TWI560853B - Cell contact structure - Google Patents

Cell contact structure

Info

Publication number
TWI560853B
TWI560853B TW104130371A TW104130371A TWI560853B TW I560853 B TWI560853 B TW I560853B TW 104130371 A TW104130371 A TW 104130371A TW 104130371 A TW104130371 A TW 104130371A TW I560853 B TWI560853 B TW I560853B
Authority
TW
Taiwan
Prior art keywords
contact structure
cell contact
cell
contact
Prior art date
Application number
TW104130371A
Other languages
Chinese (zh)
Other versions
TW201711169A (en
Inventor
Tieh-Chiang Wu
Neng-Tai Shih
Yaw-Wen Hu
Original Assignee
Inotera Memories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inotera Memories Inc filed Critical Inotera Memories Inc
Priority to TW104130371A priority Critical patent/TWI560853B/en
Priority to CN201610170103.1A priority patent/CN106549018B/en
Application granted granted Critical
Publication of TWI560853B publication Critical patent/TWI560853B/en
Publication of TW201711169A publication Critical patent/TW201711169A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
TW104130371A 2015-09-15 2015-09-15 Cell contact structure TWI560853B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW104130371A TWI560853B (en) 2015-09-15 2015-09-15 Cell contact structure
CN201610170103.1A CN106549018B (en) 2015-09-15 2016-03-23 Cell contact structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW104130371A TWI560853B (en) 2015-09-15 2015-09-15 Cell contact structure

Publications (2)

Publication Number Publication Date
TWI560853B true TWI560853B (en) 2016-12-01
TW201711169A TW201711169A (en) 2017-03-16

Family

ID=58227201

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104130371A TWI560853B (en) 2015-09-15 2015-09-15 Cell contact structure

Country Status (2)

Country Link
CN (1) CN106549018B (en)
TW (1) TWI560853B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107546226A (en) * 2017-09-29 2018-01-05 睿力集成电路有限公司 Memory and its manufacture method
CN110534515A (en) * 2018-05-24 2019-12-03 长鑫存储技术有限公司 Reduce the manufacturing method and semiconductor memory of unit contact deficiency

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201203521A (en) * 2010-07-15 2012-01-16 Hynix Semiconductor Inc Semiconductor device and method for fabricating the same
TW201316490A (en) * 2011-05-27 2013-04-16 Elpida Memory Inc Semiconductor device and method of forming the same
TW201501305A (en) * 2013-02-07 2015-01-01 Ps4 Luxco Sarl Semiconductor device and method of manufacturing the same
TW201501307A (en) * 2013-02-18 2015-01-01 Ps4 Luxco Sarl Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100474737B1 (en) * 2002-05-02 2005-03-08 동부아남반도체 주식회사 Dram fabrication capable of high integration and fabrication method
JP2013197551A (en) * 2012-03-22 2013-09-30 Toshiba Corp Semiconductor device and manufacturing method thereof
KR101929478B1 (en) * 2012-04-30 2018-12-14 삼성전자주식회사 Semiconductor Device Having a Buried Channel Array
TW201503366A (en) * 2013-07-08 2015-01-16 Anpec Electronics Corp Trench type semiconductor power device and fabrication method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201203521A (en) * 2010-07-15 2012-01-16 Hynix Semiconductor Inc Semiconductor device and method for fabricating the same
TW201316490A (en) * 2011-05-27 2013-04-16 Elpida Memory Inc Semiconductor device and method of forming the same
TW201501305A (en) * 2013-02-07 2015-01-01 Ps4 Luxco Sarl Semiconductor device and method of manufacturing the same
TW201501307A (en) * 2013-02-18 2015-01-01 Ps4 Luxco Sarl Semiconductor device

Also Published As

Publication number Publication date
CN106549018B (en) 2020-04-07
CN106549018A (en) 2017-03-29
TW201711169A (en) 2017-03-16

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