TWI528104B - Photomask - Google Patents
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- TWI528104B TWI528104B TW101127908A TW101127908A TWI528104B TW I528104 B TWI528104 B TW I528104B TW 101127908 A TW101127908 A TW 101127908A TW 101127908 A TW101127908 A TW 101127908A TW I528104 B TWI528104 B TW I528104B
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Description
本發明係關於一種將光線選擇性地照射於朝一定方向搬送之被曝光基板表面所形成之被曝光圖案之光罩，詳而言之，係一種於該被曝光基板之搬送方向的上游側及下游側的端部形成2個觀測窗，並藉由分別於觀測窗設置對位標記而可將被曝光圖案配向於分別的兩方向來進行曝光之光罩。 The present invention relates to a mask for selectively exposing light to an exposed pattern formed on a surface of an exposed substrate that is transported in a certain direction, and more particularly, to an upstream side of a transport direction of the exposed substrate and The end portion on the downstream side forms two observation windows, and the photomask that can be exposed by aligning the exposed patterns in two directions by providing alignment marks on the observation window, respectively.
以往的光罩，係具備有以一定的配列間距形成於被曝光基板之搬送方向(以下僅稱為「搬送方向」)的交叉方向來讓光線通過之複數遮罩圖案，以及一個對位標記，係構成為具備有相等於被曝光基板上所設置之複數曝光圖案之與該搬送方向交叉方向的配列間距之整數倍的間隔而平行第形成於搬送方向之一對細線，並相對於複數遮罩圖案以一定距離遠離之位置形成於搬送方向之上游側(例如，參照日本特開2008-216593號公報)。 The conventional mask has a plurality of mask patterns for allowing light to pass through in a direction in which a predetermined arrangement pitch is formed in a transport direction of the substrate to be exposed (hereinafter simply referred to as "transport direction", and an alignment mark. The structure is configured to have an interval which is equal to an integral multiple of the arrangement pitch of the plurality of exposure patterns provided on the substrate to be exposed in the direction intersecting the transport direction, and is formed in parallel with the pair of thin lines in the transport direction, and is opposite to the plurality of masks The pattern is formed on the upstream side in the transport direction at a position away from the fixed distance (for example, refer to Japanese Laid-Open Patent Publication No. 2008-216593).
又，作為其他光罩，有可適用於液晶元件之彩色濾光片之曝光及配向膜之光配向等，較佳為形成條紋狀之遮罩圖案之光罩(例如，參照日本特開2008-164729號公報)。 Further, as the other mask, there is an exposure of a color filter suitable for a liquid crystal element, and an optical alignment of an alignment film, etc., and a mask having a stripe-shaped mask pattern is preferable (for example, refer to JP-A-2008- Bulletin No. 164729).
然而，日本特開2008-216593號公報所記載之光罩中，由於對位標記平行於搬送方向之一對細線間隔係等同於被曝光基板上所設置之複數被曝光圖案之搬送方向的交叉方向之配列間距的整數倍，因此在將光線照射於同種基板之搬送方向的交叉方向之偏移位置的情況，對位標記之上述一對細線 會與基板上之圖案平行於搬送方向之緣部干涉而難以檢測出，而有無法正確地檢測出對位標記之基準位置的情況。因此，便會使得相對於光罩之基板的追隨性能降低而有無法使得光線精度良好地照射至基板上的目標位置之虞。 In the photomask described in Japanese Laid-Open Patent Publication No. 2008-216593, the alignment mark is parallel to one of the transport directions, and the thin line interval is equivalent to the intersecting direction of the transport direction of the plurality of exposed patterns provided on the substrate to be exposed. Since the arrangement pitch is an integral multiple of the pitch, when the light is irradiated to the offset position in the intersecting direction of the transport direction of the same substrate, the pair of thin lines of the alignment mark are The pattern on the substrate interferes with the edge of the transport direction and is difficult to detect, and the reference position of the alignment mark cannot be accurately detected. Therefore, the tracking performance with respect to the substrate of the photomask is lowered, and there is a possibility that the light is not accurately irradiated onto the target position on the substrate.
尤其是在日本特開2008-164729號公報所記載之光罩中，在基板所形成之圖案為配向於兩方向來進行曝光的情況，必須在搬送位置之交叉方向的偏移位置來將光線照射到條紋狀的圖案，便難以正確地檢測出對位標記的基準位置，會使得相對於光罩之基板的追隨性能降低而有無法使得光線精度良好地照射至基板上的目標位置之虞。 In the photomask described in Japanese Laid-Open Patent Publication No. 2008-164729, in the case where the pattern formed on the substrate is exposed in two directions, it is necessary to irradiate the light at an offset position in the intersecting direction of the transport position. When the pattern is striped, it is difficult to accurately detect the reference position of the alignment mark, and the tracking performance with respect to the substrate of the photomask is lowered, so that the light is not accurately irradiated onto the target position on the substrate.
因此，要藉由同一光罩配向於兩方向來進行曝光乃有所困難，在將基板所形成之被曝光圖案配向於兩方向來進行曝光的情況，便必須要有準備對應於各自配向方向之不同光罩之工作。 Therefore, it is difficult to perform exposure by aligning the same reticle in two directions. In the case where the exposed pattern formed by the substrate is aligned in two directions for exposure, it is necessary to prepare for the respective alignment directions. Different reticle work.
此處，對應於此般問題，本發明所欲解決之課題即為提供一種光罩，可將被曝光圖案分別配向於兩方向來進行曝光。 Here, in order to solve the above problems, the problem to be solved by the present invention is to provide a photomask capable of exposing the exposed patterns to two directions.
為了解決上述課題，第1發明之光罩乃係將光線選擇性地照射於朝一定方向搬送之被曝光基板表面所形成之被曝光圖案，其特徵在於構成為包含有：複數遮罩圖案，係以一定的配列間距形成於該被曝光基板之搬送方向的交叉方向，而讓光線通過；第1觀測窗，係形成於該搬送方向之上游側端部；第2觀測窗，係夾置該遮罩圖案而形成於該搬送方向之下游側端部；第1對位標記，係於第1觀測窗以具有相等於該 遮罩圖案之配列間距之整數倍的間距設置於該搬送方向之交叉方向；以及第2對位標記，係於第2觀測窗以具有相等於該遮罩圖案之配列間距之整數倍的間距設置於該搬送方向之交叉方向；該第2對位標記係相對於該第1對位標記位移有該遮罩圖案之配列間距之整數倍尺寸而形成於該搬送方向之交叉方向。 In order to solve the above-described problems, the photomask according to the first aspect of the invention is an exposure pattern formed by selectively irradiating light onto a surface of an exposed substrate that is transported in a predetermined direction, and is characterized in that a plurality of mask patterns are included. The light is allowed to pass through the intersecting direction of the transport direction of the substrate to be exposed at a constant arrangement pitch; the first observation window is formed at the upstream end of the transport direction; and the second observation window is sandwiched by the cover. a cover pattern is formed at a downstream end portion of the transport direction; the first alignment mark is equal to the first observation window The pitch of an integral multiple of the arrangement pitch of the mask patterns is set in the intersecting direction of the transport direction; and the second alignment mark is set at a pitch equal to an integral multiple of the arrangement pitch of the mask pattern in the second observation window. In the intersecting direction of the transport direction, the second alignment mark is formed in the intersecting direction of the transport direction by shifting an integral multiple of the arrangement pitch of the mask pattern with respect to the first alignment mark.
