TWI513530B - Laser annealing method, apparatus and microlen sarray - Google Patents
Laser annealing method, apparatus and microlen sarray Download PDFInfo
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- 238000005224 laser annealing Methods 0.000 title claims description 40
- 238000000034 method Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 49
- 229910052732 germanium Inorganic materials 0.000 claims description 28
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 28
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 41
- 239000011295 pitch Substances 0.000 description 31
- 239000011521 glass Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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Description
本發明係關於一種，薄膜電晶體液晶面板等之中，將非晶矽膜藉由雷射光之照射退火而形成低溫多晶矽膜的雷射退火方法、裝置及使用於其之微透鏡陣列，特別係關於一種，使用微透鏡陣列，可僅於應形成薄膜電晶體之區域退火的雷射退火方法及裝置。The present invention relates to a laser annealing method and apparatus for forming a low-temperature polycrystalline germanium film by annealing an amorphous germanium film by irradiation of laser light, and a microlens array used therefor, particularly in a thin film transistor liquid crystal panel or the like. Regarding one type, a laser annealing method and apparatus which can be annealed only in a region where a thin film transistor should be formed using a microlens array.
液晶面板中，於玻璃基板上形成非晶矽膜，對此非晶矽膜，由基板之一端，將具有線狀之光束形狀的雷射光，藉由與該光束之長邊方向垂直方向的掃瞄，形成低溫多晶矽膜。藉由此一線狀之雷射光掃瞄，非晶矽膜由雷射光加熱並先熔融，之後，使藉雷射光之通過而熔融之矽急冷，經由凝固而結晶化，形成低溫多晶矽膜(專利文獻1)。In the liquid crystal panel, an amorphous germanium film is formed on the glass substrate, and the amorphous germanium film has a linear beam shape of the laser light from one end of the substrate, and is scanned in a direction perpendicular to the longitudinal direction of the light beam. Aiming, forming a low temperature polycrystalline tantalum film. By this linear laser scanning, the amorphous ruthenium film is heated by the laser light and melted first, and then the ruthenium which is melted by the passage of the laser light is quenched and crystallized by solidification to form a low-temperature polycrystalline ruthenium film (Patent Literature) 1).
然而，此一低溫多晶矽膜之形成方法中，非晶矽膜之全體接受雷射光之照射形成高溫，藉非晶矽膜之熔融凝固，全體成為低溫多晶矽膜。因此，因應形成薄膜電晶體(Thin Film Transistor,以下以TFT稱之)區域以外的區域亦被退火，故有處理效率不佳之問題。However, in the method for forming a low-temperature polycrystalline germanium film, the entire amorphous germanium film is irradiated with laser light to form a high temperature, and the amorphous germanium film is melt-solidified, and the whole becomes a low-temperature polycrystalline germanium film. Therefore, since the region other than the region where the thin film transistor (hereinafter referred to as TFT) is formed is also annealed, there is a problem that the processing efficiency is not good.
因此，有文獻提案：使用微透鏡陣列，藉由各微透鏡，於非晶矽膜上，使雷射光聚光於微小的複數個區域，在對應於各電晶體之微小區域上，同時個別地照射雷射光並退火之方法(專利文獻2)。此一方法，因僅對複數個的TFT形成預定區域之非晶矽膜加以退火處理，故有雷射光之利用效率變高的優點。Therefore, there is a proposal in the literature to use a microlens array to condense laser light onto a small number of regions on an amorphous germanium film by means of microlenses, on a small area corresponding to each transistor, and individually A method of irradiating laser light and annealing (Patent Document 2). In this method, since only the amorphous ruthenium film in which a plurality of TFTs are formed in a predetermined region is annealed, there is an advantage that the utilization efficiency of the laser light is increased.
專利文獻1：日本特許第3945805號公報Patent Document 1: Japanese Patent No. 3945805
專利文獻2：日本特開2004-311906號公報Patent Document 2: Japanese Laid-Open Patent Publication No. 2004-311906
然而，此一使用習知之微透鏡陣列的雷射退火方法中，因微透鏡陣列之配列間距被固定，故必須以與之相合的間距設置TFT形成區域，抑或以與TFT形成預定區域之位置相合的間距組裝微透鏡陣列，具有通用性低之問題。However, in the laser annealing method using the conventional microlens array, since the arrangement pitch of the microlens array is fixed, it is necessary to set the TFT formation region at a pitch corresponding thereto, or to coincide with the position at which the TFT forms a predetermined region. The pitch is assembled with a microlens array, which has a problem of low versatility.
