TWI545667B - Connecting wire for semiconductor device and method for manufacturing the same - Google Patents
Connecting wire for semiconductor device and method for manufacturing the same Download PDFInfo
- Publication number
- TWI545667B TWI545667B TW104110540A TW104110540A TWI545667B TW I545667 B TWI545667 B TW I545667B TW 104110540 A TW104110540 A TW 104110540A TW 104110540 A TW104110540 A TW 104110540A TW I545667 B TWI545667 B TW I545667B
- Authority
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- Taiwan
- Prior art keywords
- wire
- heat treatment
- less
- bonding
- ratio
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 77
- 238000005491 wire drawing Methods 0.000 claims description 51
- 239000013078 crystal Substances 0.000 claims description 43
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims 1
- 238000011156 evaluation Methods 0.000 description 22
- 229910001316 Ag alloy Inorganic materials 0.000 description 18
- 230000007547 defect Effects 0.000 description 18
- 239000010949 copper Substances 0.000 description 16
- 229910052709 silver Inorganic materials 0.000 description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 14
- 239000010931 gold Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 238000005259 measurement Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 238000010265 fast atom bombardment Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 239000011162 core material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910002710 Au-Pd Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910002696 Ag-Au Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
- B21C1/003—Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Description
本發明係關於一種半導體裝置用接合導線,尤其是關於一種含有Ag或Ag合金之半導體裝置用接合導線及其製造方法。
半導體裝置係藉由如下方式形成:於電路配線基板(引線框架、基板、膠帶等)載置半導體元件,利用半導體裝置用接合導線(以下亦簡稱為「接合導線」)將半導體元件上之電極與電路配線基板上之電極之間連接。
