TWI550336B - Photomask, pattern transfer method and method of manufacturing a flat panel display - Google Patents
Photomask, pattern transfer method and method of manufacturing a flat panel display Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
本發明係關於一種藉由將轉印用圖案進行轉印而於被轉印體上可轉印微細之圖案之光罩、圖案轉印方法及平面顯示器之製造方法。 The present invention relates to a photomask, a pattern transfer method, and a method of manufacturing a flat panel display, which are capable of transferring a fine pattern onto a transfer target by transferring a transfer pattern.
在由液晶顯示裝置所代表之平面顯示器之製造中，存在藉由形成更微細之圖案而謀求提高圖像品質之要求。於專利文獻1中，記載有一種光罩，其形成有對應於線與間隙之包含半透光部與透光部之轉印用圖案。 In the manufacture of a flat panel display represented by a liquid crystal display device, there is a demand for improving image quality by forming a finer pattern. Patent Document 1 describes a photomask in which a transfer pattern including a semi-transmissive portion and a light-transmitting portion corresponding to a line and a gap is formed.
【專利文獻1]日本專利特開2009-42753號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-42753
關於平面顯示器之配線圖案之微細化，受到關注的不僅在於平面顯示器之明亮度及反應速度之圖像品質之提高上，而且根據節能之觀點亦存在有利之方面。因此，近年來，要求平面顯示器之配線圖案之進一步微細化。隨此，平面顯示器之製造中使用之光罩亦具有期待微細之線寬精度之傾向。 Regarding the miniaturization of the wiring pattern of the flat panel display, attention is paid not only to the improvement in the image quality of the brightness of the flat panel display and the reaction speed, but also in terms of energy saving. Therefore, in recent years, the wiring pattern of the flat display has been required to be further miniaturized. Accordingly, the photomask used in the manufacture of flat panel displays has a tendency to expect fine line width accuracy.
然而，即便將具備包含遮光部與透光部之轉印用圖案之所謂二 元光罩之圖案線寬單純地微細化，亦無法使平面顯示器之配線圖案微細化。以下，對該情形時之問題點，參照圖1(a)、(b)及圖2(a)~(e)進行詳細描述。 However, even if the transfer pattern including the light shielding portion and the light transmission portion is provided, the so-called two The pattern line width of the photomask is simply miniaturized, and the wiring pattern of the flat panel display cannot be made fine. Hereinafter, the problem in this case will be described in detail with reference to FIGS. 1(a) and (b) and FIGS. 2(a) to (e).
圖1(a)係表示構成作為二元光罩之轉印用圖案之線與間隙圖案之遮光部與透光部之模式圖。此處，圖示有具備包含遮光部且具有線寬ML之線部、及包含透光部且具有間隙寬度MS之間隙部之線與間隙圖案。一組遮光部與透光部之重複單位之寬度為線與間隙圖案之間距寬度P。 Fig. 1(a) is a schematic view showing a light shielding portion and a light transmitting portion constituting a line and a gap pattern of a transfer pattern as a binary mask. Here, a line and gap pattern including a line portion including a light shielding portion and having a line width ML, and a gap portion including a light transmission portion and having a gap width MS are illustrated. The width of the repeating unit of the group of the light shielding portion and the light transmitting portion is the width P between the line and the gap pattern.
圖1(b)係表示在使圖1(a)之線與間隙圖案之間距寬度P變化之情形時，照射至形成於被轉印體上之抗蝕劑膜上之穿透光之光強度曲線之圖表。縱軸表示穿透率(%)，橫軸表示光罩上之位置(μm)。 Fig. 1(b) is a view showing the light intensity of the transmitted light irradiated onto the resist film formed on the transfer target when the line P of Fig. 1(a) and the gap pattern are changed from the width P. The chart of the curve. The vertical axis represents the transmittance (%), and the horizontal axis represents the position (μm) on the mask.
於圖1(a)所示之二元光罩之轉印用圖案中，若使線與間隙圖案之遮光部及透光部之各寬度ML、MS逐漸減小(即，減小間距寬度P)，則如圖1(b)所示，會產生經由透光部而照射至抗蝕劑膜上之穿透光之光強度降低之問題。 In the transfer pattern of the binary mask shown in FIG. 1(a), the widths ML, MS of the light-shielding portion and the light-transmitting portion of the line and gap pattern are gradually decreased (that is, the pitch width P is decreased). As shown in Fig. 1(b), the light intensity of the transmitted light that is irradiated onto the resist film via the light transmitting portion is lowered.
本發明者等人在圖1(b)所示之條件設定下，自線與間隙圖案之間距寬度為P=8μm(線寬ML=4.8μm，間隙寬度MS=3.2μm)起，至間距寬度P=4μm(線寬ML=2.8μm，間隙寬度MS=1.2μm)為止，將線寬ML與間隙寬度MS分別相對於間距寬度P而設定為P/2+0.8(μm)、P/2-0.8(μm)，模擬逐漸微細化時之穿透光之光強度變化。其結果可知，如圖1(b)之光強度曲線所示，線與間隙圖案之線寬越微細，則光強度之波形曲線之波峰位置越會顯著降低。再者，條件設定為：數值孔徑NA：0.08，相干因素σ：0.8，曝光光波長：g/h/i=1/1/1，基板：石英玻璃基板，正型抗蝕劑(P/R)膜厚：1.5μm，正型抗蝕劑為酚醛系正型抗蝕劑，此處「g/h/i」表示曝光光中包含之g線、h線、i線之各波長之強度比。 The inventors of the present invention set the distance between the line and the gap pattern from P=8 μm (line width ML=4.8 μm, gap width MS=3.2 μm) to the pitch width under the condition setting shown in FIG. 1(b). P = 4 μm (line width ML = 2.8 μm, gap width MS = 1.2 μm), and the line width ML and the gap width MS are set to P/2+0.8 (μm) and P/2-, respectively, with respect to the pitch width P. 0.8 (μm), simulating the change in light intensity of the transmitted light when it is gradually miniaturized. As a result, as shown by the light intensity curve of Fig. 1(b), the finer the line width of the line and the gap pattern, the more the peak position of the waveform of the light intensity is significantly lowered. Further, the conditions were set as follows: numerical aperture NA: 0.08, coherence factor σ: 0.8, exposure light wavelength: g/h/i = 1/1/1, substrate: quartz glass substrate, positive resist (P/R) The film thickness is 1.5 μm, and the positive resist is a phenolic positive resist. Here, "g/h/i" indicates the intensity ratio of each wavelength of the g line, the h line, and the i line included in the exposure light. .
進而，將圖1(b)之光強度曲線中之間距寬度P=8μm、7μm、6μm、5μm之線與間隙圖案之穿透光照射至被轉印體上之正型抗蝕劑(P/R)膜上之情形時所形成的抗蝕劑圖案之剖面形狀分別示於圖2(a)、(b)、(c)、(d)中。再者，將該等之照射光量(Eop)標準化為100mJ。 Further, the light having the width P=8 μm, 7 μm, 6 μm, and 5 μm in the light intensity curve of FIG. 1(b) is irradiated with the light of the gap pattern to the positive resist on the transfer target (P/ The cross-sectional shape of the resist pattern formed in the case of R) on the film is shown in Figs. 2(a), (b), (c), and (d), respectively. Furthermore, the amount of irradiation light (Eop) was normalized to 100 mJ.
如該等之圖式所示，線與間隙圖案之線寬越小，則穿透間隙寬度MS之光之強度越不足，於圖2(d)之間距寬度P=5μm時，抗蝕劑膜之線間並未分離，從而無法形成線與間隙形狀之抗蝕劑圖案。如此，不能作為後續步驟中用以形成微細之配線圖案之蝕刻遮罩而使用。 As shown in the drawings, the smaller the line width of the line and gap pattern, the less the intensity of light passing through the gap width MS is, and the resist film is at a width P=5 μm between FIG. 2(d). The lines are not separated, so that a resist pattern of a line and a gap shape cannot be formed. Thus, it cannot be used as an etching mask for forming a fine wiring pattern in a subsequent step.
因此，作為提高圖案轉印時之解像度、進行更微細之圖案化之方法，考慮作為先前LSI(Large-scale integration，大規模積體電路)製造用之技術而開發之曝光機之數值孔徑擴大、單一波長且使用有短波長之曝光。然而，於應用該等技術之情形時，必須進行巨大的投資與技術開發，無法取得與市場提供之液晶顯示裝置之價格之整合性。 Therefore, as a method of improving the resolution at the time of pattern transfer and performing finer patterning, it is considered that the numerical aperture of the exposure machine developed as a technology for manufacturing LSI (Large-scale integration) is expanded. Single wavelength and exposure with short wavelengths. However, in the case of applying such technologies, enormous investment and technology development are required, and integration with the price of the liquid crystal display device provided by the market cannot be obtained.
且說，如圖2(d)所示，對於光強度之波形曲線之波峰位置伴隨圖案之微細化而顯著降低之現象，作為用以彌補該光量不足之方法，考慮增加曝光裝置之照射光量。認為若照射光量增加，則穿透間隙部之光量增大，故而可使抗蝕劑圖案之形狀優化，即，可分離成線與間隙圖案之形狀。但是，為此而大光量地變更曝光裝置之光源並不現實，且必須大幅增加曝光時之掃描曝光時間。 In addition, as shown in FIG. 2(d), the peak position of the waveform of the light intensity is remarkably lowered by the miniaturization of the pattern, and as a method for compensating for the shortage of the amount of light, it is considered to increase the amount of illumination light of the exposure device. It is considered that when the amount of the irradiated light is increased, the amount of light penetrating the gap portion is increased, so that the shape of the resist pattern can be optimized, that is, the shape of the line and the gap pattern can be separated. However, it is not realistic to change the light source of the exposure device with a large amount of light, and it is necessary to greatly increase the scanning exposure time at the time of exposure.
實際上，圖2(e)中表示藉由增加照射光量而使抗蝕劑圖案良好地分離之情形。此處，相對於圖2(a)~(d)中使用之照射量，必須為1.5倍之照射光量。 Actually, FIG. 2(e) shows a case where the resist pattern is well separated by increasing the amount of irradiation light. Here, the amount of irradiation light used in 1.5 (a) to (d) must be 1.5 times the amount of irradiation light.
且說，於上述專利文獻1中記載有一種光罩，其係藉由使形成於透明基板上之半透光膜圖案化而形成有特定之圖案、且具有透光部與半透光部之光罩，在藉由穿透該光罩之曝光光而於被轉印體上形成有線寬未達3μm之轉印圖案之光罩中，上述透光部或上述半透光部之至 少一者具有未達3μm之線寬之部分，且包含包括上述透光部與上述半透光部之圖案。 Further, Patent Document 1 discloses a photomask which is formed by patterning a semi-transmissive film formed on a transparent substrate to form a specific pattern and having light of a light transmitting portion and a semi-light transmitting portion. a cover in which a transfer pattern having a line width of less than 3 μm is formed on the transfer target by the exposure light penetrating the mask, the light transmitting portion or the semi-transmissive portion The lesser one has a portion having a line width of less than 3 μm, and includes a pattern including the light transmitting portion and the semi-light transmitting portion.
根據上述專利文獻1之光罩，認為可抑制圖1(b)中將圖案微細化時所產生之透光部之光強度波峰位置之降低，且可形成線與間隙圖案形狀之抗蝕劑圖案。此意味著形成於透明基板上之半透光膜之圖案可輔助包含透光部之轉印用圖案整體之穿透光量，使其達到可使抗蝕劑實行圖案化(即正型抗蝕劑藉由顯影而可去除)之必要光量。 According to the reticle of the above-mentioned Patent Document 1, it is considered that the reduction of the light intensity peak position of the light transmitting portion which is generated when the pattern is made fine in FIG. 1(b) can be suppressed, and the resist pattern of the line and gap pattern shape can be formed. . This means that the pattern of the semi-transmissive film formed on the transparent substrate can assist the entire amount of light transmitted through the transfer pattern including the light-transmitting portion, so that the resist can be patterned (ie, a positive resist). The amount of light necessary to be removed by development.
另一方面，要求近年來之平面顯示器之配線圖案之進一步微細化，又，產生進一步提高圖案化之穩定性或精度之要求。 On the other hand, it is required to further refine the wiring pattern of the flat panel display in recent years, and to further improve the stability or accuracy of patterning.
本發明係鑒於上述問題點而完成者，其目的在於提供一種可確實且精緻地轉印微細圖案之光罩、圖案轉印方法及平面顯示器之製造方法。 The present invention has been made in view of the above problems, and an object thereof is to provide a photomask, a pattern transfer method, and a method of manufacturing a flat panel display capable of accurately and delicately transferring a fine pattern.
