TWI554628B - Separated sputtering target - Google Patents
Separated sputtering target Download PDFInfo
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- TWI554628B TWI554628B TW105105444A TW105105444A TWI554628B TW I554628 B TWI554628 B TW I554628B TW 105105444 A TW105105444 A TW 105105444A TW 105105444 A TW105105444 A TW 105105444A TW I554628 B TWI554628 B TW I554628B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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Description
本發明關於一種濺射靶件（sputtering target）。特別是關於接合於背襯板或背襯管之陶瓷製之分割的濺射靶件。The present invention relates to a sputtering target. In particular, it relates to a split sputtering target made of ceramic bonded to a backing plate or a backing tube.
用以形成氧化物半導體薄膜之靶件部材，由於為陶瓷製，故難以製造大面積的靶件部材。然而，受濺射之氧化物半導體薄膜之面積有逐漸變大的傾向。因此，濺射靶件可藉由將多個靶件部材接合於背襯板或背襯管（以下單純稱之為「基材」），而對應增加受濺射之氧化物半導體薄膜之面積。Since the target member for forming the oxide semiconductor thin film is made of ceramic, it is difficult to manufacture a large-area target member. However, the area of the oxide semiconductor thin film to be sputtered tends to become gradually larger. Therefore, the sputtering target can increase the area of the sputtered oxide semiconductor film by bonding a plurality of target members to a backing plate or a backing tube (hereinafter simply referred to as "substrate").
一般而言，將多個靶件部材接合於基材之場合中，多個靶件部材相互之間開設指定間隔。若靶件部材以無間隙之配置方式接合於背襯板或背襯管時，由於濺射中之熱會導致靶件部材伸縮，因此靶件部材恐有相互碰撞等情形而恐發生破裂或缺損。另一方面，靶件部材間之間隙本來不應存在於受濺射之靶件部材。因此，基材之構成材料會發生受到濺射等問題，而存在有無法形成預計成分之薄膜之問題。In general, when a plurality of target members are joined to a substrate, a plurality of target members are opened at a predetermined interval. If the target member is joined to the backing plate or the backing tube in a gapless arrangement, since the heat of the sputtering causes the target member to expand and contract, the target member may collide with each other and may be broken or damaged. . On the other hand, the gap between the target members should not be present in the sputtered target member. Therefore, the constituent material of the substrate is subject to problems such as sputtering, and there is a problem that a film which does not form a desired component exists.
先前技術文獻1（日本專利第4961515號公報）揭示以下技術內容。於多個靶件部材接合於基材之濺射靶件中，將低熔點焊料以位於間隔（間隙） 之深度之10%～70%之厚度覆蓋於靶件部件相互之間隙，藉此防止基材之構成材料受到濺射。然而，此先前技術文獻1之技術中，由於低熔點焊料以深度之10%～70%之厚度存在於位於間隔（間隙）中，結果導致低熔點焊料存在至接近靶件部材之表面。以此狀態存在之低熔點焊料剝落而露出靶件部材相互之間隙中之基材之場合中，基材之構成材料仍更易於受到濺射。因此，記載於先前技術文獻1之技術無法充分解決形成預計成分之薄膜之課題。The prior art document 1 (Japanese Patent No. 4961515) discloses the following technical contents. In the sputtering target in which the plurality of target members are bonded to the substrate, the low melting point solder is covered with a gap of 10% to 70% of the depth of the gap (gap) to the gap between the target members, thereby preventing the base The constituent material of the material is sputtered. However, in the technique of the prior art document 1, since the low melting point solder exists in the interval (gap) at a thickness of 10% to 70% of the depth, the result is that the low melting point solder exists to the surface close to the target member. In the case where the low melting point solder existing in this state is peeled off to expose the substrate in the gap between the target members, the constituent material of the substrate is still more susceptible to sputtering. Therefore, the technique described in the prior art document 1 cannot sufficiently solve the problem of forming a film of a predetermined component.
本發明之課題，為於多個靶件部材接合於基材而得到之分割的濺射靶件中，令自靶件部材之間之間隙露出之構成材料不受濺射，故存在於靶件部材相互之間隙之填充部材之構成材料不僅防止受到濺射，還能夠形成預計成分之薄膜。An object of the present invention is to form a sputtering target in which a plurality of target members are joined to a substrate, and the constituent material exposed from the gap between the target members is not sputtered, so that the target member is present in the target member. The constituent material of the filling member in which the members are separated from each other not only prevents sputtering but also forms a film of a desired composition.
為了解決上述課題，經過本案發明者們深入研究的結果，發展出以下結構之分割的濺射靶件。換言之，基材一般由鈦（Ti）或銅（Cu）等材料構成。鈦或銅與燒結體之濕潤性較差。然而，以噴砂（sandblasting）而粗糙化基材表面後，以銦或銦合金做為接合材接合基材及燒結體製之靶件部材時可提升黏著性。於此，藉由噴砂而於靶件部材相互之間隙（以下稱之為「分割部」）中之基材表面形成凹凸。因此，於背襯板或背襯管之對應於分割部之區域之表面中，藉由利用凹凸面而調整銦或銦合金之區域，申請人除了能夠調整基材之構成材料，還為了令基材之構成材料不受濺射而於基材之表面覆蓋填充材料，藉以能夠減少受到濺射之可能性。In order to solve the above problems, as a result of intensive studies by the inventors of the present invention, a sputtering target having the following structure has been developed. In other words, the substrate is generally composed of a material such as titanium (Ti) or copper (Cu). The wettability of titanium or copper and the sintered body is poor. However, when the surface of the substrate is roughened by sandblasting, the adhesion can be improved when the indium or indium alloy is used as the bonding material of the bonding material and the target member of the sintering system. Here, the surface of the base material in the gap between the target members (hereinafter referred to as "divided portion") is formed into irregularities by sand blasting. Therefore, in the surface of the region of the backing plate or the backing tube corresponding to the divided portion, by adjusting the region of the indium or indium alloy by using the uneven surface, the applicant can adjust the constituent material of the substrate in addition to the base material. The constituent material of the material is not sputtered and is covered with a filler on the surface of the substrate, whereby the possibility of being sputtered can be reduced.