藉由此般結構，首先藉由一邊檢測出第1觀測窗所設置之第1對位標記，一邊將被曝光基板曝光，來將被曝光基板之表面所形成之被曝光圖案的一部分配向於一方向。之後，藉由一邊檢測出將方向反轉後之光罩的第2觀測窗所設置之第2標記，一邊將被曝光基板曝光，來將被曝光圖案之一部分或全部配向於相反方向。 With this configuration, first, by exposing the exposed substrate to the first alignment mark provided in the first observation window, a part of the exposed pattern formed on the surface of the substrate to be exposed is aligned. direction. Thereafter, the exposed substrate is exposed while detecting the second mark provided in the second observation window of the mask after the direction is reversed, and part or all of the exposed pattern is aligned in the opposite direction.
又，該遮罩圖案之配列間距與該被曝光圖案之配列間距為相同尺寸，該被曝光基板之搬送方向之交叉方向的該遮罩圖案之寬度為該遮罩圖案之配列間距的1/2倍。藉此，首先藉由一邊檢測出第1觀測窗所設置之第1對位標記，一邊將被曝光基板曝光，來將被曝光基板之表面所形成之被曝光圖案的一部分配向於一方向。之後，藉由一邊檢測出將方向反轉後之光罩的第2觀測窗所設置之第2標記，一邊將被曝光基板曝光，來將被曝光圖案之尚未配向的部分配向於相反方向。 Moreover, the arrangement pitch of the mask pattern and the arrangement pitch of the exposed pattern are the same size, and the width of the mask pattern in the direction in which the substrate is conveyed in the direction of the transfer is 1/2 of the arrangement pitch of the mask pattern. Times. Thereby, first, the exposed substrate is exposed while detecting the first alignment mark provided in the first observation window, and a part of the exposed pattern formed on the surface of the substrate to be exposed is aligned in one direction. Thereafter, the exposed substrate is exposed while detecting the second mark provided in the second observation window of the mask after the direction is reversed, and the unaligned portion of the exposed pattern is aligned in the opposite direction.
再者，該第1對位標記及第2對位標記係設置於包含有相對於該遮罩圖案之該搬送方向而平行之緣部的直線上，於曝光該被曝光基板之情況，係相對於該被曝光 圖案之該搬送方向而被對位於所交叉方向之中央部。藉此，首先藉由一邊檢測出第1觀測窗所設置之第1對位標記，一邊將被曝光基板曝光，來將被曝光基板表面所形成之被曝光圖案的一側(相對於搬送方向之右側或左側)一半配向於一方向。之後，藉由一邊檢測出將方向反轉後之光罩的第2觀測窗所設置之第2標記，一邊將被曝光基板曝光，來將被曝光基板之尚未配向的相反側(相對於搬送方向之左側或右側)一半配向於相反方向。 Further, the first alignment mark and the second alignment mark are provided on a line including an edge portion parallel to the conveyance direction of the mask pattern, and when exposed to the exposed substrate, relative to each other Be exposed The conveyance direction of the pattern is opposed to the central portion in the intersecting direction. By first detecting the first alignment mark provided in the first observation window, the exposed substrate is exposed to expose the exposed pattern formed on the surface of the substrate to be exposed (relative to the transport direction). The right side or the left side is half aligned in one direction. After that, the exposed substrate is exposed while detecting the second mark provided in the second observation window of the mask after the direction is reversed, and the opposite side of the substrate to be exposed (with respect to the transport direction) is opposed. The left or right side is half aligned in the opposite direction.
第2發明之光罩乃係將光線選擇性地照射於朝一定方向搬送之被曝光基板表面所形成之被曝光圖案，其特徵在於構成為包含有：複數遮罩圖案，係以一定的配列間距形成於該被曝光基板之搬送方向的交叉方向，而讓光線通過；第1觀測窗，係形成於該搬送方向之上游側端部；第2觀測窗，係相對於該第1觀測窗而鄰接形成於該搬送方向下游側；第1對位標記，係於第1觀測窗以具有相等於該遮罩圖案之配列間距之整數倍的間距設置於該搬送方向之交叉方向；以及第2對位標記，係於第2觀測窗以具有相等於該遮罩圖案之配列間距之整數倍的間距設置於該搬送方向之交叉方向；該第2對位標記係相對於該第1對位標記位移有該遮罩圖案之配列間距之1/2倍尺寸而形成於該搬送方向之交叉方向。 The photomask according to the second aspect of the invention is an exposure pattern formed by selectively irradiating light onto a surface of an exposed substrate that is transported in a predetermined direction, and is characterized in that: a plurality of mask patterns are included, and a predetermined arrangement pitch is included The first observation window is formed at an upstream end of the transport direction in a direction intersecting the transport direction of the substrate to be exposed, and the second observation window is adjacent to the first observation window. Formed on the downstream side in the transport direction; the first alignment mark is provided in the first observation window at a pitch equal to an integral multiple of the arrangement pitch of the mask pattern in the direction in which the transport direction intersects; and the second alignment The mark is disposed in the second observation window at a pitch equal to an integral multiple of the arrangement pitch of the mask pattern in the intersecting direction of the transport direction; the second alignment mark is displaced relative to the first alignment mark The mask pattern has a size of 1/2 of the arrangement pitch and is formed in the direction in which the conveyance direction intersects.
藉由此般結構，首先藉由一邊檢測出第1觀測窗所設置之第1對位標記，一邊將被曝光基板曝光，來將被曝光基板之表面所形成之被曝光圖案的一部分配向於一 方向。之後，將光罩於被曝光基板之搬送方向的交叉方向偏移光罩之搬送方向的交叉方向之配列間距的1/2倍的尺寸，而藉由一邊檢測出將方向反轉後之光罩的第2觀測窗所設置之第2標記，一邊將被曝光基板曝光，來將被曝光圖案尚未配向部分的一部分或全部配向於相反方向。 With this configuration, first, by exposing the exposed substrate to the first alignment mark provided in the first observation window, a part of the exposed pattern formed on the surface of the substrate to be exposed is aligned. direction. Thereafter, the reticle is offset from the intersecting direction of the transport direction of the substrate to be exposed by 1/2 times the pitch of the intersecting direction of the transport direction of the reticle, and the reticle that reverses the direction is detected while detecting The second mark provided in the second observation window exposes a part of the unexposed portion of the exposed pattern to the opposite direction while exposing the substrate to be exposed.
以下，便基於所添附圖式就本發明之實施形態加以詳細說明。 Hereinafter, embodiments of the present invention will be described in detail based on the attached drawings.
圖1係顯示第1發明之光罩1實施形態的概略圖。此光罩1係將用於液晶畫面之彩色濾光片基板等之被曝光基板2(參照圖4)朝一定方向搬送並曝光之際，將曝光光線選擇性地照射於該被曝光基板2表面所形成之例如紅、綠、藍各色的像素等之被曝光圖案21，如圖1所示，係構成為包含有：遮罩圖案11、第1觀測窗12、第2觀測窗13、第1對位標記14以及第2對位標記15。 Fig. 1 is a schematic view showing an embodiment of a reticle 1 according to a first aspect of the invention. In the reticle 1 , when the exposed substrate 2 (see FIG. 4 ) such as a color filter substrate for a liquid crystal screen is transported in a predetermined direction and exposed, the exposure light is selectively irradiated onto the surface of the exposed substrate 2 . As shown in FIG. 1, the exposed pattern 21 such as pixels of red, green, and blue colors is formed to include a mask pattern 11, a first observation window 12, a second observation window 13, and a first The alignment mark 14 and the second alignment mark 15 are provided.
