TWI518941B - 豎立式透明無鏡發光二極體 - Google Patents
豎立式透明無鏡發光二極體 Download PDFInfo
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- TWI518941B TWI518941B TW103119282A TW103119282A TWI518941B TW I518941 B TWI518941 B TW I518941B TW 103119282 A TW103119282 A TW 103119282A TW 103119282 A TW103119282 A TW 103119282A TW I518941 B TWI518941 B TW I518941B
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- led
- light
- layer
- light emitting
- electrode
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- 230000003287 optical effect Effects 0.000 claims description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 230000005693 optoelectronics Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 125
- 239000000758 substrate Substances 0.000 description 72
- 229910052594 sapphire Inorganic materials 0.000 description 47
- 239000010980 sapphire Substances 0.000 description 47
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- 229910052751 metal Inorganic materials 0.000 description 18
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910052596 spinel Inorganic materials 0.000 description 7
- 239000011029 spinel Substances 0.000 description 7
- 239000003570 air Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000012780 transparent material Substances 0.000 description 5
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000012778 molding material Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Led Devices (AREA)
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Description
本發明係關於發光二極體(LED)之光擷取。
(注意:本申請案參考在本說明書全文中指示的若干不同公告案。此外,若干不同公告案之一列表可見諸於以下標題為"參考文獻"之章節。該些公告案之各公告案係以引用形式併入本文。)
在一傳統LED中,為了增加從LED之前側之光輸出功率,發射光係藉由一放置於基板之後側上的鏡面來加以反射或即便在藍寶石基板之後側上不存在任何鏡面之情況下且即便在接合材料在發射波長上透明之情況下,由一塗佈在引線框架上的鏡面來加以反射。然而,因為光子能量與發光物種(例如一AlInGaN多重量子井(MQW))之能帶隙能量幾乎相同,故此反射光經常由發射層(主動層)重新吸收。因而,由於由發射層對LED光之此重新吸收,故該等LED之效率或輸出功率會減少。例如,參見圖1、2及3,下面將更詳細地說明該等圖。還參見J.J.Appl.Phys.34,L797-99(1995)與J.J.Appl.Phys.43,L180-82(2004)。
