TWI532161B - 發光結構 - Google Patents
發光結構 Download PDFInfo
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- TWI532161B TWI532161B TW103125629A TW103125629A TWI532161B TW I532161 B TWI532161 B TW I532161B TW 103125629 A TW103125629 A TW 103125629A TW 103125629 A TW103125629 A TW 103125629A TW I532161 B TWI532161 B TW I532161B
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- 239000000758 substrate Substances 0.000 claims description 18
- 239000010410 layer Substances 0.000 description 155
- 239000004065 semiconductor Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical class [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- -1 ITO Chemical class 0.000 description 1
- 229910010092 LiAlO2 Inorganic materials 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
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- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Description
本申請案係關於一種發光結構,尤關於一種發光結構具有至少二個發光單元及用以連接此些發光單元之電性連接。
發光二極體陣列係電性串聯或並聯數個發光二極體。二極體間係藉由溝槽或槽孔達成電性分離。為了連接彼此分離之二極體可以使用金屬線或薄膜跨越二極體間之溝槽。然而,由於溝槽之高深寬比(aspect ratio)使得金屬線或薄膜在製造過程中易於損壞。
本發明之一實施例係揭露一種發光結構,其至少包含一第一單元、一第二單元、一溝槽係介於第一單元及第二單元之間,並具有一第一側壁及一較該第一側壁陡峭之第二側壁;及一電性連接係設置於第一側壁之上。
本發明之另一實施例係揭露一種發光結構,其至少包含一第一單元、一第二單元、一溝槽係介於第一單元及第二單元之間、及一電性連接。此電性連接具有一連接部及一橋接部。橋接部係設置於溝槽上並較連接部寬。
本發明之又一實施例係揭露一種發光結構,其至少包含一第一單元、一第二單元、一溝槽係介於第一單元及第二單
元之間、一絕緣層設置於溝槽之上並暴露出溝槽附近之部分第一單元、及一電性連接係接觸此溝槽附近之部分第一單元與第二單元。
1‧‧‧發光結構單元
2‧‧‧發光結構單元
3‧‧‧發光結構單元
4‧‧‧發光結構單元
10A‧‧‧左發光結構單元
10B‧‧‧右發光結構單元
11A‧‧‧下方層
11B‧‧‧下方層
12A‧‧‧上方層
12B‧‧‧上方層
13A‧‧‧發光接面
13B‧‧‧發光接面
14A‧‧‧電流分散層
14B‧‧‧電流分散層
15‧‧‧溝槽
16‧‧‧第一絕緣層
17‧‧‧第二絕緣層
23‧‧‧溝槽
24‧‧‧發光結構單元
25‧‧‧發光結構單元
26‧‧‧發光結構單元
27‧‧‧下方層
28‧‧‧上方層
29‧‧‧平台區域
30‧‧‧共同基板
31‧‧‧發光區
41‧‧‧基板
42‧‧‧第一半導體層
43‧‧‧活性層
44‧‧‧第二半導體層
45‧‧‧凹部