該遮罩圖案11係會讓來自曝光光源所照射之曝光光線通過，來用以選擇性地照射於被曝光基板2之表面者，係以一定的配列間距複數地形成於被曝光基板2之搬送方向A(以下僅稱為「搬送方向A」)之交叉方向，亦即搬送方向A之垂直方向(以下僅稱為「寬度方向」)，並沿著該搬送方向A以一定的配列間距形成有1個或複數個，整體來說則形成為陣列狀。各遮罩圖案11之形狀乃係由平行於該搬送方向A之短邊與平行於寬度方 向之長邊所構成之略長方形，如圖2所示，平行於此寬度方向之長邊的尺寸W為寬度方向之該配列間距的1/2。此寬度方向之配列間距P1如圖4所示，雖係與後述被曝光基板2之表面所形成之被曝光圖案21的寬度方向之配列間距P2為相同尺寸，但亦可以為被曝光圖案21的寬度方向之配列間距P2的1/2倍或1/3倍等之整數份的1倍，對應於用途加以任意選擇即可。又，沿著遮罩圖案11之搬送方向A的配列間距P3如圖5所示，雖係與後述被曝光圖案21之搬送方向之配列間距P4為相同尺寸，但亦可以為被曝光圖案21的搬送方向A之配列間距P4的2倍或3倍等之整數倍，對應於用途加以任意選擇即可。例如，遮罩圖案11之搬送方向A的配列間距P3可以形成為較被曝光圖案21之搬送方向A的配列間距P4要長，而將於搬送方向A較長之長方形遮罩圖案11以一定的配列間距P1設置於寬度方向。 The mask pattern 11 allows the exposure light irradiated from the exposure light source to pass through, and is selectively applied to the surface of the substrate 2 to be exposed, and is formed on the substrate 2 to be exposed at a predetermined arrangement pitch. The direction of the direction A (hereinafter simply referred to as "transport direction A"), that is, the vertical direction of the transport direction A (hereinafter simply referred to as "width direction"), is formed along the transport direction A at a constant arrangement pitch. One or a plurality of them are formed in an array as a whole. The shape of each mask pattern 11 is a rectangle formed by a short side parallel to the transport direction A and a long side parallel to the width direction. As shown in FIG. 2, the dimension W of the long side parallel to the width direction is W. It is 1/2 of the arrangement pitch in the width direction. This width direction of the arranging pitch P 1 as shown in FIG arranging the widthwise direction of the exposed pattern is formed of the surface, although system described later is exposed substrate 2 of the 21 pitch 4 P 2 are the same size, but also that the exposed pattern The integral pitch P 2 of the width direction of 21 may be arbitrarily selected in accordance with the use, and may be arbitrarily selected in accordance with the use. And, along the mask pattern of conveyance 11 in the array direction A pitch P 3 shown in Figure 5, although the system described later the exposed pattern of conveyance 21 direction of the arranging pitch P 4 of the same size, but also that the exposed pattern An integral multiple of two or three times the arrangement pitch P 4 of the transport direction A of 21 may be arbitrarily selected depending on the application. For example, the arrangement pitch P 3 of the transport pattern A of the mask pattern 11 may be formed longer than the arrangement pitch P 4 of the transport direction A of the exposure pattern 21, and the rectangular mask pattern 11 which is longer in the transport direction A may be A certain arrangement pitch P 1 is set in the width direction.
又，此遮罩圖案11可藉由以一定之配列間距等間隔地複數形成於搬送方向A之交叉方向，並沿著搬送方向A形成有1個來整體地形成為條紋狀。 In addition, the mask pattern 11 can be formed in a stripe shape as a whole in the direction in which the transport direction A intersects at a constant interval, and is formed along the transport direction A.
如圖1所示，該光罩1的搬送方向A之上游側端部係設有第1觀測窗12。此第1觀測窗12係藉由後述之攝影機構來拍攝通過其下方之被曝光基板2，係形成於為搬來被曝光基板2側之光罩1的上游側端部(圖1中的下側端部)，而形成為於寬度方向上較長的長方形。此 第1觀測窗12可藉由攝影機構來拍攝通過其下方之被曝光基板2，其形狀不限於長方形，亦可為正方形或橢圓形。 As shown in FIG. 1, the first observation window 12 is provided at the upstream end of the conveyance direction A of the mask 1. The first observation window 12 is imaged by an imaging unit to be described later, and is formed on the upstream side end portion of the mask 1 on the side of the substrate 2 to be exposed (the lower side in FIG. 1). The side end portion is formed into a rectangular shape that is long in the width direction. this The first observation window 12 can capture the exposed substrate 2 passing therethrough by the photographing mechanism, and its shape is not limited to a rectangle, and may be a square or an ellipse.
該第1觀測窗12如圖2(a)所示，係設有第1對位標記14。此第1對位標記14係用以對位藉由攝影機構來拍攝而通過其下方之被曝光基板2者，係由平行於搬送方向A之細線所構成，並於包含有相對於該遮罩圖案11之搬送方向A而平行之緣部(短邊)的直線上，以具有相等於該遮罩圖案11之寬度方向的配列間距之間隔而形成3道於寬度方向。此第1對位標記14間之間隔可以為該遮罩圖案11之寬度方向配列間距P1的整數倍，對應於用途選擇任意的間隔即可。又，此第1對位標記14如圖4所示，於被曝光基板2曝光之際，係藉由設置於光罩1上方之攝影機構來加以拍攝，而被對位於通過光罩1下方之被曝光基板2表面所形成之被曝光圖案21之寬度方向的中央部。 As shown in FIG. 2(a), the first observation window 12 is provided with a first alignment mark 14. The first alignment mark 14 is used to align the substrate to be exposed by the photographing mechanism and pass through the exposed substrate 2 below, and is composed of a thin line parallel to the transport direction A, and is included with respect to the mask. On the straight line of the edge portion (short side) in which the pattern 11 is conveyed in the direction A and parallel, three lines are formed in the width direction at intervals of the arrangement pitch equal to the width direction of the mask pattern 11. The interval between the first alignment marks 14 may be an integral multiple of the pitch P1 in the width direction of the mask pattern 11, and an arbitrary interval may be selected depending on the application. Further, as shown in FIG. 4, when the exposed substrate 2 is exposed, the first alignment mark 14 is imaged by an imaging mechanism provided above the reticle 1, and is positioned to pass under the reticle 1. A central portion in the width direction of the exposed pattern 21 formed on the surface of the substrate 2 to be exposed.
另外，第1對位標記14之形狀不限於細線，只要是可藉由攝影機構來加以拍攝而對位之形狀即可，可選擇為例如十字線或點等。又，設置的個數乃對應於用途而為任意，亦可設置為例如1個。又，以此3道所形成之對位標記14不限於1處，亦可以等間距設置於複數處。 Further, the shape of the first registration mark 14 is not limited to a thin line, and may be any shape as long as it can be imaged by an imaging mechanism, and may be, for example, a cross line or a dot. Further, the number of the settings is arbitrary depending on the application, and may be set to, for example, one. Further, the alignment mark 14 formed by the three tracks is not limited to one place, and may be provided at a plurality of places at equal intervals.