(1)為達成上述目的，本發明之光罩之特徵在於：其係具備轉印用圖案者，該轉印用圖案係於透明基板上具有透光部、形成有穿透曝光光之一部分之半透光膜之半透光部、及形成有遮光性之膜之遮光部者；上述半透光膜相對於上述轉印用圖案之轉印中使用之曝光光之代表波長，具有2~60%之穿透率、及90°以下之相位偏移作用，上述半透光部係與上述遮光部之邊緣鄰接，且形成為不會藉由曝光裝置而解像之寬度者。 (1) In order to achieve the above object, a photomask according to the present invention is characterized in that it has a pattern for transfer, and the transfer pattern has a light transmitting portion on a transparent substrate and is formed with a part of penetrating exposure light. a semi-transmissive portion of the semi-transmissive film and a light-shielding portion of the film having a light-shielding property; and the representative wavelength of the exposure light used for transfer of the semi-transmissive film to the transfer pattern has 2 to 60 The transmittance of % and the phase shifting effect of 90° or less, the semi-transmissive portion is adjacent to the edge of the light-shielding portion, and is formed to have a width that is not resolved by the exposure device.
(2)較佳為，於上述(1)之光罩中，可形成為如下之構成：上述半透光部具有分別鄰接於上述遮光部之對向之邊緣而設置之第1半透光部、及第2半透光部，上述第1半透光部與第2半透光部之寬度分別為不會藉由曝光裝置而解像之固定寬度，且為彼此相等之寬度。 (2) Preferably, in the reticle according to (1), the semi-transmissive portion has a first semi-transmissive portion that is provided adjacent to an opposite edge of the light-shielding portion. And the second semi-transmissive portion, wherein the widths of the first semi-transmissive portion and the second semi-transmissive portion are respectively fixed widths that are not resolved by the exposure device, and are equal to each other.
(3)較佳為，於上述(1)或(2)之光罩中，可形成為如下之構成：上述轉印用圖案係線與間隙圖案，且於被轉印體上，形成有線寬或間隙 寬度未達3μm之線與間隙。 (3) Preferably, in the photomask according to (1) or (2), the transfer pattern line and the gap pattern are formed, and a line width is formed on the transfer target. Or gap Lines and gaps up to 3 μm wide.
(4)較佳為，於上述(1)之光罩中，可形成為如下之構成：上述半透光部係在藉由連續之上述遮光部而包圍之區域中，與上述遮光部之邊緣鄰接，且形成為不會藉由曝光裝置而解像之固定寬度者。 (4) Preferably, in the reticle according to (1), the semi-transmissive portion is formed in a region surrounded by the continuous light-shielding portion and an edge of the light-shielding portion Adjacent, and formed as a fixed width that is not resolved by the exposure device.
(5)較佳為，於上述(1)或(4)之光罩中，可形成為如下之構成：上述轉印用圖案係通孔圖案，且係於被轉印體上形成有具有未達3μm之孔徑之通孔者。 (5) It is preferable that the photomask of the above (1) or (4) is configured such that the transfer pattern is a via pattern and is formed on the transfer target. A through hole of 3 μm aperture.
(6)為達成上述目的，本發明之圖案轉印方法之特徵在於：使用如上述(1)至(5)之任一項之光罩，且使用曝光裝置而將上述轉印用圖案轉印至被轉印體上。 (6) In order to achieve the above object, the pattern transfer method of the present invention is characterized in that the photomask according to any one of the above (1) to (5) is used, and the transfer pattern is transferred using an exposure device. To the transferred body.
(7)為達成上述目的，本發明之平面顯示器之製造方法之特徵在於：使用如上述(6)之圖案轉印方法。 (7) In order to achieve the above object, a method of manufacturing a flat panel display of the present invention is characterized in that a pattern transfer method as in the above (6) is used.
根據本發明之光罩、圖案轉印方法及平面顯示器之製造方法，可獲得一種於被轉印體上可確實且精緻地轉印微細圖案之光罩。 According to the photomask, the pattern transfer method, and the method of manufacturing the flat panel display of the present invention, it is possible to obtain a photomask which can accurately and finely transfer a fine pattern on the object to be transferred.
1、2、3‧‧‧光罩 1, 2, 3‧‧‧ masks
10‧‧‧透明基板 10‧‧‧Transparent substrate
20‧‧‧半透光膜 20‧‧‧ Semi-transparent film
21‧‧‧半透光部 21‧‧‧ semi-transmission department
21A‧‧‧第1半透光部 21A‧‧‧1st semi-transmission department
21B‧‧‧第2半透光部 21B‧‧‧2nd semi-transmission department
30‧‧‧遮光膜 30‧‧‧Shade film
31‧‧‧遮光部 31‧‧‧Lighting Department
40‧‧‧光阻膜 40‧‧‧Photoresist film
41、51‧‧‧抗蝕劑圖案 41, 51‧‧‧resist pattern
L‧‧‧線 L‧‧‧ line
S‧‧‧間隙 S‧‧‧ gap
圖1(a)係表示二元光罩之線與間隙圖案之模式圖，(b)係表示藉由(a)之二元光罩而產生之被轉印體上之光強度曲線之圖表。 Fig. 1(a) is a schematic view showing a line and a gap pattern of a binary mask, and Fig. 1(b) is a graph showing a light intensity curve on a transfer target produced by the binary mask of (a).
圖2(a)~(d)係分別表示藉由圖1(b)之光強度曲線中之間距寬度為P=8~5μm之線與間隙圖案之穿透光而形成之抗蝕劑圖案之剖面形狀。(e)係表示在與(d)相同之間距寬度下，使曝光裝置之照射光量增加至1.5倍時之抗蝕劑圖案之剖面形狀。 2(a) to (d) show a resist pattern formed by the light passing through the line and the gap pattern in the light intensity curve of FIG. 1(b) with a width of P=8 to 5 μm, respectively. Profile shape. (e) shows the cross-sectional shape of the resist pattern when the amount of irradiation light of the exposure apparatus is increased by 1.5 times in the same width as (d).
圖3(a)係表示本發明之第1實施形態之線與間隙圖案之光罩之剖面模式圖，(b)係(a)之部分放大圖。 Fig. 3 (a) is a schematic cross-sectional view showing a mask of a line and a gap pattern according to the first embodiment of the present invention, and (b) is a partially enlarged view of (a).
圖4(a)係本發明之第2實施形態之線與間隙圖案之光罩之剖面模式圖，(b)係(a)之部分放大圖。 Fig. 4 (a) is a schematic cross-sectional view showing a reticle of a line and a gap pattern according to a second embodiment of the present invention, and (b) is a partially enlarged view of (a).
圖5(a)~(g)係表示圖3所示之光罩之製造步驟之流程圖。 5(a) to 5(g) are flowcharts showing the steps of manufacturing the photomask shown in Fig. 3.
圖6(a)~(g)係表示圖4所示之光罩之製造步驟之流程圖。 6(a) to 6(g) are flowcharts showing the steps of manufacturing the photomask shown in Fig. 4.
圖7(a)~(f)係表示圖3所示之光罩之其他製造步驟之流程圖。 7(a) to (f) are flowcharts showing other manufacturing steps of the reticle shown in Fig. 3.
圖8係表示將轉印用圖案設為線與間隙圖案之光罩之比較例1(二元光罩)。(a)表示光罩影像。(b)表示照射至被轉印體上之穿透光之光強度分佈。(c)表示模擬結果即光強度分佈之波峰強度、對比度、照射光量(基準)、及抗蝕劑膜損耗(基準)。(d)表示藉由比較例1之二元光罩而形成之抗蝕劑圖案形狀。 Fig. 8 shows a comparative example 1 (binary mask) in which a transfer pattern is used as a mask of a line and a gap pattern. (a) shows the reticle image. (b) shows the light intensity distribution of the transmitted light irradiated onto the object to be transferred. (c) shows the peak intensity, contrast, amount of irradiation light (reference), and resist film loss (reference) of the simulation result, that is, the light intensity distribution. (d) shows the shape of a resist pattern formed by the binary mask of Comparative Example 1.
圖9係表示將轉印用圖案設為線與間隙圖案之光罩之參考例1(穿透輔助光罩1)。(a)表示光罩影像。(b)表示照射至形成於被轉印體上之抗蝕劑膜上之穿透光之光強度分佈。(c)表示模擬結果即光強度分佈之波峰強度、對比度、照射光量、及抗蝕劑膜損耗。(d)表示藉由參考例1之穿透輔助光罩1而形成之抗蝕劑圖案形狀。 Fig. 9 shows a reference example 1 (penetrating auxiliary mask 1) in which a transfer pattern is used as a mask for a line and a gap pattern. (a) shows the reticle image. (b) shows the light intensity distribution of the transmitted light irradiated onto the resist film formed on the object to be transferred. (c) shows the peak intensity, contrast, amount of illumination, and resist film loss of the simulation result, that is, the light intensity distribution. (d) shows the shape of the resist pattern formed by the penetration of the auxiliary mask 1 of Reference Example 1.
圖10係表示將轉印用圖案設為線與間隙圖案之光罩之實施例1(穿透輔助光罩2)。(a)表示光罩影像。(b)表示照射至形成於被轉印體上之抗蝕劑膜上之穿透光之光強度分佈。(c)表示模擬結果即光強度分佈之波峰強度、對比度、照射光量、及抗蝕劑膜損耗。(d)表示藉由實施例1之穿透輔助光罩2而形成之抗蝕劑圖案形狀。 Fig. 10 is a view showing a first embodiment (penetrating auxiliary mask 2) in which a transfer pattern is used as a mask for a line and a gap pattern. (a) shows the reticle image. (b) shows the light intensity distribution of the transmitted light irradiated onto the resist film formed on the object to be transferred. (c) shows the peak intensity, contrast, amount of illumination, and resist film loss of the simulation result, that is, the light intensity distribution. (d) shows the shape of the resist pattern formed by the penetration auxiliary mask 2 of the first embodiment.
圖11(a)~(c)係表示分別將轉印用圖案設為通孔圖案之光罩之比較例2(二元光罩)、參考例2(穿透輔助光罩3)、實施例2(穿透輔助光罩4)之光罩影像。(d)係模擬評估項目及其說明圖。 11( a ) to ( c ) show a comparative example 2 (binary mask) and a reference example 2 (penetrating auxiliary mask 3) in which the transfer pattern is a through-hole pattern mask, and examples. 2 (through the auxiliary mask 4) reticle image. (d) is a simulation evaluation project and its explanatory diagram.
圖12係對圖11之比較例2、參考例2、實施例2之模擬結果進行比較者，(a)係表示照射光量之圖表，(b)係表示抗蝕劑傾斜角之圖表，(c)係表示抗蝕劑膜損耗之圖表。 Fig. 12 is a comparison of the simulation results of Comparative Example 2, Reference Example 2, and Example 2 of Fig. 11, (a) is a graph showing the amount of irradiation light, and (b) is a graph showing the inclination angle of the resist, (c) ) is a graph showing the loss of the resist film.
本發明之光罩具備轉印用圖案，該轉印用圖案係於透明基板上 具有：透光部；形成有穿透曝光光之一部分之半透光膜之半透光部；及形成有遮光性之膜之遮光部。而且，本發明之光罩之特徵在於：半透光膜相對於轉印用圖案之轉印中使用之曝光光之代表波長，具有2~60%之穿透率、及90°以下之相位偏移作用，半透光部係與遮光部之邊緣鄰接，且形成為不會藉由曝光裝置而解像之寬度者。將此種本發明之光罩之實施形態例示於圖3~圖7(剖面)、圖10(a)及圖11(c)(俯視)中。 The photomask of the present invention is provided with a transfer pattern which is attached to a transparent substrate And a light transmissive portion; a semi-transmissive portion having a semi-transmissive film penetrating a portion of the exposure light; and a light shielding portion forming a light-shielding film. Further, the reticle of the present invention is characterized in that the semi-transmissive film has a transmittance of 2 to 60% and a phase deviation of 90 or less with respect to the representative wavelength of the exposure light used in the transfer of the transfer pattern. In the shifting action, the semi-transmissive portion is adjacent to the edge of the light-shielding portion, and is formed to have a width that is not resolved by the exposure device. The embodiment of the reticle of the present invention is exemplified in Figs. 3 to 7 (cross section), Fig. 10 (a), and Fig. 11 (c) (top view).
圖3(a)及(b)係關於本發明之第1實施形態之線與間隙圖案形成用之光罩1所具有之轉印用圖案之剖面模式圖及部分放大圖。又，圖4(a)及(b)係關於本發明之第2實施形態之線與間隙圖案形成用之光罩2所具有之轉印用圖案之剖面模式圖及部分放大圖。將俯視該等光罩1、2時之光罩影像示於圖10(a)中。進而，將俯視本發明之第3實施形態之通孔圖案形成用之光罩3之光罩影像示於圖11(c)中。 3 (a) and (b) are a schematic cross-sectional view and a partial enlarged view of a transfer pattern included in the mask 1 for forming a line and a gap pattern according to the first embodiment of the present invention. 4(a) and 4(b) are a cross-sectional schematic view and a partial enlarged view of a transfer pattern included in the mask 2 for forming a line and a gap pattern according to a second embodiment of the present invention. The reticle image when the masks 1 and 2 are viewed from above is shown in Fig. 10(a). Furthermore, the reticle image of the reticle 3 for forming a via pattern according to the third embodiment of the present invention is shown in Fig. 11(c).