換言之，對應於所有分割部之位置之基材部分，存在於與靶件部材相比深於靶件部材之厚度分量之位置。因此受到濺射之可能性小於靶材部件。於此，基材之對應於分割部之區域之凹凸面之主要於凹部內存在有銦或銦合金，藉由銦或銦合金存在於與基材之表面幾乎等高（與基材形成凹凸部前之基材表面幾乎等高，或者與基材之凹凸部之凸部幾乎等高）之範圍內，而不僅能夠防止背襯板或背襯管之構成材料受到濺射，還因用以令基材之構成材料不受濺射而設置之銦或銦合金本身，而能夠減少受到濺射之可能性。In other words, the portion of the substrate corresponding to the position of all the divided portions exists at a position deeper than the thickness of the target member than the target member. Therefore, the possibility of being sputtered is less than that of the target member. Here, the uneven surface of the region corresponding to the divided portion of the substrate mainly contains indium or an indium alloy in the concave portion, and the indium or indium alloy is present on the surface of the substrate to be almost equal (the uneven portion is formed with the substrate). The surface of the front substrate is almost equal in height, or is almost equal to the convex portion of the uneven portion of the substrate, and not only can prevent the constituent material of the backing plate or the backing tube from being sputtered, but also The constituent material of the substrate is not affected by the indium or indium alloy itself provided by sputtering, and the possibility of being sputtered can be reduced.
更甚者，由於銦或銦合金主要存在於基材之凹凸部之凹部，因基材與銦或銦合金之接合面之表面積大於覆蓋基材表面之銦或銦合金之表面積，銦或銦合金能夠穩固地接合於基材。因此，藉由存在於基材之對應於分割部之區域之銦或銦合金受到濺射，銦或銦合金被挖起而使銦或銦合金之厚度變薄，故而能夠防止自基材脫落。Moreover, since the indium or indium alloy is mainly present in the concave portion of the uneven portion of the substrate, the surface area of the joint surface of the substrate and the indium or indium alloy is larger than the surface area of the indium or indium alloy covering the surface of the substrate, indium or indium alloy. It can be firmly bonded to the substrate. Therefore, since indium or an indium alloy which is present in the region of the substrate corresponding to the divided portion is sputtered, the indium or indium alloy is dug and the thickness of the indium or indium alloy is reduced, so that it is possible to prevent the substrate from falling off.
根據本發明提供一種分割的濺射靶材，於多個靶件部材接合於基材而得到之分割的濺射靶件中，藉由多個靶件部材配置成相互以指定間隔放置於基材之表面而形成分割部，基材之表面對應於此分割部之區域具有凹凸部，銦或銦合金存在於凹凸部之表面，以EPMA分析對應於基材分割部之區域表面時，前述銦或銦合金存在之區域相對於觀察面積之面積比例為40%以上。According to the present invention, a divided sputtering target is provided in which a plurality of target members are disposed so as to be placed on a substrate at a predetermined interval in a divided sputtering target obtained by bonding a plurality of target members to a substrate. a surface is formed on the surface, and a surface of the substrate has a concave-convex portion corresponding to the region of the divided portion, and indium or an indium alloy is present on the surface of the uneven portion, and the indium or the surface of the region corresponding to the divided portion of the substrate is analyzed by EPMA. The ratio of the area where the indium alloy exists to the observed area is 40% or more.
以EPMA分析對應於基材分割部之區域表面時，銦合金存在之區域相對於觀察面積之面積比例為40%以上且為80%以下。When the surface of the region corresponding to the substrate divided portion is analyzed by EPMA, the ratio of the area of the region where the indium alloy exists to the observed area is 40% or more and 80% or less.
指定間隔可為0.2 mm以上0.4 mm。The specified interval can be 0.2 mm or more and 0.4 mm.
銦或銦合金含有90%以上之銦。Indium or an indium alloy contains more than 90% of indium.
一般而言，接合有多個靶件部材之基材含有鈦或銅。然而，若構成基材之元素與靶件部材之成分相異，採用本發明之分割的濺射靶件亦可有效。因此，構成基材之元素並非限定於鈦或銅。In general, a substrate to which a plurality of target members are bonded contains titanium or copper. However, if the elements constituting the substrate are different from the components of the target member, the use of the divided sputtering target of the present invention can also be effective. Therefore, the elements constituting the substrate are not limited to titanium or copper.
根據本發明，多個靶件部材接合於基材而得到之分割的濺射靶件中，由於自分割部露出之基材之構成材料或基材之構成材料，故存在於對應基材分割部之區域之填充部材之構成材料能夠防止受到濺射的同時，還能夠形成預計成分之薄膜。According to the present invention, in the sputtering target obtained by joining the plurality of target members to the substrate, the constituent material of the substrate exposed from the divided portion or the constituent material of the substrate is present in the corresponding substrate division portion. The constituent material of the filling member in the region can prevent the sputtering of the material and form a film of the intended composition.