作為半導體裝置用接合導線,使用線徑為20~50μm左右之細金屬線。接合導線之一端係於使用超音波併用熱壓接方式將導線之前端加熱熔融而形成球之後,將該球部壓接接合至半導體元件之電極上。導線之另一端係藉由超音波壓接而接合至電路配線基板之電極上。
作為接合導線用素材,先前一直使用高純度Au(金)或Au合金。然而,由於Au價格高,故而期望材料費用較低之其他種類之金屬。作為代替Au之低成本之導線素材,研究有Cu(銅)。與Au相比,Cu易被氧化,因此於專利文獻1中,揭示有如下之例:作為芯材與被覆層(外周部)之2層接合導線,於芯材使用Cu,於被覆層使用Pd(鈀)。又,於專利文獻2中,揭示有如下一種接合導線,該接合導線具有:芯材,其含有Cu或Cu合金;被覆層,其於該芯材之表面以Pd為主成分;及合金層,其於該被覆層之表面含有Au及Pd。
Cu導線或者Pd被覆Cu導線因接合後之硬度較高,故而要求硬度
更低之材料。作為具有與Au同等以上之導電性、硬度低於Cu之元素且進而具有耐氧化性之元素,可列舉Ag(銀)。
於專利文獻3中,揭示有一種以Ag為主體之Ag-Au-Pd三元合金系接合導線。該接合導線係於連續模拉線前被進行退火熱處理,於連續模拉線後被進行調質熱處理,且於氮氣氛圍中進行球形接合。藉此,即便於高溫、高濕及高壓下之嚴酷之使用環境下使用,亦可維持與鋁墊之連接可靠性。
於專利文獻4中,揭示有一種以Ag為主體之Ag-Au、Ag-Pd、Ag-Au-Pd合金線材。合金線材之中心部包含細長之晶粒或等軸晶粒,合金線材之其他部分包含等軸晶粒,包含退火雙晶之晶粒為總量之20%以上。其目的在於,提高封裝體製品之品質及可靠性。
正在推進鄰接之接合導線之間隔變窄之窄間距化。作為與此對應之對接合導線之要求,要求細線化、高強度化、迴路控制、接合性之提高等。迴路形狀因半導體安裝之高密度化而複雜化。作為迴路形狀之分類,迴路高度、接合之導線長度(跨距)成為指標。於最新之半導體中,在一個封裝體內部混載高迴路與低迴路、短跨距與長跨距等相反之迴路形成之情況增多。為了利用1種接合導線實現該情況,需要嚴格之接合導線之材料設計。
期望作為於量產中使用之導線特性,滿足接合步驟中之迴路控制穩定、接合性亦提高、於樹脂密封步驟中抑制導線變形、連接部之長期可靠性等綜合特性,藉此可應對最前端之窄間距連接、積層晶片連接等高密度安裝。
[專利文獻1]再公表WO2002-23618公報
[專利文獻2]日本專利特開2011-77254號公報
[專利文獻3]日本專利第4771562號公報
[專利文獻4]日本專利特開2013-139635號公報
因多接腳、窄間距化而進行於一個IC(integrated circuit,積體電路)內混載導線長度、迴路高度不同之導線連接。若進行窄間距化,則存在產生球直立部之偏斜(leaning)不良之情況。所謂偏斜不良係球形接合附近之導線直立部傾斜而鄰接導線之間隔接近之現象。尋求一種改善偏斜不良之導線材料。
又,於積層晶片連接中,有時彈性不良成為問題。於積層晶片之導線連接中,較多地使用接合位置與通常之導線接合反轉之被稱為反接合之連接。所謂反接合係如下方法:於第一階段中在晶片上之電極形成柱形凸塊,於第二階段中在基板之電極上接合球部,且將接合導線楔形接合至上述柱形凸塊上。藉由該反接合,可將迴路高度抑制得較低,並且於晶片積層數增加而階差相當高之情形時,亦可實現穩定之迴路控制。另一方面,於該反接合中,存在產生接合導線彎曲之彈性不良之情況。於記憶體IC中,積層晶片正成為主流,而期待減少該彈性不良。
Ag含量為90質量%以上之Ag或Ag合金(於本說明書中,稱為「Ag或Ag合金」)之接合導線(於本說明書中,存在稱為「導線」之情形)由於硬度較低,故而不易引起晶片損傷。因此,多被用於反接合。另一方面,如上所述,於反接合中易引起彈性不良。又,因Ag或Ag合金導線之硬度較低而導致易產生偏斜不良。
於Ag或Ag合金導線中,雖存在改善偏斜不良與彈性不良中之任一者之方法,但難以同時改善偏斜不良與彈性不良。本發明之目的在於提供一種偏斜不良與彈性不良均得到改善之含有Ag或Ag合金之半
導體裝置用接合導線及其製造方法。
即,本發明之主旨如下。