再者，於本說明書中，對於在被轉印體上用以形成線與間隙圖案之光罩所具有之轉印圖案，稱為線與間隙圖案，又，對於在被轉印體上用以形成通孔圖案之光罩所具有之轉印圖案，稱為通孔圖案。此處，作為轉印圖案之線與間隙圖案中之線圖案係設為透光部以外之部分(遮光部及半透光部)，間隙圖案係指透光部。又，將轉印圖案中之通孔圖案設為透光部。 Furthermore, in the present specification, a transfer pattern which is provided for a photomask for forming a line and gap pattern on a transfer target is referred to as a line and gap pattern, and is also used for the transfer target. The transfer pattern of the photomask forming the via pattern is referred to as a via pattern. Here, the line pattern in the line and the gap pattern as the transfer pattern is a portion other than the light transmitting portion (light shielding portion and semi-light transmitting portion), and the gap pattern refers to the light transmitting portion. Further, the through hole pattern in the transfer pattern is referred to as a light transmitting portion.
以下說明之實施形態中，列舉具體例主要對線與間隙圖案之光罩1、2進行說明。 In the embodiment described below, the masks 1 and 2 of the line and gap patterns will be mainly described as a specific example.
具有本實施形態之線與間隙圖案之光罩1、2係將形成於透明基板10上之半透光膜20與遮光性之膜(以下，稱為遮光膜)30實施圖案化而形成。光罩1、2之不同在於，半透光膜20與遮光膜30之積層順序互為相反。 The masks 1 and 2 having the line and gap patterns of the present embodiment are formed by patterning the semi-transmissive film 20 formed on the transparent substrate 10 and a light-shielding film (hereinafter referred to as a light-shielding film) 30. The masks 1 and 2 are different in that the order of lamination of the semi-transmissive film 20 and the light-shielding film 30 is opposite to each other.
首先，對構成本實施形態之光罩1、2之透明基板10、半透光膜20、遮光膜30進行說明。 First, the transparent substrate 10, the semi-transmissive film 20, and the light shielding film 30 constituting the masks 1 and 2 of the present embodiment will be described.
作為構成本實施形態之光罩1、2之透明基板10，使用將表面研磨後之石英玻璃基板等。透明基板10之大小並無特別限制，根據使用光罩1、2進行曝光之基板(例如平面顯示器用基板等)而適當選定。作為此種透明基板10，例如使用一邊為300mm以上之矩形基板。 As the transparent substrate 10 constituting the masks 1 and 2 of the present embodiment, a quartz glass substrate or the like obtained by polishing the surface is used. The size of the transparent substrate 10 is not particularly limited, and is appropriately selected depending on the substrate (for example, a substrate for a flat display) that is exposed by the masks 1 and 2. As such a transparent substrate 10, for example, a rectangular substrate having a side of 300 mm or more is used.
如圖3(a)及圖4(a)所示，本實施形態之光罩1、2具有：包含半透光部21與遮光部31之線L、及包含透光部之間隙S。 As shown in FIGS. 3(a) and 4(a), the masks 1 and 2 of the present embodiment have a line L including the semi-transmissive portion 21 and the light-shielding portion 31, and a gap S including the light-transmitting portion.
在穿透曝光光之透光部中，較佳為透明基板10露出。半透光部21係於透明基板10上形成半透光膜20而成，該半透光膜20可為單層，亦可為藉由複數層之積層而形成者。該半透光膜20相對於曝光光中所含之代表波長之光，具有2~60%之穿透率，且相對於上述代表波長，具有90°以下之相位偏移作用。圖3(a)中之遮光部係於半透光膜上積層遮光膜而成，圖4(a)中之遮光部係於遮光膜上積層半透光膜而成。 In the light transmitting portion penetrating the exposure light, the transparent substrate 10 is preferably exposed. The semi-transmissive portion 21 is formed by forming a semi-transmissive film 20 on the transparent substrate 10. The semi-transmissive film 20 may be a single layer or may be formed by laminating a plurality of layers. The semi-transmissive film 20 has a transmittance of 2 to 60% with respect to light of a representative wavelength contained in the exposure light, and has a phase shifting effect of 90 or less with respect to the above representative wavelength. The light-shielding portion in Fig. 3(a) is formed by laminating a light-shielding film on the semi-transmissive film, and the light-shielding portion in Fig. 4(a) is formed by laminating a semi-transmissive film on the light-shielding film.
半透光膜所具備之光學特性中，所謂90°以下之相位偏移作用，較佳為相對於上述曝光光之代表波長之相位偏移量為超過0°且為90°以下。該情形時之半透光部21與其說具有所謂發揮相位偏移作用而提高對比度之功能，倒不如說具有輔助透光部之穿透光量之功能。因此，可認為半透光膜20係穿透輔助膜，且可認為半透光部21係穿透輔助部。 In the optical characteristics of the semi-transmissive film, the phase shifting action of 90° or less is preferably such that the phase shift amount with respect to the representative wavelength of the exposure light is more than 0° and not more than 90°. In this case, the semi-transmissive portion 21 has a function of increasing the contrast by performing a phase shifting action, and has a function of assisting the amount of transmitted light of the light transmitting portion. Therefore, it is considered that the semi-transmissive film 20 penetrates the auxiliary film, and it is considered that the semi-light transmitting portion 21 penetrates the auxiliary portion.
再者，經本發明者等人之研究而發現，若假設半透光膜20之相位偏移量為接近180°者，則在半透光部21(即，圖中之第1及第2半透光部21A、21B)與透光部之交界上經相位反轉之繞射光會相互干涉，從而阻礙本發明之特徵之一即穿透光量之輔助功能。 Furthermore, it has been found by the inventors of the present invention that if the phase shift amount of the semi-transmissive film 20 is close to 180°, the semi-transmissive portion 21 (that is, the first and second halves in the figure) The diffracted light which is phase-reversed at the boundary between the light transmitting portions 21A, 21B) and the light transmitting portion interferes with each other, thereby hindering an auxiliary function of one of the features of the present invention, that is, the amount of transmitted light.
又考慮到，於相位偏移量過小之情形時，構成半透光膜20之素 材之選擇並不容易，於相位偏移量過大之情形時，會產生如上所述反相位之光之干涉而損及穿透光量之輔助效果，從而較理想的是選擇半透光膜20之素材與膜厚。半透光膜20之相位偏移量之範圍係設為超過0°、且90°以下(其係指以弧度表示時，為(2n-1/2)π~(2n+1/2)π(n為整數)之範圍)，較佳為5~60°，更佳為5~45°。 It is also considered that when the phase shift amount is too small, the semi-transmissive film 20 is formed. The selection of the material is not easy. When the phase shift amount is too large, the interference of the opposite phase light as described above may be caused to damage the amount of the transmitted light. Therefore, it is preferable to select the semi-transmissive film 20 The material and film thickness. The range of the phase shift amount of the semi-transmissive film 20 is set to be more than 0° and not more than 90° (which is (2n-1/2)π~(2n+1/2)π when expressed in radians. (n is an integer) range, preferably 5 to 60°, more preferably 5 to 45°.
所謂半透光膜20之穿透率，係指將透明基板10相對於上述代表波長之穿透率設為100%時之半透光膜20的穿透率。若半透光膜20之穿透率過小，則無法充分發揮本發明之穿透光量之輔助功能，若穿透率過大，則半透光膜之膜厚控制等光罩製造之難度變高，故而將半透光膜20之穿透率設為上述之2~60%之範圍。再者，半透光膜20之較佳之穿透率範圍為10~50%，更佳為10~35%，進而更佳為15~30%。 The transmittance of the semi-transmissive film 20 refers to the transmittance of the semi-transmissive film 20 when the transmittance of the transparent substrate 10 with respect to the above-mentioned representative wavelength is 100%. If the transmittance of the semi-transmissive film 20 is too small, the auxiliary function of the amount of transmitted light of the present invention cannot be sufficiently exerted. If the transmittance is too large, the film thickness control of the semi-transmissive film is difficult to manufacture, and the difficulty of manufacturing the mask is high. Therefore, the transmittance of the semi-transmissive film 20 is set to be in the range of 2 to 60% as described above. Further, the transmissive film 20 preferably has a transmittance of 10 to 50%, more preferably 10 to 35%, and still more preferably 15 to 30%.
此處，作為上述曝光光之代表波長，於曝光光包含複數波長之情形時(例如，於使用包含i線、h線、g線之光源之情形時)，可設為該等波長之任一者。例如，可將i線設為代表波長。對於該等波長之任一者，均更佳為滿足上述數值範圍。 Here, as the representative wavelength of the exposure light, when the exposure light includes a plurality of wavelengths (for example, when a light source including an i line, an h line, or a g line is used), any of the wavelengths may be set. By. For example, the i line can be set to represent the wavelength. It is more preferable for any of these wavelengths to satisfy the above numerical range.
遮光膜30亦可未必具有相對於曝光光之完全之遮光性。於(僅以遮光膜30之單層或以遮光膜30與半透光膜20之積層)而形成有遮光部31時，只要該部分之曝光光穿透率小於半透光部21之曝光光穿透率即可。就積層之情形時之遮光部31之較佳之曝光光穿透率而言，較佳為將遮光膜30與半透光膜20積層時，相對於曝光光之光學濃度OD(Optical Density)為3以上，更佳為遮光膜單獨且OD為3以上。 The light shielding film 30 may not necessarily have complete light blocking properties with respect to the exposure light. When the light shielding portion 31 is formed only by a single layer of the light shielding film 30 or a laminate of the light shielding film 30 and the semi light transmission film 20, as long as the exposure light transmittance of the portion is smaller than that of the semi-light transmission portion 21 The penetration rate is OK. In the case of the preferred exposure light transmittance of the light shielding portion 31 in the case of lamination, it is preferable that the optical density OD (Optical Density) with respect to the exposure light is 3 when the light shielding film 30 and the semi-transmissive film 20 are laminated. Above, it is more preferable that the light shielding film is separate and the OD is 3 or more.
又，遮光部31亦可由遮光膜30單獨形成，但較佳為如圖3及圖4所示，以半透光膜20與遮光膜30之積層而構成。於該情形時，積層順序並無限制。 Further, the light shielding portion 31 may be formed of the light shielding film 30 alone. However, as shown in FIGS. 3 and 4, the light shielding portion 31 is preferably formed by laminating the semi-transmissive film 20 and the light shielding film 30. In this case, there is no limit to the order of the layers.
關於與遮光部31之邊緣鄰接而形成有本實施形態之半透光部21 之情形，將線與間隙圖案之情形示於圖10(a)中，將通孔圖案之情形示於圖11(c)中。如該等圖式所示，任一情形時，半透光部21均與遮光部31之邊緣鄰接，且亦與透光部鄰接。即，半透光部21係位於遮光部31與透光部之間。本實施形態中，半透光部21形成為固定寬度。 The semi-transmissive portion 21 of the present embodiment is formed adjacent to the edge of the light shielding portion 31. In the case of the line and gap pattern, the case of the via pattern is shown in Fig. 11(c). As shown in the drawings, in either case, the semi-transmissive portion 21 is adjacent to the edge of the light shielding portion 31, and is also adjacent to the light transmitting portion. That is, the semi-transmissive portion 21 is located between the light shielding portion 31 and the light transmitting portion. In the present embodiment, the semi-transmissive portion 21 is formed to have a fixed width.
以下，列舉線與間隙圖案之情形為具體例，一面參照圖3、圖4及圖10，一面對第1及第2半透光部21A、21B進行詳細描述。 Hereinafter, a case where the line and the gap pattern are listed will be described in detail with reference to FIGS. 3, 4, and 10, and the first and second semi-transmissive portions 21A and 21B will be described in detail.
圖10(a)所示之第1及第2半透光部21A、21B分別鄰接於遮光部31之兩側之邊緣，且形成為不會藉由曝光裝置而解像之寬度。 The first and second semi-transmissive portions 21A and 21B shown in Fig. 10(a) are adjacent to the edges of both sides of the light shielding portion 31, and are formed to have a width that is not resolved by the exposure device.
一般而言，於LCD用曝光裝置(下述)中，將解像限度設為3μm左右。本實施形態之第1及第2半透光部21A、21B之寬度為未達該3μm之尺寸。因此，成為於曝光時於被轉印體上不會解像之程度之寬度。即，根據特定之曝光條件，在對轉印用圖案照射曝光光時，被轉印體接收之穿透光之光強度曲線上，在與第1及第2半透光部21A、21B相當之部分中，並未觀測到獨立之(非連續之)圖案形狀，而是描繪有在透光部之光強度之波峰、與遮光部31之光強度之波谷之間順利地連續之曲線。將該狀態示於圖10(b)中。 In general, in the exposure apparatus for LCD (described below), the resolution limit is set to about 3 μm. The widths of the first and second semi-transmissive portions 21A and 21B of the present embodiment are not up to the size of 3 μm. Therefore, it is a width which does not resolve on the to-be-transferred body at the time of exposure. In other words, when the exposure pattern is irradiated with the exposure light according to the specific exposure conditions, the light intensity curve of the transmitted light received by the transfer target is equivalent to the first and second semi-transmissive portions 21A and 21B. In the part, an independent (non-continuous) pattern shape was not observed, but a curve in which the peak of the light intensity at the light transmitting portion and the valley of the light intensity of the light shielding portion 31 were smoothly continued was drawn. This state is shown in Fig. 10 (b).
