TWI542742B - Chemical vapor deposition reactor for producing polysilicon - Google Patents
Chemical vapor deposition reactor for producing polysilicon Download PDFInfo
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- TWI542742B TWI542742B TW103133807A TW103133807A TWI542742B TW I542742 B TWI542742 B TW I542742B TW 103133807 A TW103133807 A TW 103133807A TW 103133807 A TW103133807 A TW 103133807A TW I542742 B TWI542742 B TW I542742B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
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- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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Description
本發明關於一種在整個製造多晶矽的生產方法過程中,具有支撐矽棒的支撐物而用於生產多晶矽的化學汽相沉積反應器。 The present invention relates to a chemical vapor deposition reactor for producing polycrystalline germanium having a support for supporting a crucible rod throughout the production process of polycrystalline germanium.
多晶矽被用作為生產半導體產品或太陽能電池的原料。因此,對於適合用於製造半導體或太陽能電池原料的高純度多晶矽的需求也隨之增加。 Polycrystalline germanium is used as a raw material for the production of semiconductor products or solar cells. Therefore, there is an increasing demand for high purity polysilicon suitable for use in the manufacture of semiconductor or solar cell materials.
金屬矽是經由在電爐中熔化矽氧(silica)或二氧化矽(SiO2),並使用碳來還原產生。所產生金屬矽的純度約為98%,其中包括各種雜質,如鐵、鋁、鈣、鉻、錳、硼和銅。由於雜質的緣故,金屬矽並不適合用來作為半導體或太陽能電池的原料。 The metal ruthenium is produced by melting silica or cerium oxide (SiO 2 ) in an electric furnace and using carbon to reduce it. The resulting metal ruthenium has a purity of about 98% and includes various impurities such as iron, aluminum, calcium, chromium, manganese, boron, and copper. Metal ruthenium is not suitable for use as a raw material for semiconductors or solar cells due to impurities.
因此,將金屬矽與如氯化氫的反應性氣體反應,而氣化成為如三氯矽烷等之類者,然後將三氯矽烷經由蒸餾方法精製,使得雜質可以被除去。接著,使用化學氣相沉積反應器來進行,從三氯矽烷沉積矽藉此去除雜質的程序。 Therefore, the metal ruthenium is reacted with a reactive gas such as hydrogen chloride to be vaporized to become, for example, trichloromethane or the like, and then the trichloromethane is refined by a distillation method so that the impurities can be removed. Next, using a chemical vapor deposition reactor, a procedure for depositing ruthenium from trichloromethane to remove impurities is carried out.
例如,化學氣相沉積反應器包括設置在外殼內以固定矽絲的石墨電極夾盤,與反應性氣體藉此進入外殼內部的反應性氣體入口。石墨電極夾盤固定矽絲,並引導電力引發焦耳熱,而使得矽絲作為電阻。 For example, a chemical vapor deposition reactor includes a graphite electrode chuck disposed within the outer casing to secure the filaments, with a reactive gas entering the reactive gas inlet inside the outer casing. The graphite electrode chuck holds the filament and directs the electricity to induce Joule heat, which causes the filament to act as a resistor.
也就是說,當反應性氣體在預定的時間內以高壓的狀態被注入時,其中的矽絲又保持在高溫下,則反應性氣體被熱分解時矽析出到矽絲上。這樣沉積的矽而生成了的矽棒,增大了矽絲表面的外直徑。對應於矽的析出而 生成矽棒的負荷逐漸增大,因此當矽絲傾斜時,支撐矽棒的石墨電極夾盤可能會受到損壞。石墨電極夾盤的損壞可能會導通矽棒。矽棒的導通會造成嚴重的經濟損失。 That is, when the reactive gas is injected in a high pressure state for a predetermined period of time, the twisted wire therein is kept at a high temperature, and the reactive gas is decomposed on the twisted wire when it is thermally decomposed. The crucible formed by the thus deposited crucible increases the outer diameter of the surface of the crucible. Corresponding to the precipitation of 矽 The load that generates the crowbar is gradually increased, so the graphite electrode chuck supporting the crowbar may be damaged when the wire is tilted. Damage to the graphite electrode chuck may cause the rod to pass. The conduction of the crowbar can cause serious economic losses.
也就是說,矽棒可能由於反應性氣體在反應開始進行與在矽棒的直徑還小時會導通,矽棒也可能由於在反應的後期因矽棒的負荷,使得矽棒傾斜而導通。 That is to say, the crowbar may be turned on because the reactive gas is started at the start of the reaction and the diameter of the crowbar is small, and the crowbar may be turned on due to the tilting of the crowbar due to the load of the crowbar at the later stage of the reaction.
當矽棒的數量增加時,矽絲的長度又長,而矽棒的直徑因為矽沉積的緣故也大,可能會進一步提高矽棒導通的可能性。 When the number of crowbars increases, the length of the reel is long, and the diameter of the crowbar is large due to the deposition of enamel, which may further increase the possibility of crowbar conduction.
在先前技術部分公開的上述信息僅用於增加對本發明背景的理解,因此它可能會包含在這個國家中,並不是本技術領域中的普通技術人員已公知的先前技術的資訊。 The above information disclosed in the prior art section is only used to increase the understanding of the background of the invention, and thus it may be included in this country and is not prior art information well known to those of ordinary skill in the art.
本發明已努力提供一種在整個製造多晶矽的生產方法過程中,具有支撐矽棒的支撐物,而用於生產多晶矽的化學汽相沉積反應器。 The present inventors have endeavored to provide a chemical vapor deposition reactor for producing polycrystalline germanium during the entire production process for producing polycrystalline silicon, having a support for supporting a crucible rod.
另外,本發明已努力提供一種在整個製造多晶矽的生產方法過程中,經由支撐矽棒的支撐物而能夠防止矽棒導通,並用於生產多晶矽的化學汽相沉積反應器。 In addition, the present inventors have endeavored to provide a chemical vapor deposition reactor capable of preventing the conduction of the crucible rod and supporting the polycrystalline crucible by supporting the support of the crucible bar throughout the production process of the polycrystalline crucible.
本發明例示性的實施例提供了一種製造多晶矽的化學氣相沉積反應器,其包括:反應器,以供反應性氣體注入和排出;多個電極夾盤,安排成位在反應器的底部,以固定由矽沉積在複數個矽絲上所產生的每個矽棒;至少兩個矽橋,安排成與兩個相鄰的矽絲互連;以及支撐物,安排成將兩個矽橋一側的矽絲連接到兩個矽橋另一側的矽絲。 An exemplary embodiment of the present invention provides a chemical vapor deposition reactor for producing polycrystalline germanium, comprising: a reactor for injecting and discharging a reactive gas; and a plurality of electrode chucks arranged to be positioned at the bottom of the reactor, Fixing each of the crowbars produced by depositing a plurality of turns on the plurality of twisted wires; at least two of the bridges are arranged to be interconnected with two adjacent turns; and the support is arranged to connect the two bridges The side crepe is connected to the crepe on the other side of the two truss bridges.
矽絲包括固定到電極夾盤的圓筒部,和連接到圓筒部上端的截頭 圓錐部分,而配置在截頭圓錐部分的矽橋經由第一連接端,而將兩條矽絲互連。 The twisted wire includes a cylindrical portion fixed to the electrode chuck, and a truncated joint connected to the upper end of the cylindrical portion The conical portion, and the crucible bridge disposed in the frustoconical portion interconnects the two filaments via the first connection end.
一或多個支撐物,設置在矽絲的圓筒部與截頭圓錐部的至少一者中。 One or more supports are disposed in at least one of the cylindrical portion and the frustoconical portion of the filature.
