TWI549432B - 高電壓電源控制系統 - Google Patents
高電壓電源控制系統 Download PDFInfo
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- TWI549432B TWI549432B TW103125181A TW103125181A TWI549432B TW I549432 B TWI549432 B TW I549432B TW 103125181 A TW103125181 A TW 103125181A TW 103125181 A TW103125181 A TW 103125181A TW I549432 B TWI549432 B TW I549432B
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- 238000000034 method Methods 0.000 claims description 30
- 230000005669 field effect Effects 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 description 9
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910001922 gold oxide Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Power Sources (AREA)
- Control Of Voltage And Current In General (AREA)
- Direct Current Feeding And Distribution (AREA)
Description
本發明係有關於一種高電壓電源控制系統,尤指與邏輯製程相容之高電壓電源控制系統。
用以控制高壓電源的微處理器單元常被使用在許多不同的應用之中,如數位電源管理(digital power management)或觸控面板控制...等。由於微處理器單元原係設計以控制邏輯訊號,因此微處理器單元的輸出及輸入訊號之電壓大多係介於1.2伏特至1.5伏特之間。也因此微處理器單元可能需要高電壓元件以支援介於5伏特至18伏特的高電位輸出及輸入訊號。由於微處理器單元及高電壓元件對操作電壓的需求並不相同,因此不易以相同製程來製造微處理器單元及高電壓元件。亦即,微處理器單元係以邏輯製程來製造,而高電壓元件則是以高電壓製程來製造。
高電壓製程可用來製造支援低、中及高電壓的元件。第1圖說明利用高電壓製程製造的電晶體T1至T6。電晶體T1及T2為低電壓元件,其可支援1.2伏特、1.5伏特或1.8伏特的電壓。電晶體T3及T4為中電壓元件,其可支援3.3伏特或5伏特的電壓。電晶體T5及T6為高電壓元件,其可支援大於10伏特的電壓。如第1圖所示,為能承受高電壓的指令操作,電晶體T5及T6的閘極氧化層厚度會比電晶體T1至T4的閘極氧化層厚度還大。舉例而言,電晶體T5及T6的閘極氧化層厚度可為250Å,電晶體T3及T4的閘極氧化層厚度可為70Å或130Å,而電晶體T1及T2的閘極氧化層厚度可小於50Å。此外,電晶體T5中N型深井區HVNW的參雜濃度會小於電晶體
T1及T3中N井區NW1及NW2的參雜濃度。電晶體T6中P型深井區HPNW的參雜濃度會小於電晶體T2及T4中P井區PW1及PW2的參雜濃度。再者,相較於邏輯製程,高電壓製程需要更多的光罩及程序。因此額外的高電壓製程不僅會增加製造成本,同時也使得整合更加困難。
本發明之一實施例提供一種高電壓電源控制系統。高電壓電源控制系統包含微處理器單元、嵌入式非揮發性記憶體及高電壓驅動器。微處理器單元用以控制高電壓電源控制系統之複數個高電壓輸出,並至少包含複數個低電壓元件。嵌入式非揮發性記憶體電性耦接於微處理器單元,並包含複數個低電壓元件、複數個中電壓元件及複數個橫向擴散金氧半場效電晶體。高電壓驅動器電性耦接於微處理器單元,用以輸出高電壓電源控制系統之複數個高電壓輸出,並至少包含複數個中電壓元件及複數個橫向擴散金氧半場效電晶體。高電壓電源控制系統可相容於邏輯製程。