此處，圖10(a)所示之與遮光部31之線之兩邊緣鄰接而設置之固定寬度之第1及第2半透光部21A、21B於上述光強度曲線中，並未作為獨立之(非連續之)圖案而呈現，此處起到對透光部之波峰部分之光量進行輔助之作用。藉此，於所形成之抗蝕劑圖案之一側面中，殘膜量單調增加、或單調減少。 Here, the first and second semi-transmissive portions 21A and 21B having a fixed width which are provided adjacent to both edges of the line of the light shielding portion 31 shown in Fig. 10(a) are not independent in the light intensity curve. It is present in a (non-continuous) pattern, which serves to assist the amount of light in the peak portion of the light transmitting portion. Thereby, the amount of residual film monotonously increases or monotonously decreases in one of the side faces of the formed resist pattern.
再者，關於圖8~圖10所示之光強度曲線、及由此而形成之抗蝕劑圖案形狀，任一者均係藉由光學模擬而獲得者。作為模擬條件，考慮用於圖案轉印之曝光裝置之光學條件而設定。此處，可將用於圖案轉印之曝光裝置作為標準的LCD(LCD：Liquid Crystal Display，液晶顯示器)用曝光裝置。於該情形時，例如可將數值孔徑NA設為0.06~ 0.10，且將相干因素σ設為0.5~1.0之範圍。此種曝光裝置一般而言，係將3μm左右作為解像限度。 Further, any of the light intensity curves shown in FIGS. 8 to 10 and the shape of the resist pattern formed thereby are obtained by optical simulation. As a simulation condition, it is set in consideration of the optical conditions of the exposure apparatus used for pattern transfer. Here, the exposure apparatus for pattern transfer can be used as a standard exposure apparatus for an LCD (Liquid Crystal Display). In this case, for example, the numerical aperture NA can be set to 0.06~ 0.10, and the coherence factor σ is set to a range of 0.5 to 1.0. Such an exposure apparatus generally has a resolution of about 3 μm.
當然，本發明亦可於更廣範圍之使用有曝光裝置之圖案轉印時應用。例如，可將數值孔徑NA設為0.06~0.14、或設為0.06~0.15之範圍。對於數值孔徑NA超過0.08之高解像度之曝光裝置亦產生要求，本發明亦可應用於該等。 Of course, the present invention can also be applied to a wider range of pattern transfer using exposure devices. For example, the numerical aperture NA can be set to 0.06 to 0.14 or set to a range of 0.06 to 0.15. There is also a demand for an exposure apparatus having a high resolution of a numerical aperture NA exceeding 0.08, and the present invention can also be applied to such.
此種曝光裝置中，作為光源，包含i線、h線、g線，可使用包含所有該等之照射光(對單一光源而言，其係較寬之光源，故而以下亦稱為「寬光」)。於該情形時，亦可將代表波長設為i線、h線、g線之任一者為如上所述。於模擬時，為了單純化而可將該等之強度比設為1：1：1，或者亦可設為考慮實際使用之曝光裝置之強度比後之比率。 In such an exposure apparatus, as the light source, i-line, h-line, and g-line are included, and all of the illumination light (for a single light source, which is a wide light source) can be used, and therefore, hereinafter, it is also referred to as "wide light. "). In this case, the representative wavelength may be set to any of the i-line, the h-line, and the g-line as described above. In the simulation, the intensity ratio may be set to 1:1:1 for simplification, or may be set to a ratio after considering the intensity ratio of the exposure device actually used.
返回至圖10，作為本發明之光罩之較佳之實施形態，半透光部21具有分別鄰接於遮光部31之對向之邊緣而設置之第1半透光部21A及第2半透光部21B。而且，第1半透光部21A與第2半透光部21B之寬度分別為不會藉由曝光裝置而解像之固定寬度，且可設為彼此相等之寬度。 Returning to Fig. 10, as a preferred embodiment of the reticle of the present invention, the semi-transmissive portion 21 has a first semi-transmissive portion 21A and a second semi-transparent light which are respectively disposed adjacent to opposite edges of the light-shielding portion 31. Part 21B. Further, the widths of the first semi-transmissive portion 21A and the second semi-transmissive portion 21B are fixed widths that are not resolved by the exposure device, and may be equal to each other.
此種光罩例如如圖3(a)、(b)所示，具備轉印用圖案，該轉印用圖案包含：使積層於透明基板10上之半透光膜20與遮光膜30分別圖案化而形成之透光部(參照圖中之符號S)、半透光部20、及遮光部30，透光部使透明基板10露出，遮光部31係於透明基板10上，於半透光膜20上積層遮光膜30而形成，半透光部21係於透明基板10上形成半透光膜20而成，半透光部21包含：與遮光部31之第1邊緣鄰接而形成之第1半透光部21A、及與遮光部31之與第1邊緣對向之第2邊緣鄰接而形成之第 2半透光部21B，第1及第2半透光部21A、21B之寬度分別為不會藉由曝光裝置而解像之固定寬度，且具有彼此相等之寬度。 For example, as shown in FIGS. 3(a) and 3(b), the mask includes a transfer pattern including a pattern of the semi-transmissive film 20 and the light-shielding film 30 laminated on the transparent substrate 10, respectively. The transparent portion (see the symbol S in the figure), the semi-transmissive portion 20, and the light-shielding portion 30 are formed, the transparent portion 10 is exposed, and the light-shielding portion 31 is attached to the transparent substrate 10 to be semi-transparent. The light-shielding film 30 is formed on the film 20, and the semi-transmissive portion 21 is formed on the transparent substrate 10 to form the semi-transmissive film 20. The semi-transmissive portion 21 includes a portion adjacent to the first edge of the light-shielding portion 31. a semi-transmissive portion 21A and a second portion adjacent to the second edge of the light-shielding portion 31 facing the first edge In the two semi-transmissive portions 21B, the widths of the first and second semi-transmissive portions 21A and 21B are fixed widths that are not resolved by the exposure device, and have widths equal to each other.
上述之光罩1亦可以如下方式而表現。 The photomask 1 described above can also be expressed as follows.
光罩1係具備轉印用圖案者，該轉印用圖案包含：使該透明基板10上之半透光膜20及遮光膜30分別圖案化而形成之透光部、半透光部20、及遮光部30，透光部使透明基板10露出，遮光部31係於透明基板10上，於半透光膜20上積層遮光膜30而形成，半透光部21係於透明基板10上，形成半透光膜20而成，半透光部21包含：與透光部之第1邊緣鄰接而形成之第1半透光部21A、及與透光部之與第1邊緣對向之第2邊緣鄰接而形成之第2半透光部21B，第1及第2半透光部21A、21B之寬度分別為不會藉由曝光裝置而解像之固定寬度，且具有彼此相等之寬度。 The photomask 1 includes a transfer pattern, and the transfer pattern includes a light-transmissive portion and a semi-transmissive portion 20 which are formed by patterning the semi-transmissive film 20 and the light-shielding film 30 on the transparent substrate 10, respectively. And the light-shielding portion 30, the transparent substrate 10 is exposed by the light-transmitting portion, the light-shielding portion 31 is formed on the transparent substrate 10, and the light-shielding film 30 is laminated on the semi-transmissive film 20, and the semi-transmissive portion 21 is attached to the transparent substrate 10. The semi-transmissive film 20 is formed, and the semi-transmissive portion 21 includes a first semi-transmissive portion 21A formed adjacent to the first edge of the light transmitting portion, and a first surface opposite to the first edge of the light transmitting portion. The second semi-transmissive portion 21B formed by the adjacent edges is formed such that the widths of the first and second semi-transmissive portions 21A and 21B are fixed widths which are not resolved by the exposure device, and have widths equal to each other.
即，第1及第2半透光部21A、21B係與遮光部31之邊緣鄰接，並且與透光部之邊緣鄰接。 In other words, the first and second semi-transmissive portions 21A and 21B are adjacent to the edge of the light-shielding portion 31 and are adjacent to the edge of the light-transmitting portion.
第1半透光部21A、第2半透光部21B係以遮光部31為中心而對稱、且對向地形成，且為彼此相等之寬度。此處，所謂彼此相等之寬度，較佳為第2半透光部21B之線寬相對於第1半透光部21A之線寬之不同為0.1μm以內。更佳為0.05μm以內。又，於該光罩1所具備之轉印用圖案之整體中，較佳為將半透光部21之線寬精度設為上述範圍內。藉此，賦予透光部之穿透光量之輔助作用成對稱，從而可精緻地控制形成於被轉印體上之圖案之線寬精度。 The first semi-transmissive portion 21A and the second semi-transmissive portion 21B are symmetrically formed with the light-shielding portion 31 as a center, and are formed to face each other and have the same width. Here, the width equal to each other is preferably 0.1 μm or less with respect to the line width of the second semi-transmissive portion 21B with respect to the line width of the first semi-transmissive portion 21A. More preferably, it is within 0.05 μm. Further, in the entire transfer pattern included in the mask 1, it is preferable that the line width accuracy of the semi-transmissive portion 21 is within the above range. Thereby, the auxiliary effect of imparting the amount of light transmitted through the light transmitting portion is symmetrical, so that the line width precision of the pattern formed on the object to be transferred can be finely controlled.
此處，本發明之光罩中，當透光部之寬度成為3μm以下時，因 下述理由而使本發明之穿透光量之輔助效果為顯著。其原因在於，若透光部之尺寸(寬度)變小，則繞射之影響變大，並且穿透透光部之光強度曲線之波峰下降，故而到達抗蝕劑膜而使抗蝕劑感光時，易成為光量不足。對於此種現象，本發明之光罩可消除不良情形。於透光部之寬度為2μm以下之情形時，上述穿透光量之輔助效果更大。 Here, in the reticle of the present invention, when the width of the light transmitting portion is 3 μm or less, The auxiliary effect of the amount of transmitted light of the present invention is remarkable for the following reasons. The reason is that if the size (width) of the light transmitting portion becomes small, the influence of the diffraction becomes large, and the peak of the light intensity curve penetrating the light transmitting portion is lowered, so that the resist film is reached and the resist is exposed. At the time, it is easy to become insufficient light. For this phenomenon, the photomask of the present invention can eliminate the bad situation. When the width of the light transmitting portion is 2 μm or less, the auxiliary effect of the amount of transmitted light is larger.
如下述實施例所示，將本發明之半透光部與該半透光部係遮光部之一部分之情形(為二元光罩之情形)相比較，具有使穿透透光部之光強度曲線之波峰上升之功能。因此，本發明之光罩於在被轉印體上形成未達3μm之間隙圖案時特別有利。 As shown in the following embodiments, the semi-transmissive portion of the present invention is compared with the portion of the semi-transmissive portion of the light-shielding portion (in the case of a binary mask), and has a light intensity that penetrates the light-transmitting portion. The function of the peak rise of the curve. Therefore, the photomask of the present invention is particularly advantageous when a gap pattern of less than 3 μm is formed on the object to be transferred.
又，對於如上所述之透光部具有穿透光量之輔助功能之半透光部之寬度若過大，則所形成之抗蝕劑圖案之側面形狀之倒塌易變得顯著，故而較佳為1μm以下。作為半透光部之寬度之較佳之範圍，為0.1~1μm。如本實施形態般與遮光部31之對向之邊緣鄰接而分別形成第1半透光部21A、第2半透光部21B之情形時，第1半透光部21A與上述第2半透光部21B之寬度之任一者均較佳為1μm以下(0.1~1μm)。 Further, if the width of the semi-transmissive portion having the auxiliary function of the amount of transmitted light in the light-transmitting portion as described above is too large, the collapse of the side shape of the formed resist pattern tends to become remarkable, so that it is preferably 1 μm. the following. A preferred range of the width of the semi-transmissive portion is 0.1 to 1 μm. When the first semi-transmissive portion 21A and the second semi-transmissive portion 21B are respectively formed adjacent to the opposite edges of the light-shielding portion 31, the first semi-transmissive portion 21A and the second semi-transparent portion are formed as described above. Any of the widths of the light portions 21B is preferably 1 μm or less (0.1 to 1 μm).