再者，如圖1所示，於夾置該光罩1之第1觀測窗12及該遮罩圖案11之搬送方向A的下游側端部處設置有第2觀測窗13。此第2觀測窗13係藉由攝影機構拍攝 通過其下方之被曝光基板2者，係形成於被曝光基板2所被搬出側之光罩1的下游側端部(圖1中的上側端部)，而形成為與第1觀測窗12為相同形狀。此第2觀測窗13可藉由攝影機構來拍攝通過其下方之被曝光基板2，其形狀亦可以和第1觀測窗12為不同之形狀。 Further, as shown in FIG. 1, the second observation window 13 is provided at the downstream end portion of the first observation window 12 in which the mask 1 is interposed and the conveyance direction A of the mask pattern 11. The second observation window 13 is photographed by a photographing mechanism The substrate 2 to be exposed under the exposure substrate 2 is formed on the downstream end portion (the upper end portion in FIG. 1 ) of the mask 1 on the side on which the substrate 2 is to be exposed, and is formed in the first observation window 12 . The same shape. The second observation window 13 can capture the substrate 2 to be exposed passing therethrough by the photographing mechanism, and its shape can be different from that of the first observation window 12.
使用此第2觀測窗13來將被曝光基板2曝光之際，由於係將光罩1前後(搬送方向A之上游側及下游側)加以反轉來使用，故如圖7所示，第2觀測窗13便會來到搬送方向A的上游側。 When the second observation window 13 is used to expose the substrate 2 to be exposed, the front and back of the mask 1 (the upstream side and the downstream side of the transport direction A) are reversed and used. Therefore, as shown in FIG. The observation window 13 comes to the upstream side of the transport direction A.
該第2觀測窗13如圖2(b)所示，係設有第2對位標記15。此第2對位標記15係用以對位藉由攝影機構來拍攝而通過其下方之被曝光基板2者，係由平行於搬送方向A之細線所構成，並於包含有相對於該遮罩圖案11之搬送方向A而平行之緣部(短邊)的直線上，以具有相等於該遮罩圖案11之寬度方向的配列間距P1之間隔而形成3道於寬度方向。此第2對位標記15間之間隔可為該遮罩圖案11之寬度方向配列間距P1之整數倍，對應於用途來選擇任意之間隔即可。又，此第2對位標記15如圖7所示，於被曝光基板2曝光之際，係藉由光罩1上方所設置之攝影機構加以拍攝，而被對位於通過光罩1下方之被曝光基板2表面所形成之被曝光圖案21之寬度方向的中央部。 As shown in FIG. 2(b), the second observation window 13 is provided with a second alignment mark 15. The second alignment mark 15 is used to align the substrate to be exposed by the photographing mechanism and pass through the exposed substrate 2 below, and is composed of a thin line parallel to the transport direction A, and is included with respect to the mask. the conveying direction of the straight line pattern parallel a 11 of the edge portions (short side), the mask having a pattern equal to the width direction of the arranging pitch P of the interval 11 1 3 are formed in the width direction. The interval between the second alignment marks 15 may be an integral multiple of the pitch P 1 in the width direction of the mask pattern 11, and an arbitrary interval may be selected in accordance with the use. Further, as shown in FIG. 7, the second alignment mark 15 is photographed by the photographing mechanism provided above the mask 1 when exposed to the exposed substrate 2, and is positioned to be positioned below the mask 1. The central portion of the exposed pattern 21 formed on the surface of the substrate 2 in the width direction is exposed.
另外，第2對位標記15之形狀不限於細線，只要是可藉由攝影機構來加以拍攝而對位之形狀即可，可選擇為 例如十字線或點等。又，設置的個數乃對應於用途而為任意，亦可設置為例如1個。又，以此3道所形成之對位標記15不限於1處，亦可以等間距設置於複數處。 Further, the shape of the second registration mark 15 is not limited to the thin line, and may be any shape as long as it can be imaged by the photographing mechanism. For example, a crosshair or a point. Further, the number of the settings is arbitrary depending on the application, and may be set to, for example, one. Further, the alignment mark 15 formed by the three tracks is not limited to one place, and may be provided at a plurality of places at equal intervals.
此處，於本發明中，如圖1所示，第2對位標記15係形成於包含有第1對位標記14之直線上。此第2對位標記15亦可相對於第1對位標記14，以遮罩圖案11之寬度方向配列間距P1之1倍或2倍等的整數倍尺寸偏移形成於寬度方向。 Here, in the present invention, as shown in FIG. 1, the second alignment mark 15 is formed on a straight line including the first alignment mark 14. The second alignment mark 15 may be formed in the width direction with respect to the first alignment mark 14 by an integral multiple of the first or second alignment mark 14 in the width direction of the mask pattern 11 such as one or two times the pitch P 1 .
接著，就此般結構之光罩1的使用狀態，參照圖3~圖9來加以說明。 Next, the state of use of the mask 1 having such a configuration will be described with reference to FIGS. 3 to 9.
首先，如圖3所示，被曝光基板2係一邊被搬送於搬送方向A一邊於第1台32a處藉由第1曝光裝置3a而配向於搬送方向A。此第1曝光裝置3a係構成為包含有：拍攝被曝光圖案21及第1對位標記14之第1攝影機構31a、照射曝光光線L之曝光光源(圖示省略)、搬送被搬送基板2之搬送機構(圖示省略)、第1發明之光罩1、以及將此光罩1之位置加以對位之對位機構(圖示省略)。第1曝光裝置3a中，光罩1係以第1觀測窗12會從搬送方向A上游側搬來之方式加以設置，會讓從光罩1上方所設置之曝光光源所照射之曝光光線L通過遮罩圖案11的一部分，而選擇性地照射配向於通過光罩1下方之被曝光基板2之被曝光圖案21。 First, as shown in FIG. 3, the substrate 2 to be exposed is transported in the transport direction A while being transported in the transport direction A by the first exposure device 3a at the first stage 32a. The first exposure device 3a includes a first imaging unit 31a that images the exposure pattern 21 and the first alignment mark 14, an exposure light source (not shown) that emits the exposure light L, and a conveyed substrate 2 that is conveyed. The transport mechanism (not shown), the photomask 1 of the first invention, and the alignment mechanism (not shown) for aligning the position of the mask 1 are omitted. In the first exposure apparatus 3a, the photomask 1 is provided such that the first observation window 12 is moved from the upstream side in the transport direction A, and the exposure light L irradiated from the exposure light source provided above the mask 1 is passed. A portion of the mask pattern 11 is selectively irradiated to the exposed pattern 21 that is directed through the exposed substrate 2 under the mask 1.
