TWI581454B - 半導體發光元件 - Google Patents
半導體發光元件 Download PDFInfo
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- TWI581454B TWI581454B TW105100093A TW105100093A TWI581454B TW I581454 B TWI581454 B TW I581454B TW 105100093 A TW105100093 A TW 105100093A TW 105100093 A TW105100093 A TW 105100093A TW I581454 B TWI581454 B TW I581454B
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- 239000004065 semiconductor Substances 0.000 title claims description 150
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 38
- 229910052799 carbon Inorganic materials 0.000 claims description 38
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 125000004429 atom Chemical group 0.000 description 20
- 229910002601 GaN Inorganic materials 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- RQMIWLMVTCKXAQ-UHFFFAOYSA-N [AlH3].[C] Chemical compound [AlH3].[C] RQMIWLMVTCKXAQ-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Description
本發明是有關於一種發光元件,且特別是有關於一種半導體發光元件。
隨著光電技術的演進,傳統的白熾燈泡與螢光燈管已逐漸被新一代的固態光源例如是發光二極體(light-emitting diode, LED)所取代,其具有諸如壽命長、體積小、高抗震性、高光效率及低功率消耗等優點,因此已經廣泛在家用照明及各種設備中作為光源使用。除了液晶顯示器的背光模組與家用照明燈具已廣泛採用發光二極體作為光源之外,近年來,發光二極體的應用領域已擴展至道路照明、大型戶外看板、交通號誌燈、UV固化及相關領域。發光二極體已經成為發展兼具省電及環保功能之光源的主要項目之一。
在一般的藍光或紫外光發光二極體晶片的磊晶製程中,容易在半導體層中產生碳雜質。然而,半導體層中濃度過高的碳容易對紫外光產生吸收,進而影響了紫外光的發光效率。
本發明提供一種半導體發光元件,其具有較理想的碳鋁濃度比。
本發明的一實施例的一種半導體發光元件包括至少一N型半導體層、至少一P型半導體層及一發光層。發光層配置於至少一P型半導體層與至少一N型半導體層之間。其中,在半導體發光元件中之有含鋁的任一半導體層中的碳濃度與鋁濃度的比值是落在10
-4至10
-2的範圍內。
在本發明的一實施例中,在半導體發光元件中之每一半導體層均含鋁。
在本發明的一實施例中,每一半導體層中鋁濃度是落在5×10
19原子數/立方公分至5×10
20原子數/立方公分的範圍內。
在本發明的一實施例中,此至少一P型半導體層中的碳濃度比氫濃度低。
在本發明的一實施例中,此至少一P型半導體層中的碳濃度比氧濃度低。
在本發明的一實施例中,此至少一P型半導體層中的碳濃度與氧濃度的比值大於等於0.5且小於1。
在本發明的一實施例中,在半導體發光元件中之每一半導體層的碳濃度小於等於5×10
18原子數/立方公分。
在本發明的一實施例中,半導體發光元件中之至少一P型半導體層的碳濃度是落在2×10
14原子數/立方公分至9×10
17原子數/立方公分的範圍內;至少一N型半導體層的碳濃度是落在10
14原子數/立方公分至10
17原子數/立方公分的範圍內。
在本發明的一實施例中,半導體發光元件中之至少一P型半導體層為多層P型半導體層,其中最靠近發光層的P型半導體層的碳濃度高於其他P型半導體層的碳濃度。
在本發明的一實施例中,發光層所發出的光為紫外光波段的光。
在本發明的實施例的半導體發光元件中,由於在半導體發光元件中之有含鋁的任一半導體層中的碳濃度與鋁濃度的比值是落在10
-4至10
-2的範圍內,因此半導體發光元件具有較理想的碳鋁濃度比,進而可以有效地提升半導體發光元件的發光效率。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
