TWI550920B - 發光二極體 - Google Patents
發光二極體 Download PDFInfo
- Publication number
- TWI550920B TWI550920B TW101147113A TW101147113A TWI550920B TW I550920 B TWI550920 B TW I550920B TW 101147113 A TW101147113 A TW 101147113A TW 101147113 A TW101147113 A TW 101147113A TW I550920 B TWI550920 B TW I550920B
- Authority
- TW
- Taiwan
- Prior art keywords
- emitting diode
- light
- heat
- plate body
- columns
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 239000007769 metal material Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 210000000746 body region Anatomy 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
本發明涉及一種發光二極體,尤其涉及一種具有高散熱效率的發光二極體。
相比於傳統的發光源,發光二極體(Light Emitting Diode,LED)具有重量輕、體積小、污染低、壽命長等優點,其作為一種新型的發光源,已經被越來越多地應用到各領域當中。
然而,隨著目前發光二極體的功率增大,其所消耗及損失的能量也越來越多,產生的熱量也越來越大。傳統的承載發光二極體晶片的基板是由陶瓷材料製成,但陶瓷材料的導熱性能不好,使得發光二極體晶片產生的熱量不易散發。
有鑒於此,本發明旨在提供一種提高散熱效率的發光二極體。
一種發光二極體,包括基板、設置在該基板上的電極結構及設置於該基板上且與該電極結構電性連接的發光二極體晶片,該基板包括一板體和內嵌地設置於該板體內的複數個導熱柱,該複數個導熱柱彼此間隔設置且均位於發光二極體晶片正下方的板體區域內,該發光二極體晶片與該複數個導熱柱熱接觸。
本發明藉由在該板體的內部設置複數個導熱柱,從而使發光二極
體晶片產生的大量熱量可快速傳導至該複數個導熱柱上,有利於熱量的散發,提高發光二極體的使用壽命。
1‧‧‧發光二極體
10‧‧‧基板
11‧‧‧板體
111‧‧‧上表面
112‧‧‧下表面
12‧‧‧導熱柱
121‧‧‧上表面
122‧‧‧下表面
20‧‧‧發光二極體晶片
30‧‧‧第一電極
40‧‧‧第二電極
50‧‧‧導線
圖1為本發明一較佳實施例的發光二極體的剖面示意圖。
圖2為圖1中基板的俯視圖。
如圖1所示,本發明第一實施例提供的發光二極體1,其包括一基板10、設置在基板10上的第一電極30和第二電極40、以及設置於基板10上且分別與第一電極30和第二電極40電性連接的發光二極體晶片20。
請同時參閱圖2,基板10包括一板體11和內嵌地設置於板體11內的複數個彼此間隔設置的導熱柱12。板體11呈平板狀,其具有一上表面111及一下表面112。於本實施例中,板體11由絕緣材料製成,如陶瓷、樹脂或高分子材料等。該複數個導熱柱12豎直嵌入板體11內部,且其分別具有一上表面121及一下表面122,該複數個導熱柱12的上表面121和下表面122分別與板體11的上表面111和下表面112平齊。於本實施例中,該複數個導熱柱12的數目為7個,且其均勻設置於板體11內。具體地,該7個導熱柱12成蜂窩狀排列,且每一導熱柱12呈六棱柱狀。導熱柱12由導熱性能較高的金屬材料製成,如Al、Cu或Ag等。可以理解地,導熱柱12也可呈長方體狀或圓柱體狀等。
發光二極體晶片20設置在基板10的上表面111上且位於該複數個導熱柱12的正上方,其與該複數個間隔設置的導熱柱12分別熱接觸。第一電極30和第二電極40均設置在板體11的上表面111上,
且分別位於板體11的、分佈有該複數個導熱柱12的區域的兩側。發光二極體晶片20分別與第一電極30和第二電極40藉由兩根導線50電性連接,本實施例中,發光二極體晶片20與該複數個導熱柱12直接接觸。
發光二極體1在工作過程中,發光二極體晶片20會產生大量的熱量,本發明藉由在板體11的內部設置該複數個導熱柱12,從而使發光二極體晶片20產生的大量熱量可快速傳導至該複數個導熱柱12上,有利於熱量的散發,提高發光二極體1的使用壽命。
其次,該複數個導熱柱12由傳熱性能較高的金屬材料製成並且嵌入板體11內,由於該複數個導熱柱12均位於發光二極體晶片20正下方的板體11區域內,故每一導熱柱12的體積較小,導熱柱12在受熱後產生的熱應力也較小,該較小的熱應力能夠與熱膨脹係數較小的板體11的熱應力相抵消,從而使該複數個導熱柱12不易發生形變,使得與複數個導熱柱12熱接觸的發光二極體晶片20不易因導熱柱12的大幅度形變而受到損壞;另外,由於該導熱柱12的數目為多個,使得該發光二極體1的熱量能夠藉由多個導熱柱12傳導,從而利用增加熱傳導管道的方式保證散熱性能,提高發光二極體1的使用壽命。
可以理解地,當相鄰的兩導熱柱12的間距增大時,其位於發光二極體晶片20正下方的板體區域內的導熱柱12的數量會減小,因此熱應力會降低,從而使該複數個導熱柱12不易發生形變;當相鄰的兩導熱柱12的間距減小時,其位於發光二極體晶片20正下方的板體區域內的導熱柱12的數量會增大,從而使該複數個導熱柱12的總體積增加,提高了發光二極體1的散熱性能。
綜上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉本案技藝之人士,在爰依本發明精神所作之等效修飾或變化,皆應涵蓋於以下之申請專利範圍內。
1‧‧‧發光二極體
10‧‧‧基板
11‧‧‧板體
111‧‧‧上表面
112‧‧‧下表面
12‧‧‧導熱柱
121‧‧‧上表面
122‧‧‧下表面
