TWI566327B - Wafer supporting device - Google Patents
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- TWI566327B TWI566327B TW104140094A TW104140094A TWI566327B TW I566327 B TWI566327 B TW I566327B TW 104140094 A TW104140094 A TW 104140094A TW 104140094 A TW104140094 A TW 104140094A TW I566327 B TWI566327 B TW I566327B
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Description
本發明關於晶圓領域，特別是關於一種晶圓承載裝置。 The present invention relates to the field of wafers, and more particularly to a wafer carrier.
隨著科技的進步，對於晶圓厚度的要求越來越薄，因此需要背面研磨的製程。 As technology advances, wafer thickness requirements are becoming thinner and thinner, requiring backgrinding processes.
請參閱第1圖，第1圖顯示習知技術中背面研磨及背面研磨之後的製程。 Please refer to FIG. 1. FIG. 1 shows a process after back grinding and back grinding in the prior art.
於步驟S100中，對一晶圓進行針測(wafer probe)。於步驟S102中，對該晶圓進行植球。於步驟S104中，對該晶圓進行背面研磨。於步驟S106中，以紫外光照射20~30秒，移除晶圓上之錫球面的保護膠帶。於步驟S108中，對該晶圓進行固化。於步驟S110中，對該晶圓進行研磨面(即背面)上的微粒(particle)殘膠清洗或蝕刻。於步驟S112中，對該晶圓背面之薄膜進行雷射標識(laser marking)。於步驟S114中，再次進行晶圓針測(wafer probe)。於步驟S116中，對該晶圓進行清洗或蝕刻。於步驟S118中，貼上晶片背面保護膠帶(LC tape)並上框架(thin frame)。於步驟S120中，切割該晶圓以獲得晶粒。於步驟S122中，以紫外光照射20~30秒，移除晶片背面保護膠帶。於步驟S124中，傳送到測試分類(pick and place)站。於步驟S126中，檢驗各晶粒。於步驟S128中，選取並放置晶粒。於步驟S130中，將選取的晶粒傳送至吸取晶粒站(reel)。 In step S100, a wafer probe is performed on a wafer. In step S102, the wafer is implanted. In step S104, the wafer is back-polished. In step S106, the protective tape of the tin spherical surface on the wafer is removed by irradiating with ultraviolet light for 20 to 30 seconds. In step S108, the wafer is cured. In step S110, the wafer is cleaned or etched by particle residue on the polished surface (ie, the back surface). In step S112, the film on the back side of the wafer is subjected to laser marking. In step S114, a wafer probe is again performed. In step S116, the wafer is cleaned or etched. In step S118, a wafer back protective tape (LC tape) is attached and a thin frame is attached. In step S120, the wafer is diced to obtain a crystal grain. In step S122, the wafer back protective tape is removed by irradiating with ultraviolet light for 20 to 30 seconds. In step S124, it is transmitted to the pick and place station. In step S126, each crystal grain is inspected. In step S128, the crystal grains are selected and placed. In step S130, the selected die is transferred to a pickup die station (reel).
在上述步驟S110及S116中，需要對晶圓進行清洗，然而由於晶圓厚度越來越薄，因此在清洗過程中容易造成晶圓破裂的情況發生。 此外，習知技術中，採用吸盤吸住晶圓或用頂針承載晶圓，在清洗過程中也容易造成晶圓破裂的情況發生。 In the above steps S110 and S116, the wafer needs to be cleaned. However, since the thickness of the wafer is thinner, the wafer is easily broken during the cleaning process. In addition, in the prior art, the suction pad is used to suck the wafer or the wafer is carried by the ejector pin, and the wafer is easily broken during the cleaning process.
此外，在對晶圓進行研磨面上的微粒及殘膠清洗或蝕刻製程中，所噴灑的液體或清水容易流至不需要清洗或蝕刻的表面，造成不需要清洗或蝕刻的表面受到侵蝕甚至破壞線路。 In addition, in the cleaning and etching process of the particles and the residual glue on the polished surface of the wafer, the sprayed liquid or clean water easily flows to the surface that does not need to be cleaned or etched, causing the surface that does not need to be cleaned or etched to be eroded or destroyed. line.
因此需要針對習知技術中晶圓容易破裂以及不需要清洗或蝕刻的表面受到破壞的問題提出解決方法。 Therefore, it is necessary to propose a solution to the problem that the wafer in the prior art is easily broken and the surface that does not need to be cleaned or etched is damaged.
