TWI520401B - 包含冷光陶瓷與光擴散材料之發光裝置 - Google Patents
包含冷光陶瓷與光擴散材料之發光裝置 Download PDFInfo
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- TWI520401B TWI520401B TW096143729A TW96143729A TWI520401B TW I520401 B TWI520401 B TW I520401B TW 096143729 A TW096143729 A TW 096143729A TW 96143729 A TW96143729 A TW 96143729A TW I520401 B TWI520401 B TW I520401B
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- 239000000919 ceramic Substances 0.000 title claims description 67
- 239000000463 material Substances 0.000 title claims description 36
- 238000000149 argon plasma sintering Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 44
- 239000012780 transparent material Substances 0.000 claims description 43
- 239000013618 particulate matter Substances 0.000 claims description 31
- 239000011521 glass Substances 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- -1 polyoxymethylene Polymers 0.000 claims description 8
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- 229930040373 Paraformaldehyde Natural products 0.000 claims description 3
- 229920006324 polyoxymethylene Polymers 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 44
- 239000000843 powder Substances 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 8
- 239000011575 calcium Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000005387 chalcogenide glass Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910004122 SrSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- RCAQADNJXBGEKC-UHFFFAOYSA-N [O].[In].[Sb] Chemical compound [O].[In].[Sb] RCAQADNJXBGEKC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical class [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3865—Aluminium nitrides
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Structural Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Description
本發明係關於波長轉換半導體發光裝置。