鑑於此一問題，本發明之目的在於提供一可由與非晶矽膜的電晶體形成預定區域之間距相異的大間距構成微透鏡陣列，另，提供一可由較微透鏡陣列之配列間距更小的間距，於非晶矽膜上藉由雷射退火形成微小多晶矽膜區域之雷射退火方法、裝置及微透鏡陣列。In view of this problem, it is an object of the present invention to provide a microlens array which can be formed by a large pitch which is different from a predetermined area of a crystal formed of an amorphous germanium film, and which provides a smaller arrangement pitch of the microlens array. The laser annealing method, apparatus, and microlens array for forming a microcrystalline polysilicon film region by laser annealing on an amorphous germanium film.
本發明之雷射退火方法使用之雷射光照射裝置，具有：微透鏡陣列，於m(m為自然數)列配置有各列複數個之微透鏡；光罩，具有與各微透鏡對應之開口部；雷射光之產生源；導光部，將來自此產生源之雷射光引導至該光罩與微透鏡；以及驅動機構，將包含該光罩及微透鏡的雷射光之照射系統，與基板相對地在和該微透鏡之列垂直之方向移動；該雷射退火方法之特徵為：該m列之微透鏡，每n(n為自然數，n＜m)列構成一群，於各群之中，使微透鏡以同一間距P配列；各群相互之間，微透鏡以P+P/n分隔；第1步驟中，自n列分之微透鏡，對於該基板上之非晶矽膜照射第1次雷射光，以施行雷射退火；第2步驟中，於該雷射光之照射系統與該基板相對地移動n×P距離之時點，自2×n列分之微透鏡，於基板上之非晶矽膜照射第2次雷射光，以施行雷射退火；其後以同樣方式施行多數次之雷射光照射，以P/n間距形成雷射退火區域。The laser light irradiation device used in the laser annealing method of the present invention comprises: a microlens array in which a plurality of microlenses of each column are arranged in a m (m is a natural number) column; and a photomask having openings corresponding to the respective microlenses a light source for generating laser light; a light guiding portion for guiding laser light from the source to the reticle and the microlens; and a driving mechanism for illuminating the laser light including the reticle and the microlens, and the substrate Relatively moving in a direction perpendicular to the column of the microlenses; the laser annealing method is characterized in that: the microlens of the m columns, each n (n is a natural number, n < m) column constitutes a group, in each group The microlenses are arranged at the same pitch P; the microlenses are separated by P+P/n between the groups; in the first step, the microlenses from the n columns are irradiated to the amorphous germanium film on the substrate. The first laser light is subjected to laser annealing; in the second step, the microlens from the 2×n column is on the substrate when the irradiation system of the laser light moves relative to the substrate by n×P distance The amorphous ruthenium film irradiates the second laser light to perform laser annealing; thereafter in the same manner Most of the line followed by irradiating laser light to P / n pitch region formed laser annealing.
此外，本發明之雷射退火裝置具有：微透鏡陣列，於m(m為自然數)列配置有各列複數個之微透鏡；光罩，具有與各微透鏡對應之開口部；雷射光之產生源；導光部，將來自此產生源之雷射光引導至該光罩與微透鏡；驅動機構，將包含該光罩及微透鏡的雷射光之照射系統，與基板相對地在和該微透鏡之列垂直之方向移動；以及控制裝置，控制該驅動機構之動作與該產生源之動作；該雷射退火裝置之特徵為：該m列之微透鏡，每n(n為自然數，n＜m)列構成一群，於各群之中，使微透鏡以同一間距P配列；各群相互之間，微透鏡以P+P/n分隔；該控制裝置，控制該驅動機構及該產生源，於第1步驟中，自n列分之微透鏡，對於該基板上之非晶矽膜照射第1次雷射光，以施行雷射退火；於第2步驟中，於該雷射光之照射系統與該基板相對地移動n×P距離之時點，自2×n列分之微透鏡，於基板上之非晶矽膜照射第2次雷射光，以施行雷射退火；之後相同，施行多數次之雷射光照射，以P/n間距形成雷射退火區域。Further, the laser annealing apparatus of the present invention has a microlens array in which a plurality of microlenses of each row are arranged in a m (m is a natural number) row; a photomask having an opening corresponding to each microlens; and a laser beam a light source for guiding the laser light from the source to the reticle and the microlens; and a driving mechanism for illuminating the laser light including the reticle and the microlens, opposite to the substrate Moving the column of the lens in a vertical direction; and controlling means for controlling the action of the driving mechanism and the action of the generating source; the laser annealing device is characterized by: the microlens of the m columns, each n (n is a natural number, n The <m) column constitutes a group in which the microlenses are arranged at the same pitch P; the groups are separated from each other by a P+P/n; the control device controls the driving mechanism and the generating source In the first step, the microlens from the n column is irradiated with the first laser light on the amorphous germanium film on the substrate to perform laser annealing; and in the second step, the laser light is irradiated in the second step. The point at which the n×P distance is moved relative to the substrate, from the 2×n column Microlens amorphous silicon film is irradiated to a laser beam on the 2nd of the substrate to laser annealing purposes; after the same, followed by the implementation of most of the irradiation laser beam to P / n pitch region formed laser annealing.
