TWI528533B - Photo detectors and fabrication methods thereof - Google Patents

Photo detectors and fabrication methods thereof Download PDF

Info

Publication number
TWI528533B
TWI528533B TW101124362A TW101124362A TWI528533B TW I528533 B TWI528533 B TW I528533B TW 101124362 A TW101124362 A TW 101124362A TW 101124362 A TW101124362 A TW 101124362A TW I528533 B TWI528533 B TW I528533B
Authority
TW
Taiwan
Prior art keywords
glass
photosensitive semiconductor
wafer
photodetector
photochromic
Prior art date
Application number
TW101124362A
Other languages
Chinese (zh)
Other versions
TW201403800A (en
Inventor
蔡博文
Original Assignee
恆景科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 恆景科技股份有限公司 filed Critical 恆景科技股份有限公司
Priority to TW101124362A priority Critical patent/TWI528533B/en
Publication of TW201403800A publication Critical patent/TW201403800A/en
Application granted granted Critical
Publication of TWI528533B publication Critical patent/TWI528533B/en

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)

Description

光偵測器及其製造方法 Photodetector and method of manufacturing same

本發明係有關於光偵測器，特別有關於結合光致變色玻璃的光偵測器。 The present invention relates to photodetectors, and more particularly to photodetectors incorporating photochromic glasses.

目前被應用於製備紫外光偵測器的材料主要為三五族(III-V)金屬之半導體材料，例如氮化鎵(GaN)、氮化鋁鎵(AlGaN)等，然而這些材料的價格昂貴，導致紫外光偵測器的製造成本無法降低。因此，有一些研究嘗試以矽基材料取代三五族(III-V)金屬之半導體材料來製備紫外光偵測器，然而，由於紫外光只能在矽基材料很淺的表面產生電子電洞對，並且這些電子電洞對很容易被矽基材料吸收，導致紫外光不容易被矽基材料製備的感測器偵測到。 The materials currently used in the preparation of ultraviolet light detectors are mainly semiconductor materials of Group III-V (III-V) metals, such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), etc., however, these materials are expensive. As a result, the manufacturing cost of the ultraviolet light detector cannot be reduced. Therefore, some studies have attempted to replace the tri-five (III-V) metal semiconductor materials with bismuth-based materials to prepare ultraviolet photodetectors. However, since ultraviolet light can only generate electron holes on the very shallow surface of the bismuth-based material. Yes, and these electron hole pairs are easily absorbed by the ruthenium-based material, resulting in the UV light being not easily detected by the sensor prepared from the ruthenium-based material.

此外，因為矽的能隙(band gap)很小，導致矽基材料製備的紫外光偵測器不能濾除可見光與紅外光，進而很難準確地偵測紫外光。雖然有一些紫外光偵測器使用濾光片來濾除可見光與紅外光，但是紫外光不容易被矽基材料製備的感測器偵測的問題仍存在。 In addition, because the band gap of the germanium is small, the ultraviolet light detector prepared by the germanium-based material cannot filter visible light and infrared light, and thus it is difficult to accurately detect ultraviolet light. Although some ultraviolet light detectors use filters to filter out visible light and infrared light, the problem that ultraviolet light is not easily detected by a sensor made of a germanium-based material still exists.

本發明之實施例提供光偵測器及其製造方法，此光偵測器係由光致變色玻璃與感光半導體元件組合而成，並且光偵測器的製造方法是採用晶圓級製程製造出光偵測器。 Embodiments of the present invention provide a photodetector and a method of fabricating the same, which are formed by combining a photochromic glass and a photosensitive semiconductor element, and the photodetector is manufactured by using a wafer level process to produce light. Detector.

依據本發明之一實施例，光偵測器包括：光致變色玻璃，其接收第一波段的光而變色，進而影響可見光波段的 通過量；以及感光半導體元件設置於光致變色玻璃下方，其感測通過光致變色玻璃的可見光波段，據以產生感測信號，以偵測環境中第一波段的光之強度。 According to an embodiment of the invention, the photodetector comprises: a photochromic glass that receives light of the first wavelength band and changes color, thereby affecting the visible light band. The photosensitive semiconductor component is disposed under the photochromic glass and senses the visible light band passing through the photochromic glass to generate a sensing signal to detect the intensity of light in the first wavelength band in the environment.

依據本發明之另一實施例，光偵測器包括：光致變色玻璃，其接收第一波段的光而變色，進而影響可見光波段的通過量；第一感光半導體元件設置於光致變色玻璃下方，其感測通過光致變色玻璃的可見光波段，據以產生第一感測信號；透明玻璃鄰接光致變色玻璃而設置，讓環境中的可見光波段的光通過；以及第二感光半導體元件設置於透明玻璃下方，其感測通過透明玻璃的環境中的可見光波段，據以產生第二感測信號，其中經由第一感測信號與第二感測信號之間的差異值，以偵測環境中第一波段的光之強度。 According to another embodiment of the present invention, a photodetector includes: a photochromic glass that receives light of a first wavelength band to change color, thereby affecting a throughput in a visible light band; and the first photosensitive semiconductor element is disposed under the photochromic glass Sensing through the visible light band of the photochromic glass to generate a first sensing signal; the transparent glass is disposed adjacent to the photochromic glass to allow light in the visible light band in the environment to pass; and the second photosensitive semiconductor element is disposed on Under the transparent glass, it senses a visible light band in the environment passing through the transparent glass, thereby generating a second sensing signal, wherein the difference value between the first sensing signal and the second sensing signal is used to detect the environment The intensity of light in the first band.