圖1為本發明的一實施例的半導體發光元件的剖面示意圖。請參照圖1,本實施例的半導體發光元件100包括至少一N型半導體層110(在圖1中是以一個N型半導體層110為例)、至少一P型半導體層120(在圖1中是以P型半導體層120a、120b及120c及電子阻擋層120”為例)及一發光層130。發光層130配置於P型半導體層120與N型半導體層110之間。在本實施例中,N型半導體層110的材質例如是氮化鋁鎵或氮化鎵,而P型半導體層120的材質例如是氮化鋁鎵或氮化鎵。在本實施例中,發光層130包括交替堆疊的多個能障層132與多個能井層134,亦即發光層130為多重量子井(multiple quantum well)結構。在本實施例中,能障層132與能井層134二者的材質可為不同的組成元素,亦可為相同的組成元素,但不同的元素比例,僅能障層132的能隙大於能井層134的能隙即可,能障層132的材質例如為氮化鎵、氮化鋁銦鎵或氮化鋁鎵,而能井層134的材質例如為氮化鎵、氮化鋁鎵、氮化銦鎵或氮化鋁銦鎵。
在本實施例中,半導體發光元件100更包括一應變釋放層(strain relief layer)140及電子阻擋層120”。應變釋放層140配置於N型半導體層110與發光層130之間,以釋放N型半導體層110在磊晶過程中所產生的應變,進而使成長於應變釋放層140上的發光層130能有更好的磊晶品質。在本實施例中,應變釋放層140例如是交替堆疊的多層氮化鋁鎵與多層氮化鋁銦鎵所形成超晶格層,但本發明不以此為限。電子阻擋層120”配置於發光層130與P型半導體層120a、120b及120c之間,以使電子盡量保持在發光層130內與電洞復合而發光,以提升發光效率。在本實施例中,電子阻擋層120”的材質例如為氮化鋁鎵,但本發明不以此為限。
在本實施例中,半導體發光元件100更包括一基板170一未刻意摻雜半導體層180、一第一電極150及一第二電極160。未刻意摻雜半導體層180形成於基板170上,而其上再依序形成N型半導體層110、應變釋放層140、發光層130、電子阻擋層120”及P型半導體層120a、120b及120c。此外,第一電極150形成於N型半導體層110上,且與N型半導體層110電性連接。第二電極160形成於P型半導體層120上,且與P型半導體層120電性連接。在本實施例中,基板170例如為藍寶石基板,但本發明不以此為限。此外,未刻意摻雜半導體層180的材質例如為未刻意摻雜氮化鋁鎵,但本發明不以此為限。
在本實施例中,在半導體發光元件100中之有含鋁的任一半導體層(包括未刻意摻雜半導體層180、N型半導體層110、應變釋放層140、發光層130、電子阻擋層120”及P型半導體層120a、120b及120c或再加上其他未繪示的半導體層中有含鋁的任一半導體層)中的碳濃度與鋁濃度的比值是落在10
-4至10
-2的範圍內,其中碳濃度與鋁濃度的單位為原子/立方公分,也就是每立方公分的體積內有多少原子(例如碳原子或鋁原子)。
在本實施例的半導體發光元件100中,由於在半導體發光元件100中之有含鋁的任一半導體層中的碳濃度與鋁濃度的比值是落在10
-4至10
-2的範圍內,因此半導體發光元件100具有較理想的碳鋁濃度比,進而可以有效地提升半導體發光元件100的發光效率。
在本實施例中,在半導體發光元件100中之每一半導體層均含鋁,而此每一半導體層中鋁濃度例如是落在5×10
19原子數/立方公分至5×10
20原子數/立方公分的範圍內。在本實施例中,此至少一P型半導體層120(在圖1中即為電子阻擋層120”與P型半導體層120a、120b及120c中的每一層,亦即發光層130以上的每一P型半導體層120)中的碳濃度比氫濃度低。此外,在本實施例中,此至少一P型半導體層120中的碳濃度比氧濃度低。具體而言,在一實施例中,此至少一P型半導體層120中的碳濃度與氧濃度的比值大於等於0.5且小於1。換言之,在發光層130以上的每一P型半導體層120中的碳濃度是比較低的,這可利用將金屬有機化學氣相沉積法(metal organic chemical vapor deposition, MOCVD)中的鎵材料源從三甲基鎵(trimethyl gallium, TMGa)置換為三乙基鎵(triethyl gallium, TEGa)來達成,或者是藉由提高MOCVD的製程溫度來達成。
在一實施例中,在半導體發光元件100中之每一半導體層的碳濃度小於等於5×10
18原子數/立方公分,較佳地,在半導體發光元件100中之每一半導體層的碳濃度小於等於5×10
17原子數/立方公分。在一實施例中,半導體發光元件100中之至少一P型半導體層120的碳濃度是落在2×10
14原子數/立方公分至9×10
17原子數/立方公分的範圍內,較佳地,半導體發光元件100中之至少一P型半導體層120的碳濃度是落在2×10
