TWI562412B - Process for fabricating an acoustic wave resonator comprising a suspended membrane - Google Patents
Process for fabricating an acoustic wave resonator comprising a suspended membraneInfo
- Publication number
- TWI562412B TWI562412B TW100145537A TW100145537A TWI562412B TW I562412 B TWI562412 B TW I562412B TW 100145537 A TW100145537 A TW 100145537A TW 100145537 A TW100145537 A TW 100145537A TW I562412 B TWI562412 B TW I562412B
- Authority
- TW
- Taiwan
- Prior art keywords
- fabricating
- acoustic wave
- wave resonator
- suspended membrane
- suspended
- Prior art date
Links
- 239000012528 membrane Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/30—Partial laminating
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1060358A FR2968861B1 (fr) | 2010-12-10 | 2010-12-10 | Procédé de fabrication d'un résonateur a ondes acoustiques comprenant une membrane suspendue |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201244197A TW201244197A (en) | 2012-11-01 |
TWI562412B true TWI562412B (en) | 2016-12-11 |
Family
ID=45044460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100145537A TWI562412B (en) | 2010-12-10 | 2011-12-09 | Process for fabricating an acoustic wave resonator comprising a suspended membrane |
Country Status (8)
Country | Link |
---|---|
US (1) | US8715517B2 (zh) |
EP (1) | EP2464006B1 (zh) |
JP (1) | JP6047789B2 (zh) |
KR (1) | KR101910195B1 (zh) |
CN (1) | CN102545814B (zh) |
FR (1) | FR2968861B1 (zh) |
SG (1) | SG184621A1 (zh) |
TW (1) | TWI562412B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2951336B1 (fr) | 2009-10-09 | 2017-02-10 | Commissariat A L'energie Atomique | Dispositif a ondes acoustiques comprenant un filtre a ondes de surface et un filtre a ondes de volume et procede de fabrication |
FR2974691B1 (fr) | 2011-04-28 | 2019-08-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif electromecanique a ondes acoustiques comprenant une zone de transduction et une cavite etendue |
FR2976126B1 (fr) | 2011-06-01 | 2014-05-09 | Commissariat Energie Atomique | Composant electrique comprenant un materiau de structure perovskite et des electrodes optimisees et procede de fabrication |
DE102013019434A1 (de) * | 2013-11-20 | 2015-05-21 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co. | Festkörperfügen eines Trägerkörpers und einer Deckschicht, insbesondere durch anodisches Bonden |
KR102207928B1 (ko) | 2014-08-13 | 2021-01-26 | 삼성전자주식회사 | 음향 센싱 소자 및 주파수 정보 획득 방법 |
JP6396854B2 (ja) * | 2015-06-02 | 2018-09-26 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
TWI625446B (zh) * | 2015-06-18 | 2018-06-01 | 德克薩斯大學體系董事會 | 用於抑制來自液體中的源的聲能的共振器、共振器陣列和雜訊消減系統 |
WO2018182657A1 (en) * | 2017-03-30 | 2018-10-04 | Intel Corporation | Compensation for temperature coefficient of resonant frequency using atomic layer deposition materials |
CN108365083B (zh) * | 2018-02-07 | 2022-03-08 | 济南晶正电子科技有限公司 | 用于声表面波器件的复合压电衬底的制造方法 |
FR3093511B1 (fr) * | 2019-03-05 | 2022-08-05 | Commissariat Energie Atomique | Procédé de réalisation d’un système micro-électro-mécanique réalisé à partir d’une couche piézoélectrique ou ferroélectrique reportée |
CN109981069B (zh) * | 2019-03-13 | 2022-03-15 | 电子科技大学 | 具有隔离层的薄膜体声波谐振器制备方法及体声波谐振器 |
CN111884616B (zh) * | 2020-07-23 | 2021-04-13 | 中国科学院上海微***与信息技术研究所 | 一种衬底基板/压电材料薄膜结构及其制备方法和应用 |
FR3132788B1 (fr) * | 2022-02-14 | 2024-01-05 | Soitec Silicon On Insulator | Procede de transfert d’une couche mince sur un substrat support |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5234562A (en) * | 1988-11-07 | 1993-08-10 | Matsushita Electric Industrial Co., Ltd. | Electroplating apparatus for coating a dielectric resonator |
US20030199105A1 (en) * | 2002-04-22 | 2003-10-23 | Kub Francis J. | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
US20050255234A1 (en) * | 2004-04-23 | 2005-11-17 | Atsuhiko Kanda | Method for manufacturing resonator |
US20070194863A1 (en) * | 2006-02-17 | 2007-08-23 | Kabushiki Kaisha Toshiba | Film bulk acoustic resonator and method of manufacturing same |
US20090127978A1 (en) * | 2007-11-19 | 2009-05-21 | Hitachi Media Electronics Co., Ltd. | Film bulk acoustic wave resonator, its fabrication method and film bulk acoustic wave resonator filter using the resonator |
US20100295635A1 (en) * | 2009-05-20 | 2010-11-25 | Eva Schubert | Terahertz Resonator |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS506158B1 (zh) * | 1970-07-08 | 1975-03-11 | ||
JPS5226664B2 (zh) * | 1972-02-10 | 1977-07-15 | ||