本發明另一實施例所提供之高電壓電源控制系統另包含可調式高電壓加壓電路。可調式高電壓加壓電路用以供應電源至高電壓驅動器,並至少包含複數個中電壓元件及複數個橫向擴散金氧半場效電晶體。
T1、T2、T3、T4、T5、T6‧‧‧電晶體
P+‧‧‧P型參雜區
N+‧‧‧N型參雜區
NW1‧‧‧第一N井區
NW2‧‧‧第二N井區
PW1‧‧‧第一P井區
PW2‧‧‧第二P井區
HVNW‧‧‧N型深井區
HVPW‧‧‧P型深井區
100、300‧‧‧高電壓電源控制系統
110‧‧‧微處理器單元
112‧‧‧控制訊號
120‧‧‧嵌入式非揮發性記憶體
130‧‧‧高電壓驅動器
132‧‧‧高電壓輸出
200‧‧‧橫向擴散電晶體架構
210‧‧‧P型基底
212‧‧‧N型深井區
214‧‧‧第一N井區
216‧‧‧第一P井區
218‧‧‧第二P井區
220‧‧‧第二N井區
222‧‧‧第一P型參雜區
224‧‧‧第二P型參雜區
226‧‧‧第三P型參雜區
228‧‧‧第一閘極構造
230‧‧‧第一淺溝渠隔絕層
232‧‧‧第四N型參雜區
234‧‧‧第五N型參雜區
236‧‧‧第六N型參雜區
238‧‧‧第二閘極構造
240‧‧‧第二淺溝渠隔絕層
340‧‧‧可調式高電壓加壓電路
第1圖為先前技術利用高電壓製程製造之電晶體的示意圖。
第2圖為本發明一實施例之高電壓電源控制系統的示意圖。
第3圖為本發明一實施例之橫向擴散金氧半場效電晶體架構的示意圖。
第4圖為本發明另一實施例之高電壓電源控制系統的示意圖。
第2圖為本發明一實施例之高電壓電源控制系統100的示意圖。高電壓電源控制系統100包含微處理器單元110、嵌入式非揮發性記憶體120及高電壓驅動器130。微處理器單元110可用以控制高電壓電源控制系統100
的複數個高電壓輸出132。嵌入式非揮發性記憶體120及高電壓驅動器130皆電性耦接於微處理器單元110。在一實施例中,微處理器單元110可監控系統環境並根據預先決定的演算法程式、參數設定、身分辨識資訊或安全資訊以輸出適當的控制訊號112。而微處理器單元110所需的複數個程式碼、複數個參數設定、複數個身分辨識指令操作或複數個安全資訊指令操作及可儲存在嵌入式非揮發性記憶體120之中。一旦微處理器單元110完成計算,微處理器單元110即可輸出控制訊號112。高電壓驅動器130接收控制訊號112並將控制訊號112的電位提升至較高的電位以輸出高電壓電源控制系統100的複數個高電壓輸出132。
由於微處理器單元110係設計來操作低電壓的邏輯訊號指令,因此微處理器單元110至少包含複數個低電壓元件,而每一個低電壓元件可支援1.2伏特、1.5伏特或1.8伏特之低電壓指令操作。在本發明之另一實施例中,微處理器110亦可能需要支援中電壓的指令操作如3伏特至4伏特或5伏特至6伏特指令操作。於此情形下,微處理器單元110則可另包含可支援中電壓指令操作的中電壓元件。由於此處所述之邏輯製程係指可支援一般系統內的低至中電壓軌,亦即1.2伏特、1.5伏特、1.8伏特、3.3伏特、5伏特及電壓範圍在6伏特以內的電壓軌,因此微處理器單元110可與邏輯製程相容。相反地,可用以支援較高電壓如8伏特、10伏特或更高電壓的元件,則通常需要高電壓製程。相較於邏輯製程,高電壓製程中較厚的閘極氧化層及較稀薄的汲極和源極參雜濃度可使元件得以承受高電壓的指令操作。由於嵌入式非揮發性記憶體120也可能需要支援高電壓的指令操作,嵌入式非揮發性記憶體120可包含複數個低電壓元件、中電壓元件以及可支援高電壓指令操作的元件。同樣地,高電壓驅動器130也可包含中複數個中電壓元件以及可支援高電壓指令操作的元件。美國專利號8,373,485即揭露了可操作於高電壓模式及低電壓模式的電壓轉換裝置(level shifting apparatus)。因此,根據美國專利號8,373,485所教導的類似作法,嵌入式非揮發性記憶體120即可利用
