TWI560805B - Semiconductor device and method for fabricating the same - Google Patents
Semiconductor device and method for fabricating the sameInfo
- Publication number
- TWI560805B TWI560805B TW101133092A TW101133092A TWI560805B TW I560805 B TWI560805 B TW I560805B TW 101133092 A TW101133092 A TW 101133092A TW 101133092 A TW101133092 A TW 101133092A TW I560805 B TWI560805 B TW I560805B
- Authority
- TW
- Taiwan
- Prior art keywords
- fabricating
- same
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76289—Lateral isolation by air gap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
- H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/486,265 US9269609B2 (en) | 2012-06-01 | 2012-06-01 | Semiconductor isolation structure with air gaps in deep trenches |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201351565A TW201351565A (zh) | 2013-12-16 |
TWI560805B true TWI560805B (en) | 2016-12-01 |
Family
ID=49669192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101133092A TWI560805B (en) | 2012-06-01 | 2012-09-11 | Semiconductor device and method for fabricating the same |
Country Status (4)
Country | Link |
---|---|
US (2) | US9269609B2 (zh) |
KR (1) | KR101410147B1 (zh) |
CN (1) | CN103456768B (zh) |
TW (1) | TWI560805B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI814545B (zh) * | 2022-08-22 | 2023-09-01 | 華邦電子股份有限公司 | 半導體元件及其製造方法 |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015037166A1 (ja) * | 2013-09-11 | 2015-03-19 | パナソニックIpマネジメント株式会社 | 半導体装置 |
US9653477B2 (en) * | 2014-01-03 | 2017-05-16 | International Business Machines Corporation | Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming |
US9406559B2 (en) | 2014-07-03 | 2016-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd | Semiconductor structure and method for forming the same |
KR102317651B1 (ko) * | 2015-04-14 | 2021-10-27 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
US9711390B2 (en) * | 2015-05-21 | 2017-07-18 | Sandisk Technologies Llc | Shallow trench isolation trenches and methods for NAND memory |
US9607943B2 (en) * | 2015-06-11 | 2017-03-28 | International Business Machines Corporation | Capacitors |
TW202236685A (zh) * | 2015-10-30 | 2022-09-16 | 日商半導體能源研究所股份有限公司 | 電容器、半導體裝置、模組以及電子裝置的製造方法 |
US10164029B2 (en) * | 2015-12-18 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and manufacturing method thereof |
US9972633B2 (en) * | 2016-01-27 | 2018-05-15 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
US11211305B2 (en) * | 2016-04-01 | 2021-12-28 | Texas Instruments Incorporated | Apparatus and method to support thermal management of semiconductor-based components |
US10861796B2 (en) | 2016-05-10 | 2020-12-08 | Texas Instruments Incorporated | Floating die package |
TWI624003B (zh) * | 2016-08-17 | 2018-05-11 | 世界先進積體電路股份有限公司 | 半導體結構與其形成方法 |
US10243047B2 (en) * | 2016-12-08 | 2019-03-26 | Globalfoundries Inc. | Active and passive components with deep trench isolation structures |
US10043824B2 (en) * | 2016-12-15 | 2018-08-07 | Vanguard International Semiconductor Corporation | Semiconductor device including a vacuum gap and method for manufacturing the same |
US10074639B2 (en) | 2016-12-30 | 2018-09-11 | Texas Instruments Incorporated | Isolator integrated circuits with package structure cavity and fabrication methods |
US10256298B2 (en) * | 2017-02-02 | 2019-04-09 | Vanguard International Semiconductor Corporation | Semiconductor structure and method for forming the same |
US20180226292A1 (en) * | 2017-02-06 | 2018-08-09 | Globalfoundries Inc. | Trench isolation formation from the substrate back side using layer transfer |
US10056289B1 (en) | 2017-04-20 | 2018-08-21 | International Business Machines Corporation | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap |
US9922973B1 (en) * | 2017-06-01 | 2018-03-20 | Globalfoundries Inc. | Switches with deep trench depletion and isolation structures |
US10461152B2 (en) | 2017-07-10 | 2019-10-29 | Globalfoundries Inc. | Radio frequency switches with air gap structures |
US10833153B2 (en) * | 2017-09-13 | 2020-11-10 | Globalfoundries Inc. | Switch with local silicon on insulator (SOI) and deep trench isolation |
US10483153B2 (en) * | 2017-11-14 | 2019-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench isolation structure in semiconductor device |
US10910313B2 (en) * | 2017-11-16 | 2021-02-02 | Samsung Electronics Co., Ltd. | Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch |
US10224396B1 (en) | 2017-11-20 | 2019-03-05 | Globalfoundries Inc. | Deep trench isolation structures |
US10546937B2 (en) * | 2017-11-21 | 2020-01-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structures and methods for noise isolation in semiconductor devices |