進一步，本發明之微透鏡陣列被使用於雷射光之照射裝置，m(m為自然數)列配置有各列複數個之微透鏡的微透鏡陣列中，該m列之微透鏡，每n(n為自然數，n＜m)列構成一群，於各群之中，使微透鏡以同一間距P配列；各群相互之間，微透鏡以P+P/n分隔。Further, the microlens array of the present invention is used in an apparatus for irradiating laser light, and m (m is a natural number) is arranged in a microlens array in which a plurality of microlenses are arranged, and the microlenses of the m columns are each n ( n is a natural number, and n<m) columns constitute a group, and among the groups, the microlenses are arranged at the same pitch P; the microlenses are separated by P+P/n between the groups.
依本發明，因群之最後列的微透鏡與最前列的微透鏡之間，隔著P+P/n之間隔，而若於雷射光之照射系統與基板相對地移動，使移動距離為n×P之時點，照射雷射光，則微透鏡陣列的間距P之間可設(n-1)列的雷射光照射區域。亦即，微透鏡其各群之配列間距為P之中，可設n列之照射區域，可使照射區域之配列間距微細。藉此，可由與非晶矽膜的電晶體形成預定區域之間距相異的大間距構成微透鏡陣列，並且，可由較微透鏡陣列之配列間距更小的間距於非晶矽膜雷射退火藉以形成微小多晶矽膜區域。According to the present invention, the distance between the microlens in the last row of the group and the microlens in the front row is separated by P+P/n, and if the irradiation system of the laser light moves relative to the substrate, the moving distance is n. At the time of ×P, when the laser light is irradiated, the laser light irradiation region of (n-1) columns may be provided between the pitches P of the microlens array. That is, the arrangement pitch of each group of the microlenses is P, and the irradiation area of n columns can be provided, and the arrangement pitch of the irradiation regions can be made fine. Thereby, the microlens array can be constituted by a large pitch which is different from the predetermined area of the amorphous crystal film forming a predetermined region, and the laser can be annealed by the amorphous germanium film by a pitch smaller than the arrangement pitch of the microlens array. A small polycrystalline ruthenium film region is formed.
以下，對本發明之最佳實施態樣，參考添附之附圖具體地加以說明。圖1為顯示使用微透鏡5之雷射照射裝置的圖。圖1所示之雷射照射裝置，於製造如逆交錯構造之薄膜電晶體的半導體裝置其步驟中，例如，僅對其通道區形成預定區域照射雷射光並退火，使此一通道區形成預定區域多結晶化，形成多晶矽膜之裝置。此一使用微透鏡5之雷射退火裝置，自光源1出射之雷射光，由透鏡群2整形為平行光束，通過由多數之微透鏡5構成之微透鏡陣列照射於被照射體6。雷射光源1，例如，將波長為308nm或353nm之雷射光以例如50Hz之重複週期放射的準分子雷射。微透鏡陣列係為，將多數之微透鏡5配置於透明基板4之裝置，其將雷射光聚光於薄膜電晶體形成預定區域，該薄膜電晶體形成預定區域被設定於作為被照射體6之薄膜電晶體基板上。透明基板4與被照射體6平行配置；微透鏡5，係以電晶體形成預定區域之配列間距其2以上的整數倍(例如2)之間距配置。本實施態樣之被照射體6，例如，為薄膜電晶體，以雷射光照射其a-Si膜之通道區形成預定區域，形成多晶矽通道區。微透鏡5之上方，配置有藉由微透鏡5，使雷射光僅照射於通道形成預定區域之光罩3，藉此一光罩3，於被照射體6中劃定通道區。Hereinafter, the best mode for carrying out the invention will be specifically described with reference to the attached drawings. FIG. 1 is a view showing a laser irradiation apparatus using a microlens 5. In the laser irradiation apparatus shown in FIG. 1, in the step of manufacturing a semiconductor device such as a reverse-staggered thin film transistor, for example, only a predetermined region of the channel region is irradiated with laser light and annealed, so that the one channel region is formed. A device in which a region is polycrystallized to form a polycrystalline tantalum film. In the laser annealing apparatus using the microlens 5, the laser light emitted from the light source 1 is shaped into a parallel beam by the lens group 2, and is irradiated onto the object 6 by a microlens array composed of a plurality of microlenses 5. The laser light source 1 is, for example, a pseudo-molecular laser that emits laser light having a wavelength of 308 nm or 353 nm at a repetition period of, for example, 50 Hz. The microlens array is a device in which a plurality of microlenses 5 are disposed on a transparent substrate 4, and condenses laser light in a predetermined region where a thin film transistor is formed, which is set as the irradiated body 6. On a thin film transistor substrate. The transparent substrate 4 is disposed in parallel with the object to be irradiated 6; and the microlens 5 is disposed at an integral multiple (for example, 2) between two or more of the arrangement pitch of the predetermined area of the transistor. The irradiated body 6 of the present embodiment is, for example, a thin film transistor in which a channel region of the a-Si film is irradiated with laser light to form a predetermined region to form a polysilicon channel region. Above the microlens 5, a reticle 3 is formed by the microlens 5 so that the laser light is irradiated only to the channel forming predetermined region, whereby the reticle 3 defines the channel region in the irradiated body 6.