此外，依據本發明之一實施例，光偵測器的製造方法包括：提供光致變色玻璃；提供晶圓，其具有複數個感光半導體元件形成於其上；將光致變色玻璃與晶圓接合；以及切割光致變色玻璃與晶圓，以分離這些感光半導體元件，形成複數個光偵測器。 Furthermore, in accordance with an embodiment of the present invention, a method of fabricating a photodetector includes: providing a photochromic glass; providing a wafer having a plurality of photosensitive semiconductor elements formed thereon; bonding the photochromic glass to the wafer And cutting the photochromic glass and the wafer to separate the photosensitive semiconductor components to form a plurality of photodetectors.

依據本發明之另一實施例，光偵測器的製造方法包括：提供包含複數個光致變色玻璃區與複數個透明玻璃區的玻璃基板，其中每一個光致變色玻璃區至少鄰接一個透明玻璃區；提供晶圓，其具有複數個感光半導體元件形成於其上；將玻璃基板與晶圓接合，其中每一個光致變色玻璃區分別對應至一個感光半導體元件，並且每一個透明玻璃區也分別對應至一個感光半導體元件；以及以一個光致 變色玻璃區和一個透明玻璃區為一個切割單位，切割玻璃基板與晶圓，形成複數個光偵測器。 According to another embodiment of the present invention, a method of fabricating a photodetector includes: providing a glass substrate comprising a plurality of photochromic glass regions and a plurality of transparent glass regions, wherein each photochromic glass region is adjacent to at least one transparent glass Providing a wafer having a plurality of photosensitive semiconductor elements formed thereon; bonding the glass substrate to the wafer, wherein each of the photochromic glass regions respectively corresponds to one photosensitive semiconductor element, and each of the transparent glass regions is also respectively Corresponding to a photosensitive semiconductor component; and with a light The color-changing glass zone and a transparent glass zone are a cutting unit that cuts the glass substrate and the wafer to form a plurality of photodetectors.

為了讓本發明之上述目的、特徵、及優點能更明顯易懂，以下配合所附圖式，作詳細說明如下： In order to make the above objects, features, and advantages of the present invention more comprehensible, the following detailed description is made in conjunction with the accompanying drawings.

參閱第1圖，其係顯示依據本發明之一實施例，光偵測器100的剖面示意圖。光偵測器100包含光致變色玻璃(photochromic glass)107以及在矽基底101中形成的感光半導體元件103，感光半導體元件103例如為互補式金氧半導體(complementary metal oxide semiconductor；CMOS)感測器或其他可在矽基底中形成並且可感測可見光的半導體元件。另外，在光致變色玻璃107與矽基底101之間還可以設置間隔層(spacer)105，在一實施例中，間隔層105可以在光致變色玻璃107與感光半導體元件103之間產生被間隔層105圍繞的空隙105C。 Referring to Figure 1, there is shown a cross-sectional view of a photodetector 100 in accordance with an embodiment of the present invention. The photodetector 100 includes a photochromic glass 107 and a photosensitive semiconductor element 103 formed in the germanium substrate 101. The photoreceptor semiconductor element 103 is, for example, a complementary metal oxide semiconductor (CMOS) sensor. Or other semiconductor component that can be formed in the germanium substrate and that can sense visible light. In addition, a spacer 105 may be disposed between the photochromic glass 107 and the ruthenium substrate 101. In an embodiment, the spacer layer 105 may be spaced between the photochromic glass 107 and the photosensitive semiconductor element 103. A void 105C surrounded by layer 105.

依據本發明之實施例，光致變色玻璃107可以接收紫外光、紅外光或其他波段的光而變色，針對不同波段的光，光致變色玻璃107可以具有不同材料的塗層或摻雜物。在一實施例中，光致變色玻璃107在接收紫外光、紅外光或其他波段的光之前的顏色較淺或為透明，但是光致變色玻璃107接收紫外光、紅外光或其他波段的光之後的顏色會變深，使得通過光致變色玻璃107的可見光波段的通過量減少；在另一實施例中，光致變色玻璃107在接收紫外光、紅外光或其他波段的光之前的顏色較深，但是光致變色玻 璃107接收紫外光、紅外光或其他波段的光之後的顏色會變淺或為透明，使得通過光致變色玻璃107的可見光波段的通過量增加。 In accordance with an embodiment of the present invention, the photochromic glass 107 can be discolored by receiving light of ultraviolet light, infrared light, or other wavelengths. The photochromic glass 107 can have coatings or dopants of different materials for different wavelengths of light. In one embodiment, the photochromic glass 107 is lighter or transparent prior to receiving ultraviolet, infrared, or other wavelengths of light, but the photochromic glass 107 receives ultraviolet, infrared, or other wavelengths of light. The color will become darker, so that the throughput through the visible light band of the photochromic glass 107 is reduced; in another embodiment, the photochromic glass 107 is darker before receiving light of ultraviolet light, infrared light, or other wavelength bands. But photochromic glass The color of the glass 107 after receiving ultraviolet light, infrared light, or other wavelengths of light may become lighter or transparent, so that the throughput through the visible light band of the photochromic glass 107 is increased.