46‧‧‧溝槽
47‧‧‧絕緣層
48‧‧‧導電結構
18‧‧‧電性連接
19‧‧‧保護層
20‧‧‧電流網路
21‧‧‧絕緣層
22a‧‧‧下方電性連接
22b‧‧‧上方電性連接
49a‧‧‧第一電極
49b‧‧‧第二電極
250‧‧‧第一電極電性連接
250a‧‧‧橋接部
250b‧‧‧連接部
第1圖係顯示依據本發明一實施例之剖面圖,繪示二個發光結構單元之連接。
第2圖係顯示依據本發明一實施例之發光結構單元之上視圖;第3圖係顯示依據本發明一實施例之溝槽填充示意圖;第4圖係顯示依據本發明一實施例之一位於溝槽上之電性連接之上視圖;第5圖係顯示依據本發明另一實施例之電性連接之上視圖,此電性連接係位於一介於二個發光結構單元間之溝槽上方;第6圖係顯示依據本發明一實施例之剖面圖,繪示發光結構單元間之連接;第7圖係顯示依據本發明一實施例之數個發光結構單元之剖面圖;第8A~8F圖係顯示依據本發明一實施例之發光結構單元之製造示意圖;及第9圖係顯示依據本發明一實施例之發光結構單元之剖面圖。
第1圖係顯示依據本發明一實施例之剖面圖,繪示二個發光結構單元之連接。左發光結構單元10A及右發光結構單元10B分別包含一下方層(11A、11B)、一上方層(12A、12B)、一位於下方層(11A、11B)及上方層(12A、12B)間之發光接面(13A、13B)、及一電流分散層(14A、14B)。上述各層係利用磊晶生長或接合技術依序形成於一基板(未顯示)上,其中結合技術係如金屬接合、擴散接合、膠體結合等。
左發光結構單元10A與右發光結構單元10B可以被一共同基板或彼此獨立之基板所支撐,且為溝槽15電性分離。例如,發光結構單元10A及10B可以共同地形成於單一塊狀基板之上,塊狀基板係如藍寶石、GaAs、Si、金屬、玻璃、或PCB。或者各個發光結構單元係形成於彼此獨立之塊狀基板之上,塊狀基板之材料係如前所述。然而,利用機械器具、有機材料、金屬材料、或前述選項之結合,各個塊狀基板可以再整合在一起。溝槽15係可以達到、進入、或穿過基板或發光結構單元間之任何層。溝槽15之剖面包含至少一個導角及/或至少一個切角。導角及/或切角可以形成在單層或多層上。例如,如圖所示,導角及/或切角可以形成在下方層11A及/或下方層11B上。然而,導角及/或切角也可以形成在上方層及下方層二者上。導角之半徑R以不小於1μm為佳。切角可以具有相同或相異之斜角長度Lbevel。
再者,溝槽之側壁係自下方層之底面起呈現大於80度之傾斜。例如,如圖所示,側壁與下方層之底面間之夾角θ係小於80度、70度、60度、50度、或40度。夾角θ亦可以落於特定範圍內,如80度~70度、70度~60度、60度~40度。此外,溝槽之複數側壁可以具有相近或不同之傾斜角度。例如,一個側壁
之傾斜角度係介於50度~40度,而另一個側壁之傾斜角度係介於60度~50度。若一或多個側壁呈現傾斜狀態,溝槽會形成一梯形剖面,此梯形具有一高度、一長邊、及一平行於長邊之短邊。此高度係接近下方層之厚度或下方層與上方層之總厚度。例如,高度係介於1μm~10μm、長邊之長度係介於3μm~100μm、短邊之長度係介於1μm~40μm、長邊與短邊之比例係介於3:1~1.5:1。具體而言,高度係介於4μm~9μm、長邊之長度係介於5μm~40μm、短邊之長度係介於2.5μm~20μm。
為了在發光結構單元間建立電通道,可使一電性連接18跨越溝槽15並電性連接下方層11A、下方層11B、上方層12A、及上方層12B中分屬不同單元之任意兩層。例如,發光結構單元間可藉由跨接下方層11A及上方層12B形成串聯,或者,發光結構單元間可藉由跨接上方層12A及上方層12B形成並聯。
為了避免電性連接18與其他層接觸,可以提供一第一絕緣層16於溝槽15及接近溝槽開口附近之部分區域,如下方層11A及/或下方層11B之側壁、溝槽15之邊緣、上方層12A及/或上方層12B之側壁、上方層12A及/或上方層12B之上表面、及/或電流分散層14A及/或電流分散層14B之下表面。此外,一第二絕緣層17更可以選擇性地形成於第一絕緣層16及電性連接18之間。第二絕緣層17可以用以填充第一絕緣層16及電性連接18間之空區域、填充第一絕緣層16上之空隙、平坦化第一絕緣層16之外表面、填充溝槽15、形成一用以放置電性連接18之平面、覆蓋未被第一絕緣層16遮蔽之區域、強化ESD保護、及/或支撐電性連接18。