例如，形成畫素之驅動電晶體以作為液晶顯示裝置的周邊電路之情況，將玻璃基板上由Al等之金屬膜形成的閘電極，藉由濺鍍成形圖案。之後，以矽烷與H2 氣體為原料氣體，藉由250～300℃之低溫電漿CVD法，形成全面由SiN膜形成之閘極絕緣模。其後，於閘極絕緣模上，例如，藉電漿CVD法形成a-Si：H膜。此一a-Si：H膜係以矽烷與H2 氣體所混合之氣體作為原料氣體而成膜。使此一a-Si：H膜之閘電極上的區域作為通道形成預定區域，於各通道區配置1個的微透鏡5，僅對此一通道形成預定區域照射雷射光並退火，將此一通道形成預定區域多結晶化，形成多晶矽通道區。另外，微透鏡5並非為1列，而係配置為複數列，圖2至圖9之本實施態樣，配置設有3群之3列，共計9列之微透鏡。For example, in the case where a driving transistor for forming a pixel is used as a peripheral circuit of a liquid crystal display device, a gate electrode formed of a metal film of Al or the like on a glass substrate is patterned by sputtering. Thereafter, a gate insulating film formed entirely of a SiN film is formed by a low temperature plasma CVD method of 250 to 300 ° C using decane and H 2 gas as raw material gases. Thereafter, an a-Si:H film is formed on the gate insulating mold by, for example, plasma CVD. This a-Si:H film is formed by using a gas in which decane and H 2 gas are mixed as a material gas. A region on the gate electrode of the a-Si:H film is used as a channel to form a predetermined region, and one microlens 5 is disposed in each channel region, and only a predetermined region is irradiated with laser light and annealed. The channel forming region is polycrystallized to form a polysilicon channel region. Further, the microlenses 5 are not arranged in a single row, but are arranged in a plurality of columns. In the present embodiment of FIGS. 2 to 9, a microlens having three columns of three groups and nine columns in total is disposed.
圖2為顯示微透鏡5之配置、與雷射光之照射區域的平面圖。圖3至圖9，其等之上方圖，顯示藉微透鏡將雷射光聚光於非晶矽膜上之區域10(接受退火之區域)及微透鏡5之平面配置；其等之下方圖，顯示於玻璃基板上照射雷射光之前視圖。於微透鏡5之上方配置例如鋁製之光罩3，於光罩3之上方配置有將雷射光遮光之遮光板7。如圖2所示，微透鏡5係配置為，第1群11、第2群12及第3群13之各群3列共計9列。第1群11、第2群12、第3群13的各群之中，微透鏡5以一定的間距P配置。而第1群11與第2群12間的微透鏡相互之間、及第2群12與第3群13間的微透鏡相互之間，皆係以P+1/3P之間隔分隔。Fig. 2 is a plan view showing the arrangement of the microlenses 5 and the irradiation area of the laser light. 3 to FIG. 9 , and the upper view thereof shows a region 10 (a region subjected to annealing) and a plane configuration of the microlens 5 for concentrating laser light on the amorphous germanium film by a microlens; A view showing the front of the laser light on the glass substrate. A photomask 3 made of, for example, aluminum is placed above the microlens 5, and a light shielding plate 7 for shielding the laser light is disposed above the photomask 3. As shown in FIG. 2, the microlens 5 is arranged such that the first group 11, the second group 12, and the third group 13 have a total of nine columns and three columns. Among the groups of the first group 11, the second group 12, and the third group 13, the microlenses 5 are arranged at a constant pitch P. The microlenses between the first group 11 and the second group 12 and the microlenses between the second group 12 and the third group 13 are separated by P + 1/3P.