由於光致變色玻璃107會因為接收不同強度的紫外光、紅外光或其他波段的光而產生不同深淺的顏色變化，進而影響光致變色玻璃107的可見光波段的通過量，因此環境中紫外光、紅外光或其他波段的光強度大小與通過光致變色玻璃107的可見光波段的通過量之間具有正比或反比的比例關係，藉由感光半導體元件103感測通過光致變色玻璃107的可見光波段，據以產生感測信號，以偵測出環境中紫外光、紅外光或其他波段的光強度。 Since the photochromic glass 107 generates different shades of color change by receiving ultraviolet light, infrared light or other wavelengths of light of different intensities, thereby affecting the throughput of the visible light band of the photochromic glass 107, ultraviolet light in the environment, The magnitude of the light intensity of the infrared light or other wavelength band is proportional to the ratio of the throughput of the visible light band passing through the photochromic glass 107, and the photosensitive semiconductor element 103 senses the visible light band passing through the photochromic glass 107. A sensing signal is generated to detect the intensity of ultraviolet light, infrared light, or other wavelengths in the environment.

參閱第2圖，其係顯示依據本發明之一實施例，光偵測器200的剖面示意圖。光偵測器200除了上述的光偵測器100之外，還增加另一個參考用光偵測器100R鄰接光偵測器100而設置。參考用光偵測器100R中的感光半導體元件103係感測通過透明玻璃109的可見光波段的通過量，參考用光偵測器100R中的感光半導體元件103與光偵測器100中使用的感光半導體元件103相同。 Referring to Figure 2, there is shown a cross-sectional view of a photodetector 200 in accordance with an embodiment of the present invention. In addition to the above-described photodetector 100, the photodetector 200 is further provided with another reference photodetector 100R adjacent to the photodetector 100. The photosensitive semiconductor element 103 in the reference photodetector 100R senses the throughput of the visible light band passing through the transparent glass 109, and refers to the photosensitive semiconductor element 103 in the photodetector 100R and the photosensitive light used in the photodetector 100. The semiconductor element 103 is the same.

在此實施例中，光偵測器200使用參考用光偵測器100R偵測環境中的可見光波段的強度作為背景值，利用此背景值與光偵測器100中的感光半導體元件103所感測到的通過光致變色玻璃107的可見光波段的通過量之差異值，可以更準確地偵測出在各種不同環境中的紫外光、紅外光或其他波段的光強度。 In this embodiment, the photodetector 200 detects the intensity of the visible light band in the environment using the reference photodetector 100R as a background value, and the background value is sensed by the photosensitive semiconductor element 103 in the photodetector 100. The amount of light passing through the visible light band of the photochromic glass 107 can more accurately detect the light intensity of ultraviolet light, infrared light or other wavelength bands in various environments.

例如，當光偵測器200在黑暗環境中，例如黑暗室內， 具有較少光線，此時雖然光致變色玻璃107不會接收到紫外光、紅外光或其他波段的光而顏色變深，但是光偵測器100中的感光半導體元件103可以感測到的通過光致變色玻璃107的可見光波段的通過量很少，此感測值與將光偵測器100設置在紫外光、紅外光或其他波段的光強度極大的環境中，光致變色玻璃107因接收紫外光、紅外光或其他波段的光而顏色變深，使得通過光致變色玻璃107的可見光波段的通過量很小時，光偵測器100中的感光半導體元件103所感測到的結果相近，如此會導致光偵測器100發生誤判的情況。 For example, when the light detector 200 is in a dark environment, such as a dark room, There is less light, and although the photochromic glass 107 does not receive ultraviolet light, infrared light or other wavelengths of light and the color becomes dark, the photosensitive semiconductor element 103 in the photodetector 100 can be sensed through. The amount of light in the visible light band of the photochromic glass 107 is small, and the sensing value is in an environment where the light detector 100 is placed in ultraviolet light, infrared light, or other wavelengths, and the photochromic glass 107 is received. Ultraviolet light, infrared light or light of other wavelength bands becomes darker, so that the passage of the visible light band of the photochromic glass 107 is small, and the photosensitive semiconductor element 103 in the photodetector 100 senses a similar result. This may cause a false positive of the photodetector 100.

為了克服上述誤判的問題，依據本發明之一實施例，如第2圖所示，在使用光致變色玻璃107的光偵測器100旁另外增設使用透明玻璃109的參考用光偵測器100R，在黑暗環境中，參考用光偵測器100R中的感光半導體元件103所感測到的通過透明玻璃109的可見光波段的通過量也很少，光偵測器100與參考用光偵測器100R兩者的感測值之差異值很小，表示環境中的紫外光、紅外光或其他波段的光的強度很微弱。 In order to overcome the above-mentioned problem of misjudgment, according to an embodiment of the present invention, as shown in FIG. 2, a reference photodetector 100R using transparent glass 109 is additionally provided beside the photodetector 100 using the photochromic glass 107. In the dark environment, the amount of light passing through the visible light band of the transparent glass 109 sensed by the photosensitive semiconductor element 103 in the reference photodetector 100R is also small, and the photodetector 100 and the reference photodetector 100R The difference between the sensed values of the two is small, indicating that the intensity of ultraviolet, infrared or other wavelengths in the environment is very weak.