第一絕緣層16可以具有銳角邊緣,而設置於第一絕
緣層16上之層因此可以平順地覆蓋位於第一絕緣層16邊緣上之落差。此邊緣上之斜度可以減緩應力集中於落差上方之疊層。此銳角可以小於90度、80度、70度、60度、或50度。除第一絕緣層16外,第二絕緣層17亦可以具有銳角之邊緣。
再者,為保護電性連接18被氧化、腐蝕、及/或損傷,可以形成保護層19於電性連接18上。保護層19不僅可以覆蓋電性連接18之外表面更可以覆蓋外表面以外之區域。具體而言,保護層19可以形成在第二絕緣層17、電流分散層14A、電流分散層14B、上方層12A、上方層12B、下方層11A及/或下方層11B之任一面上。
第2圖係顯示依據本發明一實施例之發光結構單元之上視圖。圖式中,四個矩形發光結構單元1、2、3、4係以2x2陣列方式排列。然而,發光結構單元之形狀、數量、及配置僅為例示,並不限制本發明之實施及變化。
發光結構單元1、2、3、4係被溝槽15在側向分開。電性連接18可以由一發光結構單元(如:發光結構單元3)跨越溝槽15連接至另一發光結構單元(如:發光結構單元4),並將此二個單元間形成串聯或並聯。如斷面AA’所示,其上未形成電性連接18之溝槽15(例如,介於發光結構單元1及4之間)具有較陡峭之側壁,因此,在溝槽15旁的發光結構單元存在較多的體積。相反地,如斷面BB’所示,其上形成有電性連接18之溝槽15(例如,介於發光結構單元3及4之間)與斷面AA’之側壁相較具有較不陡峭之側壁。於一實施例中,部分發光結構單元係被移除以形成具有階梯狀及/或傾斜側壁之溝槽。換言之,此溝槽具有倒梯形或擬似倒梯形之斷面。例如,形成溝槽之方法可以選用
濕蝕刻、乾蝕刻、雷射加工、鑽石切割、及前述方式之任意組合。一般而言,側壁越陡峭,加工時間越短。
此外,較不陡峭之側壁可以形成在全部長度之溝槽Lfull或部分長度之溝槽Lpartial上(如第2圖所示)。全部長度之溝槽Lfull在此處之定義係溝槽之長度接近發光結構單元之寬度;部分長度之溝槽Lpartial之定義係溝槽長度小於發光結構單元之寬度。例如,Lpartial係介於10μm~100μm、發光結構單元之寬度係介於100μm~1000μm、Lpartial與發光結構單元寬度之比例係介於1:2~1:10。
再者,電性連接18更可以與一電流網路20相連接。透過電流網路20電流可以由遠離電性連接18之處流入或流向遠離電性連接18之處,如第2圖所示。
第3圖係顯示依據本發明一實施例之溝槽填充示意圖。於步驟(1)中,絕緣層21及下方電性連接22a係依序提供予形成於二個發光結構單元24、25間之溝槽23之上。絕緣層21可以隔離下方電性連接22a使其不與發光結構單元24、25接觸。下方電性連接22a可以電性連接二個發光結構單元24、25。下方電性連接22a可以藉由沈積及蝕刻工法形成。由於溝槽23在一個斷面上呈現漸縮(tapered)之狀態,下方電性連接22a之傾斜部分通常比平坦部分薄,也因此容易在後續製程中遭到損壞。為了強化下方電性連接22a之傾斜部分,於下方電性連接22a之上再提供一上方電性連接22b。上方電性連接22b尤以提供在傾斜部分上方或溝槽23內部為佳,如步驟(2)所示。
第4圖係顯示依據本發明一實施例之一位於溝槽上