如圖4所示，將被曝光基板2配向於搬送方向A之際，首先，藉由搬送機構所搬送之被曝光基板2會在被曝光 基板2表面所形成之被曝光圖案21與光罩1之第1觀測窗12為上下重疊之位置處，藉由第1攝影機構31a來從上方拍攝該重疊部分。基於藉由第1攝影機構31a所拍攝之影像資訊，會檢測出第1對位標記14與被曝光圖案21之寬度方向的中央部在寬度方向之位移，而對位機構會以消除此位移之方式，將光罩1移動於寬度方向，來將光罩1相對於被曝光基板2進行對位。 As shown in FIG. 4, when the substrate 2 to be exposed is aligned in the transport direction A, first, the substrate 2 to be exposed which is transported by the transport mechanism is exposed. The exposed pattern 21 formed on the surface of the substrate 2 and the first observation window 12 of the mask 1 are vertically overlapped, and the overlapping portion is imaged from above by the first imaging unit 31a. Based on the image information captured by the first imaging unit 31a, the displacement of the central portion of the first alignment mark 14 and the exposure pattern 21 in the width direction is detected in the width direction, and the alignment mechanism eliminates the displacement. In this manner, the reticle 1 is moved in the width direction to align the reticle 1 with respect to the substrate 2 to be exposed.
於光罩1被對位後狀態下將被曝光基板2進一步進行搬送時，如圖5所示，被曝光圖案21在通過遮罩圖案11下方之際，會從曝光光源照射曝光光線L，而對搬送方向A將一邊側一半(圖5中左側)加以曝光。光罩1之對位由於係在被曝光圖案21與第1觀測窗12在上下重疊位置時依序進行，故光罩1係經常性地成為被對位於被曝光基板2之狀態。因此，能在被曝光圖案21的正確位置進行曝光。反覆上述操作直到被曝光基板2通過光罩1下方而結束為止，如圖6所示，被曝光基板2之被曝光圖案21會分別相對於搬送方向A而有一邊側一半(圖6中左側)被曝光，成為被配向於搬送方向A之狀態。 When the exposed substrate 2 is further conveyed while the mask 1 is being aligned, as shown in FIG. 5, when the exposed pattern 21 passes under the mask pattern 11, the exposure light L is irradiated from the exposure light source. In the transport direction A, one side half (left side in Fig. 5) is exposed. Since the alignment of the mask 1 is sequentially performed when the exposed pattern 21 and the first observation window 12 are vertically overlapped, the mask 1 is often placed in a state of being placed on the substrate 2 to be exposed. Therefore, exposure can be performed at the correct position of the exposed pattern 21. After the above operation is repeated until the substrate 2 to be exposed passes through the lower surface of the mask 1, as shown in FIG. 6, the exposure pattern 21 of the substrate 2 to be exposed has one side half (left side in FIG. 6) with respect to the transport direction A. It is exposed and is in a state of being aligned to the transport direction A.
接著，如圖3所示，於第1台32a上結束曝光後之被曝光基板2會一邊被搬送於搬送方向A一邊於第2台32b上藉由第2曝光裝置3b而被配向於搬送方向A的相反方向。此第2曝光裝置3b係與該第1曝光裝置3a為約略相同結構。第2曝光裝置3b中，光罩1如圖7 所示，係第2觀測窗13會來到搬送方向A上游側般地，亦即第1曝光裝置3a中係將光罩1反轉到水平狀態而加以設置。 Then, as shown in FIG. 3, the exposed substrate 2 after being exposed in the first stage 32a is transported in the transport direction A while being aligned in the transport direction by the second exposure apparatus 3b on the second stage 32b. The opposite direction of A. The second exposure device 3b has approximately the same configuration as the first exposure device 3a. In the second exposure device 3b, the photomask 1 is as shown in FIG. As shown in the figure, the second observation window 13 is placed on the upstream side of the transport direction A, that is, the first exposure device 3a is provided with the photomask 1 inverted to the horizontal state.
如圖7所示，將被曝光基板2配向於搬送方向A之相反方向之際，首先藉由搬送機構所搬送後之被曝光基板2會在被曝光基板2表面所形成之被曝光圖案21與光罩1之第2觀測窗13在上下重疊之位置處，藉由第2攝影機構31b從上方拍攝該重疊部分。基於第2攝影機構31b所拍攝之影像資訊，來檢測第2對位標記15與被曝光圖案21之寬度方向中央部的位移，而對位機構會以消除此位移之方式，將光罩1移動於寬度方向，來將光罩1相對於被曝光基板2進行對位。 As shown in FIG. 7, when the substrate 2 to be exposed is oriented in the opposite direction to the transport direction A, the exposed substrate 21 formed on the surface of the substrate 2 to be exposed by the substrate 2 to be exposed after being transported by the transport mechanism is first The second observation window 13 of the mask 1 is vertically overlapped, and the overlapping portion is imaged from above by the second imaging unit 31b. Based on the image information captured by the second imaging unit 31b, the displacement of the second registration mark 15 and the central portion of the exposure pattern 21 in the width direction is detected, and the alignment mechanism moves the mask 1 so as to eliminate the displacement. The mask 1 is aligned with respect to the substrate 2 to be exposed in the width direction.
光罩1在被對位後之狀態下將被曝光基板2進一步加以搬送時，如圖8所示，被曝光圖案21在通過遮罩圖案11下方之際，便從曝光光源照射曝光光線L，而相對於搬送方向A將另邊側一半(圖8中右側)加以曝光。光罩1之對位由於係在被曝光圖案21與第2觀測窗13在上下重疊位置時依序進行，故光罩1係經常性地成為被對位於曝光基板之狀態。因此，能在被曝光圖案21的正確位置進行曝光。反覆上述操作直到被曝光基板2通過光罩1下方而結束為止，如圖9所示，被曝光基板2之被曝光圖案21會分別相對於搬送方向A而有另邊側一半(圖9中右側)被曝光，成為被配向於搬送方向A之相反方向的狀態。 When the photomask 1 is further transported by the exposure substrate 2 in the state of being aligned, as shown in FIG. 8, when the exposure pattern 21 passes under the mask pattern 11, the exposure light L is irradiated from the exposure light source. The other side half (the right side in Fig. 8) is exposed with respect to the transport direction A. Since the alignment of the mask 1 is sequentially performed when the exposed pattern 21 and the second observation window 13 are vertically overlapped, the mask 1 is often placed in a state of being exposed to the substrate. Therefore, exposure can be performed at the correct position of the exposed pattern 21. After the above operation is repeated until the substrate 2 to be exposed passes through the lower side of the mask 1, as shown in FIG. 9, the exposed patterns 21 of the exposed substrate 2 are half of the other side with respect to the transport direction A (the right side in FIG. 9). It is exposed and is in a state of being aligned in the opposite direction to the transport direction A.