以下，將一邊參照圖式說明關於本發明之多個靶件部材接合於基材而得到之分割的濺射靶件及其製造方法。然而，本發明之多個靶件部材接合於基材而得到之分割的濺射靶材及其製造方法能夠以多種相異之態樣實施。因此，並非限定解釋成以下所例示之實施型態之記載內容。而且，以本實施之型態參照之圖面中，相同部分或具有相同功能之部分將附上相同符號，且將省略如此重覆之說明。Hereinafter, a sputtering target obtained by joining a plurality of target members of the present invention to a substrate and a method for producing the same will be described with reference to the drawings. However, the sputtering target obtained by joining a plurality of target members of the present invention to a substrate and the method for producing the same can be implemented in various different aspects. Therefore, the description of the embodiments exemplified below is not limited. In the drawings, the same portions or portions having the same functions will be denoted by the same reference numerals, and the description thereof will be omitted.
圖1為用以說明使用接合材3結合圓筒形濺射用靶件部材1及背襯管（backing tube）4之接合工程之概略圖。圖2A及圖2B繪示關於本發明之一實施型態之分割的濺射靶件之背襯管4之表面之概略圖。以下將參照圖1、圖2A及圖2B說明採取本發明之分割的濺射靶件。FIG. 1 is a schematic view for explaining a joining process of joining the cylindrical sputtering target member 1 and the backing tube 4 using the bonding material 3 . 2A and 2B are schematic views of the surface of the backing tube 4 of the sputter target of the divided embodiment of the present invention. The sputter target to which the division of the present invention is taken will be described below with reference to Figs. 1, 2A and 2B.
準備多個圓筒形濺射用靶件部材1、背襯管4及接合材3。關於圓筒形濺射用靶件部材1及背襯管4之外徑、內徑及長度並未特別限制。然而，圓筒形濺射用靶件部材1之內徑及背襯管4之外徑，定義出形成於圓筒形濺射用靶件部材1及背襯管4之間之空腔（cavity）之幅寬，亦定義出填充於空腔之接合材3之厚度。因此，可調整圓筒形濺射用靶件部材1之內徑及背襯管4之外徑，以令接合材3之厚度達到所預計之厚度。A plurality of cylindrical sputtering target members 1, the backing tube 4, and the bonding material 3 are prepared. The outer diameter, inner diameter, and length of the target portion 1 and the backing tube 4 for cylindrical sputtering are not particularly limited. However, the inner diameter of the cylindrical sputtering target member 1 and the outer diameter of the backing tube 4 define a cavity formed between the cylindrical sputtering target member 1 and the backing tube 4 (cavity) The width of the material also defines the thickness of the bonding material 3 filled in the cavity. Therefore, the inner diameter of the cylindrical sputtering target member 1 and the outer diameter of the backing tube 4 can be adjusted so that the thickness of the bonding material 3 reaches the desired thickness.
圓筒形濺射用靶件部材1可由陶瓷燒結體製成，例如可為氧化銦錫製成之ITO燒結體（Indium Tin Oxide）、氧化鋁鋅製成之AZO燒結體（Aluminum Zinc Oxide）、氧化銦鋅製成之IZO燒結體（Indium Zinc Oxide）、二氧化鈦（TiO2）等之燒結體。然而，採用本發明之濺射靶件之濺射用靶件部材若為陶瓷燒結體，則並非限定於上述成分。The cylindrical sputtering target member 1 may be made of a ceramic sintered body, for example, an ITO sintered body made of indium tin oxide (Indium Tin Oxide) or an AZO sintered body made of aluminum oxide zinc (Aluminum Zinc Oxide). A sintered body of an IZO sintered body (Indium Zinc Oxide) made of indium zinc oxide or titanium dioxide (TiO2). However, the sputtering target member using the sputtering target of the present invention is not limited to the above components unless it is a ceramic sintered body.
背襯管4雖能夠使用各種材質，亦能夠舉例為銅（Cu）、鈦（Ti）或多數含有此些元素之金屬。Although various materials can be used for the backing tube 4, copper (Cu), titanium (Ti), or a metal containing many of these elements can also be exemplified.
接合材3能夠舉例為低熔點之銦（In）或含銦之銦合金焊料材。銦合金之場合中，考慮熔點及熱傳導性時，可為含有90%以上之銦之銦合金。The bonding material 3 can be exemplified by a low melting point indium (In) or an indium containing indium alloy solder material. In the case of an indium alloy, in the case of melting point and thermal conductivity, an indium alloy containing 90% or more of indium may be used.
首先，利用對於銦之濕潤性佳之氧化鋁、氧化鋯、碳化矽等，於所準備之背襯管4之表面進行噴砂而使其粗糙化，藉以形成凹凸。凹凸之形狀雖並未特別限制，其表面粗糙度以算數平均粗糙度（Ra）計算可為1.8 μm以上且為5 μm以下。算數平均粗糙度（Ra）若大於5 μm，接合材3難以均勻地***圓筒形濺射用靶件部材1及背襯管4之間，若是要均勻地***則會產生耗費時間等問題。另一方面，算數平均粗糙度（Ra）若小於1.8 μm，與覆蓋背襯管4之表面之銦或銦合金之表面積相比，銦或銦合金之結合面無法充分擴大，銦或銦合金於濺射時恐發生脫落之情形。First, the surface of the prepared backing tube 4 is sandblasted and roughened by using alumina, zirconia, tantalum carbide or the like which is excellent in wettability of indium, thereby forming irregularities. The shape of the unevenness is not particularly limited, and the surface roughness thereof may be 1.8 μm or more and 5 μm or less in terms of arithmetic mean roughness (Ra). When the arithmetic mean roughness (Ra) is more than 5 μm, it is difficult for the bonding material 3 to be uniformly inserted between the cylindrical sputtering target member 1 and the backing tube 4, and if it is to be uniformly inserted, it takes time and the like. On the other hand, if the arithmetic mean roughness (Ra) is less than 1.8 μm, the bonding surface of the indium or indium alloy cannot be sufficiently enlarged compared with the surface area of the indium or indium alloy covering the surface of the backing tube 4, and the indium or indium alloy is It is feared that it will fall off during sputtering.
