TWI560883B - Trench type power semiconductor device, wafer structure and fabrication method thereof - Google Patents
Trench type power semiconductor device, wafer structure and fabrication method thereofInfo
- Publication number
- TWI560883B TWI560883B TW103116571A TW103116571A TWI560883B TW I560883 B TWI560883 B TW I560883B TW 103116571 A TW103116571 A TW 103116571A TW 103116571 A TW103116571 A TW 103116571A TW I560883 B TWI560883 B TW I560883B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- power semiconductor
- type power
- fabrication method
- wafer structure
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103116571A TWI560883B (en) | 2014-05-09 | 2014-05-09 | Trench type power semiconductor device, wafer structure and fabrication method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103116571A TWI560883B (en) | 2014-05-09 | 2014-05-09 | Trench type power semiconductor device, wafer structure and fabrication method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201543686A TW201543686A (en) | 2015-11-16 |
TWI560883B true TWI560883B (en) | 2016-12-01 |
Family
ID=55221011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103116571A TWI560883B (en) | 2014-05-09 | 2014-05-09 | Trench type power semiconductor device, wafer structure and fabrication method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI560883B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI606519B (en) * | 2016-09-09 | 2017-11-21 | 帥群微電子股份有限公司 | Trench power semiconductor device and manufacturing method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1757117A (en) * | 2003-03-05 | 2006-04-05 | 先进模拟科技公司 | Trench power MOSFET with planarized gate bus |
CN102034712A (en) * | 2009-09-23 | 2011-04-27 | 万国半导体股份有限公司 | Direct contact in trench with three-mask shield gate process |
CN102254826A (en) * | 2010-05-18 | 2011-11-23 | 万国半导体股份有限公司 | Bi-grid oxide groove mosfet and three or four mask process with passage stop groove |
TW201336083A (en) * | 2012-02-28 | 2013-09-01 | Alpha & Omega Semiconductor | Method for making gate-oxide with step-graded thickness in trenched DMOS device for reduced gate-to-drain capacitance |
-
2014
- 2014-05-09 TW TW103116571A patent/TWI560883B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1757117A (en) * | 2003-03-05 | 2006-04-05 | 先进模拟科技公司 | Trench power MOSFET with planarized gate bus |
CN102034712A (en) * | 2009-09-23 | 2011-04-27 | 万国半导体股份有限公司 | Direct contact in trench with three-mask shield gate process |
CN102254826A (en) * | 2010-05-18 | 2011-11-23 | 万国半导体股份有限公司 | Bi-grid oxide groove mosfet and three or four mask process with passage stop groove |
TW201336083A (en) * | 2012-02-28 | 2013-09-01 | Alpha & Omega Semiconductor | Method for making gate-oxide with step-graded thickness in trenched DMOS device for reduced gate-to-drain capacitance |
Also Published As
Publication number | Publication date |
---|---|
TW201543686A (en) | 2015-11-16 |
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