在此項技術中所需的係更有效擷取光之LED結構。本發明滿足該需求。
本發明說明一種(Al,Ga,In)N發光二極體(LED),其中可在進入一成形光學元件之前從該LED之一或多個表面擷取多個方向的光並隨後將其擷取至空氣。特定言之,該LED係嵌入一成形光學元件內或組合成形光學元件,該成形光學元件包含模製成一倒轉圓錐體形狀的一環氧樹脂、玻璃、矽或其他材料,其中大多數進入該倒轉圓錐體形狀之光位於一臨界角內並被擷取。
光係在一實質上垂直於一從該成形光學元件發射光之方向的方向上從該LED發射,因為該LED之一發射表面實質上垂直於該成形光學元件之一發射表面。在此背景下,光係在一平行於該等LED的磊晶層之一平面的方向上從該成形光學元件發射。而且,可從該LED之多個側(即該LED之頂部(前)側與底部(後)側)來擷取光。此外,該LED可駐留於在一引線框架內的一透明板內,該引線框架允許從該LED之多個側擷取光。
該倒轉圓錐體形狀具有與該倒轉圓錐體形狀之基底成一角度而定位的側壁,其中該角度超過sin-1(n1/n2),n1係空氣的一折射率,而n2係該倒轉圓錐體形狀之材料的一折射率。光係由該倒轉圓錐體形狀之該等側壁反射至該倒轉圓錐體形狀之一頂部表面,用於透過該倒轉圓錐體形狀之頂部表面來發射。
該成形光學元件可成形、圖案化、紋理化或粗糙化以在該成形光學元件之頂部(即,發光)表面增加光擷取。此外,一磷光體層可位於該成形光學元件上或其內,其中該磷光體層係成形、圖案化或粗糙化以增加光擷取。
除一發射層外,該LED之所有層可能對於一發射波長透明。此外,該LED可包括一或多個透明接觸層,其中該透明接觸層係成形、圖案化、紋理化或粗糙化以增加光擷取。而且,可在該透明接觸層之前將一電流散佈層沈積在該LED上。此外,該LED可包括一透明基
板,其中該透明基板係成形、圖案化、紋理化或粗糙化以增加光擷取。
100‧‧‧藍寶石基板
102‧‧‧發射層/主動層
104‧‧‧半透明或透明電極
106‧‧‧引線框架
108‧‧‧透光環氧樹脂模製物
110‧‧‧鏡面
112‧‧‧光
114‧‧‧光
116‧‧‧光
118‧‧‧線路接合
200‧‧‧藍寶石基板
202‧‧‧發射層/主動層
204‧‧‧高反射鏡面
206‧‧‧晶粒接合
208‧‧‧引線框架
210‧‧‧透光環氧樹脂模製物
212‧‧‧光
214‧‧‧光
216‧‧‧光
300‧‧‧傳導性子基板
302‧‧‧高反射率鏡面
304‧‧‧透明ITO層
306‧‧‧p-GaN層
308‧‧‧發射或主動層
310‧‧‧n-GaN層
312‧‧‧LED發射
314‧‧‧LED發射
316‧‧‧反射光發射
317‧‧‧粗糙化
318‧‧‧擷取
400‧‧‧發射層
402‧‧‧p型層/p型GaN
404‧‧‧n型層/n型GaN
406‧‧‧藍寶石基板或圖案化藍寶石基板(PSS)
408‧‧‧ITO或ZnO
410‧‧‧歐姆接觸/接合墊
412‧‧‧透明玻璃板
414‧‧‧金屬引線框架
416‧‧‧電極
418‧‧‧電極
420‧‧‧倒轉圓錐體形狀
422‧‧‧角度
424‧‧‧接合墊
426‧‧‧線路接合
428‧‧‧線路接合
430‧‧‧光
432‧‧‧光
434‧‧‧光
436‧‧‧藍寶石基板406之後側
438‧‧‧前側/平行側/頂部
440‧‧‧LED之側面
442‧‧‧LED之側面
444‧‧‧平行側/底部
446‧‧‧LED之"頂部"
448‧‧‧LED之"底部"
450‧‧‧全等支腳/表面/側壁
452‧‧‧全等支腳/表面/側壁
500‧‧‧LED
502‧‧‧發射層
504‧‧‧藍寶石基板或圖案化藍寶石基板(PSS)
506‧‧‧透明玻璃板
508‧‧‧金屬引線框架
510‧‧‧電極
512‧‧‧電極
514‧‧‧倒轉圓錐體
516‧‧‧角度
518‧‧‧LED光
520‧‧‧前表面
522‧‧‧線路接合
524‧‧‧倒轉圓錐體形狀514之底部
600‧‧‧LED
602‧‧‧發射層
604‧‧‧藍寶石基板或圖案化藍寶石基板(PSS)
606‧‧‧透明玻璃板
608‧‧‧金屬引線框架
610‧‧‧電極
612‧‧‧電極
614‧‧‧倒轉圓錐體
616‧‧‧角度
618‧‧‧LED光