CN115332153A (zh) | 2017-12-29 | 2022-11-11 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
US10446643B2 (en) | 2018-01-22 | 2019-10-15 | Globalfoundries Inc. | Sealed cavity structures with a planar surface |
US10720494B2 (en) * | 2018-01-22 | 2020-07-21 | Globalfoundries Inc. | Field-effect transistors with airgaps |
US11056382B2 (en) * | 2018-03-19 | 2021-07-06 | Globalfoundries U.S. Inc. | Cavity formation within and under semiconductor devices |
US11404536B2 (en) * | 2018-03-30 | 2022-08-02 | Intel Corporation | Thin-film transistor structures with gas spacer |
US10522390B1 (en) | 2018-06-21 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shallow trench isolation for integrated circuits |
US10672795B2 (en) * | 2018-06-27 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bulk semiconductor substrate configured to exhibit semiconductor-on-insulator behavior |
US10438843B1 (en) * | 2018-08-31 | 2019-10-08 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
US10825721B2 (en) * | 2018-10-23 | 2020-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Insulating cap on contact structure and method for forming the same |
US11410872B2 (en) | 2018-11-30 | 2022-08-09 | Globalfoundries U.S. Inc. | Oxidized cavity structures within and under semiconductor devices |
US10923577B2 (en) | 2019-01-07 | 2021-02-16 | Globalfoundries U.S. Inc. | Cavity structures under shallow trench isolation regions |
TWI685085B (zh) * | 2019-02-26 | 2020-02-11 | 華邦電子股份有限公司 | 記憶元件及其製造方法 |
US10971632B2 (en) * | 2019-06-24 | 2021-04-06 | Semiconductor Components Industries, Llc | High voltage diode on SOI substrate with trench-modified current path |
US11450601B2 (en) * | 2019-09-18 | 2022-09-20 | Micron Technology, Inc. | Assemblies comprising memory cells and select gates |
FR3101480B1 (fr) | 2019-09-30 | 2021-10-29 | St Microelectronics Tours Sas | Tranchées isolantes pour les circuits ESD |
US11127816B2 (en) | 2020-02-14 | 2021-09-21 | Globalfoundries U.S. Inc. | Heterojunction bipolar transistors with one or more sealed airgap |
US11164793B2 (en) * | 2020-03-23 | 2021-11-02 | International Business Machines Corporation | Reduced source/drain coupling for CFET |
CN113644048B (zh) * | 2020-04-27 | 2023-12-22 | 联华电子股份有限公司 | 半导体元件及其制造方法 |
US11183452B1 (en) * | 2020-08-12 | 2021-11-23 | Infineon Technologies Austria Ag | Transfering informations across a high voltage gap using capacitive coupling with DTI integrated in silicon technology |
US11114488B1 (en) * | 2020-09-25 | 2021-09-07 | Shenzhen Adaps Photonics Technology Co. LTD. | Image sensing devices with reflector arrays |
US11764258B2 (en) * | 2020-12-01 | 2023-09-19 | Globalfoundries U.S. Inc. | Airgap isolation structures |
US11798836B2 (en) * | 2021-06-17 | 2023-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor isolation structure and method of making the same |
US11881506B2 (en) | 2021-07-27 | 2024-01-23 | Globalfoundries U.S. Inc. | Gate structures with air gap isolation features |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7038289B2 (en) * | 2001-06-14 | 2006-05-02 | Stmicroelectronics Sa | Deep insulating trench |
US20110175205A1 (en) * | 2010-01-20 | 2011-07-21 | Renesas Electronics Corporation | Semiconductor device and manufacturing method thereof |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6104054A (en) * | 1998-05-13 | 2000-08-15 | Texas Instruments Incorporated | Space-efficient layout method to reduce the effect of substrate capacitance in dielectrically isolated process technologies |
US6406975B1 (en) | 2000-11-27 | 2002-06-18 | Chartered Semiconductor Manufacturing Inc. | Method for fabricating an air gap shallow trench isolation (STI) structure |
JP2003158180A (ja) * | 2001-11-26 | 2003-05-30 | Mitsubishi Electric Corp | トレンチ分離を有する半導体装置およびその製造方法 |
ITMI20021099A1 (it) * | 2002-05-22 | 2003-11-24 | St Microelectronics Srl | Struttura d'isolamento a dielettrico per l'integrazione di dispositivi elettronico a semiconduttore e relativo processo di realizzazione |
US7141086B2 (en) | 2002-06-03 | 2006-11-28 | Ricoh Company, Ltd. | Abrasive grain and method for producing it, polishing tool and method for producing it, grinding wheel and method for producing it, and polishing apparatus |
US6791155B1 (en) * | 2002-09-20 | 2004-09-14 | Integrated Device Technology, Inc. | Stress-relieved shallow trench isolation (STI) structure and method for forming the same |
KR100532727B1 (ko) | 2003-07-23 | 2005-11-30 | 동부아남반도체 주식회사 | 셀로우 트렌치 소자 분리막 제조 방법 |
KR100559990B1 (ko) | 2003-12-30 | 2006-03-13 | 동부아남반도체 주식회사 | 반도체 장치의 소자 분리체 및 그 형성방법 |
EP1589572B1 (fr) * | 2004-04-21 | 2020-03-11 | Nxp B.V. | Procédé de fabrication d'un circuit intégré comprenant l'élaboration de tranchées d'isolation creuses |