20‧‧‧發光二極體晶片
30‧‧‧第一電極
40‧‧‧第二電極
50‧‧‧導線
Claims (7)
- 一種發光二極體,包括基板、設置在該基板上的電極結構及設置於該基板上且與該電極結構電性連接的發光二極體晶片,其改良在於:該基板包括一板體和內嵌地設置於該板體內的複數個導熱柱,該複數個導熱柱彼此間隔設置且均位於發光二極體晶片正下方的板體區域內,該發光二極體晶片完全覆蓋該複數個導熱柱,該發光二極體晶片與該複數個導熱柱分別直接熱接觸。
- 如申請專利範圍第1項所述的發光二極體,其中,該板體具有一上表面及一下表面,該發光二極體晶片和該電極結構均設置在該板體的上表面,該複數個導熱柱的上下端分別與該板體的上表面和下表面平齊。
- 如申請專利範圍第1項所述的發光二極體,其中,該板體由絕緣材料製成。
- 如申請專利範圍第1項所述的發光二極體,其中,該導熱柱由金屬材料製成。
- 如申請專利範圍第1項所述的發光二極體,其中,該複數個導熱柱均勻設置在該發光二極體晶片正下方的板體區域。
- 如申請專利範圍第5項所述的發光二極體,其中,該複數個導熱柱成蜂窩狀排列。
- 如申請專利範圍第1項所述的發光二極體,其中,該導熱柱呈六角柱狀、長方體狀或圓柱體狀。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101147113A TWI550920B (zh) | 2012-12-13 | 2012-12-13 | 發光二極體 |
US13/848,696 US20140167093A1 (en) | 2012-12-13 | 2013-03-21 | Light emitting diode having a plurality of heat conductive columns |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101147113A TWI550920B (zh) | 2012-12-13 | 2012-12-13 | 發光二極體 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201424062A TW201424062A (zh) | 2014-06-16 |
TWI550920B true TWI550920B (zh) | 2016-09-21 |
Family
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TW101147113A TWI550920B (zh) | 2012-12-13 | 2012-12-13 | 發光二極體 |
Country Status (2)
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US (1) | US20140167093A1 (zh) |
TW (1) | TWI550920B (zh) |
Citations (2)
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TW201218467A (en) * | 2010-10-29 | 2012-05-01 | Foxsemicon Integrated Tech Inc | Light emitting element |
US20120161190A1 (en) * | 2010-12-22 | 2012-06-28 | Zhimin Jamie Yao | Electronic device submounts including substrates with thermally conductive vias |
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KR101241650B1 (ko) * | 2005-10-19 | 2013-03-08 | 엘지이노텍 주식회사 | 엘이디 패키지 |
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JP5915527B2 (ja) * | 2010-07-29 | 2016-05-11 | 旭硝子株式会社 | ガラスセラミックス組成物、発光素子用基板、および発光装置 |
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2012
- 2012-12-13 TW TW101147113A patent/TWI550920B/zh not_active IP Right Cessation
-
2013
- 2013-03-21 US US13/848,696 patent/US20140167093A1/en not_active Abandoned
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TW201218467A (en) * | 2010-10-29 | 2012-05-01 | Foxsemicon Integrated Tech Inc | Light emitting element |
US20120161190A1 (en) * | 2010-12-22 | 2012-06-28 | Zhimin Jamie Yao | Electronic device submounts including substrates with thermally conductive vias |
Also Published As
Publication number | Publication date |
---|---|
US20140167093A1 (en) | 2014-06-19 |
TW201424062A (zh) | 2014-06-16 |
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