15原子數/立方公分至5×10
17原子數/立方公分的範圍內;至少一N型半導體層110的碳濃度是落在10
14原子數/立方公分至10
17原子數/立方公分的範圍內,較佳地,至少一N型半導體層110的碳濃度是落在10
15原子數/立方公分至9×10
16原子數/立方公分的範圍內。在一實施例中,半導體發光元件100中之至少一P型半導體層120為多層P型半導體層120,其中最靠近發光層130的P型半導體層120(例如電子阻擋層120”)的碳濃度高於其他P型半導體層120(例如P型半導體層120ba、120b與120c)的碳濃度。
此外,在本實施例中,發光層130所發出的光為紫外光波段的光(例如是波長小於410奈米的光),而半導體發光元件100中的碳濃度較小,較不會吸收紫外光,這是因為碳會在磊晶晶格內產生缺陷,而此缺陷可吸收波長為410奈米以下的光。因此,半導體發光元件100可具有較佳的發光效率。然而,在其他實施例中,發光層130所發出的光亦可以是藍光或綠光。
本實施例的半導體發光元件100例如為一水平式發光二極體,其第一電極150與第二電極160均位於半導體發光元件100的同一側。
圖2為本發明的另一實施例的半導體發光元件的剖面示意圖。請參照圖2,本實施例的半導體發光元件100a與圖1之半導體發光元件100類似,而兩者的差異在於本實施例的半導體發光元件100a例如為一垂直式發光二極體,其第一電極150a與第二電極160分別位於半導體發光元件100a的相對兩側。具體而言,第一電極150a可為配置於N型半導體層110下方的導電膜層,且與N型半導體層110電性連接。在本實施例中,第一電極150a直接配置於N型半導體層110的下表面上,然而,在其他實施例中,第一電極150a與N型半導體層110之間亦可藉由導電基板來連接。
綜上所述,在本發明的實施例的半導體發光元件中,由於在半導體發光元件中之有含鋁的任一半導體層中的碳濃度與鋁濃度的比值是落在10
-4至10
-2的範圍內,因此半導體發光元件具有較理想的碳鋁濃度比,進而可以有效地提升半導體發光元件的發光效率。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100、100a‧‧‧半導體發光元件
110‧‧‧N型半導體層
120、120a、120b、120c‧‧‧P型半導體層
120”‧‧‧電子阻擋層
130‧‧‧發光層
132‧‧‧能障層
134‧‧‧能井層
140‧‧‧應變釋放層
150、150a‧‧‧第一電極
160‧‧‧第二電極
170‧‧‧基板
180‧‧‧未刻意摻雜半導體層
圖1為本發明的一實施例的半導體發光元件的剖面示意圖。 圖2為本發明的另一實施例的半導體發光元件的剖面示意圖。
100‧‧‧半導體發光元件
110‧‧‧N型半導體層
120、120a、120b、120c‧‧‧P型半導體層
120”‧‧‧電子阻擋層
130‧‧‧發光層
132‧‧‧能障層
134‧‧‧能井層
140‧‧‧應變釋放層
150‧‧‧第一電極
160‧‧‧第二電極
170‧‧‧基板
180‧‧‧未刻意摻雜半導體層
Claims (9)
- 一種半導體發光元件,包括:至少一N型半導體層;至少一P型半導體層;以及一發光層,配置於該至少一P型半導體層與該至少一N型半導體層之間,該發光層所發出的光為紫外光波段的光,其中,在該半導體發光元件中之有含鋁的任一半導體層中的碳濃度與鋁濃度的比值是落在10-4至10-2的範圍內。
- 如申請專利範圍第1項所述的半導體發光元件,其中在該半導體發光元件中之每一半導體層均含鋁。
- 如申請專利範圍第2項所述的半導體發光元件,其中該每一半導體層中鋁濃度是落在5×1019原子數/立方公分至5×1020原子數/立方公分的範圍內。
- 如申請專利範圍第2項所述的半導體發光元件,其中該至少一P型半導體層中的碳濃度比氫濃度低。
- 如申請專利範圍第2項所述的半導體發光元件,其中該至少一P型半導體層中的碳濃度比氧濃度低。
- 如申請專利範圍第5項所述的半導體發光元件,其中該至少一P型半導體層中的碳濃度與氧濃度的比值大於等於0.5且小於1。
- 如申請專利範圍第1項所述的半導體發光元件,其中在該半導體發光元件中之每一半導體層的碳濃度小於等於5×1018原子數/立方公分。
- 如申請專利範圍第7項所述的半導體發光元件,其中該半導體發光元件中之至少一P型半導體層的碳濃度是落在2×1014原子數/立方公分至9×1017原子數/立方公分的範圍內;至少一N型半導體層的碳濃度是落在1014原子數/立方公分至1017原子數/立方公分的範圍內。
- 如申請專利範圍第1項所述的半導體發光元件,其中該半導體發光元件中之至少一P型半導體層為多層P型半導體層,其中最靠近該發光層的P型半導體層的碳濃度高於其他P型半導體層的碳濃度。
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