TWI562331B - Esd protection circuit - Google Patents
Esd protection circuitInfo
- Publication number
- TWI562331B TWI562331B TW102122659A TW102122659A TWI562331B TW I562331 B TWI562331 B TW I562331B TW 102122659 A TW102122659 A TW 102122659A TW 102122659 A TW102122659 A TW 102122659A TW I562331 B TWI562331 B TW I562331B
- Authority
- TW
- Taiwan
- Prior art keywords
- protection circuit
- esd protection
- esd
- circuit
- protection
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/669,409 US8853783B2 (en) | 2012-01-19 | 2012-11-05 | ESD protection circuit |
US13/803,091 US8847318B2 (en) | 2012-01-19 | 2013-03-14 | ESD protection circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201419494A TW201419494A (en) | 2014-05-16 |
TWI562331B true TWI562331B (en) | 2016-12-11 |
Family
ID=50489964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102122659A TWI562331B (en) | 2012-11-05 | 2013-06-26 | Esd protection circuit |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR20140058323A (en) |
CN (1) | CN103811485B (en) |
DE (1) | DE102013214132B4 (en) |
SG (1) | SG2013049408A (en) |
TW (1) | TWI562331B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9728531B2 (en) | 2013-03-13 | 2017-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostatic discharge device |
CN107564901B (en) * | 2016-06-30 | 2020-03-13 | 中芯国际集成电路制造(天津)有限公司 | LDMOS device with ESD protection function and layout thereof |
DE102016118921B4 (en) * | 2016-09-12 | 2020-08-06 | Taiwan Semiconductor Manufacturing Co. Ltd. | Improved ESD device |
CN110289257B (en) * | 2019-06-28 | 2021-09-14 | 湖南师范大学 | Bidirectional enhanced gate-controlled silicon controlled electrostatic protection device and manufacturing method thereof |
US11302687B2 (en) * | 2019-10-30 | 2022-04-12 | Globalfoundries Singapore Pte. Ltd. | Semiconductor device and method of forming the same |
US11476244B2 (en) | 2020-08-19 | 2022-10-18 | Globalfoundries Singapore Pte. Ltd. | Laterally-diffused metal-oxide-semiconductor devices for electrostatic discharge protection applications |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050285200A1 (en) * | 2004-06-29 | 2005-12-29 | Magnachip Semiconductor, Ltd. | Device for electrostatic discharge protection |
US20100171149A1 (en) * | 2009-01-06 | 2010-07-08 | Texas Instruments Incorporated | Symmetrical bi-directional semiconductor esd protection device |
US20120032270A1 (en) * | 2006-09-22 | 2012-02-09 | Texas Instruments Incorporated | Depletion mode field effect transistor for esd protection |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6730962B2 (en) | 2001-12-07 | 2004-05-04 | Texas Instruments Incorporated | Method of manufacturing and structure of semiconductor device with field oxide structure |
US7667241B1 (en) | 2006-09-26 | 2010-02-23 | Cypress Semiconductor Corporation | Electrostatic discharge protection device |
JP5546191B2 (en) * | 2009-09-25 | 2014-07-09 | セイコーインスツル株式会社 | Semiconductor device |
US8536648B2 (en) | 2011-02-03 | 2013-09-17 | Infineon Technologies Ag | Drain extended field effect transistors and methods of formation thereof |
US8853783B2 (en) | 2012-01-19 | 2014-10-07 | Globalfoundries Singapore Pte. Ltd. | ESD protection circuit |
-
2013
- 2013-06-26 TW TW102122659A patent/TWI562331B/en active
- 2013-06-26 SG SG2013049408A patent/SG2013049408A/en unknown
- 2013-07-18 DE DE102013214132.7A patent/DE102013214132B4/en active Active
- 2013-07-18 KR KR1020130084837A patent/KR20140058323A/en not_active Application Discontinuation
- 2013-07-19 CN CN201310306060.1A patent/CN103811485B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050285200A1 (en) * | 2004-06-29 | 2005-12-29 | Magnachip Semiconductor, Ltd. | Device for electrostatic discharge protection |
US20120032270A1 (en) * | 2006-09-22 | 2012-02-09 | Texas Instruments Incorporated | Depletion mode field effect transistor for esd protection |
US20100171149A1 (en) * | 2009-01-06 | 2010-07-08 | Texas Instruments Incorporated | Symmetrical bi-directional semiconductor esd protection device |
Also Published As
Publication number | Publication date |
---|---|
DE102013214132B4 (en) | 2022-03-10 |
TW201419494A (en) | 2014-05-16 |
KR20140058323A (en) | 2014-05-14 |
DE102013214132A1 (en) | 2014-05-08 |
CN103811485B (en) | 2017-03-01 |
SG2013049408A (en) | 2014-06-27 |
CN103811485A (en) | 2014-05-21 |
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