之電性連接之上視圖。電性連接250具有位於溝槽23上方之橋接部250a與二個連接部250b。各連接部250b係與發光結構單元26之正極或負極電性相連。橋接部250a具有BB斷面;連接部250b具有AA斷面。BB斷面之寬度係大於AA斷面,但是為了使流經斷面之電流維持恆定或平穩,兩個斷面具有相同或接近之面積。例如,橋接部250a之寬度係介於5μm~50μm;連接部250b之寬度係介於3μm~15μm;其二者之厚度係接近8μm。然而,依據使用者的需求或實際的製程,此二個斷面也可以有不同的面積。橋接部250a可以在基本的電性連接製程之後再形成。例如,可以先在溝槽23及發光結構單元26之特定區域上沈積金屬,將電性連接250形成在具有傾斜側壁之溝槽23之上。但是,沈積在溝槽23之傾斜側壁上之金屬通常比沈積在發光結構單元26上之金屬薄,而使得橫跨二個發光結構單元之沈積金屬具有數個斷面面積。為了增加溝槽23上金屬的體積或斷面面積,利用額外的沈積步驟在較薄的金屬沈積區域上形成前述的橋接部250a。然而,溝槽23上的電性連接250的體積或斷面面積也可以利用其他方式增加,例如,將一或多個補助物件接合在較薄的電性連接部分,以及沈積其他材料。補助物件係如金屬、陶瓷等。此外,較厚的電性連接部分更可以減薄至與溝槽23上方部分之厚度相近的水準。
第5圖係顯示依據本發明另一實施例之電性連接250之上視圖,此電性連接250係位於一介於二個發光結構單元間之溝槽23上方。各個發光結構單元26包括下方層27及上方層28。上方層28之面積小於下方層27。下方層27具有一環繞上方層28之平台區域29。發光結構單元26可以自位於上方層28中或介於上方層28與下方層27間之發光層中發射光線。若發光層係位於
上方層28之中,上方層28可以包括p型半導體層與n型半導體層,而發光層係位於此p型及n型半導體層之間。下方層27可以包括用以承載上方層28之載體。上方層28可藉由磊晶方式形成於下方層27之上,或者藉由膠體接合、金屬接合、擴散接合、或共熔接合(eutectic bonding)之方式與下方層27相結合。若發光層係位於上方層28與下方層27之間,上方層28與下方層27中之一者可以包括p型半導體層,而另一者則可以包括n型半導體層。
為了於發光結構單元間建立電流通道,一電性連接250係提供在二個發光結構單元26上。如圖所示,電性連接250之一端係設置於上方層28上,另一端係設置於下方層27上。然而,電性連接250之兩端也可以設置於二個上方層28或二個下方層27之上。電性連接250可以利用金屬、半導體、金屬氧化物、或前述材料之任意組合進行建構。若電性連接250係使用較金屬有更高透明度之金屬氧化物,被電性連接250遮擋之出光區域會更少。金屬氧化物係如ITO、IZO、及CTO。
第6圖係顯示依據本發明一實施例之剖面圖,繪示發光結構單元間之連接。各個發光結構單元26包括上方層28及下方層27。上方層28及下方層27係利用磊晶成長方式及/或結合技術形成於共同基板30之上。結合技術包括但不限於金屬接合、共熔接合、膠體結合、及擴散接合。一發光區31係位於上方層28及下方層27之間。當施加一偏壓於上方層28與下方層27時,發光區31可以產生光。發光區31之光係等向性地發射。
二個發光結構單元26係被溝槽23分開。若二個發光結構單元26係彼此串聯,絕緣層21係形成在溝槽23上以使得電性連接250接觸一發光結構單元26之上方層28及另一發光結構
單元26之下方層27。於一實施例中,絕緣層21不僅暴露出下方層27之上表面更暴露出下方層27之部分側壁。下方層27暴露之側壁可以增加電性連接250與下方層27間之接觸面積,也因此可以降低電流密度。
第7圖係顯示依據本發明一實施例之數個發光結構單元之剖面圖。數個發光結構單元26係被基板30支撐。二個相鄰之發光結構單元26被溝槽23分隔。於本實施例中,溝槽23係呈現梯形,具有較窄之上方開口與較寬之底面。靠近溝槽23之發光結構單元26因此具有大於90度之底切(undercut)側壁,如圖所示。換言之,發光結構單元26具有倒梯形之外觀。若發光結構單元26可以由倒梯形之中間部、中心部、或上部發光,藉由底切側壁可以使得往下移動之光線離開發光結構單元26。梯形溝槽可以藉由蝕刻方式形成。