本發明提供一種晶圓承載裝置，其能解決習知技術中晶圓容易破裂以及不需要清洗或蝕刻的表面受到破壞的問題。 The present invention provides a wafer carrier device that solves the problem of the prior art that the wafer is easily broken and the surface that does not need to be cleaned or etched is damaged.
本發明之晶圓承載裝置用於承載一晶圓，該晶圓承載裝置包括一基座以及一承載盤。該承載盤固定於該基座上並包括一底盤、一出氣盤、以及複數個限位單元。該底盤包括複數個連接部，各連接部包括複數個氣孔。該出氣盤設置於該底盤上且包括複數個多孔性薄膜。該等限位單元固定在該底盤之周圍。 The wafer carrier of the present invention is used to carry a wafer, and the wafer carrier includes a base and a carrier. The carrier tray is fixed on the base and includes a chassis, an air outlet disk, and a plurality of limiting units. The chassis includes a plurality of connecting portions, each connecting portion including a plurality of air holes. The air outlet tray is disposed on the chassis and includes a plurality of porous films. The limit units are fixed around the chassis.
在一較佳實施例中，該基座具有一進氣部，該進氣部用於提供使該晶圓漂浮至一特定位置之氣壓。 In a preferred embodiment, the base has an air inlet for providing a gas pressure that floats the wafer to a particular location.
在一較佳實施例中，該晶圓漂浮至該特定位置時，該等限位單元夾持住該晶圓並帶動該晶圓旋轉。 In a preferred embodiment, when the wafer floats to the specific position, the limiting unit clamps the wafer and drives the wafer to rotate.
在一較佳實施例中，該特定位置為該出氣盤上方0.5毫米至10毫米之間。 In a preferred embodiment, the particular location is between 0.5 mm and 10 mm above the venting disk.
在一較佳實施例中，該等多孔性薄膜的位置對應至該等氣孔的位置。 In a preferred embodiment, the positions of the porous films correspond to the locations of the pores.
在一較佳實施例中，該等多孔性薄膜的孔徑為0.1至0.5微米，該等多孔性薄膜的厚度為1至5毫米。 In a preferred embodiment, the porous films have a pore diameter of 0.1 to 0.5 μm, and the porous films have a thickness of 1 to 5 mm.
在一較佳實施例中，該等連接部被設置成同心圓的形狀，且相同圈之連接部被分離成複數個部分。 In a preferred embodiment, the connecting portions are arranged in a concentric shape, and the connecting portions of the same ring are separated into a plurality of portions.
在一較佳實施例中，該等多孔性薄膜被設置成同心圓的形狀，且相同圈之多孔性薄膜被分離成複數個部分。 In a preferred embodiment, the porous films are arranged in a concentric shape, and the porous film of the same circle is separated into a plurality of portions.
在一較佳實施例中，該出氣盤進一步包括複數個鎖固件，該等鎖固件用於鎖固在該底盤上。 In a preferred embodiment, the air outlet tray further includes a plurality of fasteners for locking to the chassis.
在一較佳實施例中，各限位單元包括一固定部以及一可移動部。該固定部呈倒L形狀並用於固定在該出氣盤上。該可移動部嵌入於該固定部之一垂直邊中。 In a preferred embodiment, each of the limiting units includes a fixed portion and a movable portion. The fixing portion has an inverted L shape and is fixed to the air outlet tray. The movable portion is embedded in one of the vertical sides of the fixing portion.
在一較佳實施例中，該可移動部包括一扣件部，該可移動部可朝向該固定部之一水平邊的方向傾斜，並帶動該扣件部朝向該固定部之該水平邊的方向傾斜。 In a preferred embodiment, the movable portion includes a fastener portion that is tiltable toward a horizontal side of the fixing portion and drives the fastener portion toward the horizontal side of the fixing portion. Tilt in direction.
本發明之晶圓承載裝置採用之多孔性薄膜能提供均勻的氣壓給晶圓，使得晶圓不會有破裂的情況發生。再者，本發明之晶圓承載裝置採用限位單元帶動晶圓旋轉，在清洗或蝕刻時所噴灑的化學藥劑、氮氣、或清水不會流至該晶圓不需要清洗或蝕刻的表面，因此不會破壞不需要清洗或蝕刻的表面上的線路。 The porous film used in the wafer carrying device of the present invention can provide uniform gas pressure to the wafer so that the wafer does not break. Furthermore, the wafer carrying device of the present invention uses a limiting unit to drive the wafer to rotate, and the chemical, nitrogen, or clean water sprayed during cleaning or etching does not flow to the surface of the wafer that does not need to be cleaned or etched. It does not break the lines on the surface that do not need to be cleaned or etched.