支撐物和與矽橋一側連接的矽絲的截頭圓錐部嵌合,矽絲的截頭圓錐部經由第二連接器連接到矽橋的另一側,而且第二連接器被塑造成具有傾斜表面,其下部直徑比上部直徑大,以對應於截頭圓錐部。 The support is fitted with a frustoconical portion of the twisted wire connected to one side of the bridge, the frustoconical portion of the twisted wire is connected to the other side of the bridge via the second connector, and the second connector is shaped to have The inclined surface has a lower diameter larger than the upper diameter to correspond to the frustoconical portion.
多根矽絲在反應器內設置成同心排列的多個環形,並且可由矽橋和支撐件相互連接。 A plurality of filaments are disposed in the reactor in a plurality of concentric annular rings and are interconnected by a bridge and a support.
多根矽絲經由矽橋和支撐件互連,以形成一個同心環形部,又不同的環形部由連接件進一步相互連接。 A plurality of filaments are interconnected via a bridge and a support to form a concentric annular portion, and the different annular portions are further interconnected by a connector.
多根矽絲在反應器內佈置成一個三角形,並且支撐物形成一個三角形板,其一角提供有第二連接器以將三根矽絲連接在一起。 A plurality of filaments are arranged in a triangle in the reactor, and the support forms a triangular plate with a second connector at one corner to join the three filaments together.
多根矽絲在反應器內佈置成一個四角形,並且支撐物形成一個四角形板,其一角提供有第二連接器以將四個矽絲連接在一起。 A plurality of filaments are arranged in a quadrangular shape in the reactor, and the support forms a quadrangular plate, and a corner is provided with a second connector to connect the four wires together.
多根矽絲在反應器內佈置成一個圓形,並且支撐物形成包含多個第二連接器的一個圓形板,第二連接器沿圓周方向彼此隔開以將所有的矽絲連接在一起。 A plurality of filaments are arranged in a circular shape in the reactor, and the support forms a circular plate comprising a plurality of second connectors, the second connectors being spaced apart from each other in the circumferential direction to connect all the filaments together .
多根矽絲在反應器內佈置成一個同心圓形,並且支撐物形成包含多個第二連接器的多個環形帶,第二連接器沿同心圓周方向彼此隔開,以將所有的矽絲以帶狀同心圓連接在一起。 A plurality of filaments are arranged in a concentric circle within the reactor, and the support forms a plurality of annular strips comprising a plurality of second connectors, the second connectors being spaced apart from one another in a concentric circumferential direction to fold all of the filaments Connected together in a ribbon concentric circle.
支撐物更包括連接部,以相互連接帶狀同心圓。 The support further includes a connecting portion to connect the strip concentric circles to each other.
矽橋在第一連接器外形成第三連接器,支撐物形成對應於第三連接器的第四連接器,第三連接器和第四連接器經由***連接件相互連接。 The bridge bridge forms a third connector outside the first connector, the support forms a fourth connector corresponding to the third connector, and the third connector and the fourth connector are connected to each other via the insertion connector.
支撐物由電絕緣材料所製成。 The support is made of an electrically insulating material.
支撐物是由熔融二氧化矽(SiO2)、氮化矽(Si3N4)、氧化鋁(Al2O3)、 氧化鋯、氧化鎂(MgO)、或富鋁紅柱石(mullite,3Al2O3.2SiO2)中的任一項所製成。 The support is made of molten cerium oxide (SiO 2 ), cerium nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), zirconia, magnesium oxide (MgO), or mullite (3 mullite). Made of any of 2 O 3 .2SiO 2 ).
本發明的另一個實施例提供了一種製造多晶矽的化學氣相沉積反應器,包括:供反應性氣體注入和排出的反應器;安排成位在反應器的底部的電極夾盤,以固定由矽沉積在複數個矽絲上所生成的多個矽棒;以及安排成連接並支持矽絲與矽棒的支撐物。支撐物包括:將矽絲安排成穿過其中心的通孔而將矽絲連接至矽棒的盤;以及連接到盤的下表面上,以便位在反應器的底部的支撐部。 Another embodiment of the present invention provides a chemical vapor deposition reactor for producing polycrystalline germanium, comprising: a reactor for injecting and discharging a reactive gas; and an electrode chuck arranged at a bottom of the reactor to be fixed by a crucible a plurality of crowbars deposited on a plurality of filaments; and a support arranged to connect and support the filaments and the crowbars. The support includes: a disk in which the wire is arranged to pass through the center of the through hole to connect the wire to the bar; and a lower surface of the disk to be supported at the bottom of the reactor.
支撐部由多個支腳所形成。支撐部可由圓筒所形成。 The support portion is formed by a plurality of legs. The support portion may be formed by a cylinder.
根據本發明的實施方案中,經由以支撐物支撐矽絲和矽棒,可以在整個製造多晶矽的過程中穩定地支撐所產生的矽棒。也就是說,經由以支撐物支撐矽棒,有可能可以防止矽棒在整個過程中傳導。 According to the embodiment of the present invention, the generated crowbar can be stably supported throughout the process of manufacturing the polycrystalline silicon by supporting the twisted wire and the pry bar with the support. That is to say, by supporting the pry bar with the support, it is possible to prevent the pry bar from being conducted throughout the process.
1‧‧‧反應器 1‧‧‧reactor
2‧‧‧電極夾盤 2‧‧‧electrode chuck
3、31、32、23‧‧‧矽橋 3, 31, 32, 23‧ ‧ 矽 bridge
4、24、34、44、54、64、74、84、94、104‧‧‧支撐物 4, 24, 34, 44, 54, 64, 74, 84, 94, 104 ‧ ‧ support
5‧‧‧矽絲 5‧‧‧矽丝
6、26、36‧‧‧矽棒 6, 26, 36‧‧‧矽
7、37‧‧‧連接件 7, 37‧‧‧ Connections
27‧‧‧連接部 27‧‧‧Connecting Department
51‧‧‧圓筒部 51‧‧‧Cylinder
52‧‧‧截頭圓錐部 52‧‧‧Frustum
100、200、300、400、110、111、112‧‧‧化學氣相沉積反應器 100, 200, 300, 400, 110, 111, 112‧‧‧ chemical vapor deposition reactor
501、502、503‧‧‧環形部 501, 502, 503‧ ‧ ring
511‧‧‧圓筒部的下部 511‧‧‧The lower part of the cylinder
512‧‧‧圓筒部的上部 512‧‧‧Upper part of the cylinder
513‧‧‧嵌合溝 513‧‧‧Fitting groove
514‧‧‧嵌合突 514‧‧‧Chiss
641、642、741、742‧‧‧環形帶 641, 642, 741, 742‧‧ ‧ ring belt
941、141‧‧‧盤 941, 141‧‧
942、142‧‧‧支撐部 942, 142‧‧‧ support
H1‧‧‧第一連接器 H1‧‧‧ first connector
H2、H22、H32、H42、H52、H62‧‧‧第二連接器 H2, H22, H32, H42, H52, H62‧‧‧ second connector
H3‧‧‧第三連接器 H3‧‧‧ third connector
H4‧‧‧第四連接器 H4‧‧‧fourth connector
H14、H94‧‧‧通孔 H14, H94‧‧‧ through hole
P1‧‧‧截頭圓錐部分的上端 Upper end of the P1‧‧‧ frustoconical section
P2‧‧‧矽橋的下端 The lower end of the P2‧‧矽 bridge
P3‧‧‧圓筒部的中端 The middle end of the P3‧‧‧ cylinder
P4‧‧‧圓筒部的下端 P4‧‧‧The lower end of the cylindrical part
圖1繪示出根據本發明的第一例示性實施例,在化學氣相沉積反應器中矽絲是互連的狀態。 1 illustrates a state in which a filament is interconnected in a chemical vapor deposition reactor in accordance with a first exemplary embodiment of the present invention.
