TWI531250B - Flat plane speaker - Google Patents

Flat plane speaker Download PDF

Info

Publication number
TWI531250B
TWI531250B TW098118139A TW98118139A TWI531250B TW I531250 B TWI531250 B TW I531250B TW 098118139 A TW098118139 A TW 098118139A TW 98118139 A TW98118139 A TW 98118139A TW I531250 B TWI531250 B TW I531250B
Authority
TW
Taiwan
Prior art keywords
carbon nanotube
electrode
flat panel
panel speaker
piezoelectric element
Prior art date
Application number
TW098118139A
Other languages
Chinese (zh)
Other versions
TW201044887A (en
Inventor
姜開利
劉亮
馮辰
潛力
范守善
Original Assignee
鴻海精密工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 鴻海精密工業股份有限公司 filed Critical 鴻海精密工業股份有限公司
Priority to TW098118139A priority Critical patent/TWI531250B/en
Publication of TW201044887A publication Critical patent/TW201044887A/en
Application granted granted Critical
Publication of TWI531250B publication Critical patent/TWI531250B/en

Links

Description

平板揚聲器 Flat speaker

本發明涉及一種平板揚聲器,尤其涉及一種壓電式平板揚聲器。 The present invention relates to a flat panel speaker, and more particularly to a piezoelectric flat panel speaker.

壓電平板揚聲器之工作原理係基於某些壓電材料之逆壓電效應。即,當對壓電材料施加一交變電場,該壓電材料便相應發生機械變形,從而推動周圍空氣振動發聲。 The working principle of piezoelectric flat panel loudspeakers is based on the inverse piezoelectric effect of certain piezoelectric materials. That is, when an alternating electric field is applied to the piezoelectric material, the piezoelectric material undergoes mechanical deformation correspondingly, thereby urging the surrounding air to vibrate.

先前技術中之壓電平板揚聲器之基本結構一般包括壓電元件及與該壓電元件電連接並間隔設置之第一電極和第二電極。為保證該壓電揚聲器在工作過程中第一電極和第二電極與壓電元件具有良好之電連接性能,一般採用印刷工藝在所述壓電元件上製備金屬膜作為第一及第二電極。然在壓電平板揚聲器工作之過程中,壓電元件會發生機械變形,而由金屬材料製成之電極抗疲勞性能較差,故在工作過程中容易受到壓電元件之振動影響而發生疲勞斷裂。 The basic structure of a piezoelectric flat panel speaker of the prior art generally includes a piezoelectric element and first and second electrodes electrically connected to and spaced apart from the piezoelectric element. In order to ensure good electrical connection performance between the first electrode and the second electrode and the piezoelectric element during operation of the piezoelectric speaker, a metal film is generally prepared as the first and second electrodes on the piezoelectric element by a printing process. However, during the operation of the piezoelectric flat panel speaker, the piezoelectric element is mechanically deformed, and the electrode made of the metal material has poor fatigue resistance, so that it is susceptible to fatigue fracture due to the vibration of the piezoelectric element during operation.

另,先前技術中之壓電平板揚聲器也採用具有導電特性之銦錫氧化物(Indium Tin Oxide,ITO)層(下稱ITO層)作為壓電平板揚聲器之電極,從而製備透明的壓電平板揚聲器。然,用ITO作為電極也存在不耐彎折,抗疲勞性能較差,容易受壓電元件之振動影響而發生疲勞斷裂之缺點,同時,ITO層需要在高溫真空之環境下沈積在壓電元件之表面上,由於壓電元件本身不耐高溫,故該 ITO電極之形成過程容易導致壓電元件之壓電性能下降。 In addition, the piezoelectric flat panel speaker of the prior art also uses an indium tin oxide (ITO) layer (hereinafter referred to as an ITO layer) having a conductive property as an electrode of a piezoelectric flat panel speaker, thereby preparing a transparent piezoelectric flat panel speaker. . However, the use of ITO as an electrode also has the disadvantage of being inflexible, has poor fatigue resistance, and is susceptible to fatigue fracture due to the vibration of the piezoelectric element. At the same time, the ITO layer needs to be deposited on the piezoelectric element in a high-temperature vacuum environment. On the surface, since the piezoelectric element itself is not resistant to high temperatures, The formation process of the ITO electrode easily causes the piezoelectric property of the piezoelectric element to deteriorate.

2007年4月12日公開之US20070081681A1號美國專利申請揭示一種壓電平板揚聲器,該壓電平板揚聲器採用奈米碳管膜作為電極,該壓電平板揚聲器之形成方式為將含有奈米碳管之溶液通過塗敷之方式形成於壓電元件之兩個表面,之後再在50℃~70℃之條件下將溶劑蒸發掉,該奈米碳管膜不需要在高溫條件下與壓電元件結合,故其製備過程不會影響壓電元件之壓電性能。然,通過上述方法形成之奈米碳管膜中,奈米碳管為無序排列,不利於發揮奈米碳管優異之縱向導電性,故影響了整個壓電平板揚聲器之响應速度。 US Patent Application No. US20070081681A1, issued Apr. 12, 2007, discloses a piezoelectric flat panel speaker using a carbon nanotube film as an electrode, which is formed by containing a carbon nanotube The solution is formed on both surfaces of the piezoelectric element by coating, and then the solvent is evaporated at 50 ° C to 70 ° C. The carbon nanotube film does not need to be combined with the piezoelectric element under high temperature conditions. Therefore, the preparation process does not affect the piezoelectric properties of the piezoelectric element. However, in the carbon nanotube film formed by the above method, the carbon nanotubes are disorderly arranged, which is disadvantageous for exerting the excellent longitudinal conductivity of the carbon nanotube, thereby affecting the response speed of the entire piezoelectric flat panel speaker.

有鑒於此,提供一種具有較快响應速度之平板揚聲器實為必要。 In view of this, it is necessary to provide a flat panel speaker with a relatively fast response speed.