如上述般，藉由將第1發明之光罩1的方向加以反轉來使用，便可以將被曝光基板2表面所形成之被曝光圖案21配向於兩方向。因此，用以於兩方向曝光之光罩1便可共通化於相同的光罩1。又，由於可將光罩1共通化，故便能降低光罩1的製造成本。再者，遮罩圖案11之寬度方向配列間距P1與被曝光圖案21之寬度方向被列間距P2為相同尺寸，由於寬度方向的遮罩圖案11的寬度W為遮罩圖案11之寬度方向配列間距P1的1/2倍，故可不產生重複或間隙般地將被曝光圖案21整體加以配向。因此，不會產生雙重配向的部分或未被配向的部分，而可抑制配向紋。又再者，第1對位標記14及第2對位標記15係設置於包含有平行於遮罩圖案11之搬送方向A的緣部(短邊)之直線上，在將被曝光基板2曝光之際，由於會被對位於被曝光圖案21之寬度方向中央部，故可將被曝光圖案21於寬度方向各一半(1/2尺寸)地來配向。因此，被曝光基板2整體於被曝光圖案21之兩方向的配向會變得均勻而可抑制配向紋。 As described above, by using the direction of the mask 1 of the first invention in reverse, the exposed pattern 21 formed on the surface of the substrate 2 to be exposed can be aligned in both directions. Therefore, the mask 1 for exposure in both directions can be common to the same mask 1. Moreover, since the photomask 1 can be shared, the manufacturing cost of the photomask 1 can be reduced. Further, the mask pattern 11 in the width direction of the arranging pitch P 1 is the width direction of the row pitch of the pattern 21 is exposed P 2 are the same size, since the width W of the mask pattern 11 in the width direction of the pattern 11 as a mask in the width direction of Since the arrangement pitch P 1 is 1/2 times, the entire exposed pattern 21 can be aligned without causing repetition or gap. Therefore, the double-aligned portion or the unaligned portion is not generated, and the alignment pattern can be suppressed. Further, the first alignment mark 14 and the second alignment mark 15 are provided on a line including the edge portion (short side) parallel to the conveyance direction A of the mask pattern 11, and are exposed to the substrate 2 to be exposed. In this case, since the center portion of the exposed pattern 21 in the width direction is opposed to each other, the exposed pattern 21 can be aligned in half (1/2 size) in the width direction. Therefore, the alignment of the entire exposed substrate 2 in both directions of the exposed pattern 21 becomes uniform, and the alignment pattern can be suppressed.
另外，於搬送方向A之配向及於搬送方向之相反方向之配向亦可分別交到複數台來進行。 In addition, the alignment in the transport direction A and the alignment in the opposite direction to the transport direction may be performed on a plurality of stations.
圖10係顯示第2發明之光罩1實施形態的概略圖。此光罩1係使用於與第1發明之光罩1為相同之目的者，係包含有遮罩圖案11、第1觀測窗12、第2觀測窗13、第1對位標記14、第2對位標記15所構成，基本上與第1發明之光罩1為相同結構。第2發明之光罩1與第1發明之光罩1的差異 點在於，第2觀測窗13係相對於第1觀測窗12而形成在鄰接於搬送方向A下游側、以及第2對位標記15係相對於第1對位標記14而偏移遮罩圖案11之寬度方向配列間距P1的1/2倍的尺寸來形成於寬度方向。 Fig. 10 is a schematic view showing an embodiment of the reticle 1 of the second invention. The reticle 1 is used for the same purpose as the reticle 1 of the first invention, and includes a mask pattern 11, a first observation window 12, a second observation window 13, a first alignment mark 14, and a second The alignment mark 15 is basically the same as the photomask 1 of the first invention. The mask 1 of the second aspect of the invention differs from the mask 1 of the first aspect in that the second observation window 13 is formed on the downstream side of the conveyance direction A and the second alignment mark with respect to the first observation window 12 . line 15 relative to the first alignment mark 14 is offset mask pattern 11 in the width direction of the arranging pitch P 1/2 times a dimension in the width direction is formed.
如圖10所示，於該光罩1之上游側端部(圖10中下側端部)，藉由攝影機構來用以拍攝通過其下方之被曝光基板2的第1觀測窗12係設置為同樣於圖1所示者。 As shown in FIG. 10, at the upstream end portion (the lower end portion in FIG. 10) of the reticle 1, a first observation window 12 for photographing the substrate 2 to be exposed passing therethrough is provided by an imaging mechanism. For the same as shown in Figure 1.
然後，如圖10所示，此第2觀測窗13係相對於該第1觀測窗而鄰接形成於搬送方向A下游側，並形成為與第1觀測窗12為相同形狀。此第2觀測窗13所形成之第2對位標記15之結構與第1發明之光罩1的第2對位標記15之結構除以下記載之結構外均為相同。 Then, as shown in FIG. 10, the second observation window 13 is formed adjacent to the first observation window in the downstream direction of the conveyance direction A, and is formed in the same shape as the first observation window 12. The configuration of the second alignment mark 15 formed by the second observation window 13 and the configuration of the second alignment mark 15 of the photomask 1 of the first invention are the same except for the structures described below.
另外，使用此第2觀測窗13將被曝光基板2曝光之際，不用將光罩1前後(搬送方向A上游側及下游側)加以反轉。 Further, when the exposed substrate 2 is exposed by the second observation window 13, it is not necessary to reverse the front and rear of the mask 1 (the upstream side and the downstream side in the transport direction A).
此處，本發明中，如圖11所示，第2對位標記15係相對於第1對位標記14而位移了遮罩圖案11之寬度方向配列間距P1之1/2倍的尺寸，亦即遮罩圖案11之寬度W來形成於寬度方向。此第2對位標記15亦可相對於第1對位標記14而位移了遮罩圖案11之寬度方向配列間距P1之1/2倍的尺寸之奇數倍，例如3/2倍或5/2倍之尺寸來形成於寬度方向。接著，就此般結構之光罩1的使用狀態，參照圖6、9、12~15來加以說明。 Here, in the present invention, as shown in FIG. 11, the second alignment mark 15 relative to the first line alignment mark 14 is displaced widthwise size mask pattern 11 of the arranging pitch P 1 1/2 times, That is, the width W of the mask pattern 11 is formed in the width direction. The second alignment mark 15 may be shifted by an odd multiple of a size 1/2 times the pitch P 1 of the width direction of the mask pattern 11 with respect to the first alignment mark 14 , for example, 3/2 times or 5 /2 times the size is formed in the width direction. Next, the state of use of the mask 1 having such a configuration will be described with reference to Figs. 6, 9, and 12 to 15.
首先，如圖3所示，被曝光基板2會一般被搬送於搬送方向A一邊於第1台32a上，藉由第1曝光裝置3a被配向於般 送方向A。此第1曝光裝置3a係與第1發明中所說明之曝光裝置為相同結構。 First, as shown in FIG. 3, the substrate 2 to be exposed is generally transported in the transport direction A on the first stage 32a, and is aligned by the first exposure apparatus 3a. Send direction A. This first exposure apparatus 3a has the same configuration as the exposure apparatus described in the first invention.
如圖12所示，將被曝光基板2配向於搬送方向A之際，首先，藉由搬送機構所搬送之被曝光基板2會在被曝光基板2表面所形成之被曝光圖案21與光罩1之第1觀測窗12為上下重疊之位置處，藉由第1攝影機構31a來從上方拍攝該重疊部分。基於藉由第1攝影機構31a所拍攝之影像資訊，會檢測出第1對位標記14與被曝光圖案21之寬度方向的中央部在寬度方向之位移，而對位機構會以消除此位移之方式，將光罩1移動於寬度方向，來將光罩1相對於被曝光基板2進行對位。 As shown in FIG. 12, when the substrate 2 to be exposed is aligned in the transport direction A, first, the exposed pattern 2 and the mask 1 formed on the surface of the substrate 2 to be exposed by the substrate 2 to be exposed by the transport mechanism are arranged. The first observation window 12 is a position where the upper and lower observation windows 12 are vertically overlapped, and the overlapping portion is imaged from above by the first imaging unit 31a. Based on the image information captured by the first imaging unit 31a, the displacement of the central portion of the first alignment mark 14 and the exposure pattern 21 in the width direction is detected in the width direction, and the alignment mechanism eliminates the displacement. In this manner, the reticle 1 is moved in the width direction to align the reticle 1 with respect to the substrate 2 to be exposed.
