TWI538018B - Semiconductor substrate for composite substrate - Google Patents

Semiconductor substrate for composite substrate Download PDF

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Publication number
TWI538018B
TWI538018B TW103110605A TW103110605A TWI538018B TW I538018 B TWI538018 B TW I538018B TW 103110605 A TW103110605 A TW 103110605A TW 103110605 A TW103110605 A TW 103110605A TW I538018 B TWI538018 B TW I538018B
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Taiwan
Prior art keywords
substrate
concave portion
stage
stage substrate
bonding
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TW103110605A
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English (en)
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TW201508820A (zh
Inventor
Akiyoshi Ide
Yasunori Iwasaki
Sugio Miyazawa
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Ngk Insulators Ltd
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Publication of TW201508820A publication Critical patent/TW201508820A/zh
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Publication of TWI538018B publication Critical patent/TWI538018B/zh

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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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Description

半導體用複合基板的載台基板
本發明係關於半導體用複合基板的載台基板(handling substrate)。
習知已知有藉由使Silicon on Quartz(SOQ，石英上覆單晶矽)、Silicon on Glass(SOG，旋塗式玻璃)、Silicon on Sapphire(SOS，藍寶石基底上矽)等通稱「載台基板」，接合於由透明‧絕緣基板構成的SOI、或者使GaN、ZnO、鑽石、AlN等透明寬能帶隙半導體(wide-gap semiconductor)接合於矽等施體基板，便可獲得貼合晶圓。SOQ、SOG、SOS等因為載台基板的絕緣性‧透明性等，可期待應用於投影機、高頻裝置等處。又，使寬能帶隙半導體的薄膜複合化為載台基板的貼合晶圓，可期待應用於高性能雷射、功率裝置等。