2‧‧‧晶圓承載裝置 2‧‧‧ wafer carrier
20‧‧‧基座 20‧‧‧ Pedestal
22‧‧‧承載盤 22‧‧‧ Carrying tray
24‧‧‧進氣部 24‧‧‧Intake Department
30‧‧‧晶圓 30‧‧‧ Wafer
220‧‧‧底盤 220‧‧‧Chassis
222‧‧‧出氣盤 222‧‧‧Exhaust disk
224‧‧‧限位單元 224‧‧‧Limited unit
300‧‧‧正面 300‧‧‧ positive
302‧‧‧背面 302‧‧‧Back
2200‧‧‧連接部 2200‧‧‧Connecting Department
2202‧‧‧氣孔 2202‧‧‧ stomata
2220‧‧‧多孔性薄膜 2220‧‧‧Porous film
2222‧‧‧鎖固件 2222‧‧‧Locker
2240‧‧‧固定部 2240‧‧‧Fixed Department
2242‧‧‧可移動部 2242‧‧‧Removable Department
2244‧‧‧扣件部 2244‧‧‧Deduction Department
S100~S130‧‧‧步驟 S100~S130‧‧‧Steps
第1圖顯示習知技術中背面研磨及背面研磨之後的製程；第2圖顯示根據本發明一實施例之晶圓承載裝置之立體圖；第3圖顯示第2圖之承載盤之分解圖；以及第4圖顯示根據本發明一實施例之限位單元之立體圖。 1 is a perspective view showing a process after back grinding and back grinding in a conventional technique; FIG. 2 is a perspective view showing a wafer carrying device according to an embodiment of the present invention; and FIG. 3 is an exploded view showing a carrier of FIG. 2; Figure 4 is a perspective view of a position limiting unit in accordance with an embodiment of the present invention.
請參閱第2圖至第3圖，第2圖顯示根據本發明一實施例之晶 圓承載裝置2之立體圖。第3圖顯示第2圖之承載盤22之分解圖。 Please refer to FIG. 2 to FIG. 3 , which shows a crystal according to an embodiment of the invention. A perspective view of the circular carrier 2. Figure 3 shows an exploded view of the carrier tray 22 of Figure 2.
該晶圓承載裝置2包括一基座20以及承載盤22。該晶圓承載裝置2用於承載一晶圓30，更明確地說，該晶圓承載裝置2之該承載盤22承載該晶圓30。該基座20之內部具有一進氣部24，該進氣部24用於提供使該晶圓30能漂浮至一特定位置之氣壓。該晶圓30具有一正面300以及一背面302。該正面300為具有線路的表面。該背面302為需要清洗或蝕刻的表面，因此必須曝露朝向上方。 The wafer carrier device 2 includes a susceptor 20 and a carrier disk 22. The wafer carrier device 2 is used to carry a wafer 30. More specifically, the carrier disk 22 of the wafer carrier device 2 carries the wafer 30. The interior of the susceptor 20 has an air inlet 24 for providing a gas pressure that allows the wafer 30 to float to a particular location. The wafer 30 has a front side 300 and a back side 302. The front side 300 is a surface having a line. The back side 302 is a surface that needs to be cleaned or etched and must therefore be exposed upwards.
該承載盤22固定於該基座20上，由該基座20定位該承載盤22。於本實施例中，該基座20大致呈一圓柱體的形狀，該承載盤22之下表面固定連結於該基座20上。於其他實施例中，該基座20並不限於如第2圖所示之形狀，只要能固定並定位該承載盤22即可。 The carrier 22 is fixed to the base 20, and the carrier 22 is positioned by the base 20. In this embodiment, the base 20 is substantially in the shape of a cylinder, and the lower surface of the carrier 22 is fixedly coupled to the base 20. In other embodiments, the base 20 is not limited to the shape shown in FIG. 2 as long as the carrier 22 can be fixed and positioned.
該晶圓30在未清洗或蝕刻時受到該承載盤22的承載，亦即該晶圓30之下表面在未清洗與該承載盤22接觸。如第3圖所示，該承載盤22包括一底盤220、一出氣盤222、以及複數個限位單元224。 The wafer 30 is carried by the carrier 22 when it is not cleaned or etched, that is, the lower surface of the wafer 30 is in contact with the carrier 22 without being cleaned. As shown in FIG. 3, the carrier tray 22 includes a chassis 220, an air outlet tray 222, and a plurality of limiting units 224.