半導體發光裝置包含發光二極體(LEDs),共振腔發光二極體(RCLEDs),垂直腔表面發射雷射器(VCSELs)和邊緣發射雷射器,其位於目前可得到的最有效的光源之列。目前感興趣的是製造高亮度的發光裝置,其能橫跨可見光譜運作,其材料系統包含IIIV族半導體,特別是二元、三元、四元的如鎵,鋁,銦和氮的合金元素,也可以是III族氮化物材料。典型地,III族氮化物發光裝置係由以下方法製成:藉由金屬有機化學氣相沉積(MOCVD)、分子束磊晶形成(MBE)或用其他磊晶技術在藍寶石、碳化矽、III族氮化物上磊晶長成不同成分及摻雜物濃度之半導體層堆疊。堆疊經常包含一個或更多的n類型的層,比如摻雜了在基材上的矽,一個或更多的形成在n類型層或所有層上主動區域的發光層,和一個或更多的p類型的層,比如摻雜了在主動區域上的鎂。電氣連接部係形成在n和p類型區域上。
因為III族氮化物發光裝置一般在可見光譜較短波長的末尾,因此靠III族氮化物裝置產生的光能被很容易地轉換製造成有更長波長的光。在該領域中眾所周知,用熟知的冷光或螢光處理,有第一峰值波長的光(主要光)能被轉換成有更長峰值波長的光(第二光)。該螢光處理涉及通過波長
轉換材料吸收主光,如螢光體,和激發螢光材料的發光中心,其散發第二光。該第二光的峰值波長將依賴於螢光材料。該類型的螢光材料能被選擇來生產具有特殊峰值波長的第二光。
螢光體可以用很多方法通過一個LED被配置在發光的路徑中。美國專利第6,351,069號中描述了一個覆蓋了一層透明樹脂的III族氮化物LED晶粒,波長轉換材料被混合在樹脂中。美國專利第6,630,691號中描述了在單晶發光襯底上的增長型LED裝置。美國專利第6,696,703號中描述了使用薄膜螢光體層配置在LEDs上。一些專利描述了形成保形螢光體層在LEDs上,比如美國專利第6,576,488號中描述的電泳沉積法,或者美國專利第6,650,044號中描述的塗裝法。這些螢光體層中的很多都是脆弱的和難以處理的,以及經不起高溫和LED產生的高通量環境。另外,通過某些處理或許很難或不可能形成多螢光層。
代替上述螢光層的是使用波長轉換材料形成瓷體,更詳細的描述在美國專利申請公開案第2005-0269582號中,其被納入在這裏作為參考。該描述的冷光瓷體其中一般是自承(self-supporting)層,各自形成半導體裝置,然後被附上已完成的半導體裝置或作為該半導體裝置的成長基材。冷光陶瓷趨向於比上述的螢光層更堅固。
按照本發明的實施例,陶瓷體包括波長轉換材料,其被配置在半導體結構發光區域的發光路徑中,半導體結構包
括配置在n類型和p類型區域之間的發光區域。一層透明材料也被配置在發光區域的發光路徑中。該透明材料可以連接陶瓷體和半導體結構。配置來散射發光區域發出的光的微粒物被配置在黏合劑材料層中。在一些實施例中該微粒物是螢光體;在一些實施例中該微粒物不是波長轉換材料。散射微粒物在黏合劑中的存在可以提高來自裝置的混合光表面的均勻性,可以提高混合光的色彩特徵。
冷光陶瓷層可以通過在加壓下加熱普通的粉末螢光體直到螢光體微粒物的表面開始變軟和熔化的方法製造。部分熔化的微粒物粒在一起形成剛性微粒附聚物。不像薄膜,它在光學上相當於一單個的大的沒有光斷續的螢光體微粒物,冷光陶瓷相當於緊緊封裝的個體螢光體微粒物體,使得在不同的螢光體微粒物之間的介面有小的光斷續。既然粉末螢光體開始的材料一般是均勻的成分和摻雜,結果的冷光陶瓷一般是透明的,光學上是同質的和啟動摻雜物均勻摻雜貫穿陶瓷體,其作為發光中心。
均勻摻雜冷光陶瓷的一個問題是冷光陶瓷的最小厚度限制於可再生製造陶瓷的能力。很多螢光體有一個較佳的摻雜範圍能使螢光體充分地吸收和散發光。在螢光體佈置中,比如保形層,較佳摻雜級別的螢光體粉末被沉積到不管什麼厚度均必須要達到要求的發光中心數目,其生產出要求的螢光體轉換數量和來自發光二極體未轉換的漏出數量,結果得到理想特徵的混合光。在冷光陶瓷中,要求生
產的厚度可能會強迫用一個比較佳級別更低的摻雜級別,如果在陶瓷中使用較佳摻雜級別摻雜螢光體粉末以最小厚度要求生產導致太多的發光中心,那麼因此就會有很多的螢光體轉換。
上面描述的太多發光中心的問題在結合一個藍色發光二極體的紅色冷光陶瓷和用黃色冷光陶瓷來製造白色混合光中尤其嚴重。只需要一小部分發紅光的螢光體就能製造白色混合光;如果太多的發紅光的螢光體被使用,那麼該混合光將顯得太紅。在發紅光的螢光體中用較佳的發光中心摻雜級別,必須產生要求的發紅光的發光中心的數目在冷光陶瓷層要達到20 μm厚度。然而,冷光陶瓷的最小生產厚度形成螢光體是100 μm。為了達到在冷光陶瓷中100 μm厚度期望的發光中心數目,更低較非所欲的摻雜級別的螢光體粉末必須被使用形成該冷光陶瓷。