依據本發明之一實施例,發光結構單元可以至少包括一第一電性層(例如,上方層)、一轉換單元(例如,發光區)、及一第二電性層(例如,下方層)。各個第一電性層及第二電性層具有一單層或多層之群組(多層係指二或更多層)。二個分別位於第一電性層及第二電性層上之單層或多層之群組具有不同之極性或不同之摻雜物。例如,第一電性層係p型半導體層,第二電性層係n型半導體層。設置於第一電性層與第二電性層間之轉換單元係光能與電能可以被轉換或被誘發轉換之區域。電能可轉換為光能者係如發光二極體、液晶顯示器、與有機二極體。光能可被轉換為電能者係如太陽能電池、及光電二極體。
就發光二極體而言,轉換後光之發光頻譜可以藉由改變發光二極體中一層或多層之物理或化學配置進行調整。發光
二極體之組成材料係如磷化鋁鎵銦(AlGaInP)系列、氮化鋁鎵銦(AlGaInN)系列、氧化鋅(ZnO)系列等。轉換單元之結構係如:單異質結構(single heterostructure;SH)、雙異質結構(double heterostructure;DH)、雙側雙異質結構(double-side double heterostructure;DDH)、或多層量子井(multi-quantum well;MQW)。再者,調整量子井之對數亦可以改變發光波長。
基板係用以成長或承載發光結構單元,適用之材料係包含但不限於鍺(Ge)、砷化鎵(GaAs)、銦化磷(InP)、藍寶石(Sapphire)、碳化矽(SiC)、矽(Si)、鋁酸鋰(LiAlO2)、氧化鋅(ZnO)、氮化鎵(GaN)、氮化鋁(AlN)、玻璃、鑽石、CVD鑽石、與類鑽碳(Diamond-Like Carbon;DLC)等。此外,基板亦可為複合材料、或不同材料之組合。
第8A~8F圖係顯示依據本發明一實施例之發光結構單元之製造示意圖。首先,參考第8圖,提供基板41。基板41之材料可以為矽、碳化矽、藍寶石、砷化物、磷化物、氧化鋅、及氧化鎂。然後,在基板41上形成第一半導體層42、活性層43、及第二半導體層44。第一半導體層42係第一電性之磊晶層。第二半導體層44係第二電性之磊晶層。第一半導體層42與第二半導體層44之材料包括但不限於含銦之氮化物半導體、含鋁之氮化物半導體、及含鎵之氮化物半導體。活性層43之材料包括但不限於氮化銦鎵、磷化鋁鎵銦、氮化鋁鎵、砷化鋁鎵、及砷化銦鎵。
參考第8B~8D圖,實施一多階式圖案化製程。首先,定義第二半導體層44之第一區域,再藉由微影及蝕刻技術在第二半導體層44上形成凹部45。然後,如第8C圖所示,實施第二蝕刻製程以去除第二半導體層44之部分與活性層43之部分直至第
一半導體層42暴露出一表面。最後,如第8D圖所示,實施第三圖案化製程,利用微影及蝕刻技術形成溝槽46以劃分第一半導體層42。透過此多階式圖案化製程,發光二極體結構係被階梯狀側壁分開,如第8D圖所示。
參考第8E圖,再形成一絕緣層47於二個分開之發光二極體結構40之間以覆蓋相鄰發光二極體結構之階梯狀側壁。其中,絕緣層47係由介電材料所構成,介電材料係如氮化矽、氧化矽、氧化鋁、及前述材料之組合。然後,如第8F圖所示,形成一導電結構48於絕緣結構47之上以使左側發光二極體結構之第一半導體層42及右側發光二極體結構之第二半導體層43電性串聯。此外,第一電極49a及第二電極49b可以形成在與導電結構48相同或不同之製程中。
除了上述的圖案化製程,階梯狀側壁也可以利用灰階光罩(gray tone mask)或半色階光罩(half tone mask)形成。利用存在於單一光罩上的不同開孔率,階梯狀側壁也可以在一次曝光中形成。
參考第9圖,透過此階梯狀側壁結構,不同入射角之光線(如箭頭所指)因為可以經由不同角度離開發光二極體之側壁而更容易被摘出。所以發光二極體結構之光摘出效率可以得到提昇。此外,由於階梯狀側壁的平緩坡度,覆蓋於發光二極體上之絕緣層與導電結構之輪廓可以更加均勻。
以上各圖式與說明雖僅分別對應特定實施例,然而,各個實施例中所說明或揭露之元件、實施方式、設計準則、及技術原理除在彼此顯相衝突、矛盾、或難以共同實施之外,吾
人當可依其所需任意參照、交換、搭配、協調、或合併。
雖然本發明已說明如上,然其並非用以限制本發明之範圍、實施順序、或使用之材料與製程方法。對於本發明所作之各種修飾與變更,皆不脫本發明之精神與範圍。