接下來，將多個圓筒形濺射用靶件部材1配置成各個中心軸一致而固定於背襯管4。相鄰之圓筒形濺射用靶件部材1之間使用環狀之鐵氟龍（註冊商標）之間隔件（圖1之符號2）以確保指定間隙。Next, a plurality of cylindrical sputtering target members 1 are placed so that the respective central axes are aligned and fixed to the backing tube 4. A ring-shaped Teflon (registered trademark) spacer (symbol 2 of Fig. 1) is used between adjacent cylindrical sputtering target members 1 to secure a specified gap.
圓筒形濺射用靶件部材1相互之間（間隙）可為0.2 mm以上且為0.4 mm以下。若小於0.2 mm，則因圓筒形濺射用靶件部材1會於濺射時發生熱膨脹，圓筒形濺射用靶件部材1會相互撞擊，因而成為破裂或缺損之原因。另一方面，若大於0.4 mm，會提高未存在圓筒形濺射用靶件部材1之區域於濺射時受到濺射之可能性，故而產生問題。The cylindrical sputtering target members 1 may have a gap (gap) of 0.2 mm or more and 0.4 mm or less. When it is less than 0.2 mm, the cylindrical sputtering target member 1 thermally expands during sputtering, and the cylindrical sputtering target member 1 collides with each other, which causes cracking or chipping. On the other hand, when it is larger than 0.4 mm, there is a possibility that the region where the cylindrical sputtering target member 1 is not present is sputtered during sputtering, which causes a problem.
圓筒形濺射用靶件部材1之內徑及背襯管4所形成之空腔，定義出接合材3之厚度。圓筒形濺射用靶件部材1之內徑及背襯管4所形成之空腔可為0.5 mm～2.0 mm。若小於0.5 mm，液態之接合材3難以流動，而會引起接合不良。另一方面，若大於2.0 mm，則會引起熱傳導率變差，且可能成為濺射時異常放電等之原因。The inner diameter of the cylindrical sputtering target member 1 and the cavity formed by the backing tube 4 define the thickness of the bonding material 3. The inner diameter of the cylindrical sputtering target member 1 and the cavity formed by the backing tube 4 may be 0.5 mm to 2.0 mm. If it is less than 0.5 mm, the liquid bonding material 3 is difficult to flow, which may cause poor bonding. On the other hand, when it is larger than 2.0 mm, the thermal conductivity is deteriorated, and it may cause abnormal discharge during sputtering or the like.
接下來，使用加熱器（圖未繪示）將圓筒形濺射用靶件部材1及背襯管4加熱至皆為攝氏157度以上，且令熔融之接合材3流入圓筒形濺射用靶件部材1之內周面及背襯管4之外周面之間。此時，保持攝氏157度以上，再藉由緩慢降低溫度以固化接合材3，進而將圓筒形濺射用靶件部材1接合於背襯管4。Next, the cylindrical sputtering target member 1 and the backing tube 4 are heated to a temperature of 157 degrees Celsius or more using a heater (not shown), and the molten bonding material 3 is caused to flow into the cylindrical sputtering. The inner peripheral surface of the target member 1 and the outer peripheral surface of the backing tube 4 are used. At this time, the bonding material 3 is cured by gradually decreasing the temperature while maintaining the temperature of 157 degrees Celsius or more, and the cylindrical sputtering target member 1 is joined to the backing tube 4.
以上述方法將圓筒形濺射用靶件部材1接合於背襯管4之後，去除插在圓筒形濺射用靶件部材1相互之間（分割部）之間隔件2。即使***了間隔件2，接合材3亦可能侵入分割部。因此接下來，將進行去除附著於分割部之底部（背襯管4之表面對應於分割部之區域）之接合材3之作業。After the cylindrical sputtering target member 1 is joined to the backing tube 4 by the above method, the spacer 2 inserted between the cylindrical sputtering target members 1 (divided portion) is removed. Even if the spacer 2 is inserted, the bonding material 3 may intrude into the divided portion. Therefore, next, the work of removing the bonding material 3 adhering to the bottom of the divided portion (the region of the surface of the backing tube 4 corresponding to the divided portion) will be performed.
於背襯管4升溫至攝氏100度～攝氏120度左右之狀態下，進行去除附著於分割部之底部之接合材3之一部分之作業。根據本發明，由於附著於分割部之底部之接合材3需要有至少一部分殘留於形成於背襯管4之凹凸之凹部，故可使用由具有某種程度上之耐熱性之硬質塑膠製作而成之治具去除附著於分割部之底部之接合材3。When the backing pipe 4 is heated up to a temperature of about 100 degrees Celsius to about 120 degrees Celsius, an operation of removing a part of the bonding material 3 adhering to the bottom of the divided portion is performed. According to the present invention, since the bonding material 3 attached to the bottom of the divided portion needs to have at least a part of the concave portion formed in the unevenness of the backing tube 4, it can be made of a hard plastic having a certain degree of heat resistance. The jig removes the bonding material 3 attached to the bottom of the divided portion.
