TWI553841B - 晶片封裝及其製造方法 - Google Patents

晶片封裝及其製造方法 Download PDF

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TWI553841B
TWI553841B TW102103806A TW102103806A TWI553841B TW I553841 B TWI553841 B TW I553841B TW 102103806 A TW102103806 A TW 102103806A TW 102103806 A TW102103806 A TW 102103806A TW I553841 B TWI553841 B TW I553841B
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semiconductor wafer
metal
pad
wafer
conductive layer
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TW102103806A
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TW201431053A (zh
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張義昌
陳彥欣
沈啟智
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原相科技股份有限公司
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Priority to TW102103806A priority Critical patent/TWI553841B/zh
Priority to US14/163,569 priority patent/US9142529B2/en
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Description

晶片封裝及其製造方法
本發明係有關一種晶片封裝及其製造方法，特別是指一種具有散熱功能之晶片封裝及其製造方法。
第1圖舉例顯示一種先前技術晶片封裝1之剖視示意圖。如第1圖所示，晶片封裝1例如為一種影像感測的晶片封裝。包含：半導體晶片11、銲墊12、空腔牆13、光學玻璃14、導電墊15、電導線16、內部焊接布局層17、焊球18、以及外部焊接布局層19。光學影像訊號穿過光學玻璃14，由空腔牆13所形成的空腔，進入半導體晶片11。藉由半導體晶片11中的電路操作，將光學影像訊號轉換為電子訊號後，由銲墊12經由導電墊15、電導線16與焊球18，傳送至印刷電路板(未示出)。
當導體基板11中的電路操作時，會產生熱量，而晶片封裝1例如為晶片級封裝(chip scale package,CSP)，會產生散熱的問題，以致晶片的效能受到影響，影像訊號受雜訊干擾，甚至導致晶片封裝1損壞。
有鑑於此，本發明即針對上述先前技術之不足，提出一種晶片封裝及其製造方法，以改善晶片封裝散熱問題，進而降低晶片工作溫度，提高晶片工作效率。
本發明提供了一種晶片封裝，包含：一半導體晶片，具有相對之上表面及下表面；一金屬導熱層，形成於該下表面上，用以吸收該半導體晶片所產生之熱量；以及一銲墊，形成於該上表面上，用以電連接至該半導體晶片中之電路。
就另一觀點，本發明也提供了一種晶片封裝製造方法，包含：提供一半導體晶片，具有相對之上表面及下表面；形成一金屬導熱層於該下表面上，用以吸收該半導體晶片所產生之熱量；以及形成一銲墊於 該上表面上，用以電連接至該半導體晶片中之電路。
在一種較佳的實施例中，該晶片封裝，更包含：一金屬導熱帶，與該金屬導熱層連接；以及一焊球或一引腳，與該金屬導熱帶耦接；其中，該半導體晶片中之電路所產生的熱量，藉由該金屬導熱層與該金屬導熱帶，傳導至該焊球或該引腳。
上述的實施例中，該焊球或該引腳較佳地電連接至一接地電位。
在另一種較佳的實施例中，該金屬層完全覆蓋該下表面。
在其中一種實施例中，該半導體晶片中之電路包括一影像感測電路。
底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。
1,2,3,4,5,6‧‧‧晶片封裝
11,21,31,41,51,61‧‧‧半導體晶片
12,22,32,42,52,62‧‧‧銲墊
13,23,33,43‧‧‧空腔牆
14,24,34,44‧‧‧光學玻璃
15,25,35,45‧‧‧導電墊
16,26,36,46,56,63‧‧‧電導線
17,27,37,47‧‧‧內部焊接布局層
18,28,38,38a,48,48a,58‧‧‧焊球
19,29,39,49‧‧‧外部焊接布局層
21a,31a,41a,51a,61a‧‧‧金屬導熱層
31b,41b‧‧‧金屬導熱帶
53‧‧‧保護層
54‧‧‧第一絕緣層
57‧‧‧第二絕緣層
60‧‧‧導線架
64‧‧‧封膠層
65‧‧‧模板
68‧‧‧引腳
211,311,411,511‧‧‧上表面
212,312,412,512‧‧‧下表面
第1圖舉例顯示一種先前技術晶片封裝1之剖視示意圖。
第2圖顯示本發明的第一個實施例。
第3圖顯示本發明第二個實施例。
第4圖顯示本發明的第三個實施例。
第5A-5E圖顯示本發明的第四個實施例。
第6圖顯示本發明的第五個實施例。
本發明中的圖式均屬示意，主要意在表示製程步驟以及各層之間之上下次序關係，至於形狀、厚度與寬度則並未依照比例繪製。
請參閱第2圖，顯示本發明的第一個實施例。第2圖顯示晶片封裝2之剖視示意圖。如第2圖所示，晶片封裝2例如但不限於為一種影像感測電路的晶片級封裝。晶片封裝2包含：半導體晶片21、金屬導熱層21a、銲墊22、空腔牆23、光學玻璃24、導電墊25、電導線26、內部焊接布局層27、焊球28、以及外部焊接布局層29。其中，半導體晶片21具 有相對之上表面211與下表面212；且銲墊22形成於上表面211上，用以電連接至半導體晶片21中之電路。(在本實施例圖中半導體晶片21具有電路的一面朝下、基板的一面朝上，因一般慣稱具有電路的一面為上方，故將圖中的下方表面稱為上表面211。)光學影像訊號穿過光學玻璃24，由空腔牆23所形成的空腔，進入半導體晶片21。藉由半導體晶片21中的電路操作，將光學影像訊號轉換為電子訊號後，由銲墊22經由導電墊25、電導線26與焊球28，傳送至印刷電路板(未示出)。須說明的是，在不同方式的晶片封裝中，焊球28亦可以為引腳的形式，而不限於如圖中所示之焊球28。