23‧‧‧溝槽
250‧‧‧電性連接
250a‧‧‧橋接部
250b‧‧‧連接部
26‧‧‧發光結構單元
Claims (11)
- 一種發光結構,包含:一第一單元;一第二單元,與該第一單元電性分離;一溝槽係介於該第一單元及該第二單元之間;以及一電性連接係覆蓋於該第一單元、該第二單元以及該溝槽之上,其中由上視圖觀之該電性連接具有一連接部及一寬度大於該連接部之橋接部,該橋接部覆蓋該溝槽。
- 如申請範圍1所述發光結構,其中該連接部及該橋接部具有相同或接近之斷面面積。
- 如申請範圍1所述發光結構,其中該連接部及該橋接部具有接近之厚度。
- 如申請範圍1所述發光結構,其中該連接部電性連接於一正極或一負極。
- 如申請範圍1所述發光結構,其中該橋接部之厚度小於該連接部之厚度。
- 一種發光結構,包含:一第一單元,包含一第一上方層及一具有一第一上表面及一第一側壁之第一下方層;一第二單元,包含一具有一第二上表面之第二上方層及一具有一第二側壁之第二下方層;一溝槽係介於該第一單元及該第二單元之間;一絕緣層設置於該構槽,暴露出部分之該第一側壁且覆蓋該第二上表面,以及一電性連接,係接觸且覆蓋於該暴露之該第一側壁及覆蓋 該第二上表面以電性連接該第一單元及該第二單元。
- 如申請範圍6所述發光結構,其中該絕緣層暴露該第一上表面,該電性連接接觸該第一上表面。
- 如申請範圍6所述之發光結構,其中該電性連接與該第二側壁為絕緣。
- 如申請範圍6所述之發光結構,其中該電性連接與該第一單元之接觸面積大於該電性連接與該第二單元之接觸面積。
- 如申請範圍6所述之發光結構,更包含一基板位於該第一單元與該第二單元下。
- 如申請範圍6所述之發光結構,其中該電性連接設置於該溝槽上。
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US9196605B2 (en) | 2015-11-24 |
KR20180100036A (ko) | 2018-09-06 |
TWI453908B (zh) | 2014-09-21 |
KR101741035B1 (ko) | 2017-05-29 |
CN102403330A (zh) | 2012-04-04 |
KR20160100897A (ko) | 2016-08-24 |
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CN105552069B (zh) | 2019-02-15 |
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US10950652B2 (en) | 2021-03-16 |
US20230187473A1 (en) | 2023-06-15 |
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US11594573B2 (en) | 2023-02-28 |
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TW201448191A (zh) | 2014-12-16 |
CN105552069A (zh) | 2016-05-04 |
US20210183942A1 (en) | 2021-06-17 |
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KR20160052494A (ko) | 2016-05-12 |
CN110085576A (zh) | 2019-08-02 |
CN102403330B (zh) | 2016-04-06 |
US20160049442A1 (en) | 2016-02-18 |
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