以往於去除附著於分割部之底部之接合材3之作業時，會使用以如不鏽鋼或刀具之刃部之碳工具鋼（carbon tool steel）製成且於尖端進行銳利加工之治具。以如此之治具進行去除附著於分割部之底部之接合材3時，會切削到分割部之底部之一部分，故而能夠全部去除位於凹面之接合材3。然而，本申請發明中，並非要強硬地全部去除接合材3。若是使用硬質塑膠製作而成之治具，可不傷害到分割部之凹凸面，於去除附著於分割部之底面之表層部分之接合材3時，能夠於分割部之凹部殘留接合材3。Conventionally, in the work of removing the bonding material 3 adhering to the bottom of the divided portion, a jig made of carbon tool steel such as stainless steel or a blade of a cutter and sharply processed at the tip end is used. When the bonding material 3 attached to the bottom of the divided portion is removed by such a jig, one portion of the bottom portion of the divided portion is cut, so that the bonding material 3 located on the concave surface can be completely removed. However, in the invention of the present application, it is not necessary to completely remove the bonding material 3 in a strong manner. When the jig made of a hard plastic is used, the bonding material 3 can be left in the concave portion of the divided portion when the bonding material 3 adhering to the surface portion of the bottom surface of the divided portion is removed without damaging the uneven surface of the divided portion.
其中，可使用具有某種程度上之耐熱性之硬質塑膠製作而成之治具之理由，是因為去除附著於分割部之底部之接合材3之作業時，會於背襯管4升溫至攝氏100度～攝氏120度左右之狀態下進行。可使用之樹脂例如為聚醯亞胺（polyimide）樹脂、聚醯亞胺醯胺（polyimide amide）樹脂。然而，並非現定無此些材料。Among them, the reason why the jig made of a hard plastic having a certain degree of heat resistance can be used is that when the bonding material 3 attached to the bottom of the divided portion is removed, the temperature of the backing tube 4 is raised to Celsius. It is carried out in a state of 100 degrees to 120 degrees Celsius. Resins which can be used are, for example, polyimide resins and polyimide amide resins. However, it is not currently possible to have such materials.
圖2A及圖2B表示使用治具去除接合材3時於凹部殘留一部分之狀態，其中此治具由具有某種程度上之耐熱性之硬質塑膠製作而成，此接合材3存在於背襯管4之基材之對應於分割部之區域所形成之凹凸部之表面。如此一來，於本發明中，去除接合材3時，接合材3主要殘留於凹部，而接合材3即使附著於凸部，亦能夠以與基材之表面幾乎等高（與基材形成凹凸部前之基材表面幾乎等高，或者與基材之凹凸部之凸部幾乎等高）之方式存在。2A and 2B show a state in which a part of the recessed portion is left when the bonding material 3 is removed by using a jig, wherein the jig is made of a hard plastic having a certain degree of heat resistance, and the bonding material 3 is present in the backing tube. The surface of the base material of 4 corresponds to the surface of the uneven portion formed by the region of the divided portion. As described above, in the present invention, when the bonding material 3 is removed, the bonding material 3 mainly remains in the concave portion, and even if the bonding material 3 adheres to the convex portion, it can be almost equal in height to the surface of the substrate (depression with the substrate) The surface of the front surface of the substrate is almost equal in height or is almost equal to the convex portion of the uneven portion of the substrate.
分割的件射靶件之基材之對應於分割部之區域中，由於殘留有做為接合材之銦或銦合金，以電子束微量分析儀（Electron Probe Micro Analyzer，EPMA，於此使用之裝置為能量分散型X射線分析裝置，其為日本電子製之JED-2200F）分析之場合中，所形成之銦或銦合金存在之區域相對於觀察面積可為40%以上且為80%以下。若未滿40%，由於基材之材料露出而提高了污染經濺射而成之薄膜（混入構成基材之鈦或銅等材料）之可能性。另一方面，以下將表示之實施例1之實驗結果中，雖即使達到95.35%亦能夠抑制污染經濺射而成之薄膜，但仍可以80%以下做為上限。若覆蓋於基材之表面之銦或銦合金相對於觀察面積為80%以下，則能夠評估為覆蓋於基材之表面之銦或銦合金確實存在於與基材表面幾乎等高之位置，銦或銦合金自身亦能夠抑制受到濺射之可能性。In the region corresponding to the divided portion of the substrate of the split target projecting member, an indium or indium alloy as a bonding material remains, and an electron beam micro analyzer (EPMA) is used. In the case where the energy dispersive X-ray analyzer is JED-2200F manufactured by JEOL Ltd., the region in which the formed indium or indium alloy is present may be 40% or more and 80% or less with respect to the observation area. If it is less than 40%, the possibility of contaminating the sputtered film (mixed with a material such as titanium or copper constituting the substrate) is increased due to the exposure of the material of the substrate. On the other hand, in the experimental results of Example 1 which will be shown below, even if it is 95.35%, it is possible to suppress the contamination of the film formed by sputtering, but it is possible to make the upper limit 80% or less. If the indium or indium alloy covering the surface of the substrate is 80% or less with respect to the observation area, it can be evaluated that the indium or indium alloy covering the surface of the substrate does exist at a position almost equal to the surface of the substrate, indium. Or the indium alloy itself can suppress the possibility of being sputtered.
以下將說明實施例1。Embodiment 1 will be explained below.