一種平板揚聲器,該平板揚聲器包括:一壓電元件,該壓電元件包括一第一表面和與該第一表面相對之一第二表面;一第一電極,該第一電極與所述壓電元件電連接且設置於其第一表面;一第二電極,該第二電極與所述壓電元件電連接且設置於所述壓電元件之第二表面;其中,所述第一電極和第二電極均為一奈米碳管結構,該奈米碳管結構包括複數個基本沿同一個方向排列之奈米碳管。 A flat panel speaker comprising: a piezoelectric element including a first surface and a second surface opposite the first surface; a first electrode, the first electrode and the piezoelectric The element is electrically connected and disposed on the first surface thereof; a second electrode electrically connected to the piezoelectric element and disposed on the second surface of the piezoelectric element; wherein the first electrode and the first electrode The two electrodes are all a carbon nanotube structure, and the carbon nanotube structure comprises a plurality of carbon nanotubes arranged substantially in the same direction.

一種平板揚聲器,該平板揚聲器包括:一壓電元件,該壓電元件包括一第一表面和與該第一表面相對之一第二表面;一第一電極,該第一電極與所述壓電元件電連接且設置於其第一表面;一第二電極,該第二電極與所述壓電元件電連接且設置於所述壓電元件之第二表面;一振膜,所述振膜設置於所述第一電極或第二電 極之表面;其中,所述第一電極和第二電極為一奈米碳管結構,該奈米碳管結構包括複數個基本沿同一個方向排列之奈米碳管。 A flat panel speaker comprising: a piezoelectric element including a first surface and a second surface opposite the first surface; a first electrode, the first electrode and the piezoelectric The element is electrically connected and disposed on the first surface thereof; a second electrode electrically connected to the piezoelectric element and disposed on the second surface of the piezoelectric element; a diaphragm, the diaphragm is disposed On the first electrode or the second electricity a surface of the pole; wherein the first electrode and the second electrode are a carbon nanotube structure, and the carbon nanotube structure comprises a plurality of carbon nanotubes arranged substantially in the same direction.

相較於先前技術,本發明所提供之平板揚聲器具有以下優點:所述平板揚聲器採用奈米碳管結構作為第一電極和第二電極,且該奈米碳管結構包括複數個基本沿同一方向排列之奈米碳管,其導電性較好,故整個平板揚聲器具有較好之靈敏度和穩定性。 Compared with the prior art, the flat panel speaker provided by the present invention has the following advantages: the flat panel speaker adopts a carbon nanotube structure as a first electrode and a second electrode, and the carbon nanotube structure includes a plurality of substantially the same direction The aligned carbon nanotubes have good electrical conductivity, so the entire flat panel speaker has better sensitivity and stability.

10,20‧‧‧平板揚聲器 10,20‧‧‧ flat speaker

111,145‧‧‧奈米碳管 111,145‧‧‧Nano carbon tube

112‧‧‧導電金屬層 112‧‧‧ Conductive metal layer

1121‧‧‧浸潤層 1121‧‧‧Infiltration layer

1122‧‧‧導電層 1122‧‧‧ Conductive layer

12,22‧‧‧第一電極 12,22‧‧‧first electrode

14,24‧‧‧第二電極 14,24‧‧‧second electrode

143‧‧‧奈米碳管片段 143‧‧‧Nano carbon nanotube fragments

16,26‧‧‧壓電元件 16,26‧‧‧Piezoelectric components

162,262‧‧‧第一表面 162,262‧‧‧ first surface

164,264‧‧‧第二表面 164,264‧‧‧second surface

18,28‧‧‧音頻訊號輸入裝置 18,28‧‧‧Audio signal input device

29‧‧‧振膜 29‧‧‧ Diaphragm

圖1係本發明第一實施例提供之平板揚聲器結構示意圖。 1 is a schematic structural view of a flat panel speaker according to a first embodiment of the present invention.

圖2係本發明第一實施例提供之奈米碳管拉膜結構示意圖。 2 is a schematic view showing the structure of a carbon nanotube film obtained by the first embodiment of the present invention.

圖3係本發明第一實施例奈米碳管拉膜之掃描電鏡照片。 Fig. 3 is a scanning electron micrograph of a carbon nanotube film taken in a first embodiment of the present invention.

圖4係本發明第一實施例包覆有導電金屬層之奈米碳管結構示意圖。 4 is a schematic view showing the structure of a carbon nanotube coated with a conductive metal layer in the first embodiment of the present invention.

圖5係本發明第一實施例包覆有導電金屬層之奈米碳管透射電鏡照片。 Figure 5 is a transmission electron micrograph of a carbon nanotube coated with a conductive metal layer in the first embodiment of the present invention.

圖6係本發明第二實施例提供之平板揚聲器結構示意圖。 FIG. 6 is a schematic structural view of a flat panel speaker according to a second embodiment of the present invention.

以下將結合附圖詳細說明本發明實施例之平板揚聲器。 Hereinafter, a flat panel speaker according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

請參閱圖1,本發明第一實施例提供一種平板揚聲器10,該平板揚聲器10包括:一壓電元件16,該壓電元件16包括一第一表面162和與該第一表面162相對之一第二表面164;一第一電極12,該第一電極12與所述壓電元件16電連接且設置於其第一表面162;一第二電極14,該第二電極14與所述壓電元件16電連接且設置 於其第二表面164。 Referring to FIG. 1 , a first embodiment of the present invention provides a flat panel speaker 10 . The flat panel speaker 10 includes a piezoelectric element 16 including a first surface 162 and one opposite to the first surface 162 . a second surface 164; a first electrode 12 electrically connected to the piezoelectric element 16 and disposed on the first surface 162 thereof; a second electrode 14, the second electrode 14 and the piezoelectric Component 16 is electrically connected and set On its second surface 164.