(1)一種半導體裝置用接合導線,其特徵在於:其係Ag含量為90質量%以上者,且於包含導線中心且平行於導線長度方向之剖面(以下稱為「導線中心剖面」)中,不存在長徑a與短徑b之比a/b為10以上且面積為15μm2以上之晶粒(以下稱為「纖維狀組織」),
測定上述導線中心剖面之導線長度方向之結晶方位,結果相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率以面積率計為10%以上且未達50%,
測定導線表面之導線長度方向之結晶方位,結果相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率以面積率計為70%以上。
(2)如上述(1)之半導體裝置用接合導線,其特徵在於:上述半導體裝置用接合導線含有Pd、Cu、Au、Zn、Pt、Ge、Sn、Ti、Ni中之1種以上,於含有Pd、Cu、Au、Zn之情形時,其等之合計為0.01~8質量%,於含有Pt、Ge、Sn、Ti、Ni之情形時,其等之合計為0.001~1質量%,剩餘部分為Ag及雜質。
(3)如上述(1)或(2)之半導體裝置用接合導線,其特徵在於:上述雜質中所包含之S為1質量ppm以下,Cl為0.5質量ppm以下。
(4)一種半導體裝置用接合導線之製造方法,該半導體裝置用接合導線係如上述(1)至(3)中任一項者,上述半導體裝置用接合導線之製造方法之特徵在於有:具有進行1次以上之拉線加工之拉線步驟,於拉線步驟中,具有至少1次縮面率為15.5~30.5%之拉線加工,於拉線步驟之中途進行1次以上之熱處理,於拉線步驟結束後進行最終熱處理,即將進行上述最終熱處理前之熱處理之溫度為300℃以上且未
達600℃,且上述最終熱處理之溫度為600℃以上且800℃以下。
本發明係對於Ag或Ag合金接合導線,設為於導線中心剖面不存在纖維狀組織,剖面<100>方位比率為10%以上且未達50%,表面<100>方位比率為70%以上,藉此,可同時改善偏斜不良與彈性不良。於拉線步驟中,進行至少1次縮面率為15.5~30.5%之拉線加工,於拉線步驟結束後進行熱處理(最終熱處理),並且於拉線步驟之中途進行1次以上之熱處理,將即將進行最終熱處理前之熱處理(最終前熱處理)溫度設為300℃以上且未達600℃,將最終熱處理溫度設為600℃以上且800℃以下,藉此可形成上述結晶組織。
若以觀察面之形狀區分於Ag或Ag合金接合導線中可看到之結晶組織,則可分為將相鄰之結晶方位之角度差為15度以上之情形定義為晶界時之、晶粒之長徑a與短徑b之比(a/b)接近於1之形狀之結晶、及a/b之值較大之細長形狀之結晶。a/b接近於1之結晶亦被稱為等軸晶。此處,將a/b為10以上且觀察面中之晶粒之面積為15μm2以上之晶粒定義為「纖維狀組織」。
對於Ag或Ag合金接合導線,若於包含導線中心(導線中心軸)且平行於導線長度方向(導線軸方向)之剖面(於本說明書中,稱為導線中心剖面,即,為包含導線中心軸之導線剖面)進行觀察,則於導線中心軸附近觀察到上述所定義之纖維狀組織之情況較多。於專利文獻4中被稱為細長之晶粒18之結晶相當於纖維狀組織(參照該文獻之圖1B)。除纖維狀組織以外之部分為a/b接近於1之晶粒。
可對顯現於觀察面之各結晶組織計測<100>方位。選擇上述導
線中心剖面作為觀察面,測定上述導線中心剖面之導線長度方向之結晶方位,結果以面積率表示相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率,命名為「剖面<100>方位比率」。又,選擇導線表面作為觀察面,測定上述導線表面之導線長度方向之結晶方位,結果以面積率表示相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率,命名為「表面<100>方位比率」。
於本發明中,對於Ag或Ag合金接合導線,於在導線中心剖面不存在纖維狀組織,剖面<100>方位比率為10%以上且未達50%,且表面<100>方位比率為70%以上時,可抑制偏斜不良與彈性不良。又,若將剖面<100>方位比率設為10%以上且同時不存在纖維狀組織,則可抑制彈性不良。又,若將剖面<100>方位比率設為未達50%,則可提高彈性不良之抑制效果。進而,藉由將表面<100>方位比率設為70%以上,可抑制偏斜不良。
