TWI565558B - Device for detecting surface topography of polish pad, cmp polish machine with the same and method of dectecting surface topography of polish pad - Google Patents
Device for detecting surface topography of polish pad, cmp polish machine with the same and method of dectecting surface topography of polish pad Download PDFInfo
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- TWI565558B TWI565558B TW101108899A TW101108899A TWI565558B TW I565558 B TWI565558 B TW I565558B TW 101108899 A TW101108899 A TW 101108899A TW 101108899 A TW101108899 A TW 101108899A TW I565558 B TWI565558 B TW I565558B
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Description
本發明是有關於一種研磨墊表面形態檢測裝置、具有此裝置之化學機械研磨機台及研磨墊表面形態的檢測方法。The present invention relates to a polishing pad surface morphology detecting device, a chemical mechanical polishing machine having the same, and a method for detecting the surface morphology of the polishing pad.
化學機械研磨技術是目前半導體製程中一個不可或缺的“全面性平坦化(global planarization)”技術。然而,化學機械研磨機台所使用的研磨墊是主要的一種耗材。通常研磨墊在經歷過研磨數百次之後必須更換。不過由於每次研磨時的製程條件不同,再加上研磨墊本身製造品質上也有差異,所以很難判斷一研磨墊的使用之壽命終點(Life time end)。而且,目前習知關於研磨墊的磨耗程度與壽命終點並無一套客觀的評估方式。一般都是以經驗值,例如是以累積的研磨片數,或是利用研磨的時間長短,來決定是否應更換研磨墊。但是,此種方式太過於粗糙,不能精確掌握研磨墊的磨耗程度,無法有效的使用至壽命終點,因而易造成多餘的浪費,且當研磨墊異常磨耗時無法立即發現,造成研磨輪廓(polish profile)變異,影響研磨晶圓(polish wafer)的平坦度。因此客觀的掌握研磨墊的磨耗程度與壽命終點,是目前欲突破的課題。Chemical mechanical polishing technology is an indispensable "global planarization" technology in semiconductor manufacturing. However, the polishing pad used in the chemical mechanical polishing machine is a major consumable. Usually the polishing pad has to be replaced after several hundred grindings. However, since the process conditions at each polishing are different, and the manufacturing quality of the polishing pad itself is also different, it is difficult to judge the life end of the polishing pad. Moreover, there is currently no known objective assessment of the degree of wear and end of life of the polishing pad. It is generally based on empirical values, such as the number of accumulated abrasive pieces, or the length of time used for grinding to determine whether the polishing pad should be replaced. However, this method is too rough, can not accurately grasp the degree of wear of the polishing pad, can not be effectively used to the end of life, thus easily causing unnecessary waste, and can not be immediately found when the polishing pad is abnormally worn, resulting in a polishing profile (polish profile Variation, affecting the flatness of the polish wafer. Therefore, objectively grasping the wear level and end of life of the polishing pad is the subject of current breakthrough.
本發明提供一種化學機械研磨機台,其可自我檢測研磨墊之構形(topography),客觀的掌握研磨墊的磨耗程度與壽命終點。The invention provides a chemical mechanical polishing machine which can self-detect the topography of the polishing pad and objectively grasp the abrasion degree and the end of life of the polishing pad.
本發明提供一種研磨墊表面形態檢測裝置,可以立即發現研磨墊異常磨耗,使研磨墊有效的使用至壽命終點。The invention provides a polishing pad surface morphology detecting device, which can immediately find the abrasive pad abnormal wear, and effectively use the polishing pad to the end of life.
本發明提供一種研磨墊表面形態的檢測方法,可以精確掌握研磨墊的磨耗程度,使研磨墊有效的使用至壽命終點。The invention provides a method for detecting the surface morphology of a polishing pad, which can accurately grasp the abrasion degree of the polishing pad and enable the polishing pad to be effectively used to the end of life.