圖3及圖4之任一者均係將線與間隙圖案作為轉印用圖案時之例，但本發明之光罩之轉印用圖案之形狀或用途並無限制。可形成為線與間隙圖案，或亦可如圖11(c)所示應用於通孔圖案。於通孔圖案之情形時，半透光部之寬度亦可與上述同樣地設定。進而，本發明亦可用於本說明書及圖式中例示之圖案以外之轉印用圖案。 Each of FIGS. 3 and 4 is an example in which a line and a gap pattern are used as a transfer pattern. However, the shape or use of the transfer pattern of the photomask of the present invention is not limited. It may be formed as a line and gap pattern, or may be applied to the via pattern as shown in FIG. 11(c). In the case of the via pattern, the width of the semi-transmissive portion can also be set in the same manner as described above. Further, the present invention can also be applied to a transfer pattern other than the patterns exemplified in the present specification and the drawings.
又，對本發明之光罩而言，其積層構造亦具有自由度，如圖3所示，可具有於半透光膜20上積層有遮光膜30而成之遮光部31，或如圖4所示，亦可具有於遮光膜30上積層有半透光膜20而成之遮光部31。該等情況關係到以下說明之本實施形態之光罩之製造方法。 Further, in the photomask of the present invention, the laminated structure also has a degree of freedom. As shown in FIG. 3, the light-shielding portion 31 in which the light-shielding film 30 is laminated on the semi-transmissive film 20 may be provided, or as shown in FIG. The light shielding portion 31 in which the semi-transmissive film 20 is laminated on the light shielding film 30 may be provided. These cases relate to the method of manufacturing the photomask of the present embodiment described below.
再者，本發明之光罩被有利地應用於使形成於被轉印體上之轉 印像成為2灰階之用途。即，與欲取得所謂多階之抗蝕劑殘膜值之3灰階以上之多灰階光罩具有不同之功能。 Furthermore, the photomask of the present invention is advantageously applied to the rotation formed on the object to be transferred The print is used for 2 gray scales. That is, it has a different function from the multi-gray reticle of 3 gray scale or more in order to obtain a so-called multi-step resist residual film value.
其次，一面參照圖5、圖6及圖7一面對本發明之光罩之製造方法之實施形態進行說明。 Next, an embodiment of a method of manufacturing a photomask according to the present invention will be described with reference to Figs. 5, 6, and 7.
按照圖5(a)~(g)，對上述圖3所示之光罩1之製造步驟(製造方法1)進行說明。 The manufacturing steps (manufacturing method 1) of the mask 1 shown in Fig. 3 described above will be described with reference to Figs. 5(a) to 5(g).
首先，準備圖5(a)所示之光罩基底。該光罩基底係於透明基板10上依序形成有半透光膜20與遮光膜30，進而於遮光膜30上形成有正型光阻膜40者。 First, the reticle base shown in Fig. 5(a) is prepared. In the reticle substrate, the semi-transmissive film 20 and the light-shielding film 30 are sequentially formed on the transparent substrate 10, and the positive-type resist film 40 is formed on the light-shielding film 30.
然後，如圖5(a)所示，使用未圖示之繪圖機，將用以形成圖3所示之遮光部31之圖案繪圖於光阻膜40上。 Then, as shown in FIG. 5(a), a pattern for forming the light shielding portion 31 shown in FIG. 3 is drawn on the photoresist film 40 by using a plotter (not shown).
繼而，如圖5(b)所示，對光阻膜40進行顯影，形成抗蝕劑圖案41。 Then, as shown in FIG. 5(b), the photoresist film 40 is developed to form a resist pattern 41.
進而，如圖5(c)所示，將經由上述第1次顯影步驟而形成之抗蝕劑圖案41作為遮罩，對遮光膜30進行蝕刻。藉此，形成遮光部31。再者，遮光膜30之蝕刻可為乾式蝕刻亦可為濕式蝕刻。蝕刻劑可使用公知者。 Further, as shown in FIG. 5(c), the light-shielding film 30 is etched by using the resist pattern 41 formed through the first development step as a mask. Thereby, the light shielding portion 31 is formed. Furthermore, the etching of the light shielding film 30 may be dry etching or wet etching. A known one can be used as the etchant.
其次，剝離圖5(c)所示之抗蝕劑圖案41之後，如圖5(d)所示，於形成有遮光部31之半透光膜20之整個面上，再次形成光阻膜50，且藉由繪圖機而將用以形成圖3所示之半透光部21之圖案進行繪圖。 Next, after the resist pattern 41 shown in FIG. 5(c) is peeled off, as shown in FIG. 5(d), the photoresist film 50 is formed again on the entire surface of the semi-transmissive film 20 on which the light shielding portion 31 is formed. And the pattern for forming the semi-transmissive portion 21 shown in FIG. 3 is drawn by a plotter.
然後，如圖5(e)所示，對光阻膜50進行顯影而形成抗蝕劑圖案51。 Then, as shown in FIG. 5(e), the resist film 50 is developed to form a resist pattern 51.
其次，如圖5(f)所示，將經由上述第2次顯影步驟而形成之抗蝕劑圖案51作為遮罩，對半透光膜20進行蝕刻，形成半透光部21。與上 述同樣地，半透光膜20之蝕刻亦可為乾式或濕式蝕刻，且可使用公知之蝕刻劑進行。 Next, as shown in FIG. 5(f), the semi-transmissive film 20 is etched by using the resist pattern 51 formed through the second development step as a mask to form the semi-transmissive portion 21. With Similarly, the etching of the semi-transmissive film 20 may be dry or wet etching, and may be performed using a known etchant.
其後，剝離圖5(f)所示之抗蝕劑圖案51，藉此完成圖5(g)所示之構成之光罩1。 Thereafter, the resist pattern 51 shown in Fig. 5 (f) is peeled off, whereby the mask 1 of the configuration shown in Fig. 5 (g) is completed.
上述製造方法1中，亦可如下述i)~vi)般進行變更。 In the above manufacturing method 1, it may be changed as in the following i) to vi).
i)準備與上述圖5(a)中說明者相同之光罩基底，將用以形成半透光部21之圖案繪圖於光阻膜上。 i) Prepare the same mask base as that described in Fig. 5(a) above, and draw a pattern for forming the semi-transmissive portion 21 on the photoresist film.
ii)對上述i)之光阻膜進行顯影，形成抗蝕劑圖案。 Ii) Developing the photoresist film of the above i) to form a resist pattern.
iii)將上述ii)中形成之抗蝕劑圖案作為遮罩，對遮光膜進行蝕刻，繼而對半透光膜進行蝕刻。 Iii) Using the resist pattern formed in the above ii) as a mask, etching the light-shielding film, and then etching the semi-transmissive film.
iv)剝離抗蝕劑圖案，再次於整個面上形成光阻膜，且將用以形成遮光部之圖案進行繪圖。 Iv) peeling off the resist pattern, forming a photoresist film again on the entire surface, and drawing a pattern for forming the light shielding portion.
v)對上述iv)之光阻膜進行顯影，形成抗蝕劑圖案。 v) Developing the photoresist film of the above iv) to form a resist pattern.
vi)將上述v)之抗蝕劑圖案作為遮罩，對遮光膜進行蝕刻。藉此，形成特定之寬度之遮光部，完成圖5(g)所示之構成之光罩1。 Vi) The light-shielding film is etched by using the resist pattern of the above v) as a mask. Thereby, a light-shielding portion having a specific width is formed, and the mask 1 having the configuration shown in Fig. 5(g) is completed.
再者，於不失去本發明之光罩之功能之限度內，除半透光膜、遮光膜外，不排除形成其他膜之情形。例如，在半透光膜與遮光膜之蝕刻選擇性不充分之情形時，即，相對於上層膜之蝕刻劑，下層膜不具有充分之耐性之情形時，在下層膜與上層膜之間亦可設置蝕刻終止層。較佳為，遮光膜與半透光膜包含具有各自之蝕刻選擇性之膜材料為宜。 Further, insofar as the function of the reticle of the present invention is not lost, the formation of other films is not excluded except for the semi-transmissive film and the light-shielding film. For example, when the etching selectivity of the semi-transmissive film and the light-shielding film is insufficient, that is, when the underlying film does not have sufficient resistance with respect to the etchant of the upper film, the between the underlying film and the upper film is also An etch stop layer can be provided. Preferably, the light shielding film and the semi-transmissive film preferably comprise film materials having respective etching selectivities.
按照圖6(a)~(g)，對上述圖4所示之光罩2之製造步驟(製造方法2)進行說明。 The manufacturing steps (manufacturing method 2) of the mask 2 shown in Fig. 4 described above will be described with reference to Figs. 6(a) to 6(g).
首先，準備圖6(a)所示之光罩基底。該光罩基底係於透明基板10 上成膜遮光膜30、進而於遮光膜30上形成光阻膜40而成者。 First, the reticle base shown in Fig. 6(a) is prepared. The reticle base is attached to the transparent substrate 10 The upper film-forming light-shielding film 30 and the photoresist film 40 are formed on the light-shielding film 30.
然後，如圖6(a)所示，使用未圖示之繪圖機，將用以形成圖4所示之遮光部31之圖案繪圖於光阻膜40上。 Then, as shown in FIG. 6(a), a pattern for forming the light shielding portion 31 shown in FIG. 4 is drawn on the photoresist film 40 by using a plotter (not shown).
其次，如圖6(b)所示，對經過上述第1次之繪圖步驟後之光阻膜40進行顯影，形成抗蝕劑圖案41。 Next, as shown in FIG. 6(b), the photoresist film 40 after the first drawing step is developed to form a resist pattern 41.
繼而，如圖6(c)所示，將抗蝕劑圖案41作為遮罩，對遮光膜30進行蝕刻。藉此，於透明基板10上形成遮光部31。 Then, as shown in FIG. 6(c), the light-shielding film 30 is etched by using the resist pattern 41 as a mask. Thereby, the light shielding portion 31 is formed on the transparent substrate 10.
其後，剝離圖6(c)所示之抗蝕劑圖案41之後，如圖6(d)所示，於包含經由上述遮光膜之蝕刻步驟而形成之遮光部31之透明基板10之整個面上，成膜半透光膜20。 Thereafter, after the resist pattern 41 shown in FIG. 6(c) is peeled off, as shown in FIG. 6(d), the entire surface of the transparent substrate 10 including the light shielding portion 31 formed through the etching step of the light shielding film is formed. Upper, a semi-transmissive film 20 is formed.
其次，如圖6(e)所示，於半透光膜20上再次形成光阻膜50之後，將用以形成圖4所示之半透光部21之圖案繪圖於光阻膜50上。 Next, as shown in Fig. 6(e), after the photoresist film 50 is formed again on the semi-transmissive film 20, the pattern for forming the semi-transmissive portion 21 shown in Fig. 4 is drawn on the resist film 50.
然後，如圖6(f)所示，對經過上述第2次之繪圖步驟後之光阻膜50進行顯影，形成抗蝕劑圖案51。其後，將該抗蝕劑圖案51作為遮罩，對半透光膜20進行蝕刻。藉此，形成半透光部21(圖6(g))。 Then, as shown in FIG. 6(f), the photoresist film 50 after the second drawing step is developed to form a resist pattern 51. Thereafter, the resist pattern 51 is used as a mask to etch the semi-transmissive film 20. Thereby, the semi-transmissive portion 21 is formed (Fig. 6(g)).
其後，剝離圖6(f)所示之抗蝕劑圖案51，藉此完成圖6(g)所示之構成之光罩2。 Thereafter, the resist pattern 51 shown in Fig. 6(f) is peeled off, whereby the mask 2 of the configuration shown in Fig. 6(g) is completed.
於上述製造方法2之情形時，在半透光膜20與遮光膜30之間，並不特別需要蝕刻選擇性，故而具有材料選擇之自由度較廣之優點。 In the case of the above-described manufacturing method 2, since the etching selectivity is not particularly required between the semi-transmissive film 20 and the light-shielding film 30, there is an advantage that the degree of freedom in material selection is wide.
按照圖7(a)~(f)，對圖3所示之光罩1之其他製造步驟3進行說明。 The other manufacturing steps 3 of the mask 1 shown in Fig. 3 will be described with reference to Figs. 7(a) to 7(f).
首先，準備圖7(a)所示之光罩基底。此處，該光罩基底係於透明基板10上依序形成半透光膜20與遮光膜30，進而於遮光膜30上形成光阻膜60而成者。 First, the reticle base shown in Fig. 7(a) is prepared. Here, the mask base is formed by sequentially forming the semi-transmissive film 20 and the light-shielding film 30 on the transparent substrate 10, and further forming the photoresist film 60 on the light-shielding film 30.
然後，如圖7(a)所示，使用未圖示之繪圖機，將用以形成圖3所 示之半透光部21之圖案繪圖於光阻膜60上。 Then, as shown in FIG. 7(a), a plotter (not shown) will be used to form FIG. The pattern of the semi-transmissive portion 21 is shown on the photoresist film 60.
其次，如圖7(b)所示，對經過上述繪圖步驟後之光阻膜60進行顯影，形成抗蝕劑圖案61。 Next, as shown in FIG. 7(b), the photoresist film 60 subjected to the above-described drawing step is developed to form a resist pattern 61.