該底盤220固定於該基座20上。該底盤220上包括複數個連接部2200。各連接部2200包括複數個氣孔2202。該出氣盤222設置於該底盤220上且包括複數個多孔性薄膜2220以及複數個鎖固件2222。於一較佳實施例中，該等多孔性薄膜2220的孔徑為0.1至0.5微米(micrometer；μm)，該等多孔性薄膜2220的厚度為1至5毫米(millimeter；mm)。該等多孔性薄膜2220的位置對應至該等連接部2200的位置。更明確地說，該等多孔性薄膜2220的下方對應至該等連接部2200，亦即對應至該等氣孔2202的位置。 The chassis 220 is fixed to the base 20. The chassis 220 includes a plurality of connecting portions 2200. Each connecting portion 2200 includes a plurality of air holes 2202. The air outlet tray 222 is disposed on the chassis 220 and includes a plurality of porous films 2220 and a plurality of locking members 2222. In a preferred embodiment, the porous film 2220 has a pore diameter of 0.1 to 0.5 micrometers (μm), and the porous film 2220 has a thickness of 1 to 5 millimeters (mm). The positions of the porous films 2220 correspond to the positions of the connecting portions 2200. More specifically, the lower side of the porous film 2220 corresponds to the connecting portions 2200, that is, to the positions of the air holes 2202.
於本實施例中，該等連接部2200被設置成同心圓的形狀，且相同圈之連接部2200被分離成複數個部分。於本實施例中，相同圈之連接部2200被分離成四個部分。相對應地，該等多孔性薄膜2220也被設置成同心圓的形狀，且相同圈之多孔性薄膜2220被分離成複數個部分。於本實施例中，相同圈之多孔性薄膜2220被分離成四個部分。該等鎖固件2222用於 鎖固在該底盤220上。 In the present embodiment, the connecting portions 2200 are arranged in a concentric shape, and the connecting portions 2200 of the same ring are separated into a plurality of portions. In the present embodiment, the connecting portion 2200 of the same circle is separated into four portions. Correspondingly, the porous films 2220 are also arranged in a concentric shape, and the porous film 2220 of the same circle is separated into a plurality of portions. In the present embodiment, the same film of the porous film 2220 is separated into four portions. The locks 2222 are used for Locked on the chassis 220.
該等限位單元224固定在該底盤220之周圍，用於使該晶圓30能限定在該出氣盤222上而不會掉落。此外，要說明的是，於本實施例中，該承載盤22包括四個限位單元224，然而限位單元224的數量並非限於四個，可為其他數量。 The limiting unit 224 is fixed around the chassis 220 for enabling the wafer 30 to be defined on the air outlet tray 222 without falling. In addition, in the embodiment, the carrier 22 includes four limiting units 224, however, the number of the limiting units 224 is not limited to four, and may be other numbers.
請參閱第4圖，第4圖顯示根據本發明一實施例之限位單元224之立體圖。 Please refer to FIG. 4, which shows a perspective view of the position limiting unit 224 according to an embodiment of the invention.
該限位單元224包括一固定部2240以及一可移動部2242。該限位單元224大致呈一鳥嘴形狀，更明確地說，該固定部2240大致呈倒L形狀，用於固定在該出氣盤222上。該可移動部2242嵌入於該固定部2240之一垂直邊中且包括一扣件部2244，該可移動部2242可朝向該固定部2240之一水平邊的方向傾斜，並帶動該扣件部2244朝向該固定部2240之水平邊的方向傾斜，藉此使第2圖之該晶圓30能限定在該出氣盤222上而不會掉落。 The limiting unit 224 includes a fixing portion 2240 and a movable portion 2242. The limiting unit 224 is substantially in the shape of a bird's beak. More specifically, the fixing portion 2240 has a substantially inverted L shape for being fixed to the air outlet disk 222. The movable portion 2242 is embedded in one of the vertical sides of the fixing portion 2240 and includes a fastener portion 2244. The movable portion 2242 can be inclined toward a horizontal side of the fixing portion 2240 and drive the fastener portion 2244. The direction toward the horizontal side of the fixing portion 2240 is inclined, whereby the wafer 30 of FIG. 2 can be defined on the air outlet tray 222 without falling.