US7396732B2 (en) | 2004-12-17 | 2008-07-08 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Formation of deep trench airgaps and related applications |
US7723803B2 (en) * | 2005-03-07 | 2010-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bipolar device compatible with CMOS process technology |
DE102007020268B3 (de) * | 2007-04-30 | 2008-11-06 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement und Verfahren zum Verhindern der Ausbildung von elektrischen Kurzschlüssen aufgrund von Hohlräumen in der Kontaktzwischenschicht |
JP4594973B2 (ja) * | 2007-09-26 | 2010-12-08 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100903470B1 (ko) | 2007-11-27 | 2009-06-18 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조 방법 |
JP4560100B2 (ja) * | 2008-03-24 | 2010-10-13 | 株式会社東芝 | 半導体装置 |
US7842577B2 (en) * | 2008-05-27 | 2010-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Two-step STI formation process |
JP4956500B2 (ja) * | 2008-07-22 | 2012-06-20 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
KR20100025107A (ko) | 2008-08-27 | 2010-03-09 | 크로스텍 캐피탈, 엘엘씨 | 에어갭을 구비한 샐로우 트렌치 소자분리구조, 이를 이용한시모스 이미지 센서 및 그 제조방법 |
KR20100102982A (ko) | 2009-03-12 | 2010-09-27 | 삼성전자주식회사 | 반도체 장치 |
JP5729745B2 (ja) * | 2009-09-15 | 2015-06-03 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR20110117326A (ko) * | 2010-04-21 | 2011-10-27 | 매그나칩 반도체 유한회사 | 반도체 장치 및 그 제조방법 |
KR101559345B1 (ko) * | 2010-08-26 | 2015-10-15 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
US8609508B2 (en) * | 2010-12-08 | 2013-12-17 | Stmicroelectronics, Inc. | Method of fabricating an integrated circuit having a strain inducing hollow trench isolation region |
KR20130015167A (ko) * | 2011-08-02 | 2013-02-13 | 삼성전자주식회사 | 에어 갭을 갖는 반도체 소자 및 그 제조 방법 |
-
2012
- 2012-06-01 US US13/486,265 patent/US9269609B2/en active Active
- 2012-09-11 TW TW101133092A patent/TWI560805B/zh active
- 2012-10-18 KR KR1020120116136A patent/KR101410147B1/ko active IP Right Grant
-
2013
- 2013-03-13 CN CN201310080401.8A patent/CN103456768B/zh active Active
-
2016
- 2016-02-22 US US15/049,646 patent/US10049941B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7038289B2 (en) * | 2001-06-14 | 2006-05-02 | Stmicroelectronics Sa | Deep insulating trench |
US20110175205A1 (en) * | 2010-01-20 | 2011-07-21 | Renesas Electronics Corporation | Semiconductor device and manufacturing method thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI814545B (zh) * | 2022-08-22 | 2023-09-01 | 華邦電子股份有限公司 | 半導體元件及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20130135709A (ko) | 2013-12-11 |
US20160172250A1 (en) | 2016-06-16 |
US20130320459A1 (en) | 2013-12-05 |
CN103456768A (zh) | 2013-12-18 |
CN103456768B (zh) | 2016-05-04 |
US9269609B2 (en) | 2016-02-23 |
TW201351565A (zh) | 2013-12-16 |
KR101410147B1 (ko) | 2014-06-19 |
US10049941B2 (en) | 2018-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI560805B (en) | Semiconductor device and method for fabricating the same | |
SG11201504825RA (en) | Semiconductor device and method for manufacturing the same | |
EP2913854A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
EP2786404A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
SG11201504734VA (en) | Semiconductor device and method for manufacturing the same | |
HK1205357A1 (zh) | 半導體器件和用於製造其的方法 | |
SG11201503639YA (en) | Semiconductor device and manufacturing method thereof | |
EP2816598A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF | |
HK1198303A1 (zh) | 半導體裝置和半導體裝置的製造方法 | |
EP2833404A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | |
TWI562285B (en) | Semiconductor device and method for manufacturing the same | |
EP2843707A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | |
EP2833405A4 (en) | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF | |
SG10201406149PA (en) | Semiconductor Device And Method For Manufacturing The Same | |
EP2806461A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME | |
EP2858111A4 (en) | MANUFACTURING METHOD FOR IMAGING DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR ELEMENT | |
EP2854174A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
EP2793267A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | |
EP2802005A4 (en) | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF | |
TWI563540B (en) | Semiconductor device manufacturing method | |
HK1210869A1 (zh) | 半導體器件及其製造方法 | |
EP2860760A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
EP2913843A4 (en) | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | |
EP2851938A4 (en) | SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR | |
GB201213673D0 (en) | Semiconductor device and fabrication method |