本發明提出一種可自我檢測研磨墊構形之化學機械研磨機台,包括研磨台、研磨墊、第一電極、多個第二電極以及控制模組。研磨墊設置於上述研磨台上。第一電極設置於上述研磨台與上述研磨墊的第一表面之間。多個第二電極設置於上述研磨墊的第二表面上。控制模組連接上述第一電極與上述第二電極,可經由測得上述第一電極與上述第二電極之間的多個電容而得到上述研磨墊的上述第二表面的表面形態,並藉以控制研磨條件。The invention provides a chemical mechanical polishing machine capable of self-detecting the configuration of the polishing pad, comprising a polishing table, a polishing pad, a first electrode, a plurality of second electrodes and a control module. The polishing pad is disposed on the polishing table. The first electrode is disposed between the polishing table and the first surface of the polishing pad. A plurality of second electrodes are disposed on the second surface of the polishing pad. The control module is connected to the first electrode and the second electrode, and obtains a surface shape of the second surface of the polishing pad by measuring a plurality of capacitances between the first electrode and the second electrode, thereby controlling Grinding conditions.
依照本發明實施例所述,上述可自我檢測研磨墊構形之化學機械研磨機台更包括研磨墊修整器(Diamond dresser)、研磨頭、研磨台、研磨液流量控制器,其設置於上述研磨墊上方,且上述控制研磨條件係控制上述研磨墊修整器、上述研磨頭、上述研磨台、上述研磨液流量控制器的參數。According to an embodiment of the invention, the chemical mechanical polishing machine capable of self-detecting the polishing pad configuration further comprises a diamond dresser, a polishing head, a polishing table, and a slurry flow controller, which are disposed on the grinding device. Above the pad, the controlled polishing condition controls parameters of the polishing pad conditioner, the polishing head, the polishing table, and the polishing liquid flow controller.
依照本發明實施例所述,上述研磨墊修整器、上述研磨頭、上述研磨台的參數包括轉速(rotation speed)、下壓力(down force)或掃掠頻率(sweep frequency)。According to an embodiment of the invention, the parameters of the polishing pad conditioner, the polishing head, and the polishing table include a rotation speed, a down force, or a sweep frequency.
依照本發明實施例所述,上述可自我檢測研磨墊構形之化學機械研磨機台更包括研磨液供給模組管路,且上述控制研磨條件係控制上述研磨液供給模組管路所提供之研磨液的流量。According to an embodiment of the invention, the chemical mechanical polishing machine capable of self-detecting the polishing pad configuration further comprises a slurry supply module pipeline, and the control polishing condition is controlled by the pipeline of the slurry supply module. The flow rate of the slurry.
依照本發明實施例所述,上述控制模組包括控制單元與主單元。控制單元連接上述第一電極與上述第二電極以及上述主單元,並且可測得上述第一電極與上述第二電極之間的多個電容,而得到上述研磨墊之表面形態,並將上述研磨墊之表面形態的訊號提供給上述主單元。主單元接收上述控制單元所提供的上述研磨墊之表面形態的訊號,並依據上述訊號控制上述研磨墊修整器、上述研磨頭的參數,或上述研磨液供給模組管路所提供之研磨液的流量。According to an embodiment of the invention, the control module comprises a control unit and a main unit. The control unit connects the first electrode and the second electrode and the main unit, and can measure a plurality of capacitances between the first electrode and the second electrode to obtain a surface morphology of the polishing pad, and the grinding A signal of the surface morphology of the mat is supplied to the main unit. The main unit receives the signal of the surface shape of the polishing pad provided by the control unit, and controls the parameters of the polishing pad dresser, the polishing head or the polishing liquid provided by the slurry supply module pipeline according to the signal flow.
依照本發明實施例所述,上述主單元更包括一警告裝置,於上述研磨墊的表面形態達到臨界值時發出警告訊息。According to an embodiment of the invention, the main unit further includes a warning device for issuing a warning message when the surface morphology of the polishing pad reaches a critical value.
依照本發明實施例所述,上述可自我檢測研磨墊構形之化學機械研磨機台更包括軟性電極整合模組,上述第二電極附接於上述軟性電極整合模組上,使上述第二電極與上述研磨墊的上述第二表面實質上接觸。According to an embodiment of the invention, the chemical mechanical polishing machine for self-detecting the polishing pad configuration further comprises a flexible electrode integration module, wherein the second electrode is attached to the flexible electrode integration module to make the second electrode It is in substantial contact with the second surface of the polishing pad.