此種半導體積體電路用複合基板係由載台基板與施體基板構成，一般載台基板與施體基板係由單晶材料構成。習知係以在基底基板上磊晶成長矽層而形成的方法為主流，近年有開發利用直接接合而形成的方法，對半導體裝置的性能改善具有貢獻。專利文獻1、2、3)。即，此種載台基板與施體基板係經由接合層或接著層而接合、或者直接接合。又，隨接合技術的進步，亦有由諸如石英、玻璃、氧化鋁等除藍寶石以外 材質構成載台基板的各種提案專利文獻4、5、6、7)。
(先行技術文獻)
專利文獻1：日本專利特開平08-512432
專利文獻2：日本專利特開2003-224042
專利文獻3：日本專利特開2010-278341
專利文獻4：WO2010/128666 A1
專利文獻5：日本專利特開平05-160240
專利文獻6：日本專利特開平05-160240
專利文獻7：日本專利特開2008-288556
在與施體基板接合時所使用的載台基板，為使由分子間作用力產生的接合力能最大化，便利用CMP等施行高精度研磨，最好使Ra值在5nm以下。但是，依此完成的複合基板在各種半導體程序的過程中，經常會被曝曬於接近1000℃的溫度環境中。所以，當功能層、支撐基板及接合層係屬於不同材料的情況，會有因各材料的熱膨脹差而造成基板剝離問題發生。故，最好為能將由分子間作用力產生的接合力最大化而將載台基板表面的Ra值保持於較低，且同時能承受接合後的高溫程序所生成之熱應力。
本發明課題在於：就半導體用複合基板的載台基板，能與施體基板接合，且對接合後的高溫程序所生成熱應力可呈現高耐久性。
本發明的半導體用複合基板的載台基板，其特徵 在於：載台基板係由絕緣性多結晶材料形成，載台基板表面的微觀中心線平均表面粗糙度Ra係在5nm以下，在載台基板表面上有形成凹部。
再者，本發明的半導體用複合基板，係具備有：上述載台基板、以及載台基板直接或經由接合層接合於上述表面的施體基板。
若載台基板係藍寶石基板，則表面可設為極為平滑，但是若經接合後的複合基板提供進行高溫程序，則會因載台基板與施體基板間的熱膨脹差而容易發生龜裂、剝離。
所以，本發明者利用多結晶材料形成載台基板。此處，多結晶材料係具有由多數微細粒子相黏結的微構造。本發明者在成形此種多結晶材料後，藉由對表面施行適當精密研磨加工而使Ra充分變小，同時藉由在表面使相鄰接結晶粒子間的微細結晶粒脫落、或積極活用結晶內部存在的氣泡，便獲得殘留微細凹部的構造。
依此，藉由結晶粒子表面微觀呈平滑，便可進行與施體基板間之接合。在此之同時，藉由在載台基板表面上形成於微細凹部相鄰接結晶粒子間所殘留的微構造，便在該凹部填充接合層、接著劑，可期待強力的錨釘效應，俾可防止因熱膨脹差造成的龜裂、剝離。
1‧‧‧基材
2‧‧‧經研磨過結晶粒子
2a‧‧‧露出面
3‧‧‧結晶粒子
4‧‧‧微細粒子
5、12a、15‧‧‧表面
6、6A、6B‧‧‧凹部
6b‧‧‧角部
11‧‧‧載台基板
12‧‧‧坯料基板
12b‧‧‧底面
16‧‧‧接合層
17‧‧‧施體基板
圖1(a)係多結晶材料的加工程序圖，圖1(b)係本發明載台 基板的表面狀態示意圖。
圖2係本發明載台基板表面的照片。
圖3(a)係由多結晶材料構成的坯料基板12(blank substrate)，圖3(b)係坯料基板12經精密研磨加工而獲得的基材1，圖3(c)係對基材1更進一步施行研磨加工而獲得的載台基板11，圖3(d)係在載台基板11上經由接合層16接合施體基板17而獲得的複合基板20A，圖3(e)係在載台基板11上直接接合施體基板17而獲得的複合基板20B。
圖4(a)係在載台基板11上經由接合層16接合施體基板17而獲得複合基板20A的微構造示意圖，圖4(b)係在載台基板11上直接接合施體基板17而獲得複合基板20B的微構造示意圖。