620‧‧‧前表面/頂部表面
622‧‧‧線路接合
700‧‧‧LED
702‧‧‧發射層
704‧‧‧藍寶石基板或圖案化藍寶石基板(PSS)
706‧‧‧透明玻璃板
708‧‧‧金屬引線框架
710‧‧‧電極
712‧‧‧電極
714‧‧‧倒轉圓錐體
716‧‧‧角度
718‧‧‧LED光
720‧‧‧前表面/頂部表面
722‧‧‧線路接合
724‧‧‧磷光體層
726‧‧‧磷光體層724之表面
800‧‧‧發射層
802‧‧‧n型GaN層
804‧‧‧p型GaN層
806‧‧‧ITO層
808‧‧‧第二ITO層
810‧‧‧玻璃
812‧‧‧粗糙化圓錐形表面
814‧‧‧粗糙化圓錐形表面
816‧‧‧線路接合
818‧‧‧引線框架
820‧‧‧接合墊
822‧‧‧接合墊
824‧‧‧LED之前側
826‧‧‧LED之後側
828‧‧‧LED光
830‧‧‧發射
900‧‧‧InGaN多重量子井主動層
902‧‧‧n-GaN層
904‧‧‧p-GaN層
906‧‧‧環氧樹脂層
910‧‧‧接合墊
912‧‧‧歐姆電極/接合墊
914‧‧‧ITO或ZnO
918‧‧‧孔或凹陷
920‧‧‧圓錐形表面
922‧‧‧光
1000‧‧‧InGaN多重量子井主動層
1002‧‧‧n-GaN層
1004‧‧‧p-GaN層
1006‧‧‧環氧樹脂層
1010‧‧‧窄帶Au連接
1012‧‧‧接合墊
1014‧‧‧歐姆電極/接合墊
1016‧‧‧ITO或ZnO
1018‧‧‧厚度
1020‧‧‧孔或凹陷
1022‧‧‧圓錐形表面
1100‧‧‧n型GaN層
1102‧‧‧p型GaN層
1104‧‧‧主動層
1106‧‧‧塊狀基板/尖晶石
1108‧‧‧透明接觸
1110‧‧‧n型電極
1112‧‧‧LED之前側/表面
1114‧‧‧圓錐體/紋理化表面
1116‧‧‧光擷取
1118‧‧‧LED發射
1200‧‧‧LED結構
1202‧‧‧塊狀GaN基板/尖晶石/紋理化表面
1204‧‧‧透明接觸或透明傳導電極
1206‧‧‧p接觸
1208‧‧‧n接觸/表面
1210‧‧‧圓錐體/紋理化
1300‧‧‧LED
1302‧‧‧發射層
1304‧‧‧藍寶石基板或圖案化藍寶石基板(PSS)/尖晶石基板
1306‧‧‧透明玻璃板
1308‧‧‧金屬引線框架
1310‧‧‧電極
1312‧‧‧電極
1314‧‧‧倒轉圓錐體
1316‧‧‧角度
1318‧‧‧LED光
1320‧‧‧前表面
1322‧‧‧線路接合
1324‧‧‧透明接觸層
1400‧‧‧藍色LED
1402‧‧‧綠色LED
1404‧‧‧紅色LED
1406‧‧‧透明板
1408‧‧‧白色LED光
1410‧‧‧金屬引線框架
1412‧‧‧倒轉圓錐體
1414‧‧‧角度
1416‧‧‧光混合層
1418‧‧‧藍光
1420‧‧‧綠光
1422‧‧‧紅光
1424‧‧‧表面
已參考該等圖式,各圖式中相同參考數字全文代表對應零件:
圖1、2及3係傳統LED之示意圖(斷面)。
圖4A至B、5A至B、6A至B及7A至B係在一平直藍寶石基板或一圖案化藍寶石基板(PSS)上的LED結構之示意圖(斷面)。
圖8A至B、9及10係設計以從該LED之後側擷取光的生長於一具有一引線框架之藍寶石基板上之LED結構之示意圖(斷面)。
圖11A至B及12A至B係使用一塊狀GaN、ZnO、SiC、尖晶石或其他透明材料基板生長之LED結構之示意圖,其中圖11B及12B係紋理化LED表面之掃描電子顯微圖。
圖13A至B係一使用一圖案化藍寶石基板或紋理化GaN、ZnO、SiC、尖晶石或其他透明材料基板所生長之LED結構之一示意圖。
圖14A至B係一包括藍色、綠色及紅色LED之LED結構之一示意圖。
在較佳具體實施例之以下說明中,參考形成本發明之一部分的附圖,並在附圖中藉由例示方式顯示其中可實施本發明的一特定具體實施例。應明白,可利用其他具體實施例且可進行結構變化而不脫離本發明之範疇。
概述
在下文圖式說明中,未顯示該LED結構之細節。僅顯示發射層(通常AlInGaN MQW)、p型GaN、n-GaN及藍寶石基板。當然,在該LED結構內可能存在其他層,例如一p-AlGaN電子阻障層、InGaN/GaN超晶格等。在本發明中,最重要的部分係該LED結構之表
面,因為係主要由該等磊晶晶圓之表面層或條件來決定光擷取效率。因此,在該等圖之所有圖中僅顯示該LED之一些部分(表面層)。