然後，如圖7(c)所示，將上述抗蝕劑圖案61作為遮罩，以遮光膜用蝕刻劑對遮光膜30進行蝕刻。 Then, as shown in FIG. 7(c), the resist pattern 61 is used as a mask, and the light shielding film 30 is etched by an etchant for a light shielding film.
如圖7(d)所示，繼而，以半透光膜用蝕刻劑對半透光膜20進行蝕刻。藉此，形成特定寬度之半透光部21。 As shown in FIG. 7(d), the semi-transmissive film 20 is then etched with an etchant for the semi-transmissive film. Thereby, the semi-transmissive portion 21 of a specific width is formed.
其次，如圖7(e)所示，將上述抗蝕劑圖案61作為遮罩，以遮光膜用濕式蝕刻劑對遮光膜30進行側面蝕刻。藉此，形成特定寬度之遮光部31。 Next, as shown in FIG. 7(e), the resist pattern 61 is used as a mask, and the light-shielding film 30 is side-etched with a wet etchant for the light-shielding film. Thereby, the light shielding portion 31 of a specific width is formed.
其後，剝離圖7(e)所示之抗蝕劑圖案61，藉此完成圖7(f)所示之構成之光罩1。 Thereafter, the resist pattern 61 shown in Fig. 7(e) is peeled off, whereby the mask 1 of the configuration shown in Fig. 7(f) is completed.
於上述製造方法3之情形時，半透光膜20與遮光膜30係使用彼此具有蝕刻選擇性之材料。又，於圖7(e)所示之第2次之遮光膜之蝕刻步驟中，利用等向性蝕刻之側面蝕刻，故而應用濕式蝕刻較為適當。 In the case of the above-described manufacturing method 3, the semi-transmissive film 20 and the light-shielding film 30 are made of materials having etching selectivity with each other. Further, in the etching step of the second light-shielding film shown in FIG. 7(e), the side etching by the isotropic etching is applied, so that wet etching is suitably applied.
上述製造方法1~3中，於使用製造方法3時，可獲得半透光部21之線寬精度最高，故而係理想之方法。根據該製造方法3，可將繪圖步驟設為1次，故而與必須2次繪圖之製造方法1及2相比，可避免因對準偏移而導致之圖案精度之劣化。 In the above-described manufacturing methods 1 to 3, when the manufacturing method 3 is used, the semi-transmissive portion 21 can be obtained with the highest line width accuracy, which is an ideal method. According to the manufacturing method 3, since the drawing step can be set once, the deterioration of the pattern accuracy due to the alignment deviation can be avoided as compared with the manufacturing methods 1 and 2 in which the drawing is required twice.
本發明進而包含使用有上述本發明之光罩之圖案轉印方法。即，如上所述本發明之光罩具有穿透光量之輔助效果。因此，若使用本發明之光罩將轉印用圖案轉印至被轉印體上，則不會使曝光裝置之照射光量增加(或減少)而可將微細圖案進行轉印，於節能或縮短曝光時間、提高生產效率方面帶來顯著之優點。 The present invention further includes a pattern transfer method using the photomask of the present invention described above. That is, the photomask of the present invention has an auxiliary effect of penetrating the amount of light as described above. Therefore, when the transfer pattern is transferred onto the transfer target by using the photomask of the present invention, the amount of irradiation light of the exposure device is not increased (or reduced), and the fine pattern can be transferred to save energy or shorten Significant advantages are achieved in terms of exposure time and increased productivity.
例如，本發明之光罩若應用於在被轉印體上形成線寬及/或間隙 寬度為未達3μm之線與間隙則為有用。例如，於液晶顯示裝置之透明電極圖案等平面顯示器之領域中應用於多種用途。此種線與間隙圖案之形成中，若線寬為未達3μm則難度較高，故而本發明之效果為顯著。 For example, the photomask of the present invention is applied to form a line width and/or a gap on the object to be transferred. Lines and gaps with a width of less than 3 μm are useful. For example, it is used in various fields in the field of flat display such as a transparent electrode pattern of a liquid crystal display device. In the formation of such a line and gap pattern, if the line width is less than 3 μm, the difficulty is high, and the effect of the present invention is remarkable.
又，本發明之光罩可設為具有通孔形成用之轉印用圖案者。於該情形時，作為形成有孔徑未達3μm之通孔之圖案為有用。例如，可利用於薄膜電晶體(TFT：Thin Film Transistor)之接觸通孔等。 Moreover, the photomask of the present invention can be used as a transfer pattern for forming a through hole. In this case, it is useful as a pattern in which a via hole having an aperture of less than 3 μm is formed. For example, it can be used for a contact via of a thin film transistor (TFT: Thin Film Transistor).
本發明之光罩中，作為半透光膜之材料，可列舉Cr化合物(Cr之氧化物、氮化物、碳化物、氮氧化物、氮氧碳化物等)、Si化合物(SiO2、SOG)、及金屬矽化物化合物(TaSi、MoSi、WSi或其等之氮化物、氮氧化物等)等。 In the photomask of the present invention, examples of the material of the semi-transmissive film include a Cr compound (such as an oxide of a Cr, a nitride, a carbide, an oxynitride, or a oxynitride), and a Si compound (SiO 2 or SOG). And metal telluride compounds (nitrides such as TaSi, MoSi, WSi or the like, nitrogen oxides, etc.), and the like.
作為遮光膜之材料，除Cr或Cr化合物(Cr之氧化物、氮化物、碳化物、氮氧化物、氮氧碳化物等)之外，可列舉Ta、W或其等之化合物(包含上述金屬矽化物)等。 Examples of the material of the light-shielding film include a compound of Ta, W, or the like (including the above metal) in addition to a Cr or a Cr compound (an oxide, a nitride, a carbide, an oxynitride, a oxynitride, or the like). Telluride) and so on.
在遮光膜與半透光膜之間需要蝕刻選擇性之情形時，對遮光膜使用Cr或Cr化合物，且對半透光膜使用Si化合物或金屬矽化物化合物即可。或者，相反，亦可對半透光膜使用Cr化合物，且對遮光膜使用金屬矽化物化合物。 When etching selectivity is required between the light shielding film and the semi-transmissive film, a Cr or Cr compound is used for the light shielding film, and a Si compound or a metal halide compound is used for the semi-transmissive film. Alternatively, conversely, a Cr compound may be used for the semi-transparent film, and a metal telluride compound may be used for the light-shielding film.
以下，參照圖8~圖10，對將轉印用圖案設為線與間隙圖案之光罩之比較例1、參考例1、及實施例1進行說明。 Hereinafter, a comparative example 1, a reference example 1, and a first embodiment in which a transfer pattern is a mask of a line and a gap pattern will be described with reference to FIGS. 8 to 10 .
圖8係表示將使遮光膜(OD為3以上)圖案化而形成之線與間隙圖案作為轉印圖案之光罩(二元光罩)之比較例1。此處，圖8(a)表示用於本比較例1之轉印用圖案。圖8(b)表示對該轉印用圖案進行曝光時，照射至形成於被轉印體上之抗蝕劑膜上之穿透光之光強度分佈。圖 8(c)表示藉由本模擬而獲得之各評估項目值。圖8(d)表示藉由比較例1之二元光罩而形成之抗蝕劑圖案形狀。 8 is a comparative example 1 showing a mask (binary mask) in which a line and a gap pattern formed by patterning a light-shielding film (OD is 3 or more) as a transfer pattern. Here, FIG. 8(a) shows a transfer pattern used in Comparative Example 1. Fig. 8(b) shows a light intensity distribution of the transmitted light irradiated onto the resist film formed on the transfer target when the transfer pattern is exposed. Figure 8(c) shows the values of the evaluation items obtained by the simulation. Fig. 8(d) shows the shape of a resist pattern formed by the binary mask of Comparative Example 1.
圖8(a)中，比較例1之二元光罩係將於未圖示之透明基板上包含透光部與遮光部31之線與間隙圖案作為轉印用圖案之光罩。於比較例1中，將線與間隙圖案之間距寬度P設定為7μm(線寬ML=3.5μm，間隙寬度MS=3.5μm)。 In Fig. 8(a), the binary mask of Comparative Example 1 includes a mask having a line and a gap pattern of the light transmitting portion and the light shielding portion 31 as a transfer pattern on a transparent substrate (not shown). In Comparative Example 1, the width P between the line and the gap pattern was set to 7 μm (line width ML = 3.5 μm, gap width MS = 3.5 μm).
此處應用之模擬光學條件中，曝光裝置之數值孔徑NA為0.085，相干因素σ為0.9，照射光源之強度為包含i線、h線、g線之寬光，且將強度比設為g線：h線：i線=1：0.8：0.95。作為抗蝕劑使用酚醛系之正型，且將初始膜厚設為1.5μm。 In the simulated optical conditions applied here, the numerical aperture NA of the exposure apparatus is 0.085, the coherence factor σ is 0.9, and the intensity of the illumination source is broad light including the i-line, the h-line, and the g-line, and the intensity ratio is set to the g-line. :h line: i line = 1:0.8:0.95. A phenolic positive type was used as the resist, and the initial film thickness was set to 1.5 μm.
又，作為評估項目之對比度(Contrast)，於圖8(b)中，將極大值設為Imax，且將極小值設為Imin時， Contrast=(Imax-Imin)/(Imax+Imin)。 Further, as the contrast (Contrast) of the evaluation item, in FIG. 8(b), when the maximum value is Imax and the minimum value is Imin, Contrast = (Imax - Imin) / (Imax + Imin).
再者，該等於以下描述之穿透輔助光罩1(參考例1、圖9)、及穿透輔助光罩2(實施例1、圖10)中，亦共通地應用。 Further, the penetration auxiliary mask 1 (reference example 1, FIG. 9) and the penetration auxiliary mask 2 (embodiment 1, FIG. 10) which are described below are also commonly used.
此處，將於被轉印體上用以形成線寬為2.9μm(間距寬度P為7μm)之線與間隙圖案而必要之照射光量設為照射光量Eop，以比較例1(二元光罩)中之照射光量為基準，評估參考例1、實施例1。又，關於抗蝕劑膜損耗之項目，係指相對於形成於被轉印體上之抗蝕劑膜厚(初始膜厚為1.5μm)之減膜量，與上述同樣以比較例1為基準，評估參考例1、實施例1。 Here, a line and gap pattern having a line width of 2.9 μm (pitch width P of 7 μm) is formed on the transfer target, and the amount of irradiation light necessary is set as the irradiation light amount Eop, and Comparative Example 1 (binary mask) Reference Example 1 and Example 1 were evaluated based on the amount of illumination light in the test. In addition, the term "resist film loss" refers to the film thickness of the resist film formed on the transfer target (the initial film thickness is 1.5 μm), and is based on Comparative Example 1 as described above. , Reference Example 1, Example 1 was evaluated.
首先，藉由圖8(b)、(c)及(d)而說明比較例1(二元光罩)之模擬結果。將穿透比較例1之二元光罩之轉印用圖案之穿透光照射至形成於被轉印體上之抗蝕劑膜上，於該抗蝕劑膜上形成如圖8(b)所示之光強度分佈。藉由此種光強度分佈而形成之抗蝕劑圖案之形狀成為如圖8(d)所示。 First, the simulation results of Comparative Example 1 (binary mask) will be described with reference to Figs. 8(b), (c) and (d). The light that penetrates the transfer pattern of the binary mask of Comparative Example 1 is irradiated onto the resist film formed on the transfer target, and is formed on the resist film as shown in FIG. 8(b). The light intensity distribution shown. The shape of the resist pattern formed by such a light intensity distribution is as shown in Fig. 8(d).
又，如圖8(c)所示，比較例1之光強度分佈之波峰強度(Peak Intensity)為0.82，對比度為0.92。 Further, as shown in FIG. 8(c), the peak intensity (Peak Intensity) of the light intensity distribution of Comparative Example 1 was 0.82, and the contrast was 0.92.
圖9係表示將使半透光膜圖案化而形成之線與間隙圖案作為轉印用圖案之光罩之參考例1(穿透輔助光罩1)者。與上述比較例1同樣地，圖9(a)表示轉印用圖案，圖9(b)表示照射至形成於被轉印體上之抗蝕劑膜上之穿透光之光強度分佈，圖9(c)表示本模擬之各評估項目值。圖9(d)表示藉由參考例1之穿透輔助光罩1而形成之抗蝕劑圖案形狀。 Fig. 9 is a view showing a reference example 1 (penetrating the auxiliary mask 1) in which a line and a gap pattern formed by patterning a semi-transmissive film are used as a mask for a transfer pattern. In the same manner as in the above Comparative Example 1, FIG. 9(a) shows a transfer pattern, and FIG. 9(b) shows a light intensity distribution of the transmitted light irradiated onto the resist film formed on the transfer target. 9(c) indicates the value of each evaluation item of this simulation. Fig. 9(d) shows the shape of a resist pattern formed by penetrating the auxiliary mask 1 of Reference Example 1.