圖2是圖1中使用的支撐件的平面圖。 Figure 2 is a plan view of the support member used in Figure 1.
圖3是沿圖2中線III-III所截取的剖視圖。 Figure 3 is a cross-sectional view taken along line III-III of Figure 2.
圖4繪示出矽沉積在圖1的矽絲上以產生矽棒的狀態的圖。 4 is a view showing a state in which ruthenium is deposited on the ruthenium of FIG. 1 to produce a ruthenium rod.
圖5繪示出根據本發明的第二例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,矽絲互連的狀態圖。 Figure 5 depicts a state diagram of a filament interconnect in a chemical vapor deposition reactor for making polycrystalline germanium in accordance with a second exemplary embodiment of the present invention.
圖6繪示出根據本發明的第三例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,矽絲互連成環狀的狀態圖。 6 is a view showing a state in which a filament is interconnected in a ring shape in a chemical vapor deposition reactor for producing polycrystalline silicon according to a third exemplary embodiment of the present invention.
圖7是圖6的平面圖。 Figure 7 is a plan view of Figure 6.
圖8繪示出根據本發明的第四例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,矽絲互連成互連環狀的狀態平面圖。 8 is a plan view showing a state in which a filament is interconnected into an interconnected ring shape in a chemical vapor deposition reactor for producing polycrystalline silicon according to a fourth exemplary embodiment of the present invention.
圖9繪示出根據本發明的第五例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,支撐物連接三根佈置成一個三角形的矽絲的平面圖。 Figure 9 depicts a plan view of a support connecting three filaments arranged in a triangle in a chemical vapor deposition reactor for making polycrystalline germanium in accordance with a fifth exemplary embodiment of the present invention.
圖10繪示出根據本發明的第六例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,支撐物連接四根佈置成一個四角形的矽絲的平面圖。 Figure 10 depicts a plan view of a support connecting four filaments arranged in a quadrangular shape in a chemical vapor deposition reactor for producing polycrystalline germanium in accordance with a sixth exemplary embodiment of the present invention.
圖11繪示出根據本發明的第七例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,支撐物連接複數根佈置成一個圓形的矽絲的平面圖。 Figure 11 is a plan view showing a support connecting a plurality of turns of a circular filament in a chemical vapor deposition reactor for producing polycrystalline germanium according to a seventh exemplary embodiment of the present invention.
圖12繪示出根據本發明的第八例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,支撐物連接複數根佈置成一個圓形帶狀的矽絲的平面圖。 Figure 12 is a plan view showing a support in which a plurality of turns are arranged in a circular strip shape in a chemical vapor deposition reactor for producing polycrystalline germanium according to an eighth exemplary embodiment of the present invention.
圖13繪示出根據本發明的第九例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,支撐物連接複數根佈置成一個圓形帶狀並與帶狀互連的矽絲的平面圖。 Figure 13 illustrates a ninth exemplary embodiment of the present invention, in a chemical vapor deposition reactor for manufacturing polycrystalline germanium, a support is connected to a plurality of turns arranged in a circular strip shape and interconnected with a strip. Silk floor plan.
圖14繪示出根據本發明的第十例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,矽絲互連的狀態圖。 14 is a diagram showing a state of a filament interconnection in a chemical vapor deposition reactor for producing polycrystalline germanium according to a tenth exemplary embodiment of the present invention.
圖15繪示出根據本發明的第十一例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,矽絲由支撐件所支撐的狀態圖。 Figure 15 is a view showing a state in which a filament is supported by a support in a chemical vapor deposition reactor for producing polycrystalline silicon according to an eleventh exemplary embodiment of the present invention.
圖16是圖15的支撐件的示意圖。 Figure 16 is a schematic illustration of the support of Figure 15.
圖17繪示出根據本發明的第十二例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,矽絲由支撐件所支撐的狀態圖。 Figure 17 is a view showing a state in which a filament is supported by a support in a chemical vapor deposition reactor for producing polycrystalline silicon according to a twelfth exemplary embodiment of the present invention.
圖18是圖17的支撐件的示意圖。 Figure 18 is a schematic illustration of the support of Figure 17.
圖19是表示矽絲的數量與是否使用支撐物在傳導產生率上的相關性的曲線圖。 Fig. 19 is a graph showing the correlation between the number of twisted wires and whether or not the support is used in the rate of conduction generation.
圖20是表示矽絲的長度與傳導產生率在是否使用支撐物上的相關性的曲線圖。 Fig. 20 is a graph showing the correlation between the length of the twisted wire and the conduction generation rate on whether or not the support is used.
圖21是表示矽棒的最終直徑與傳導產生率在是否使用支撐物上的相關性的曲線圖。 Fig. 21 is a graph showing the correlation between the final diameter of the crowbar and the conduction generation rate on whether or not the support is used.
請參考以下例示的附圖以更充分地敘述本發明,其中顯示本發明示範性的實施例。 The invention will be described more fully hereinafter with reference to the accompanying drawings, in which <RTIgt;
正如本領域的技術人員所共知,所描述的實施例可以以各種不同的方式來修改,但都不脫離本發明的精神或範圍。附圖和描述應被視為說明性的而不是限制性的。整份說明書中,相似的參考數字表示相同的元件。 The described embodiments may be modified in various different ways, without departing from the spirit or scope of the invention. The drawings and the description are to be regarded as illustrative and not restrictive. Throughout the specification, like reference numerals refer to the like.
圖1繪示出根據本發明的第一例示性的實施例,在用於製造多晶矽的化學氣相沉積反應器中,矽絲互連的狀態圖。參考圖1,一種根據本發明第一例示性實施例用於製造多晶矽的化學汽相沉積反應器(下文中,簡稱為化學汽相沉積反應器)100,包括一個反應器1、電極夾盤2、矽橋3、與支撐物4。例如,反應器1的內部壓力保持在3巴至10巴,沉積時間設定為60小時至80小時,經由沉積矽所產生矽棒6(參考圖4)的表面溫度設定為1000℃~1200℃,注的入反應性氣體是矽烷化合物(三氯矽烷(TCS)(SiHCl3))和H2,並將冷卻水和電力供給到反應器1和電極夾盤2。用於沉積矽的反應性氣體經由反應器1注入並排出。多個電極夾盤2安排在反應器1的底部,並可由例如,石墨電極夾盤所形成,來固定多根矽絲,並將電力供給至多個矽細來造成矽絲5的焦耳生熱。例如,矽絲5的直徑為7公厘~10公厘,長度為2500公厘~3000公厘。經由在矽絲5上沉積矽所生成的矽棒6(參考圖4)可具有120公厘至150公厘的直徑。 1 depicts a state diagram of a filament interconnect in a chemical vapor deposition reactor for fabricating polycrystalline germanium in accordance with a first exemplary embodiment of the present invention. Referring to FIG. 1, a chemical vapor deposition reactor (hereinafter, simply referred to as a chemical vapor deposition reactor) 100 for manufacturing a polycrystalline silicon according to a first exemplary embodiment of the present invention includes a reactor 1, an electrode chuck 2 , 矽 bridge 3, and support 4. For example, the internal pressure of the reactor 1 is maintained at 3 to 10 bar, the deposition time is set to 60 to 80 hours, and the surface temperature of the crucible 6 (refer to FIG. 4) generated by deposition of crucible is set to 1000 ° C to 1200 ° C, The injected reactive gas is a decane compound (trichloromethane (TCS) (SiHCl 3 )) and H 2 , and cooling water and electric power are supplied to the reactor 1 and the electrode chuck 2. A reactive gas for depositing ruthenium is injected and discharged through the reactor 1. A plurality of electrode chucks 2 are arranged at the bottom of the reactor 1, and may be formed, for example, by a graphite electrode chuck to fix a plurality of filaments and supply electric power to a plurality of crucibles to cause Joule heat generation of the filaments 5. For example, the wire 5 has a diameter of 7 mm to 10 mm and a length of 2500 mm to 3000 mm. The pry bar 6 (refer to FIG. 4) generated by depositing ruthenium on the ruthenium 5 may have a diameter of 120 mm to 150 mm.