傳統LED結構
圖1、2及3係傳統LED結構之示意圖。
在傳統LED中,為了增加從LED之前側之光輸出功率,發射光係藉由一在藍寶石基板之後側上的鏡面來加以反射,或即便在藍寶石基板後側上不存在任何鏡面之情況下且即便在接合材料在該發射波長上透明之情況下,由一塗佈在引線框架上的鏡面來加以反射。因為光子能量與一AlInGaN多重量子井(MQW)結構之該等量子井之能帶隙能量幾乎相同,故此反射光經常由發射層(主動層)重新吸收。然而,由於由該發射層重新吸收,故減少LED之效率或輸出功率。
在圖1中,一傳統LED包括一藍寶石基板100、發射層102(主動層)、及半透明或透明電極104(例如ITO或ZnO)。該LED係使用一透光環氧樹脂模製物108而晶粒接合在一引線框架106上,在藍寶石基板100之後側上沒有任何鏡面。在此情況下,在引線框架106上的塗佈材料或引線框架106之表面變成一鏡面110。若在基板100之後側上存在一鏡面110,則該LED晶片一般係藉由一Ag漿來加以晶粒接合。主動層102向基板100發射光112並向該等電極104發射光114。發射光112係由鏡面110向電極104反射,變成反射光116,該反射光係由電極104透射以逃逸該LED。該LED係線路接合118至引線框架106。
在圖2中,除了其係一覆晶LED外,該傳統LED係類似於圖1所示。該LED包括一藍寶石基板200與發射層202(主動層)、及一高反射鏡面204。該LED係晶粒接合206至一引線框架208上並嵌入於一透光環氧樹脂模製物210內。主動層202向基板200發射光212並向高反射鏡面204發射光214。發射光214係由鏡面204向基板200反射,變成反射光216,該反射光係由基板200透射以逃逸該LED。
在圖3中,傳統LED包括一傳導性子基板300、高反射率鏡面302(其中Ag>94%反射率(R))、一透明ITO層304、一p-GaN層306、一發射或主動層308、及一n-GaN層310。該LED係在沒有該環氧樹脂模製物之情況下顯示,但仍可使用類似模製物。發射層308向鏡面302發射LED發射312並向n-GaN層310發射LED發射314。發射層308之發射312係由鏡面302來反射,其中該等反射光發射316係由發射層308來重新吸收。該LED之效率係由於此重新吸收而減小。該n-GaN層可粗糙化317以提高LED發射314之擷取318。
改良式LED結構
圖4至14係依據本發明之較佳具體實施例之改良式LED結構之示意圖。在該些圖中,顯示若干不同的光電裝置,各包含一成形光學元件與一LED,該LED係嵌入於該成形光學元件內或組合其,該成形光學元件包含模製成一倒轉圓錐體形狀的一環氧樹脂、玻璃、矽或其他透明材料,其中大多數進入該倒轉圓錐體形狀之光位於一臨界角內並被擷取。光係在一實質上垂直於一從該成形光學元件發射光之方向的方向上從該LED發射,因為該LED之一發射表面實質上垂直於該成形光學元件之一發射表面。在此背景下,光係在一平行於該等LED的磊晶層之一平面的方向上從該成形光學元件發射。因此,可在進入該成形光學元件之前從該LED之多個表面擷取多個方向的光並隨後將其擷取至空氣。此外,該LED可駐留於在一引線框架內的一透明板內,該引線框架允許從該LED之多個側擷取光。
該倒轉圓錐體形狀具有與該倒轉圓錐體形狀之基底成一角度而定位的側壁,其中該角度超過sin-1(n1/n2),n1係空氣的一折射率,而n2係倒轉圓錐體形狀之材料的一折射率。光係由該倒轉圓錐體形狀之該等側壁反射至該倒轉圓錐體形狀之一頂部表面,用於透過該倒轉圓錐體形狀之頂部表面來發射。
該成形光學元件可成形、圖案化、紋理化或粗糙化以增加光擷取。此外,一磷光體層可位於該成形光學元件上或其內,其中該磷光體層係成形、圖案化、紋理化或粗糙化以增加光擷取。
除一發射層外,該LED之所有層可能對於一發射波長透明。此外,該LED可包括一或多個透明接觸層,其中該透明接觸層係成形、圖案化、紋理化或粗糙化以增加光擷取。而且,可在該透明接觸層之前將一電流散佈層沈積在該LED上。此外,該LED可包括一透明基板,其中該透明基板係成形、圖案化、紋理化或粗糙化以增加光擷取。
特定LED結構