本發明又提出一種研磨墊表面形態檢測裝置,包括第一電極、多個第二電極以及控制模組。上述第一電極設置於研磨墊的第一表面上。上述第二電極設置於上述研磨墊的第二表面上。控制模組連接上述第一電極與上述第二電極,並且經由測得上述第一電極與上述第二電極之間的多個電容的電容值,而得到上述研磨墊的上述第二表面的表面形態,並藉以控制研磨條件。The invention further provides a polishing pad surface morphology detecting device, comprising a first electrode, a plurality of second electrodes and a control module. The first electrode is disposed on the first surface of the polishing pad. The second electrode is disposed on the second surface of the polishing pad. The control module is connected to the first electrode and the second electrode, and obtains a surface shape of the second surface of the polishing pad by measuring a capacitance value of a plurality of capacitors between the first electrode and the second electrode And to control the grinding conditions.
依照本發明實施例所述,上述控制模組更連接研磨墊修整器、研磨頭、研磨台、研磨液流量控制器,用以控制上述研磨墊修整器、研磨頭、研磨台或研磨液流量控制器的參數。According to an embodiment of the invention, the control module is further connected to the polishing pad dresser, the polishing head, the polishing table, and the polishing liquid flow controller for controlling the polishing pad dresser, the polishing head, the polishing table or the slurry flow control The parameters of the device.
依照本發明實施例所述,上述研磨墊修整器、研磨頭、研磨台的參數包括轉速、下壓力或掃掠頻率。According to an embodiment of the invention, the parameters of the polishing pad dresser, the polishing head, and the polishing table include a rotational speed, a downward pressure, or a sweep frequency.
依照本發明實施例所述,上述控制模組更連接一研磨液供給模組管路,用以控制上述研磨液供給模組管路所提供之研磨液的流量。According to an embodiment of the invention, the control module is further connected to a slurry supply module pipeline for controlling the flow rate of the slurry provided by the slurry supply module pipeline.
依照本發明實施例所述,上述控制模組包括控制單元與主單元。控制單元連接上述第一電極與上述第二電極以及上述主單元,並且經由測得上述第一電極與上述第二電極之間的多個電容而得到上述研磨墊之表面形態,並將上述研磨墊之表面形態的訊號提供給上述主單元。主單元接收上述控制單元所提供的上述研磨墊之表面形態的訊號,並依據上述訊號控制一研磨墊修整器、研磨頭、研磨台的參數,或一研磨液供給模組管路所提供之研磨液的流量。According to an embodiment of the invention, the control module comprises a control unit and a main unit. The control unit connects the first electrode and the second electrode and the main unit, and obtains a surface morphology of the polishing pad by measuring a plurality of capacitances between the first electrode and the second electrode, and the polishing pad is The signal of the surface morphology is supplied to the above main unit. The main unit receives the signal of the surface morphology of the polishing pad provided by the control unit, and controls the parameters of a polishing pad dresser, the polishing head, the polishing table, or the grinding provided by the slurry supply module pipeline according to the signal. The flow rate of the liquid.
依照本發明實施例所述,上述主單元更包括警告裝置,於上述研磨墊的表面形態達到臨界值時發出警告。According to an embodiment of the invention, the main unit further includes a warning device that issues a warning when the surface morphology of the polishing pad reaches a critical value.
依照本發明實施例所述,上述研磨墊表面形態檢測裝置更包括軟性電極整合模組,上述第二電極附接於上述軟性電極整合模組上,使上述第二電極與上述研磨墊的上述第二表面實質上接觸。According to an embodiment of the invention, the polishing pad surface morphology detecting device further includes a flexible electrode integration module, wherein the second electrode is attached to the flexible electrode integration module, and the second electrode and the polishing pad are respectively The two surfaces are in substantial contact.
本發明又一種研磨墊表面形態的檢測方法,包括在研磨墊的第一表面上設置第一電極,並在上述研磨墊的第二表面上設置至少一第二電極,之後測量上述第一電極與上述第二電極之間的多個電容,以得到上述研磨墊的上述第二表面的表面形態。A method for detecting a surface morphology of a polishing pad, comprising: disposing a first electrode on a first surface of the polishing pad, and providing at least one second electrode on the second surface of the polishing pad, and then measuring the first electrode and a plurality of capacitances between the second electrodes to obtain a surface morphology of the second surface of the polishing pad.