另外，當光偵測器200在陽光強烈(可見光強度高)而且紫外光、紅外光或其他波段的光強度高的環境中操作，並且光致變色玻璃107接收紫外光、紅外光或其他波段的光之後顏色會變深，此時光致變色玻璃107因為接收紫外光、紅外光或其他波段的光而顏色變深，光偵測器100中的感光半導體元件103可以感測到的通過光致變色玻璃107的可見光波段的通過量很小，而參考用光偵測器100R 中的感光半導體元件103所感測到的通過透明玻璃109的可見光波段的通過量則很大，光偵測器100與參考用光偵測器100R兩者的感測值之差異值很大，表示環境中的紫外光、紅外光或其他波段的光的強度很高。 In addition, when the photodetector 200 operates in an environment where sunlight is strong (high visible light intensity) and ultraviolet light, infrared light, or other wavelengths of light intensity is high, and the photochromic glass 107 receives ultraviolet light, infrared light, or other wavelength bands. After the light, the color becomes darker, and at this time, the photochromic glass 107 is darkened by receiving ultraviolet light, infrared light or other wavelengths of light, and the photosensitive semiconductor element 103 in the photodetector 100 can sense the photochromism. The throughput of the visible light band of the glass 107 is small, and the reference photodetector 100R The amount of light passing through the visible light band of the transparent glass 109 sensed by the photosensitive semiconductor element 103 is large, and the difference between the sensed values of the photodetector 100 and the reference photodetector 100R is large, indicating The intensity of ultraviolet, infrared or other wavelengths of light in the environment is high.

參閱第3A-3B圖，其係顯示依據本發明之一實施例，利用晶圓級製程(wafer-level process)製造第1圖的光偵測器100的中間階段之剖面示意圖。如第3A圖所示，首先提供光致變色玻璃107，此光致變色玻璃107的尺寸與後續接合的晶圓102的尺寸相當。在一實施例中，先在光致變色玻璃107的內側表面上黏著間隔層105，間隔層105具有多個空隙105C。 Referring to Figures 3A-3B, there is shown a cross-sectional view of an intermediate stage of fabricating the photodetector 100 of Figure 1 using a wafer-level process in accordance with an embodiment of the present invention. As shown in FIG. 3A, a photochromic glass 107 is first provided, the size of which is comparable to the size of the subsequently bonded wafer 102. In one embodiment, a spacer layer 105 is first adhered to the inner surface of the photochromic glass 107, and the spacer layer 105 has a plurality of voids 105C.

接著，在光致變色玻璃107的內側表面下方提供晶圓102，晶圓102的材料可以是矽基底101，並且在矽基底101上形成多個感光半導體元件103。利用接合製程110將光致變色玻璃107與晶圓102接合在一起，接合後的結構如第3B圖所示，其中間隔層105係設置在光致變色玻璃107與晶圓102之間，並且在光致變色玻璃107與感光半導體元件103之間產生被間隔層105所圍繞的空隙105C。 Next, a wafer 102 is provided under the inner surface of the photochromic glass 107. The material of the wafer 102 may be a germanium substrate 101, and a plurality of photosensitive semiconductor elements 103 are formed on the germanium substrate 101. The photochromic glass 107 is bonded to the wafer 102 by a bonding process 110, and the bonded structure is as shown in FIG. 3B, wherein the spacer layer 105 is disposed between the photochromic glass 107 and the wafer 102, and A gap 105C surrounded by the spacer layer 105 is generated between the photochromic glass 107 and the photosensitive semiconductor element 103.

在另一實施例中，也可以先將間隔層105黏著在晶圓102上，然後再將具有間隔層105黏著於其上的晶圓102與光致變色玻璃107接合。 In another embodiment, the spacer layer 105 may be adhered to the wafer 102 first, and then the wafer 102 having the spacer layer 105 adhered thereto is bonded to the photochromic glass 107.

之後，沿著切割線112對接合後的光致變色玻璃107與晶圓102進行切割製程，以分離這些感光半導體元件103，形成複數個如第1圖所示之光偵測器100。 Thereafter, the bonded photochromic glass 107 and the wafer 102 are subjected to a dicing process along the dicing line 112 to separate the photosensitive semiconductor elements 103 to form a plurality of photodetectors 100 as shown in FIG.

參閱第3C-3D圖，其係顯示依據本發明之一實施例， 利用晶圓級製程製造第2圖的光偵測器200中的參考用光偵測器100R的中間階段之剖面示意圖。第3C-3D圖與第3A-3B圖的差別在於提供透明玻璃109與晶圓102接合，之後沿著切割線112對接合後的透明玻璃109及晶圓102進行切割製程，以分離這些感光半導體元件103，形成複數個如第2圖所示之光偵測器200中的參考用光偵測器100R。 Referring to Figures 3C-3D, which are shown in accordance with an embodiment of the present invention, A cross-sectional view of an intermediate stage of the reference photodetector 100R in the photodetector 200 of FIG. 2 is fabricated using a wafer level process. The difference between the 3C-3D and 3A-3B is that the transparent glass 109 is bonded to the wafer 102, and then the bonded transparent glass 109 and the wafer 102 are cut along the cutting line 112 to separate the photosensitive semiconductors. The element 103 forms a plurality of reference photodetectors 100R in the photodetector 200 as shown in FIG.

接著，將由第3A-3B圖的製造方法所製造的一個光偵測器100與由第3C-3D圖所製造的一個參考用光偵測器100R相鄰而接合在一起，即完成如第2圖所示之光偵測器200。 Next, a photodetector 100 manufactured by the manufacturing method of FIG. 3A-3B is joined to a reference photodetector 100R manufactured by the third C-3D, and is completed as the second. The photodetector 200 is shown.