與微處理器單元110相同的邏輯製程來製作,而嵌入式非揮發性記憶體120仍可承受高電壓的指令操作。
第3圖為本發明之一實施例之橫向擴散電晶體架構200的示意圖。橫向擴散電晶體架構200雖可以邏輯製程製造,但仍可承受高電壓。橫向擴散電晶體架構200包含P型基底210、N型深井區212、位於N型深井區212內的第一N井區214、位於N型深井區212內並與第一N井區214相鄰的第一P井區216、位於P型基底210內的第二P井區218及位於P型基底210內並與第二P井區218相鄰的第二N井區220。橫向擴散電晶體架構200還包含位於第一N井區214內的第一P型參雜區222、位於第一N井區214及第一P井區216之間的第二P型參雜區224、位於第一P井區216內的第三P型參雜區226、位於第一P型參雜區222及第二P型參雜區224之間的第一閘極架構228以及位於第二P型參雜區224及第三P型參雜區226之間且位於第一P井區216內的淺溝渠隔絕層230。因此,可支援中電壓指令操作的P型金氧半電晶體以及由第三P型參雜區226及第二P井區216所形成之第一特製汲極即可組成橫向擴散P型金氧半場效電晶體。雖然一般而言,支援中電壓指令操作的P型金氧半場效電晶體之崩潰電壓可能為3伏特至4伏特或5伏特至6伏特,然而藉由第一特製汲極的幫助,橫向擴散P型金氧半場效電晶體即可承受高電壓的指令操作。由於第一P井區216的參雜濃度小於第一至第三P型參雜區222、224及226,因此當有施予高電壓源於第三P型參雜區226時,第三P型參雜區226及第一P井區216在等效上可視為分壓電阻。因此,藉著利用第一特製汲極,橫向擴散P型金氧半場效電晶體所受到之高電壓即可由等效的分壓電阻所分擔,並使橫向擴散P型金氧半場效電晶體可用以支援高電壓的指令操作。
此外,橫向擴散電晶體架構200還包含位於第二P井區218內的第四N型參雜區232、位於第二P井區218及第二N井區220之間的第五N型參雜區234、位於第二N井區220內的第六N型參雜區236、位於第四N型參雜區232及第五N型參雜區234之間的第二閘極架構238以及位於第五N型參雜區234及第
六N型參雜區236之間且位於第二N井區220內的淺溝渠隔絕層240。因此,可支援中電壓指令操作的N型金氧半電晶體以及由第六N型參雜區236及第二N井區220所形成之第二特製汲極即可組成橫向擴散N型金氧半場效電晶體。雖然一般而言,支援中電壓指令操作的N型金氧半場效電晶體之崩潰電壓可能為3伏特至4伏特或5伏特至6伏特,然而藉由第二特製汲極的幫助,橫向擴散N型金氧半場效電晶體即可承受高電壓的指令操作。由於第二N井區220的參雜濃度小於第四至第六N型參雜區232、234及236,因此當有施予高電壓源於第六N型參雜區236時,第六N型參雜區236及第二N井區220在等效上可視為一分壓電阻。因此,藉著利用第二特製汲極,橫向擴散N型金氧半場效電晶體所受到之高電壓即可由等效的分壓電阻所分擔,並使橫向擴散N型金氧半場效電晶體可用以支援高電壓的指令操作。
在本發明之一實施例中,橫向擴散電晶體架構200可由常見的3至4伏特之邏輯製程製作,而仍可接受3伏特至12伏特的高電壓指令操作。在此情形下,第一閘極構造228或第二閘極構造238的閘極氧化層厚度可在60Å至80Å的範圍內,而比起在高電壓製程下,可能厚達250Å的閘極氧化層要小了很多。在本發明之另一實施例中,橫向擴散電晶體架構200可由常見的5至6伏特之邏輯製程製作,而仍可接受8伏特至18伏特的高電壓指令操作。在此情形下,第一閘極構造228或第二閘極構造238的閘極氧化層厚度可在120Å至140Å的範圍內,而仍比高電壓製程可能使用的閘極氧化層要小了很多。此外,前述之橫向擴散電晶體架構僅為提供本發明較佳之實施例,而並非用以限定本發明。