圖4A顯示一LED,其包括一發射層400、一p型層402、一n型層404、一藍寶石基板或圖案化藍寶石基板(PSS)406、接觸p型層402之ITO或ZnO 408、及一至n型層404之歐姆接觸410。該LED駐留於一透明玻璃板412上,該透明玻璃板係附著至具有電極416及418之一金屬引線框架414。該LED係在該倒轉圓錐體之一角度422下嵌入於一包含環氧樹脂或玻璃之倒轉圓錐體形狀420內。該LED之接合墊424係線路接合426至電極416而該LED之接合墊410係線路接合428至電極418。發射層400發射光430及432,其係反射以變成反射的LED光434。
圖4B顯示引線框架414與由玻璃420製成之倒轉圓錐體之一俯視圖。
在圖4A中,該LED結構係生長在一平直藍寶石基板或一圖案化藍寶石基板(PSS)406上,以改良透過GaN 404與藍寶石基板406之間介面的光擷取效率。
而且,藍寶石基板406之後側436(接觸板412)係粗糙化以增加從藍寶石基板406至空氣、環氧樹脂或玻璃420之光擷取。用於該粗糙化表面之最佳形狀係一圓錐形表面(例如微圓錐體)。
ITO或ZnO 408可沈積在p型GaN 402上,其中將一接合墊424形成於ITO或ZnO 408上,並在藉由一透過p型GaN 402之選擇性蝕刻曝露n型GaN 404之後,將一歐姆接觸/接合墊410形成於n型GaN 404上。
最終,該LED可嵌入於一成形光學元件內或組合其,例如模製成一倒轉圓錐體形狀420的一環氧樹脂、玻璃、矽或其他材料,從而執行更佳的光擷取。該倒轉圓錐體形狀之角度422係設計以將光反射至該裝置之前側438。
如圖4A、5A、6A及7A所示,本發明在一端440豎立該LED,即比較一傳統LED,將該倒轉圓錐體形狀內的LED位置旋轉大約90°,以便從該LED之前側438更有效地擷取光。還可使用其他旋轉角度。而且,假定在其他方向上旋轉之,則可從該LED之另一側442來擷取光。
在此範例中,當該倒轉圓錐體形狀包含一等腰梯形時,該LED之此位置導致LED之該等側面440、442分別面向梯形之該等平行側444、438,即該LED之一側面442面向該梯形之"頂部"438而該LED之另一側面440面向該梯形之"底部"444,該LED之"頂部"446與"底部"448面向該梯形之全等支腳450、452。光430、432係分別由表面450、452反射,以透過表面438逃逸倒轉圓錐體420。
而且,在此範例中,空氣之折射率係n1=1,而用於該倒轉圓錐體形狀之環氧樹脂之折射率係n2=1.5。因而,用於反射之臨界角係sin-1(1/1.5)。因此,圖4A、5A、6A及7A所示之倒轉圓錐體422、516、616及716之角度應超過sin-1(1/1.5)。LED光係從該倒轉圓錐體形狀之頂部表面438或從一平行於該LED之磊晶層之方向而有效地加以擷取。
還應注意,用於電源供應之陽極電極416及陰極電極418可穿過倒轉圓錐體形狀420之一側壁450、452、頂部438或底部444。
圖5A顯示一LED 500,其包括一發射層502與一藍寶石基板或圖案化藍寶石基板(PSS)504。LED 500坐落於一透明玻璃板506上,該透明玻璃板係附著至具有電極510及512之一金屬引線框架508。LED 500係嵌入於一由環氧樹脂或玻璃製成的倒轉圓錐體514內,具有一角度516。發射層502發射LED光518,該LED光係由倒轉圓錐體514反射至前表面520外。LED 500係線路接合522至金屬引線框架508。
圖5B顯示引線框架508與由玻璃製成之倒轉圓錐體514之一俯視圖。
在圖5A中,用於電源供應之陽極電極512及陰極電極510穿過倒轉圓錐體形狀514之底部524。否則,圖5A之結構與圖4A所示的相同。
圖6A顯示一LED 600,其包括一發射層602與一藍寶石基板或圖案化藍寶石基板(PSS)604。LED 600係附著至一透明玻璃板606,該透明玻璃板係附著至一金屬引線框架608,該金屬引線框架具有電極610及612。LED 600係嵌入於一由環氧樹脂或玻璃所製成之倒轉圓錐體614內,具有一角度616。發射層602發射LED光618,該LED光係由倒轉圓錐體614反射至前表面620外。LED 600係線路接合622至金屬引線框架608。
圖6B顯示引線框架608與由玻璃製成的倒轉圓錐體614之一俯視圖。
在圖6A中,圖5之倒轉圓錐體形狀514之頂部表面620係粗糙化以改良來自模製物614之光擷取。