於光罩1被對位後狀態下將被曝光基板2進一步進行搬送時，如圖13所示，被曝光圖案21在通過遮罩圖案11下方之際，會從曝光光源照射曝光光線L，而對搬送方向A將一邊側一半(圖13中左側)加以曝光。光罩1之對位由於係在被曝光圖案21與第1觀測窗12在上下重疊位置時依序進行，故光罩1係經常性地成為被對位於被曝光基板2之狀態。因此，能在被曝光圖案21的正確位置進行曝光。反覆上述操作直到被曝光基板2通過光罩1下方而結束為止，如圖6所示，被曝光基板2之被曝光圖案21會分別相對於搬送方向A而有一邊側一半(圖6中左側)被曝光，成為被配向於搬送方向A之狀態。 When the exposed substrate 2 is further transported while the mask 1 is being aligned, as shown in FIG. 13, when the exposed pattern 21 passes under the mask pattern 11, the exposure light L is irradiated from the exposure light source. The side half (the left side in Fig. 13) is exposed to the conveyance direction A. Since the alignment of the mask 1 is sequentially performed when the exposed pattern 21 and the first observation window 12 are vertically overlapped, the mask 1 is often placed in a state of being placed on the substrate 2 to be exposed. Therefore, exposure can be performed at the correct position of the exposed pattern 21. After the above operation is repeated until the substrate 2 to be exposed passes through the lower surface of the mask 1, as shown in FIG. 6, the exposure pattern 21 of the substrate 2 to be exposed has one side half (left side in FIG. 6) with respect to the transport direction A. It is exposed and is in a state of being aligned to the transport direction A.
接著，如圖3所示，於第1台32a上結束曝光後之被 曝光基板2會一邊被搬送於搬送方向A一邊於第2台32b上藉由第2曝光裝置3b而被配向於搬送方向A的相反方向。此第2曝光裝置3b係與該第1曝光裝置3a為約略相同結構。第2曝光裝置3b中，光罩1如圖14所示，係第2觀測窗13會來到搬送方向A上游側般地，亦即第1曝光裝置3a中係與光罩1之相同方向下，位移遮罩圖案11之寬度方向配列間距P1之1/2倍尺寸來設置於寬度方向。 Then, as shown in FIG. 3, the exposed substrate 2 after being exposed in the first stage 32a is transported in the transport direction A while being aligned in the transport direction by the second exposure apparatus 3b on the second stage 32b. The opposite direction of A. The second exposure device 3b has approximately the same configuration as the first exposure device 3a. In the second exposure device 3b, as shown in FIG. 14, the photomask 1 is in the same direction as the mask 1 in the first exposure device 3a as the second observation window 13 comes to the upstream side in the transport direction A. The width of the displacement mask pattern 11 in the width direction is set to be 1/2 times the pitch P 1 and is set in the width direction.
如圖14所示，將被曝光基板2配向於搬送方向A之相反方向之際，首先藉由搬送機構所搬送後之被曝光基板2會在被曝光基板2表面所形成之被曝光圖案21與光罩1之第2觀測窗13在上下重疊之位置處，藉由第2攝影機構31b從上方拍攝該重疊部分。基於第2攝影機構31b所拍攝之影像資訊，來檢測第2對位標記15與被曝光圖案21之寬度方向中央部的位移，而對位機構會以消除此位移之方式，將光罩1移動於寬度方向，來將光罩1相對於被曝光基板2進行對位。 As shown in FIG. 14, when the substrate 2 to be exposed is aligned in the opposite direction to the transport direction A, the exposed substrate 21 formed on the surface of the substrate 2 to be exposed by the substrate 2 to be exposed after being transported by the transport mechanism is first The second observation window 13 of the mask 1 is vertically overlapped, and the overlapping portion is imaged from above by the second imaging unit 31b. Based on the image information captured by the second imaging unit 31b, the displacement of the second registration mark 15 and the central portion of the exposure pattern 21 in the width direction is detected, and the alignment mechanism moves the mask 1 so as to eliminate the displacement. The mask 1 is aligned with respect to the substrate 2 to be exposed in the width direction.
光罩1在被對位後之狀態下將被曝光基板2進一步加以搬送時，如圖15所示，被曝光圖案21在通過遮罩圖案11下方之際，便從曝光光源照射曝光光線L，而相對於搬送方向A將另邊側一半(圖15中右側)加以曝光。光罩1之對位由於係在被曝光圖案21與第2觀測窗13在上下重疊位置時依序進行，故光罩1係經常性地成為被對位於被曝光基板2之狀態。因此，能在被曝 光圖案21的正確位置進行曝光。反覆上述操作直到被曝光基板2通過光罩1下方而結束為止，如圖9所示，被曝光基板2之被曝光圖案21會分別相對於搬送方向A而有另邊側一半(圖9中右側)被曝光，成為被配向於搬送方向A之相反方向的狀態。 When the photomask 1 is further conveyed by the exposure substrate 2 in the state of being aligned, as shown in FIG. 15, when the exposure pattern 21 passes under the mask pattern 11, the exposure light L is irradiated from the exposure light source. On the other hand, the other side half (the right side in Fig. 15) is exposed with respect to the conveyance direction A. Since the alignment of the mask 1 is sequentially performed when the exposed pattern 21 and the second observation window 13 are vertically overlapped, the mask 1 is often placed in a state of being placed on the substrate 2 to be exposed. Therefore, it can be exposed The correct position of the light pattern 21 is exposed. After the above operation is repeated until the substrate 2 to be exposed passes through the lower side of the mask 1, as shown in FIG. 9, the exposed patterns 21 of the exposed substrate 2 are half of the other side with respect to the transport direction A (the right side in FIG. 9). It is exposed and is in a state of being aligned in the opposite direction to the transport direction A.
如上述般，藉由將第2發明之光罩1於寬度方向位移遮罩圖案11之寬度方向配列間距P1之1/2尺寸寬度方向來使用，便可以將被曝光基板2表面所形成之被曝光圖案21配向於兩方向。因此，用以於兩方向曝光之光罩1便可共通化於相同的光罩1。又，由於可將光罩1共通化，故便能降低光罩1的製造成本。再者，遮罩圖案11之寬度方向配列間距P1與被曝光圖案21之寬度方向被列間距P2為相同尺寸，由於寬度方向的遮罩圖案11的寬度W為遮罩圖案11之寬度方向配列間距P1的1/2倍，故可不產生重複或間隙般地將被曝光圖案21整體加以配向。因此，不會產生雙重配向的部分或未被配向的部分，而可抑制配向紋。又再者，第1對位標記14及第2對位標記15係設置於包含有平行於遮罩圖案11之搬送方向A的緣部之直線上，在將被曝光基板2曝光之際，由於會被對位於被曝光圖案21之寬度方向中央部，故可將被曝光圖案21於寬度方向各一半(1/2尺寸)地來配向。因此，被曝光基板2整體於被曝光圖案21之兩方向的配向會變得均勻而可抑制配向紋。 As described above, by using the mask 1 of the second invention in the width direction of the mask pattern 11 in the width direction, the width direction of the pitch P1 is set to 1/2, and the surface of the substrate 2 to be exposed can be formed. The exposure pattern 21 is aligned in both directions. Therefore, the mask 1 for exposure in both directions can be common to the same mask 1. Moreover, since the photomask 1 can be shared, the manufacturing cost of the photomask 1 can be reduced. Further, the mask pattern 11 in the width direction of the arranging pitch P 1 is the width direction of the row pitch of the pattern 21 is exposed P 2 are the same size, since the width W of the mask pattern 11 in the width direction of the pattern 11 as a mask in the width direction of Since the arrangement pitch P 1 is 1/2 times, the entire exposed pattern 21 can be aligned without causing repetition or gap. Therefore, the double-aligned portion or the unaligned portion is not generated, and the alignment pattern can be suppressed. Further, the first alignment mark 14 and the second alignment mark 15 are provided on a line including the edge portion parallel to the conveyance direction A of the mask pattern 11, and when the substrate 2 to be exposed is exposed, Since the alignment pattern 21 is positioned in the center portion in the width direction of the exposure pattern 21, the exposure pattern 21 can be aligned in half (1/2 size) in the width direction. Therefore, the alignment of the entire exposed substrate 2 in both directions of the exposed pattern 21 becomes uniform, and the alignment pattern can be suppressed.