電極夾盤2在矽沉積反應前固定和支撐矽絲5,和在矽沉積反應開始之後,支撐經由來自反應性氣體的矽沉積在矽絲5上所產生的矽棒6。 The electrode chuck 2 fixes and supports the filament 5 before the ruthenium deposition reaction, and supports the ruthenium rod 6 produced on the ruthenium 5 via the ruthenium from the reactive gas after the ruthenium deposition reaction is started.
矽橋3將兩個相鄰的矽絲5互連,並安排成對來分別將至少四個矽絲5中的兩者互連。支撐物4將兩個矽橋31一側(圖1左側)的一個矽橋 31的矽絲5連接到兩個矽橋31另一側(圖1右側)的一個矽橋31的矽絲5。 The bridge 3 interconnects two adjacent turns 5 and is arranged in pairs to interconnect each of the at least four turns 5, respectively. The support 4 will be a bridge on one side of the two bridges 31 (left side of Figure 1) The twisted wire 5 of 31 is connected to the twisted wire 5 of one of the bridges 31 on the other side of the two bridges 31 (on the right side of Fig. 1).
例如,矽絲5包括固定到電極夾盤2的圓筒部51,其直徑為7公厘~10公厘,以及以傾斜的方式連接到圓筒部51的上端的截頭圓錐部分52。 For example, the twisted wire 5 includes a cylindrical portion 51 fixed to the electrode chuck 2, having a diameter of 7 mm to 10 mm, and a frustoconical portion 52 connected to the upper end of the cylindrical portion 51 in an inclined manner.
矽橋3將第一連接器H1安排在截頭圓錐部分52來將兩條矽絲5互連。第一連接器H1被作成具有傾斜面,其下部直徑比上部直徑大,以便對應於截頭圓錐部52,因此矽橋可以依其自身的重量,穩定地與截頭圓錐部分52嵌合。 The bridge 3 arranges the first connector H1 at the frustoconical portion 52 to interconnect the two wires 5. The first connector H1 is formed to have an inclined surface whose lower diameter is larger than the upper diameter so as to correspond to the frustoconical portion 52, so that the bridge can be stably fitted to the frustoconical portion 52 according to its own weight.
支撐物4可以是一個或多個、對應於矽絲5的圓筒部51與截頭圓錐部分52中的至少一個。如圖1所示,支撐件4安置在矽橋3上的截頭圓錐部分52。此外,如圖1的假想線所示,支撐物4可設置在截頭圓錐部分52的上端P1、矽橋3的下端P2和圓筒部51的中端P3或下端的P4上。 The support 4 may be one or more, corresponding to at least one of the cylindrical portion 51 and the frustoconical portion 52 of the twisted wire 5. As shown in Fig. 1, the support member 4 is disposed on the frustoconical portion 52 of the bridge 3. Further, as shown by the imaginary line of FIG. 1, the support 4 may be disposed at the upper end P1 of the frustoconical portion 52, the lower end P2 of the stern bridge 3, and the intermediate end P3 of the cylindrical portion 51 or the lower end P4.
圖2是在圖1中所使用的支撐件的平面圖,圖3是沿圖2的線III-III截取的剖視圖。請參考圖2和圖3,支撐物4與連接到矽橋31一側的矽絲52的截頭圓錐部分52,以及與由一對第二連接器的H2連接到矽橋3另一側的矽絲5的截頭圓錐部分52嵌合。 2 is a plan view of the support member used in FIG. 1, and FIG. 3 is a cross-sectional view taken along line III-III of FIG. 2. Referring to Figures 2 and 3, the support 4 is connected to the frustoconical portion 52 of the twisted wire 52 connected to the side of the bridge 31, and to the other side of the bridge 3 by a pair of second connectors H2. The frustoconical portion 52 of the dowel 5 is fitted.
第二連接器H2形成有傾斜面,其下部的直徑比上部的直徑大,以對應於截頭圓錐部分52,因此,支撐件可以因其自身的重量,而穩定地與截頭圓錐部分52嵌合。 The second connector H2 is formed with an inclined surface whose diameter is larger than the diameter of the upper portion to correspond to the frustoconical portion 52, and therefore, the support member can be stably embedded with the frustoconical portion 52 due to its own weight. Hehe.
支撐件4位在矽橋3上,因此與矽橋3一起位於截頭圓錐部分52,以使得第一連接器H1和第二連接器的H2的傾斜面,形成為對應於截頭錐形部分52的傾斜面。 The support member 4 is located on the bridge 3 and thus is located at the frustoconical portion 52 together with the bridge 3 such that the inclined faces of the first connector H1 and the H2 of the second connector are formed to correspond to the frustoconical portion The inclined surface of 52.
支撐件4由電性絕緣材料製成,例如,熔融二氧化矽(SiO2)、氮化矽(Si3N4)、氧化鋁(Al2O3)、氧化鋯、氧化鎂(MgO)、或富鋁紅柱石(mullite,3Al2O3.2SiO2)。 The support member 4 is made of an electrically insulating material, for example, molten cerium oxide (SiO 2 ), cerium nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), zirconia, magnesium oxide (MgO), Or mullite (mullite, 3Al 2 O 3 .2SiO 2 ).
也就是,支撐件4具有優異的電氣絕緣特性,而不影響所產生的多晶矽的純度,甚至在例如,1000℃或以上,仍具有較高的溫度穩定性。此 外,支撐件4是外加地用於矽橋3,所以需要價廉和容易加工。 That is, the support member 4 has excellent electrical insulating properties without affecting the purity of the polycrystalline silicon produced, and even at a temperature of, for example, 1000 ° C or higher, it has high temperature stability. this In addition, the support member 4 is applied to the bridge 3 in an applied manner, so that it is inexpensive and easy to process.
圖4繪示出矽沉積在圖1的矽絲上以產生矽棒的狀態。參考圖4,四根矽絲5由兩個矽橋3(31和32)彼此互連,而相鄰的矽絲5又被每個矽橋31和32互連,每個矽橋31和32則由一個支撐件4互連。在這種狀態下,當反應性氣體經由反應器1注入並排出而將矽沉積在矽絲5上時,即產生了矽棒6。 4 depicts a state in which ruthenium is deposited on the crepe of FIG. 1 to produce a sputum rod. Referring to Figure 4, the four turns 5 are interconnected by two bridges 3 (31 and 32), and adjacent turns 5 are interconnected by each of the bridges 31 and 32, each of which is 31 and 32. It is then interconnected by a support member 4. In this state, when the reactive gas is injected and discharged through the reactor 1 to deposit ruthenium on the ruthenium 5, the ruthenium rod 6 is produced.
這樣,矽橋3與支撐物4支撐矽絲5和矽棒6,因此,矽棒6可穩定地在整個製造多晶矽的過程中獲得支撐。也就是說,它可以防止矽棒6在整個的過程中被傳導。 Thus, the bridge 3 and the support 4 support the wire 5 and the crowbar 6, and therefore, the crowbar 6 can be stably supported throughout the process of manufacturing the polysilicon. That is, it can prevent the pry bar 6 from being conducted throughout the process.
以下,對本發明的各種例示性的實施方式進行說明。第一例示性實施例與以下的例示性實施例相比較,省略相同元件的描述,而對不同的元件進行說明。 Hereinafter, various exemplary embodiments of the invention will be described. The first exemplary embodiment is compared with the following exemplary embodiments, the description of the same elements is omitted, and the different elements are explained.