藉著使用前述的橫向擴散電晶體架構,嵌入式非揮發性記憶體120和高電壓驅動器130即皆可在與邏輯製程相容的情況下,仍能支援高電壓的指令操作。因此,高電壓電源控制系統100中的所有元件即皆可相容於相同的邏輯製程,而能夠省去使用高電壓製程時所需的額外製作及整合成本。
第4圖為本發明另一實施例之高電壓電源控制系統300的示意圖。
高電壓電源控制系統300與高電壓電源控制系統100具有相似的結構,然而高電壓電源控制系統300另包含可調式高電壓加壓電路340。可調式高電壓加壓電路340可用以供應電源至高電壓驅動器130。在本發明之另一實施例中,可調式高電壓加壓電路340亦可根據系統的需要用以供應電源至嵌入式非揮發性記憶體120。由於供應電源可能包含複數個高電壓軌,因此前述的橫向擴散電晶體架構亦可使用於可調式高電壓加壓電路340內,使可調式高電壓加壓電路340亦可利用相同的邏輯製程來製作。然而可調式高電壓加壓電路340並非必要,例如當系統中已有高電壓源時,則可調式高電壓加壓電路340即可由高電壓源直接取代。
綜上所述,根據上述本發明之實施例,本發明之高電壓電源控制系統即可利用相同的邏輯製程來設計和製作,而無須額外的成本及光罩。此外,由於高電壓電源控制系統中的每一個元件皆可與邏輯製程相容,因此整合性及良率亦皆可獲得提升。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。
100‧‧‧高電壓電源控制系統
110‧‧‧微處理器單元
112‧‧‧控制訊號
120‧‧‧嵌入式非揮發性記憶體
130‧‧‧高電壓驅動器
132‧‧‧高電壓輸出
Claims (9)
- 一種高電壓電源控制系統,包含:一微處理器單元,用以控制該高電壓電源控制系統之複數個高電壓輸出,並至少包含複數個低電壓元件;一嵌入式非揮發性記憶體,電性耦接於該微處理器單元,包含複數個低電壓元件、複數個中電壓元件及複數個橫向擴散金氧半場效電晶體;一高電壓驅動器,電性耦接於該微處理器單元,用以輸出該高電壓電源控制系統之該些高電壓輸出,並至少包含複數個中電壓元件及複數個橫向擴散金氧半場效電晶體;及一高電壓源,用以供應電源至該高電壓驅動器及該嵌入式非揮發性記憶體。
- 如請求項1所述之高電壓電源控制系統,其中每一橫向擴散金氧半場效電晶體的一閘極厚度小於由一高電壓製程所製造之一電晶體的一閘極厚度。
- 如請求項1所述之高電壓電源控制系統,其中該嵌入式非揮發性記憶體係用以儲存該微處理器單元之複數個程式碼、複數個參數設定、複數個身分辨識指令操作或複數個安全資訊指令操作。
- 如請求項1所述之高電壓電源控制系統,其中每一中電壓元件支援電壓為3V至4V之指令操作。
- 如請求項4所述之高電壓電源控制系統,其中每一低電壓元件支援電壓為1.2V至1.8V之指令操作。
- 如請求項4所述之高電壓電源控制系統,其中每一橫向擴散金氧半場效電晶體支援電壓為3V至12V之指令操作。
- 如請求項1所述之高電壓電源控制系統,其中每一中電壓元件支援電壓為5V至6V之指令操作。
- 如請求項7所述之高電壓電源控制系統,其中每一低電壓元件支援電壓為1.5V至1.8V之指令操作。
- 如請求項7所述之高電壓電源控制系統,其中每一橫向擴散金氧半場效電晶體支援電壓為8V至18V之指令操作。
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- 2014-07-24 EP EP14178268.0A patent/EP2840609A3/en not_active Withdrawn
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US20150048875A1 (en) | 2015-02-19 |
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JP2015038972A (ja) | 2015-02-26 |
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