所述壓電元件16為壓電晶體、壓電陶瓷、壓電半導體或高分子壓電材料。所述壓電晶體之材料可為鈮酸鋰(LiNbO3)、鉭酸鋰(LiTaO3)、鍺酸鋰(LiGeO3)、鎵酸鋰(LiGaO3)或鍺酸鉍(Bi12GeO20)等,所述壓電陶瓷之材料可為鈦酸鋇(BaTiO3),鋯鈦酸鉛,鈮酸鹽系壓電陶瓷或鈮鎂酸鉛壓電陶瓷等,所述壓電半導體之材料可為硫化鋅(ZnS)、碲化鎘(CdTe)、氧化鋅(ZnO)、硫化鎘(CdS)、碲化鋅(ZnTe)或砷化鎵(GaAs)等,所述高分子壓電材料可為聚二氟乙烯(PVDF)、聚氟乙烯(PVF)、聚氯乙烯(PVC)等。該壓電元件16之厚度不限,可根據實際需要而定。 The piezoelectric element 16 is a piezoelectric crystal, a piezoelectric ceramic, a piezoelectric semiconductor, or a piezoelectric polymer material. The material of the piezoelectric crystal may be lithium niobate (LiNbO 3 ), lithium tantalate (LiTaO 3 ), lithium niobate (LiGeO 3 ), lithium gallium hydride (LiGaO 3 ) or bismuth ruthenate (Bi 12 GeO 20 ). The material of the piezoelectric ceramic may be barium titanate (BaTiO 3 ), lead zirconate titanate, tantalate-based piezoelectric ceramic or lead magnesium niobate piezoelectric ceramic, etc., and the material of the piezoelectric semiconductor may be Zinc sulfide (ZnS), cadmium telluride (CdTe), zinc oxide (ZnO), cadmium sulfide (CdS), zinc telluride (ZnTe) or gallium arsenide (GaAs), etc., the piezoelectric polymer material may be poly Difluoroethylene (PVDF), polyvinyl fluoride (PVF), polyvinyl chloride (PVC), and the like. The thickness of the piezoelectric element 16 is not limited and may be determined according to actual needs.

所述第一電極12和第二電極14均為奈米碳管結構,該奈米碳管結構包括複數個基本沿同一個方向排列之奈米碳管,且該奈米碳管結構中之奈米碳管均勻分佈。此外,所述第一電極12之複數個奈米碳管基本平行於所述壓電元件16之第一表面,所述第二電極14之複數個奈米碳管基本平行於所述壓電元件16之第二表面。且所述奈米碳管包括單壁奈米碳管、雙壁奈米碳管及多壁奈米碳管中之一種或多種。所述單壁奈米碳管之直徑為0.5奈米~10奈米,雙壁奈米碳管之直徑為1.0奈米~15奈米,多壁奈米碳管之直徑為1.5奈米~50奈米。 The first electrode 12 and the second electrode 14 are both carbon nanotube structures, and the carbon nanotube structure comprises a plurality of carbon nanotubes arranged substantially in the same direction, and the carbon nanotube structure is The carbon nanotubes are evenly distributed. In addition, the plurality of carbon nanotubes of the first electrode 12 are substantially parallel to the first surface of the piezoelectric element 16, and the plurality of carbon nanotubes of the second electrode 14 are substantially parallel to the piezoelectric element The second surface of 16. And the carbon nanotube comprises one or more of a single-walled carbon nanotube, a double-walled carbon nanotube, and a multi-walled carbon nanotube. The single-walled carbon nanotube has a diameter of 0.5 nm to 10 nm, the double-walled carbon nanotube has a diameter of 1.0 nm to 15 nm, and the multi-walled carbon nanotube has a diameter of 1.5 nm to 50 nm. Nano.

所述奈米碳管結構為一自支撐結構。所謂自支撐結構係指該奈米碳管結構無需通過一支撐體支撐,也能保持自身特定之形狀。該自支撐結構包括複數個奈米碳管,該複數個奈米碳管通過凡德瓦爾力相互吸引,從而使奈米碳管結構具有特定之形狀。具體地, 所述奈米碳管結構包括奈米碳管膜。 The carbon nanotube structure is a self-supporting structure. The so-called self-supporting structure means that the carbon nanotube structure can maintain its own specific shape without being supported by a support. The self-supporting structure includes a plurality of carbon nanotubes that are attracted to each other by a van der Waals force, so that the carbon nanotube structure has a specific shape. specifically, The carbon nanotube structure includes a carbon nanotube film.

所述奈米碳管膜可為奈米碳管拉膜、帶狀奈米碳管膜或長奈米碳管膜。 The carbon nanotube film may be a carbon nanotube film, a ribbon carbon nanotube film or a long carbon nanotube film.

所述奈米碳管拉膜通過拉取一奈米碳管陣列直接獲得,優選為通過拉取一超順排奈米碳管陣列直接獲得。該奈米碳管拉膜中包括大量奈米碳管首尾相連地沿同一個方向擇優取向排列,請參閱圖2及圖3,具體地,每一奈米碳管拉膜包括複數個連續且定向排列之奈米碳管片段143,該複數個奈米碳管片段143通過凡德瓦爾力首尾相連,每一奈米碳管片段143包括複數個大致相互平行之奈米碳管145,該複數個相互平行之奈米碳管145通過凡德瓦爾力緊密結合。該奈米碳管片段143具有任意之寬度、厚度、均勻性及形狀。所述奈米碳管拉膜之厚度為0.5奈米~100微米。所述奈米碳管拉膜結構及其制備方法請參見范守善等人於2008年8月16日公開之第200833862號台灣公開專利申請。為節省篇幅,僅引用於此,但上述申請所有技術揭露也應視為本發明申請技術揭露之一部分。 The carbon nanotube film is directly obtained by drawing an array of carbon nanotubes, preferably directly by drawing a super-sequential carbon nanotube array. The carbon nanotube film comprises a plurality of carbon nanotubes arranged end to end in a preferred orientation in the same direction, please refer to FIG. 2 and FIG. 3, specifically, each nano carbon tube film comprises a plurality of continuous and oriented Arranged carbon nanotube segments 143, the plurality of carbon nanotube segments 143 are connected end to end by van der Waals force, and each of the carbon nanotube segments 143 includes a plurality of substantially parallel carbon nanotubes 145, the plurality of The mutually parallel carbon nanotubes 145 are tightly coupled by van der Waals forces. The carbon nanotube segment 143 has any width, thickness, uniformity, and shape. The carbon nanotube film has a thickness of 0.5 nm to 100 μm. For the structure of the carbon nanotube film and the preparation method thereof, refer to Taiwan Patent Application No. 200833862, which was published on August 16, 2008 by Fan Shoushan et al. In order to save space, only the above is cited, but all the technical disclosures of the above application are also considered as part of the technical disclosure of the present application.