採用實施例1之分割的濺射靶件中，接合材3附著於主要由鈦製成之背襯管4之分割部之底部，且以聚醯亞胺樹脂製成之治具去除接合材3之一部分。圖3A及圖3B繪示採用實施例1之分割的濺射靶件之基材之對應於分割部之區域之EPMA分析結果，圖3A為銦之分析結果，圖3B為鈦之分析結果。圖3B中能夠確認有些微存在鈦之區域。因此，銦合金主要存在於基材之表面之凹凸部之凹部，且可認為銦合金存在於與基材之表面幾乎等高（與基材形成凹凸部前之基材表面幾乎等高，或者與基材之凹凸部之凸部幾乎等高）之範圍內。根據銦之EPMA分析結果，做為接合材3之銦合金存在之區域相對於觀察面積為95.35%。In the sputtering target of the division of the embodiment 1, the bonding material 3 is attached to the bottom of the divided portion of the backing tube 4 mainly made of titanium, and the jig is removed by the jig of the polyimide resin. Part of it. 3A and 3B show the results of EPMA analysis of the region corresponding to the divided portion of the substrate of the divided sputtering target of Example 1, FIG. 3A is an analysis result of indium, and FIG. 3B is an analysis result of titanium. In Fig. 3B, it can be confirmed that there is a region where titanium is slightly present. Therefore, the indium alloy mainly exists in the concave portion of the uneven portion on the surface of the substrate, and it is considered that the indium alloy exists almost at the same level as the surface of the substrate (it is almost equal to the surface of the substrate before the uneven portion is formed on the substrate, or The convex portion of the uneven portion of the substrate is almost in the range of the same height. According to the EPMA analysis result of indium, the region in which the indium alloy as the bonding material 3 exists is 95.35% with respect to the observed area.
以下將說明實施例2。Embodiment 2 will be described below.
採用實施例2之分割的濺射靶件中，接合材3附著於主要由鈦製成之背襯管4之分割部之底部，且以聚醯亞胺樹脂製成之治具去除接合材3之一部分。圖4A及圖4B繪示採用實施例2之分割的濺射靶件之基材之對應於分割部之區域之EPMA分析結果。圖4A為銦之分析結果，圖4B為鈦之分析結果。根據銦之EPMA分析結果，做為接合材3之銦合金存在之區域相對於觀察面積為74.75%。In the sputtering target member of the division of the embodiment 2, the bonding material 3 is attached to the bottom of the divided portion of the backing tube 4 mainly made of titanium, and the jig removing the bonding material 3 is made of a polyimide resin. Part of it. 4A and 4B show the results of EPMA analysis of the region corresponding to the divided portion of the substrate of the divided sputtering target of Example 2. 4A is an analysis result of indium, and FIG. 4B is an analysis result of titanium. According to the EPMA analysis result of indium, the region in which the indium alloy as the bonding material 3 exists is 74.75% with respect to the observed area.
以下將說明實施例3。Embodiment 3 will be explained below.
採用實施例3之分割的濺射靶件中，接合材3附著於主要由鈦製成之背襯管4之分割部之底部，且以聚醯亞胺醯胺樹脂製成之治具去除接合材3之一部分。圖5A及圖5B繪示採用實施例3之分割的濺射靶件之基材之對應於分割部之區域之EPMA分析結果。圖5A為銦之分析結果，圖5B為鈦之分析結果。根據銦之EPMA分析結果，做為接合材3之銦合金存在之區域相對於觀察面積為44.65%。In the sputtering target of the divided example of Embodiment 3, the bonding material 3 is attached to the bottom of the divided portion of the backing tube 4 mainly made of titanium, and the jig made of polyamidamine resin is removed and joined. One part of the material 3. 5A and 5B show EPMA analysis results of the region corresponding to the division portion of the substrate of the sputtering target of the divided example of Example 3. Fig. 5A is an analysis result of indium, and Fig. 5B is an analysis result of titanium. According to the EPMA analysis result of indium, the region in which the indium alloy as the bonding material 3 exists is 44.65% with respect to the observation area.
以下將說明比較例1。Comparative Example 1 will be described below.
採用比較例1之分割的濺射靶件中，接合材3附著於主要由鈦製成之背襯管4之分割部之底部，且以不鏽鋼製成之治具去除接合材3之一部分。圖6A及圖6B繪示採用比較例1之分割的濺射靶件之基材之對應於分割部之區域之EPMA分析結果。圖6A為銦之分析結果，圖6B為鈦之分析結果。根據銦之EPMA分析結果，做為接合材3之銦合金存在之區域相對於觀察面積為8.11%。In the divided sputtering target of Comparative Example 1, the bonding material 3 was attached to the bottom of the divided portion of the backing tube 4 mainly made of titanium, and a jig made of stainless steel was used to remove a part of the bonding material 3. 6A and 6B show the results of EPMA analysis of the region corresponding to the divided portion of the substrate of the divided sputtering target of Comparative Example 1. Fig. 6A is an analysis result of indium, and Fig. 6B is an analysis result of titanium. According to the EPMA analysis result of indium, the region in which the indium alloy as the bonding material 3 exists was 8.11% with respect to the observed area.
以下將說明比較例2。Comparative Example 2 will be described below.
