TWI560779B - Method and apparatus for selective nitridation process - Google Patents

Method and apparatus for selective nitridation process

Info

Publication number
TWI560779B
TWI560779B TW101125839A TW101125839A TWI560779B TW I560779 B TWI560779 B TW I560779B TW 101125839 A TW101125839 A TW 101125839A TW 101125839 A TW101125839 A TW 101125839A TW I560779 B TWI560779 B TW I560779B
Authority
TW
Taiwan
Prior art keywords
nitridation process
selective nitridation
selective
nitridation
Prior art date
Application number
TW101125839A
Other languages
English (en)
Other versions
TW201308442A (zh
Inventor
Matthew S Rogers
Roger Curtis
Lara Hawrylchak
Ken Kaung Lai
Bernard L Hwang
Jeffery Tobin
Christopher Olsen
Malcolm J Bevan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201308442A publication Critical patent/TW201308442A/zh
Application granted granted Critical
Publication of TWI560779B publication Critical patent/TWI560779B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3211—Nitridation of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Plasma Technology (AREA)
TW101125839A 2011-08-10 2012-07-18 Method and apparatus for selective nitridation process TWI560779B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161522129P 2011-08-10 2011-08-10
US13/536,443 US10049881B2 (en) 2011-08-10 2012-06-28 Method and apparatus for selective nitridation process

Publications (2)

Publication Number Publication Date
TW201308442A TW201308442A (zh) 2013-02-16
TWI560779B true TWI560779B (en) 2016-12-01

Family

ID=47668782

Family Applications (4)

Application Number Title Priority Date Filing Date
TW107139288A TWI703643B (zh) 2011-08-10 2012-07-18 選擇性氮化製程所用的方法與設備
TW101125839A TWI560779B (en) 2011-08-10 2012-07-18 Method and apparatus for selective nitridation process
TW105133491A TWI585865B (zh) 2011-08-10 2012-07-18 選擇性氮化製程所用的方法與設備
TW106113245A TWI645475B (zh) 2011-08-10 2012-07-18 選擇性氮化製程所用的方法與設備

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW107139288A TWI703643B (zh) 2011-08-10 2012-07-18 選擇性氮化製程所用的方法與設備

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW105133491A TWI585865B (zh) 2011-08-10 2012-07-18 選擇性氮化製程所用的方法與設備
TW106113245A TWI645475B (zh) 2011-08-10 2012-07-18 選擇性氮化製程所用的方法與設備

Country Status (6)

Country Link
US (3) US10049881B2 (zh)
JP (1) JP6049720B2 (zh)
KR (2) KR102196413B1 (zh)
CN (3) CN103718278B (zh)
TW (4) TWI703643B (zh)
WO (1) WO2013022530A1 (zh)

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US20150020848A1 (en) * 2013-07-19 2015-01-22 Lam Research Corporation Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning
US20160042916A1 (en) * 2014-08-06 2016-02-11 Applied Materials, Inc. Post-chamber abatement using upstream plasma sources
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
CN107403717B (zh) * 2016-04-28 2023-07-18 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计
US10510545B2 (en) 2016-06-20 2019-12-17 Applied Materials, Inc. Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
US10103027B2 (en) 2016-06-20 2018-10-16 Applied Materials, Inc. Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
JP2020517103A (ja) * 2017-04-10 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 遠隔窒素ラジカル源によって可能となる高堆積速度高品質の窒化ケイ素
US10847337B2 (en) * 2018-01-24 2020-11-24 Applied Materials, Inc. Side inject designs for improved radical concentrations
TWI811284B (zh) * 2018-01-24 2023-08-11 美商應用材料股份有限公司 腔室入口組件、入口構件及包括此腔室入口組件的基板處理系統
USD924825S1 (en) 2018-01-24 2021-07-13 Applied Materials, Inc. Chamber inlet
US10636626B2 (en) * 2018-01-25 2020-04-28 Applied Materials, Inc. Dogbone inlet cone profile for remote plasma oxidation chamber
KR102610827B1 (ko) * 2018-12-20 2023-12-07 어플라이드 머티어리얼스, 인코포레이티드 개선된 가스 유동을 처리 챔버의 처리 용적에 공급하기 위한 방법 및 장치
WO2021150625A1 (en) 2020-01-23 2021-07-29 Applied Materials, Inc. Method of cleaning a structure and method of depositiing a capping layer in a structure
US20220165547A1 (en) * 2020-11-24 2022-05-26 Applied Materials, Inc. Novel and effective homogenize flow mixing design
KR20240090966A (ko) * 2021-10-26 2024-06-21 어플라이드 머티어리얼스, 인코포레이티드 조정가능한 질화를 이용한 플라즈마 처리
US20240047185A1 (en) * 2022-08-03 2024-02-08 Applied Materials, Inc. Shared rps clean and bypass delivery architecture

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Also Published As

Publication number Publication date
KR102196413B1 (ko) 2020-12-29
KR20190086049A (ko) 2019-07-19
CN105679633B (zh) 2019-03-15
WO2013022530A1 (en) 2013-02-14
US11581408B2 (en) 2023-02-14
US10950698B2 (en) 2021-03-16
US20210202702A1 (en) 2021-07-01
CN106098551A (zh) 2016-11-09
TWI645475B (zh) 2018-12-21
TW201308442A (zh) 2013-02-16
TWI703643B (zh) 2020-09-01
US20190088485A1 (en) 2019-03-21
CN105679633A (zh) 2016-06-15
TWI585865B (zh) 2017-06-01
TW201711109A (zh) 2017-03-16
US20130040444A1 (en) 2013-02-14
TW201921514A (zh) 2019-06-01
CN103718278B (zh) 2016-07-06
CN106098551B (zh) 2019-08-16
US10049881B2 (en) 2018-08-14
TW201727770A (zh) 2017-08-01
JP2014527300A (ja) 2014-10-09
JP6049720B2 (ja) 2016-12-21
CN103718278A (zh) 2014-04-09
KR20140050073A (ko) 2014-04-28
KR102001245B1 (ko) 2019-07-17

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