TWI560903B - - Google Patents

Info

Publication number
TWI560903B
TWI560903B TW104115597A TW104115597A TWI560903B TW I560903 B TWI560903 B TW I560903B TW 104115597 A TW104115597 A TW 104115597A TW 104115597 A TW104115597 A TW 104115597A TW I560903 B TWI560903 B TW I560903B
Authority
TW
Taiwan
Application number
TW104115597A
Other versions
TW201607076A (zh
Inventor
Kohei Miyoshi
Masashi Tsukihara
Original Assignee
Ushio Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Electric Inc filed Critical Ushio Electric Inc
Publication of TW201607076A publication Critical patent/TW201607076A/zh
Application granted granted Critical
Publication of TWI560903B publication Critical patent/TWI560903B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
TW104115597A 2014-07-02 2015-05-15 Ｌｅｄ元件 TW201607076A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014136930A JP5983684B2 (ja) 2014-07-02 2014-07-02 Ｌｅｄ素子

Publications (2)

Publication Number Publication Date
TW201607076A TW201607076A (zh) 2016-02-16
TWI560903B true TWI560903B (zh) 2016-12-01

Family

ID=55019220

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104115597A TW201607076A (zh) 2014-07-02 2015-05-15 Ｌｅｄ元件

Country Status (4)

Country Link
US (1) US9954138B2 (zh)
JP (1) JP5983684B2 (zh)
TW (1) TW201607076A (zh)
WO (1) WO2016002684A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6685278B2 (ja) * 2015-03-11 2020-04-22 パナソニック株式会社 窒化物半導体装置
CN105720144B (zh) * 2016-03-24 2021-09-24 晶能光电（江西）有限公司 一种硅衬底氮化物紫外led芯片结构及其实现方法
WO2019035274A1 (ja) * 2017-08-14 2019-02-21 ソニー株式会社 テンプレート基板、電子デバイス，発光デバイス，テンプレート基板の製造方法および電子デバイスの製造方法
CN116995153A (zh) 2017-11-07 2023-11-03 盖利姆企业私人有限公司 掩埋活化p-(Al,In)GaN层

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200947766A (en) * 2008-02-22 2009-11-16 Sumitomo Electric Industries Group-III nitride light-emitting device and method for manufacturing group-III nitride based semiconductor light-emitting device
US20140103391A1 (en) * 2011-04-15 2014-04-17 Mitsubishi Chemical Corporation Nitride light-emitting diode element and method of manufacturing same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6900465B2 (en) 1994-12-02 2005-05-31 Nichia Corporation Nitride semiconductor light-emitting device
US5777350A (en) 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JP2976951B2 (ja) 1994-12-02 1999-11-10 日亜化学工業株式会社 窒化物半導体発光ダイオードを備えた表示装置
JPH10270756A (ja) * 1997-03-27 1998-10-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置
TWI271877B (en) * 2002-06-04 2007-01-21 Nitride Semiconductors Co Ltd Gallium nitride compound semiconductor device and manufacturing method
JP2005209925A (ja) 2004-01-23 2005-08-04 Nichia Chem Ind Ltd 積層半導体基板
CN102959140B (zh) * 2010-04-30 2016-01-20 佳能安内华股份有限公司 外延膜形成方法、真空处理设备、半导体发光元件制造方法、半导体发光元件和照明装置
US20130146928A1 (en) * 2011-04-06 2013-06-13 Panasonic Corporation Semiconductor light-emitting device
JP5075298B1 (ja) * 2011-05-18 2012-11-21 パナソニック株式会社 窒化物系半導体発光素子およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200947766A (en) * 2008-02-22 2009-11-16 Sumitomo Electric Industries Group-III nitride light-emitting device and method for manufacturing group-III nitride based semiconductor light-emitting device
US20140103391A1 (en) * 2011-04-15 2014-04-17 Mitsubishi Chemical Corporation Nitride light-emitting diode element and method of manufacturing same

Also Published As

Publication number Publication date
JP2016015411A (ja) 2016-01-28
WO2016002684A1 (ja) 2016-01-07
US20170155013A1 (en) 2017-06-01
JP5983684B2 (ja) 2016-09-06
TW201607076A (zh) 2016-02-16
US9954138B2 (en) 2018-04-24

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