參閱第4A-4B圖，其係顯示依據本發明之另一實施例，利用晶圓級製程製造第2圖的光偵測器200的中間階段之剖面示意圖。如第3A圖所示，首先提供具有多個光致變色玻璃區107與多個透明玻璃區109交錯排列的玻璃基板120，其中每一個光致變色玻璃區107至少鄰接一個透明玻璃區109，此玻璃基板120的尺寸與後續進行接合的晶圓102的尺寸相當。 Referring to Figures 4A-4B, there is shown a cross-sectional view of an intermediate stage of fabricating the photodetector 200 of Figure 2 using a wafer level process in accordance with another embodiment of the present invention. As shown in FIG. 3A, a glass substrate 120 having a plurality of photochromic glass regions 107 interlaced with a plurality of transparent glass regions 109 is first provided, wherein each photochromic glass region 107 is adjacent to at least one transparent glass region 109, The size of the glass substrate 120 is comparable to the size of the wafer 102 to be subsequently bonded.

在玻璃基板120的下方提供晶圓102，晶圓102的材料可以是矽基底101，並且在矽基底101上形成有多個感光半導體元件103，這些感光半導體元件103為相同的感光半導體元件，例如為互補式金氧半導體(CMOS)感光元件。在一實施例中，先於晶圓102上黏著間隔層105，間隔層105具有多個空隙105C，然後利用接合製程110將玻璃基板120與晶圓102接合在一起，接合後的結構如第4B圖所 示，其中每一個光致變色玻璃區107分別對應至一個感光半導體元件103，並且每一個透明玻璃區109也分別對應至一個感光半導體元件103，光致變色玻璃區107所對應的感光半導體元件103與透明玻璃區109所對應的感光半導體元件103是屬於相同的感光半導體元件。 A wafer 102 is provided under the glass substrate 120. The material of the wafer 102 may be a germanium substrate 101, and a plurality of photosensitive semiconductor elements 103 are formed on the germanium substrate 101. These photosensitive semiconductor elements 103 are the same photosensitive semiconductor elements, for example It is a complementary metal oxide semiconductor (CMOS) photosensitive element. In one embodiment, the spacer layer 105 is adhered to the wafer 102, the spacer layer 105 has a plurality of voids 105C, and then the glass substrate 120 and the wafer 102 are bonded together by a bonding process 110. The bonded structure is as shown in FIG. 4B. Map Each of the photochromic glass regions 107 corresponds to one photosensitive semiconductor element 103, and each of the transparent glass regions 109 also corresponds to one photosensitive semiconductor element 103, respectively. The photosensitive semiconductor element 103 corresponding to the photochromic glass region 107 is shown. The photosensitive semiconductor element 103 corresponding to the transparent glass region 109 belongs to the same photosensitive semiconductor element.

於接合製程110進行之後，間隔層105位於玻璃基板120與晶圓102之間，並且在玻璃基板120的光致變色玻璃區107與感光半導體元件103之間產生被間隔層105所圍繞的空隙105C，以及在透明玻璃區109與感光半導體元件103之間也產生被間隔層105圍繞的空隙105C。 After the bonding process 110 is performed, the spacer layer 105 is located between the glass substrate 120 and the wafer 102, and a gap 105C surrounded by the spacer layer 105 is generated between the photochromic glass region 107 of the glass substrate 120 and the photosensitive semiconductor element 103. And a gap 105C surrounded by the spacer layer 105 is also generated between the transparent glass region 109 and the photosensitive semiconductor element 103.

在另一實施例中，也可以先將間隔層105黏著在玻璃基板120的內側表面上，然後再將玻璃基板120與晶圓102進行接合。 In another embodiment, the spacer layer 105 may be adhered to the inner surface of the glass substrate 120, and then the glass substrate 120 is bonded to the wafer 102.

之後，以一個光致變色玻璃區107和一個透明玻璃區109為一個切割單位，沿著切割線112對接合後的玻璃基板120與晶圓102進行切割製程，使得切割後的每一個單位都含有一個光偵測器100和一個參考用光偵測器100R，形成複數個如第2圖所示之光偵測器200。 Thereafter, a photochromic glass region 107 and a transparent glass region 109 are used as a cutting unit, and the bonded glass substrate 120 and the wafer 102 are cut along the cutting line 112 so that each unit after cutting includes A photodetector 100 and a reference photodetector 100R form a plurality of photodetectors 200 as shown in FIG.

依據本發明之實施例，使用光致變色玻璃與由矽基底材料形成的感光半導體元件組合成光偵測器，利用光致變色玻璃接收紫外光、紅外光或其他波段的光會變色的特性，藉由感光半導體元件感測通過光致變色玻璃的可見光波段的通過量，據以產生感測信號，以偵測出環境中紫外光、紅外光或其他波段的光之強度大小。 According to an embodiment of the present invention, a photochromic glass is combined with a photosensitive semiconductor element formed of a ruthenium base material to form a photodetector, and the photochromic glass is used to receive characteristics of discoloration of ultraviolet light, infrared light, or other wavelengths of light. The photosensitive semiconductor element senses the amount of light passing through the visible light band of the photochromic glass, thereby generating a sensing signal to detect the intensity of light in the environment, such as ultraviolet light, infrared light, or other wavelength bands.