請參閱第2圖至第4圖，當需要對該晶圓30進行清洗或蝕刻時，首先該基座20內部之進氣部24提供足夠使將該晶圓30能漂浮至特定位置之氣壓，該氣壓經由該等連接部2200之該等氣孔2202及該出氣盤之該等多孔性薄膜2220而使得該晶圓30漂浮至特定位置，較佳而言，本發明之晶圓承載裝置2能承載之晶圓30的厚度為35微米(micrometer；μm)至900微米，並能控制該晶圓30漂浮至該出氣盤222上方0.5毫米(millimeter；mm)至10毫米之間(亦即該特定位置為該出氣盤222上方0.5毫米至10毫米之間)。要說明的是，此時該晶圓30僅漂浮至該出氣盤222上方但並未旋轉。 Referring to FIGS. 2 to 4, when the wafer 30 needs to be cleaned or etched, first, the inlet portion 24 inside the susceptor 20 provides a gas pressure sufficient to float the wafer 30 to a specific position. The gas pressure floats the wafer 30 to a specific position via the pores 2202 of the connecting portions 2200 and the porous films 2220 of the gas outlet tray. Preferably, the wafer carrier device 2 of the present invention can carry The wafer 30 has a thickness of 35 micrometers (μm) to 900 micrometers, and can control the wafer 30 to float between 0.5 millimeters (millimeter; mm) and 10 millimeters above the gas outlet tray 222 (ie, the specific position). It is between 0.5 mm and 10 mm above the air outlet disk 222). It should be noted that at this time, the wafer 30 only floats above the air outlet tray 222 but does not rotate.
該等多孔性薄膜2220能將該進氣部24所產生之氣壓均勻的提供給該晶圓30，使得晶圓30漂浮至特定位置時不會有破裂的情況發生。 The porous film 2220 can uniformly supply the gas pressure generated by the gas inlet portion 24 to the wafer 30, so that the wafer 30 does not rupture when floating to a specific position.
該晶圓30漂浮至特定位置時，各可移動部2242在該進氣部24所產生的氣流、各可移動部2242的偏心力、以及各可移動部2242的離心力三者的作用下，各可移動部2242朝向該固定部2240之水平邊的方向傾斜(即 朝向該出氣盤222的內部傾斜)，進而帶動各扣件部2244朝向該固定部2240之水平邊的方向傾斜，使得各限位單元224能夾持住該晶圓30並帶動該晶圓30旋轉，更明確地說，各限位單元224之各扣件部2244的頂端能夾持住該晶圓30並帶動該晶圓30旋轉。 When the wafer 30 floats to a specific position, each of the movable portions 2242 is operated by the airflow generated by the intake portion 24, the eccentric force of each movable portion 2242, and the centrifugal force of each movable portion 2242. The movable portion 2242 is inclined toward the horizontal side of the fixed portion 2240 (ie, The tilting of the inner portion of the air outlet plate 222, and the tilting of the fastener portion 2244 toward the horizontal side of the fixing portion 2240, so that the limiting unit 224 can clamp the wafer 30 and drive the wafer 30 to rotate. More specifically, the top end of each fastener portion 2244 of each of the limiting units 224 can hold the wafer 30 and drive the wafer 30 to rotate.
接著，設置於該晶圓30上方之一噴灑單元(未圖示)對該晶圓30噴灑清洗或蝕刻所需之化學藥劑、氮氣、或清水。該晶圓30能承受0.2公斤(kilogram；kg)至5公斤的壓力。由於該晶圓30在各扣件部2244的帶動下旋轉，因此該晶圓30在清洗或蝕刻時所噴灑的化學藥劑、氮氣、或清水會向外甩出，並不會流至該晶圓30之正面300(具有線路)，亦即不會破壞該晶圓30之正面300的線路。 Next, a spray unit (not shown) disposed above the wafer 30 sprays the wafer 30 with a chemical, nitrogen, or clean water required for cleaning or etching. The wafer 30 can withstand a pressure of from 0.2 kilograms (kg) to 5 kilograms. Since the wafer 30 is rotated by the fastener portions 2244, the chemical, nitrogen, or water sprayed by the wafer 30 during cleaning or etching will be thrown out and will not flow to the wafer. The front side 300 of 30 has a line, that is, the line that does not damage the front side 300 of the wafer 30.