玻璃基板20上之全面形成有閘極層21，更於閘極層21上形成非晶矽層22。此外，圖3所示之初期階段，光罩3、微透鏡5及遮光板7較玻璃基板20其上方域配置得更近。A gate layer 21 is formed on the entire glass substrate 20, and an amorphous germanium layer 22 is formed on the gate layer 21. Further, in the initial stage shown in FIG. 3, the mask 3, the microlens 5, and the light shielding plate 7 are disposed closer to each other than the upper surface of the glass substrate 20.
之後，以固定遮光板7、光罩3及微透鏡5之狀態，使玻璃基板20往圖中右方移動。此一基板之移動態樣，係移動微透鏡的配列間距P之3倍的距離量後，照射雷射光，再將基板移動間距P之3倍的距離量後，又照射雷射光。Thereafter, the glass substrate 20 is moved to the right in the drawing in a state where the light shielding plate 7, the photomask 3, and the microlens 5 are fixed. The moving state of the substrate is such that the distance between the arrangement pitches P of the microlenses is three times, and then the laser light is irradiated, and then the substrate is moved by a distance of three times the pitch P, and then the laser light is irradiated.
其次，對藉如上述之構成的雷射照射裝置實施本實施態樣之雷射退火方法的場合其動作加以說明。此外，以下的動作係藉由控制驅動機構與雷射光之產生源之動作的控制裝置加以控制，該驅動機構係將含有光罩及微透鏡的雷射光之照射系統，與基板相對地在和該微透鏡之列垂直之方向移動。如圖3所示，光罩3，使其開口部與透明基板4上之各微透鏡5對應，與微透鏡5之位置關係保持於一定的狀態。遮光板7除了前端側的(基板20側的)3列分之微透鏡5其上方區域，覆於其他微透鏡5之上方，將雷射光遮光。Next, the operation of the laser irradiation apparatus of the present embodiment by the above-described laser irradiation apparatus will be described. Further, the following operation is controlled by a control device that controls the operation of the drive mechanism and the source of the laser light, and the drive mechanism is configured to face the substrate with the illumination system including the reticle and the microlens The columns of microlenses move in a vertical direction. As shown in FIG. 3, the mask 3 has its opening corresponding to each of the microlenses 5 on the transparent substrate 4, and the positional relationship with the microlens 5 is maintained in a constant state. The light shielding plate 7 covers the upper portion of the microlens 5 on the front end side (on the side of the substrate 20) over the other microlenses 5, and shields the laser light from light.
之後，如圖4所示，使玻璃基板20往圖中右方移動。如此，則玻璃基板20之位置，在移動間距P之3倍距離量的時點，進入微透鏡5及光罩3下方微透鏡5之3列分的寬度量。而於此一時點，照射1發雷射光30。如此，則非晶矽膜22中，由間距P之3列分的微透鏡5所聚光之區域10藉由雷射光加熱而升溫，並熔融凝固，使此一區域10結晶化。藉此，此一3列分之區域10成為多晶矽膜。3列分之微透鏡5以外的微透鏡5，藉遮光板7遮光不被雷射光照射。Thereafter, as shown in FIG. 4, the glass substrate 20 is moved to the right in the drawing. In this manner, the position of the glass substrate 20 enters the width of the three columns of the microlens 5 and the microlens 5 below the mask 3 at a time distance of three times the movement pitch P. At this point in time, one laser light 30 is illuminated. As described above, in the amorphous germanium film 22, the region 10 concentrated by the microlens 5 having three pitches P is heated by the laser light to be heated and solidified, and the region 10 is crystallized. Thereby, the region 10 of the three columns becomes a polycrystalline germanium film. The microlenses 5 other than the three-divided microlenses 5 are shielded from the laser light by the light shielding plate 7.