第二個問題用透明冷光陶瓷在圖1中有描述。一透明冷光陶瓷30被連接到一個發光裝置12。繪出從發光區域31散發來的兩條光射線33和34。因為光射線33比射線34以相對於正常發光層表面更小的角度被散發,所以射線33看見冷光陶瓷30中更少的螢光體,以及更像要逃離冷光陶瓷30而沒有被螢光轉換。相反地,射線34看見冷光陶瓷30中更多的螢光體,以及更像要在逃離冷光陶瓷30前被螢光轉換。結果,假設發光區域31散發藍光和冷光陶瓷30中的螢光體散發黃光,那麼靠近該裝置中心的頂面散發的光顯得更藍,而靠近該裝置邊緣的頂面散發的光顯得更黃,導致
出現一個不需要的淡黃色光圈圍繞在更多淡藍色光的中心。
圖1中描述的黃色光圈問題可以通過增加冷光陶瓷30的散射而減少或消滅;那就是,使冷光陶瓷30半透明而不是全透明,經常通過在生產陶瓷期間***氣囊,其中氣囊作為散射中心。用這方法的一個問題是很難控制氣囊的***。***太多的氣囊可能導致太多的散射,其能減少冷光陶瓷30的抽取效率。
在本發明的一些實施例中,一種能產生散射的材料,如螢光體,被配置在半導體發光裝置和冷光陶瓷之間,如該裝置在圖2中展示的橫截面視圖。在圖2的裝置中,III族氮化物半導體結構包含一個發光區域31,其被配置在n類型區域和p類型區域之間,生長在生長基材上(未顯示)。部分p類型區域和發光區域被蝕刻除去以暴露部分n類型區域。經常係反光接點的p和n接觸部39和38被形成在每個該半導體結構的p類型區域和n類型區域的暴露部分上。半導體結構12通過P和n-互連42和41被電氣和實體連接到一個固定件43,其可以是比如焊劑或金互連。
在把半導體結構12固定在固定件43上之前,其中或以後,底部填充材料37或許被注入半導體結構12和固定件43之間的任何空間。底部填充材料37支援半導體結構12防止或減少開裂或其他由移動增長基材而造成的損壞。底部填充材料37或許被形成使得側壁37延伸更長甚至超過了半導體結構12的邊緣。根據圖2中顯示的定位,增長基材被移
動以後,半導體結構12的頂面被暴露了。半導體結構12的表面或許是粗糙的或要不然變形來提高光抽取,比如通過光電化學蝕刻。
冷光陶瓷30被附上半導體結構12的頂面。一層透明材料36被配置在半導體結構12和冷光陶瓷30之間。儘管材料36在這裏被描述成透明的,但是應瞭解材料36不需要完全透明,儘管在大多數實施例中,最好材料36不吸收大量的光。在一些實施例中,透明材料36作為一種黏合劑使冷光陶瓷30和半導體結構12附在一起。底部填充材料的側壁37可以包含透明材料36邊上的寬度。
在本發明的一些實施例中,產生散射的材料被形成在與半導體發光裝置連接的冷光陶瓷上,如圖4裝置中的橫截面視圖。如在圖2中,在圖4的裝置中,冷光陶瓷被連接到固定在固定件上的III族氮化物半導體結構,比如通過一透明黏合劑層,如聚矽氧,環氧樹脂或溶膠凝膠,或者直接晶圓接合至安裝在一安裝件上之III-氮化物半導體結構。透明材料36被形成在冷光陶瓷30上。在本發明的一些實施例中,配置在半導體結構12和冷光陶瓷30之間的透明材料層,如圖2中所示,可以結合形成在冷光陶瓷上的透明材料層,如圖4所示。
配置在圖2或圖4的透明材料36內部的是作為散射中心的微粒物45。透明材料36可以負載足夠的微粒物45以充分散射來減少或消滅上面描述的黃色光圈問題。透明材料36有一個厚度,比如在0.5 μm和50 μm之間,跟冷光陶瓷相
比,其一般有比100 μm還大的厚度。在一些實施例中,散射微粒物45是非波長轉換材料。散射微粒物45被選擇成使得在透明材料36之間有不同的折射率,而且散射微粒物45要盡可能的大。比如,透明材料36有一在1.4和1.5之間的折射率,這種情況是,比如環氧樹脂或聚矽氧。散射微粒物有一在1.8和2.4之間的折射率,這種情況是,比如摻雜或無摻雜Y3
Al5
O12
或ZnS。折射率越接近,越多的散射微粒物45必須被配置在透明材料36中以達到給定數量的散射。作為散射微粒物45的合適材料的例子包含釔氧化物如Y2
O3
、鈦氧化物、鍶氧化物和銣氧化物。在一些實施例中,合適的微粒物有一在0.5 λ和20 λ之間的平均直徑,其中λ是由發光區域散發的發光裝置中的波長。在一些實施例中,微粒物合適的體積填充因數在透明材料36體積的百分之十和百分之五十之間,微粒物合適的數密度是每(5λ)3
一微粒物。微粒物的大小和微粒物的數密度都依賴於透明材料36和微粒物45之間的折射率的不同。
在一些實施例中,散射微粒物45是螢光體微粒物,比如發紅光的螢光體微粒物。合適的發紅光的螢光體微粒物包含eCAS,BSSNE,SSONE,以及(Ca1-x