圖5(a)、(b)、(c)分別係凹部的平面形狀例示圖。
圖6係在載台基板表面上所形成凹部的深度分佈圖。
圖7係在載台基板表面上所形成凹部的直徑分佈圖。
以下，參照適當圖式，針對本發明進行更進一步說明。
首先，如圖3(a)所示，準備由多結晶材料構成的坯料基板12。坯料基板12的表面12a、底面12b係可為研削面，且亦可為煅燒面(向火面)(as fire furnace)。
多結晶材料係具有由多數微細粒子相黏結的微構造。多結晶材料係如圖1(a)所示，藉由結晶粒子3呈隨機配置而構成。藉由對坯料基板12的表面12a施行精密研磨加工， 各結晶粒子3便沿平面被切削，便在表面露出各自具有平坦面之經研磨過結晶粒子2。該經研磨過結晶粒子2表面係呈平滑。
此處，在基材1的表面5殘留的結晶粒子2間殘留有凹陷，此時在凹陷中殘留著大部分均被研磨而消失的微細粒子4。接著，當對該基材1的表面5追加施行精密研磨，而更加提升結晶粒子2露出面的中心線平均表面粗糙度Ra時，會使在該等晶界殘留的微細粒子4脫落，便成功地殘留凹部6(圖1(b)、圖3(c))。在基材1的表面5上所殘存各結晶的邊緣部分，因為粒子4較小而與其他結晶粒間之密接力較弱，因而利用追加研磨變可輕易除去。藉此，可在不用實施圖案化等程序之情況下，形成多數個表面凹部。又，藉由將素材的結晶粒徑設為15μm以上，便可輕易使結晶內部產生氣泡，俾可在研磨加工後的表面上形成凹部。
即，當藉由殘留結晶粒的除去而形成凹部時，可在結晶粒間的晶界上形成凹部。又，當利用結晶粒徑的控制而形成由氣泡衍生的凹部時，因為結晶粒內部具有氣泡，因而經研磨後的表面可在結晶粒子內形成凹部。
依此所獲得載台基板11，表面15的微觀中心線平均表面粗糙度Ra在5nm以下，從載台基板表面因結晶粒子4脫落而形成的凹部6，係沿相鄰接結晶粒子2的晶界形成。
圖1(b)示意圖所示表面的照片係如圖2所示。圖2的照片中，暗部分係表示粒子2的露出面2a，明亮細長線係表示晶界，圓凹陷係表示凹部6。
在獲得載台基板11後，便可對載台基板11的表 面15接合施體基板17。圖3(d)及圖4(a)的例中，在載台基板11的表面15上經由接合層16接合著施體基板17。此情況，因為載台基板11的表面微觀呈平滑，因而可提高與施體基板間之接合強度。又，得知因為接合層16的材質會進入凹部6內，而達一種錨釘效應，因而可抑制因載台基板與施體基板間之熱膨脹差而造成的剝離。
再者，圖3(e)及圖4(b)的例子，在載台基板11的表面15上直接接合著施體基板17。此情況，因為載台基板11的表面微觀呈平滑，因而可提高與施體基板間之接合強度。又，得知因為施體基板的材質會如17a般進入凹部6內，而達一種錨釘效應，因而可抑制因載台基板與施體基板間之熱膨脹差而造成的剝離。
以下，針對本發明各構成要件更進一步說明。
(半導體用複合基板)
本發明的複合基板係可利用於投影機、高頻裝置、高性能雷射、功率裝置等半導體，特別係半導體電路基板。
複合基板係包括有：本發明的載台基板、與施體基板。
施體基板的材質並無特別的限定，較佳係從由矽、氮化鋁、氮化鎵、氧化鋅及鑽石所構成群組中選擇。施體基板的厚度並無特別的限定，就從操作的關係而言，通常SEMI/JEIDA規格附近者較容易處置。
施體基板係具有上述材質，表面上亦可具有氧化膜。理由係若透過氧化膜施行離子植入，便可獲得抑制植入離子通道的效果。氧化膜較佳係具有50~500nm的厚度。具有氧 化膜的施體基板亦涵蓋於施體基板中，在無特別區分的前提下，統稱為「施體基板」。
(載台基板)
載台基板的厚度並無特別的限定，就從操作的關係而言，通常SEMI/JEIDA規格附近者較容易處置。
載台基板的材質係多結晶材料。多結晶材料並無特別的限定，較佳係從由氧化矽、氧化鋁、氮化鋁、碳化矽、氮化矽、矽鋁氮氧化物(Sialon)及氮化鎵所構成群組中選擇。