於在導線中心剖面存在纖維狀組織之情形時,根據導線之長度方向而形成存在纖維狀組織之部分與不存在纖維狀組織之部分,根據各者之部位不同而2nd接合(楔形接合)部之破斷強度不同,故而存在2nd接合不穩定而產生彈性不良之情況。然而,本發明係藉由不存在纖維狀組織,而能夠抑制彈性不良產生。又,若剖面<100>方位比率過低,則2nd接合部之破斷強度會變高,而產生彈性不良,但藉由將剖面<100>方位比率設為10%以上,可抑制彈性不良產生。又,若剖面<100>方位比率過高,則2nd接合部之破斷強度會變高,故而彈性不良之產生稍微增加,但藉由將剖面<100>方位比率設為未達50%,可良好地抑制彈性不良產生。進而,若表面<100>方位比率過低,則球頸部變得易於向橫向變形,故而變得易產生偏斜不良,但藉由將表面<100>方位比率設為70%以上,可抑制偏斜不良產生。
接合導線係藉由拉線加工而製造。拉線加工係使線材通過孔模1次以上而使素材之剖面面積變小之加工。準備線徑為數mm之素材,反覆進行冷拉線加工,藉此依序使線徑變細,而形成作為目標之線徑之接合導線。通常,將每一行程(每通過1次孔模)之縮面率設為1~15%。有時於拉線步驟之中途、或者拉線步驟結束後進行熱處理。
若使用Ag或Ag合金素材進行通常之拉線加工,則會於導線之中心形成纖維狀組織。又,因拉線加工中之冷變形而導致導線表面之結晶方位受影響,從而表面<100>方位比率變高。
可藉由拉線加工後之熱處理使導線中心之纖維狀組織消失。然而,若欲藉由熱處理使纖維狀組織消失,則需要超過800℃之高溫熱處理,進行熱處理之結果為,構成導線之結晶之結晶方位無規化,表面<100>方位比率下降,難以實現表面<100>方位比率為70%以上。
於本發明中,對拉線加工之縮面率施以研究,並且限定在拉線中途及拉線步驟結束後進行之熱處理之方式,藉此可實現不存在纖維狀組織,同時剖面<100>方位比率為10%以上且未達50%,表面<100>方位比率設為70%以上。而且,藉此可同時抑制偏斜不良與彈性不良。
即,具有對Ag或Ag合金素材進行1次以上之拉線加工之拉線步驟,於拉線步驟中,進行至少1次縮面率為15.5~30.5%之拉線加工。進而,於拉線步驟之中途進行1次以上之熱處理,於拉線步驟結束後,亦進行熱處理(最終熱處理)。將即將進行最終熱處理前之熱處理(最終前熱處理)溫度設為300℃以上且未達600℃,將最終熱處理溫度設為600℃以上且800℃以下,藉此可製成於導線中心剖面不存在纖維狀組織、且表面<100>方位比率與剖面<100>方位比率為上述本發明之較佳之範圍的Ag或Ag合金接合導線。藉由進行至少1次縮面率為
15.5~30.5%之拉線加工,可實現纖維狀組織較通常少之結晶組織,藉由其後之熱處理而纖維狀組織變得易於消失。將最終熱處理溫度設為600℃以上之原因在於藉此可將剖面<100>方位比率設為本發明之上限以下,將最終熱處理溫度設為800℃以下之原因在於藉此可將表面<100>方位比率設為本發明之下限以上。將最終前熱處理溫度設為300℃以上係為了去除加工應變,將最終前熱處理溫度設為未達600℃係為了於該階段使再結晶不過度進行。
對於進行縮面率為15.5~30.5%之拉線加工之時期並無特別限定,既可於最終前熱處理之前進行,亦可於最終前熱處理之後進行。較佳為設為於即將進行最終前熱處理前進行、或於剛進行過最終前熱處理後立即進行。
對於進行最終前熱處理之後之拉線加工,該拉線加工期間之總縮面率、行程次數均無限定。較佳為將總縮面率設為95%以下。若如此,則可藉由最終熱處理相對較容易地獲得所期望之結晶組織。
對於在最終前熱處理之前進行之拉線加工,該拉線加工期間之總縮面率、行程次數亦均無限定。又,是否於最終前熱處理之前進行熱處理亦無限定。對於進行熱處理之情形時之熱處理溫度等亦無特別限定。
本發明之接合導線係藉由使用Ag含量為90質量%以上之Ag或Ag合金作為素材而能夠充分地發揮效果。若Ag含量少於90質量%,則比電阻會變得過高,而不適合用作接合導線。作為除Ag以外之組成,可含有與Ag製成固溶體且於拉線步驟中不易斷線之成分、例如Pd、Cu、Au、Zn、Pt、Ge、Sn、Ti、Ni。
又,本發明之接合導線含有以下之選擇成分,且剩餘部分設為含有Ag及雜質之Ag合金,藉此,可發揮優異之效果。