圖5繪示出根據本發明的第二例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,矽絲互連的狀態圖。參考圖5,根據本發明的第二例示性實施例的化學氣相沉積反應器200具有以下的結構,其中分離出根據本發明第一例示性實施例的化學氣相沉積反應器100的圓筒部51。 Figure 5 depicts a state diagram of a filament interconnect in a chemical vapor deposition reactor for making polycrystalline germanium in accordance with a second exemplary embodiment of the present invention. Referring to FIG. 5, a chemical vapor deposition reactor 200 according to a second exemplary embodiment of the present invention has a structure in which a cylinder of a chemical vapor deposition reactor 100 according to a first exemplary embodiment of the present invention is separated. Part 51.
此外,根據本發明的第一例示性實施例,支撐件4位在矽絲5的截頭圓錐部分52,然根據本發明的第二例示性實施例,支撐件24位在矽絲25的圓筒部251。 Further, according to the first exemplary embodiment of the present invention, the support member 4 is located at the frustoconical portion 52 of the twisted wire 5, and according to the second exemplary embodiment of the present invention, the support member 24 is positioned at the circle of the twisted wire 25. The barrel portion 251.
例如,根據本發明的第二例示性實施例,在矽絲25中,圓筒部251具有彼此分離的下部511和上部512,從而形成了一個彼此嵌合的結構。也就是,下部511上設置有嵌合溝513,而上部512設置有位在嵌合溝513中的嵌合突514。 For example, according to the second exemplary embodiment of the present invention, in the twisted wire 25, the cylindrical portion 251 has a lower portion 511 and an upper portion 512 which are separated from each other, thereby forming a structure in which they are fitted to each other. That is, the lower portion 511 is provided with the fitting groove 513, and the upper portion 512 is provided with the fitting protrusion 514 located in the fitting groove 513.
支撐件24與圓筒部251經由第二連接器H22加以嵌合。也就是說,上部512的嵌合突514經由第二連接器H22,與嵌合溝513嵌合。在這 種情況下,支撐件24位在圓筒部251的下部511,並和穿過第二連接器H22的嵌合突514相嵌合,同時又壓在圓筒部251的上部512。 The support member 24 and the cylindrical portion 251 are fitted via the second connector H22. That is, the fitting protrusion 514 of the upper portion 512 is fitted to the fitting groove 513 via the second connector H22. At this In this case, the support member 24 is located at the lower portion 511 of the cylindrical portion 251 and is fitted to the fitting protrusion 514 passing through the second connector H22 while being pressed against the upper portion 512 of the cylindrical portion 251.
根據本發明的第二例示性實施例,支撐件24位在圓筒部251的中部,其對應於本發明圖1的第一例示性實施例所述的結構,支撐件4位在圓筒部51的中間部分P3。 According to the second exemplary embodiment of the present invention, the support member 24 is located at the center of the cylindrical portion 251, which corresponds to the structure described in the first exemplary embodiment of Fig. 1 of the present invention, and the support member 4 is located at the cylindrical portion. The middle part P3 of 51.
圖6繪示出根據本發明的第三例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,矽絲互連成環狀的狀態平面圖,圖7是圖6的平面圖。參考圖6和圖7,在根據本發明的第三例示性實施例的化學氣相沉積反應器300中,多個電極夾盤2安排在反應器1內的多個同心環形中。 6 is a plan view showing a state in which a filament is interconnected in a ring shape in a chemical vapor deposition reactor for producing polycrystalline germanium according to a third exemplary embodiment of the present invention, and FIG. 7 is a plan view of FIG. Referring to FIGS. 6 and 7, in the chemical vapor deposition reactor 300 according to the third exemplary embodiment of the present invention, a plurality of electrode chucks 2 are arranged in a plurality of concentric rings in the reactor 1.
因此,多根矽絲5固定於電極夾盤2,因此位在反應器1內的多個同心環中。矽橋3與支撐物4以同心環的形狀與矽絲5互連。 Therefore, the plurality of twist wires 5 are fixed to the electrode chuck 2, and thus are located in a plurality of concentric rings in the reactor 1. The bridge 3 and the support 4 are interconnected with the filament 5 in the shape of a concentric ring.
也就是,矽橋3與佈置成環形中截頭圓錐部分52的矽絲5的兩個相鄰的矽絲5互連。在矽橋3上的支撐件4與由不同矽橋3所連接的矽絲5的截頭圓錐部分52互連。 That is, the bridge 3 is interconnected with two adjacent turns 5 of the twisted wire 5 arranged in the annular frustoconical portion 52. The support 4 on the bridge 3 is interconnected with a frustoconical portion 52 of the twisted wire 5 connected by a different bridge 3.
也就是,矽絲5由矽橋3與支撐物4互連成一個環形,而具有多重支撐的力量。位在多個環形中的矽絲5可以在每個環形中連接,而具有多重支撐的力量。因此,矽絲5和矽棒6(參考圖4)可以在整個製造多晶矽的過程中穩定地獲得支撐。也就是說,它可以防止矽棒6在整個過程中被傳導。 That is, the twisted wire 5 is interconnected by the bridge 3 and the support 4 into a ring shape, and has multiple supporting forces. The filaments 5 positioned in a plurality of rings can be connected in each of the rings with the force of multiple supports. Therefore, the filature 5 and the ram 6 (refer to FIG. 4) can stably obtain support throughout the process of manufacturing the polysilicon. That is, it can prevent the pry bar 6 from being conducted throughout the process.
圖8繪示出根據本發明的第四例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,矽絲互連成互連環狀的狀態平面圖。參考圖8,根據本發明的第四例示性實施例的化學氣相沉積反應器400中,除了根據本發明的第三例示性實施例的化學氣相沉積反應器300中的元件外,進一步包括一個連接件7。 8 is a plan view showing a state in which a filament is interconnected into an interconnected ring shape in a chemical vapor deposition reactor for producing polycrystalline silicon according to a fourth exemplary embodiment of the present invention. Referring to FIG. 8, a chemical vapor deposition reactor 400 according to a fourth exemplary embodiment of the present invention, in addition to the elements in the chemical vapor deposition reactor 300 according to the third exemplary embodiment of the present invention, further includes A connector 7.
多根矽絲5由矽橋3與支撐物4互相連接形成同心環形部501、502和503。連接件7進一步連接不同的環形部501、502和503。 The plurality of twist wires 5 are interconnected by the bridge 3 and the support 4 to form concentric annular portions 501, 502 and 503. The connector 7 further connects the different annular portions 501, 502 and 503.
也就是,在截頭圓錐部分52的矽橋3互連每一個由環形部501、 502和503所安排的矽絲5中的兩個相鄰的矽絲5。在矽橋3上的支撐件4經由不同的矽橋3將矽絲5的截頭圓錐部分52互連。連接件7所連接的截頭圓錐部分52,是具有不同環形部501、502和503的截頭圓錐部分52,又為矽橋3或支撐件4所連接者。 That is, the dam bridges 3 at the frustoconical portion 52 are interconnected by each of the annular portions 501, Two adjacent twisted wires 5 of the twisted wires 5 arranged by 502 and 503. The support members 4 on the bridge 3 interconnect the frustoconical portions 52 of the strands 5 via different jaw bridges 3. The frustoconical portion 52 to which the connecting member 7 is attached is a frustoconical portion 52 having different annular portions 501, 502 and 503, and is also connected to the bridge 3 or the support member 4.