圖7A顯示一LED 700,其包括一發射層702與一藍寶石基板或圖案化藍寶石基板(PSS)704。LED 700坐落於一透明玻璃板706上,該透明玻璃板係附著至一金屬引線框架708,該金屬引線框架具有電極710及712。LED 700係嵌入於一由環氧樹脂或玻璃所製成之倒轉圓錐體
714內,具有一角度716。發射層702發射LED光718,該LED光係由倒轉圓錐體714反射至前表面720外。LED 700係線路接合722至金屬引線框架708。
圖7B顯示引線框架708與由玻璃製成的倒轉圓錐體714之一俯視圖。
在圖7A中,將一磷光體層724放置於倒轉圓錐體形狀714之頂部表面720附近。較佳的係,磷光體層724應儘可能地遠離LED 700而放置。在此情況下,由於由該磷光體層向該LED少量向後散射引起小量重新吸收LED光,故增加藍光至白光之轉換效率。還應注意,可粗糙化磷光體層724之表面726以改良透過磷光體724之光擷取。
圖8、9及10係設計以從該LED之後側擷取光的生長於一具有一引線框架之藍寶石基板上之LED結構之示意圖。
圖8A係說明一LED之一示意圖,其包含一發射層800、一n型GaN層802、一p型GaN層804、一ITO層806、及在玻璃810上的一第二ITO層808。該LED之GaN具有一粗糙化圓錐形表面812而玻璃810具有一粗糙化圓錐形表面814。該LED係經由該等LED之接合墊820、822而附著並線路接合816至一引線框架818。
圖8B顯示引線框架818之一俯視圖。
在圖8A中,該LED結構係生長在一藍寶石基板。ITO 806係沈積在一p型GaN層804上。ITO塗佈玻璃810係使用一環氧樹脂作為一膠水而附著至ITO 806。玻璃810之另一側814係藉由一噴砂步驟來加以粗糙化。該藍寶石基板係使用雷射脫層技術來移除。使用濕式蝕刻(例如使用KOH或HCL)來蝕刻氮面GaN。最後,將一圓錐形表面812形成於氮面GaN上。
該LED係放置於一引線框架818上,該引線框架用以從該LED移除熱。在該LED與引線框架818之接合墊820、822之間執行線路接合
816,以使電流流過引線框架818。
在該LED之前側824或後側826處不存在任何有意鏡面,因此發射並未反射。而且,該引線框架818係設計以從該LED之後側826有效地擷取光。因而,有效地從該LED之兩側824、826擷取LED光828。該等粗糙化表面812及814增加擷取光828之透射。而且,由於沒有重新吸收該等發射830,故增加該LED之效率。所有發射830均可離開該半導體。
可將一歐姆接觸放置於該n-GaN之接合墊下面,但在圖8A中未顯示。
圖9係一說明一LED之一示意圖,該LED包含一InGaN多重量子井主動層900、一n-GaN層902、一p-GaN層904、一環氧樹脂層906(大約400微米厚908)、一接合墊910、一歐姆電極/接合墊912、及ITO或ZnO 914。n-GaN 902、主動層900及p-GaN層904之厚度916係大約5微米。
圖10係一說明一LED之一示意圖,該LED包含一InGaN多重量子井主動層1000、一n-GaN層1002、一p-GaN層1004、一環氧樹脂層1006(大約400微米厚1008)、一窄帶Au連接1010、一接合墊1012、一歐姆電極/接合墊1014、及ITO或ZnO 1016。n-GaN 1002、主動層1000及p-GaN層1004之厚度1018係大約5微米。
在圖9及10中,使用一較厚環氧樹脂906、1006,而不是圖8A所示之玻璃810。為了進行電性接觸,部分移除環氧樹脂906、1006,並在環氧樹脂906、1006上以及在環氧樹脂906、1006之表面內的一孔或凹陷918、1020內沈積ITO 914或一Au窄帶1010。否則,圖9及10之結構與圖8所示的相同。一圓錐形表面920、1022係在氮面GaN上。圓錐形表面920、1022提高光922之擷取。
而且在圖8、9及10中,若取代一藍寶石基板使用一GaN基板,則不需要雷射脫層步驟,由此,也不需要玻璃810及厚環氧樹脂906、
1006子基板。在該GaN基板上生長該LED結構之後,將ITO 914沈積在p型GaN 904上並使用一濕式蝕刻(例如KOH及HCL)來蝕刻該GaN基板(即,氮面GaN)之後側。接著將一圓錐形表面920形成於氮面GaN上。否則,該結構與圖8所示的相同。