作為評估接合導線之長期可靠性之方法,除了最多地利用之加
熱試驗即乾燥氛圍中之高溫保管評估以外,作為通常之高濕加熱評估而進行PCT試驗(壓力鍋試驗)。最近,作為高濕加熱評估,要求於進一步嚴格之HAST試驗(High Accelerated Temperature and humidity Stress Test,高加速溫度和濕度應力試驗)(溫度為130℃,相對濕度為85%RH(Relative Humidity),5V)中不會產生不良。於本發明中,作為導線之成分組成,含有總計為0.01質量%以上之Pd、Cu、Au、Zn中之至少1種以上,藉此可於HAST試驗中獲得良好之高濕加熱評估結果。另一方面,若Pd、Cu、Au、Zn之含量總計超過8質量%,則導線本身之強度會提昇,故而2nd接合部之破斷強度亦提昇而變得易於產生彈性不良,故而將含量合計設為8質量%以下。
於本發明中,進而,作為導線之成分組成,含有總計為0.001質量%以上之Pt、Ge、Sn、Ti、Ni中之至少1種以上,藉此具有使1st接合之球形狀良好之效果。另一方面,若Pt、Ge、Sn、Ti、Ni之含量總計超過1質量%,則導線本身之強度會提昇,故而2nd接合部之破斷強度亦提昇而變得易於產生彈性不良,故而較佳為將含量合計設為1質量%以下。
於本發明中,進而,將於導線中作為雜質而包含之S含量設為1質量ppm以下,且將作為雜質而包含之Cl含量設為0.5質量ppm以下,藉此可使1st接合之FAB(Free Air Ball,無空氣焊球)形狀良好。
本發明之接合導線之製造方法如上所述。即,使用含有上述本發明之成分之Ag或Ag合金素材進行拉線加工,於拉線步驟中進行至少1次縮面率為15.5~30.5%之拉線加工,於拉線步驟結束後進行熱處理(最終熱處理),並且於拉線步驟之中途進行1次以上之熱處理,將最終前熱處理(即將進行最終熱處理前之熱處理)溫度設為300℃以上且未達600℃,將最終熱處理溫度設為600℃以上且800℃以下。藉此,可製成於導線中心剖面不存在纖維狀組織且剖面<100>方位比
率為10%以上且未達50%、表面<100>方位比率為70%以上之Ag或Ag合金接合導線。
作為接合導線之原材料,對作為主成分之Ag使用純度為99.99質量%以上之高純度之素材,對作為添加元素之Pd、Cu、Au、Zn、Pt、Ge、Sn、Ti、Ni之原材料使用純度為99.9質量%以上之素材。對於含有作為雜質元素之S、Cl之位準係有意圖地含有S、Cl。
於製成含有特定成分之Ag或Ag合金後,藉由連續鑄造而製成數mm之線徑之素材,繼而,進行藉由冷模引伸之拉線加工及熱處理。關於拉線加工之縮面率,於本發明例之全部及比較例之一部分中賦予於中途之1~10行程中將縮面率設為15.5~30.5%之步驟,於除此以外之行程中將縮面率設為5.5%~15.0%。將縮面率設為15.5%以上之行程係設為剛進行過最終前熱處理之後。將拉線加工結束後之最終線徑設為15~25μm。
作為拉線前後之熱處理,進行於拉線步驟結束後進行之最終熱處理、於拉線步驟中途進行之熱處理中之於即將進行最終熱處理前進行之最終前熱處理。於最終前熱處理中,本發明例與比較例均係將最終前熱處理溫度設為300℃以上且未達600℃。關於最終熱處理,本發明例與比較例之一部分係將最終熱處理溫度設為600℃以上且800℃以下。將自最終前熱處理至拉線結束為止之合計縮面率設為80~90%。
接合導線中之含有成分(除雜質以外)之濃度係藉由ICP(Inductively Coupled Plasma,感應耦合電漿)分析、ICP質譜分析等而測定。接合導線中之雜質濃度係藉由GDMS(Glow Discharge Mass Spectrometry,輝光放電質譜)分析而測定。所謂GDMS分析係如下方法:於Ar氛圍下,將試樣作為陰極而產生輝光放電,於電漿內對試樣
表面進行濺鍍,利用質譜分析計測定經離子化之構成元素。
將包含導線中心且平行於導線長度方向之剖面(導線中心剖面)及導線表面作為觀察面,進行結晶組織之評估。作為評估方法,使用背向散射電子繞射法(EBSD,Electron Backscattered Diffraction)。EBSD法具有對觀察面之結晶方位進行觀察,並可圖示相鄰之測定點間之結晶方位之角度差的特徵,即便為如接合導線般之細線,亦可相對簡便且精度良好地觀察結晶方位。