其次，如圖5所示，更使玻璃基板20移動，在移動間距P之3倍距離的時點，亦即，移動開始後，移動6P之距離量的時點，照射1發雷射光。如此，則在由第1群11之微透鏡5與第2群12之微透鏡5所聚光之區域10，實施雷射退火。藉此，追加於圖4之步驟中雷射光所照射的第1群11之區域10，圖5之步驟，在藉第1群與第2群之微透鏡5照射雷射光之區域10上，實施雷射退火。之後，因第1群與第2群，間隔P+1/3P之距離，故圖5之步驟一結束，則如圖5及圖2所示，玻璃基板20其前端部約3列分的部分(約3P之寬度的部分)中，藉第1次之照射的第1群之微透鏡5所形成的雷射退火區域10，與藉第2次照射的第2群之微透鏡5所形成的雷射退火區域10，錯開1/3P之距離。亦即，以間距P配列的區域10之中，僅有3列，對以第1發照射所形成之區域10形成有以1/3P鄰接之區域10。Next, as shown in FIG. 5, the glass substrate 20 is further moved, and one laser beam is irradiated at a time point when the distance P is three times the movement pitch, that is, after the start of the movement, when the distance of 6P is moved. In this manner, the laser annealing is performed in the region 10 where the microlenses 5 of the first group 11 and the microlenses 5 of the second group 12 are condensed. Thereby, the region 10 of the first group 11 irradiated by the laser light in the step of FIG. 4 is added, and the step of FIG. 5 is performed on the region 10 irradiated with the laser light by the microlenses 5 of the first group and the second group. Laser annealing. Thereafter, since the first group and the second group are separated by a distance of P + 1/3P, the step 1 of FIG. 5 is completed, and as shown in FIGS. 5 and 2, the front end portion of the glass substrate 20 is divided into three columns. (a portion having a width of about 3P), the laser annealing region 10 formed by the microlens 5 of the first group irradiated by the first time, and the microlens 5 of the second group irradiated by the second irradiation The laser annealing region 10 is offset by a distance of 1/3P. That is, there are only three columns among the regions 10 arranged at the pitch P, and a region 10 adjacent to 1/3P is formed in the region 10 formed by the first irradiation.
其次，如圖6所示，玻璃基板20於移動開始後移動9P距離之時點，施行第3次雷射光之照射。如此，則雷射光通過第1群11、第2群12及第3群13之微透鏡的全部微透鏡聚光於非晶矽膜22並照射之。藉此，玻璃基板20之前端部約3P寬度的部分中，第1次之第1群的雷射光照射、第2次之第2群的雷射光照射、與第3次之第3群的雷射光照射，每隔1/3P錯開照射，以1/3P之間距形成3列×3共計9列的雷射退火區域10。由玻璃基板20之前端開始，自距離約3P位置至距離約6P位置為止的3P分的部分中，依第2次之第1群的微透鏡之照射、與第3次之第2群的微透鏡之照射的結果，形成共計6列之雷射退火區域10。Next, as shown in FIG. 6, the glass substrate 20 is irradiated with the third laser light at the time of moving 9P distance after the start of movement. In this manner, the laser light is condensed on the amorphous germanium film 22 by the entire microlenses of the microlenses of the first group 11, the second group 12, and the third group 13 and is irradiated. Thereby, in the portion where the front end portion of the glass substrate 20 has a width of about 3P, the first group of the first group of laser light irradiation, the second time of the second group of the laser beam irradiation, and the third group of the third group of thunder Irradiation with the illuminating light is performed every 1/3P, and a laser annealing region 10 of three columns x 3 columns is formed at a distance of 1/3P. From the front end of the glass substrate 20, in the portion from the distance of about 3P to the distance of about 6P, the irradiation of the microlens of the first group and the second group of the third group are performed. As a result of the irradiation of the lens, a total of six columns of the laser annealing regions 10 are formed.
其次，如圖7所示，更於使玻璃基板20移動3P之距離量的時點，進一步照射1發雷射光。如此，則玻璃基板20自微透鏡5與光罩3之下方部分，往前方進入約3P寬度量，此一去除約3P部分的非晶矽膜22之部分，接受雷射光的照射。此一步驟中，雷射光亦由第1群11、第2群12及第3群13之全部的微透鏡5，被聚光於非晶矽膜22上，使各區域10接受雷射退火。藉此，對 玻璃基板20之自前端起約6P寬度的部分，18列之雷射退火區域10以1/3P之間距並排；進一步，對再3P距離之後方的部分，6列的區域10以1/3P之間距與2/3P之間距並排；進一步，約再3P距離之更後方的部分，3列的區域10以P之間距並排。Next, as shown in FIG. 7, one laser light is further irradiated at a time when the glass substrate 20 is moved by a distance of 3P. In this manner, the glass substrate 20 enters a width of about 3P from the lower portion of the microlens 5 and the mask 3, and the portion of the amorphous germanium film 22 of about 3P portion is removed, and the laser light is irradiated. In this step, the laser light is also condensed on the amorphous germanium film 22 by the microlenses 5 of all of the first group 11, the second group 12, and the third group 13, and the respective regions 10 are subjected to laser annealing. Take this The glass substrate 20 has a width of about 6P from the front end, and the laser annealing regions 10 of 18 columns are arranged side by side at a distance of 1/3P; further, for the portion after the distance of the 3P, the region 10 of the six columns is 1/3P. The pitch is side by side with 2/3P; further, about 3P further, the 3 rows of regions 10 are arranged side by side with P.