多結晶材料的結晶粒徑較佳係達5μm以上，藉此可輕易控制結晶粒子的脫落現象。若結晶粒徑過小，脫粒趨於明顯，導致凹部數變多，容易對爾後所形成半導體的特性造成影響。就從此點而言，多結晶材料的結晶粒徑更佳係達15μm以上。
再者，多結晶材料的結晶粒徑較佳係200μm以下，藉此可抑制凹部直徑變為過大。
再者，構成載台基板的多結晶材料之相對密度，就從對半導體後處理的耐久性及防污染的觀點，較佳係98%以上、更佳係99%以上。
(透光性氧化鋁陶瓷)
多結晶材料特別較佳係使用透光性氧化鋁陶瓷。理由係因為能獲得非常緻密的燒結體，因而即便凹部形成部分有發生應力集中，但載台基板仍不易發生斷裂、龜裂。
透光性氧化鋁基板的成形方法並無特別的限定，可為摻合刮刀法、擠出法、鑄膠法(gel casting method)等任意 方法。特別較佳係使用鑄膠法製造基板。較佳的實施形態係將含有陶瓷粉末、分散媒及膠化劑的漿料施行注模，藉由使該漿料膠化而獲得成形體，再使該成形體燒結。
特別較佳係使用相對於純度99.9%以上(較佳係99.95%以上)高純度氧化鋁粉末，經添加150~1000ppm助劑的原料。此種高純度氧化鋁粉末係可例示大明化學工業股份有限公司製的高純度氧化鋁粉體。
前述助劑較佳係氧化鎂，亦可例示如：ZrO2、Y2O3、La2O3、Sc2O3。
較佳實施形態中，透光性氧化鋁基板中除氧化鋁以外的雜質量係在0.2質量%以下，藉此可抑制半導性污染，因而對本發明特別具有有效。
原料粉末的平均粒徑(一次粒徑)並無特別的限定，就從低溫燒結的緻密化觀點，較佳係0.5μm以下、更佳係0.4μm以下。更佳的原料粉末平均粒徑係0.3μm以下。該平均粒徑的下限並無特別的限定。原料粉末的平均粒徑係可利用使用SEM(掃描式電子顯微鏡)進行的原料粉末直接觀察而決定。
另外，此處所謂「平均粒徑」係指SEM照片(倍率：X30000。任意2視野)上，除二次凝聚粒子外的1次粒子之(最長軸長+最短軸長)/2值的n=500平均值。
鑄膠法係可例示如以下方法。
(1)將無機物粉體、與成為膠化劑的聚乙烯醇、環氧樹脂、酚樹脂等的預聚物，一起與分散劑分散於分散媒中而調製漿料，經注模後，利用交聯劑進行三次元交聯而使膠化，便使漿 料固化。
(2)藉由使具有反應性官能基的有機分散媒、與膠化劑進行化學鍵結而使漿料固化。
(載台基板表面的微構造)
本發明中，載台基板表面的微觀中心線平均表面粗糙度Ra係在5nm以下。若大於此數值，會因分子間作用力，導致施體基板的接合強度降低。就從本發明的觀點，此數值較佳係在3nm以下、更佳係在1nm以下。另外，此數值係針對表面所露出的各結晶粒子2(參照圖1(b))露出面2a，利用原子力電子顯微鏡拍攝，並依如後述計算出的數值。
本發明係利用從載台基板表面的結晶粒子脫落而形成凹部。在形成多結晶材料的結晶粒子2露出於表面的露出面2a間會露出晶界，凹部6便生成於該晶界處。所以，凹部6不會對微觀中心線平均表面粗糙度Ra有直接影響。
載台基板表面的凹部6直徑較佳係凹部個數達95%以上分佈於10μm以下、更佳係分佈於8μm以下。當凹部個數的5%以上分佈於直徑大於10μm的情況，表面的Ra值惡化趨於明顯，會成為導致利用分子間作用力所造成接合強度降低的要因。
但，載台基板接合面的凹部直徑分佈係利用1000倍雷射顯微鏡實施。具體而言，將能涵蓋全體凹部的最小圓之直徑設為凹部直徑。測定視野係設為200μm×200μm，測定該視野中所含凹部的直徑並判定。當單一視野中所含凹部數較少的情況，便觀察複數視野，使所測定的凹部總數成為100以上。
再者，載台基板接合面的凹部直徑平均值較佳係在5μm以下、更佳係在3μm以下。但，載台基板接合面的凹部直徑平均值係首先依如上述測定分佈後，再計算直徑的平均值。
