TWI550842B - 影像感應器 - Google Patents
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- TWI550842B TWI550842B TW104111481A TW104111481A TWI550842B TW I550842 B TWI550842 B TW I550842B TW 104111481 A TW104111481 A TW 104111481A TW 104111481 A TW104111481 A TW 104111481A TW I550842 B TWI550842 B TW I550842B
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- 239000004065 semiconductor Substances 0.000 claims description 23
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- 239000002184 metal Substances 0.000 claims description 20
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- 238000004519 manufacturing process Methods 0.000 claims description 9
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- 238000005530 etching Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 97
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
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- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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Description
本發明係有關於影像感應器(image sensor device)技術,特別是有關於一種CMOS影像感應器(CMOS image sensor,CIS)及其製作方法。
CMOS影像感應器是本領域已知的影像感應技術,其具有主動元件,如電晶體,與每個像素相關聯,因為與CMOS製程相容,其優點是能夠將信號處理和感測電路製作在同一個積體電路內。
CMOS影像感應器的感測胞通常由數個電晶體和一光二極管(photodiode)構成,其感光原理係將入射光線區分為各種不同波長光線的組合,例如紅、藍、綠三色,再分別由半導體基底上的複數個感光元件予以接收,並將之轉換為不同強弱的數位訊號。
第1圖繪示的是習知CMOS影像感應器的剖面示意圖。如第1圖所示,習知CMOS影像感應器包括一半導體基底10,在其主動陣列區101內設有複數個感光元件110。在半導體基底10上依序沉積一介電層12、一介電層14以及一介電層16,其中介電層12覆蓋主動陣列區101內的感光元件110以及週邊電路區102的電晶體元件120,介電層14覆蓋形成在介電層12上的金屬內連線層140,而介電層16覆蓋形成在介電層14上的金屬內連線層160。
習知為了減少入射光線在光徑上的減損,在沉積完介電層16後,會利用一光阻圖案18,覆蓋在介電層16上,再實施所謂的「峽谷(canyon)」蝕刻製程,經由光阻圖案18的開口18a所顯露出的主動陣列區101內的介電層16表面,將介電層16蝕刻至一預定深度,但不會蝕穿介電層16或顯露出
下方的介電層14,如此於主動陣列區101正上方的介電層16中形成一凹陷區域21。
然而,上述先前技藝的缺點在於「峽谷」蝕刻製程會受到負載效應(loading effect)的影響,導致凹陷區域21的側壁21a與凹陷區域21的底部21b之間的夾角θ1大於90度,如虛線圓圈處20所示。換言之,入射光線在進入主動陣列區101邊緣角落處的感光元件110a之前,會通過比主動陣列區101中央更厚的介電層16,因此造成影像中央與角落有明顯的明暗對比。
本發明於是提出一種改良的CMOS影像感應器及其製作方法,可以解決上述先前技藝的不足與缺點。