依照本發明實施例所述,上述研磨墊表面形態的檢測方法,更包括提供軟性電極整合模組,上述第二電極附接於上述軟性電極整合模組上,使上述第二電極與上述研磨墊的上述第二表面實質上接觸。According to an embodiment of the invention, the method for detecting the surface morphology of the polishing pad further includes providing a flexible electrode integration module, wherein the second electrode is attached to the flexible electrode integration module, and the second electrode and the polishing pad are The above second surface is substantially in contact.
本發明上述之化學機械研磨機台可自我檢測研磨墊之構形,客觀的掌握研磨墊的磨耗程度與壽命終點。The above-mentioned chemical mechanical polishing machine of the invention can self-detect the configuration of the polishing pad, and objectively grasp the abrasion degree and the end of life of the polishing pad.
本發明上述之研磨墊表面形態檢測裝置,可以立即發現研磨墊異常磨耗,使研磨墊有效的使用至壽命終點。According to the above-mentioned polishing pad surface morphology detecting device of the present invention, the polishing pad can be immediately found to be abnormally worn, and the polishing pad can be effectively used to the end of life.
本發明上述之研磨墊表面形態的檢測方法,可以精確掌握研磨墊的磨耗程度,使研磨墊有效的使用至壽命終點。According to the method for detecting the surface morphology of the polishing pad of the present invention, the degree of wear of the polishing pad can be accurately grasped, and the polishing pad can be effectively used to the end of life.
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
圖1是依據本發明實施例繪示一種研磨墊表面形態檢測裝置的剖面示意圖。圖2是繪示具有用以檢測研磨墊表面形態裝置之化學機械研磨機台。1 is a cross-sectional view showing a surface morphology detecting device of a polishing pad according to an embodiment of the invention. Figure 2 is a diagram showing a chemical mechanical polishing machine having means for detecting the surface morphology of the polishing pad.
請參照圖1,本發明實施例之研磨墊表面形態檢測裝置100包括第一電極10、第二電極12以及控制模組14。圖2的化學機械研磨機台200則是包括研磨台20、研磨墊22、研磨墊修整器24、研磨液供給模組管路26以及研磨墊表面形態檢測裝置100。Referring to FIG. 1 , a polishing pad surface morphology detecting apparatus 100 according to an embodiment of the present invention includes a first electrode 10 , a second electrode 12 , and a control module 14 . The chemical mechanical polishing machine 200 of FIG. 2 includes a polishing table 20, a polishing pad 22, a polishing pad conditioner 24, a polishing liquid supply module line 26, and a polishing pad surface morphology detecting device 100.
請參照圖2,研磨墊22設置於研磨台20上。研磨墊22的第一表面22a與第二表面22b相對應。在一實施例中,研磨墊22的第一表面22a的平坦度大於研磨墊22的第二表面22b的平坦度;研磨墊22的第二表面22b的高低起伏的程度大於研磨墊22的第一表面22a者。換言之,在一實施例中,第二表面22b是指在研磨過程中與晶圓被研磨的表面接觸的表面,或與研磨墊修整器24或研磨頭25接觸,或接受研磨液或溶液供給管路所供應之研磨液的研磨墊22的表面。Referring to FIG. 2, the polishing pad 22 is disposed on the polishing table 20. The first surface 22a of the polishing pad 22 corresponds to the second surface 22b. In one embodiment, the flatness of the first surface 22a of the polishing pad 22 is greater than the flatness of the second surface 22b of the polishing pad 22; the height of the second surface 22b of the polishing pad 22 is greater than the first of the polishing pad 22 Surface 22a. In other words, in one embodiment, the second surface 22b refers to a surface that is in contact with the surface on which the wafer is polished during the grinding process, or is in contact with the polishing pad conditioner 24 or the polishing head 25, or receives a slurry or solution supply tube. The surface of the polishing pad 22 of the slurry supplied by the road.
