TWI571528B - And a method and apparatus for controlling the surface temperature of the base body of the substrate coating apparatus - Google Patents
And a method and apparatus for controlling the surface temperature of the base body of the substrate coating apparatus Download PDFInfo
- Publication number
- TWI571528B TWI571528B TW102107233A TW102107233A TWI571528B TW I571528 B TWI571528 B TW I571528B TW 102107233 A TW102107233 A TW 102107233A TW 102107233 A TW102107233 A TW 102107233A TW I571528 B TWI571528 B TW I571528B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- control
- substrate
- processing chamber
- sensors
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
- G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
- G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Automation & Control Theory (AREA)
- Remote Sensing (AREA)
- Chemical Vapour Deposition (AREA)
- Control Of Resistance Heating (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012101717A DE102012101717A1 (de) | 2012-03-01 | 2012-03-01 | Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201346061A TW201346061A (zh) | 2013-11-16 |
TWI571528B true TWI571528B (zh) | 2017-02-21 |
Family
ID=47891615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102107233A TWI571528B (zh) | 2012-03-01 | 2013-03-01 | And a method and apparatus for controlling the surface temperature of the base body of the substrate coating apparatus |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN104204291B (de) |
DE (2) | DE102012101717A1 (de) |
TW (1) | TWI571528B (de) |
WO (1) | WO2013127891A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013109155A1 (de) | 2013-08-23 | 2015-02-26 | Aixtron Se | Substratbehandlungsvorrichtung |
DE102013114412A1 (de) * | 2013-12-18 | 2015-06-18 | Aixtron Se | Vorrichtung und Verfahren zur Regelung der Temperatur in einer Prozesskammer eines CVD-Reaktors unter Verwendung zweier Temperatursensoreinrichtungen |
US9543171B2 (en) * | 2014-06-17 | 2017-01-10 | Lam Research Corporation | Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element |
DE102014117388A1 (de) | 2014-11-27 | 2016-06-02 | Aixtron Se | Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors |
CN104635792B (zh) * | 2015-01-09 | 2017-10-27 | 中国科学院工程热物理研究所 | 基于主动温度梯度法控制表面张力驱动对流的方法 |
DE102015100640A1 (de) * | 2015-01-19 | 2016-07-21 | Aixtron Se | Vorrichtung und Verfahren zum thermischen Behandeln von Substraten |
CN105390421A (zh) * | 2015-10-14 | 2016-03-09 | 上海华力微电子有限公司 | 一种反应室温度分区控制*** |
DE102017105333A1 (de) * | 2017-03-14 | 2018-09-20 | Aixtron Se | Verfahren und Vorrichtung zur thermischen Behandlung eines Substrates |
TWI837773B (zh) * | 2017-06-28 | 2024-04-01 | 日商東京威力科創股份有限公司 | 熱處理裝置之狀態監視裝置、熱處理裝置之管理方法及記錄媒體 |
JP7003759B2 (ja) * | 2017-06-28 | 2022-01-21 | 東京エレクトロン株式会社 | 熱処理装置、熱処理装置の管理方法及び記憶媒体 |
DE102018121854A1 (de) * | 2018-09-07 | 2020-03-12 | Aixtron Se | Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors |
DE102019107295A1 (de) * | 2019-03-21 | 2020-09-24 | Aixtron Se | Verfahren zur Erfassung eines Zustandes eines CVD-Reaktors unter Produktionsbedingungen |
DE102020100481A1 (de) * | 2020-01-10 | 2021-07-15 | Aixtron Se | CVD-Reaktor und Verfahren zur Regelung der Oberflächentemperatur der Substrate |
CN113846376B (zh) * | 2021-09-23 | 2022-12-27 | 浙江晶盛机电股份有限公司 | 外延生长装置的调温方法以及外延生长装置 |
CN113862647A (zh) * | 2021-09-28 | 2021-12-31 | 长江存储科技有限责任公司 | 一种薄膜沉积设备及方法 |
WO2023198804A1 (de) | 2022-04-14 | 2023-10-19 | Hte Gmbh The High Throughput Experimentation Company | Vorrichtung zur wärmebehandlung |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1760774A (zh) * | 2004-10-13 | 2006-04-19 | 欧姆龙株式会社 | 控制方法、温度控制方法、温度调节器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5549756A (en) * | 1994-02-02 | 1996-08-27 | Applied Materials, Inc. | Optical pyrometer for a thin film deposition system |
US5871805A (en) * | 1996-04-08 | 1999-02-16 | Lemelson; Jerome | Computer controlled vapor deposition processes |
US6079874A (en) * | 1998-02-05 | 2000-06-27 | Applied Materials, Inc. | Temperature probes for measuring substrate temperature |
US5970214A (en) * | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
US6034357A (en) * | 1998-06-08 | 2000-03-07 | Steag Rtp Systems Inc | Apparatus and process for measuring the temperature of semiconductor wafers in the presence of radiation absorbing gases |
US6706541B1 (en) * | 1999-10-20 | 2004-03-16 | Advanced Micro Devices, Inc. | Method and apparatus for controlling wafer uniformity using spatially resolved sensors |
AU2001251216A1 (en) * | 2000-03-30 | 2001-10-15 | Tokyo Electron Limited | Optical monitoring and control system and method for plasma reactors |
US6492625B1 (en) | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
DE10207461A1 (de) | 2002-02-22 | 2003-09-04 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden von mehrkomponentigen Halbleiterschichten auf mindestens einem Substrat |
US20040222210A1 (en) * | 2003-05-08 | 2004-11-11 | Hongy Lin | Multi-zone ceramic heating system and method of manufacture thereof |
DE102004007984A1 (de) | 2004-02-18 | 2005-09-01 | Aixtron Ag | CVD-Reaktor mit Fotodioden-Array |
US20060027169A1 (en) * | 2004-08-06 | 2006-02-09 | Tokyo Electron Limited | Method and system for substrate temperature profile control |
DE102007023970A1 (de) | 2007-05-23 | 2008-12-04 | Aixtron Ag | Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate |
-
2012
- 2012-03-01 DE DE102012101717A patent/DE102012101717A1/de not_active Withdrawn
-
2013
- 2013-02-28 CN CN201380012023.8A patent/CN104204291B/zh active Active
- 2013-02-28 DE DE112013001238.3T patent/DE112013001238A5/de active Pending
- 2013-02-28 WO PCT/EP2013/053986 patent/WO2013127891A1/de active Application Filing
- 2013-03-01 TW TW102107233A patent/TWI571528B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1760774A (zh) * | 2004-10-13 | 2006-04-19 | 欧姆龙株式会社 | 控制方法、温度控制方法、温度调节器 |
Also Published As
Publication number | Publication date |
---|---|
DE112013001238A5 (de) | 2015-01-15 |
WO2013127891A1 (de) | 2013-09-06 |
CN104204291B (zh) | 2017-12-05 |
DE102012101717A1 (de) | 2013-09-05 |
TW201346061A (zh) | 2013-11-16 |
CN104204291A (zh) | 2014-12-10 |
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