為達上述目的,本發明於是提出一種影像感應器,包含有一半導體基底,其具有一主動陣列區以及一週邊電路區;複數個感光元件,設於該主動陣列區內的該半導體基底中;一第一介電層,位於該半導體基底上,覆蓋該主動陣列區以及該週邊電路區;以及一第二介電層,位於該第一介電層上,其中該第二介電層中具有一凹陷區域對應於該主動陣列區,顯露出該第一介電層的上表面,且由該第二介電層的一側壁所定義出來的該凹陷區域的周圍與該第一介電層的該上表面具有一夾角,其中該夾角小於90度。
根據本發明實施例,該第一介電層及該第二介電層均為矽氧介電層。
根據本發明實施例,另有一第一金屬內連線層,設於該半導體基底上,且該第一介電層覆蓋該第一金屬內連線層,一第二金屬內連線層,設於該第一介電層上,且該第二介電層覆蓋該第二金屬內連線層。其中該第一金屬內連線層與該第二金屬內連線層設於該週邊電路區。
為讓本發明之上述目的、特徵及優點能更明顯易懂,下文特舉較佳實施方式,並配合所附圖式,作詳細說明如下。然而如下之較佳實施方式
與圖式僅供參考與說明用,並非用來對本發明加以限制者。
1‧‧‧影像感應器
10‧‧‧半導體基底
12‧‧‧介電層
14‧‧‧介電層
16‧‧‧介電層
18‧‧‧光阻圖案
18a‧‧‧開口
20‧‧‧虛線圓圈處
21‧‧‧凹陷區域
21a‧‧‧側壁
21b‧‧‧底部
30‧‧‧犧牲介電層
32‧‧‧犧牲層圖案
32a‧‧‧側壁
32b‧‧‧上表面
48‧‧‧光阻圖案
56‧‧‧介電層
56a‧‧‧側壁
60‧‧‧保護層
70‧‧‧彩色濾光膜
80‧‧‧微透鏡結構
101‧‧‧主動陣列區
102‧‧‧週邊電路區
110‧‧‧感光元件
110a‧‧‧感光元件
116‧‧‧絕緣結構
120‧‧‧電晶體元件
140‧‧‧金屬內連線層
160‧‧‧金屬內連線層
560‧‧‧凹陷區域
θ1‧‧‧夾角
θ2‧‧‧夾角
θ3‧‧‧夾角
第1圖繪示的是習知CMOS影像感應器的剖面示意圖。
第2圖至第6圖為依據本發明實施例所繪示的製作影像感應器的方法示意圖。
第7圖為依據本發明實施例所繪示的影像感應器的剖面示意圖。
在下文中,將參照附圖說明細節,該些附圖中之內容亦構成說明書細節描述的一部份,並且以可實行該實施例之特例描述方式來繪示。下文實施例已描述足夠的細節俾使該領域之一般技藝人士得以具以實施。當然,亦可採行其他的實施例,或是在不悖離文中所述實施例的前提下作出任何結構性、邏輯性、及電性上的改變。因此,下文之細節描述不應被視為是限制,反之,其中所包含的實施例將由隨附的申請專利範圍來加以界定。
文中所提及的「晶圓」或「基底」等名稱可以是在表面上已有材料層或積體電路元件層的半導體基材。基底也可以指在製作過程中的半導體基底或晶圓,其上形成有不同材料層。舉例而言,晶圓或基底可以包括摻雜或未摻雜半導體、在絕緣材或半導體底材上形成的磊晶半導體、或其它已知的半導體結構。
請參閱第2圖至第6圖,其為依據本發明實施例所繪示的製作影像感應器的方法示意圖,其中相同的區域、層或元件仍沿用相同的標號。首先,如第2圖所示,影像感應器1包括一半導體基底10,在其主動陣列區101內設有複數個感光元件110,例如光二極管,彼此之間以絕緣結構116隔離。根據本發明實施例,影像感應器1可以是CMOS影像感應器。
在半導體基底10上依序沉積一介電層12以及一介電層14,其中介電層12覆蓋主動陣列區101內的感光元件110以及週邊電路區102的電晶
體元件120,介電層14覆蓋形成在介電層12上的金屬內連線層140。根據本發明實施例,介電層12以及一介電層14均為透明的介電層,例如,矽氧介電層。
接著,在介電層14的上表面形成金屬內連線層160,然後,在介電層14的上表面沉積一犧牲介電層30。根據本發明實施例,犧牲介電層30可以是氮氧化矽層、無定形碳(amorphous carbon)層或感光的高分子聚合物層,但不限於此。
如第3圖所示,接著於犧牲介電層30上形成一光阻圖案48,使光阻圖案48僅覆蓋住主動陣列區101內的犧牲介電層30,而顯露出主動陣列區101以外的犧牲介電層30。隨即進行一蝕刻製程,例如非等向性乾蝕刻製程,以光阻圖案48作為蝕刻遮罩,蝕刻被顯露出來的犧牲介電層30,直到介電層14的部分上表面被顯露出來,如此定義出一犧牲層圖案32。
根據本發明實施例,犧牲層圖案32的側壁32a略微傾斜,而與介電層14的上表面具有一夾角θ2,且夾角θ2較佳大於90度。再去除剩下的光阻圖案48。