圖9(a)中，參考例1之穿透輔助光罩1係將於未圖示之透明基板上包含透光部與半透光部21之線與間隙圖案作為轉印用圖案之光罩。形成有參考例1之半透光部21之半透光膜相對於代表波長i線之曝光光穿透率為8%，相位偏移量成為45°。參考例1之線與間隙圖案之間距寬度P與上述比較例1為相同。參考例1之模擬光學條件亦與上述比較例1為相同。 In Fig. 9(a), the penetration assisting mask 1 of Reference Example 1 includes a line mask having a light transmitting portion and a semi-light transmitting portion 21 as a pattern for a transfer pattern on a transparent substrate (not shown). . The semi-transmissive film in which the semi-transmissive portion 21 of Reference Example 1 was formed had an exposure light transmittance of 8% with respect to the representative wavelength i line, and the phase shift amount was 45°. The line width P between the line and the gap pattern of Reference Example 1 is the same as that of Comparative Example 1 described above. The simulated optical conditions of Reference Example 1 were also the same as those of Comparative Example 1 described above.
將參考例1之模擬結果示於圖9(b)、(c)及(d)中。將穿透參考例1之穿透輔助光罩1之轉印用圖案之穿透光照射至形成於被轉印體上之抗蝕劑膜上，於該抗蝕劑膜上形成如圖9(b)所示之光強度分佈。藉由此種光強度分佈而形成之抗蝕劑圖案之形狀成為如圖9(d)所示。 The simulation results of Reference Example 1 are shown in Figures 9(b), (c) and (d). The penetrating light penetrating the transfer pattern of the reference auxiliary reticle 1 of Reference Example 1 is irradiated onto the resist film formed on the object to be transferred, and the resist film is formed as shown in FIG. 9 ( b) The light intensity distribution shown. The shape of the resist pattern formed by such a light intensity distribution is as shown in Fig. 9(d).
如圖9(c)所示，參考例1之穿透輔助光罩1中，與上述比較例1相比，可將照射光量(DOSE量Eop)減少約25%。即，可將曝光裝置之掃描曝光之時間縮短25%。 As shown in FIG. 9(c), in the penetration assisting photomask 1 of Reference Example 1, the amount of irradiation light (DOSE amount Eop) can be reduced by about 25% as compared with Comparative Example 1 described above. That is, the time for scanning exposure of the exposure device can be shortened by 25%.
其另一方面，於被轉印體接受之曝光光之光強度分佈中，對比度為0.74，與上述比較例1相比而變小少許。隨此，所形成之抗蝕劑圖案之形狀(參照圖9(d))中，其側面之傾斜角(相對於水平面以90°作為最大時之傾斜角)與上述比較例1相比而變小。此意味著於被轉印體 之加工製程中，源於步驟變動之線寬之變動會變大。 On the other hand, in the light intensity distribution of the exposure light received by the transfer target, the contrast ratio was 0.74, which was smaller than that of Comparative Example 1. With this, in the shape of the formed resist pattern (refer to Fig. 9 (d)), the inclination angle of the side surface (the inclination angle at which 90° is the maximum with respect to the horizontal plane) is changed as compared with the above Comparative Example 1. small. This means that the object to be transferred In the processing process, the variation in the line width resulting from the step change becomes larger.
圖10係表示具有本發明之轉印用圖案之光罩之實施例1(穿透輔助光罩2)。與上述比較例1同樣地，圖10(a)表示轉印用圖案，圖10(b)表示照射至形成於被轉印體上之抗蝕劑膜上之穿透光之光強度分佈，圖10(c)表示本模擬之各評估項目。圖10(d)表示藉由實施例1之穿透輔助光罩2而形成之抗蝕劑圖案形狀。 Fig. 10 is a view showing a first embodiment (penetrating auxiliary mask 2) of a photomask having a transfer pattern of the present invention. In the same manner as in the above Comparative Example 1, FIG. 10(a) shows a transfer pattern, and FIG. 10(b) shows a light intensity distribution of the transmitted light irradiated onto the resist film formed on the transfer target. 10(c) represents the evaluation items of this simulation. Fig. 10 (d) shows the shape of a resist pattern formed by penetrating the auxiliary mask 2 of the first embodiment.
圖10(a)中，實施例1之穿透輔助光罩2係具有上述本發明之線與間隙圖案作為轉印用圖案之光罩。該穿透輔助光罩2設為如下構成：與上述比較例1相同之間距寬度P，但其線圖案係與遮光部31之兩側邊緣鄰接而設置有第1及第2半透光部21A、21B(基於穿透率為20%、相位差為45°之半透光膜)。穿透輔助光罩2之線圖案成為如下構成：與1.5μm之遮光部31之兩側邊緣鄰接，且分別設置有1.0μm之第1及第2半透光部21A、21B。此種實施例1之模擬光學條件與上述比較例1為相同。 In Fig. 10(a), the penetration auxiliary mask 2 of the first embodiment has the above-described line and gap pattern of the present invention as a mask for the transfer pattern. The penetration auxiliary mask 2 has a configuration in which the width P is the same as that of the first comparative example, but the line pattern is provided adjacent to both side edges of the light shielding portion 31 to provide the first and second semi-transmissive portions 21A. 21B (a semi-transmissive film based on a transmittance of 20% and a phase difference of 45°). The line pattern penetrating the auxiliary mask 2 is configured to be adjacent to both side edges of the light-shielding portion 31 of 1.5 μm, and to provide first and second semi-transmissive portions 21A and 21B of 1.0 μm, respectively. The simulated optical conditions of this Example 1 were the same as those of Comparative Example 1 described above.
將實施例1之模擬結果示於圖10(b)、(c)及(d)。將穿透實施例1之穿透輔助光罩2之轉印用圖案之穿透光照射至形成於被轉印體上之抗蝕劑膜上，於該抗蝕劑膜上形成如圖10(b)所示之光強度分佈。藉由此種光強度分佈而形成之抗蝕劑圖案之形狀成為如圖10(d)所示。 The simulation results of Example 1 are shown in Figures 10(b), (c) and (d). The penetrating light penetrating the transfer pattern of the penetration auxiliary mask 2 of Example 1 is irradiated onto the resist film formed on the object to be transferred, and the resist film is formed as shown in FIG. 10 ( b) The light intensity distribution shown. The shape of the resist pattern formed by such a light intensity distribution is as shown in Fig. 10(d).
如圖10(c)所示，於實施例1之穿透輔助光罩2中，與上述參考例1同樣地，可將用於形成抗蝕劑圖案所必要之照射光量(DOSE量Eop)與上述比較例1相比削減約26%。進而，於實施例1之穿透輔助光罩2中，與上述比較例1相比，幾乎未見光強度分佈之對比度之降低。 As shown in FIG. 10(c), in the penetration auxiliary mask 2 of the first embodiment, the amount of irradiation light (DOSE amount Eop) necessary for forming a resist pattern can be obtained in the same manner as in the above-described Reference Example 1. The above Comparative Example 1 was reduced by about 26%. Further, in the penetration auxiliary mask 2 of the first embodiment, the contrast of the light intensity distribution was hardly decreased as compared with the above-described comparative example 1.
此處，如圖10(d)所示，對實施例1之穿透輔助光罩2而言，與上述參考例1相比，抗蝕劑圖案側面之傾斜角變得更大而有提高。抗蝕劑圖案之側面之傾斜角得以改善會大大有助於將該抗蝕劑圖案作為遮 罩而進行之被轉印體之蝕刻步驟之穩定性。其原因在於，由於蝕刻時間或蝕刻速度之不均，使得藉由蝕刻而形成之圖案線寬之不均變小。 Here, as shown in FIG. 10(d), in the penetration auxiliary mask 2 of the first embodiment, the inclination angle of the side surface of the resist pattern is larger and improved as compared with the above-described Reference Example 1. The improvement of the tilt angle of the side of the resist pattern greatly contributes to the use of the resist pattern as a mask The stability of the etching step of the transferred body by the cover. This is because the unevenness of the pattern line width formed by etching becomes small due to the uneven etching time or etching speed.
又，與實施例1之光罩相同設計之具有轉印用圖案之光罩，不存在穿透輔助圖案，與上述比較例1之二元光罩相比，於實施例1中，呈現約26%之照射光量之削減效果。藉由此種照射光量之削減效果，本發明之光罩與將其半透光膜之穿透輔助圖案部分替換為遮光膜而與遮光部形成為一體之情形時之光罩(先前之二元光罩)相比較，可形成以少10%以上之照射光量進行曝光之光罩。更佳為，可形成以少20%以上之照射光量進行曝光之光罩。 Further, in the photomask having the transfer pattern similar to that of the photomask of the first embodiment, there is no penetration assist pattern, and compared with the binary mask of the first comparative example, in the first embodiment, about 26 is present. The effect of reducing the amount of illumination light by %. With the effect of reducing the amount of illumination light, the photomask of the present invention and the transmissive auxiliary pattern portion of the semi-transmissive film are replaced with a light-shielding film and integrated with the light-shielding portion (previously binary) In comparison with the photomask, a photomask which is exposed with less than 10% of the amount of illumination light can be formed. More preferably, a photomask which is exposed with less than 20% of the amount of illumination light can be formed.
根據上述實施例1之模擬結果，本發明之光罩之作用效果可以如下方式進行說明。即，本發明之光罩於遮光部之邊緣附近，設置有具有用以輔助透光部之穿透光量之功能之穿透輔助圖案。藉由該構成，於如圖10(b)所示之穿透光罩之穿透光之光強度曲線上，可使相對於透光部之中心之曲線之波峰位置之穿透量成為充分高之值，而且，可抑制與遮光部之中心對應之曲線之波谷位置上升。因此，光強度曲線之傾斜變大，作為結果，可加大如圖10(d)所示之形成於被轉印體上之抗蝕劑圖案之側面形狀之傾斜角(相對於光罩面，更接近垂直)。此種抗蝕劑圖案形狀之優化當然可作為圖案分佈之提高而認識。 According to the simulation result of the above-described first embodiment, the effect of the reticle of the present invention can be explained as follows. That is, the reticle of the present invention is provided with a penetration assisting pattern having a function of assisting the amount of light transmitted through the light transmitting portion in the vicinity of the edge of the light shielding portion. With this configuration, the penetration amount of the peak position of the curve with respect to the center of the light transmitting portion can be sufficiently high on the light intensity curve of the transmitted light penetrating through the reticle as shown in FIG. 10(b). In addition, it is possible to suppress the rise of the valley position of the curve corresponding to the center of the light shielding portion. Therefore, the inclination of the light intensity curve becomes large, and as a result, the inclination angle of the side shape of the resist pattern formed on the transfer target as shown in FIG. 10(d) can be increased (relative to the mask surface, Closer to vertical). The optimization of the shape of such a resist pattern can of course be recognized as an improvement in pattern distribution.
以下，一面參照圖11及圖12，一面對將轉印用圖案設為通孔圖案之光罩之比較例2、參考例2、及實施例2所實施之模擬進行說明。 Hereinafter, a simulation performed in Comparative Example 2, Reference Example 2, and Example 2 in which the transfer pattern is a through-hole pattern mask will be described with reference to FIGS. 11 and 12.
首先，一面參照圖11(a)~(c)一面對比較例2、參考例2、實施例2之各光罩之構成進行說明。圖11(a)~(c)係分別表示將轉印用圖案設為通孔圖案之光罩之比較例2(二元光罩)、參考例2(穿透輔助光罩3)、及實施例2(穿透輔助光罩4)之光罩影像。 First, the configuration of each of the photomasks of Comparative Example 2, Reference Example 2, and Example 2 will be described with reference to Figs. 11(a) to 11(c). 11(a) to 11(c) show a comparative example 2 (binary mask) and a reference example 2 (penetrating auxiliary mask 3) in which a transfer pattern is used as a mask for a via pattern, and Example 2 (through the auxiliary mask 4) reticle image.
圖11(a)中，比較例2之光罩為二元光罩(圖中之符號3)，其係於未圖示之透明基板上形成有包含遮光膜(OD為3以上)之遮光部31，且於該遮光部31之中央形成有作為透光部之正方形之通孔H。 In Fig. 11(a), the photomask of Comparative Example 2 is a binary mask (symbol 3 in the figure), and a light-shielding portion including a light-shielding film (OD of 3 or more) is formed on a transparent substrate (not shown). 31. A through hole H which is a square of the light transmitting portion is formed in the center of the light shielding portion 31.
圖11(b)中，參考例2之光罩係穿透輔助光罩3(圖中之符號4)，其係與上述比較例2為相同設計之轉印用圖案，且將上述比較例2之遮光部31替換為包含半透光膜之半透光部21。該半透光膜相對於代表波長i線之曝光光穿透率成為7%，相位偏移量成為45°。 In Fig. 11(b), the mask of Reference Example 2 penetrates the auxiliary mask 3 (reference numeral 4 in the drawing), which is a transfer pattern of the same design as that of Comparative Example 2 described above, and Comparative Example 2 described above is used. The light shielding portion 31 is replaced with a semi-light transmitting portion 21 including a semi-transmissive film. The transmittance of the semi-transmissive film with respect to the representative wavelength i line was 7%, and the phase shift amount was 45°.