其後，同樣地，於玻璃基板20移動3P距離的時點，發射1發雷射光，使用自第1群11至第3群13為止全部的微透鏡5，重複雷射退火。藉此，如圖8與圖9所示，以1/3P之間距並排的雷射退火區域10之區域將被擴大。Then, similarly, when the glass substrate 20 is moved by a distance of 3 P, one laser beam is emitted, and all the microlenses 5 from the first group 11 to the third group 13 are used, and the laser annealing is repeated. Thereby, as shown in FIGS. 8 and 9, the area of the laser annealing region 10 which is arranged side by side at a distance of 1/3P will be enlarged.
最後，玻璃基板之後端部中，微透鏡5與光罩3之前端側的部分，以每次3列方式，藉由以其他遮光板將雷射光遮光，停止雷射光的照射。圖中，來自最左側3列之微透鏡5的雷射光停止照射後，使來自次3列之微透鏡5的雷射光停止照射，其後，使玻璃基板20移動3P距離，施行最後的雷射光照射，則非晶矽膜之全部區域完成雷射退火。Finally, in the rear end portion of the glass substrate, the portion of the microlens 5 and the front end side of the photomask 3 is shielded from the laser light by the other light shielding plate in a three-column manner, thereby stopping the irradiation of the laser light. In the figure, after the laser light from the microlenses 5 of the leftmost three rows is stopped, the laser light from the microlenses 5 of the third row is stopped, and then the glass substrate 20 is moved by 3P to perform the final laser light. Upon irradiation, the entire area of the amorphous germanium film is subjected to laser annealing.
如以上，不拘於微透鏡5之配列間距是否為P，於玻璃基板20上，形成配列間距為1/3P之多晶矽區域10。藉此，可由較微透鏡5之配列間距更微細之間距形成多晶矽之微細區域。此外，將屬於各群之間距，適當設為同一之微透鏡的列之數目，藉由使各群間的間隔為(P+P/n)，可將雷射退火區域10，即，微細多晶矽區域10之形成間距，不拘於微透鏡5之間距設定為任意(P/n)。As described above, regardless of whether or not the arrangement pitch of the microlenses 5 is P, a polysilicon region 10 having a pitch of 1/3P is formed on the glass substrate 20. Thereby, the fine areas of the polycrystalline germanium can be formed by the finer pitch of the arrangement of the microlenses 5. Further, the number of columns belonging to the same microlens as the distance between the groups is appropriately set, and by making the interval between the groups (P + P / n), the laser annealing region 10, that is, the fine polycrystalline silicon can be used. The formation pitch of the regions 10 is set to be arbitrary (P/n) regardless of the distance between the microlenses 5.
[產業上利用性][Industrial use]
依本發明，因可由較微透鏡陣列之配列間距，形成更細小之間距的微小雷射退火區域，故使半導體裝置之微小化為可能，並使微透鏡陣列之製造更加容易，極為有用。According to the present invention, since the fine laser annealing regions having a finer pitch can be formed by the arrangement pitch of the microlens arrays, it is extremely useful to make the semiconductor device finer and to facilitate the manufacture of the microlens array.
1‧‧‧雷射光源1‧‧‧Laser light source
2‧‧‧透鏡群2‧‧‧Lens group
3‧‧‧光罩3‧‧‧Photomask
4‧‧‧透明基板4‧‧‧Transparent substrate
5‧‧‧微透鏡5‧‧‧Microlens
6‧‧‧被照射體6‧‧‧ irradiated body
7‧‧‧遮光板7‧‧ ‧ visor
10‧‧‧區域10‧‧‧ area
11‧‧‧第1群(之微透鏡)11‧‧‧Group 1 (microlenses)
12‧‧‧第2群(之微透鏡)12‧‧‧Group 2 (microlenses)
13‧‧‧第3群(之微透鏡)13‧‧‧Group 3 (microlenses)
20‧‧‧玻璃基板20‧‧‧ glass substrate
21‧‧‧閘極層21‧‧ ‧ gate layer
22‧‧‧非晶矽膜22‧‧‧Amorphous film
30‧‧‧雷射光30‧‧‧Laser light
P‧‧‧間距P‧‧‧ spacing
圖1係顯示雷射照射裝置之圖。Figure 1 is a diagram showing a laser irradiation device.
圖2係顯示雷射照射區域之推移的示意圖。Fig. 2 is a schematic view showing the transition of the laser irradiation region.