採用比較例2之分割的濺射靶件中，接合材3附著於主要由鈦製成之背襯管4之分割部之底部，且以碳工具鋼製成之治具去除接合材3之一部分。圖7A及圖7B繪示採用比較例2之分割的濺射靶件之基材之對應於分割部之區域之EPMA分析結果。圖7A為銦之分析結果，圖7B為鈦之分析結果。根據銦之EPMA分析結果，做為接合材3之銦合金存在之區域相對於觀察面積為0.76%。In the divided sputtering target of Comparative Example 2, the bonding material 3 is attached to the bottom of the divided portion of the backing tube 4 mainly made of titanium, and a jig made of carbon tool steel is used to remove a part of the bonding material 3. . 7A and 7B show the results of EPMA analysis of the region corresponding to the divided portion of the substrate of the divided sputtering target of Comparative Example 2. Fig. 7A shows the analysis result of indium, and Fig. 7B shows the analysis result of titanium. According to the EPMA analysis result of indium, the region in which the indium alloy as the bonding material 3 exists is 0.76% with respect to the observed area.
以下將評估實施例及比較例。The examples and comparative examples will be evaluated below.
下列表1為進行關於實施例1～3及比較例1～2之分割的濺射靶件之評估試驗後所整合之結果。The following Table 1 is the result of integration of the evaluation tests of the sputtering targets of the divisions of Examples 1 to 3 and Comparative Examples 1 and 2.
表1 <TABLE border="1" borderColor="#000000" width="_0003"><TBODY><tr><td> 試驗 </td><td> 治具之材質 </td><td> 殘留銦金屬之面積比（%） </td><td> 薄膜中鈦之濃度（ppm） </td></tr><tr><td> 實施例1 </td><td> 聚醯亞胺 </td><td> 95.35 </td><td> ＜5 </td></tr><tr><td> 實施例2 </td><td> 聚醯亞胺 </td><td> 74.75 </td><td> ＜5 </td></tr><tr><td> 實施例3 </td><td> 聚醯亞胺醯胺 </td><td> 44.65 </td><td> ＜5 </td></tr><tr><td> 比較例1 </td><td> 不鏽鋼 </td><td> 8.11 </td><td> 10 </td></tr><tr><td> 比較例2 </td><td> 碳工具鋼 </td><td> 0.76 </td><td> 20 </td></tr></TBODY></TABLE>Table 1 <TABLE border="1" borderColor="#000000" width="_0003"><TBODY><tr><td> Test</td><td> Material of the fixture</td><td> Residual indium metal Area ratio (%) </td><td> Titanium concentration in the film (ppm) </td></tr><tr><td> Example 1 </td><td> Polyimine /td><td> 95.35 </td><td> <5 </td></tr><tr><td> Example 2 </td><td> Polyimine</td><td > 74.75 </td><td> <5 </td></tr><tr><td> Example 3 </td><td> Polyimine amide [td><td> 44.65 < /td><td> <5 </td></tr><tr><td> Comparative Example 1 </td><td> Stainless Steel</td><td> 8.11 </td><td> 10 < /td></tr><tr><td> Comparative Example 2 </td><td> Carbon Tool Steel</td><td> 0.76 </td><td> 20 </td></tr> </TBODY></TABLE>
進行評估試驗時，將長寬分別為30 cm之尺寸玻璃基板設置成位於面向靶件之分割部分之位置，且形成厚度為3.000 nm之薄膜，形成薄膜後，以鹽酸熔解此薄膜，之後再藉由感應耦合電漿原子發射光譜儀（Inductively Coupled Plasma Atomic Emission Spectrometer，ICP-AES）實施雜質分析。In the evaluation test, a glass substrate having a length and a width of 30 cm was placed at a position facing the divided portion of the target, and a film having a thickness of 3.000 nm was formed. After the film was formed, the film was melted with hydrochloric acid, and then borrowed. Impurity analysis was performed by Inductively Coupled Plasma Atomic Emission Spectrometer (ICP-AES).
如表1所示，使用實施例1～3之分割的濺射靶件，可得到混入少於5 ppm之背襯管4之鈦成分之結果。另一方面，使用比較例1之分割的濺射靶件則混入10 ppm之背襯管4之鈦成分，使用比較例2之分割的濺射靶件則混入20 ppm之背襯管4之鈦成分。As shown in Table 1, the results of the titanium component of the backing tube 4 of less than 5 ppm were obtained by using the sputtering target of the divisions of Examples 1 to 3. On the other hand, the divided sputtering target of Comparative Example 1 was mixed with the titanium component of the 10 ppm backing tube 4, and the divided sputtering target of Comparative Example 2 was mixed with the titanium of the 20 ppm backing tube 4. ingredient.
根據本發明，多個靶件部材接合於基材而得到之分割的濺射靶件中，自靶件部材相互之間之間隙（分割部）露出之基材之構成材料即使受到濺射，亦能夠有效防止基材之構成材料混入所形成之薄膜中。更甚者，由於為了令基材之構成材料不受濺射，存在於靶件部材相互之間隙（分割部）之接合材主要存在於背襯板（backing plate）或背襯管之表面之凹部內，故能夠極力降低接合材受到濺射之可能性，還能夠形成預計成分之薄膜。According to the present invention, in the sputtering target obtained by joining the plurality of target members to the substrate, even if the constituent material of the substrate exposed from the gap (divided portion) between the target members is sputtered, It is possible to effectively prevent the constituent material of the substrate from being mixed into the formed film. Furthermore, since the constituent material of the gap between the target members (the divided portion) is mainly present in the concave portion of the surface of the backing plate or the backing tube, in order to prevent the constituent material of the substrate from being sputtered. Therefore, it is possible to minimize the possibility that the bonding material is sputtered, and it is also possible to form a film of a predetermined composition.
再者，本實施型態中雖說明關於圓筒形的基材，但本發明若為多個靶件部材接合於背襯板而得到之分割的濺射靶件，則基材亦能夠同樣適用為背襯板，且濺射用靶件部材之形狀亦能夠同樣適用為板狀。Further, in the present embodiment, a cylindrical substrate is described. However, in the present invention, when a plurality of target members are joined to a backing plate to obtain a divided sputtering target, the substrate can be similarly applied. The backing plate and the shape of the sputtering target member can be similarly applied to a plate shape.
