TWI514515B - - Google Patents
Info
- Publication number
- TWI514515B TWI514515B TW101151256A TW101151256A TWI514515B TW I514515 B TWI514515 B TW I514515B TW 101151256 A TW101151256 A TW 101151256A TW 101151256 A TW101151256 A TW 101151256A TW I514515 B TWI514515 B TW I514515B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210234307.9A CN102737984B (zh) | 2012-07-06 | 2012-07-06 | 半导体结构的形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201403753A TW201403753A (zh) | 2014-01-16 |
| TWI514515B true TWI514515B (zh) | 2015-12-21 |
Family
ID=46993249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101151256A TW201403753A (zh) | 2012-07-06 | 2012-12-28 | 半導體結構的形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102737984B (zh) |
| TW (1) | TW201403753A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681406B (zh) * | 2013-11-29 | 2020-03-31 | 中微半导体设备(上海)股份有限公司 | 等离子体刻蚀方法 |
| CN107507772B (zh) * | 2017-08-31 | 2021-03-19 | 长江存储科技有限责任公司 | 一种沟道孔底部刻蚀方法 |
| CN111952286B (zh) * | 2019-05-16 | 2022-11-22 | 芯恩（青岛）集成电路有限公司 | 一种电容器的制造方法及结构 |
| CN112447597A (zh) * | 2019-09-02 | 2021-03-05 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及形成方法 |
| CN111508929B (zh) * | 2020-04-17 | 2022-02-22 | 北京北方华创微电子装备有限公司 | 图形片及半导体中间产物 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365504B1 (en) * | 1999-10-15 | 2002-04-02 | Tsmc-Acer Semiconductor Manufacturing Corporation | Self aligned dual damascene method |
| CN1433062A (zh) * | 2002-01-10 | 2003-07-30 | 联华电子股份有限公司 | 在低介电常数材料层中形成开口的方法 |
| US20070023394A1 (en) * | 2005-07-27 | 2007-02-01 | Sumitomo Precision Products Co., Ltd. | Etching Method and Etching Apparatus |
| TW200710988A (en) * | 2005-04-06 | 2007-03-16 | Infineon Technologies Ag | Method for etching a trench in a semiconductor substrate |
| US20100171223A1 (en) * | 2009-01-05 | 2010-07-08 | Chen-Cheng Kuo | Through-Silicon Via With Scalloped Sidewalls |
| TW201103088A (en) * | 2009-07-01 | 2011-01-16 | Sumitomo Precision Prod Co | Method for manufacturing silicon structure, apparatus for manufacturing the same, and program for manufacturing the same |
| CN101958244A (zh) * | 2009-07-21 | 2011-01-26 | 中微半导体设备(上海)有限公司 | 深反应离子刻蚀方法及其气体流量控制装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2918892B2 (ja) * | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | プラズマエッチング処理方法 |
| JP4065213B2 (ja) * | 2003-03-25 | 2008-03-19 | 住友精密工業株式会社 | シリコン基板のエッチング方法及びエッチング装置 |
-
2012
- 2012-07-06 CN CN201210234307.9A patent/CN102737984B/zh active Active
- 2012-12-28 TW TW101151256A patent/TW201403753A/zh unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365504B1 (en) * | 1999-10-15 | 2002-04-02 | Tsmc-Acer Semiconductor Manufacturing Corporation | Self aligned dual damascene method |
| CN1433062A (zh) * | 2002-01-10 | 2003-07-30 | 联华电子股份有限公司 | 在低介电常数材料层中形成开口的方法 |
| TW200710988A (en) * | 2005-04-06 | 2007-03-16 | Infineon Technologies Ag | Method for etching a trench in a semiconductor substrate |
| US20070023394A1 (en) * | 2005-07-27 | 2007-02-01 | Sumitomo Precision Products Co., Ltd. | Etching Method and Etching Apparatus |
| US20100171223A1 (en) * | 2009-01-05 | 2010-07-08 | Chen-Cheng Kuo | Through-Silicon Via With Scalloped Sidewalls |
| TW201103088A (en) * | 2009-07-01 | 2011-01-16 | Sumitomo Precision Prod Co | Method for manufacturing silicon structure, apparatus for manufacturing the same, and program for manufacturing the same |
| CN101958244A (zh) * | 2009-07-21 | 2011-01-26 | 中微半导体设备(上海)有限公司 | 深反应离子刻蚀方法及其气体流量控制装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102737984A (zh) | 2012-10-17 |
| CN102737984B (zh) | 2015-08-05 |
| TW201403753A (zh) | 2014-01-16 |