圖3上方圖係顯示藉微透鏡於非晶矽膜上聚光雷射光之區域10(接受退火之區域)與微透鏡5之平面配置；下方圖為顯示玻璃基 板上照射之雷射光的前視圖。The top view of Fig. 3 shows the planar arrangement of the region 10 (the region subjected to annealing) and the microlens 5 for collecting the laser light on the amorphous germanium film by the microlens; the lower view shows the glass base. Front view of the laser light illuminated on the board.
圖4係顯示圖3之下一步驟的圖。Figure 4 is a diagram showing a step below the figure of Figure 3.
圖5係顯示圖4之下一步驟的圖。Figure 5 is a diagram showing a step below in Figure 4.
圖6係顯示圖5之下一步驟的圖。Figure 6 is a diagram showing a step below in Figure 5.
圖7係顯示圖6之下一步驟的圖。Figure 7 is a diagram showing a step below in Figure 6.
圖8係顯示圖7之下一步驟的圖。Figure 8 is a diagram showing a step below in Figure 7.
圖9係顯示圖8之下一步驟的圖。Figure 9 is a diagram showing a step in the lower portion of Figure 8.
3．．．光罩3. . . Mask
5．．．微透鏡5. . . Microlens
7．．．遮光板7. . . Shading
10．．．區域10. . . region
11．．．第1群(之微透鏡)11. . . Group 1 (microlens)
12．．．第2群(之微透鏡)12. . . Group 2 (microlens)
13．．．第3群(之微透鏡)13. . . Group 3 (microlens)
20．．．玻璃基板20. . . glass substrate
21．．．閘極層twenty one. . . Gate layer
22．．．非晶矽膜twenty two. . . Amorphous germanium film
30．．．雷射光30. . . laser
Claims (3)
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| JP2010100298A JP5495043B2 (en) | 2010-04-23 | 2010-04-23 | Laser annealing method, apparatus, and microlens array |
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| WO2018061126A1 (en) * | 2016-09-28 | 2018-04-05 | 堺ディスプレイプロダクト株式会社 | Laser annealing device and laser annealing method |
| US11004682B2 (en) * | 2016-12-15 | 2021-05-11 | Sakai Display Products Corporation | Laser annealing apparatus, laser annealing method, and mask |
| WO2018138783A1 (en) * | 2017-01-24 | 2018-08-02 | 堺ディスプレイプロダクト株式会社 | Laser annealing device, laser annealing method, and mask |
| US11081507B2 (en) | 2017-07-12 | 2021-08-03 | Sakai Display Products Corporation | Semiconductor device and method for manufacturing same |
| WO2019012631A1 (en) | 2017-07-12 | 2019-01-17 | 堺ディスプレイプロダクト株式会社 | Semiconductor device, and manufacturing method for manufacturing same |
| WO2019102548A1 (en) * | 2017-11-22 | 2019-05-31 | 堺ディスプレイプロダクト株式会社 | Laser annealing method, laser annealing apparatus, and method for manufacturing active matrix substrate |
| CN108227376A (en) * | 2018-01-03 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of preparation method of micro-structure, impression formboard, display base plate |
| US20200402823A1 (en) * | 2018-03-07 | 2020-12-24 | Sakai Display Products Corporation | Laser annealing device, laser annealing method, and active matrix substrate production method |
| CN112236843A (en) * | 2018-06-06 | 2021-01-15 | 堺显示器制品株式会社 | Laser annealing method, laser annealing apparatus, and method for manufacturing active matrix substrate |
| JP2020004860A (en) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | Thin-film transistor, display, and method for manufacturing thin-film transistor |
| JP2020004861A (en) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | Thin-film transistor, display, and method for manufacturing thin-film transistor |
| JP2020004859A (en) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | Thin-film transistor, display, and method for manufacturing thin-film transistor |
| WO2020031309A1 (en) | 2018-08-08 | 2020-02-13 | 堺ディスプレイプロダクト株式会社 | Thin-film transistor and method for producing same |
| CN112916873B (en) * | 2021-01-26 | 2022-01-28 | 上海交通大学 | Micro-droplet three-dimensional printing system and method based on pulse laser driving |
| CN114799225B (en) * | 2022-05-05 | 2023-05-23 | 上海交通大学 | Pulse laser driven metal droplet printing system and adjusting method |
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| TW201143949A (en) | 2011-12-16 |
| JP2011233597A (en) | 2011-11-17 |
| KR20130065661A (en) | 2013-06-19 |
| KR101773219B1 (en) | 2017-08-31 |
| CN102844839A (en) | 2012-12-26 |
| CN102844839B (en) | 2015-08-26 |
| WO2011132559A1 (en) | 2011-10-27 |
| JP5495043B2 (en) | 2014-05-21 |
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