依如上述，藉由縮小載台基板接合面的凹部直徑，便可抑制對施體基板的放熱特性、與載台基板的絕緣性造成影響。
再者，載台基板接合面的凹部直徑，較佳係凹部個數的95%以上分佈於0.5μm以上。
再者，載台基板接合面的凹部直徑平均值較佳係1.0μm以上、更佳係1.5μm以上。
依此，藉由增加載台基板表面上的凹部直徑，抑制前述因熱膨脹差導致剝離的效果將更為明顯。又，若凹部直徑小於0.5μm，因為接著層不易有凹部形成，因而較難期待錨釘效應。
依此觀點，直徑0.5μm以上的凹部密度，就從利用錨釘效應增強密接力的觀點，表面面積每1cm2較佳係達50個以上、更佳係達200個以上。又，就從抑制因凹部過多導致熱傳導惡化等對半導體影響的觀點，直徑0.5μm以上的凹部密度係表面面積每1cm2較佳在4500個以下、更佳係2000個以下。
再者，載台基板表面的凹部深度較佳係凹部個數95%分佈於1μm以下、更佳係分佈於0.6μm以下。當凹部個數5%以上分佈於較深於1μm的情況，接著層較難深入至凹部內 部，因而會有導致熱傳導特性惡化的可能性。
但，載台基板接合面的凹部深度分佈係利用干涉儀(ZYGO公司製NewView7100、物鏡×50、變焦×1)實施。具體係將所觀察凹部的最深值設為該凹部的深度。測定視野係設為140μm×110μm，將該視野中所含凹部的深度設為Rt值測定(PV值測定)進行判定。當單一視野中所含凹部數較少的情況，便觀察複數視野，且使所測定凹部總數成為100以上。
再者，載台基板接合面的凹部深度平均值較佳係0.8μm以下、更佳係0.5μm以下。
依此藉由縮小載台基板表面的凹部深度，便可抑制凹部周邊因應力集中造成的載台基板強度劣化。
再者，載台基板表面的凹部深度較佳係凹部個數的95%以上達0.05μm以上。
再者，載台基板接合面的凹部深度平均值較佳係0.1μm以上、更佳係0.2μm以上。
依此藉由增加載台基板表面的凹部深度，便可使本發明效果更為明顯。
載台基板接合面的凹部依平面式觀看時的輪廓形狀，相較於有角的形狀之下，最好係以曲線為主體的形狀。即，載台基板接合面的凹部依平面式觀看時的輪廓形狀，較佳係由平滑曲線構成，最好不要有角部。
此處所謂「平滑曲線」係指數學性定義者。即，連續曲線通常具有尖銳點(尖點)，但將未具有此種尖銳點且全長均可微分的連續曲線稱為「平滑曲線」。換言之，將連續曲線上 的任意點均可微分的曲線稱為「可微分曲線」或「平滑曲線」。
當凹部的輪廓含有角部的情況，導致容易因角部的應力集中而發生龜裂等情形，會有牽連於基板強度劣化的可能性，但若凹部的輪廓係平滑曲線，便可抑制此種龜裂情形。
此種平滑曲線例特別較佳係圓形、橢圓形。
例如圖5(a)的例中，在表面15上所形成凹部6的輪廓6a係圓形或橢圓形。又，圖5(b)的例中，在表面15上所形成凹部6A的輪廓6a係平滑曲線，但成為不規則形。
圖5(c)的例中，在表面15上所形成凹部6B的輪廓6a係多角形(例如長方形)，具有角部6b。
具有如上述平滑曲線形狀輪廓的凹部，係藉由對研磨加工時所形成的脫粒面施行CMP加工便可獲得。
(載台基板之表面處理)
藉由對坯料基板12施行研磨加工，便可獲得本發明的載台基板表面。此種研磨加工係可例示如下。
首先，對坯料基板的表面利用GC(綠碳)施行研磨加工，而獲得基底加工面。接著，利用較大粒徑的鑽石磨粒施行研磨加工。此時，在鑽石研磨加工時利用粒徑1~6μm粒徑的鑽石磨粒施行中磨，便形成可任意凹部。對依此形成的中磨面使用膠態二氧化矽等施行修整加工，便可有效地形成微觀面粗糙度在5nm以下且表面具有凹部。
(接合形態)
再者，接合時所採用的技術並無特別的限定，例如利用表面活化進行的直接接合、或使用接著層進行的基板接合技術。
直接接合最好採用利用界面活化進行的低溫接合技術。在10-6Pa程度的真空狀態下，利用Ar氣體施行表面活化後，再於常溫下將Si等單晶材料經由SiO2等接著層便可接合於多結晶材料。