Srx
)S:Eu2+
,其中0<x1,包含比如CaS:Eu2+
和SrS:Eu2+
;以及(Sr1-x-y
Bax
Cay
)2-z
Si5-a
Ala
N8-a
Oa
:Euz 2+
,其中0a<5,0<x1,0y1,和0<z1,包含比如Sr2
Si5
N8
:Eu2+
。eCAS,其是Ca1-x
AlSiN3
:Eux
,可以由5.436g Ca3
N2
(>98%純度),4.099 gAlN(99%),4.732 g Si3
N4
(>98%純度)和0.176 g Eu2
O3
(99.99%純度)合成。該等粉末被用行星球磨混合,且在H2
/N2
(5/95%)環境下以1500℃溫度燒四個小時。BSSNE,其是Ba2-x-z
Mx
Si5-y
Aly
N8-y
Oy
:Euz
(M=Sr,Ca;0x1,0y4,0.0005z0.05),可以由碳熱還原合成,其包含以2-丙醇作為分散劑用行星球磨混合60 g BaCO3
,11.221 g SrCO3
和1.672 g Eu2
O3
(所有99.99%純度)。烘乾以後,該混合物被在氣體環境中以1000℃溫度燒4小時,且使得獲得的10 g Ba0.8
Sr0.2
O:Eu(2%)被混合入5.846 g Si3
N4
(>98%純度),0.056 g AlN(99%純度)和1.060g石墨(微晶級)。該粉末被用行星球磨徹底混合20分鐘,且在氣體環境中以1450℃溫度燒四小時來獲得Ba2-x-z
Mx
Si5-y
Aly
N8-y
Oy
:Euz
(M=Sr,Ca;0x1,0y4,0.0005z0.05)的粉末。SSONE可以通過混合80.36 g SrCO3
(99.99%純度),20.0 g SiN4/3
(>98%純度)和2.28 g Eu2
O3
(99.99%純度)和在N2
/H2
(93/7)氣體環境中以1200℃溫度燒四小時製造得到。這發紅光的螢光體微粒物有一在0.5 λ和20 λ之間的平均微粒直徑,其中λ是由發光區域散發的發光裝置中的波長,以及透明材料中的濃度在體積的百分之零點一和百分之九十五之間,較佳在體積的10%和30%之間。
在一些實施例中,發紅光的螢光體微粒物被包含在透明材料36中作為散射微粒物45。半導體結構12的發光區域31散發藍色光。冷光陶瓷包含一在黃/綠光範圍內發光的螢光體。發光區域31未轉換的藍光結合冷光陶瓷散發的黃/綠光和紅光螢光體微粒物45散發的紅光使混合光顯示白
色。紅光螢光體的數量和配置在透明材料36中的紅光螢光體的摻雜級別可以被選擇以產出期望的紅光散發數量和散射數量。如果期望的紅光散發的數量必需的紅光螢光體的數量結果沒有被充分散射,那麼除了該等紅光螢光體微粒物,非波長轉換微粒物,如以上描述的微粒物,可以被包含在透明材料36中為了達到期望的散射數量。
冷光陶瓷30可以由任何合適的螢光體形成。合適的黃/綠發光螢光體包含鋁石榴石螢光體,其一般化學式(Lu1-x-y-a-b
YX
Gdy
)3
(Al1-z
Gaz
)5
O12
:Cea
Prb
,其中0<x<,,0<y<1,0<z0.1,0<a0.2和0<b0.1,比如Lu3
Al5
O12
:Ce3+
和Y3
Al5
O12
:Ce3+
;SrSi2
N2
O2
:Eu2+
;(Sr1-u-v-x
Mgu
Cav
Bax
)(Ga2-y-z
Aly
Inz
S4
):Eu2+
包含比如SrGa2
S4
:Eu2+
;和Sr1-x
Bax
SiO4
:Eu2+
。合適的Y3
Al5
O12
:Ce3+
陶瓷可以通過如下方式被制得:40 g Y2
O3
(99.998%),32 g Al2
O3
(99.999%),和3.44 g CeO2
在異丙醇中被用1.5 kg高純度的鉛球(直徑2 mm)在轉輪平台上磨12個小時。該風乾的前體粉末然後在CO環境中以1300℃溫度被鍛燒兩個小時。獲得的YAG粉末然後在乙醇下用行星球磨(瑪瑙球)被磨碎。該陶瓷漿然後被滑澆,等到風乾後得到一個陶瓷坯體。該坯體然後在石墨板之間以1700℃溫度被燒結兩小時。
儘管上面的兩個螢光體例子包含了黃/綠發光螢光體形成冷光陶瓷和包含在透明材料中作為散射微粒物的發紅光螢光體,但是該兩種螢光體可以反過來。比如,一個上述的發紅光螢光體可以被形成冷光陶瓷和結合一包含一個上
述的黃/綠發光螢光體作為散射微粒物的透明材料層。
透明材料36可以是,比如一種有機材料,如環氧樹脂,丙烯酸類或聚矽氧,一或更多種高折射率的無機材料,或溶膠凝膠玻璃。這種材料可以被用作黏合劑把冷光陶瓷30和半導體結構12附在一起,如在圖2所示的裝置中。