於將如導線表面之曲面作為對象而實施EBSD法之情形時,必須加以注意。當測定曲率較大之部位時,難以實現精度較高之測定。然而,將供測定之接合導線於平面上固定於直線上,測定該接合導線之中心附近之平坦部,藉此可進行精度較高之測定。具體而言,較佳為設為如下測定區域。圓周方向之尺寸係以導線長度方向之中心為軸而設為線徑之50%以下,導線長度方向之尺寸係設為100μm以下。較佳為,只要將圓周方向之尺寸設為線徑之40%以下,且將導線長度方向之尺寸設為40μm以下,則可藉由縮短測定時間而提高測定效率。為了進一步提高精度,較理想為測定3個部位以上,獲得考慮了偏差之平均資訊。測定位置較佳為以不接近之方式相隔1mm以上。
剖面<100>方位比率及表面<100>方位比率係將藉由專用軟體(例如,TSL Solutions公司製造之OIM analysis等)而特定出之全結晶方位作為母集團,對導線長度方向之結晶方位進行測定,結果算出相對於導線長度方向角度差為15°以下之結晶方位<100>之存在比率(面積率)。對於纖維狀組織,藉由專用軟體(例如,TSL Solutions公司製造之OIM analysis等)算出長徑a、短徑b之比a/b及晶粒之面積,按照定義對纖維狀組織之有無進行評估。
於評估用引線框架,以迴路長度5mm、迴路高度0.5mm接合100根。作為評估方法,自晶片水平方向觀察導線直立部,以通過球形接合部之中心之垂線與導線直立部之間隔最大時之間隔(偏斜間隔)進行評估。於偏斜間隔小於導線直徑之情形時,判斷為偏斜良好,於偏斜間隔大於導線直徑之情形時,直立部傾斜,故而判斷為偏斜不良。利用光學顯微鏡觀察接合有100根之導線,並對偏斜不良之根數進行計數。將不良為0根設為◎,將不良為1~5根設為○,將不良為6根以上設為×。
於評估用Si晶片,以迴路長度2.5mm、迴路高度0.15mm接合100根。為了評估彈性特性,而進行將接合導線楔形接合至形成於電極上之柱形凸塊上之連接方法即反接合,並觀察接合導線彎曲之彈性不良。作為評估方法,利用光學顯微鏡觀察接合有100根之導線,並對彈性不良之根數進行計數。將不良為0根設為◎,將不良為1~3根設為○,將不良為4~5根設為△,將不良為6根以上設為×。
作為高濕加熱評估,進行HAST試驗。對於藉由焊線機進行接合後之半導體裝置,放置於溫度130℃、濕度85%RH、5V之環境下,每隔48小時取出一次進行評估。作為評估方法,測定電阻,並將電阻上升者設為NG(No Good,不良)。將變為NG為止之時間為480小時以上設為◎,將384小時以上且未達480小時者設為○,將288小時以上且未達384小時者設為△,將未達288小時者設為×。
對1st接合之FAB形狀進行評估。於評估用引線框架,利用焊線機製作100個FAB。作為評估方法,利用SEM(scanning electron microscope,掃描式電子顯微鏡)(電子顯微鏡)觀察100個FAB,將真球
狀者設為OK,將偏芯、收縮設為NG,並對其數量進行計數。將NG為0個設為◎,將NG為1~5個設為○,將NG為6~10個設為△,將NG為11個以上設為×。
對1st接合之球形狀進行評估。於評估用Si晶片,利用焊線機接合100根。作為評估方法,利用光學顯微鏡觀察100個壓接球部,將接近於真圓者設為OK,將呈花瓣狀者設為NG,並對其數量進行計數。將NG為0個設為◎,將NG為1~5個設為○,將NG為6~10個設為△,將NG為11個以上設為×。
於上述任一評估中,◎、○、△均為合格,僅×為不合格。
將結果示於表1。對脫離本發明範圍之數值、項目標註下底線。
本發明例1~43含有本發明範圍之成分,於拉線步驟中,進行1次縮面率為15.5~30.5%之拉線加工,將最終前熱處理溫度設為300℃以上且未達600℃,將最終熱處理溫度設為600℃以上且800℃以下。其結果,可設為不存在纖維狀組織,同時剖面<100>方位比率為10%以上且未達50%,表面<100>方位比率為70%以上。
作為導線之成分組成而含有總計為0.01質量%以上之Pd、Cu、Au、Zn中之至少1種以上之本發明例係HAST試驗結果為○或◎,可獲得特別良好之結果。作為導線之成分組成而含有總計為0.001質量%以上之Pt、Ge、Sn、Ti、Ni中之至少1種以上之本發明例係壓接球形狀為○或◎,可獲得特別良好之結果。作為導線中之雜質而S含量:1質量ppm以下、Cl含量:0.5質量ppm以下之本發明例係FAB形狀為○或◎,可獲得良好之結果。