請參照圖1與圖2,第一電極10設置於研磨墊22的第一表面22a與研磨台20之間。第一電極10的材料包括導體材料。多個第二電極12設置於研磨墊22的第二表面22b的不同位置上。第二電極12的材料包括導體材料。Referring to FIGS. 1 and 2 , the first electrode 10 is disposed between the first surface 22 a of the polishing pad 22 and the polishing table 20 . The material of the first electrode 10 includes a conductor material. The plurality of second electrodes 12 are disposed at different positions of the second surface 22b of the polishing pad 22. The material of the second electrode 12 includes a conductor material.
在一實施例中,上述的研磨墊表面形態檢測裝置可以更包括軟性電極整合模組13,使上述的多個第二電極12可以附接於此軟性電極整合模組13上並且電性連接,使上述的多個第二電極12可以與研磨墊22的第二表面22b實質上接觸。軟性電極整合模組13的材料可為可繞性材質,可跟隨研磨墊表面形變,來測量研磨墊的表面形態。軟性電極整合模組13的材料例如是有機材料或是高分子材料。在一實施例中,第二電極12可以整合在軟性電極整合模組內13,減少第二電極12的耗損。第二電極12可由上而下懸空靠近研磨墊,且如研磨頭一樣,可控制固定下壓力。In one embodiment, the polishing pad surface morphology detecting device may further include a flexible electrode integration module 13 so that the plurality of second electrodes 12 can be attached to the flexible electrode integration module 13 and electrically connected. The plurality of second electrodes 12 described above may be brought into substantial contact with the second surface 22b of the polishing pad 22. The material of the flexible electrode integration module 13 can be a recyclable material, and can follow the surface deformation of the polishing pad to measure the surface morphology of the polishing pad. The material of the flexible electrode integration module 13 is, for example, an organic material or a polymer material. In an embodiment, the second electrode 12 can be integrated into the flexible electrode integration module 13 to reduce the wear of the second electrode 12. The second electrode 12 can be suspended from top to bottom close to the polishing pad, and like the polishing head, the fixed downforce can be controlled.
控制模組14連接第一電極10與第二電極12,並且透過平板電容器的原理偵測第一電極10與第二電極12之間的多個電容C1、C2、C3、...Cn,以得到研磨墊22在各個區域的厚度d1、d2、d3、...dn。其計算的公式如下:The control module 14 connects the first electrode 10 and the second electrode 12, and detects the plurality of capacitances C 1 , C 2 , C 3 , ... between the first electrode 10 and the second electrode 12 through the principle of the plate capacitor. C n to obtain thicknesses d 1 , d 2 , d 3 , ... d n of the polishing pad 22 in each region. The formula for its calculation is as follows:
Cn=ε0A/dn C n = ε 0 A/d n
其中A是平板面積,dn是研磨墊22的厚度,n為第二電極的數目。藉由所得到的研磨墊22在各個區域的厚度可以得知第二表面22b的表面形態,且控制模組14可以依據所得到的表面形態資訊來調變控制研磨條件或及時提醒或停機。Where A is the plate area, dn is the thickness of the polishing pad 22, and n is the number of second electrodes. The surface morphology of the second surface 22b can be known by the thickness of the obtained polishing pad 22 in each region, and the control module 14 can adjust the control polishing condition or timely remind or stop according to the obtained surface shape information.