本實施例與先前技術的不同，主要在於金屬導熱層21a形成於下表面212上，用以吸收半導體晶片21所產生之熱量，以降低半導體晶片21中的電路溫度，提升電路的效能。
另須說明的是，金屬導熱層21a較佳但不限於如圖所示，完全覆蓋下表面212，如此一來，可以將散熱的效果最佳化，此外，對影像感測電路的晶片級封裝來說，可加強影像感測訊號，並提供均勻的背景訊號，此亦為本發明優於先前技術之處。
請參閱第3圖，顯示本發明的第二個實施例。第3圖顯示晶片封裝3之剖視示意圖。如第3圖所示，晶片封裝3例如但不限於為一種影像感測電路的晶片級封裝。晶片封裝3包含：半導體晶片31、金屬導熱層31a、金屬導熱帶31b、銲墊32、空腔牆33、光學玻璃34、導電墊35、電導線36、內部焊接布局層37、焊球38與38a、以及外部焊接布局層39。其中，半導體晶片31具有相對之上表面311與下表面312；且銲墊32形成於上表面311上，用以電連接至半導體晶片31中之電路。光學影像訊號穿過光學玻璃34，由空腔牆23所形成的空腔，進入半導體晶片31。藉由半導體晶片31中的電路操作，將光學影像訊號轉換為電子訊號後，由銲墊32經由導電墊35、電導線36與焊球38與38a，傳送至印刷電路板(未示出)。
本實施例與第一個實施例不同之處在於，晶片封裝3更包含金屬導熱帶31b，其與金屬導熱層31a連接，且透過導電墊35與電導線36，連接至其中一個或多個焊球38(圖示數目與位置僅是舉例，可為不同的數目與位置)。半導體晶片3中之電路所產生的熱量，藉由金屬導熱層31a、 金屬導熱帶31b、導電墊35、電導線36，傳導至焊球38，由於金屬導熱層31a、金屬導熱帶31b、導電墊35、電導線36、與焊球38皆為金屬，也是熱的良導體，故電路所產生的熱量可傳導至外部散逸。須說明的是，在不同方式的晶片封裝中，焊球38與38a亦可以為引腳的形式，而不限於如圖中所示之焊球38與38a。另外，金屬導熱層31a、金屬導熱帶31b、導電墊35、電導線36、與焊球38可具有相同電位，一種較佳的方式為，將其電連接至接地電位，不但可以改善散熱效果，亦可以改善電路中，接地電位的穩定性。
請參閱第4圖，顯示本發明的第三個實施例。第4圖顯示晶片封裝4之剖視示意圖。如第4圖所示，晶片封裝4例如但不限於為一種影像感測電路的晶片級封裝。晶片封裝4包含：半導體晶片41、金屬導熱層41a、金屬導熱帶41b、銲墊42、空腔牆43、光學玻璃44、導電墊45、電導線46、內部焊接布局層47、焊球48與48a、以及外部焊接布局層49。其中，半導體晶片41具有相對之上表面411與下表面412；且銲墊42形成於上表面411上，用以電連接至半導體晶片41中之電路。光學影像訊號穿過光學玻璃44，由空腔牆43所形成的空腔，進入半導體晶片41。藉由半導體晶片41中的電路操作，將光學影像訊號轉換為電子訊號後，由銲墊42經由導電墊45、電導線46與焊球48與48a，傳送至印刷電路板(未示出)。
本實施例與第二個實施例不同之處在於，晶片封裝4中之金屬導熱帶41b，其與金屬導熱層41a連接，但不經由導電墊45而直接由電導線46連接至一個或多個焊球48(圖示數目與位置僅是舉例，可為不同的數目與位置)。本實施例旨在說明金屬導熱帶與焊球或引腳有多種的連接形式，而不限於如第3圖所示之方式。且在此實施例中，由於焊球48不必須與導電墊45連接，因此焊球48不必須具有電性上的功能。
第5A-5E圖顯示本發明的第四個實施例。本實施例顯示另一種晶片封裝5的製造方法之剖視示意圖。如第5A圖所示，首先提供半導體晶片51，半導體晶片51具有相對之上表面511與下表面512。接著請參閱第5B圖，於下表面512上，形成金屬導熱層51a，與半導體晶片51連接，用以吸收半導體晶片51所產生之熱量。接著，如第5C圖所示，形成 銲墊52於上表面511上，用以電連接至半導體晶片51中之電路。接著於上表面511上，形成保護層53與第一絕緣層54。接下來如第5D圖所示，於第一絕緣層54上，形成電導線56。接著如第5E圖所示，於電導線56上，形成第二絕緣層57，然後形成焊球58與電導線56電連接。本實施例旨在說明根據本發明之晶片封裝5的製作方法，並舉例示出金屬導熱層亦可以如本實施例所示，相對焊球位於半導體晶片51之不同側，也就是說，本實施例與前述之實施例不同，焊球58可位於上表面511上，而非位於下表面512上，以此說明本實施例可應用於各種晶片封裝架構。
請參閱第6圖，顯示本發明的第五個實施例。本實施例顯示晶片封裝6之剖視示意圖。如第6圖所示，導線架60包含複數引腳68(lead)，利用打線(wire bond)技術，將引腳68分別經由複數電導線63電性連接至半導體晶片61上之銲墊62，進而電連接至半導體晶片61中之電路。如圖所示，金屬導熱層61a形成於半導體晶片61之下表面上，並黏著於導線架60中之晶片模板65(die paddle)上，經過打線後，半導體晶片61經由電導線63電性連接至導線架60中之引腳68；接著以封膠層64封膠(molding)半導體晶片61、導線架60、與電導線63，就完成晶片封裝6。接著，將引腳68固定於電路板66上，就可使此晶片封裝6成為電路板66上電路的一部分。
本實施例旨在說明，本發明亦可以應用於具有引腳之另一種晶片封裝的形式，並將半導體晶片61所產生的熱量，經由金屬導熱層61a，傳導至晶片模板65，或亦可透過其他連接方式(例如但不限於直通矽穿孔，TSV)，傳導至銲墊62與引腳68。
以上已針對較佳實施例來說明本發明，唯以上所述者，僅係為使熟悉本技術者易於了解本發明的內容而已，並非用來限定本發明之權利範圍。在本發明之相同精神下，熟悉本技術者可以思及各種等效變化。例如，雖然在一些實施例中半導體晶片以影像感測電路晶片為例，但本發明不限於此，亦可應用在其他種類的半導體晶片中；再如，在不影響元件主要的特性下，可加入其他製程步驟或結構，如緩衝層等；又如，金屬導熱層的形成，可於封裝製程中完成，亦可於晶圓製程中完成。本發明的範 圍應涵蓋上述及其他所有等效變化。
2‧‧‧晶片封裝
21‧‧‧半導體晶片
211‧‧‧上表面
212‧‧‧下表面
21a‧‧‧金屬導熱層
22‧‧‧銲墊
23‧‧‧空腔牆
24‧‧‧光學玻璃
25‧‧‧導電墊
26‧‧‧電導線
27‧‧‧內部焊接布局層
28‧‧‧焊球
29‧‧‧外部焊接布局層

