TWI571528B - And a method and apparatus for controlling the surface temperature of the base body of the substrate coating apparatus - Google Patents

And a method and apparatus for controlling the surface temperature of the base body of the substrate coating apparatus Download PDF

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Publication number
TWI571528B
TWI571528B TW102107233A TW102107233A TWI571528B TW I571528 B TWI571528 B TW I571528B TW 102107233 A TW102107233 A TW 102107233A TW 102107233 A TW102107233 A TW 102107233A TW I571528 B TWI571528 B TW I571528B
Authority
TW
Taiwan
Prior art keywords
temperature
control
substrate
processing chamber
sensors
Prior art date
Application number
TW102107233A
Other languages
English (en)
Chinese (zh)
Other versions
TW201346061A (zh
Inventor
Ralf Leiers
Markus Luenenbuerger
Gerhard Karl Strauch
Bernd Schineller
Karl-Heinz Buechel
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Publication of TW201346061A publication Critical patent/TW201346061A/zh
Application granted granted Critical
Publication of TWI571528B publication Critical patent/TWI571528B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Remote Sensing (AREA)
  • Chemical Vapour Deposition (AREA)
  • Control Of Resistance Heating (AREA)
TW102107233A 2012-03-01 2013-03-01 And a method and apparatus for controlling the surface temperature of the base body of the substrate coating apparatus TWI571528B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012101717A DE102012101717A1 (de) 2012-03-01 2012-03-01 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung

Publications (2)

Publication Number Publication Date
TW201346061A TW201346061A (zh) 2013-11-16
TWI571528B true TWI571528B (zh) 2017-02-21

Family

ID=47891615

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102107233A TWI571528B (zh) 2012-03-01 2013-03-01 And a method and apparatus for controlling the surface temperature of the base body of the substrate coating apparatus

Country Status (4)

Country Link
CN (1) CN104204291B (de)
DE (2) DE102012101717A1 (de)
TW (1) TWI571528B (de)
WO (1) WO2013127891A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013109155A1 (de) 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
DE102013114412A1 (de) * 2013-12-18 2015-06-18 Aixtron Se Vorrichtung und Verfahren zur Regelung der Temperatur in einer Prozesskammer eines CVD-Reaktors unter Verwendung zweier Temperatursensoreinrichtungen
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
DE102014117388A1 (de) 2014-11-27 2016-06-02 Aixtron Se Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors
CN104635792B (zh) * 2015-01-09 2017-10-27 中国科学院工程热物理研究所 基于主动温度梯度法控制表面张力驱动对流的方法
DE102015100640A1 (de) * 2015-01-19 2016-07-21 Aixtron Se Vorrichtung und Verfahren zum thermischen Behandeln von Substraten
CN105390421A (zh) * 2015-10-14 2016-03-09 上海华力微电子有限公司 一种反应室温度分区控制***
DE102017105333A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Verfahren und Vorrichtung zur thermischen Behandlung eines Substrates
TWI837773B (zh) * 2017-06-28 2024-04-01 日商東京威力科創股份有限公司 熱處理裝置之狀態監視裝置、熱處理裝置之管理方法及記錄媒體
JP7003759B2 (ja) * 2017-06-28 2022-01-21 東京エレクトロン株式会社 熱処理装置、熱処理装置の管理方法及び記憶媒体
DE102018121854A1 (de) * 2018-09-07 2020-03-12 Aixtron Se Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors
DE102019107295A1 (de) * 2019-03-21 2020-09-24 Aixtron Se Verfahren zur Erfassung eines Zustandes eines CVD-Reaktors unter Produktionsbedingungen
DE102020100481A1 (de) * 2020-01-10 2021-07-15 Aixtron Se CVD-Reaktor und Verfahren zur Regelung der Oberflächentemperatur der Substrate
CN113846376B (zh) * 2021-09-23 2022-12-27 浙江晶盛机电股份有限公司 外延生长装置的调温方法以及外延生长装置
CN113862647A (zh) * 2021-09-28 2021-12-31 长江存储科技有限责任公司 一种薄膜沉积设备及方法
WO2023198804A1 (de) 2022-04-14 2023-10-19 Hte Gmbh The High Throughput Experimentation Company Vorrichtung zur wärmebehandlung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1760774A (zh) * 2004-10-13 2006-04-19 欧姆龙株式会社 控制方法、温度控制方法、温度调节器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5549756A (en) * 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US6079874A (en) * 1998-02-05 2000-06-27 Applied Materials, Inc. Temperature probes for measuring substrate temperature
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6034357A (en) * 1998-06-08 2000-03-07 Steag Rtp Systems Inc Apparatus and process for measuring the temperature of semiconductor wafers in the presence of radiation absorbing gases
US6706541B1 (en) * 1999-10-20 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors
AU2001251216A1 (en) * 2000-03-30 2001-10-15 Tokyo Electron Limited Optical monitoring and control system and method for plasma reactors
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
DE10207461A1 (de) 2002-02-22 2003-09-04 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von mehrkomponentigen Halbleiterschichten auf mindestens einem Substrat
US20040222210A1 (en) * 2003-05-08 2004-11-11 Hongy Lin Multi-zone ceramic heating system and method of manufacture thereof
DE102004007984A1 (de) 2004-02-18 2005-09-01 Aixtron Ag CVD-Reaktor mit Fotodioden-Array
US20060027169A1 (en) * 2004-08-06 2006-02-09 Tokyo Electron Limited Method and system for substrate temperature profile control
DE102007023970A1 (de) 2007-05-23 2008-12-04 Aixtron Ag Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1760774A (zh) * 2004-10-13 2006-04-19 欧姆龙株式会社 控制方法、温度控制方法、温度调节器

Also Published As

Publication number Publication date
DE112013001238A5 (de) 2015-01-15
WO2013127891A1 (de) 2013-09-06
CN104204291B (zh) 2017-12-05
DE102012101717A1 (de) 2013-09-05
TW201346061A (zh) 2013-11-16
CN104204291A (zh) 2014-12-10

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