其中，於一般接合板狀之濺射用靶件部材之製造方法中基於上述說明關於圓筒形基材之製造方法，亦能夠藉由下列方式製造採用本發明知分割的濺射靶材（其中基材為背襯板）。於背襯板之接合有靶件部材之側表面形成凹凸部，經由銦或銦合金將靶件部材接合於形成有凹凸部之背襯板。於背襯板之對應於分割部之區域形成凹凸部，使用硬質塑膠製作而成之治具去除存在於凹凸部之表面之接合材，且同時主要於凹部殘留接合材。In the method for producing a sputtering target member in a general bonding plate shape, the sputtering target according to the present invention can be manufactured by the following method based on the above-described description of the method for producing a cylindrical substrate. The substrate is a backing plate). A concave-convex portion is formed on the side surface of the backing plate to which the target member is joined, and the target member is joined to the backing plate on which the uneven portion is formed via indium or indium alloy. An uneven portion is formed in a region of the backing plate corresponding to the divided portion, and a jig made of a hard plastic material is used to remove the bonding material existing on the surface of the uneven portion, and at the same time, the bonding material remains mainly in the concave portion.
本發明並非限定於上述之實施型態，在未脫離意旨之範圍亦能夠適當變更。The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the scope of the invention.
1 圓筒形濺射用靶件部材 2 間隔件 3 接合材 4 背襯管1 cylindrical sputtering target part 2 spacer 3 bonding material 4 backing tube
圖1為用以說明關於本發明之一實施型態中使用接合材結合圓筒形濺射用靶件部材及圓筒形基材之接合工程之概略圖。 圖2A為關於本發明之一實施態樣之分割的濺射靶件中繪示圖2B之剖面位置之圖。 圖2B繪示關於本發明之一實施型態之分割的濺射靶件之背襯板或背襯管之凹凸部之凹部殘留有接合材之概略圖。 圖3A繪示銦於採用實施例1之分割的濺射靶件之基材之對應於分割部之區域中之EPMA分析結果圖。 圖3B繪示鈦於採用實施例1之分割的濺射靶件之基材之對應於分割部之區域中之EPMA分析結果圖。 圖4A繪示銦於採用實施例2之分割的濺射靶件之基材之對應於分割部之區域中之EPMA分析結果圖。 圖4B繪示鈦於採用實施例2之分割的濺射靶件之基材之對應於分割部之區域中之EPMA分析結果圖。 圖5A繪示銦於採用實施例3之分割的濺射靶件之基材之對應於分割部之區域中之EPMA分析結果圖。 圖5B繪示鈦於採用實施例3之分割的濺射靶件之基材之對應於分割部之區域中之EPMA分析結果圖。 圖6A繪示銦於採用比較例1之分割的濺射靶件之基材之對應於分割部之區域中之EPMA分析結果圖。 圖6B繪示鈦於採用比較例1之分割的濺射靶件之基材之對應於分割部之區域中之EPMA分析結果圖。 圖7A繪示銦於採用比較例2之分割的濺射靶件之基材之對應於分割部之區域中之EPMA分析結果圖。 圖7B繪示鈦於採用比較例2之分割的濺射靶件之基材之對應於分割部之區域中之EPMA分析結果圖。Fig. 1 is a schematic view for explaining a joining process of joining a cylindrical sputtering target member and a cylindrical substrate using a bonding material in an embodiment of the present invention. Fig. 2A is a view showing the position of the cross section of Fig. 2B in a sputtering target member according to an embodiment of the present invention. 2B is a schematic view showing a bonding material remaining in a concave portion of a concave-convex portion of a backing plate or a backing tube of a sputtering target according to an embodiment of the present invention. 3A is a graph showing the result of EPMA analysis of indium in a region corresponding to the divided portion of the substrate of the divided sputtering target of Example 1. Fig. 3B is a graph showing the results of EPMA analysis of titanium in the region corresponding to the divided portion of the substrate of the divided sputtering target of Example 1. 4A is a graph showing the result of EPMA analysis of indium in a region corresponding to the divided portion of the substrate of the divided sputtering target of Example 2. 4B is a graph showing the results of EPMA analysis of titanium in a region corresponding to the divided portion of the substrate of the divided sputtering target of Example 2. Fig. 5A is a graph showing the result of EPMA analysis of indium in a region corresponding to the divided portion of the substrate of the divided sputtering target of Example 3. Fig. 5B is a graph showing the results of EPMA analysis of titanium in the region corresponding to the divided portion of the substrate of the divided sputtering target of Example 3. Fig. 6A is a graph showing the results of EPMA analysis of indium in a region corresponding to the divided portion of the substrate of the divided sputtering target of Comparative Example 1. Fig. 6B is a graph showing the results of EPMA analysis of titanium in the region corresponding to the divided portion of the substrate of the divided sputtering target of Comparative Example 1. Fig. 7A is a graph showing the results of EPMA analysis of indium in a region corresponding to the divided portion of the substrate of the divided sputtering target of Comparative Example 2. Fig. 7B is a graph showing the results of EPMA analysis of titanium in the region corresponding to the divided portion of the substrate of the divided sputtering target of Comparative Example 2.
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| JP7311290B2 (en) * | 2019-03-27 | 2023-07-19 | Ｊｘ金属株式会社 | Segmented sputtering target and manufacturing method thereof |
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