由矽基底材料形成的感光半導體元件對於感測可見光 波段的靈敏度高，本發明之實施例的光偵測器藉由感測通過光致變色玻璃的可見光波段的通過量進而推算出環境中紫外光、紅外光或其他波段的光之強度大小，如此可使得本發明之實施例的光偵測器更準確地偵測出環境中紫外光、紅外光或其他波段的光之強度大小。 Photosensitive semiconductor element formed of a base material for sensing visible light The sensitivity of the wavelength band is high, and the photodetector of the embodiment of the present invention estimates the intensity of ultraviolet light, infrared light or other wavelengths in the environment by sensing the throughput of the visible light band passing through the photochromic glass. The photodetector of the embodiment of the present invention can more accurately detect the intensity of ultraviolet light, infrared light or other wavelengths of light in the environment.

此外，由矽基底材料形成的感光半導體元件之材料成本相較於三五族金屬之半導體材料的成本低，因此，本發明之實施例的光偵測器除了可以準確地偵測出環境中紫外光、紅外光或其他波段的光之強度大小，還可以大幅地降低光偵測器的製造成本。 In addition, the material cost of the photosensitive semiconductor device formed of the base material is lower than that of the semiconductor material of the tri-five metal. Therefore, the photodetector of the embodiment of the present invention can accurately detect the ultraviolet in the environment. The intensity of light in the light, infrared or other bands can also greatly reduce the manufacturing cost of the photodetector.

雖然本發明已揭露較佳實施例如上，然其並非用以限定本發明，任何熟悉此項技藝者，在不脫離本發明之精神和範圍內，當可做些許更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定為準。 Although the present invention has been disclosed in its preferred embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached.

100、200‧‧‧光偵測器 100, 200‧‧‧ light detector

100R‧‧‧參考用光偵測器 100R‧‧‧ reference light detector

101‧‧‧矽基底 101‧‧‧矽Base

102‧‧‧晶圓 102‧‧‧ wafer

103‧‧‧感光半導體元件 103‧‧‧Photosensitive semiconductor components

105‧‧‧間隔層 105‧‧‧ spacer

105C‧‧‧空隙 105C‧‧‧ gap

107‧‧‧光致變色玻璃 107‧‧‧Photochromic glass

109‧‧‧透明玻璃 109‧‧‧clear glass

110‧‧‧接合製程 110‧‧‧ joining process

112‧‧‧切割線 112‧‧‧ cutting line

120‧‧‧具有多個光致變色玻璃區與多個透明玻璃區的玻璃基板 120‧‧‧ glass substrate with multiple photochromic glass regions and multiple transparent glass regions

第1圖係顯示依據本發明之一實施例，光偵測器的剖面示意圖。 1 is a cross-sectional view showing a photodetector in accordance with an embodiment of the present invention.

第2圖係顯示依據本發明另一實施例，光偵測器的剖面示意圖。 Figure 2 is a cross-sectional view showing a photodetector in accordance with another embodiment of the present invention.

第3A-3B圖顯示依據本發明之一實施例，製造第1圖的光偵測器的中間階段之剖面示意圖。 3A-3B are cross-sectional views showing intermediate stages of fabricating the photodetector of Fig. 1 in accordance with an embodiment of the present invention.

第3C-3D圖顯示依據本發明之一實施例，製造第2圖的光偵測器中的參考用光偵測器的中間階段之剖面示意圖。 3C-3D is a cross-sectional view showing the intermediate stage of the reference photodetector in the photodetector of FIG. 2, in accordance with an embodiment of the present invention.

第4A-4B圖係顯示依據本發明之另一實施例，製造第2圖的光偵測器的中間階段之剖面示意圖。 4A-4B is a cross-sectional view showing the intermediate stage of fabricating the photodetector of Fig. 2 in accordance with another embodiment of the present invention.

100‧‧‧光偵測器 100‧‧‧Photodetector

101‧‧‧矽基底 101‧‧‧矽Base

103‧‧‧感光半導體元件 103‧‧‧Photosensitive semiconductor components

105‧‧‧間隔層 105‧‧‧ spacer

105C‧‧‧空隙 105C‧‧‧ gap

107‧‧‧光致變色玻璃 107‧‧‧Photochromic glass

Claims (14)