此外,當粗糙化ITO 914之表面時,增加透過ITO 914之光擷取。在p型GaN 904上沒有ITO 914之情況下,粗糙化p型GaN 904之表面有效地增加透過p型GaN 904之光擷取。
最後,在氮面GaN之表面粗糙化之後使用用於n型GaN 912、ITO或ZnO之一歐姆接觸。
應注意,ITO及ZnO 914具有一類似GaN之折射率,由此,最小化在ITO或ZnO 914與該GaN之間介面處的光反射。
圖11A說明一LED結構,其包含一n型GaN層1100、p型GaN層1102、主動層1104、塊狀基板1106、透明接觸1108、及n型電極1110。在圖11中,該LED之前側1112係紋理化成圓錐體1114,以提高LED發射1118之光擷取1116。
圖12A說明在一塊狀GaN基板1202上的一LED結構,其具有一透明接觸或透明傳導電極1204、一p接觸1206及一n接觸1208。在圖12A中,基板1202之後側係紋理化成圓錐體1210(紋理化表面)。
圖11A及12A係使用一塊狀GaN、ZnO、SiC、尖晶石1106、1202或其他透明材料基板所生長之LED結構1200之示意圖。應注意,可紋理化1210、1114基板1106、1202之表面1208、1112,如圖11B及12B所示。圖11B係基板1106之紋理化表面1114之一影像,而圖12B係基板1210之紋理化表面1202之一影像。
圖13A顯示一LED 1300,其包括一發射層1302與一藍寶石基板或圖案化藍寶石基板(PSS)1304。LED 1300坐落於一透明玻璃板1306上,該透明玻璃板係附著至一金屬引線框架1308,該金屬引線框架具
有電極1310及1312。LED 1300係嵌入於一由環氧樹脂或玻璃所製成之倒轉圓錐體1314內,具有一角度1316。發射層1302發射LED光1318,該LED光係由倒轉圓錐體1314反射至前表面1320外。LED 1300係線路接合1322至金屬引線框架1308。LED 1300還具有一透明接觸層1324(例如,ITO或ZnO)。
圖13B顯示引線框架1308與由玻璃製成的倒轉圓錐體1314之一俯視圖。
圖13A係一使用一圖案化藍寶石基板或紋理化GaN、ZnO、SiC、尖晶石基板1304或其他透明材料基板所生長之LED結構之一示意圖。應注意,可紋理化1322基板1304。
圖14A係一LED結構之一示意圖,該LED結構包括藍色LED 1400、綠色LED 1402及紅色LED 1404或放置在透明板1406上的LED發射層,以便從三原色LED 1400、1402及1404來製造白色LED光1408。透明板1406(例如玻璃)坐落於一金屬引線框架1410上。該等LED係嵌入於一模製材料內,例如一由環氧樹脂或玻璃所製成之倒轉圓錐體1412,具有一角度1414,其中倒轉圓錐體1412包含一光混合層1416。由該等發光層1400、1402及1404所發射之藍光1418、綠光1420及紅光1422係由該等表面1424向光混合層1416反射,層1416混合藍光1418、綠光1420及紅光1422以產生從倒轉圓錐體1414所擷取之白光1408。
圖14B顯示引線框架1410與由玻璃製成的倒轉圓錐體1412之一俯視圖。
較佳的係,藍色LED 1400、綠色LED 1402及紅色1404 LED晶片之數目係調整以製造一最佳白光LED。可將一光混合層1416放置於模製材料1414內部,以便藉由混合三原色的光(紅光1422、藍光1418及綠光1420)來產生白光1408。光混合層1416還可執行該混合光之一均
勻擴散,即將光擴散層1416置於該模製材料內部以均勻地擴散光。
參考文獻
下列參考文獻係以引用形式併入本文:
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結論
此總結本發明之較佳具體實施例的說明。出於例示及說明目的,已呈現本發明之一或多個具體實施例。不希望其詳盡無遺或要將本發明限於所揭示的精確形式。根據以上教導,可進行許多修改及變更。
400‧‧‧發射層
402‧‧‧p型層/p型GaN
404‧‧‧n型層/n型GaN
406‧‧‧藍寶石基板或圖案化藍寶石基板(PSS)
408‧‧‧ITO或ZnO
410‧‧‧歐姆接觸/接合墊
412‧‧‧透明玻璃板