所述帶狀奈米碳管膜為通過將一狹長之奈米碳管陣列沿垂直於奈米碳管陣列長度方向傾倒在一基底表面而獲得。該帶狀奈米碳管膜包括複數個擇優取向排列之奈米碳管。所述複數個奈米碳管之間互相平行併排排列,且通過凡德瓦爾力緊密結合,該複數個奈米碳管具有大致相等之長度,且其長度可達到毫米量級。所述帶狀奈米碳管膜之寬度與奈米碳管之長度相等,故該帶狀奈米碳管陣列中至少有一個奈米碳管從帶狀奈米碳管膜之一端延伸至另一端,從而跨越整個帶狀奈米碳管膜。該帶狀奈米碳管膜之寬度受 奈米碳管之長度限制,優選地,該奈米碳管之長度為1毫米~10毫米。所述帶狀奈米碳管膜的結構及其製備方法請參見范守善等人於2008年6月13日申請的第97122118號台灣專利申請。為節省篇幅,僅引用於此,但上述申請所有技術揭露也應視為本發明申請技術揭露之一部分。 The ribbon-shaped carbon nanotube film is obtained by pouring an elongated carbon nanotube array perpendicular to the length of the carbon nanotube array on a substrate surface. The ribbon-shaped carbon nanotube film comprises a plurality of carbon nanotubes arranged in a preferred orientation. The plurality of carbon nanotubes are arranged side by side in parallel with each other and closely coupled by van der Waals force, the plurality of carbon nanotubes having substantially equal lengths and having a length in the order of millimeters. The width of the ribbon-shaped carbon nanotube membrane is equal to the length of the carbon nanotube, so that at least one carbon nanotube in the ribbon-shaped carbon nanotube array extends from one end of the ribbon-shaped carbon nanotube membrane to another One end, thus spanning the entire strip of carbon nanotube membrane. The width of the ribbon-shaped carbon nanotube film is affected by The length of the carbon nanotube is limited. Preferably, the length of the carbon nanotube is from 1 mm to 10 mm. The structure of the ribbon-shaped carbon nanotube film and the preparation method thereof are described in Taiwan Patent Application No. 97,212,118, filed on Jun. 13, 2008. In order to save space, only the above is cited, but all the technical disclosures of the above application are also considered as part of the technical disclosure of the present application.

所述長奈米碳管膜為通過放風箏法獲得,具體為使生長於一基底之上之複數個超長奈米碳管在碳源氣流之作用下漂浮於一接收基底之上,之後停止通入碳源氣,從而在接收基底之上形成所述長奈米碳管膜。該長奈米碳管膜包括複數個平行於奈米碳管膜表面之超長奈米碳管,且該複數個奈米碳管彼此基本平行排列。所述複數個超長奈米碳管之長度可大於10厘米。所述奈米碳管膜中相鄰兩個超長奈米碳管之間之距離小於5微米,相鄰兩個超長奈米碳管之間通過凡德瓦爾力緊密連接。所述長奈米碳管膜的結構及其製備方法請參見范守善等人於2008年2月29日申請的第97107078號台灣專利申請。為節省篇幅,僅引用於此,但上述申請所有技術揭露也應視為本發明申請技術揭露之一部分。 The long carbon nanotube film is obtained by a kite-flying method, in which a plurality of ultra-long carbon nanotubes grown on a substrate float on a receiving substrate under the action of a carbon source gas flow, and then stop. A carbon source gas is introduced to form the long carbon nanotube film over the receiving substrate. The long carbon nanotube film comprises a plurality of ultra-long carbon nanotubes parallel to the surface of the carbon nanotube film, and the plurality of carbon nanotubes are arranged substantially parallel to each other. The plurality of super-long carbon nanotubes may have a length greater than 10 cm. The distance between two adjacent ultra-long carbon nanotubes in the carbon nanotube film is less than 5 micrometers, and the adjacent two super-long carbon nanotubes are closely connected by van der Waals force. The structure of the long carbon nanotube film and the preparation method thereof are described in Taiwan Patent Application No. 97107078, which was filed on Feb. 29, 2008. In order to save space, only the above is cited, but all the technical disclosures of the above application are also considered as part of the technical disclosure of the present application.

當所述奈米碳管結構包括上述複數個奈米碳管膜時,該複數個奈米碳管膜可共面且無間隙鋪設或/和層疊鋪設,從而製備不同面積與厚度之奈米碳管結構。在由複數個相互層疊之奈米碳管膜組成之奈米碳管結構中,相鄰兩個奈米碳管膜中之奈米碳管之排列方向相同或不同,優選為奈米碳管之排列方向相同。 When the carbon nanotube structure comprises the plurality of carbon nanotube membranes, the plurality of carbon nanotube membranes can be coplanar and without gap laying or/and lamination to prepare nanocarbons of different areas and thicknesses. Tube structure. In a carbon nanotube structure composed of a plurality of mutually stacked carbon nanotube membranes, the arrangement of the carbon nanotubes in the adjacent two carbon nanotube membranes is the same or different, preferably a carbon nanotube The arrangement direction is the same.

