 2018-11-06 | 2021-10-13 | カンケンテクノ株式会社 | Exhaust gas introduction nozzle, water treatment device and exhaust gas treatment device |
CN109821373B (en) * | 2019-03-11 | 2020-09-01 | 中南大学 | Plasma waste gas treatment device and method |
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US6409802B1 (en) * | 1997-11-10 | 2002-06-25 | Ebara Corporation | Method for preventing scaling in wet-process waste gas treatment equipment |
TW200900135A (en) * | 2007-01-30 | 2009-01-01 | Kanken Techno Co Ltd | Gas processing apparatus |
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