一種光偵測器，包括：一光致變色玻璃，其接收一第一波段的光而變色，進而影響一可見光波段的通過量；一第一感光半導體元件，設置於該光致變色玻璃下方，感測通過該光致變色玻璃的該可見光波段，據以產生一第一感測信號；一透明玻璃，鄰接該光致變色玻璃而設置；以及一第二感光半導體元件，設置於該透明玻璃下方，感測一環境中通過該透明玻璃的該可見光波段，據以產生一第二感測信號，其中經由該第一感測信號與該第二感測信號之間的差異值，以偵測該環境中的該第一波段的光強度。 A photodetector comprising: a photochromic glass that receives a first band of light and discolors, thereby affecting the throughput of a visible light band; a first photosensitive semiconductor component disposed under the photochromic glass, Sensing the visible light band of the photochromic glass to generate a first sensing signal; a transparent glass disposed adjacent to the photochromic glass; and a second photosensitive semiconductor element disposed under the transparent glass Sensing an visible light band passing through the transparent glass in an environment, thereby generating a second sensing signal, wherein a difference value between the first sensing signal and the second sensing signal is used to detect the difference The light intensity of the first band in the environment. 如申請專利範圍第1項所述之光偵測器，其中該第一波段的光包括紫外光或紅外光。 The photodetector of claim 1, wherein the light of the first wavelength band comprises ultraviolet light or infrared light. 如申請專利範圍第1項所述之光偵測器，其中該第一感光半導體元件與該第二感光半導體元件為相同的感光半導體元件，且該第一與該第二感光半導體元件包括形成在矽基底中的互補式金氧半導體元件。 The photodetector of claim 1, wherein the first photosensitive semiconductor element and the second photosensitive semiconductor element are the same photosensitive semiconductor element, and the first and second photosensitive semiconductor elements are formed in A complementary MOS device in the ruthenium substrate. 如申請專利範圍第1項所述之光偵測器，更包括一間隔層設置在該光致變色玻璃與該第一感光半導體元件之間，以及設置在該透明玻璃與該第二感光半導體元件之間，其中該間隔層圍繞一介於該光致變色玻璃與該感光半導體元件之間的空隙，以及圍繞一介於該透明玻璃與該第 二感光半導體元件之間的空隙。 The photodetector of claim 1, further comprising a spacer layer disposed between the photochromic glass and the first photosensitive semiconductor element, and disposed on the transparent glass and the second photosensitive semiconductor element Between the spacer layer surrounding a gap between the photochromic glass and the photosensitive semiconductor element, and surrounding a transparent glass and the first A gap between the two photosensitive semiconductor elements. 一種光偵測器的製造方法，包括：提供一光致變色玻璃；提供一第一晶圓，具有複數個第一感光半導體元件形成於其上；將該光致變色玻璃與該第一晶圓接合；切割該光致變色玻璃與該第一晶圓，以分離該些第一感光半導體元件，形成複數個第一光偵測器；提供一透明玻璃；提供一第二晶圓，具有複數個第二感光半導體元件形成於其上；將該透明玻璃與該第二晶圓接合；切割該透明玻璃與該第二晶圓，以分離該些第二感光半導體元件，形成複數個第二光偵測器；以及將一個該第一光偵測器與一個該第二光偵測器相鄰接合在一起，使得該光致變色玻璃鄰接該透明玻璃，並且該第一感光半導體元件鄰接該第二感光半導體元件。 A method of manufacturing a photodetector, comprising: providing a photochromic glass; providing a first wafer having a plurality of first photosensitive semiconductor elements formed thereon; and the photochromic glass and the first wafer Engaging the photochromic glass and the first wafer to separate the first photosensitive semiconductor elements to form a plurality of first photodetectors; providing a transparent glass; providing a second wafer having a plurality of Forming a second photosensitive semiconductor element thereon; bonding the transparent glass to the second wafer; cutting the transparent glass and the second wafer to separate the second photosensitive semiconductor elements to form a plurality of second optical detectors And a first photodetector and a second photodetector are adjacently joined together such that the photochromic glass abuts the transparent glass, and the first photosensitive semiconductor element abuts the second Photosensitive semiconductor component. 如申請專利範圍第5項所述之光偵測器的製造方法，更包括在接合該光致變色玻璃與該第一晶圓的該步驟之前，提供一間隔層黏著於該光致變色玻璃或該第一晶圓上，並且於該光致變色玻璃與該第一晶圓接合之後，該間隔層位於該光致變色玻璃與該第一晶圓之間。 The method of manufacturing a photodetector according to claim 5, further comprising providing a spacer layer adhered to the photochromic glass or before the step of bonding the photochromic glass and the first wafer On the first wafer, and after the photochromic glass is bonded to the first wafer, the spacer layer is located between the photochromic glass and the first wafer. 如申請專利範圍第5項所述之光偵測器的製造方法，更包括在接合該透明玻璃與該第二晶圓的該步驟之前，提供一間隔層黏著於該透明玻璃或該第二晶圓上，並 且於該透明玻璃與該第二晶圓接合之後，該間隔層位於該透明玻璃與該第二晶圓之間。 The method for manufacturing a photodetector according to claim 5, further comprising providing a spacer layer adhered to the transparent glass or the second crystal before the step of bonding the transparent glass and the second wafer Round and And after the transparent glass is bonded to the second wafer, the spacer layer is located between the transparent glass and the second wafer. 如申請專利範圍第5項所述之光偵測器的製造方法，其中該些第一感光半導體元件與該些第二感光半導體元件為相同的感光半導體元件，且該些第一與該些第二感光半導體元件包括形成在矽基底中的互補式金氧半導體元件。 The method of manufacturing a photodetector according to claim 5, wherein the first photosensitive semiconductor component and the second photosensitive semiconductor component are the same photosensitive semiconductor component, and the first and the first The two photosensitive semiconductor element includes a complementary MOS device formed in a germanium substrate. 一種光偵測器的製造方法，包括：提供一包含複數個光致變色玻璃區與複數個透明玻璃區的玻璃基板，其中每一個該光致變色玻璃區至少鄰接一個透明玻璃區；提供一晶圓，具有複數個感光半導體元件形成於其上；將該玻璃基板與該晶圓接合，其中每一個該光致變色玻璃區分別對應至一個該感光半導體元件，並且每一個該透明玻璃區分別對應至一個該感光半導體元件；以及以一個該光致變色玻璃區和一個該透明玻璃區為一個切割單位，切割該玻璃基板與該晶圓，形成複數個光偵測器。 A method of fabricating a photodetector, comprising: providing a glass substrate comprising a plurality of photochromic glass regions and a plurality of transparent glass regions, wherein each of the photochromic glass regions is adjacent to at least one transparent glass region; providing a crystal a circular body having a plurality of photosensitive semiconductor elements formed thereon; the glass substrate being bonded to the wafer, wherein each of the photochromic glass regions respectively corresponds to one of the photosensitive semiconductor elements, and each of the transparent glass regions corresponds to To a photosensitive semiconductor element; and cutting the glass substrate and the wafer with a photochromic glass region and a transparent glass region as a cutting unit to form a plurality of photodetectors. 如申請專利範圍第9項所述之光偵測器的製造方法，更包括在接合該玻璃基板與該晶圓的該步驟之前，提供一間隔層黏著於該玻璃基板或該晶圓上，並且於該玻璃基板與該晶圓接合之後，該間隔層位於該玻璃基板與該晶圓之間。 The method for manufacturing a photodetector according to claim 9, further comprising providing a spacer layer adhered to the glass substrate or the wafer before the step of bonding the glass substrate and the wafer, and After the glass substrate is bonded to the wafer, the spacer layer is located between the glass substrate and the wafer. 如申請專利範圍第10項所述之光偵測器的製造方法，其中該間隔層具有複數個空隙，並且於該玻璃基板與 該晶圓接合之後，該些空隙介於該些光致變色玻璃區與該些感光半導體元件之間，以及介於該些透明玻璃區與該些感光半導體元件之間。 The method of manufacturing a photodetector according to claim 10, wherein the spacer layer has a plurality of voids, and is on the glass substrate After the wafer is bonded, the voids are interposed between the photochromic glass regions and the photosensitive semiconductor elements, and between the transparent glass regions and the photosensitive semiconductor elements. 如申請專利範圍第9項所述之光偵測器的製造方法，其中該些感光半導體元件包括形成在矽基底中的互補式金氧半導體元件。 The method of fabricating a photodetector according to claim 9, wherein the photo-sensing semiconductor device comprises a complementary MOS device formed in a ruthenium substrate. 如申請專利範圍第9項所述之光偵測器的製造方法，其中每一個該光偵測器包含一個該光致變色玻璃區和一個該透明玻璃區，以及兩個相鄰的感光半導體元件分別對應至該光致變色玻璃區和該透明玻璃區。 The method of manufacturing a photodetector according to claim 9, wherein each of the photodetectors comprises a photochromic glass region and a transparent glass region, and two adjacent photosensitive semiconductor elements. Corresponding to the photochromic glass zone and the transparent glass zone, respectively. 如申請專利範圍第13項所述之光偵測器的製造方法，其中相鄰的兩個感光半導體元件為相同的感光半導體元件。 The method of manufacturing a photodetector according to claim 13, wherein the adjacent two photosensitive semiconductor elements are the same photosensitive semiconductor element.
TW101124362A 2012-07-06 2012-07-06 Photo detectors and fabrication methods thereof TWI528533B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101124362A TWI528533B (en) 2012-07-06 2012-07-06 Photo detectors and fabrication methods thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101124362A TWI528533B (en) 2012-07-06 2012-07-06 Photo detectors and fabrication methods thereof