最後，當結束對該晶圓30的清洗或蝕刻時，噴灑單元(未圖示)停止對該晶圓30噴灑化學藥劑、氮氣、或清水，該進氣部24也停止提供氣壓，原本各可移動部2242朝向該固定部2240之水平邊的方向傾斜(即朝向該出氣盤222的內部傾斜)，此時各可移動部2242在該進氣部24所產生的氣流、各可移動部2242的偏心力、以及各可移動部2242的離心力三者消失的情況下，各可移動部2242會恢復至垂直的方向，進而使得各扣件部2244的頂端也會恢復至垂直的方向而不再夾持住該晶圓30，該晶圓30將會緩慢地平放在該出氣盤222上。 Finally, when the cleaning or etching of the wafer 30 is finished, the spraying unit (not shown) stops spraying the chemical, nitrogen, or water on the wafer 30, and the air inlet portion 24 also stops supplying air pressure. The moving portion 2242 is inclined toward the horizontal side of the fixing portion 2240 (ie, inclined toward the inside of the air outlet tray 222), and at this time, the airflow generated by each movable portion 2242 in the air inlet portion 24 and the movable portion 2242 are When the eccentric force and the centrifugal force of each movable portion 2242 disappear, the movable portions 2242 are restored to the vertical direction, so that the top ends of the fastener portions 2244 are also restored to the vertical direction without being clipped. Holding the wafer 30, the wafer 30 will slowly lie flat on the vent plate 222.
綜上所述，本發明之晶圓承載裝置2採用之多孔性薄膜2220能提供均勻的氣壓給晶圓30，使得晶圓30在進氣部24的作用而漂浮至特定位置時不會有破裂的情況發生。再者，本發明之晶圓承載裝置2採用扣件部2244帶動晶圓30旋轉，在清洗或蝕刻時所噴灑的化學藥劑、氮氣、或清水不會流至晶圓30之正面300，因此不會破壞晶圓30之正面300的線路。 In summary, the porous film 2220 of the wafer carrying device 2 of the present invention can provide uniform gas pressure to the wafer 30, so that the wafer 30 does not rupture when it floats to a specific position by the action of the air inlet portion 24. The situation happened. Furthermore, the wafer carrier device 2 of the present invention uses the fastener portion 2244 to rotate the wafer 30, and the chemical, nitrogen, or clean water sprayed during cleaning or etching does not flow to the front surface 300 of the wafer 30, and thus does not The lines of the front side 300 of the wafer 30 are destroyed.
雖然本發明已用較佳實施例揭露如上，然其並非用以限定本發明，本發明所屬技術領域中具有通常知識者在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請 專利範圍所界定者為準。 While the invention has been described above by way of a preferred embodiment, the invention is not intended to be limited thereto, and the invention may be modified and modified without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention is attached to the application The scope defined by the patent scope shall prevail.
2‧‧‧晶圓承載裝置 2‧‧‧ wafer carrier
20‧‧‧基座 20‧‧‧ Pedestal
22‧‧‧承載盤 22‧‧‧ Carrying tray
24‧‧‧進氣部 24‧‧‧Intake Department
30‧‧‧晶圓 30‧‧‧ Wafer
300‧‧‧正面 300‧‧‧ positive
302‧‧‧背面 302‧‧‧Back
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| TW104140094A TWI566327B (en) | 2015-12-01 | 2015-12-01 | Wafer supporting device |
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| TW104140094A TWI566327B (en) | 2015-12-01 | 2015-12-01 | Wafer supporting device |
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| TWI566327B true TWI566327B (en) | 2017-01-11 |
| TW201721796A TW201721796A (en) | 2017-06-16 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100340154B1 (en) * | 1999-12-06 | 2002-06-10 | 김광교 | Wafer chuck for spinning a wafer |
| US20030168174A1 (en) * | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
| TWI305939B (en) * | 2003-07-28 | 2009-02-01 | Sipec Corp | |
| TWI384581B (en) * | 2006-08-08 | 2013-02-01 | Mujin Electronics Co Ltd | Device for supporting substrate |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100340154B1 (en) * | 1999-12-06 | 2002-06-10 | 김광교 | Wafer chuck for spinning a wafer |
| US20030168174A1 (en) * | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
| TWI305939B (en) * | 2003-07-28 | 2009-02-01 | Sipec Corp | |
| TWI384581B (en) * | 2006-08-08 | 2013-02-01 | Mujin Electronics Co Ltd | Device for supporting substrate |
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| TW201721796A (en) | 2017-06-16 |
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