也就是說,矽絲5由於環形部501、502和503被矽橋3和支撐件4所連接,而具有相互支撐的力量。此外,由於連接件7,每個環形部501、502和503可以具有相互支撐的力量。因此,能夠有效地防止矽絲5和矽棒6(參考圖4)在整個製造多晶矽的過程中被傳導。 That is, the twisted wire 5 has a force of mutual support since the annular portions 501, 502, and 503 are connected by the bridge 3 and the support member 4. Further, each of the annular portions 501, 502, and 503 may have a mutual supporting force due to the connecting member 7. Therefore, it is possible to effectively prevent the filament 5 and the crucible 6 (refer to FIG. 4) from being conducted throughout the process of manufacturing the polysilicon.
圖9是繪示根據本發明的第五例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,支撐物連接佈置成一個三角形中的三根矽絲的平面圖。參考圖9,根據本發明的第四例示性實施例的化學氣相沉積反應器中,多個電極夾盤(未繪示)位在位於反應器內的三角形中。 9 is a plan view showing three support wires arranged in a triangle in a chemical vapor deposition reactor for manufacturing polycrystalline germanium according to a fifth exemplary embodiment of the present invention. Referring to FIG. 9, in a chemical vapor deposition reactor according to a fourth exemplary embodiment of the present invention, a plurality of electrode chucks (not shown) are located in a triangle located inside the reactor.
多根矽絲5位在位於反應器內的三角形中,同時支撐物34形成三角形的板,以連接所有的三根矽絲5。 The plurality of strands 5 are in a triangle located in the reactor while the supports 34 form a triangular plate to connect all three strands 5.
三角形板的支撐物34的每個角都設置有第二連接器H32。因此,支撐物34將位於三角形中的三根矽絲5的截頭圓錐部分52與第二連接器H32嵌合,來連接三根矽絲5。因此,就能夠有效地防止矽絲5和矽棒6(參考圖4)在整個製造多晶矽的過程中被傳導。 Each corner of the support 34 of the triangular plate is provided with a second connector H32. Therefore, the support 34 fits the frustoconical portion 52 of the three twisted wires 5 located in the triangle with the second connector H32 to connect the three twisted wires 5. Therefore, it is possible to effectively prevent the filament 5 and the crucible 6 (refer to FIG. 4) from being conducted throughout the process of manufacturing the polysilicon.
圖10是繪示根據本發明的第六例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,支撐物連接位在一個四角形中的四根矽絲的平面圖。參考圖10,在根據本發明第六例示性實施例的化學氣相沉積反應器中,多個電極夾盤(未示出)位在位於反應器內的四角形中。 Figure 10 is a plan view showing four crucibles in which a support is connected in a square shape in a chemical vapor deposition reactor for producing polycrystalline germanium according to a sixth exemplary embodiment of the present invention. Referring to FIG. 10, in a chemical vapor deposition reactor according to a sixth exemplary embodiment of the present invention, a plurality of electrode chucks (not shown) are located in a square shape located inside the reactor.
多根矽絲5位在位於反應器內的四角形中,同時支撐物44形成四角形的板,以連接所有的四個矽絲5。 A plurality of strands 5 are in a square shape located inside the reactor, while the support 44 forms a quadrangular plate to connect all of the four strands 5.
四角形板的支撐物44的每個角都提供有第二連接器H42。因此,支撐物44將位於四角形中的四根矽絲5的截頭圓錐部分52與第二連接器H42 嵌合,來連接四根矽絲5。因此,就能夠有效地防止矽絲5和矽棒6(參考圖4)在整個製造多晶矽的過程中被傳導。 Each corner of the support 44 of the quadrangular plate is provided with a second connector H42. Therefore, the support 44 will be located in the truncated conical portion 52 of the four turns 5 in the quadrilateral and the second connector H42 Fit to join the four strands 5. Therefore, it is possible to effectively prevent the filament 5 and the crucible 6 (refer to FIG. 4) from being conducted throughout the process of manufacturing the polysilicon.
圖11是繪示根據本發明的第七例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,支撐物連接位在一個圓中的多根矽絲的平面圖。參考圖11,在根據本發明第七例示性實施例的化學氣相沉積反應器中,多個電極夾盤(未示出)位在位於反應器內的圓形中。 Figure 11 is a plan view showing a plurality of turns of a support in a circle in a chemical vapor deposition reactor for producing polycrystalline silicon according to a seventh exemplary embodiment of the present invention. Referring to Fig. 11, in a chemical vapor deposition reactor according to a seventh exemplary embodiment of the present invention, a plurality of electrode chucks (not shown) are positioned in a circle located inside the reactor.
多根矽絲5位在位於反應器內的圓形中,同時支撐物54形成圓形板,以連接所有的多根矽絲5。 The plurality of strands 5 are in a circle located inside the reactor while the support 54 forms a circular plate to connect all of the plurality of strands 5.
支撐物54包括多個沿圓形板的圓周方向彼此間隔開的第二連接器H52。因此,支撐物54將位於圓形中的多根矽絲5的截頭圓錐部分52與第二連接器H52嵌合,來連接多根矽絲5。 The support 54 includes a plurality of second connectors H52 spaced apart from each other in the circumferential direction of the circular plate. Therefore, the support 54 fits the frustoconical portion 52 of the plurality of twisted wires 5 located in a circle with the second connector H52 to connect the plurality of twisted wires 5.
圖12是繪示根據本發明的第八例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,支撐物連接位在一個環形帶中的多根矽絲的平面圖。參考圖12,在根據本發明第八例示性實施例的化學氣相沉積反應器中,多個電極夾盤(未示出)位在位於反應器內的同心圓中。 Figure 12 is a plan view showing a plurality of twisted wires in which a support is joined in an endless belt in a chemical vapor deposition reactor for producing polycrystalline silicon according to an eighth exemplary embodiment of the present invention. Referring to FIG. 12, in a chemical vapor deposition reactor according to an eighth exemplary embodiment of the present invention, a plurality of electrode chucks (not shown) are located in concentric circles located inside the reactor.
多根矽絲5位在位於反應器內的同心圓中,同時支撐物64形成多個同心的環形帶641和642,以連接成同心帶狀的多根矽絲5。 A plurality of filaments 5 are located in concentric circles in the reactor, while the support 64 forms a plurality of concentric annular strips 641 and 642 to join a plurality of filaments 5 in a concentric band shape.
支撐物64包括多個沿環形帶641和642的圓周方向彼此間隔開的第二連接器H62。因此,支撐物54將對應於環形帶641和642而位在圓中的多根矽絲5的截頭圓錐部分52與第二連接器H62嵌合,來連接多根矽絲5。 The support 64 includes a plurality of second connectors H62 spaced apart from each other in the circumferential direction of the endless belts 641 and 642. Therefore, the support 54 fits the frustoconical portion 52 of the plurality of twisted wires 5 positioned in the circle corresponding to the endless belts 641 and 642 with the second connector H62 to connect the plurality of twisted wires 5.
也就是說,在截頭圓錐部分52的矽橋(未繪示)將排成環形的矽絲5中的兩根相鄰的矽絲5相互連接。在矽橋3上的支撐物64,將由不同矽橋3連接的矽絲5的截頭圓錐部分52互連。 That is, the dam bridge (not shown) at the frustoconical portion 52 connects the two adjacent filatures 5 in the annular filature 5 to each other. The support 64 on the bridge 3 interconnects the frustoconical portions 52 of the turns 5 connected by different bridges 3.
也就是說,矽絲5使用矽橋(未繪示)和支撐物64而經由環形帶641和642互連,而具有相互支撐的力量。設置成對應於多個圓形帶的矽絲5可以經由每個環形帶641和642相互連接,而具有相互支撐的力量。因此, 矽絲5和矽棒6(參考圖4)可以在整個製造多晶矽的過程中穩定地獲得支撐。也就是說,就可以防止矽棒6在整個過程中被傳導。 That is, the twisted wire 5 is interconnected via the endless belts 641 and 642 using a bridge (not shown) and a support 64, and has mutually supporting forces. The filaments 5 arranged to correspond to a plurality of circular bands may be connected to each other via each of the endless belts 641 and 642 to have mutually supporting forces. therefore, The filature 5 and the ram 6 (refer to FIG. 4) can stably obtain support throughout the process of manufacturing the polysilicon. That is to say, it is possible to prevent the pry bar 6 from being conducted throughout the process.