上述奈米碳管結構之厚度可在保證強度之同時根據需要選擇,優選地,該奈米碳管結構之厚度為0.5奈米~1毫米。當上述奈米碳管結構具有較小之厚度,如0.5奈米~99奈米時,該奈米碳管結構 具有較好之透明度,其光透過率可達到86%~95%。另,由於上述奈米碳管結構中奈米碳管通過凡德瓦爾力相互吸引形成一自支撐結構,故該自支撐之奈米碳管結構整體具有較大之強度。同時由於奈米碳管之縱向導電性好,且本實施例奈米碳管結構中之複數個奈米碳管基本沿同一個方向排列,故該奈米碳管結構具有較高之均勻性,且由該奈米碳管結構形成之第一電極12和第二電極14具有良好之導電性,從而使得所述平板揚聲器10具有較高之穩定性和靈敏度。 The thickness of the above-mentioned carbon nanotube structure can be selected as needed while ensuring strength. Preferably, the carbon nanotube structure has a thickness of 0.5 nm to 1 mm. When the above carbon nanotube structure has a small thickness, such as 0.5 nm to 99 nm, the carbon nanotube structure It has good transparency and its light transmittance can reach 86%~95%. In addition, since the carbon nanotubes in the above-mentioned carbon nanotube structure are mutually attracted by the van der Waals force to form a self-supporting structure, the self-supporting carbon nanotube structure as a whole has a large strength. At the same time, since the longitudinal conductivity of the carbon nanotubes is good, and the plurality of carbon nanotubes in the carbon nanotube structure of the embodiment are arranged substantially in the same direction, the carbon nanotube structure has a high uniformity. And the first electrode 12 and the second electrode 14 formed of the carbon nanotube structure have good electrical conductivity, so that the flat panel speaker 10 has high stability and sensitivity.

所述奈米碳管結構分別通過導電粘結劑粘結於所述壓電元件16之第一表面162和第二表面164。該奈米碳管結構中之複數個奈米碳管基本平行於該壓電元件16之第一表面162和第二表面164。由於該奈米碳管結構在垂直於奈米碳管長度方向具有較強之光透過性,相較於具有相同厚度且由無序排列之奈米碳管組成之奈米碳管層,該奈米碳管結構具有較好之透明度;另,由於奈米碳管自身具有較好之柔性和耐彎折性,同時所述奈米碳管結構中之複數個奈米碳管基本沿同一方向平行排列,且相鄰之奈米碳管通過凡德瓦爾力首尾相連,從而使該奈米碳管結構整體也具有較好之柔性和耐彎折性能。故根據實際需要可形成一透明、耐彎折且具有較好靈敏度和穩定性之平板揚聲器10。此外,該奈米碳管結構無需在高溫條件下製備,也無需借助複雜之設備,故其製備工藝簡單,適合工業化生產。 The carbon nanotube structures are bonded to the first surface 162 and the second surface 164 of the piezoelectric element 16 by conductive adhesives, respectively. The plurality of carbon nanotubes in the carbon nanotube structure are substantially parallel to the first surface 162 and the second surface 164 of the piezoelectric element 16. Since the carbon nanotube structure has strong light transmittance perpendicular to the length of the carbon nanotube, the nanocarbon tube layer is composed of a carbon nanotube layer having the same thickness and composed of a disordered arrangement of carbon nanotubes. The carbon nanotube structure has better transparency; in addition, since the carbon nanotube itself has better flexibility and bending resistance, the plurality of carbon nanotubes in the carbon nanotube structure are substantially parallel in the same direction. Arranged, and the adjacent carbon nanotubes are connected end to end by Van der Waals force, so that the carbon nanotube structure as a whole has good flexibility and bending resistance. Therefore, according to actual needs, a flat panel speaker 10 which is transparent, resistant to bending and has good sensitivity and stability can be formed. In addition, the carbon nanotube structure does not need to be prepared under high temperature conditions, and does not need complicated equipment, so the preparation process is simple and suitable for industrial production.

請參閱圖4及圖5,進一步地,該奈米碳管結構中之奈米碳管111表面可包覆至少一導電金屬層112。該至少一導電金屬層112之材料可包括鐵、鈷、鎳、鈀、鈦、銅、銀、金及鉑中之一種或多種 。該至少一導電金屬層112之厚度可為1奈米~100奈米,優選為小於20奈米。本實施例中,該至少一導電金屬層112從內至外依次包括一與奈米碳管潤濕性良好之浸潤層1121及一電導率較高之導電層1122,該浸潤層1121及導電層1122依次包覆於奈米碳管111之表面,所述浸潤層1121為鎳層,所述導電層1122為金層,該鎳層之厚度約為2奈米,該金層之厚度約為15奈米。可以理解,該至少一導電金屬層112還可進一步包括一過渡層(圖未示)及一抗氧化層(圖未示),所述過渡層設置於所述浸潤層1121及導電層1122之間且均與所述浸潤層1121及導電層1122具有良好之結合,所述抗氧化層包覆於該導電層1122表面且抗氧化性能較高。 Referring to FIG. 4 and FIG. 5, further, the surface of the carbon nanotube 111 in the carbon nanotube structure may be coated with at least one conductive metal layer 112. The material of the at least one conductive metal layer 112 may include one or more of iron, cobalt, nickel, palladium, titanium, copper, silver, gold, and platinum. . The at least one conductive metal layer 112 may have a thickness of from 1 nm to 100 nm, preferably less than 20 nm. In this embodiment, the at least one conductive metal layer 112 includes, from the inside to the outside, a wetting layer 1121 having good wettability with the carbon nanotubes and a conductive layer 1122 having a high conductivity, the wetting layer 1121 and the conductive layer. 1122 is sequentially coated on the surface of the carbon nanotube 111, the wetting layer 1121 is a nickel layer, the conductive layer 1122 is a gold layer, the thickness of the nickel layer is about 2 nm, and the thickness of the gold layer is about 15 Nano. It can be understood that the at least one conductive metal layer 112 may further include a transition layer (not shown) and an oxidation resistant layer (not shown) disposed between the wetting layer 1121 and the conductive layer 1122. Both of them have a good combination with the wetting layer 1121 and the conductive layer 1122. The anti-oxidation layer is coated on the surface of the conductive layer 1122 and has high oxidation resistance.

