TWI569090B - 相位移遮罩及使用該相位移遮罩之抗蝕劑圖案形成方法 - Google Patents

相位移遮罩及使用該相位移遮罩之抗蝕劑圖案形成方法 Download PDF

Info

Publication number
TWI569090B
TWI569090B TW102105517A TW102105517A TWI569090B TW I569090 B TWI569090 B TW I569090B TW 102105517 A TW102105517 A TW 102105517A TW 102105517 A TW102105517 A TW 102105517A TW I569090 B TWI569090 B TW I569090B
Authority
TW
Taiwan
Prior art keywords
phase
phase shift
size
shift mask
light
Prior art date
Application number
TW102105517A
Other languages
English (en)
Chinese (zh)
Other versions
TW201346430A (zh
Inventor
木下一樹
飛田敦
Original Assignee
大日本印刷股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大日本印刷股份有限公司 filed Critical 大日本印刷股份有限公司
Publication of TW201346430A publication Critical patent/TW201346430A/zh
Application granted granted Critical
Publication of TWI569090B publication Critical patent/TWI569090B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW102105517A 2012-02-15 2013-02-18 相位移遮罩及使用該相位移遮罩之抗蝕劑圖案形成方法 TWI569090B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012030953 2012-02-15

Publications (2)

Publication Number Publication Date
TW201346430A TW201346430A (zh) 2013-11-16
TWI569090B true TWI569090B (zh) 2017-02-01

Family

ID=48984329

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102105517A TWI569090B (zh) 2012-02-15 2013-02-18 相位移遮罩及使用該相位移遮罩之抗蝕劑圖案形成方法

Country Status (5)

Country Link
JP (1) JP6232709B2 (ja)
KR (1) KR101624435B1 (ja)
CN (3) CN109298591A (ja)
TW (1) TWI569090B (ja)
WO (1) WO2013122220A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6335735B2 (ja) * 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
EP3531206A1 (en) * 2018-02-23 2019-08-28 ASML Netherlands B.V. Systems and methods for improving resist model predictions
CN108508695B (zh) * 2018-03-09 2020-10-02 深圳市华星光电半导体显示技术有限公司 掩膜板、阵列基板、显示器及阵列基板的制备方法
CN110364638A (zh) * 2019-07-12 2019-10-22 昆山梦显电子科技有限公司 高分辨率Micro-OLED的制备方法以及显示模组

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001052984A (ja) * 1999-08-09 2001-02-23 Nikon Corp 周辺露光装置、周辺露光方法および露光システム
JP2006064968A (ja) * 2004-08-26 2006-03-09 Advanced Lcd Technologies Development Center Co Ltd 位相シフトマスク及びそれを用いた露光方法
TW200641557A (en) * 2005-05-16 2006-12-01 Taiwan Semiconductor Mfg Co Ltd A system and method for photolithography in semiconductor manufacturing
TW200921264A (en) * 2007-11-06 2009-05-16 Geomatec Co Ltd Substrate for photomask, photomask, and method for manufacturing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3416554B2 (ja) * 1999-02-02 2003-06-16 キヤノン株式会社 マスク構造体の製造方法
SG144749A1 (en) * 2002-03-25 2008-08-28 Asml Masktools Bv Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography
TWI274969B (en) * 2002-09-11 2007-03-01 Asml Masktools Bv Method and computer program product of generating masks and mask generated thereby, device manufacturing method and device manufactured thereby, and method of printing pattern
JP4619043B2 (ja) * 2004-06-02 2011-01-26 Ｈｏｙａ株式会社 位相シフトマスクの製造方法及びテンプレートの製造方法
US20070121090A1 (en) * 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4791198B2 (ja) * 2006-02-03 2011-10-12 パナソニック株式会社 フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法
JP5510947B2 (ja) * 2008-09-19 2014-06-04 Ｈｏｙａ株式会社 フォトマスクの製造方法およびフォトマスク
JP2010169750A (ja) * 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、及び表示デバイスの製造方法
JP2011013321A (ja) * 2009-06-30 2011-01-20 Hoya Corp フォトマスクブランクの製造方法、フォトマスクの製造方法及び塗布装置
JP5479074B2 (ja) * 2009-12-21 2014-04-23 Ｈｏｙａ株式会社 光学素子の製造方法、光学素子
JP2011002859A (ja) * 2010-10-04 2011-01-06 Hoya Corp 位相シフトマスクの製造方法及びテンプレートの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001052984A (ja) * 1999-08-09 2001-02-23 Nikon Corp 周辺露光装置、周辺露光方法および露光システム
JP2006064968A (ja) * 2004-08-26 2006-03-09 Advanced Lcd Technologies Development Center Co Ltd 位相シフトマスク及びそれを用いた露光方法
TW200641557A (en) * 2005-05-16 2006-12-01 Taiwan Semiconductor Mfg Co Ltd A system and method for photolithography in semiconductor manufacturing
TW200921264A (en) * 2007-11-06 2009-05-16 Geomatec Co Ltd Substrate for photomask, photomask, and method for manufacturing the same

Also Published As

Publication number Publication date
CN109298591A (zh) 2019-02-01
CN104040428A (zh) 2014-09-10
CN109298592A (zh) 2019-02-01
JP2013190786A (ja) 2013-09-26
KR101624435B1 (ko) 2016-05-25
WO2013122220A1 (ja) 2013-08-22
JP6232709B2 (ja) 2017-11-22
KR20140104433A (ko) 2014-08-28
CN104040428B (zh) 2018-11-13
TW201346430A (zh) 2013-11-16

Similar Documents

Publication Publication Date Title
TWI584058B (zh) 大型相位移遮罩及大型相位移遮罩之製造方法
KR101624436B1 (ko) 대형 위상 시프트 마스크 및 대형 위상 시프트 마스크의 제조 방법
TWI512410B (zh) 半色調光罩及其製造方法，以及採用該半色調光罩之平面顯示器
TWI604264B (zh) 光罩及顯示裝置之製造方法
JP2005037933A (ja) グレートーンマスクの製造方法及びグレートーンマスク
JP2008282046A (ja) グレートーンマスク及び薄膜トランジスタ基板の製造方法
JP2008180897A (ja) グレートーンマスク及びパターン転写方法
TWI569090B (zh) 相位移遮罩及使用該相位移遮罩之抗蝕劑圖案形成方法
TW201604643A (zh) 光罩、光罩之製造方法、光罩基底及顯示裝置之製造方法
TWI620001B (zh) Photomask and color filter manufacturing method
KR20110128753A (ko) 다계조 포토마스크의 제조 방법 및 패턴 전사 방법
JP2011081326A (ja) 多階調フォトマスクの製造方法及び多階調フォトマスク用ブランク、並びに電子デバイスの製造方法
JP2010276997A (ja) 露光用マスク及び半導体装置の製造方法
TWI711878B (zh) 大型光罩
JP5937873B2 (ja) フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法
JP2010175697A (ja) 濃度分布マスク
JP2009037203A (ja) パターン形成方法、薄膜トランジスタ基板の製造方法及び液晶表示装置の製造方法、並びにフォトマスク
CN113406857A (zh) 光掩模以及显示装置的制造方法
TW202132904A (zh) 光罩、光罩之製造方法及電子元件之製造方法
KR20100134448A (ko) 위상반전 마스크 및 그 제조방법
JP2011221227A (ja) フォトマスク