如第4圖所示,接著進行一化學氣相沉積(CVD)製程,例如,原子層沉積(ALD)製程或者其它低溫CVD製程,於介電層14的上表面以及犧牲層圖案32上沉積一介電層56,例如矽氧介電層。再施以平坦化製程,例如化學機械研磨製程或回蝕刻製程,使犧牲層圖案32的上表面32b被顯露出來。
如第5圖所示,接著選擇性的將犧牲層圖案32移除,如此在介電層56中留下一凹陷區域560,並且顯露出介電層14的部分上表面。根據本發明實施例,凹陷區域560的周圍由介電層56的側壁56a所定義出來,且側壁56a與介電層14的上表面具有一夾角θ3,且夾角θ3較佳小於90度。
如第6圖所示,在去除犧牲層圖案32之後,可以選擇繼續於介電層56上以及凹陷區域560內共形的沉積一保護層60。當然,熟習該項技藝
者應理解第6圖中的結構僅為半成品。
根據本發明另一實施例,如第7圖所示,可以繼續於凹陷區域560內的介電層14的上表面依序形成一彩色濾光膜70以及微透鏡結構80,如此即完成影像感測器1的後段製程。由於彩色濾光膜製程以及微透鏡製程皆為習知,故其細節不再贅述。
本發明的主要特徵在於凹陷區域560周圍的介電層56的側壁56a與介電層14的上表面具有一夾角θ3,且夾角θ3小於90度,可以有效避免習知技藝中的「峽谷」蝕刻製程面臨的問題。此外,凹陷區域560顯露出介電層14的上表面,這表示入射光線的光徑上經過更少的介電層,而更能提高影像感應器的靈敏度。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。
1‧‧‧影像感應器
10‧‧‧半導體基底
12‧‧‧介電層
14‧‧‧介電層
56‧‧‧介電層
56a‧‧‧側壁
101‧‧‧主動陣列區
102‧‧‧週邊電路區
110‧‧‧感光元件
110a‧‧‧感光元件
116‧‧‧絕緣結構
120‧‧‧電晶體元件
140‧‧‧金屬內連線層
160‧‧‧金屬內連線層
560‧‧‧凹陷區域
θ3‧‧‧夾角
Claims (13)
- 一種影像感應器,包含有:一半導體基底,其具有一主動陣列區以及一週邊電路區;複數個感光元件,設於該主動陣列區內的該半導體基底中;一第一介電層,位於該半導體基底上,覆蓋該主動陣列區以及該週邊電路區;以及一第二介電層,位於該第一介電層上,其中該第二介電層中具有一凹陷區域對應於該主動陣列區,顯露出該第一介電層的上表面,且由該第二介電層的一側壁所定義出來的該凹陷區域的周圍與該第一介電層的該上表面具有一夾角,其中該夾角小於90度。
- 如申請專利範圍第1項所述的影像感應器,其中該第一介電層為矽氧介電層。
- 如申請專利範圍第1項所述的影像感應器,其中該第二介電層為矽氧介電層。
- 如申請專利範圍第1項所述的影像感應器,其中另包含有一第一金屬內連線層,設於該半導體基底上,且該第一介電層覆蓋該第一金屬內連線層。
- 如申請專利範圍第4項所述的影像感應器,其中另包含有一第二金屬內連線層,設於該第一介電層上,且該第二介電層覆蓋該第二金屬內連線層。
- 如申請專利範圍第5項所述的影像感應器,其中該第一金屬內連線層與該第二金屬內連線層設於該週邊電路區。
- 一種影像感應器的製造方法,包含有:提供一半導體基底,其具有一主動陣列區以及一週邊電路區,並且具有複數個感光元件設於該主動陣列區內;於該半導體基底上形成一第一介電層,以覆蓋該主動陣列區以及該週邊電路區;於對應該主動陣列區之該第一介電層上形成一犧牲層圖案;於未被該犧牲層圖案覆蓋之部分該第一介電層上形成一第二介電層;以及移除該犧牲層圖案以顯露出部分該第一介電層。
- 如申請專利範圍第7項所述的影像感應器製作方法,其中形成該犧牲層圖案的方法包含有:於該第一介電層上形成一犧牲層;於該犧牲層上形成一光阻圖案;以及進行一蝕刻製程移除未被該光阻圖案覆蓋之部分該犧牲層。
- 如申請專利範圍第7項所述的影像感應器製作方法,其中該犧牲層圖案包含一氮氧化矽層圖案、一無定形碳層圖案或者一感光的高分子聚合物層圖案。
- 如申請專利範圍第7項所述的影像感應器製作方法,其中該犧牲層圖案的側壁係與該第一介電層的表面具有一夾角,且該夾角係大於90度。
- 如申請專利範圍第7項所述的影像感應器製作方法,其中形成該第二介電層的步驟包含一原子層沉積製程或者一低溫化學氣相沉積製程。
- 如申請專利範圍第7項所述的影像感應器製作方法,其中形成該第二介電層之後更包含一平坦化製程以移除該犧牲層圖案上的部分該第二介電層。
- 如申請專利範圍第7項所述的影像感應器製作方法,其中移除該犧牲層圖案之後更包含於顯露出之部分該第一介電層上形成一彩色濾光膜以及一微透鏡結構。
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