上述至少一導電金屬層112可採用蒸鍍法、濺射法、沈積法、電鍍法或化學鍍法形成於奈米碳管結構中之奈米碳管111表面。具體地,當該奈米碳管結構包括多層重疊設置之奈米碳管膜時,可先分別給每個奈米碳管膜之奈米碳管111表面蒸鍍導電金屬層112,形成複數個奈米碳管複合膜,再將該複數個奈米碳管複合膜相互重疊設置,該奈米碳管複合膜之具體製備方法請參見范守善等人於2008年3月7日申請之第97108084號台灣專利申請。表1為奈米碳管結構為單層奈米碳管拉膜時,在奈米碳管111之表面形成不同導電金屬層112前後之方塊電阻對比,可發現,通過在奈米碳管結構中之奈米碳管111表面形成一導電金屬層112可使所述第一電極12和第二電極14之電阻變小,從而提高了該第一電極12和第二電極14之導電性。 The at least one conductive metal layer 112 may be formed on the surface of the carbon nanotube 111 in the carbon nanotube structure by an evaporation method, a sputtering method, a deposition method, an electroplating method, or an electroless plating method. Specifically, when the carbon nanotube structure comprises a plurality of stacked carbon nanotube films, the surface of the carbon nanotubes 111 of each of the carbon nanotube films may be first vapor-deposited to form a plurality of conductive metal layers 112. The carbon nanotube composite membrane, and the plurality of carbon nanotube composite membranes are overlapped with each other. For the specific preparation method of the nanocarbon nanotube composite membrane, please refer to No. 97108084 filed by Fan Shoushan et al. on March 7, 2008. Taiwan patent application. Table 1 shows the comparison of the sheet resistances before and after the formation of different conductive metal layers 112 on the surface of the carbon nanotubes 111 when the carbon nanotube structure is a single-layer carbon nanotube film. It can be found that in the structure of the carbon nanotubes. Forming a conductive metal layer 112 on the surface of the carbon nanotube 111 can reduce the electrical resistance of the first electrode 12 and the second electrode 14, thereby improving the conductivity of the first electrode 12 and the second electrode 14.

利用逆壓電效應原理,當一音頻訊號輸入裝置18將一音頻訊號通過所述第一電極12和第二電極14輸入所述壓電元件16時,所述壓電元件16會發生彈性變形。本實施例中,由於設置於該壓電元件16表面之第一電極12和第二電極14由具有柔性之奈米碳管組成,故該壓電元件16之彈性變性會使所述第一電極12和第二電極14相應地發生振動,從而推動周圍空氣發生振動並引起發聲。 With the principle of the inverse piezoelectric effect, when an audio signal input device 18 inputs an audio signal through the first electrode 12 and the second electrode 14 to the piezoelectric element 16, the piezoelectric element 16 is elastically deformed. In this embodiment, since the first electrode 12 and the second electrode 14 disposed on the surface of the piezoelectric element 16 are composed of a flexible carbon nanotube, the elastic denaturation of the piezoelectric element 16 causes the first electrode The second electrode 14 and the second electrode 14 vibrate accordingly, thereby urging the surrounding air to vibrate and causing sound.

請參閱圖6,本發明第二實施例提供一種平板揚聲器20,該平板揚聲器20包括一壓電元件26,該壓電元件26包括一第一表面262和與該第一表面262相對之一第二表面264;一第一電極22,該第一電極22與所述壓電元件26電連接且設置於其第一表面262;一第二電極24,該第二電極24與所述壓電元件26電連接且設置於其第二表面264。 Referring to FIG. 6, a second embodiment of the present invention provides a flat panel speaker 20 that includes a piezoelectric element 26 that includes a first surface 262 and a first surface 262 opposite the first surface 262. a second surface 264; a first electrode 22 electrically connected to the piezoelectric element 26 and disposed on the first surface 262 thereof; a second electrode 24, the second electrode 24 and the piezoelectric element 26 is electrically connected and disposed on its second surface 264.

本實施例與上述第一實施例基本相同,其區別在於,該平板揚聲器20進一步包括一振膜29,所述振膜29可通過普通粘結劑粘結於所述第一電極22或第二電極24之表面。 This embodiment is basically the same as the first embodiment described above, except that the flat panel speaker 20 further includes a diaphragm 29, and the diaphragm 29 can be bonded to the first electrode 22 or the second by a common adhesive. The surface of the electrode 24.

所述振膜29之材料可選擇先前技術中傳統揚聲器所採用之傳統振膜材料,如樹脂、紙或金屬材料等。同時,該振膜29之厚度不 限,只需確保所述壓電元件26之振動可驅動該振膜29同時發生振動,並推動周圍空氣振動發聲即可。 The material of the diaphragm 29 can be selected from conventional diaphragm materials used in conventional speakers in the prior art, such as resin, paper or metal materials. At the same time, the thickness of the diaphragm 29 is not However, it is only necessary to ensure that the vibration of the piezoelectric element 26 can drive the diaphragm 29 to vibrate at the same time, and push the surrounding air to vibrate and sound.