高折射率材料的例子包含高折射率光學玻璃,如肖特(Schott)玻璃SF59、肖特玻璃LaSF3、肖特玻璃LaSF N18以及它們的混合物。這些玻璃可以從Duryea,Pa的肖特玻璃技術有限公司得到。其他高折射率材料的例子包含高折射率硫系玻璃,比如(Ge,Sb,Ga)(S,Se)硫系玻璃,III-V族半導體包含但不限於GaP,InGaP,GaAs和GaN,II-VI族半導體包含但不限於ZnS、ZnSe、ZnTe、CdS、CdSe和CdTe,IV族半導體和化合物包含但不限於Si和Ge,有機半導體,金屬氧化物包含但不限於鎢氧化物、鈦氧化物、鎳氧化物、鋯氧化物、銦鍚氧化物和鉻氧化物,金屬氟化物包含但不限於鎂氟化物和鈣氟化物,金屬包含但不限於Zn、In、Mg和Sn,釔鋁石榴石(YAG),磷化合物,砷化合物,銻化合物,氮化合物,高分子有機化合物和它們的混合物或合金。用高折射率無機材料膠合在2000年9月12號申請的申請案第09/660,317號中和2001年6月12號申請的申請案第09/880,204號中有更詳細的描述,其兩者都被納入在這裏作為參考。
溶膠凝膠玻璃在美國專利第6,642,618號中有更詳細的描述,其被***在這裏作為參考。在一些實施例中,冷光陶
瓷通過溶膠凝膠玻璃被附加到該裝置,一種或多種材料,如鈦、鈰、鉛、鎵、鉍、鎘、鋅、鋇或鋁的氧化物可以被包含在二氧化矽溶膠凝膠玻璃中以增加玻璃的折射率,為了更接近匹配擁有冷光陶瓷的指數和冷光陶瓷被附上的半導體結構的表面的玻璃的折射率。
這裏描述的冷光陶瓷能被結構化或模製、磨碎、機械加工、熱衝壓或磨光成期望的形狀,比如,為了增加的光抽取。比如,冷光陶瓷可以被磨成一透鏡的形狀,如圓頂透鏡或菲涅耳(Fresnel)透鏡,表面粗糙的或變形成光子晶體結構,比如形成在陶瓷中的一週期晶格。該成形的陶瓷層或許比它附的表面更小,一樣大或者更大。
圖3是一個封裝發光裝置的分解圖,在美國專利第6,274,924號中有更詳細的描述。一個散熱塞100被配置了一***成型引線。該***成型引線是,比如,一種熔鑄在金屬框架106周圍的填充塑膠材料105,其提供了一條電氣路徑。塞100可以包含一個可選的反射容器102。該發光裝置晶粒104,其可以是上面實施例中描述的任何裝置,通過一個熱貼裝固定件103被直接或間接地固定到了塞100。一個罩蓋108,其或許是一個光學透鏡,可以被加入。
已經詳細描述了本發明,熟習此項技術者將體會到給的該當前的揭示案,在不背離本發明在這裏描述的概念的本質下可對本發明做一些修改。比如,儘管這裏的例子指III族氮化物發光二極體,但是應瞭解本發明的實施例或許可延伸到其他發光裝置,包含其他材料系統如III族磷化物和
III族砷化物的裝置,以及其他結構如共振腔LEDs、雷射二極體和垂直腔表面發射雷射器。因此,不希望本發明的範圍限制於說明和描述的具體實施例。
12‧‧‧發光裝置
30‧‧‧冷光陶瓷
31‧‧‧發光區域
33‧‧‧射線
34‧‧‧射線
36‧‧‧透明材料
37‧‧‧底部填充材料
38‧‧‧n接觸部
39‧‧‧p接觸部
41‧‧‧n互連
42‧‧‧p互連
43‧‧‧固定件
45‧‧‧散射微粒物
100‧‧‧散熱塞
102‧‧‧反射容器
103‧‧‧熱貼片固定件
104‧‧‧晶粒
105‧‧‧填充塑膠材料
106‧‧‧金屬框架
108‧‧‧蓋子
圖1表示一冷光陶瓷,其被配置在一個包含了一發光層的半導體結構的上面。
圖2表示一根據本發明實施例之冷光陶瓷,其藉由一包含散射微粒物的透明材料被附接於一半導體結構。
圖3是一封裝發光裝置的分解圖。
圖4表示一根據本發明實施例之包含散射微粒物的透明材料,其被形成在連接於半導體結構之冷光陶瓷上。
12‧‧‧半導體結構
30‧‧‧冷光陶瓷
31‧‧‧發光區域
36‧‧‧透明材料
38‧‧‧n接觸部
39‧‧‧p接觸部
41‧‧‧n互連
42‧‧‧p互連
43‧‧‧固定件
45‧‧‧微粒物
Claims (13)
- 一種發光裝置,其包括:一半導體結構,其包括一配置在一n類型區域和一p類型區域之間的發光區域;一陶瓷體,其包括一第一波長轉換材料,該陶瓷體被配置在該發光區域所發之光的一路徑中;一第一層透明材料,其被配置在該發光區域所發之光的一路徑中,其中在該第一層透明材料中配置有經組態以散射該發光區域所發出的光的複數個非波長轉換微粒物;及一第二層透明材料,其被配置在該發光區域所發之光的一路徑中,其中該第二層透明材料中配置有複數個一第二波長轉換材料之微粒物;其中該第一層透明材料及該第二層透明材料中之一者係配置於該半導體結構以及該陶瓷體之間,且該陶瓷體係配置於該半導體結構以及該第一層透明材料及該第二層透明材料中之另一者之間;且其中該發光區域經組態以用來發出藍光,該第一波長轉換材料經組態以用來吸收藍光和發出黃光或綠光,且該第二波長轉換材料經組態以用來吸收藍光和發出紅光。