接著層例係除利用樹脂進行接著之外，尚可使用SiO2、Al2O3、SiN。當載台基板係高純度氧化鋁的情況，最好將Al2O3非晶膜使用為接著層。即，利用非晶層與多結晶層的熱膨脹係數差異，在載台基板上所形成非晶膜可期待提升利用錨釘效應產生的密接強度。又，因為非晶層的表面利用CMP加工便可獲得Ra<1nm程度的面，因而可期待在與高平坦性基板間利用分子間作用力產生的接合強度提升。此種非晶膜係可利用蒸鍍法、離子電鍍法、CVD法等公知成膜法形成。
實施例
為確認本發明效果，試製使用透光性氧化鋁陶瓷的載台基板11。
首先，製作透光性氧化鋁陶瓷製的坯料基板12。 具體係調製由以下成分混合的漿料。
(原料粉末)
‧比表面積3.5~4.5m2/g、平均一次粒徑0.35~0.45μm的α-氧化鋁粉末 100重量份
‧MgO(氧化鎂) 0.025重量份
‧ZrO2(二氧化鋯) 0.040重量份
‧Y2O3(氧化釔) 0.0015重量份
(分散媒)
‧戊二酸二甲酯 27重量份
‧乙二醇 0.3重量份
(膠化劑)
‧MDI樹脂 4重量份
(分散劑)
‧高分子界面活性劑 3重量份
(觸媒) ‧N,N-二甲胺基己醇 0.1重量份
將由上述混合物構成的漿料，在室溫下注模於鋁合金製模中之後，再於室溫下放置1小時。接著，在40℃下放置30分鐘，一邊進行固化一邊脫模。然後，在室溫下，接著分別於90℃下放置2小時，便獲得板狀粉末成形體。
所獲得粉末成形體在大氣中1100℃施行初步鍛燒(預煅燒)後，再於氫3：氮1的環境中依1700~1800℃施行煅燒，然後依相同條件實施退火處理，便獲得由多結晶材料構成的坯料基板12。又，當欲使氣泡明顯時，便將煅燒溫度設為1500~1700℃，且施行急速(1000℃/小時以上)升溫至1400℃~煅燒溫度，便使氣泡脫除變差，俾能在坯料材內部滯留較多氣泡。
對所製成的坯料基板12實施高精度研磨加工。首先，利用綠碳施行雙面研磨加工而修整形狀後，利用鑽石漿料對表面12a施行單面研磨加工。藉由將鑽石粒徑設為3μm，便可輕易地形成微細結晶粒子4及凹部6。為能獲得最終的面粗糙度，便使用膠態二氧化矽實施CMP研磨加工。藉此獲得具 有如圖1(b)及圖2所示表面形狀的載台基板11。
針對所獲得載台基板，測定微觀觀看表面15之各結晶粒表面時的中心線平均表面粗糙度Ra，結果未滿1nm。其中，測定係依如下述實施。
當微觀觀察各結晶粒表面的面粗糙度時，採取利用AFM(Atomic Force Microscope：原子力顯微鏡)進行10μm視野範圍的表面形狀觀察。
另一方面，當測定表面脫粒、與由氣泡衍生的表面凹凸形狀時，便採取利用AFM進行廣視野(>70μm視野範圍)表面形狀測定而測定Rt值(PV值測定)。
再者，針對所獲得載台基板，經測定表面所存在直徑0.5μm以上凹部的密度，結果為500個/cm2。其中，測定係依如下述實施。
當測定表面所存在凹部的密度時，採取利用微分干涉型光學顯微鏡(500倍)與光纖照明從基板側面進行照明的觀察。觀察視野係設為500μm×500μm，將基板平面依等間隔分為3×3而成為9區域，針對每個區域測定1視野，並將結果平均而計算出。利用光纖照明進行的基板側面之照明，係能有效使基板表面上所形成微細凹部呈明顯。
再者，基板表面的凹部密度係藉由變更中磨時所使用鑽石漿的粒徑亦可控制。例如藉由將鑽石漿的粒徑設為1μm，確認到可明顯使凹部的密度產生1000個/cm2。
再者，針對所獲得載台基板，經測定接合面所存在凹部的深度，結果在100nm程度有存在尖峰。其中，測定係 採用利用干涉儀(140μm×110μm視野)進行的Rt值測定(PV值測定)。
該凹部的深度分佈係如圖6所示。結果，凹部個數95%的深度係分佈於0.05μm以上，且分佈於1.0μm以下。又，凹部的深度平均值係0.3μm。