另外，於搬送方向A之配向及於搬送方向之相反方向 之配向亦可分別交到複數台來進行。 In addition, the alignment direction in the transport direction A and the opposite direction to the transport direction The alignment can also be carried out to multiple stations.
A‧‧‧搬送方向 A‧‧‧Transfer direction
1‧‧‧光罩 1‧‧‧Photomask
11‧‧‧遮罩圖案 11‧‧‧ mask pattern
12‧‧‧第1觀測窗 12‧‧‧1st observation window
13‧‧‧第2觀測窗 13‧‧‧2nd observation window
14‧‧‧第1對位標記 14‧‧‧1st registration mark
15‧‧‧第2對位標記 15‧‧‧2nd alignment mark
圖1係顯示第1發明之光罩實施形態的概略圖。 Fig. 1 is a schematic view showing an embodiment of a photomask according to a first aspect of the invention.
圖2係將該光罩部分放大來顯示之部分放大圖，(a)係顯示第1對位標記之周邊部分、(b)係顯示第2對位標記之周邊部分的部分放大圖。 Fig. 2 is a partially enlarged view showing a portion of the reticle in an enlarged manner, (a) showing a peripheral portion of the first alignment mark, and (b) showing a partial enlarged view showing a peripheral portion of the second alignment mark.
圖3係藉由第1發明及第2發明之光罩來將被曝光基板配向於兩方向之曝光裝置的概略圖。 Fig. 3 is a schematic view showing an exposure apparatus in which the substrate to be exposed is aligned in both directions by the photomasks of the first invention and the second invention.
圖4係顯示相對於該光罩而被曝光基板已被對位後狀態之部分放大圖。 Fig. 4 is a partially enlarged view showing a state in which the exposed substrate has been aligned with respect to the reticle.
圖5係顯示藉由該光罩來將被曝光基板曝光之狀態的部分放大圖。 Fig. 5 is a partially enlarged view showing a state in which the exposed substrate is exposed by the mask.
圖6係顯示藉由該曝光來朝一方向配向之被曝光基板之部分放大圖。 Fig. 6 is a partially enlarged view showing the substrate to be exposed which is aligned in one direction by the exposure.
圖7係顯示將圖4所示之光罩反轉來將被曝光基板對位後狀態之部分放大圖。 Fig. 7 is a partially enlarged view showing a state in which the mask shown in Fig. 4 is reversed to align the substrate to be exposed.
圖8係顯示藉由該光罩來將被曝光基板曝光之狀態的部分放大圖。 Fig. 8 is a partially enlarged view showing a state in which the exposed substrate is exposed by the photomask.
圖9係顯示已配向於兩方向之被曝光基板之部分放大圖。 Fig. 9 is a partially enlarged view showing the substrate to be exposed which has been aligned in both directions.
圖10係顯示第2發明之光罩實施形態的概略圖。 Fig. 10 is a schematic view showing an embodiment of a photomask according to a second aspect of the invention.
圖11係放大顯示該光罩之一部分的部分放大圖。 Figure 11 is a partially enlarged view showing a part of the reticle in an enlarged manner.
圖12係顯示相對於該光罩而被曝光基板已被對位後狀態之部分放大圖。 Fig. 12 is a partially enlarged view showing a state in which the exposed substrate has been aligned with respect to the reticle.
圖13顯示藉由該光罩來將被曝光基板曝光之狀態的部分放 大圖。 Figure 13 shows a portion of the state in which the exposed substrate is exposed by the mask Big picture.
圖14係顯示相對於在被曝光基板之搬送方向的交叉方向位移了光罩圖案之配列間距之1/2尺寸來設置之光罩而被曝光基板已被對位後狀態之部分放大圖。 Fig. 14 is a partially enlarged view showing a state in which the exposed substrate is aligned with respect to the reticle having the 1/2 size of the arrangement pitch of the reticle pattern displaced in the intersecting direction of the substrate to be exposed.
圖15係顯示藉由該光罩來將被曝光基板曝光之狀態的部分放大圖。 Fig. 15 is a partially enlarged view showing a state in which the exposed substrate is exposed by the photomask.
A‧‧‧搬送方向 A‧‧‧Transfer direction
1‧‧‧光罩 1‧‧‧Photomask
11‧‧‧遮罩圖案 11‧‧‧ mask pattern
12‧‧‧第1觀測窗 12‧‧‧1st observation window
13‧‧‧第2觀測窗 13‧‧‧2nd observation window
14‧‧‧第1對位標記 14‧‧‧1st registration mark
15‧‧‧第2對位標記 15‧‧‧2nd alignment mark
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Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011170276A JP5843191B2 (en) | 2011-08-03 | 2011-08-03 | Photo mask |
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| TW201317706A TW201317706A (en) | 2013-05-01 |
| TWI528104B true TWI528104B (en) | 2016-04-01 |
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| TW101127908A TWI528104B (en) | 2011-08-03 | 2012-08-03 | Photomask |
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| JP2006324541A (en) * | 2005-05-20 | 2006-11-30 | Renesas Technology Corp | Method for manufacturing wiring board, and semiconductor device |
| JP4754924B2 (en) * | 2005-10-07 | 2011-08-24 | 株式会社ブイ・テクノロジー | Exposure equipment |
| JP5145530B2 (en) * | 2005-10-07 | 2013-02-20 | 株式会社ブイ・テクノロジー | Photomask and exposure method using the same |
| WO2007113933A1 (en) * | 2006-04-05 | 2007-10-11 | Sharp Kabushiki Kaisha | Exposure method and exposure device |
| JP4971835B2 (en) * | 2007-03-02 | 2012-07-11 | 株式会社ブイ・テクノロジー | Exposure method and exposure apparatus |
| JP2010092021A (en) * | 2008-09-11 | 2010-04-22 | Nsk Ltd | Exposure apparatus and exposure method |
| DE102009051173A1 (en) * | 2009-10-29 | 2011-05-05 | HÜGLER, Klaus | Module for modular clean room systems |
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| TW201317706A (en) | 2013-05-01 |
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