- 根據請求項1的發光裝置,其中該第一層及該第二層透明材料中之一者被配置在該半導體結構和該陶瓷體之間,且連接該半導體結構至該陶瓷體。
- 根據請求項1的發光裝置,其中該第一層透明材料的一厚度小於該陶瓷體的一厚度之50%。
- 根據請求項1的發光裝置,其中該等非波長轉換微粒物的一折射率和該第一層透明材料的一折射率至少相差0.4。
- 根據請求項1的發光裝置,其中該等非波長轉換微粒物係從釔氧化物、鈦氧化物、鍶氧化物和銣氧化物的群體中所選出。
- 根據請求項1的發光裝置,其中該等非波長轉換微粒物有一在0.5λ和20λ之間的平均直徑,其中λ是由該半導體結構中的該發光區域所發出的光的波長。
- 根據請求項1的發光裝置,其中該第一層透明材料係從包括聚矽氧、環氧樹脂和玻璃的群體中選出。
- 根據請求項1的發光裝置,其中該第一層透明材料層有一個在0.5μm和50μm之間的厚度。
- 根據請求項1的發光裝置,其中該半導體結構包括複數個III族-氮化物層。
- 根據請求項1的發光裝置,還進一步包括被配置在該第二層透明材料中之複數個非波長轉換微粒物。
- 根據請求項1的發光裝置,其中該第二層透明材料係從包括聚矽氧、環氧樹脂和玻璃的群體中選出。
- 根據請求項1的發光裝置,其中該第二層透明材料有一在0.5μm和50μm之間的厚度。
- 根據請求項1的發光裝置,其進一步包括:n和p的接觸 部,其被電氣連接到該n類型和p類型的區域;及一個罩蓋,其被配置在該發光區域上。
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- 2007-11-20 WO PCT/IB2007/054718 patent/WO2008096214A2/en active Application Filing
- 2007-11-20 BR BRPI0719067-0A patent/BRPI0719067A2/pt not_active Application Discontinuation
- 2007-11-20 RU RU2009123456/28A patent/RU2457582C2/ru active
- 2007-11-20 KR KR1020097012700A patent/KR20090082499A/ko not_active Application Discontinuation
- 2007-11-20 JP JP2009536860A patent/JP2010510650A/ja active Pending
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Also Published As
Publication number | Publication date |
---|---|
BRPI0719067A2 (pt) | 2013-11-26 |
US20080116467A1 (en) | 2008-05-22 |
JP2010510650A (ja) | 2010-04-02 |
RU2457582C2 (ru) | 2012-07-27 |
WO2008096214A2 (en) | 2008-08-14 |
CN101657910B (zh) | 2012-10-10 |
RU2009123456A (ru) | 2010-12-27 |
EP2106621A2 (en) | 2009-10-07 |
CN101657910A (zh) | 2010-02-24 |
EP2106621B1 (en) | 2018-08-22 |
KR20090082499A (ko) | 2009-07-30 |
TW200845456A (en) | 2008-11-16 |
US7521862B2 (en) | 2009-04-21 |
WO2008096214A3 (en) | 2009-02-26 |
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