該平板揚聲器20之具體工作過程為,採用一音頻訊號輸入裝置28將一音頻訊號通過所述第一電極22和第二電極24輸入所述壓電元件26,從而使該壓電元件26由於逆壓電效應而振動,該壓電元件26之振動相應地驅動所述振膜29發生振動,從而推動周圍空氣振動發聲。 The specific operation of the flat panel speaker 20 is that an audio signal input device 28 is used to input an audio signal through the first electrode 22 and the second electrode 24 to the piezoelectric element 26, thereby causing the piezoelectric element 26 to be reversed. Vibrating by the piezoelectric effect, the vibration of the piezoelectric element 26 correspondingly drives the diaphragm 29 to vibrate, thereby urging the surrounding air to vibrate.

該平板揚聲器20之振膜29之振動無需採用傳統揚聲器之磁性系統和音圈等複雜之結構便可振動發聲。 The vibration of the diaphragm 29 of the flat panel speaker 20 can vibrate and sound without using a complicated structure such as a magnetic system of a conventional speaker and a voice coil.

本發明之平板揚聲器具有以下優點:所述平板揚聲器採用奈米碳管結構作為第一電極和第二電極,且該奈米碳管結構包括複數個基本沿同一個方向排列之奈米碳管,由於奈米碳管之縱向導電性好,故本發明之第一電極和第二電極具有良好之導電性,從而使整個平板揚聲器具有較高之靈敏度和穩定性;此外由於本發明之奈米碳管結構具有一自支撐結構,故所述第一電極和第二電極強度較高,從而延長了整個平板揚聲器之使用壽命;由於奈米碳管結構中在垂直於奈米碳管長度方向具有較強之光透過性,故,該奈米碳管結構具有較好之透明度;本發明通過在奈米碳管結構之表面形成一導電金屬層,可更進一步提高該平板揚聲器第一電極和第二電極之導電性能。 The flat panel speaker of the present invention has the following advantages: the flat panel speaker adopts a carbon nanotube structure as a first electrode and a second electrode, and the carbon nanotube structure comprises a plurality of carbon nanotubes arranged substantially in the same direction. Since the longitudinal conductivity of the carbon nanotubes is good, the first electrode and the second electrode of the present invention have good electrical conductivity, so that the entire flat panel speaker has high sensitivity and stability; and further, the nanocarbon of the present invention The tube structure has a self-supporting structure, so the first electrode and the second electrode have higher strength, thereby prolonging the service life of the entire flat panel speaker; since the carbon nanotube structure is perpendicular to the length of the carbon nanotube tube The light transmittance of the carbon nanotubes has a good transparency; the present invention further improves the first electrode and the second electrode of the flat panel speaker by forming a conductive metal layer on the surface of the carbon nanotube structure. The electrical conductivity of the electrode.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

10‧‧‧平板揚聲器 10‧‧‧ flat speaker

12‧‧‧第一電極 12‧‧‧First electrode

14‧‧‧第二電極 14‧‧‧second electrode

16‧‧‧壓電元件 16‧‧‧Piezoelectric components

162‧‧‧第一表面 162‧‧‧ first surface

164‧‧‧第二表面 164‧‧‧ second surface

Claims (17)