再者，該等凹部的外形輪廓係圓形或橢圓形。該凹部的直徑分佈係如圖7所示。結果，凹部個數95%的直徑分佈於0.5μm以上，且分佈於10μm以下。又，凹部的直徑平均值係2.5μm。
在所獲得載台基板的表面上，形成當作與Si薄板(施體基板)間之接著層用的SiO2層。製膜方法係使用電漿CVD，藉由於製膜後實施CMP研磨(化學機械研磨)，便將最終的SiO2層膜厚形成100nm。然後，利用電漿活化法將Si薄板(施體基板)與SiO2層直接接合，便試製得由Si-SiO2-載台基板構成的複合基板。然後，藉由對Si層施行研磨加工而實施薄板加工，便將Si層的厚度形成500nm。
所獲得複合基板依1000℃施行30分鐘的熱處理，結果確認到接合狀態並無變化，龜裂、剝離等情況發生少，能獲得利用所形成微細孔洞造成的充分錨釘效應。
(實施例2~10)
製作與實施例1同樣地經調整凹部大小、深度、密度的複合基板，並評價。結果如表1、表2所示
(比較例)
為比較沒有凹凸的基板之貼合強度，載台基板係製作在 Si基板上直接接合著當作功能層用之LT(鉭酸鋰)的複合基板。LT表面係設為Ra：0.5nm、PV值：2nm、沒有物理性梯度差的表面。將該載台基板利用表面活化法直接接合於由Si構成的施體基板上而貼合，利用研磨加工形成20μm膜厚。所完成的基板經利用鑽石刀施行切斷加工，結果部分有觀察到從接合界面處的剝離現象。龜裂、剝離發生率係如表2所示。
1‧‧‧基材
2‧‧‧經研磨過結晶粒子
2a‧‧‧露出面
3‧‧‧結晶粒子
4‧‧‧微細粒子
5‧‧‧表面
6‧‧‧凹部
11‧‧‧載台基板
15‧‧‧表面

Claims (8)

  1. 一種載台基板，係半導體用複合基板的載台基板，其特徵在於：上述載台基板係由絕緣性多結晶材料形成，上述載台基板的研磨面的微觀中心線平均表面粗糙度Ra係在5nm以下，在上述研磨面上有形成凹部，上述凹部是藉由上述絕緣性多結晶材料的粒子的脫落而在晶界產生的凹部或是起因於上述絕緣性多結晶材料的內部的氣泡而出現在上述研磨面的凹部，平面式觀看上述載台基板的上述表面時，上述凹部的外側輪廓係圓形或橢圓形。
  2. 如申請專利範圍第1項之載台基板，其中，直徑0.5μm以上的凹部密度係上述表面每1cm2達50個以上、且4500個以下。
  3. 如申請專利範圍第1或2項之載台基板，其中，上述凹部的深度平均值係0.1μm以上、且0.8μm以下。
  4. 如申請專利範圍第1或2項之載台基板，其中，上述凹部的直徑平均值係1μm以上、且5μm以下。
  5. 如申請專利範圍第或2項之載台基板，其中，上述絕緣性多結晶材料係由氧化鋁、碳化矽、氮化鋁或氮化矽構成。
  6. 如申請專利範圍第5項之載台基板，其中，上述絕緣性多結晶材料係透光性氧化鋁陶瓷。
  7. 一種半導體用複合基板，其特徵在於具有：申請專利範圍第1至6項中任一項之載台基板；以及對上述載台基板的上述表面，直接或經由接合層進行接合 的施體基板。
  8. 如申請專利範圍第7項之半導體用複合基板，其中，上述接合層係由Al2O3構成。
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EP2930751B1 (en) 2018-08-01
CN104364905A (zh) 2015-02-18
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TW201508820A (zh) 2015-03-01
WO2014157734A1 (ja) 2014-10-02
JP5756888B2 (ja) 2015-07-29
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