再者,此控制模組14可以連接研磨墊修整器24、研磨頭25、研磨台20,以控制研磨墊修整器24、研磨頭25、研磨台20的參數。研磨墊修整器24、研磨頭25、研磨台20的參數包括轉速、下壓力或掃掠頻率。此控制模組14也可連接研磨液供給模組管路26,用以控制研磨液供給模組管路26所提供之研磨液的流量。當所得到研磨墊22在第一區域的厚度較大於第二區域的厚度時,或是在第一區域的厚度較大於所測得所有區域的平均厚度時,可以調整研磨墊修整器24、研磨頭25、研磨台20在第一區域的轉速、下壓力或掃掠頻率,或調整研磨液供給模組管路26提供給第一區域之研磨液的流量,以增加研磨墊22在第一區的磨耗;或者調整研磨墊修整器24、研磨頭25、研磨台20在第二區域的轉速、下壓力或掃掠頻率,或調整研磨液供給模組管路26提供給第二區域的研磨液的流量,以減少研磨墊22在第二區的磨耗,使第一區與第二區之間的研磨墊的磨耗差異減少,或使第一區與其他區之間的研磨墊的磨耗差異減少。當所得到研磨墊22在第一區域的厚度較小於第二區域的厚度時,或是在第一區域的厚度較小於所測得所有區域的平均厚度時,可以調整研磨墊修整器24、研磨頭25、研磨台20在第一區的轉速、下壓力或掃掠頻率,或調整研磨液供給模組管路26提供給第一區之研磨液的流量,以減少研磨墊22在第一區的磨耗;或者調整研磨墊修整器24、研磨頭25、研磨台20在第二區域的轉速、下壓力或掃掠頻率,或調整研磨液供給模組管路26提供給第二區域的研磨液的流量,以增加研磨墊22在第二區的磨耗,使第一區與第二區之間的研磨墊的磨耗差異減少,或使第一區與其他區之間的研磨墊的磨耗差異減少。Furthermore, the control module 14 can be connected to the polishing pad conditioner 24, the polishing head 25, and the polishing table 20 to control the parameters of the polishing pad conditioner 24, the polishing head 25, and the polishing table 20. The parameters of the polishing pad conditioner 24, the polishing head 25, and the polishing table 20 include the rotational speed, the downward pressure, or the sweep frequency. The control module 14 can also be connected to the slurry supply module line 26 for controlling the flow rate of the slurry supplied by the slurry supply module line 26. When the thickness of the obtained polishing pad 22 in the first region is larger than the thickness of the second region, or when the thickness of the first region is larger than the average thickness of all the regions measured, the polishing pad conditioner 24 can be adjusted and ground. The head 25, the rotational speed of the first stage, the downforce or the sweep frequency of the polishing table 20, or the flow rate of the slurry supplied to the first area by the slurry supply module line 26 to increase the polishing pad 22 in the first zone Abrasion; or adjusting the polishing pad conditioner 24, the polishing head 25, the rotational speed of the polishing table 20 in the second region, the downforce or the sweep frequency, or adjusting the slurry supplied to the second region by the slurry supply module line 26. The flow rate to reduce the wear of the polishing pad 22 in the second zone, such that the difference in wear of the polishing pad between the first zone and the second zone is reduced, or the difference in wear between the first zone and the other zone is reduced. . The polishing pad conditioner 24 can be adjusted when the resulting polishing pad 22 has a thickness in the first region that is smaller than the thickness of the second region, or when the thickness of the first region is smaller than the average thickness of all of the measured regions. , the grinding head 25, the rotating table 20 in the first zone of the rotational speed, the downforce or the sweep frequency, or adjust the flow rate of the slurry supplied to the first zone by the slurry supply module line 26 to reduce the polishing pad 22 Wear of a zone; or adjusting the rotational pad conditioner 24, the polishing head 25, the rotational speed of the polishing table 20 in the second zone, the downforce or the sweep frequency, or adjusting the supply of the slurry supply module 26 to the second zone The flow rate of the slurry increases the wear of the polishing pad 22 in the second zone, so that the difference in wear of the polishing pad between the first zone and the second zone is reduced, or the polishing pad between the first zone and the other zone is worn. The difference is reduced.
在一實施例中,控制模組14包括控制單元16與主單元18。控制單元16連接第一電極10與第二電極12,並且經由第一電極10與第二電極12之間的多個電容得到研磨墊22之表面形態。主單元18接收控制單元16所提供的研磨墊22之表面形態的訊號,並依據此訊號控制研磨墊修整器24、研磨頭25、研磨台20的參數,或研磨液供給模組管路26所提供之研磨液的流量。在一實施例中,主單元18可以更包括警告裝置,於研磨墊22的表面形態達到臨界值時發出警告。此處所述的臨界值例如是研磨墊22在不同區域之厚度差、研磨墊22在特定區域或不特定區域的最小厚度值。In an embodiment, the control module 14 includes a control unit 16 and a main unit 18. The control unit 16 connects the first electrode 10 and the second electrode 12, and obtains a surface morphology of the polishing pad 22 via a plurality of capacitances between the first electrode 10 and the second electrode 12. The main unit 18 receives the signal of the surface morphology of the polishing pad 22 provided by the control unit 16, and controls the parameters of the polishing pad conditioner 24, the polishing head 25, the polishing table 20, or the slurry supply module line 26 according to the signal. The flow rate of the slurry provided. In an embodiment, the main unit 18 may further include a warning device to issue a warning when the surface morphology of the polishing pad 22 reaches a critical value. The critical values described herein are, for example, the difference in thickness of the polishing pad 22 in different regions, the minimum thickness value of the polishing pad 22 in a particular region or an unspecified region.