Publications (2)

Publication Number Publication Date
TW201403800A TW201403800A (en) 2014-01-16
TWI528533B true TWI528533B (en) 2016-04-01

Family

ID=50345640

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101124362A TWI528533B (en) 2012-07-06 2012-07-06 Photo detectors and fabrication methods thereof

Country Status (1)

Country Link
TW (1) TWI528533B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014111945A1 (en) * 2014-05-19 2015-11-19 Zentrum Mikroelektronik Dresden Ag Functional unit with radiopaque agents

Also Published As

Publication number Publication date
TW201403800A (en) 2014-01-16

Similar Documents

Publication Publication Date Title
US8274051B1 (en) Method and device for optoelectronic sensors with IR blocking filter
US8809099B2 (en) Light sensor having IR cut interference filter with color filter integrated on-chip
US8803270B2 (en) Light sensor having IR cut and color pass interference filter integrated on-chip
US20160099280A1 (en) Image sensors and methods of forming the same
JP2017514228A5 (en)
TW200840030A (en) Ambient light detectors using conventional CMOS image sensor process
JP2007227546A (en) Photodetector
US9425228B2 (en) Image sensor with reduced optical path
US10132679B2 (en) Ultraviolet sensor having filter
JP2006245264A (en) Integrated circuit equipped with semiconductor light receiving element
TWI578397B (en) A method of manufacturing a medium that can not penetrate a radiation for a functional element
TWI528533B (en) Photo detectors and fabrication methods thereof
CN104505410A (en) Photoelectric diode, ultraviolet detector integrated circuit and manufacturing method thereof
US20100044821A1 (en) Semiconductor device and manufacturing method thereof
RU166459U1 (en) TANDEM STRUCTURE OF A TWO-CHANNEL INFRARED RADIATION RECEIVER
KR20120115887A (en) Pixel, pixel array and image sensor inclduding the pixel array
JP2003224292A (en) Semiconductor photodetector
JP2014203877A (en) Optical detector
US8608894B2 (en) Wafer level packaged focal plane array
JP2007292486A (en) Optical sensor and object detection method
JPH01292220A (en) Semiconductor light detector
TW201401540A (en) Ultra-violet light sensing device and manufacturing method thereof
JP6994882B2 (en) Method for manufacturing ultraviolet light receiving element and ultraviolet light receiving element
JP2019113519A (en) Spectrum measuring device and manufacturing method thereof
JP2004214341A (en) Semiconductor photo detection device