Claims (4)

  1. 一種晶片封裝製造方法，包含：提供一半導體晶片，具有相對之上表面及下表面，該半導體晶片包括一影像感測電路；形成一金屬導熱層於該下表面上，用以吸收該半導體晶片所產生之熱量；形成一銲墊於該上表面上，用以電連接至該半導體晶片中之該影像感測電路形成一空腔牆，與該上表面連接；以及形成一光學玻璃，與該空腔牆連接；其中，一光學影像訊號穿過該光學玻璃，經由該空腔牆所形成的空腔，進入該半導體晶片。
  2. 如申請專利範圍第1項所述之晶片封裝製造方法，更包含：形成一銲墊，其中該半導體晶片與該銲墊電連接，且該半導體晶片所產生的熱量，經由金屬導熱層，傳導至該銲墊。
  3. 一種晶片封裝，包含：一半導體晶片，具有相對之上表面及下表面，該半導體晶片包括一影像感測電路；一金屬導熱層，形成於該下表面上，用以吸收該半導體晶片所產生之熱量；一銲墊，形成於該上表面上，用以電連接至該半導體晶片中之該影像感測電路一空腔牆，與該上表面連接；以及一光學玻璃，與該空腔牆連接；其中，一光學影像訊號穿過該光學玻璃，經由該空腔牆所形成的空腔，進入該半導體晶片。
  4. 一種晶片封裝，包含：一半導體晶片，具有相對之上表面及下表面；一金屬導熱層，形成於該下表面上，用以傳導或吸收該半導體晶片所產生之熱量； 一銲墊，形成於該上表面上，用以電連接至該半導體晶片中之一電路；一金屬導熱帶，與該金屬導熱層連接；以及一焊球或一引腳，與該金屬導熱帶連接，但不與一導電墊連接，該焊球提供散熱的功能而不具有電性上的功能，其中該半導體晶片所產生的熱量，經由該金屬導熱層與該金屬導熱帶，傳導至該焊球或該引腳。
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