簡而言之,上述研磨墊表面形態檢測裝置可形成閉迴路系統(CLOSE LOOP system),透過控制模組來調整參數(下壓力、轉速、研磨液的流量或掃掠頻率),並可發出警告訊息及時提醒或停機,因此可讓研磨墊使用效率最大化,對於研磨墊的異常磨耗也可立即發現,減少異常所造成的,藉以提升研磨的品質以及延長研磨墊的使用壽命。In short, the above-mentioned polishing pad surface morphology detecting device can form a closed loop system (CLOSE LOOP system), and the parameters can be adjusted through the control module (down pressure, rotational speed, flow rate of the slurry or sweep frequency), and a warning can be issued. The message is promptly reminded or stopped, so that the polishing pad can be used to maximize efficiency, and the abnormal wear of the polishing pad can be immediately found, thereby reducing the abnormality, thereby improving the quality of the polishing and prolonging the service life of the polishing pad.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
10...第一電極10. . . First electrode
12...第二電極12. . . Second electrode
13‧‧‧軟性電極整合模組 13‧‧‧Soft electrode integration module
14‧‧‧控制模組 14‧‧‧Control Module
16‧‧‧控制單元 16‧‧‧Control unit
18‧‧‧主單元 18‧‧‧Main unit
20‧‧‧研磨台 20‧‧‧ polishing table
22‧‧‧研磨墊 22‧‧‧ polishing pad
22a‧‧‧第一表面 22a‧‧‧ first surface
22b‧‧‧第二表面 22b‧‧‧ second surface
24‧‧‧研磨墊修整器 24‧‧‧ polishing pad dresser
25‧‧‧研磨頭 25‧‧‧ polishing head
26‧‧‧研磨液供給模組管路 26‧‧‧grinding fluid supply module piping
100‧‧‧研磨墊表面形態檢測裝置 100‧‧‧ polishing pad surface shape detecting device
200‧‧‧化學機械研磨機台200‧‧‧Chemical mechanical grinding machine
圖1是依據本發明實施例繪示一種研磨墊表面形態檢測裝置的剖面示意圖。1 is a cross-sectional view showing a surface morphology detecting device of a polishing pad according to an embodiment of the invention.
圖2是繪示具有用以檢測研磨墊表面形態裝置之化學機械研磨機台。Figure 2 is a diagram showing a chemical mechanical polishing machine having means for detecting the surface morphology of the polishing pad.
10...第一電極10. . . First electrode
12...第二電極12. . . Second electrode
13...軟性電極整合模組13. . . Flexible electrode integration module
14...控制模組14. . . Control module
16...控制單元16. . . control unit
18...主單元18. . . Main unit
20...研磨台20. . . Grinding table
22...研磨墊twenty two. . . Abrasive pad
22a...第一表面22a. . . First surface
22b...第二表面22b. . . Second surface
24...研磨墊修整器twenty four. . . Abrasive pad dresser
25...研磨頭25. . . Grinding head
26...研磨液供給模組管路26. . . Slurry supply module piping
100...研磨墊表面形態檢測裝置100. . . Abrasive pad surface shape detecting device
200...化學機械研磨機台200. . . Chemical mechanical grinding machine
Claims (16)
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US5882243A (en) * | 1997-04-24 | 1999-03-16 | Motorola, Inc. | Method for polishing a semiconductor wafer using dynamic control |
US20030060127A1 (en) * | 2001-09-10 | 2003-03-27 | Kaushal Tony S. | Sensor for in-situ pad wear during CMP |
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US5882243A (en) * | 1997-04-24 | 1999-03-16 | Motorola, Inc. | Method for polishing a semiconductor wafer using dynamic control |
US20030060127A1 (en) * | 2001-09-10 | 2003-03-27 | Kaushal Tony S. | Sensor for in-situ pad wear during CMP |
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