414‧‧‧金屬引線框架
416‧‧‧電極
418‧‧‧電極
420‧‧‧倒轉圓錐體形狀
422‧‧‧角度
424‧‧‧接合墊
426‧‧‧線路接合
428‧‧‧線路接合
430‧‧‧光
432‧‧‧光
434‧‧‧光
436‧‧‧藍寶石基板406之後側
438‧‧‧前側/平行側/頂部
440‧‧‧LED之側面
442‧‧‧LED之側面
444‧‧‧平行側/底部
446‧‧‧LED之「頂部」
448‧‧‧LED之「底部」
450‧‧‧全等支腳/表面/側壁
452‧‧‧全等支腳/表面/側壁
Claims (10)
- 一種光電裝置,包含:一可透光載板;一發光二極體,設置在該可透光載板上且發射一光,其中,該光可由該發光二極體的多個側面來擷取;一光學元件,包覆該發光二極體,且具有一底部;以及一第一電極及一第二電極,分別電連接至該發光二極體並穿過該底部。
- 如請求項1之光電裝置,其中,該發光二極體具有一與該底部實質上垂直之發射表面。
- 如請求項1之光電裝置,其中,該光學元件包含玻璃。
- 如請求項1之光電裝置,更包含一線路,電連接該發光二極體至該第一電極或該第二電極。
- 如請求項1之光電裝置,其中,該光學元件包含一磷光體。
- 如請求項1之光電裝置,其中,該第一電極與該第二電極係自該底部往同一方向延伸。
- 一種光電裝置,包含:一載板;一發光結構,設置在該載板上,並包含複數個發光二極體;一光學元件,包覆該發光結構及該載板;以及一第一電極及一第二電極,電連接至該發光結構並自該光學元件之同一側向外突出;其中,該發光結構可發出一光,且該光可由該發光結構之多個側面被擷取。
- 如請求項7之光電裝置,其中,該發光結構可發出一白光。
- 如請求項7之光電裝置,其中,該載板係可被該光穿透。
- 如請求項7之光電裝置,其中,該複數個發光二極體包含一藍光發光二極體。
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2007
- 2007-11-15 TW TW103119282A patent/TWI518941B/zh active
- 2007-11-15 WO PCT/US2007/023970 patent/WO2008060585A2/en active Application Filing
- 2007-11-15 TW TW104138298A patent/TWI633679B/zh active
- 2007-11-15 US US11/940,883 patent/US7687813B2/en active Active
- 2007-11-15 TW TW096143249A patent/TWI446569B/zh active
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2010
- 2010-03-03 US US12/716,650 patent/US8022423B2/en active Active
Also Published As
Publication number | Publication date |
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US8022423B2 (en) | 2011-09-20 |
TWI446569B (zh) | 2014-07-21 |
US7687813B2 (en) | 2010-03-30 |
WO2008060585A2 (en) | 2008-05-22 |
TW201608733A (zh) | 2016-03-01 |
TW200834991A (en) | 2008-08-16 |
TW201436278A (zh) | 2014-09-16 |
US20100155762A1 (en) | 2010-06-24 |
WO2008060585A8 (en) | 2008-11-27 |
WO2008060585A3 (en) | 2008-08-14 |
US20080111146A1 (en) | 2008-05-15 |
TWI633679B (zh) | 2018-08-21 |
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