比較例44係於拉線步驟中無縮面率為15.5%以上之步驟,即便進行熱處理,亦於導線中殘留纖維狀組織,彈性評估不良。比較例45、51由於最終熱處理溫度較低,故而剖面<100>方位比率超出上限,
表面<100>方位比率超過90%,因此彈性評估不良。關於比較例45,由於熱處理溫度過低,故而無法使纖維狀組織完全消失,該情況亦成為彈性評估不良之一個原因。比較例48由於最終熱處理溫度較低且於拉線步驟中無縮面率為15.5%以上之步驟,故而於導線中產生纖維狀組織,並且剖面<100>方位比率超出上限,表面<100>方位比率超過90%,因此彈性評估不良。比較例46、47、49、50由於最終熱處理溫度較高,故而表面<100>方位比率超出下限,偏斜評估不良。
本發明可利用於半導體。
Claims (4)
- 一種半導體裝置用接合導線,其特徵在於:其係Ag含量為90質量%以上者,且於包含導線中心且平行於導線長度方向之剖面即導線中心剖面中,不存在長徑a與短徑b之比a/b為10以上且面積為15μm2以上之晶粒,測定上述導線中心剖面之導線長度方向之結晶方位,結果相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率以面積率計為10%以上且未達50%,測定導線表面之導線長度方向之結晶方位,結果相對於上述導線長度方向角度差為15°以下之結晶方位<100>之存在比率以面積率計為70%以上。
- 如請求項1之半導體裝置用接合導線,其中上述半導體裝置用接合導線含有Pd、Cu、Au、Zn、Pt、Ge、Sn、Ti、Ni中之1種以上,於含有Pd、Cu、Au、Zn之情形時,其等之合計為0.01~8質量%,於含有Pt、Ge、Sn、Ti、Ni之情形時,其等之合計為0.001~1質量%,剩餘部分為Ag及雜質。
- 如請求項1或2之半導體裝置用接合導線,其中上述雜質中所包含之S為1質量ppm以下,Cl為0.5質量ppm以下。
- 一種半導體裝置用接合導線之製造方法,該半導體裝置用接合導線係如請求項1至3中任一項者,上述半導體裝置用接合導線之製造方法之特徵在於:具有進行1次以上之拉線加工之拉線步驟,於上述拉線步驟中,具有至少1次縮面率為15.5~30.5%之拉線加工,且於上述拉線步驟之中途進行1次以上之熱處理,於拉線步驟結束後進行最終熱處理,即將進行上述最終熱處理前之熱處理之溫度為300℃以上且未達600℃,上述最終熱處理之溫度為600℃以上且800℃以下。
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CN105247668B (zh) | 2017-05-10 |
TW201603150A (zh) | 2016-01-16 |
PH12015502710B1 (en) | 2016-03-14 |
PH12015502710A1 (en) | 2016-03-14 |
CN105247668A (zh) | 2016-01-13 |
SG11201509512RA (en) | 2015-12-30 |
JPWO2015152197A1 (ja) | 2017-04-13 |
US9543266B2 (en) | 2017-01-10 |
EP3007216A4 (en) | 2017-03-08 |
JP5840327B1 (ja) | 2016-01-06 |
PT3007216T (pt) | 2019-09-12 |
MY162021A (en) | 2017-05-31 |
EP3007216B1 (en) | 2019-06-26 |
KR101633411B1 (ko) | 2016-06-24 |
US20160104687A1 (en) | 2016-04-14 |
EP3007216A1 (en) | 2016-04-13 |
KR20150139980A (ko) | 2015-12-14 |
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