一種平板揚聲器,該平板揚聲器包括:一壓電元件,該壓電元件包括一第一表面和與該第一表面相對之一第二表面;一第一電極,該第一電極與所述壓電元件電連接且設置於其第一表面;一第二電極,該第二電極與所述壓電元件電連接且設置於其第二表面;其改良在於,所述第一電極和第二電極均包括一奈米碳管結構,該奈米碳管結構包括複數個基本沿同一個方向排列之奈米碳管,所述奈米碳管之表面進一步包覆有至少一導電金屬層。 A flat panel speaker comprising: a piezoelectric element including a first surface and a second surface opposite the first surface; a first electrode, the first electrode and the piezoelectric The element is electrically connected and disposed on the first surface thereof; a second electrode electrically connected to the piezoelectric element and disposed on the second surface thereof; and the improvement is that the first electrode and the second electrode are both The carbon nanotube structure comprises a plurality of carbon nanotubes arranged substantially in the same direction, and the surface of the carbon nanotube is further coated with at least one conductive metal layer. 如請求項第1項所述之平板揚聲器,其中,所述第一電極之複數個奈米碳管基本平行於所述壓電元件之第一表面。 The flat panel speaker of claim 1, wherein the plurality of carbon nanotubes of the first electrode are substantially parallel to the first surface of the piezoelectric element. 如請求項第1項所述之平板揚聲器,其中,所述第二電極之複數個奈米碳管基本平行於所述壓電元件之第二表面。 The flat panel speaker of claim 1, wherein the plurality of carbon nanotubes of the second electrode are substantially parallel to the second surface of the piezoelectric element. 如請求項第1項所述之平板揚聲器,其中,所述奈米碳管結構包括至少一奈米碳管膜。 The flat panel speaker of claim 1, wherein the carbon nanotube structure comprises at least one carbon nanotube film. 如請求項第4項所述之平板揚聲器,其中,所述奈米碳管膜包括複數個通過凡德瓦爾力首尾相連且沿同一方向排列之奈米碳管。 The flat panel speaker of claim 4, wherein the carbon nanotube film comprises a plurality of carbon nanotubes connected end to end by van der Waals force and arranged in the same direction. 如請求項第4項所述之平板揚聲器,其中,所述奈米碳管膜包括複數個大致平行排列之奈米碳管。 The flat panel speaker of claim 4, wherein the carbon nanotube film comprises a plurality of substantially parallel arranged carbon nanotubes. 如請求項第4項所述之平板揚聲器,其中,所述奈米碳管結構包括複數個奈米碳管膜,該複數個奈米碳管膜共面且無間隙鋪設或層疊鋪設。 The flat panel speaker of claim 4, wherein the carbon nanotube structure comprises a plurality of carbon nanotube films, the plurality of carbon nanotube films being coplanar and without gaps laid or laminated. 如請求項第1項所述之平板揚聲器,其中,所述奈米碳管結構為一自支撐結構。 The flat panel speaker of claim 1, wherein the carbon nanotube structure is a self-supporting structure. 如請求項第1項所述之平板揚聲器,其中,所述奈米碳管包括單壁奈米碳管、雙壁奈米碳管及多壁奈米碳管中之一種或多種。 The flat panel speaker of claim 1, wherein the carbon nanotube comprises one or more of a single-walled carbon nanotube, a double-walled carbon nanotube, and a multi-walled carbon nanotube. 如請求項第1項所述之平板揚聲器,其中,所述至少一導電金屬層包括一浸潤層及一導電層,該浸潤層及導電層依次包覆於所述奈米碳管之表面。 The flat panel speaker of claim 1, wherein the at least one conductive metal layer comprises a wetting layer and a conductive layer, and the wetting layer and the conductive layer are sequentially coated on the surface of the carbon nanotube. 如請求項第10項所述之平板揚聲器,其中,所述導電金屬層之材料包括鎳、鈀、鈦、銅、銀、金、鉑或其任意組合之合金。 The flat panel speaker according to claim 10, wherein the material of the conductive metal layer comprises an alloy of nickel, palladium, titanium, copper, silver, gold, platinum or any combination thereof. 如請求項第10項所述之平板揚聲器,其中,所述導電金屬層之厚度為1奈米~100奈米。 The flat panel speaker according to claim 10, wherein the conductive metal layer has a thickness of from 1 nm to 100 nm. 如請求項第10項所述之平板揚聲器,其中,所述第一電極和第二電極分別採用導電粘結劑粘結於所述壓電元件之第一表面和第二表面。 The flat panel speaker of claim 10, wherein the first electrode and the second electrode are respectively bonded to the first surface and the second surface of the piezoelectric element with a conductive adhesive. 如請求項第1項所述之平板揚聲器,其中,所述壓電元件之材料為聚二氟乙烯、聚氟乙烯或聚氯乙烯。 The flat panel speaker according to claim 1, wherein the piezoelectric element is made of polyvinylidene fluoride, polyvinyl fluoride or polyvinyl chloride. 一種平板揚聲器,該平板揚聲器包括:一壓電元件,該壓電元件包括一第一表面和與該第一表面相對之一第二表面;一第一電極,該第一電極與所述壓電元件電連接且設置於其第一表面;一第二電極,該第二電極與所述壓電元件電連接且設置於所述壓電元件之第二表面;一振膜,所述振膜設置於所述第一電極或第二電極之表面;其改良在於,所述第一電極和第二電極為一奈米碳管結構,該奈米碳管結構包括複數個基本沿同一個方向排列之奈米碳管,所述奈米碳管之表面進一步包覆有至少一導電金屬層。 A flat panel speaker comprising: a piezoelectric element including a first surface and a second surface opposite the first surface; a first electrode, the first electrode and the piezoelectric The element is electrically connected and disposed on the first surface thereof; a second electrode electrically connected to the piezoelectric element and disposed on the second surface of the piezoelectric element; a diaphragm, the diaphragm is disposed On the surface of the first electrode or the second electrode; the improvement is that the first electrode and the second electrode are a carbon nanotube structure, and the carbon nanotube structure comprises a plurality of substantially aligned in the same direction The carbon nanotube, the surface of the carbon nanotube is further coated with at least one conductive metal layer. 如請求項第15項所述之平板揚聲器,其中,所述振膜採用粘結劑與所述第一電極或第二電極粘結。 The flat panel speaker according to claim 15, wherein the diaphragm is bonded to the first electrode or the second electrode by an adhesive. 如請求項第15項所述之平板揚聲器,其中,所述振膜之材料為樹脂、紙或金屬。 The flat panel speaker according to claim 15, wherein the material of the diaphragm is resin, paper or metal.
TW098118139A 2009-06-02 2009-06-02 Flat plane speaker TWI531250B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW098118139A TWI531250B (en) 2009-06-02 2009-06-02 Flat plane speaker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098118139A TWI531250B (en) 2009-06-02 2009-06-02 Flat plane speaker

Publications (2)

Publication Number Publication Date
TW201044887A TW201044887A (en) 2010-12-16
TWI531250B true TWI531250B (en) 2016-04-21

Family

ID=45001487

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098118139A TWI531250B (en) 2009-06-02 2009-06-02 Flat plane speaker

Country Status (1)

Country Link
TW (1) TWI531250B (en)

Also Published As

Publication number Publication date
TW201044887A (en) 2010-12-16

Similar Documents

Publication Publication Date Title
CN101895807B (en) Flat panel loudspeaker
JP7206294B2 (en) Laminated piezoelectric element and electroacoustic transducer
WO2020196850A1 (en) Piezoelectric film, layered piezoelectric element, and electroacoustic transducer
WO2016121765A1 (en) Electroacoustic conversion film and method for manufacturing electroacoustic conversion film
JP7470765B2 (en) Electroacoustic Transducer
JP2016015354A (en) Electroacoustic conversion film and conduction method of the same
US20220103949A1 (en) Electroacoustic conversion film and electroacoustic converter
WO2021199800A1 (en) Multilayer piezoelectric element
JP7137689B2 (en) Piezoelectric Films, Laminated Piezoelectric Elements and Electroacoustic Transducers
TWI827851B (en) Polymer composite piezoelectric body, and piezoelectric film
TWI400807B (en) Thin film transistor
TW202119662A (en) Piezoelectric element
TWI531250B (en) Flat plane speaker
TW202118097A (en) Piezoelectric element
TW202236704A (en) Piezoelectric film
WO2021095546A1 (en) Laminated piezoelectric element
TW202119661A (en) Piezoelectric element
TW202320366A (en) Piezoelectric device and piezoelectric speaker
CN116965059A (en) Laminated piezoelectric element