圖11(c)中，本發明之實施例2之光罩係於遮光膜圖案之中央，具有固定寬度之半透光膜圖案，且具有藉由該半透光膜圖案而包圍透光部之通孔圖案。即，本發明之實施例2之光罩係穿透輔助光罩4(圖中之符號5)，其係於藉由連續之遮光部31而包圍之區域中，與該遮光部31之邊緣鄰接而形成有固定寬度之半透光部21。關於實施例2之半透光部21之曝光光穿透率，將於以下描述。 In FIG. 11(c), the photomask of the second embodiment of the present invention is in the center of the light shielding film pattern, has a semi-transmissive film pattern of a fixed width, and has a light transmissive portion surrounded by the semi-transmissive film pattern. Through hole pattern. That is, the reticle of the second embodiment of the present invention penetrates the auxiliary reticle 4 (symbol 5 in the figure) which is adjacent to the edge of the opaque portion 31 in a region surrounded by the continuous opaque portion 31. Further, a semi-transmissive portion 21 having a fixed width is formed. The exposure light transmittance of the semi-transmissive portion 21 of Embodiment 2 will be described below.
準備3種樣品，其係以上述之比較例2、參考例2、實施例2之各光罩之構成，將通孔H之尺寸設為邊長為4.0μm、2.5μm、2.0μm之正方形而製作。又，本發明之實施例2中，將3種樣品之半透光部21之寬度之任一者均設為0.5μm。 Three kinds of samples were prepared, and the sizes of the through holes H were set to squares having side lengths of 4.0 μm, 2.5 μm, and 2.0 μm in the configurations of the photomasks of Comparative Example 2, Reference Example 2, and Example 2 described above. Production. Further, in the second embodiment of the present invention, any one of the widths of the semi-transmissive portions 21 of the three kinds of samples was set to 0.5 μm.
進而，於實施例2中，對於通孔H之尺寸為邊長為4.0μm及2.5μm之樣品，將其半透光部21中使用之半透光膜相對於代表波長i線之曝光光穿透率設為30%，對於通孔H之尺寸為邊長為2.0μm之樣品，將其半透光膜相對於代表波長i線之曝光光穿透率設為35%。於該條件時，如下述圖12所示，使參考例2與實施例2之照射光量Eop大致一致。 Further, in the second embodiment, for the sample having the via hole H having a side length of 4.0 μm and 2.5 μm, the semi-transmissive film used in the semi-transmissive portion 21 is exposed to the exposure light of the representative wavelength i line. The transmittance was set to 30%, and for the sample having the via hole H having a side length of 2.0 μm, the transmittance of the semi-transmissive film with respect to the representative wavelength i line was set to 35%. In this condition, as shown in FIG. 12 below, the irradiation light amount Eop of Reference Example 2 and Example 2 was substantially matched.
再者，參考例2、實施例2中使用之半透光膜之相位偏移量相對於代表波長i線為45°。 Further, the phase shift amount of the semi-transmissive film used in Reference Example 2 and Example 2 was 45° with respect to the representative wavelength i line.
再者，於表示本光學模擬結果之圖12之圖表中，對於比較例2、 參考例2、實施例2各自之評估表示3個繪圖，該3個繪圖係分別對應於上述3種樣品者。 Furthermore, in the graph of Fig. 12 showing the results of the optical simulation, for Comparative Example 2 The evaluation of each of Reference Example 2 and Example 2 indicates three plots, which correspond to the above three types of samples, respectively.
將比較例2、參考例2、實施例2之具有通孔圖案之光罩分別進行藉由曝光裝置而曝光時之光學模擬。光學模擬條件中，將曝光裝置之數值孔徑NA設為0.085，將相干因素σ設為0.9，關於照射光源之強度，該照射光源係包含i線、h線、g線之寬光，且將其強度比設為g線：h線：i線=1：1：1。本光學模擬中，對圖11(d)所示之評估項目A~C進行評估。以下，對評估項目A~C進行說明。 The optical masks of the comparative example 2, the reference example 2, and the embodiment 2 having the through-hole pattern were respectively subjected to optical simulation by exposure by an exposure device. In the optical simulation condition, the numerical aperture NA of the exposure apparatus is set to 0.085, and the coherence factor σ is set to 0.9. Regarding the intensity of the illumination source, the illumination source includes wide light of i-line, h-line, and g-line, and The intensity ratio is set to g line: h line: i line = 1:1:1. In this optical simulation, evaluation items A to C shown in Fig. 11 (d) were evaluated. The evaluation items A to C will be described below.
圖11(d)之說明圖係表示藉由具有通孔圖案之光罩而形成之抗蝕劑圖案之剖面形狀。圖中塗黑之部分係成為蝕刻遮罩之抗蝕劑圖案，其間中空之部分係與通孔H對應之抗蝕劑圖案上之抽取圖案。 11(d) is a cross-sectional view showing a resist pattern formed by a photomask having a via pattern. The blackened portion in the figure is a resist pattern for etching the mask, and the hollow portion therebetween is an extraction pattern on the resist pattern corresponding to the via hole H.
再者，此處，將照射光量(DOSE量(Eop))作為為了使光罩之通孔H之透光部寬度(CD)、與藉由穿透通孔H之曝光光而形成之抗蝕劑圖案上之抽取圖案寬度相等而必要之照射光量來評估。 Here, the amount of irradiation light (DOSE amount (Eop)) is used as a resist for forming a light-transmitting portion width (CD) of the through hole H of the photomask and exposure light by penetrating the through hole H. The extraction pattern width on the agent pattern is equal and the amount of illumination necessary is evaluated.
照射光量Eop之數值越小，則生產效率越高，或者越節能。 The smaller the value of the amount of irradiation light Eop, the higher the production efficiency or the more energy saving.
本光學模擬中之抗蝕劑傾斜角係圖11(d)之說明圖中所示之塗黑之抗蝕劑圖案之與通孔部分(抽取圖案)之交界部之傾斜角。關於該抗蝕劑傾斜角，於水平地載置被轉印體時，將相對於被轉印體之面而為垂直之情形時之傾斜角(90°)作為最大而表現。抗蝕劑傾斜角越大越佳。抗蝕劑傾斜角越大，則可越小地抑制將該抗蝕劑圖案用作蝕刻遮罩之情形時之孔徑或寬度之變動。 The tilt angle of the resist in this optical simulation is shown by the angle of inclination of the interface portion of the blackened resist pattern and the via portion (extraction pattern) shown in Fig. 11(d). When the object to be transferred is horizontally placed on the resist tilt angle, the tilt angle (90°) when it is perpendicular to the surface of the transfer target is maximized. The larger the resist tilt angle, the better. The larger the resist tilt angle, the smaller the variation in the aperture or width when the resist pattern is used as an etch mask can be suppressed.
表示抗蝕劑膜相對於初始膜厚(1.5μm)之減膜量。圖11(d)之說明 圖中所示之塗黑之抗蝕劑圖案之抗蝕劑膜損耗越小越佳。抗蝕劑膜損耗於乾式蝕刻中可變得特別深刻。 The amount of film reduction of the resist film with respect to the initial film thickness (1.5 μm) is shown. Illustration of Figure 11(d) The smaller the resist film loss of the blackened resist pattern shown in the drawing, the better. Resist film loss can be particularly acute in dry etching.
對於比較例2、參考例2、實施例2之各光罩，將上述評估項目A~C之模擬結果示於圖12。圖12(a)表示照射光量，圖12(b)表示抗蝕劑傾斜角，圖12(c)表示抗蝕劑膜損耗。 The simulation results of the evaluation items A to C are shown in Fig. 12 for each of the photomasks of Comparative Example 2, Reference Example 2, and Example 2. Fig. 12 (a) shows the amount of irradiation light, Fig. 12 (b) shows the resist tilt angle, and Fig. 12 (c) shows the resist film loss.
如圖12(a)所示，照射光量於比較例2中為最大，於參考例2及實施例2中為同等程度。與上述實施例1之模擬結果同樣地，本發明之光罩於採用通孔圖案之形態之情形時，與比較例2之二元光罩相比認為照射光量之削減效果顯著。 As shown in Fig. 12 (a), the amount of irradiation light was the largest in Comparative Example 2, and was equivalent in Reference Example 2 and Example 2. As in the simulation results of the above-described first embodiment, when the photomask of the present invention is in the form of a through-hole pattern, the effect of reducing the amount of irradiation light is considered to be remarkable as compared with the binary mask of Comparative Example 2.
如圖12(b)所示，抗蝕劑傾斜角於比較例2之二元光罩中為最大，但實施例2之抗蝕劑傾斜角與該二元光罩相比幾乎未劣化。 As shown in Fig. 12 (b), the resist tilt angle was the largest in the binary mask of Comparative Example 2, but the resist tilt angle of Example 2 was hardly deteriorated compared with the binary mask.
如圖12(c)所示，實施例2與比較例2之二元光罩同等，幾乎未產生抗蝕劑膜損耗(使實施例2之值與比較例2之值大致疊合而繪圖)。 As shown in Fig. 12(c), in the second embodiment, as in the binary mask of Comparative Example 2, the resist film loss was hardly generated (the value of Example 2 was substantially superimposed on the value of Comparative Example 2 and plotted) .
將以上之評估項目A~C作為綜合評估，本發明之光罩可節減曝光所必要之照射光量，而且可形成形狀優異之抗蝕劑圖案作為蝕刻遮罩。其原因在於，與遮光部之邊緣鄰接而形成之半透光部發揮輔助透光部之穿透光量之功能，取得曝光裝置之照射光量之削減效果。於先前難以圖案化之微細圖案中可實現此種抗蝕劑圖案之意義較大。 By using the above evaluation items A to C as a comprehensive evaluation, the photomask of the present invention can reduce the amount of irradiation light necessary for exposure, and can form a resist pattern having an excellent shape as an etching mask. This is because the semi-transmissive portion formed adjacent to the edge of the light-shielding portion functions as a light-transmitting amount of the auxiliary light-transmitting portion, and the effect of reducing the amount of irradiation light of the exposure device is obtained. It is of great significance to realize such a resist pattern in a fine pattern which was previously difficult to pattern.
再者，於具有用以形成接觸通孔之通孔圖案之光罩中，不僅存在確實地形成微細之通孔之要求，而且存在將通孔剖面之傾斜角控制為所需值之要求。例如，假定於層間絕緣膜中形成配線形狀之槽、且埋入金屬時，若考慮埋入之難易度，則考慮於槽中欲精度較高地形成特定之傾斜角(例如20°~60°)之情形等。於此種情形時，於本發明之實施例2之光罩中，藉由選擇半透光部之尺寸或穿透率而控制成為蝕刻遮罩之抗蝕劑圖案之傾斜角為有用，又，亦可將形成為特定之形狀 之抗蝕劑圖案維持原樣地作為最終製品之一部分。 Further, in the photomask having the via pattern for forming the contact via, there is not only a requirement for reliably forming the fine via, but also a requirement for controlling the tilt angle of the via cross section to a desired value. For example, when a wiring having a wiring shape is formed in the interlayer insulating film and a metal is buried, considering the ease of embedding, a specific tilt angle (for example, 20 to 60°) is preferably considered in the groove to be highly precise. The situation, etc. In this case, in the reticle of the second embodiment of the present invention, it is useful to control the tilt angle of the resist pattern to be an etch mask by selecting the size or transmittance of the semi-transmissive portion. Can also be formed into a specific shape The resist pattern remains as part of the final article as it is.
以上，參照複數之實施形態及實施例說明了本發明，但本發明並不限定於上述實施形態及實施例。對於本發明之構成或詳情，於請求項中記載之本發明之精神或範圍內可進行本領域技術人員能理解之各種變更。 The present invention has been described above with reference to the embodiments and examples, but the present invention is not limited to the embodiments and examples. Various changes that can be understood by those skilled in the art can be made within the spirit or scope of the invention as set forth in the claims.
1‧‧‧光罩 1‧‧‧Photomask
10‧‧‧透明基板 10‧‧‧Transparent substrate
20‧‧‧半透光膜 20‧‧‧ Semi-transparent film
21‧‧‧半透光部 21‧‧‧ semi-transmission department
21A‧‧‧第1半透光部 21A‧‧‧1st semi-transmission department
21B‧‧‧第2半透光部 21B‧‧‧2nd semi-transmission department
30‧‧‧遮光膜 30‧‧‧Shade film
31‧‧‧遮光部 31‧‧‧Lighting Department
L‧‧‧線 L‧‧‧ line
S‧‧‧間隙 S‧‧‧ gap
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20130123330A (en) | 2013-11-12 |
| TW201351028A (en) | 2013-12-16 |
| KR101364286B1 (en) | 2014-02-18 |
| JP2013235036A (en) | 2013-11-21 |
| JP6081716B2 (en) | 2017-02-15 |
| CN103383522A (en) | 2013-11-06 |
| CN103383522B (en) | 2016-09-21 |
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