圖13是繪示根據本發明的第九例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,支撐物連接位在一個互連的環形帶中的多根矽絲的平面圖。參考圖13,根據本發明第九例示性實施例的化學氣相沉積反應器,除了根據本發明第八例示性實施例的化學氣相沉積反應器中的元件外,更包括一連接部27。 Figure 13 is a plan view showing a plurality of turns of a support in an interconnected endless belt in a chemical vapor deposition reactor for producing polycrystalline germanium in accordance with a ninth exemplary embodiment of the present invention. Referring to Fig. 13, a chemical vapor deposition reactor according to a ninth exemplary embodiment of the present invention includes a connecting portion 27 in addition to the elements in the chemical vapor deposition reactor according to the eighth exemplary embodiment of the present invention.
多根矽絲5由矽橋(未繪示)和支撐物74互連,以形成同心的環形帶741和742。連接部27還連接不同的環形帶741和742。 A plurality of twist wires 5 are interconnected by a bridge (not shown) and a support 74 to form concentric annular strips 741 and 742. The connecting portion 27 is also connected to different endless belts 741 and 742.
也就是說,在截頭圓錐部分52的矽橋(未繪示)經由各環形帶741和742將矽絲5中兩個相鄰的矽絲5相互連接。在矽橋3上的支撐物74經由不同的矽橋3將連接起來的矽絲5的截頭圓錐部分52互連。連接部27將支撐物74的環形帶741和742互連。 That is, the dam bridge (not shown) at the frustoconical portion 52 connects the two adjacent filatures 5 of the filature 5 to each other via the respective endless belts 741 and 742. The supports 74 on the bridge 3 interconnect the frustoconical portions 52 of the connected strands 5 via different jaw bridges 3. The connecting portion 27 interconnects the endless belts 741 and 742 of the support 74.
也就是說,矽絲5經由以矽橋(未繪示)和支撐物74所互連的環形帶741和742,而具有相互支撐的力量。再者,每個環形帶741和742又經由連接部27,而具有相互支撐的力量。因此,就可以防止矽絲5和矽棒6(參考圖4)在整個製造多晶矽的過程中被傳導。 That is, the twisted wire 5 has mutually supporting forces via the endless belts 741 and 742 interconnected by a bridge (not shown) and a support 74. Furthermore, each of the endless belts 741 and 742 is in turn connected to each other via the connecting portion 27 with a force of mutual support. Therefore, it is possible to prevent the filament 5 and the crucible 6 (refer to Fig. 4) from being conducted throughout the process of manufacturing the polysilicon.
圖14是繪示根據本發明的第十例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,多根矽絲互連的狀態圖。參考圖14,在根據本發明的第十例示性實施例的化學氣相沉積反應器110中,矽橋23還形成了在第一連接器H1以外的第三連接器H3,而支撐物84形成了對應於第三連接器H3的第四連接器H4。第三連接器H3和第四連接器H4是經由***的連接件37相互連接。 Figure 14 is a diagram showing a state of interconnection of a plurality of filaments in a chemical vapor deposition reactor for producing polycrystalline germanium according to a tenth exemplary embodiment of the present invention. Referring to FIG. 14, in the chemical vapor deposition reactor 110 according to the tenth exemplary embodiment of the present invention, the bridge 23 also forms a third connector H3 outside the first connector H1, and the support 84 is formed. A fourth connector H4 corresponding to the third connector H3 is provided. The third connector H3 and the fourth connector H4 are connected to each other via the inserted connector 37.
例如,連接件37的中間部分具有最大的直徑,並具有朝向兩端減小的直徑,從而形成與矽橋23的第三連接器的H3嵌合,而對應於支撐物84的第四連接器H4。 For example, the intermediate portion of the connector 37 has the largest diameter and has a diameter that decreases toward both ends, thereby forming a H3 fitting with the third connector of the bridge 23, and a fourth connector corresponding to the support 84. H4.
矽橋23位在截頭圓錐部分52,而由第一連接器H1與兩根矽絲5互連。將連接件37置入矽橋23的第二連接器的H3中,使得支撐物84與第四連接器H4嵌合,來將兩個相鄰的矽絲5相互連接。 The bridge 23 is in the frustoconical portion 52 and is interconnected by the first connector H1 and the two turns 5 . The connector 37 is placed in the H3 of the second connector of the bridge 23 such that the support 84 is fitted into the fourth connector H4 to connect the two adjacent turns 5 to each other.
也就是說,兩個相鄰矽絲5的截頭圓錐部分52經由矽橋23互連,兩個相鄰的矽橋23由被連接件37置入的支撐物84互連。因此,能夠有效地防止矽絲5和矽棒6(參考圖4)在整個製造多晶矽的過程中被傳導。 That is, the frustoconical portions 52 of two adjacent twisted wires 5 are interconnected via a truss bridge 23, and two adjacent truss bridges 23 are interconnected by a support 84 that is placed by the connector 37. Therefore, it is possible to effectively prevent the filament 5 and the crucible 6 (refer to FIG. 4) from being conducted throughout the process of manufacturing the polysilicon.
圖15是繪示根據本發明的第十一例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,一根矽絲由一支撐件所支撐的狀態圖。圖16是圖15的支撐件的示意圖。參考圖15和16,在根據本發明的第十一例示性實施例的化學氣相沉積反應器111中,支撐件94包括盤941和支撐部942。 Figure 15 is a view showing a state in which a filament is supported by a support member in a chemical vapor deposition reactor for producing polycrystalline silicon according to a tenth exemplary embodiment of the present invention. Figure 16 is a schematic illustration of the support of Figure 15. Referring to FIGS. 15 and 16, in the chemical vapor deposition reactor 111 according to the eleventh exemplary embodiment of the present invention, the support member 94 includes a disk 941 and a support portion 942.
盤941連接並且支撐由矽絲5穿過其中心的通孔H94所產生的矽棒26。支撐部942連接到盤941的下表面,並位在反應器的底部,以支撐盤941。例如,支撐部942可以由多隻支腳來形成。 The disk 941 is connected and supports the tamper bar 26 produced by the through hole H94 of the filature 5 passing through the center thereof. The support portion 942 is attached to the lower surface of the disk 941 and is positioned at the bottom of the reactor to support the disk 941. For example, the support portion 942 may be formed by a plurality of legs.
由沉積矽在矽絲5上所生成的矽棒26,分別形成在盤941的上表面和下表面上。因此,支撐件94可以在生產多晶矽的過程中更穩定地支撐矽絲5和矽棒26。 The crowbars 26 formed by depositing the crucibles on the filaments 5 are formed on the upper and lower surfaces of the disc 941, respectively. Therefore, the support member 94 can support the twisted wire 5 and the pry bar 26 more stably in the process of producing the polycrystalline crucible.
圖17是繪示根據本發明的第十二例示性實施例,在用於製造多晶矽的化學氣相沉積反應器中,一根矽絲由一支撐件所支撐的狀態圖。圖18是圖17的支撐件的示意圖。參考圖17和圖18,在根據本發明的第十二例示性實施例的化學氣相沉積反應器112中,支撐件104包括盤141和支撐部142。 Figure 17 is a view showing a state in which a twisted wire is supported by a support member in a chemical vapor deposition reactor for producing polycrystalline silicon according to a twelfth exemplary embodiment of the present invention. Figure 18 is a schematic illustration of the support of Figure 17. Referring to FIGS. 17 and 18, in the chemical vapor deposition reactor 112 according to the twelfth exemplary embodiment of the present invention, the support member 104 includes a disk 141 and a support portion 142.