FR2715502B1 (fr) | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Structure présentant des cavités et procédé de réalisation d'une telle structure. |
FR2756847B1 (fr) | 1996-12-09 | 1999-01-08 | Commissariat Energie Atomique | Procede de separation d'au moins deux elements d'une structure en contact entre eux par implantation ionique |
KR20030039446A (ko) * | 2001-11-13 | 2003-05-22 | 삼성전자주식회사 | Fbar 제조방법 |
US7830074B2 (en) * | 2006-08-08 | 2010-11-09 | Hrl Laboratories, Llc | Integrated quartz oscillator on an active electronic substrate |
JP4149416B2 (ja) * | 2004-05-31 | 2008-09-10 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子およびフィルタならびにそれらの製造方法 |
JP4820609B2 (ja) * | 2004-09-10 | 2011-11-24 | パナソニック株式会社 | 圧電共振器を用いたフィルタモジュール、共用器及び通信機器並びにその製造方法 |
JP2006101005A (ja) * | 2004-09-28 | 2006-04-13 | Toshiba Corp | 薄膜圧電共振器、高周波回路実装体及び薄膜圧電共振器の製造方法 |
JP4707503B2 (ja) * | 2005-08-25 | 2011-06-22 | パナソニック株式会社 | 薄膜バルク音響共振器 |
JP2007213825A (ja) * | 2006-02-07 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池と、その負極活物質および負極、ならびにそれらの製造方法 |
TW200818691A (en) * | 2006-08-08 | 2008-04-16 | Hrl Lab Llc | An integrated quartz oscillator on an active electronic substrate |
JP2008252159A (ja) * | 2007-03-29 | 2008-10-16 | Ngk Insulators Ltd | ラダー型圧電フィルタ |
FR2921192B1 (fr) | 2007-09-17 | 2010-08-20 | Commissariat Energie Atomique | Lentille a immersion solide et procede de realisation associe |
JP5168568B2 (ja) * | 2008-09-01 | 2013-03-21 | Tdk株式会社 | 薄膜バルク波共振器 |
JP4743258B2 (ja) * | 2008-10-31 | 2011-08-10 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
FR2950197A1 (fr) | 2009-09-15 | 2011-03-18 | Commissariat Energie Atomique | Membrane piezoelectrique a actionnement optimise et procede de fabrication de la membrane |
FR2951014B1 (fr) | 2009-10-06 | 2011-11-25 | Commissariat Energie Atomique | Structure d'actionnement piezoelectrique comportant une jauge de contrainte piezoresistive integree et son procede de realisation |
FR2953647B1 (fr) | 2009-12-04 | 2011-11-25 | Commissariat Energie Atomique | Procede de realisation d'un resonateur acoustique a ondes de volumes de type fbar |
FR2962613B1 (fr) | 2010-07-06 | 2013-08-16 | Commissariat Energie Atomique | Dispositif d'adaptation d'impedance d'un composant comportant un filtre a impedance adaptable a base de materiau de type perovskite |
FR2964497B1 (fr) | 2010-09-03 | 2013-04-19 | Commissariat Energie Atomique | Capacité intégrée comprenant une couche d'isolation électrique en matériau de type perovskite amorphe et procédé de fabrication |
-
2010
- 2010-12-10 FR FR1060358A patent/FR2968861B1/fr not_active Expired - Fee Related
-
2011
- 2011-12-05 EP EP11191911.4A patent/EP2464006B1/fr active Active
- 2011-12-06 SG SG2011090834A patent/SG184621A1/en unknown
- 2011-12-08 US US13/314,844 patent/US8715517B2/en active Active
- 2011-12-09 CN CN201110462242.9A patent/CN102545814B/zh active Active
- 2011-12-09 KR KR1020110132303A patent/KR101910195B1/ko active IP Right Grant
- 2011-12-09 TW TW100145537A patent/TWI562412B/zh active
- 2011-12-09 JP JP2011270459A patent/JP6047789B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5234562A (en) * | 1988-11-07 | 1993-08-10 | Matsushita Electric Industrial Co., Ltd. | Electroplating apparatus for coating a dielectric resonator |
US20030199105A1 (en) * | 2002-04-22 | 2003-10-23 | Kub Francis J. | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
US20050255234A1 (en) * | 2004-04-23 | 2005-11-17 | Atsuhiko Kanda | Method for manufacturing resonator |
US20070194863A1 (en) * | 2006-02-17 | 2007-08-23 | Kabushiki Kaisha Toshiba | Film bulk acoustic resonator and method of manufacturing same |
US20090127978A1 (en) * | 2007-11-19 | 2009-05-21 | Hitachi Media Electronics Co., Ltd. | Film bulk acoustic wave resonator, its fabrication method and film bulk acoustic wave resonator filter using the resonator |
US20100295635A1 (en) * | 2009-05-20 | 2010-11-25 | Eva Schubert | Terahertz Resonator |
Also Published As
Publication number | Publication date |
---|---|
EP2464006B1 (fr) | 2018-05-30 |
CN102545814B (zh) | 2017-03-01 |
FR2968861A1 (fr) | 2012-06-15 |
KR101910195B1 (ko) | 2018-10-19 |
EP2464006A1 (fr) | 2012-06-13 |
US20120145667A1 (en) | 2012-06-14 |
SG184621A1 (en) | 2012-10-30 |
JP2012147423A (ja) | 2012-08-02 |
JP6047789B2 (ja) | 2016-12-21 |
US8715517B2 (en) | 2014-05-06 |
CN102545814A (zh) | 2012-07-04 |
TW201244197A (en) | 2012-11-01 |
KR20120065262A (ko) | 2012-06-20 |
FR2968861B1 (fr) | 2013-09-27 |
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