盤141連接並且支撐由矽絲5穿過其中心的通孔H14所產生的矽棒36。支撐部142連接到盤141的下表面,並位在反應器的底部,以支撐盤141。例如,支撐部142可以由圓筒來形成。 The disk 141 is connected and supports the tamper bar 36 produced by the through hole H14 of the filature 5 passing through the center thereof. The support portion 142 is attached to the lower surface of the disk 141 and is positioned at the bottom of the reactor to support the disk 141. For example, the support portion 142 may be formed of a cylinder.
由沉積矽在矽絲5上所生成的矽棒36,形成在盤941的上表面上。因此,在生產多晶矽的過程中,矽棒36部分地產生在矽絲5中,支撐件94可以更穩定地支撐矽絲5和矽棒26。 A pry bar 36 formed by depositing enamel on the filature 5 is formed on the upper surface of the disk 941. Therefore, in the process of producing the polycrystalline crucible, the crucible 36 is partially produced in the crucible 5, and the support member 94 can support the crucible 5 and the crucible 26 more stably.
此後,在應用本發明的例示性實施例時,將描述經由將矽沉積在矽絲5上所生成的矽棒6的傳導產生率。為方便起見,本發明的第一例示性實施例將作為敘述的基準。 Hereinafter, when the exemplary embodiment of the present invention is applied, the conduction generation rate of the crucible rod 6 generated by depositing the crucible on the filament 5 will be described. For convenience, the first exemplary embodiment of the present invention will serve as a reference for the description.
圖19是表示矽絲的數量與是否使用支撐件在傳導產生率上的相關性的曲線圖。 Fig. 19 is a graph showing the correlation between the number of twisted wires and whether or not the support member is used in the conduction generation rate.
參考圖19,當矽棒6的數目增加時,矽棒6的傳導產生率也隨之增加。 Referring to Fig. 19, as the number of the crowbars 6 is increased, the conduction generation rate of the crowbars 6 is also increased.
在矽棒6的數量是相同時的狀態下,使用支撐物的情況,矽棒6的傳導產生率是低於不使用支撐物4的情況。也就是,可以理解的是,支撐件4降低了矽棒6的傳導產生率。 In the state in which the number of the crowbars 6 is the same, in the case of using the support, the conduction generation rate of the crowbar 6 is lower than the case where the support 4 is not used. That is, it can be understood that the support member 4 reduces the conduction generation rate of the crowbar 6.
圖20是表示矽絲的長度與傳導產生率在是否使用支撐物上的相關性的曲線圖。參考圖20,當矽絲5的長度增加時,矽棒6的傳導產生率也隨之增加。 Fig. 20 is a graph showing the correlation between the length of the twisted wire and the conduction generation rate on whether or not the support is used. Referring to Fig. 20, as the length of the wire 5 is increased, the conduction rate of the crowbar 6 is also increased.
在矽絲5的長度是相同的狀態下,使用支撐物4的矽棒6的傳導產生率是低於不使用支撐物4的情況。也就是,可以理解的是,支撐件4降低了矽棒6的傳導產生率。 In the state where the lengths of the twisted wires 5 are the same, the conduction generation rate of the crowbars 6 using the support 4 is lower than the case where the support 4 is not used. That is, it can be understood that the support member 4 reduces the conduction generation rate of the crowbar 6.
圖21是表示矽棒的最終直徑與在是否使用支撐物上的傳導產生率的相關性的曲線圖。參考圖21,當矽棒6的最終直徑增大時,矽棒6的傳導產生率增加。 Fig. 21 is a graph showing the correlation between the final diameter of the crowbar and the conduction generation rate on whether or not the support is used. Referring to Fig. 21, when the final diameter of the crowbar 6 is increased, the conduction generation rate of the crowbar 6 is increased.
在矽絲5的最終直徑是相同的狀態下,使用支撐物4的矽棒6的傳導產生率是低於不使用支撐物4的情況。也就是,可以理解的是,支撐件4降低了矽棒6的傳導產生率。 In the state where the final diameter of the twisted wire 5 is the same, the conduction generation rate of the crowbar 6 using the support 4 is lower than the case where the support 4 is not used. That is, it can be understood that the support member 4 reduces the conduction generation rate of the crowbar 6.
雖然本發明已經結合目前被認為是實際的示範性實施例進行了描述,但是應當理解的是,本發明並不限定於所公開的實施例,而是包含在所附請求項的精神和範圍內的各種修改和等同安排。 Although the present invention has been described in connection with what is presently considered as an exemplary embodiment, it is understood that the invention is not limited to the disclosed embodiments Various modifications and equivalent arrangements.
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
1‧‧‧反應器 1‧‧‧reactor
2‧‧‧電極夾盤 2‧‧‧electrode chuck
3、31、32‧‧‧矽橋 3, 31, 32‧ ‧ 矽 bridge
4‧‧‧支撐物 4‧‧‧Support
5‧‧‧矽絲 5‧‧‧矽丝
51‧‧‧圓筒部 51‧‧‧Cylinder
52‧‧‧截頭圓錐部 52‧‧‧Frustum
100‧‧‧化學氣相沉積反應器 100‧‧‧Chemical vapor deposition reactor
H1‧‧‧第一連接器 H1‧‧‧ first connector
P1‧‧‧截頭圓錐部分的上端 Upper end of the P1‧‧‧ frustoconical section
P2‧‧‧矽橋的下端 The lower end of the P2‧‧矽 bridge
P3‧‧‧圓筒部的中端 The middle end of the P3‧‧‧ cylinder
P4‧‧‧圓筒部的下端 P4‧‧‧The lower end of the cylindrical part
Claims (17)
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KR1020130115258A KR101654148B1 (en) | 2013-09-27 | 2013-09-27 | Chemical vapor deposition reactor for producing polysilicon |
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TW201522724A TW201522724A (en) | 2015-06-16 |
TWI542742B true TWI542742B (en) | 2016-07-21 |
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TW103133807A TWI542742B (en) | 2013-09-27 | 2014-09-29 | Chemical vapor deposition reactor for producing polysilicon |
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KR (1) | KR101654148B1 (en) |
TW (1) | TWI542742B (en) |
WO (1) | WO2015046948A1 (en) |
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WO2020235264A1 (en) * | 2019-05-21 | 2020-11-26 | 株式会社トクヤマ | Unloading jig, unloading method, and method for producing silicon rod |
SG11202111089TA (en) * | 2019-05-21 | 2021-11-29 | Tokuyama Corp | Unloading jig, unloading method, and method for producing silicon rod |
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US9683286B2 (en) * | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
KR100768148B1 (en) | 2006-05-22 | 2007-10-17 | 한국화학연구원 | Methods for preparation of high-purity poly-silicon rods using metallic core means |
KR100783667B1 (en) * | 2006-08-10 | 2007-12-07 | 한국화학연구원 | Method and apparatus for preparation of granular polysilicon |
US20090191336A1 (en) * | 2008-01-30 | 2009-07-30 | Mohan Chandra | Method and apparatus for simpified startup of chemical vapor deposition of polysilicon |
KR101115697B1 (en) * | 2009-12-02 | 2012-03-06 | 웅진폴리실리콘주식회사 | Cvd reactor with energy efficient thermal-radiation shield |
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2014
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KR20150035093A (en) | 2015-04-06 |
WO2015046948A1 (en) | 2015-04-02 |
TW201522724A (en) | 2015-06-16 |
KR101654148B1 (en) | 2016-09-05 |
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